Fe掺杂量对双层复合结构BaTi1-zFezO3+δ-Tb1-xDyxFe2-y中磁电耦合的影响

采用溶胶凝胶方法制备了Fe掺杂钛酸钡多晶系列陶瓷BaTi_1-zFe_zO_3+δ(0.005≤z≤0.02) (BTFO).X射线衍射实验显示,所制备的BTFO的结构仍然为四方相钙钛矿.差热分析表明,该BTFO样品的铁电-顺电转变温度及相变潜热随掺杂量z的增加而下降.将该BTFO极化后与Tb_1-xDy_xF 关键词： 磁电耦合 掺杂效应 掺杂钛酸钡     

n-ZnO:Al/i-ZnO/n-CdS/p-Cu2ZnSnS4太阳能电池光伏特性的分析

具有高光吸收系数的半导体Cu₂ZnSnS₄ (CZTS)薄膜是一种新型太阳能电池材料. 本文对n-ZnO:Al/i-ZnO/n-CdS/p-CZTS结构的CZTS薄膜太阳能电池进行分析, 讨论CZTS薄膜的掺杂浓度、厚度、缺陷态和CdS薄膜的掺杂浓度、 厚度对太阳能电池转换效率的影响以及太阳能电池的温度特性. 分析表明, CZTS薄膜作为太阳能电池的主要光吸收层, CZTS薄膜的掺杂浓度和厚度的取值对太阳能电池的转换效率有显著影响, CZTS薄膜结构缺陷态的存在会导致太阳能电池性能的下降. CdS缓冲层的掺杂浓度、厚度对太阳能电池光伏特性的影响较小. 经结构参数优化得到的n-ZnO:Al/i-ZnO/n-CdS/p-CZTS薄膜太阳能电池的最佳光 伏特性为开路电压1.127 V、短路电流密度27.39 mA/cm²、填充因子87.5%、 转换效率27.02%,转换效率温度系数为-0.14%/K.     

硼(氮、氟)掺杂对TiO2纳米颗粒光学性能的影响

利用X射线衍射谱、拉曼光谱和紫外-可见光吸收光谱研究了硼(氮、氟)掺杂对TiO₂纳米颗粒光学性能的影响.X射线衍射谱和拉曼光谱结果表明,掺硼(氮、氟)对TiO₂纳米颗粒的锐钛矿相晶体结构无明显影响,而其锐钛矿晶格出现畸变(c/a值增大),这被归因于掺杂原子对TiO₂纳米颗粒表面氧原子缺位沿晶格c轴方向的占据.另外,掺硼(氮、氟)TiO₂纳米颗粒吸收带红移与TiO相似文献   

TiO2/ZnO纳米薄膜界面热导率的分子动力学模拟

采用平衡分子动力学方法及Buckingham势研究了金红石型TiO₂薄膜与闪锌矿型ZnO薄膜构筑的纳米薄膜界面沿晶面[0001](z轴方向)的热导率.通过优化分子模拟初始条件中的截断半径r_c和时间步后,计算并分析了平衡温度、薄膜厚度、薄膜截面大小对热导率的影响.研究表明,薄膜热导率受薄膜温度和厚度的影响很大,当温度由300 K升高600 K时,薄膜的热导率逐渐减小;当薄膜厚度由1.8 nm增大到5 nm时,热导率会逐渐增大;并在此基础 关键词： 热导率 分子动力学 2/ZnO纳米薄膜界面')" href="#">TiO₂/ZnO纳米薄膜界面 数值模拟     

Pulsed laser deposition and thermal characterization of Ni-doped La5Ca9Cu24O41 thin films

Highly b-axis oriented polycrystalline Ni-doped La₅Ca₉Cu₂₄O₄₁ thin films have been grown on (0 0 1) SrTiO₃ substrates using the pulsed laser deposition technique. EDX measurements have revealed nearly stoichiometric target-to-film transfer of Ni concentration up to 6.6 at.%. The 3ω method has been employed to carry out thermal conductivity measurements in the range 90-300 K. The results indicate that the out-of-plane thermal conductivity (κ_b) decreases with increasing Ni doping level. The temperature dependence of κ_b observed in pristine and Ni-doped films is similar to that observed in polycrystalline pellets indicating that the grain boundaries play a significant role in the heat transport.     

