Anisotropic interface magnetoresistances in Pt(111)/Co n /Pt(111)

It is shown in terms of a fully relativistic spin-polarized ab initio-type approach that in Pt/Co/Pt trilayers two types of anisotropic magnetoresistance (AMR) have to be distinguished: an in-plane and an out-of-plane AMR. The obtained results, namely the magnetic field dependence as well as the thickness dependence of both AMR types are in very good agreement with a very recent experimental study, in which the in-plane as well as the out-of-plane AMR was reported for this system. The difference between the two types of AMR is visualized in terms of layer-resolved resistivities. In particular, it is confirmed that the anisotropic interface magnetoresistance (AIMR) introduced in the recent publication mainly originates in the vicinity of the Co/Pt interfaces.     

Anomalous anisotropic magnetoresistance in single-crystalline Co/SrTiO3(001) heterostructures

The anisotropic magnetoresistances (AMRs) in single crystalline Co(6 nm)/SrTiO₃(001) heterostructures from 5 K to 300 K with the current direction setting along either Co[100] or Co[110] are investigated in this work. The anomalous (normal) AMR is observed below (above) 100 K. With the current along Co[100] direction, the AMR shows negative longitudinal and positive transverse magnetoresistances at T< 100 K, while the AMR is inverse with the current along Co[110]. Meanwhile, the amplitude ratio between Co[110] and Co[100] is observed to be as large as 29 at 100 K. A crystal symmetry-adapted model of AMR demonstrates that interplay between the non-crystalline component and crossed AMR component results in the anomalous AMR. Our results may reveal more intriguing magneto-transport behaviors of film on SrTiO₃ or other perovskite oxides.     

Measurement of magnetic parameters of nanometer-thick conducting magnetic films using anisotropic magnetoresistive effect

The angular dependences of anisotropic magnetoresistance (AMR) are measured in conducting ferromagnetic films of nanometer thickness and layered structures containing such films and having the shape of narrow ribbons. These structures are used for preparing spin-dependent magnetic tunnel junctions possessing a giant magnetoresistance. The possibility of determining the main magnetic parameters, which are important for preparing magnetic junctions, by AMR angular measurements is demonstrated experimentally. The magnetic anisotropy axis, the saturating magnetic field, and the coercivity are determined in a 25-nm-thick permalloy (Py) film, in the structures FeMn film (15 nm)-Py film (10 nm) deposited by RF magnetron sputtering on a oxidized silicon substrate, as well as in the structure FeMn (15 nm)-Py (10 nm)-SiC (1.5 nm)-Py (10 nm) deposited on a sitall substrate. It is shown that, under the same conditions of Py films deposition, the magnetic anisotropy axis in the FeMn-Py structure is turned through 90° relative to the anisotropy axis of Py in structures without FeMn layers. The value of the exchange bias fields of the magnetization reversal measured in the structure FeMn (15 nm)-Py (10 nm)-SiC (1.5 nm)-Py (10 nm) by the AMR method is in good agreement with the result of measurement by the inductive method.     

The origin and control of the sources of AMR in (Ga,Mn)As devices

We present details of our experimental and theoretical study of the components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. We develop experimental methods to yield directly the non-crystalline and crystalline AMR components which are then independently analysed. These methods are used to explore the unusual phenomenology of the AMR in ultra thin (5 nm) (Ga,Mn)As layers and to demonstrate how the components of the AMR can be engineered through lithography induced local lattice relaxations. We expand on our previous [A.W. Rushforth, et al., Phys. Rev. Lett. 99 (2007) 147207] theoretical analysis and numerical calculations to present a simplified analytical model for the origin of the non-crystalline AMR. We find that the sign of the non-crystalline AMR is determined by the form of the spin-orbit coupling in the host band and by the relative strengths of the non-magnetic and magnetic contributions to the impurity potential.     

界面捕捉Level Set方法的(AMR)数值模拟

在流体力学方程的计算中采用高精度WENO格式,用AMR(adaptive mesh refinement)方法提高流场局部分辨率,在采用Level Set函数标定物质界面的计算中用GFM(ghost fluid method)方法进行界面处理,尝试将AMR技术与界面追踪技术相互融合并应用于数值模拟,对不同的模拟结果进行了比较.     

