Insights into the photocatalytic mechanism of the C4N/MoS2 heterostructure: A first-principle study

Constructing heterostructures by combining COFs and TMD is a new strategy to design efficient photocatalysts for CO₂ reduction reaction (CO₂RR) due to their good stability, tunable band gaps and efficient charge separation. Based on the synthesis of completely novel C₄N−COF in our previous reported work, a new C₄N/MoS₂ heterostructure was constructed and then the related structural, electronic and optical properties were also studied using first principle calculations. The interlayer coupling effect and charge transfer between the C₄N and MoS₂ layer are systematically illuminated. The reduced band gap of the C₄N/MoS₂ heterostructure is beneficial to absorb more visible light. For the formation of type-II band alignment, a built-in electric field appears which separates the photogenerated electrons and holes into different layers efficiently and produces redox active sites. The band alignment of the heterostructure ensures its photocatalytic activities of the whole CO₂ reduction reaction. Furthermore, the charge density difference and charge carrier mobility confirm the existence of the built-in electric field at the interface of the C₄N/MoS₂ heterostructure directly. Finally, the high optical absorption indicates it is an efficient visible light harvesting photocatalyst. Therefore, this work could provide strong insights into the internal mechanism and high photocatalytic activity of the C₄N/MoS₂ heterostructure and offer guiding of designing and synthesizing COF/TMD heterostructure photocatalysts.     

Hydrogen-induced Sulfur Vacancies on the MoS2 Basal Plane Studied by Ambient Pressure XPS and DFT Calculations

Sulfur vacancy on an MoS₂ basal plane plays a crucial role in device performance and catalytic activity; thus, an understanding of the electronic states of sulfur vacancies is still an important issue. We investigate the electronic states on an MoS₂ basal plane by ambient-pressure X-ray photoelectron spectroscopy (AP-XPS) and density functional theory calculations while heating the system in hydrogen. The AP-XPS results show a decrease in the intensity ratio of S 2p to Mo 3d, indicating that sulfur vacancies are formed. Furthermore, low-energy components are observed in Mo 3d and S 2p spectra. To understand the changes in the electronic states induced by sulfur vacancy formation at the atomic scale, we calculate the core-level binding energies for the model vacancy surfaces. The calculated shifts for Mo 3d and S 2p with the formation of sulfur vacancy are consistent with the experimentally observed binding energy shifts. Mulliken charge analysis indicates that this is caused by an increase in the electronic density associated with the Mo and S atoms around the sulfur vacancy as compared to the pristine surface. The present investigation provides a guideline for sulfur vacancy engineering.     

The Influence of Defects on Mo‐Doped TiO2 by First‐Principles Studies

TiO₂ doped with transition metals shows improved photocatalytic efficiency. Herein the electronic and optical properties of Mo‐doped TiO₂ with defects are investigated by DFT calculations. For both rutile and anatase phases of TiO₂, the bandgap decreases continuously with increasing Mo doping level. The 4d electrons of Mo introduce localized states into the forbidden band of TiO₂, and this shifts the absorption edge into the visible‐light region and enhances the photocatalytic activity. Since defects are universally distributed in TiO₂ or doped TiO₂, the effect of oxygen deficiency due to oxygen vacancies or interstitial Mo atoms is systemically studied. Oxygen vacancies associated with the Mo dopant atoms or interstitial Mo will reduce the spin polarization and magnetic moment of Mo‐doped TiO₂. Moreover, oxygen deficiency has a negative impact on the improved photocatalytic activity of Mo‐doped TiO₂. The current results indicate that substitutional Mo, interstitial Mo, and oxygen vacancy have different impacts on the electronic/optical properties of TiO₂ and are suited to different applications.     