Thermal expansion and ultrasonic attenuation anomalies in antiferromagnetic dysprosium and terbium-50% holmium

Anomalies in the c-axis thermal expansion of single crystal Dy and Tb-50% Ho have been observed at 113.0 ±1.0 K and 121.5 ±1.0 K respectively. In dysprosium this is accompanied by an anomalous increase in the attenuation coefficient, α₄₄, of 15 MHz ultrasonic shear waves propagated along the c-axis. In both materials the anomaly occurs when the helical turn angle, as measured by neutron diffraction, assumes a values of 30°. The observations are compared with a similar effect in holmium and discussed in terms of a model involving helical spin domains which may be commensurate, or otherwise, with the crystal lattice.     

Application of obliquely interfering TE10 modes for electron energy gain

Two fundamental TE₁₀ modes are considered to interfere at a small angle θ and then propagate along the z-axis in an evacuated rectangular waveguide. The electron trajectory in the resultant field and the expressions for energy gain and the acceleration gradient are obtained, when the electron is injected along the z-axis. A 50 keV electron gains 718 keV energy in a 4.0 cm × 2.5 cm waveguide, when the microwave with intensity of 1 × 10¹⁰ W/cm² and frequency 5.577 GHz is used and the modes superpose at an angle of 10°; here the maximum acceleration gradient is obtained as 251 MeV/m. The energy gain and acceleration gradient are decreased with increasing width of the waveguide and microwave frequency. Higher gradient and larger energy gain are obtained for the higher microwave intensity, smaller angle of superposition and also when the electron is injected with larger initial energy.     

Theoretical investigation on thermal lensing effects of Yb:KY(WO4)2 in diode-pumped lasers

Based on the features of laser diode end-pumped lasers, a thermal model of Yb:KY(WO₄)₂(Yb:KYW) with square cross-section was established. Considering the heat transfer on side faces, the anisotropic of thermal conductivity and the latest reports about thermo-optic coefficient, thermal expansion coefficient and thermal conductivity, temperature distribution, end-pumped face distortion and thermal lens focal length of Yb:KYW were more precisely obtained using finite difference method to solve Poisson equation in a rectangular Cartesian coordinate for the first time. At the pump power of 14 W, the highest temperature located at the center of end-pumped face was 243.8 °C, the highest distortion was 0.28 μm, and the thermal lens focal length was 5.4 cm along z-axis and −4.9 cm along x-axis. The results show that thermal lensing effects in the b-cut Yb:KYW were mainly determined by the anisotropic thermal expansion of Yb:KYW, and further present thermal lensing effects become weaker after considering the heat transfer. This work is significant for compensating the thermal lensing effect and improving the resonator stability of diode-pumped anisotropy crystal lasers.     

Growth of b-axis oriented VO2 thin films on glass substrates using ZnO buffer layer

VO₂ thin films are grown on glass substrates by pulsed laser deposition using vanadium metal as a target. In this study, a ZnO thin film was used as a buffer layer for the growth of VO₂ thin films on glass substrates. X-ray diffraction studies showed that the VO₂ thin film had b-axis preferential orientation on a c-axis oriented ZnO buffer layer. The thickness of the ZnO buffer layer and the oxygen pressure during VO₂ deposition were optimized to grow highly b-axis oriented VO₂ thin films. The metal-insulator transition properties of the VO₂ film samples were investigated in terms of infrared reflectance and electrical resistance with varying temperatures.     

Electronic structure and surface structure of Cu2S nanorods from polarization dependent X-ray absorption spectroscopy

Highly aligned Cu₂S nanorods have been studied by polarization dependent X-ray absorption spectroscopy. In contrast to bulk Cu₂S, strong s, p, and d hybridization is found in the nanorods. The polarization dependence shows a predominant d_z2${\text{d}}_{z^2}$ character of Cu 3d states. Ab initio multiple-scattering calculations confirm the strong hybridization, and reveal that Cu₂S nanorods are grown along the z-axis of chalcocite structure with Cu₇ and Cu₁₀ sites being the main building blocks. The hybridized absorption peak in the nanorods is shifted towards lower energies for smaller diameter of nanorods, which is attributed to surface reconstruction due to strong Cu–Cu interactions on the Cu-rich surface of the nanorods.     

Effect of nitrogen content on the properties of CrNxOyCz coating prepared by DC reactive magnetron sputtering

The CrN_xO_yC_z coatings were deposited by planar DC reactive magnetron sputtering onto AZ31 Mg alloy and high speed tool steel (HSTS) substrates at a substrate temperature of 200 °C. The effect of N₂ content on composition and structure of the CrN_xO_yC_z coatings was investigated. The structure of the CrN_xO_yC_z coatings was analyzed by a glancing angle X-ray diffraction (GXRD). The cross-section morphology and thickness of the CrN_xO_yC_z coatings were checked by a field emission scanning electron microscope (FESEM), and the composition profile and chemical state were carried out by an X-ray photoelectron spectroscopy (XPS). The experimental results showed that the structure and phase composition of the CrN_xO_yC_z coatings depended on N₂ content. The evolution of the structure of CrN_xO_yC_z coatings was consistent with CrN_x-based coatings, and the CrN_xO_yC_z coatings contained Cr₂O₃, CrO₂, CrO, Cr₃C₂, CrN_x (Cr, CrN, Cr₂N), as well as different chromium oxynitride. However, the carbide and oxynitride were oxidized after annealing.     

