Single pulse near field study on a Co(3 nm)/Cu(6 nm)/Co(20 nm) multilayer structure by using a femtosecond laser

Single pulse near field study on a Co(3 nm)/Cu(6 nm)/Co(20 nm) multilayer structure was experimentally investigated with a laser pulse width of 200 fs at a wavelength of 775 nm. For the near field experiments, we have used polystyrene colloidal particles of 700 nm diameter deposited by spin coating on top of the multilayer structure, as well on top of Co (50 nm) and Cu (50 nm) thin films. The diameter and the morphologies of the holes were investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM). We have estimated the fluence thresholds values for the near field and discuss their values in respect with the enhancement factor of the intensity of the electromagnetic field due to the use of the colloidal particles. We compare the depths and the widths of the holes obtained at the same peak laser fluence for the Co thin film (50 nm), Cu thin film (50 nm) and Co(3 nm)/Cu(6 nm)/Co(20 nm) multilayer structure. Depending on the laser fluence, the ablation depth can reach the first, the second, or the third layer. Theoretical estimations of the intensity enhancement were done using the finite-difference time-domain (FDTD) by using the RSoft software. This type of a selective distribution of the ablation depth, in the near field regime, of a planar metal/dielectric interface can open new perspective in the excitation of propagating surface plasmons.     

Nanofoaming dynamics in biopolymers by femtosecond laser irradiation

We have recently shown that irradiation of self-standing films of the biopolymers collagen and gelatine with single femtosecond laser pulses produces a nanofoaming layer with regular bubble size which can be controlled by wavelength selection. Following these initial studies, here we report on the temporal evolution of the foaming effect by measurements in situ and in real time of the change in the transmittance of a cw probe HeNe laser through the irradiated films. Self standing films of the biopolymers were irradiated with 90 fs laser pulses at 800, 400, and 266 nm. For fluences below and above the modification threshold a permanent attenuation of the transmission occurs (increasing with fluence). The initial decay of the transmission is fast (around few tens of ns), and is followed by dynamics in the longer timescale (micro and milliseconds). The temporal evolution of the transmission measured upon fs laser irradiation is similar with that determined in the irradiation of the biopolymer films at 248 nm with 25 ns laser pulses. The method allows separating in time the different processes occurring after irradiation that lead to a permanent nanofoaming structure, while the results allow us to understand the mechanisms of femtosecond laser processing of the biopolymers and their interest in biomedical applications.     

Enhancement of magnetoresistance sensitivity in Co/Cu/NiFe trilayers by softening the Co hard layer

Co/Cu/NiFe trilayers were prepared by sputtering without magnetic field applied. We have found that the Co(2 nm)Cu(1 nm)NiFe(2 nm) trilayer using Ta as buffer layer exhibits an enhanced magnetoresistance (MR) sensitivity by a factor of more than 6 and a low saturation field of 9.3 Oe. Experimental results have demonstrated that the low saturation field is attributed to the softening of the Co layer by depositing the Co(2 nm)Cu(1 nm)NiFe(2 nm) sandwich on Ta layer. The decrease of the coercivity of the Co layer also plays an important role in the enhancement of MR sensitivity by reducing the effective coercivity of the NiFe layer, which is discussed in terms of the change in interlayer coupling.     

Part 2: Ultra-short pulse laser patterning of very thin indium tin oxide on glass substrates

We investigate selective patterning of ultra-thin 20 nm Indium Tin Oxide (ITO) thin films on glass substrates, using 343, 515, and 1030 nm femtosecond (fs), and 1030 nm picoseconds (ps) laser pulses. An ablative removal mechanism is observed for all wavelengths at both femtosecond and picoseconds time-scales. The absorbed threshold fluence values were determined to be 12.5 mJ cm⁻² at 343 nm, 9.68 mJ cm⁻² at 515 nm, and 7.50 mJ cm⁻² at 1030 nm for femtosecond and 9.14 mJ cm⁻² at 1030 nm for picosecond laser exposure. Surface analysis of ablated craters using atomic force microscopy confirms that the selective removal of the film from the glass substrate is dependent on the applied fluence. Film removal is shown to be primarily through ultrafast lattice deformation generated by an electron blast force. The laser absorption and heating process was simulated using a two temperature model (TTM). The predicted surface temperatures confirm that film removal below 1 J cm⁻² to be predominately by a non-thermal mechanism.     