Anisotropic magnetoresistance components in (Ga,Mn)As

We explore the basic physical origins of the noncrystalline and crystalline components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. The sign of the noncrystalline AMR is found to be determined by the form of spin-orbit coupling in the host band and by the relative strengths of the nonmagnetic and magnetic contributions to the Mn impurity potential. We develop experimental methods yielding directly the noncrystalline and crystalline AMR components which are then analyzed independently. We report the observation of an AMR dominated by a large uniaxial crystalline component and show that AMR can be modified by local strain relaxation. Generic implications of our findings for other dilute moment systems are discussed.     

Reversing the training effect in exchange biased CoO/Co bilayers

We performed a detailed study of the training effect in exchange biased CoO/Co bilayers. High-resolution measurements of the anisotropic magnetoresistance (AMR) display an asymmetry in the first magnetization reversal process and training in the subsequent reversal processes. Surprisingly, the AMR measurements as well as magnetization measurements reveal that it is possible to partially reinduce the untrained state by performing a hysteresis measurement with an in-plane external field perpendicular to the cooling field. Indeed, the next hysteresis loop obtained in a field parallel to the cooling field resembles the initial asymmetric hysteresis loop, but with a reduced amount of spin rotation occurring at the first coercive field. This implies that the antiferromagnetic domains, which are created during the first reversal after cooling, can be partially erased.     

Adaptive mesh refinement based on high order finite difference WENO scheme for multi-scale simulations

In this paper, we propose a finite difference AMR-WENO method for hyperbolic conservation laws. The proposed method combines the adaptive mesh refinement (AMR) framework  and  with the high order finite difference weighted essentially non-oscillatory (WENO) method in space and the total variation diminishing (TVD) Runge–Kutta (RK) method in time (WENO-RK)  and  by a high order coupling. Our goal is to realize mesh adaptivity in the AMR framework, while maintaining very high (higher than second) order accuracy of the WENO-RK method in the finite difference setting. The high order coupling of AMR and WENO-RK is accomplished by high order prolongation in both space (WENO interpolation) and time (Hermite interpolation) from coarse to fine grid solutions, and at ghost points. The resulting AMR-WENO method is accurate, robust and efficient, due to the mesh adaptivity and very high order spatial and temporal accuracy. We have experimented with both the third and the fifth order AMR-WENO schemes. We demonstrate the accuracy of the proposed scheme using smooth test problems, and their quality and efficiency using several 1D and 2D nonlinear hyperbolic problems with very challenging initial conditions. The AMR solutions are observed to perform as well as, and in some cases even better than, the corresponding uniform fine grid solutions. We conclude that there is significant improvement of the fifth order AMR-WENO over the third order one, not only in accuracy for smooth problems, but also in its ability in resolving complicated solution structures, due to the very low numerical diffusion of high order schemes. In our work, we found that it is difficult to design a robust AMR-WENO scheme that is both conservative and high order (higher than second order), due to the mass inconsistency of coarse and fine grid solutions at the initial stage in a finite difference scheme. Resolving these issues as well as conducting comprehensive evaluation of computational efficiency constitute our future work.     

Modeling material responses by arbitrary Lagrangian Eulerian formulation and adaptive mesh refinement method

In this paper we report an efficient numerical method combining a staggered arbitrary Lagrangian Eulerian (ALE) formulation with the adaptive mesh refinement (AMR) method for materials modeling including elastic–plastic flows, material failure, and fragmentation predictions. Unlike traditional AMR applied on fixed domains, our investigation focuses on the application to moving and deforming meshes resulting from Lagrangian motion. We give details of this numerical method with a capability to simulate elastic–plastic flows and predict material failure and fragmentation, and our main focus of this paper is to create an efficient method which combines ALE and AMR methods to simulate the dynamics of material responses with deformation and failure mechanisms. The interlevel operators and boundary conditions for these problems in AMR meshes have been investigated, and error indicators to locate material deformation and failure regions are studied. The method has been applied on several test problems, and the solutions of the problems obtained with the ALE–AMR method are reported. Parallel performance and software design for the ALE–AMR method are also discussed.     