Methods of measuring the nonlinear-optical coefficients of the refractive index of nonlinear media

A cousistent analysis of a method of measuring the coefficient n ₂ of the Kerr nonlinearity and the two-photon absorption coefficient in presented. The method is based on the study of the dependence of the nonlinear transmittance with respect to the far-field axial intensity of the laser beam on the position of the layer of the nonlinear medium on the z (longitudinal) coordinate of this beam (z scanning). The possibility for the measurement of n ₂ and the two-photon (multiphoton) absorption coefficient based on the study of the far-field variations in the spatial profile of the beam having passed through the nonlinear medium is also analyzed. The calculations prove the efficiency of the new method for measuring n ₂ and the two-photon (multiphoton) absorption coefficient.     

A neutron powder diffraction study of the helimagnetic structure of TlCo2Se2−xSx

The magnetic layer structure of TlCo₂Se_2−xS_x has been thoroughly re-investigated with neutron powder diffraction. The cobalt magnetic moments are ferromagnetically arranged within the layers, but the interlayer coupling differs profoundly with varying composition (x): the spins in TlCo₂Se₂ form a helix along the c-axis with a turning-angle of ∼119° at 1.4 K. This kind of helical structure prevails for 0≤x≤1.5 with a gradual decrease of the angle with increasing sulphur content, down to 34°, showing an almost linear relationship with the interlayer distance of Co-Co. For x≥1.75 the interlayer coupling changes to ferromagnetic. Unexpectedly, two helices were found to coexist at x=0.5 and x=1.0. The interaction between adjacent cobalt layers is there characterized by an incommensurate angle (106°, resp., 73°) together with a commensurate angle of 90°. The magnetic structures have been refined as two magnetic phases, each having a characteristic wave vector. A tentative model where the symmetry of the structure and the interlayer distance compete is considered for explaining the simultaneous occurrence of the two kinds of diffraction profile satellites.     

Mesoscopic spin-flip transport through a hybrid system with a single molecular dot system applied with ac magnetic fields

We have investigated the current for the system of vibrating quantum dot irradiated with a rotating magnetic field and an oscillating magnetic field by nonequilibrium Green's function. The rotating magnetic field rotates with the angular frequency ωr around the z-axis with the tilt angle ?, and the time-oscillating magnetic field is located in the z-axis with the angular frequency ω. Different behaviors have been shown in the presence of electron-phonon interaction (EPI) which plays a significant role in the transport. The current displays asymmetric behavior as the source-drain bias eV=0, novel side peaks or shoulders can be found due to the phonon absorption and emission procedure, and the negative differential resistance becomes stronger as the parameter g increases. Furthermore, the strong EPI also destroys the quasiperiodic oscillations of current in the region μ₀B₁>2.5Δ. The electron transport properties are also significantly influenced by the linewidth function Γ.     

Effect of Ca doping level on the laser-induced voltages in tilted La1−x Ca x MnO3 (0.1 ≤ x ≤ 0.7) thin films

Tilted La_1?x Ca _x MnO₃ (0.1 ≤ x ≤ 0.7) thin films have been grown on vicinal cut LaAlO₃ (100) substrate by pulsed laser deposition. The laser-induced voltage effect was studied at room temperature with the KrF excimer laser using as the thermal source. The relationships between Ca doping level and voltage signal, response time and anisotropy Seebeck coefficient were established. The voltage signal and anisotropy Seebeck coefficient increase at first with increasing Ca doping level, reach a maximum at the same Ca content around x = 0.5, and then decrease. The respond time decreases with the Ca concentration increasing, and changes very little after x = 0.5. The figure of merit F _m was also the largest at this doping level, indicating a potential good performance of the photodetector devices. The variation of intrinsic structural and transport anisotropy induced by the change of Ca concentration has been proposed to account for the different LIV effects observed in LCMO thin films.     