On the physics of self-organized nanostructure formation upon femtosecond laser ablation

We present new results on femtosecond LIPSS on silicon, fostering the dynamic model of self-organized structure formation. The first set of experiments demonstrates LIPSS formation by irradiation with a femtosecond white light continuum. The ripples are, as usual, perpendicular to the light polarization with a fluence-dependent wavelength between 500 and 700 nm. At higher dose (fluence × number of shots), the LIPSS turn to much coarser structures. The second set of experiments displays the dose dependence of pattern evolution at about threshold fluence. In contrast to the general case of multi-pulse LIPSS, where a strong dependence of the structures on the laser polarization is observed, single-shot exposition of silicon at about the ablation threshold results in a concentric pattern of very regular sub-wavelength ripples following the oval shape of the irradiated spot, without any reference to the laser polarization. When increasing the number of pulses, the usual, typical ripples develop and then coalesce into broader perpendicular structures, interlaced with remnants of the first, finer ripples.     

Fabrication of uniform nanogrooves on 6H-SiC by femtosecond laser ablation

The fabrication of parallel deep nanogrooves on 6H-SiC by femtosecond laser ablation (λ=785 nm) is reported. The periodicity of the nanogrooves was measured to be about 200±20 nm and the depth exceeded 15 μm. The nanogrooves have high uniformity in size and pattern over the entire depth. Laser fluence is found to be the critical parameter to obtain these deep and regular nanogrooves. The feasibility for large area fabrication of nanogrooves by femtosecond laser ablation is demonstrated.     

Removal of doped poly(methylmetacrylate) from tungsten and titanium substrates by femto- and nanosecond laser cleaning

The influence of different laser pulse lengths on the removal of a polymer layer from metal substrates was investigated. As model systems, doped poly(methylmetacrylate) (PMMA) on titanium and tungsten substrates were selected.The ablation threshold and irradiation spot morphology of titanium and tungsten were compared for femtosecond (fs) and nanosecond (ns) laser irradiation and different pulse numbers. Nanosecond laser treatment resulted in a non-homogeneous surface morphology for both titanium and tungsten substrates. Femtosecond irradiation of tungsten revealed a homogeneous ablation spot with little changes in the surface morphology. For titanium, the formation of columnar structures within the irradiation spot was observed.Two different dopant concentrations were used for PMMA to achieve an equal linear absorption coefficient for the femto- and nanosecond laser wavelengths of 790 and 1064 nm. The best results were achieved for the removal of doped PMMA by femtosecond laser irradiation, where only a minimal modification of the metal surface was detected. In the case of nanosecond laser exposure, a pronounced change of the structure was observed, suggesting that damage-free cleaning of the selected metal may only be possible using femtosecond laser pulses. Different experimental parameters, such as laser fluence, pulse repetition rate and sample speed were also investigated to optimize the cleaning quality of doped PMMA from tungsten substrates with femtosecond laser pulses.     

Magnetoresistance in epitaxial [NiFe/Cu/Co(/Cu)] films

Epitaxial [NiFe/Cu/Co(/Cu)] films have been grown on Si(100)/Cu substrates using an ultrahigh vacuum evaporation method. Magnetoresistance (MR) and magnetization were measured at room temperature with maximum applied field, 40 kA/m. The (100) oriented [NiFe(3 nm)/Cu(6 nm)/Co(3 nm)/Cu(6 nm)] × 10 multilayers showed a sharply peaked MR curve (when the external field was applied along [011] direction) due to magnetization rotation of free NiFe layers separated from Co layers with thick Cu layers. Furthermore the interposition of a Ag layer in the Cu layer reduced the couplings between ferromagnetic layers and improved the sensitivity of the [NiFe/Cu/Co(/Cu)] film. Si(100)/Cu(5 nm)/[Co(3 nm)/Cu(2.4 nm)/Ag(0.2 nm)/Cu(2.4 nm)/NiFe(3 nm)/Cu(2.4 nm)/Ag(0.2 nm)/Cu(2.4 nm)] × 10 multilayers showed a resistivity change of about 8.2% per kA/m (12 Oe).     

