Characteristics of alternating current hopping conductivity in DNA sequences

This paper presents a model to describe alternating current (AC) conductivity of DNA sequences, in which DNA is considered as a one-dimensional (1D) disordered system, and electrons transport via hopping between localized states. It finds that AC conductivity in DNA sequences increases as the frequency of the external electric field rises, and it takes the form of σ_ac (ω)～ω ²\ln ²(1/ω). Also AC conductivity of DNA sequences increases with the increase of temperature, this phenomenon presents characteristics of weak temperature-dependence. Meanwhile, the AC conductivity in an off-diagonally correlated case is much larger than that in the uncorrelated case of the Anderson limit in low temperatures, which indicates that the off-diagonal correlations in DNA sequences have a great effect on the AC conductivity, while at high temperature the off-diagonal correlations no longer play a vital role in electric transport. In addition, the proportion of nucleotide pairs p also plays an important role in AC electron transport of DNA sequences. For p < 0.5, the conductivity of DNA sequence decreases with the increase of p, while for p ≥ 0.5, the conductivity increases with the increase of p.     

DC electrical resistivity for CoxNi5/3−xSb1/3Fe1O4 ferrites

The DC electrical resistivity (p) was studied for Co substituted SbNi ferrites as a function of temperature and composition. The experimental results showed that DC resistivity, Curie temperature and activation energies for electrical conduction increase as Co-ion substitution decreases. The DC electrical conductivity increases as temperature increases. The real part of dielectric constant (e') was found to be inversely proportional to the root mean square value of the electrical resistivity.     

Li-doping effects on the electrical properties of ZnO films prepared by the chemical-bath deposition method

Zn_1−xLi_xO thin films, with x varying from 0.0 to 0.5, successfully have been deposited on glass substrates using the chemical bath deposition (CBD) technique. J–E characteristics, DC conductivity and dielectric measurements have been carried out. These measurements were done as a function of temperature, Li concentration and applied electric field intensity. The J–E characteristics are explained in terms of the Pool–Frenkel and Schottky effects. The J–E relation and DC conductivity are strongly dependent on both the Li concentration and applied electric field intensity. Dielectric hysteresis was observed between heating and cooling runs which revealed that the dielectric constant often increases slowly in the low-temperature region, then increases faster above the phase transition.     

Study of DC conductivity and relative magnetic permeability of nanoparticle NiZnFe2O4/PPy composites

The DC conductivity and the relative magnetic permeability have been measured as functions of temperature for five powder samples of nanoparticle ferrites (Ni_xZn_1−xFe₂O₄; x=0, 0.25, 0.5, 0.75 and 1), a pure polypyrrole (PPy) powder sample and many composite samples prepared by mixing different ratios of the ferrites to PPy. By comparing the results it is found that there is an obvious increase in DC conductivity of the ferrite/PPy composite samples compared to the corresponding pure ferrite samples, whereas compared to the pure PPy sample there is a decrease in DC conductivity. On the contrary, the magnetic permeability of the composites is higher than that of the pure PPy sample and lower than that of the pure ferrite samples as was expected.     

直流老化及热处理对ZnO压敏陶瓷缺陷结构的影响

在电场为3.2 kV/cm, 电流密度为50 mA/cm²条件下对ZnO压敏陶瓷进行了115 h的直流老化, 研究了直流老化对ZnO压敏陶瓷电气性能及缺陷结构的影响. 发现直流老化115 h 后ZnO压敏陶瓷的电位梯度、非线性系数分别从2845 V/cm, 38.3下降到51.6 V/cm, 1.1, 介电损耗中的缺陷松弛峰被增大的直流电导掩盖, 电模量中只观察到一个缺陷松弛峰, 低频区交流电导率急剧增大并且相应的电导活化能从0.84 eV下降到只有0.083 eV. 通过对直流老化后的ZnO压敏陶瓷在800 ℃进行12 h 的热处理, 发现其电气性能和介电性能都得到了良好的恢复并有一定的增强, 电位梯度、非线性系数恢复到3085 V/cm, 50.8, 电导活化能上升到0.88 eV. 另外, 其本征氧空位缺陷松弛峰也得到了一定的抑制. 因此, 认为热处理过程中氧在晶界处的扩散作用对ZnO压敏陶瓷的直流老化恢复起到了关键作用. 关键词： ZnO压敏陶瓷 介电性能 直流老化 热处理     