Standard and goal-oriented adaptive mesh refinement applied to radiation transport on 2D unstructured triangular meshes

Standard and goal-oriented adaptive mesh refinement (AMR) techniques are presented for the linear Boltzmann transport equation. A posteriori error estimates are employed to drive the AMR process and are based on angular-moment information rather than on directional information, leading to direction-independent adapted meshes. An error estimate based on a two-mesh approach and a jump-based error indicator are compared for various test problems. In addition to the standard AMR approach, where the global error in the solution is diminished, a goal-oriented AMR procedure is devised and aims at reducing the error in user-specified quantities of interest. The quantities of interest are functionals of the solution and may include, for instance, point-wise flux values or average reaction rates in a subdomain. A high-order (up to order 4) Discontinuous Galerkin technique with standard upwinding is employed for the spatial discretization; the discrete ordinates method is used to treat the angular variable.     

Origin of the planar Hall effect in nanocrystalline Co60Fe20B20

An angle dependent analysis of the planar Hall effect (PHE) in nanocrystalline single-domain Co(60)Fe(20)B(20) thin films is reported. In a combined experimental and theoretical study we show that the transverse resistivity of the PHE is entirely driven by anisotropic magnetoresistance (AMR). Our results for Co(60)Fe(20)B(20) obtained from first principles theory in conjunction with a Boltzmann transport model take into account the nanocrystallinity and the presence of 20 at.?% boron. The ab initio AMR ratio of 0.12% agrees well with the experimental value of 0.22%. Furthermore, we experimentally demonstrate that the anomalous Hall effect contributes negligibly in the present case.     

Direct comparison of anisotropic magnetoresistance and planar Hall effect in epitaxial Fe3O4 thin films

The angular dependence of anisotropic magnetoresistance (AMR) and planar Hall effect (PHE) were studied as a function of temperatures from the same epitaxial Fe₃O₄ film on MgO(001) substrates. The PHE contains only a twofold angular dependence, but the AMR below 200 K is constituted with both twofold and fourfold symmetric terms. Our results also prove that the origin of the fourfold symmetry of AMR is related to the lattice symmetry rather than the spin scattering near the antiphase boundaries.     

气相爆轰高阶中心差分-WENO组合格式自适应网格方法

研究一种高阶中心差分-WENO组合格式,并采用自适应网格方法进行二维和三维气相爆轰波的数值模拟.采用ZND爆轰模型的控制方程为包含化学反应源项的Euler方程组.组合格式在大梯度区采用WENO格式捕捉间断,在光滑区采用高阶中心差分格式提高计算效率.采用一种基于流场结构特征的自适应网格.计算结果,表明这种方法同时具有高精度、高分辨率和高效率的特点.     

Generalization of the N(p)N(n)N(p)N(n) scheme and the structure of the valence space

The N(p)N(n) scheme, which has been extensively applied to even-even nuclei, is found to be a very good benchmark for odd-even, even-odd, and doubly-odd nuclei as well. There are no apparent shifts in the correlations for these four classes of nuclei. The compact correlations highlight the deviant behavior of the Z = 78 nuclei and are used to deduce effective valence proton numbers near Z = 64 as well as to study the evolution of the Z = 64 subshell gap.     

Magneto-resistance of NiFe nanowire with zigzag shape

The anisotropic magneto-resistance (AMR) contributions of a zigzag-shaped NiFe wire were investigated. The magneto-resistance (MR) behaviors in different magnetic-field directions clearly reflect the angular relationships between the directions of the current and magnetic moment in the subdivisions. The resistance in remanence after magnetization along 0° in respect to the longer direction of zigzag was larger than that along 90°. Assumed that the difference appears due to the AMR contribution in the domain wall trapped at the corner, the MR ratio was estimated to be 1.2%, which is in good agreement with the AMR of the NiFe film. We clearly showed that the domain-wall resistance originates in the AMR.     