Femtosecond laser micromilling of Si wafers

Femtosecond laser micromilling of silicon is investigated using a regeneratively amplified 775 nm Ti:Sapphire laser with a pulse duration of 150 fs operating at 1 kHz repetition rate. The morphological observation and topological analysis of craters fabricated by single-shot laser irradiation indicated that the material removal is thermal in nature and there are two distinct ablation regimes of low fluence and higher fluence with logarithmical relations between the ablation depth and the laser fluence. Crater patterns were categorized into four characteristic groups and their formation mechanisms were investigated. Femtosecond laser micromilling of pockets in silicon was performed. The effect of process parameters such as pulse energy, translation speed, and the number of passes on the material removal rate and the formation of cone-shaped microstructures were investigated. The results indicate that the microstructuring mechanism has a strong dependence on the polarization, the number of passes and laser fluence. The optimal laser fluence range for Si micromilling was found to be 2-8 J/cm² and the milling efficiency attains its maximum between 10 and 20 J/cm².     

Variety of nanostructures induced by femtosecond laser pulses on surface of Au/Cr film stack

Several nanostructures were obtained after irradiation with femtosecond laser pulse (130 fs, 800 nm, 1 kHz pulse repetition frequency) on Au/Cr film stack. The influence of laser parameters such as fluence (0.5 J/cm², 1.5 J/cm², 3 J/cm²) and the number of pulse were investigated. With single pulse irradiation, the nanoline and nonoparticle were obtained for the pulse fluence of 0.5 J/cm² and 3 J/cm², respectively. The formation mechanism of those nanostructures was discussed. The results of this experiment demonstrate that different kinds of nanostructures could be formed by varying the laser parameters such as fluence and the number of pulse.     

Effect of thermal annealing on the ac impedance of Co/Al2O3/Co/Al2O3/Co double-barrier MTJs

Double-barrier magnetic tunnel junctions (DBMTJs) were prepared from Co(75 nm)/Al₂O₃(2.3 nm)/Co(5 nm)/Al₂O₃(2.3 nm)/Co(50 nm) sputtering pentalayer films. The ac electrical properties of as-deposited DBMTJs and those annealed in a vacuum at 100–350 °C for 30 min were then investigated using a complex impedance spectroscopic technique. The ac impedance responses as a function of annealing temperature were further analyzed based on Maxwell's layered dielectric barrier and Maxwell–Wagner capacitor models after considering the DBMTJs as having double-capacitor-type structures. The effect of thermal annealing on the ac transport behavior of the DBMTJs was interpreted by examining the equivalent electric circuits fitted to Nyquist plots of each different sample. The effects were found to be due to changes in the structural characteristics in both bulk and interface morphologies of Co and Al₂O₃ layers. The structural morphology determined the different ac transport modes that occurred in the DBMTJs.     

Magnetic anisotropy of Co/Cu/Co films with indirect exchange coupling

The effect of isothermal annealing on the magnetic anisotropy, bilinear and biquadratic exchange coupling energies, and domain structure of Co/Cu/Co trilayer fiilms with d_Co=6 nm and d_Cu=1.0 and 2.1 nm prepared by magnetron sputtering has been studied. It is shown that, under isothermal annealing, the biquadratic coupling energy decreases by more than an order of magnitude in films with d_Cu=1.0 nm and increases in films with d_Cu=2.1 nm. The fourth-order magnetic anisotropy is shown to be related to the existence of biquadratic exchange energy.     