Effect of hopping rate and jump length of hopping electrons on the conductivity and dielectric properties of Co–Cd ferrite

The cobalt cadmium ferrite has an n-type conductivity. As the Cd addition (x) increases, the hopping rate increases and so the conductivity increases up to x=0.5. A sudden decrease in the hopping rate occurs above x=0.5 due to the decrease of Co²⁺ ions on octahedral sites. Above x=0.7, the hopping rate increases again and the conductivity increases. As the hopping length increases the conductivity decreases, i.e. conductivity is inversely proportional to hopping length, but is directly proportional to the hopping rate of electrons. As the ferrous ions increase on octahedral sites, the conductivity increases and the jumping length decreases leading to the increase of dielectric constant.     

DC conductivity for NixMg1–xFe2O4 ferrites

The DC electrical conductivity was studied as a function of both composition and temperature for the ferrite system Ni_xMg_1–xFe₂O₄ prepared by the usual ceramic technique. The experimental results proved that, the DC electrical conductivity increases as the temperature increases and as the nickel ion content and porosity decrease. The Curie temperature and the activation energies for electrical conduction increase as the nickel ion content increases.     

Study of ac hopping conductivity on one—dimensional nanometre systems

In this paper, we establish a one-dimensional random nanocrystalline chain model, we derive a new formula of ac electron－phonon－field conductance for electron tunnelling transfer in one-dimensional nanometre systems. By calculating the ac conductivity, the relationship between the electric field, temperature and conductivity is analysed, and the effect of crystalline grain size and distortion of interfacial atoms on the ac conductance is discussed. A characteristic of negative differential dependence of resistance and temperature in the low-temperature region for a nanometre system is found. The ac conductivity increases linearly with rising frequency of the electric field, and it tends to increase as the crystalline grain size increases and to decrease as the distorted degree of interfacial atoms increases.     

Transport properties of the antiferromagnetic systems with fluctuating valence

We present the calculation of the DC resistivity (conductivity) for the antiferromagnetic, two-band, extended s–f model. The influence on the finite bandwidth of the narrow 4f (5f) band on the transport properties of the model is investigated. We notice that the increase of the 4f (5f) bandwidth destroys the antiferromagnetic order and the system becomes paramagnetic in all temperatures. A systematic review of the DC resistivity (conductivity) is presented in the form of the 3D plots including different average occupation numbers of electrons per site (n=0.5, 0.75, 1, 1.25, 1.5, 1.75, 2), different relative positions of the 4f (5f) band and different 4f (5f) bandwidths. The calculated temperature dependence of the DC resistivity (conductivity) shows great similarities to the experimental results for many intermediate-valence rare-earth and actinide-based materials.     

Electric field perturbation caused by an increase in conductivity related to seismicity-induced atmospheric radioactivity growth

The influence of conductivity perturbation in the lower atmosphere on the DC electric field over a seismic region is investigated. This perturbation is related to the emanation of radon and other radioactive elements into the lower atmosphere as the seismic activity increases. An increase in the level of atmospheric radioactivity results in the appearance of additional ionization sources. The altitude dependence of the ion formation rate is calculated. An ionization source changes the atmospheric conductivity because of the appearance of ions with an equilibrium number density. The perturbation of the atmospheric conductivity is calculated as a function of the altitude. Lower atmosphere conductivity changes disturb the electric current that flows in the global atmosphere-ionosphere circuit. This disturbance is caused by an external current over a seismic region. DC electric field perturbations on the Earth’s surface and in the ionosphere are estimated. Published in Russian in Khimicheskaya Fizika, 2007, Vol. 26, No. 4, pp. 39–44. The text was translated by the authors.     