All-oxide-based and metallic electrode-free artificial synapses for transparent neuromorphic computing

The extraordinary abilities of the human brain rely on the functioning of biological synapses in the nervous system. Emulating human brain activity for neuromorphic computing has been an alluring prospect in artificial intelligence, and this would become possible with the development of an efficient artificial synapse. The human brain assimilates most information through visual perception. Therefore, optoelectronic synapses can be considered an important keystone of neuromorphic computing due to their efficient ability to process optoelectronic input signals. In this work, a metallic electrode-free, all-oxide-based optoelectronic synapse was developed that demonstrated efficient and repeatable electronic and photonic synaptic plasticity behaviour. A unique artificial synapse with an n–n heterostructure was developed using ZnO and V₂O₅. This artificial synapse structure has high optical transparency and does not require a metallic electrode for data acquisition. The device exhibits resistive switching memory behaviour, along with electronic and photonic synaptic behaviour. The storing and erasing of information, as well as learning-experience behaviour, was also successfully demonstrated in the V₂O₅/ZnO artificial synapse. This work could therefore be beneficial to the development of artificial intelligence when transparent and metallic electrode-free synaptic devices are considered necessary.     

Defect Engineering of Two-Dimensional Molybdenum Disulfide

Two-dimensional (2D) molybdenum disulfide (MoS₂) holds great promise in electronic and optoelectronic applications owing to its unique structure and intriguing properties. The intrinsic defects such as sulfur vacancies (SVs) of MoS₂ nanosheets are found to be detrimental to the device efficiency. To mitigate this problem, functionalization of 2D MoS₂ using thiols has emerged as one of the key strategies for engineering defects. Herein, we demonstrate an approach to controllably engineer the SVs of chemically exfoliated MoS₂ nanosheets using a series of substituted thiophenols in solution. The degree of functionalization can be tuned by varying the electron-withdrawing strength of substituents in thiophenols. We find that the intensity of 2LA(M) peak normalized to A_1g peak strongly correlates to the degree of functionalization. Our results provide a spectroscopic indicator to monitor and quantify the defect engineering process. This method of MoS₂ defect functionalization in solution also benefits the further exploration of defect-free MoS₂ for a wide range of applications.     

Effects of Single Vacancy on Electronic and Optical Properties for γ-Si3N4

The energetics, electronic structures, and optical properties of several neutral vacancies for γ-Si₃N₄ are studied based on density function theory within the generalized gradient approximation. The binding and formation energies of nitrogen vacancy are smaller than that of silicon vacancies, implying that nitrogen vacancy can be easily formed in γ-Si₃N₄.Corresponding density of states of different point vacancies is analyzed. We concluded that the neutral silicon vacancies introduce the p-type carriers into the system, whereas single nitrogen vacancy leads to an n-type semiconductor. The results show indirect semiconductor of nitrogen vacancy for γ-Si₃N₄. The effects of optical properties are discussed on single vacancies for γ-Si₃N₄. For silicon vacancies, the materials have much higher static dielectric constants than these of nitrogen vacancy and perfect γ-Si₃N₄. The single nitrogen vacancy for γ-Si₃N₄ has no effects on absorption and reflection in visible and infrared light. For silicon vacancy, it is significantly increased.     

Activation of MoS2 Basal Planes for Hydrogen Evolution by Zinc

Molybdenum disulfide (MoS₂) has been widely studied as a potential earth‐abundant electrocatalyst for the hydrogen‐evolution reaction (HER). Defect engineering and heteroelemental doping are effective methods to enhance the catalytic activity in the HER, so exploring an efficient route to simultaneously achieve in‐plane vacancy engineering and elemental doping of MoS₂ is necessary. In this study, Zinc, a low‐cost and moderately active metal, has been used to realize this strategy by generation of sulfur vacancies and zinc doping on MoS₂ in one step. Density functional theory calculations reveal that the zinc atoms not only lower the formation energy of S vacancies, but also help to decrease ΔG_H of S‐vacancy sites near the Zn atoms. At an optimal zinc‐reduced MoS₂ (Zn@MoS₂) example, the activated basal planes contribute to the HER activity with an overpotential of ?194 mV at 10 mA cm^?2 and a low Tafel slope of 78 mV/dec.     

类石墨烯二硫化钼及其在光电子器件上的应用

由单层或几层二硫化钼构成的类石墨烯二硫化钼(graphene-like MoS₂)是一种具有类似石墨烯结构和性能的新型二维(2D)层状化合物, 近年来以其独特的物理、化学性质而成为新兴的研究热点. 本文综述了近年来类石墨烯二硫化钼常见的几种制备方法, 包括以微机械力剥离、锂离子插层和液相超声法等为主的“自上而下”的剥离法, 以及以高温热分解、水热法等为主的“自下而上”的合成法; 介绍了其常用的结构表征方法, 包括原子力显微镜(AFM)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)和拉曼光谱等; 概述了类石墨烯二硫化钼的紫外-可见(UV-Vis)吸收、荧光发射等基本光物理性质及其相关机理; 总结了类石墨烯二硫化钼在二次电池、场效应晶体管、传感器、有机电致发光二极管和电存储等光电子器件领域的应用原理及其研究进展, 展望了这类新型二维层状化合物的研究前景.     