A general continuum approach to describe fast electronic transport in pulsed laser irradiated materials: The problem of Coulomb explosion

We present a continuum model, based on a drift-diffusion approach, aimed at describing the dynamics of electronic excitation, heating, and charge-carrier transport in different materials (metals, semiconductors, and dielectrics) under femtosecond and nanosecond pulsed laser irradiation. The laser-induced charging of the targets is investigated at laser intensities above the material removal threshold. It is demonstrated that, for near-infrared femtosecond irradiation, charging of dielectric surfaces causes a sub-picosecond electrostatic rupture of the superficial layers, alternatively called Coulomb explosion (CE), while this effect is strongly inhibited for metals and semiconductors as a consequence of superior carrier transport properties. On the other hand, application of the model to UV nanosecond pulsed laser interaction with bulk silicon has pointed out the possibility of Coulomb explosion in semiconductors. For such regimes a simple analytical theory for the threshold laser fluence of CE has been developed, showing results in agreement with the experimental observations. Various related aspects concerning the possibility of CE depending on different irradiation parameters (fluence, wavelength and pulse duration) and material properties are discussed. This includes the temporal and spatial dynamics of charge-carrier generation in non-metallic targets and evolution of the reflection and absorption characteristics. PACS  79.20.Ds, 52.50.Jm     

Current-induced magnetization reversal in high magnetic fields in Co/Cu/Co nanopillars

Current-induced magnetization dynamics in Co/Cu/Co trilayer nanopillars (approximately 100 nm in diameter) have been studied experimentally at low temperatures for large applied fields perpendicular to the layers. At 4.2 K an abrupt and hysteretic increase in resistance is observed at high current densities for one polarity of the current, comparable to the giant magnetoresistance effect observed at low fields. A micromagnetic model that includes a spin-transfer torque suggests that the current induces a complete reversal of the thin Co layer to alignment antiparallel to the applied field--that is, to a state of maximum magnetic energy.     

Identification of non-thermal and thermal processes in femtosecond laser-ablated aluminum

Non-thermal and thermal processes due to femtosecond laser ablation of aluminum (Al) at low, moderate, and high-fluence regimes are identified by Atomic Force Microscope (AFM) surface topography investigations. For this purpose, surface modifications of Al by employing 25 fs Ti: sapphire laser pulses at the central wavelength of 800 nm have been performed to explore different nano- and microscale features such as hillocks, bumps, pores, and craters. The mechanism for the formation of these diverse kinds of structures is discussed in the scenario of three ablation regimes. Ultrafast electronic and non-thermal processes are dominant in the lower fluence regime, whereas slow thermal processes are dominant at the higher fluence regime. Therefore, by starting from the ablation threshold three different fluence regimes have been chosen: a lower fluence regime (0.06–0.5 J cm^?2 single-shot irradiation under ultrahigh vacuum condition and 0.25–2.5 J cm^?2 single-shot irradiation in ambient condition), a moderate-fluence regime (0.25–1.5 J cm^?2 multiple-shot irradiation), and a high-fluence regime 2.5–3.5 J cm^?2 multiple-shot irradiation. For the lower fluence (gentle ablation) regime, around the ablation threshold, the unique appearance of individual, localized Nano hillocks typically a few nanometers in height and less than 100 nm in diameter are identified. These Nano hillock-like features can be regarded as a nonthermal, electronically induced phase transition process due to localized energy deposition as a result of Coulomb explosion or field ion emission by surface optical rectification. At a moderate-fluence regime, slightly higher than ablation threshold multiple-pulse irradiation produces bump-formation and is attributed to ultrafast melting (plasma formation). The high-fluence regime results in greater rates of material removal with highly disturbed and chaotic surface of Al with an appearance of larger protrusions at laser fluence well above the ablation threshold. These nonsymmetrical shapes due to inhomogeneous nucleation, cluster formation, and resolidification of a metallic surface after melting are attributable to slow thermal processes (ps time scale).     