Properties of electropolymerised polypyrrole thin film on silver

This paper reports the properties of electropolymerised polypyrrole thin film on silver. The transmission, reflection, conductivity and dielectric behavior of polypyrrole coated silver has been studied in the 8-12 GHz frequency range of the electromagnetic spectrum. The polypyrrole thin film makes silver a better conductor for microwaves. The microwave conductivity is larger than the DC conductivity by many orders of magnitude. The real and imaginary part of dielectric constant increases in magnitude with increasing doping level and also it decreases in magnitude with increasing frequency.     

Preparation and measurements of electrical and spectroscopic properties of sodium thiosulphate doped polyaniline

Polyaniline has been synthesized and is doped with sodium thiosulphate. The doping of polyaniline (PANI) is done at two different time periods and DC conductivity is measured to see the effect of dopant. It has been observed that the crystallinity of PANI increases through doping which ultimately increases the conductivity. The conductivity result shows that the conduction is taking place through hopping process due to wide range of localized states present near the fermi level. Structural changes due to interaction of dopant species with PANI are studied through FTIR.     

Synthesis,characterization, conductivity and sensor application study of polypyrrole/silver doped nickel oxide nanocomposites

Conducting polymer composites of polypyrrole (PPy) and silver doped nickel oxide (Ag-NiO) nanocomposites were synthesised by in situ polymerisation of pyrrole with different contents of Ag-NiO nanoparticles. The formation of nanocomposites were studied by Fourier transform infrared (FTIR) and UV–vis spectroscopy, field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), thermogravimetric analysis (TGA), differential scanning calorimetry (DSC) and AC and DC conductivity measurements. The sensitivity of ammonia gas through the nanocomposite was analysed with respect to different contents of nanoparticles. Spectroscopic studies showed the shift in the absorption bands of polymer nanocomposite than that of pure PPy indicating the strong interaction between the nanoparticles and polymer chain. FESEM revealed the uniform dispersion of nanoparticles with spherically shaped metal oxide particles in PPy matrix. The XRD pattern indicated a decrease in amorphous domain of PPy with increase in loading of nanoparticles. The higher thermal stability and glass transition temperature of polymer nanocomposites than that of pure PPy were revealed from the TGA and DSC respectively. The dielectric properties, DC and AC conductivity of nanocomposites were much higher than PPy and these electrical properties increases with the loading of nanoparticles. The nanocomposites showed an enhancement in sensitivity towards ammonia gas detection than PPy.     

光照和偏压对微晶硅薄膜室温电导的影响

报道了SiCl₄/H₂等离子体化学气相沉积方法制备的未掺杂微晶硅薄 膜，在短时间光照或加上直流偏压后其室温暗电导随时间缓慢变化的行为. Raman散射谱结 果表明，薄膜的晶态体积比大于70%. 暗电阻的实验结果显示: 材料具有弱的持久光电导效 应；薄膜的暗电导在外加直流电场的作用下缓慢上升，电场反向后出现暗电导的恢复过程， 而且暗电导变化速度与偏压大小和温度有关. 根据异质结势垒模型，指出外加条件下载流子 的空间分离和重新分布以及材料非均匀性造成的势垒是引起电导 关键词： 微晶硅 电导率 薄膜     

The effect of sintering time and temperature on the electrical properties of MnZn ferrites

Polycrystalline samples of Zn_0.37Mn_0.58Fe_2.05O₄ have been prepared by the solid state reaction method. The structural characterization of the samples indicated that 1523 K is the most proper temperature for obtaining a single phase spinel structure. The DC electrical conductivity measurement was carried out by a two-probe method. Temperature dependent of DC electrical conductivity increases with increase in temperature ensuring the semiconductor nature of the samples. The drift mobility was estimated and found to be temperature dependant. The electrical conduction mechanism in these samples change from hopping, in the low temperature range, to polaron hopping in the high temperature range. The portion of energy Δε anticipated in hopping was determined. It decreases with increasing the sintering time and temperature. PACS 70; 71.20.Nr; 75.50.Gg     