Electrochemical catalysis and corrosion of defective MoS2: Microscopic behaviors and density-functional-theory calculations

MoS₂ is an intriguing layered material widely used in catalysis, lubrication, optoelectronic devices and many other fields, where various structural defects (e.g., vacancies, edges, dopants) will be created in the synthesis and application processes. The promoting effect of defects on the electrochemical reactions, for example, oxygen reduction reaction (ORR) and hydrogen evolution reaction (HER), on MoS₂ has been intensively pursued for efficient catalysts, but should be avoided for durable and superior lubricants and optoelectronic devices working in many atmospheric/aqueous environments. Here, from the perspectives of density-functional-theory simulation, we review the contemporary research progresses on these electrochemical reactions and the underlying microscopic mechanisms of defective MoS₂, and finally project the future research trends and challenges on the electrochemical catalysis and corrosion of defective MoS₂.     

Fabrication of Large-Area Molybdenum Disulfide Device Arrays Using Graphene/Ti Contacts

Two-dimensional (2D) molybdenum disulfide (MoS₂) is the most mature material in 2D material fields owing to its relatively high mobility and scalability. Such noticeable properties enable it to realize practical electronic and optoelectronic applications. However, contact engineering for large-area MoS₂ films has not yet been established, although contact property is directly associated to the device performance. Herein, we introduce graphene-interlayered Ti contacts (graphene/Ti) into large-area MoS₂ device arrays using a wet-transfer method. We achieve MoS₂ devices with superior electrical and photoelectrical properties using graphene/Ti contacts, with a field-effect mobility of 18.3 cm²/V∙s, on/off current ratio of 3 × 10⁷, responsivity of 850 A/W, and detectivity of 2 × 10¹² Jones. This outstanding performance is attributable to a reduction in the Schottky barrier height of the resultant devices, which arises from the decreased work function of graphene induced by the charge transfer from Ti. Our research offers a direction toward large-scale electronic and optoelectronic applications based on 2D materials.     

Dual II Heterojunctions Metallic Phase MoS2/ZnS/ZnO Ternary Composite with Superior Photocatalytic Performance for Removing Contaminants

Fabricating a high-performance photocatalyst to efficiently solve serious environmental problems is an urgent affair. Herein, a series of MoS₂/ZnO composites were successfully fabricated through a facile hydrothermal route using Na₂MoO₄, (NH₂)₂CS and urchin-like ZnO as precursors. According to the results of XRD and XPS, it was found that ZnS appeared in MoS₂/ZnO composite; meanwhile, the content was positively correlated with the weight of the precursor (NH₂)₂CS. It should be noted that the morphology and the metallic phase content of MoS₂ grown in situ on the surface of ZnO were affected by the molar ratio of Na₂MoO₄ and ZnO. Benefiting from the special dual II heterojunctions of MoS₂/ZnS/ZnO ternary composite, the material exhibited excellent charge separation and transfer performances. In the photocatalytic measurements, the MoS₂/ZnS/ZnO (Na₂MoO₄:ZnO 1:2 MZ2) composite not only exhibits excellent photocatalytic Cr^VI reduction activity of 42.3×10⁻³ min⁻¹, but also displays remarkable adsorption performance (nearly 32.1 %) for Cr₂ . In addition, the ternary composite shows dominant photocatalytic Cr^VI reduction activities compared to other photocatalysts. This work provides a high-efficient MoS₂/ZnS/ZnO ternary photocatalyst for environmental treatment.     