Self-organization of thin metal films by irradiation with nanosecond laser pulses

Modifications in thin metal films under intensive laser irradiation were studied. Gold, silver, copper, chromium and aluminum films with the thickness of 100 nm were deposited on the glass substrate. Back-side irradiation through the substrate with a burst of nanosecond pulses tightly focused to a line was applied. The film removal threshold with a single pulse F_th was estimated for every material and laser fluence was kept above it in the range of 1.5-3 F_th during experiments. Diverse behavior of the films depending on the metal, the shift between pulses and laser fluence was observed. In chromium, the regular structures were developed in a quite wide range of processing parameters. In gold, three kinds of ripples were observed: transverse (similar to ripples in chromium), longitudinal and a structure of ripples oriented at 60° to each other. The combination of physical properties facilitated the regular assembly of the molten metal in chromium and to some extent in gold.     

Material processing of dielectrics with temporally asymmetric shaped femtosecond laser pulses on the nanometer scale

Laser material processing of dielectrics with temporally asymmetric femtosecond laser pulses of identical fluence, spectrum, and statistical pulse duration is investigated experimentally. To that end single shot structures at the surface of fused silica as a function of fluence and pulse shape are analyzed with the help of scanning electron microscopy. Structures for the bandwidth limited pulses show the known expansion in structure size with increasing laser fluence approaching the diffraction limit, which is 1.4 μm for the 0.5NA microscope objective used. In contrast, structures from the asymmetric pulses are remarkably stable with respect to variations in laser fluence and stay below 300 nm despite doubling the fluence. Different thresholds for surface material modification with respect to an asymmetric pulse and its time reversed counterpart are attributed to control of different ionization processes.     

Mechanisms of femtosecond laser-induced damage in magnesium fluoride

We studied the single-shot damage in magnesium fluoride irradiated by 800 nm femtosecond (fs) laser. The dependence of damage thresholds on the laser pulse durations from 60 to 750 fs was measured. The pump-probe measurements were carried out to investigate the time-resolved electronic excitation processes. A coupled dynamic model was applied to study the microprocesses in the interaction between fs laser and magnesium fluoride. The results indicate that both multiphoton ionization and avalanche ionization play important roles in the femtosecond laser-induced damage in MgF₂.     

Surface roughness assisted 100 kHz femtosecond laser induced nanostructure formation on silicon surface

Spontaneous nanostructure formations on roughened and smooth silicon surface by the femtosecond laser irradiation with the repetition rate of 100 kHz were systematically studied. In addition to the widely accepted so-called coarse ripple, which has the period analogous to the wavelength of the laser beam and aligns perpendicularly to the electric field of the incident laser beam, the ripple which has the period similar to the wavelength of the incident laser beam but aligns parallel to the electric field of the laser beam was observed on the roughened surface for the lower fluence and the higher number of pulse irradiation. Furthermore, the ensemble of dots formed by the enhancement of the local electric field was found on the roughened surface. This structure is preferentially formed around the scratches aligned perpendicularly to the electric field of the laser beam. These novel nanostructures are considered to be peculiar to the femtosecond laser irradiation and open the possibilities for precise control of the spontaneous nanostructure formation by femtosecond laser irradiation.     

Doping transition metal ions as a method for enhancement of ablation rate in femtosecond laser irradiation of silicate glass

We present a doping method to improve the femtosecond laser ablation rate and promote ablation selectivity. Doping transition metal ions, Co2＋ or Cu2＋, in silicate glass apparently change absorption spectroscopy and induce resonant absorption at wavelengths of 600 and 800 nm, respectively. Comparing with femtosecond laser processing of the same glass without doping, we find that the threshold fiuenee decreases and the ablation rate increases in resonant absorption in doped silicate glass. Resonant absorption effectively increases multiphoton ionization for seed-free electron generation, which in turn enhances avalanche ionization.