Planar Hall effect in electrodeposited CoCu/Cu multilayer

Electrodeposited CoCu/Cu multilayers were investigated by measuring both anisotropic magnetoresistance (AMR) and planar Hall effect (PHE) simultaneously. Studies have been carried out on a [Co(3 nm)/Cu(4 nm)]₅₀ multilayer sample, where a maximum of ?8.8 % GMR was observed at room temperature. A direct comparison of AMR and PHE output has been made both as a function of field and its relative orientation with respect to the current. Marked changes in PHE loops were observed at different angles (between magnetic field and applied current) whereas no noticeable changes could be found for AMR results. Such PHE outputs are the manifestations of complex spin reorganization due to strong antiferromagnetic-coupling between adjacent magnetic layers. In case of angular dependence output, when the applied field is less than the coercive field, the PHE output shows a deviation from the Sin2θ dependence that can be correlated to the domain wall propagation.     

几种元素的界面插层对Ta/NiFe/Ta的各向异性磁电阻效应的影响

文章中,通过磁控溅射制备了界面处插入4d,5d元素薄层(包括Ru,Pd,Ag和Au)的Ta/NiFe/Ta多层膜,并对它们的磁输运和磁性以及微结构进行了测试和表征.结果显示,Pd和Pt一样界面效应显著,能有效地提高NiFe薄膜退火前后的AMR比值,并抑制磁性死层.表面能比较小、熔点相对低的插层材料Ag,Au在退火过程中容易通过晶界扩散,强烈破坏其AMR性能.对于熔点高、表面能比较大的插层材料如Ru,磁性死层同样得到了抑制,NiFe薄膜的温度稳定性也可以得到提高.结果表明界面插层从界面电子自旋-轨道散射、界面死层和界面原子扩散等方面深刻影响NiFe薄膜的AMR. 关键词： 各向异性磁电阻 界面效应 原子扩散     

In-plane and out-of-plane anisotropic magnetoresistances in La1 − x Pb x MnO3 thin films

The temperature and field dependences of in-plane (IP) and out-of-plane (OP) anisotropic magnetoresistances (AMRs) have been measured in La_{1 ? x} Pb _x MnO₃ (LPMO) thin films having different microstructures, namely the single-crystal (SC), nanocrystalline (NC) and polycrystalline (PC) microstructures. The OP AMR, irrespective of the microstructure, is found to be considerably larger than the IP AMR. The magnetization data show that the larger OP AMR arises because magnetization is favoured in the film plane owing to strain anisotropy. In addition, the temperature and field dependences of both IP and OP AMRs are governed by the crystallinity of the films, indicating that the AMRs are strongly influenced by the magnetization process.     

A simple multigrid scheme for solving the Poisson equation with arbitrary domain boundaries

We present a new multigrid scheme for solving the Poisson equation with Dirichlet boundary conditions on a Cartesian grid with irregular domain boundaries. This scheme was developed in the context of the Adaptive Mesh Refinement (AMR) schemes based on a graded-octree data structure. The Poisson equation is solved on a level-by-level basis, using a “one-way interface” scheme in which boundary conditions are interpolated from the previous coarser level solution. Such a scheme is particularly well suited for self-gravitating astrophysical flows requiring an adaptive time stepping strategy. By constructing a multigrid hierarchy covering the active cells of each AMR level, we have designed a memory-efficient algorithm that can benefit fully from the multigrid acceleration. We present a simple method for capturing the boundary conditions across the multigrid hierarchy, based on a second-order accurate reconstruction of the boundaries of the multigrid levels. In case of very complex boundaries, small scale features become smaller than the discretization cell size of coarse multigrid levels and convergence problems arise. We propose a simple solution to address these issues. Using our scheme, the convergence rate usually depends on the grid size for complex grids, but good linear convergence is maintained. The proposed method was successfully implemented on distributed memory architectures in the RAMSES code, for which we present and discuss convergence and accuracy properties as well as timing performances.     

Large tunneling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions

We report a large tunneling anisotropic magnetoresistance (TAMR) in (Ga,Mn)As lateral nanoconstrictions. Unlike previously reported tunneling magnetoresistance effects in nanocontacts, the TAMR does not require noncollinear magnetization on either side of the constriction. The nature of the effect is established by a direct comparison of its phenomenology with that of normal anisotropic magnetoresistance (AMR) measured in the same lateral geometry. The direct link we establish between the TAMR and AMR indicates that TAMR may be observable in other materials showing room temperature AMR and demonstrates that the physics of nanoconstriction magnetoresistive devices can be much richer than previously thought.