Understanding the Photocatalytic Properties of Pt/CeOx/TiO2: Structural Effects on Electronic and Optical Properties

Ceria-titania interfaces play a crucial role in different chemical processes but are especially promising for the photocatalytic splitting of water using light in the visible wavelength region when Pt is added to the system. However, the complexity of this hierarchical structure hampers the study of the origin of its outstanding properties. In this article, the structural, electronic and optoelectronic properties of CeO₂/TiO₂ systems containing 1D, 2D, and 3D particles of ceria are analyzed by means of density functional calculations. Adsorption sites and vacancy effects have been studied to model Pt adsorption. Density of states calculations and absorption spectra simulations explain the behavior of these systems. Finally, these models are used for the screening of other metals that can be combined with this heterostructure to potentially find more efficient water splitting photocatalysts.     

扶手椅型二硫化钼纳米带的电子结构与边缘修饰

采用基于密度泛函理论的第一性原理计算方法, 研究了扶手椅型二硫化钼纳米带的几何构型与电子结构, 发现其稳定性与电子性质敏感地依赖于边缘修饰. 随着边缘修饰的H原子数增加, 纳米带变得更加稳定, 并在间接带隙半导体、半金属和直接带隙半导体之间转变. 纳米带的能带结构和电子态密度显示, 其费米能级附近的能带主要由边缘态贡献. 当二硫化钼纳米带两边用不同数目的H原子修饰时, 纳米带同时具有由这两种修饰引起的边缘态并且两种边缘态的相互影响很小. 研究了三类纳米带带隙与宽度的关系, 对于每个原胞修饰0个或8个H原子的纳米带, 带隙随宽度以3为周期振荡变化; 而对于每个原胞修饰4个H原子的纳米带, 带隙振荡不再具有周期并且振荡幅度变小.     

扶手椅型缺陷硫化钼纳米带电子性质的第一性原理计算

基于密度泛函理论的第一性原理计算,研究了含空位缺陷的扶手椅型二硫化钼纳米带的电子性质.发现缺陷会导致纳米带结构稳定性降低,单空位钼缺陷和三空位缺陷使得纳米带从半导体变成金属性,而单空位硫缺陷和两种双空位缺陷仅减小纳米带的带隙;电子态密度和能带的本征态表明缺陷纳米带费米能级附近的杂质态主要是缺陷态的贡献.研究了四类半导体性质的纳米带带隙与宽度的关系,对于完整的纳米带,带隙随宽度以3为周期振荡变化;而引入空位缺陷后,纳米带的带隙振荡不再具有周期且振荡幅度变小.同时发现,当缺陷的浓度变小后,缺陷仅使纳米带的带隙减小,不会使其变为金属性.这些结果有望打开其在新型纳电子器件中的应用潜能.     

Towards a Comprehensive Understanding of the Reaction Mechanisms Between Defective MoS2 and Thiol Molecules

Sulfur vacancies (SVs) inherent in MoS₂ are generally detrimental for carrier mobility and optical properties. Thiol chemistry has been explored for SV repair and surface functionalization. However, the resultant products and reaction mechanisms are still controversial. Herein, a comprehensive understanding on the reactions is provided by tracking potential energy surfaces and kinetic studies. The reactions are dominated by two competitive mechanisms that lead to either functionalization products or repair SVs, and the polarization effect from decorating thiol molecules and thermal effect are two determining factors. Electron‐donating groups are conducive to the repairing reaction whereas electron‐withdrawing groups facilitate the functionalization process. Moreover, the predominant reaction mechanism can be switched by increasing the temperature. This study fosters a way of precisely tailoring the electronic and optical properties of MoS₂ by means of thiol chemistry approaches.     

Review on the Properties of Boron-Doped Diamond and One-Dimensional-Metal-Oxide Based P-N Heterojunction

This review is mainly focused on the optoelectronic properties of diamond-based one-dimensional-metal-oxide heterojunction. First, we briefly introduce the research progress on one-dimensional (1D)-metal-oxide heterojunctions and the features of the p-type boron-doped diamond (BDD) film; then, we discuss the use of three oxide types (ZnO, TiO₂ and WO₃) in diamond-based-1D-metal-oxide heterojunctions, including fabrication, epitaxial growth, photocatalytic properties, electrical transport behavior and negative differential resistance behavior, especially at higher temperatures. Finally, we discuss the challenges and future trends in this research area. The discussed results of about 10 years’ research on high-performance diamond-based heterojunctions will contribute to the further development of photoelectric nano-devices for high-temperature and high-power applications.     