钇掺杂钨酸铅晶体中的极化子和导纳谱

在室温至160 ℃范围内测量了掺钇钨酸铅(PWO∶Y)晶体的直流电导率,证明此时的载流子为极化子.观察到极化子由能带导电到跳跃导电转变引起的电导率极小.在此温区的交流导纳分析给出的交流电导率比直流电导率大三个数量级,说明此时的交流电导率主要是复介电常数的贡献.当样品的电导率和介电常数均随频率而变化时,从交流测量只能得到样品的总的导纳谱，而不能将其中的电导谱和介电谱分开. 关键词： 钨酸铅 电导谱 介电谱 导纳谱 极化子     

Effect of Ar bombardment on the electrical and optical properties of low-density polyethylene films

The influence of low-energy Ar ion beam irradiation on both electrical and optical properties of low-density polyethylene (LDPE) films is presented. The polymer films were bombarded with 320 keV Ar ions with fuences up to 1×10¹⁵ cm^?2. Electrical properties of LDPE films were measured and the effect of ion bombardment on the DC conductivity, dielectric constant and loss was studied. Optically, the energy gap, the Urbach’s energy and the number of carbon atoms in a cluster were estimated for all polymer samples using the UV–Vis spectrophotometry technique. The obtained results showed slight enhancement in the conductivity and dielectric parameters due to the increase in ion fluence. Meanwhile, the energy gap and the Urbach’s energy values showed significant decrease by increasing the Ar ion fluence. It was found that the ion bombardment induced chain scission in the polymer chain causing some carbonization. An increase in the number of carbon atoms per cluster was also observed.     

On the finite thermal conductivity of a one-dimensional rotator lattice

A heat transfer process is studied in a one-dimensional lattice of coupled rotators in which the orientation interaction between neighboring units is described by the periodic potential. Using this system as an example, it is demonstrated for the first time that one-dimensional lattices with a finite thermal conductivity in the thermodynamic limit can exist without substrate potential. As the temperature increases, the given system transforms from the state with an infinite thermal conductivity to the state with a finite thermal conductivity. The finiteness of the thermal conductivity stems from the existence of localized stationary excitations that interfere with heat transfer in the lattice. The lifetime and the concentration of these excitations increase with an increase in the temperature, which leads to a monotonic decrease in the thermal conductivity coefficient.     

Electrical transport properties of consolidated ZnSe quantum dots at and above room temperature

Here we report a comprehensive study on the prevailing conduction mechanism and dielectric relaxation behavior of consolidated Zinc Selenide quantum dots in the frequency range of 1 kHz ≤ f ≤ 1.5 MHz and in the temperature range of 298K ≤ T ≤ 573 K. The ac conductivity increases either with increase in temperature or with increase in frequency, which is explained by the Jonscher Power law. At higher temperatures, correlated barrier hopping is found to be the prevalent charge transport mechanism with a maximum barrier height of 0.88 eV. The dielectric constant of the sample is found to exhibit weak temperature dependence. DC conductivity study reveals the semiconducting nature of the sample and it is discussed in the light of polaron hopping conduction. From the impedance spectroscopic study, role of the grains and grain boundaries in the overall electrical transport properties have been elucidated by considering an electrical equivalent circuit (composed of resistances and constant phase elements). Electric modulus study reveals non-Debye responses of the sample in the experimental range.     

Fermi Arcs and DC Transport in Nanowires of Dirac and Weyl Semimetals

The transport properties and electron states in cylinder nanowires of Dirac and Weyl semimetals are studied paying special attention to the structure and properties of the surface Fermi arcs. The latter make the electric charge and current density distributions in nanowires strongly nonuniform as the majority of the charge density is accumulated at the surface. It is found that a Weyl semimetal wire also supports a magnetization current localized mainly at the surface because of the Fermi arcs contribution. By using the Kubo linear response approach, the direct current (DC) conductivity is calculated and it is found that its spatial profile is nontrivial. By explicitly separating the contributions of the surface and bulk states, it is shown that when the electric chemical potential and/or the radius of the wire is small, the electron transport is determined primarily by the Fermi arcs and the electrical conductivity is much higher at the surface than in the bulk. Due to the rise of the surface-bulk transition rate, the relative contribution of the surface states to the total conductivity gradually diminishes as the chemical potential increases. In addition, the DC conductivity at the surface demonstrates noticeable peaks when the Fermi level crosses energies of the surface states.