Influence of the thickness on structural,magnetic and electrical properties of La0.7Ca0.3MnO3 thin film

We have studied the effect of thickness on the structural, magnetic and electrical properties of La_0.7Ca_0.3MnO₃ thin films prepared by pulsed laser deposition method using X-ray diffraction, electrical transport, magneto-transport and dc magnetization. X-ray diffraction pattern reflects that all films have c-axis epitaxial growth on LaAlO₃ substrate. The decrease in out-of-plane cell parameter specifies a progressive relaxation of in the plane compressive strain as the film thickness is increases. From the dc magnetization measurements, it is observed that ferromagnetic to paramagnetic transition temperature increases with increase in the film thickness. Magneto-resistance and temperature coefficient of resistance increases with film thickness and have maximum value near its metal to insulator transition temperature.     

Fastscan z-scan system for determining optical non-linearities in semiconductors

Traditional z-scan techniques have been used to determine the non-linear optical coefficients of semiconductors. This is usually carried out by scanning a sample along the optical z-axis using a manual or computer-controlled linear translation stage. We report upon a novel z-scan method involving a fastscanning sampleholder: This gives real-time z-scan traces and greatly improves experimental efficiency and applicability. The technique is used here to study the two-photon absorption coefficient of ZnSe.     

Superconducting coherent quasiparticle weight in high-Tc superconductor from angle-resolved photoemission

We study the doping and temperature dependence of the single-particle coherent weight, z_A, for high-T_c superconductors Bi₂Sr₂CaCu₂O_8+x using angle-resolved photoemission. We find that at low temperatures the coherent weight z_A at (π,0) is proportional to the carrier concentration x and that the temperature-dependence of z_A is similar to that of the c-axis superfluid density. We show that, for a wide range of carrier concentration, the superconducting transition temperature scales with the product of the low-temperature coherent weight and the maximum superconducting gap.     

Optical, electrical and morphological properties of p-type Mn-doped SnO2 nanostructured thin films prepared by sol–gel process

SnO₂ thin films doped with various manganese concentrations were prepared on glass substrates by sol–gel dip coating method. The decomposition procedure of compounds produced by alcoholysis reactions of tin and manganese chlorides was studied by thermogravimetric analysis (TGA). The effects of Mn doping on structural, morphological, electrical and optical properties of prepared films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), Hall effect measurement, Fourier Transform Infrared (FTIR) spectral analysis, UV–Vis spectrophotometry, and photoluminescence (PL) spectroscopy. The results of the X-ray diffraction show that the samples are crystalline with a tetragonal rutile structure and the grain size decreases with increasing the doping concentration. The SEM and AFM images demonstrate that the surface morphology of the films was affected from the manganese incorporation. The Sn_1?x Mn _x O₂ thin films exhibited electrically p-type behavior in doping level above x=0.035 and electrical resistivity increases with increase in Mn doping. The optical transmission spectra show a shift in the position of absorption edge towards higher wavelength (lower energy). The optical constants (refractive index and extinction coefficient) and the film thickness were determined by spectral transmittance and using a numerical approximation method. The oscillator and dispersion energies were calculated using the Wemple–DiDomenico dispersion model. The estimated optical band gap is found to decrease with higher manganese doping. The room-temperature PL measurements illustrate the decrease in intensity of the emission lines when content of Mn is increased in Mn-doped SnO₂ thin films.     

Effect of Mg doping on the electrical properties of SnO2 nanoparticles

Sol-gel derived Mg doped tin oxide (Sn_1−xMg_xO₂) nanocrystals were synthesized with x ranging between 0.5 and 7 at. %. Characteristic single phase tetragonal structure of pure and doped samples was obtained and doping saturation was inferred by X-ray diffraction analysis. Structural, morphological and phase informations were obtained by high resolution transmission electron microscope, field emission scanning electron microscope and X-ray photoelectron spectroscopy respectively whereas bonding information was obtained from Fourier transformed infrared spectroscopy. Measurement of different electrical parameters with frequency (200 Hz-10⁵ Hz) has been carried out at room temperature. Ultrahigh dielectric constant and metallic AC conductivity were observed for undoped tin oxide and the profiles reflected highly sensitive changes in the atomic and interfacial polarizability generated by doping concentrations. Relaxation spectra of tangent loss of any sample did not show any loss peak within the frequency range. Both the grain and grain boundary contributions are observed to increase as the doping concentration increased. Results of first principle calculation based on density functional theory indicated effective Fermi level (E_F) suppression due to Mg doping which is responsible for the experimentally observed conductivity variation. AC conductivity was found to depend strongly on the doping concentration and the defect chemistry of the compound. Mg doped SnO₂ may find applications as a low loss dielectric and high density energy storage material.