Atomically Thin Arsenene and Antimonene: Semimetal–Semiconductor and Indirect–Direct Band‐Gap Transitions

The typical two‐dimensional (2D) semiconductors MoS₂, MoSe₂, WS₂, WSe₂ and black phosphorus have garnered tremendous interest for their unique electronic, optical, and chemical properties. However, all 2D semiconductors reported thus far feature band gaps that are smaller than 2.0 eV, which has greatly restricted their applications, especially in optoelectronic devices with photoresponse in the blue and UV range. Novel 2D mono‐elemental semiconductors, namely monolayered arsenene and antimonene, with wide band gaps and high stability were now developed based on first‐principles calculations. Interestingly, although As and Sb are typically semimetals in the bulk, they are transformed into indirect semiconductors with band gaps of 2.49 and 2.28 eV when thinned to one atomic layer. Significantly, under small biaxial strain, these materials were transformed from indirect into direct band‐gap semiconductors. Such dramatic changes in the electronic structure could pave the way for transistors with high on/off ratios, optoelectronic devices working under blue or UV light, and mechanical sensors based on new 2D crystals.     

Size Dependence of Doping by a Vacancy Formation Reaction in Copper Sulfide Nanocrystals

Doping of nanocrystals (NCs) is a key, yet underexplored, approach for tuning of the electronic properties of semiconductors. An important route for doping of NCs is by vacancy formation. The size and concentration dependence of doping was studied in copper(I) sulfide (Cu₂S) NCs through a redox reaction with iodine molecules (I₂), which formed vacancies accompanied by a localized surface plasmon response. X‐ray spectroscopy and diffraction reveal transformation from Cu₂S to Cu‐depleted phases, along with CuI formation. Greater reaction efficiency was observed for larger NCs. This behavior is attributed to interplay of the vacancy formation energy, which decreases for smaller sized NCs, and the growth of CuI on the NC surface, which is favored on well‐defined facets of larger NCs. This doping process allows tuning of the plasmonic properties of a semiconductor across a wide range of plasmonic frequencies by varying the size of NCs and the concentration of iodine. Controlled vacancy doping of NCs may be used to tune and tailor semiconductors for use in optoelectronic applications.     

Transition metal dichalcogenide thin films for solar hydrogen production

In the last three decades, transition metal dichalcogenides (TMDs) have been extensively studied for electronic, photonic, and energy applications. Different efforts are directed to find a holy grail of efficient and economically feasible materials that could be simple in production and available on a large scale. The interest in TMDs (MoS₂, WS₂, MoSe₂, WSe₂) stems from their suitable electronic structure for efficient solar light absorption and simple exfoliation technique of 2D crystallites due to the van der Waals bonding of these materials. This led to various designs and combinations of 2D single layers that could form heterojunctions and multijunctions for efficient light absorption, charge carrier generation/separation, and its transfer in optoelectronic and energy harvesting devices. Herein, TMD thin films are reviewed as photoelectrodes for solar hydrogen evolution and compared to that of other more developed materials.     

Defect Engineering of MoS2 and Its Impacts on Electrocatalytic and Photocatalytic Behavior in Hydrogen Evolution Reactions

Molybdenum disulfide (MoS₂) has been regarded as a favorable photocatalytic co‐catalyst and efficient hydrogen evolution reaction (HER) electrocatalyst alternative to expensive noble‐metals catalysts, owing to earth‐abundance, proper band gap, high surface area, and fast electron transfer ability. In order to achieve a higher catalytic efficiency, defects strategies such as phase engineering and vacancy introduction are considered as promising methods for natural 2H‐MoS₂ to increase its active sites and promote electron transfer rate. In this study, we report a new two‐step defect engineering process to generate vacancies‐rich hybrid‐phase MoS₂ and to introduce Ru particles at the same time, which includes hydrothermal reaction and a subsequent hydrogen reduction. Compositional and structural properties of the synthesized defects‐rich MoS₂ are investigated by XRD, XPS, XAFS and Raman measurements, and the electrochemical hydrogen evolution reaction performance, as well as photocatalytic hydrogen evolution performance in the ammonia borane dehydrogenation are evaluated. Both catalytic activities are boosted with the increase of defects concentrations in MoS₂, which ascertains that the defects engineering is a promising route to promote catalytic performance of MoS₂.