Electro- and Magnetotransport near a LaAlO3/SrTiO3 Interphase Boundary

Comparison of the channel spectra of medium energy ion scattering, visualized for LaAlO₃/(001)SrTiO₃ heterostructures with a thickness of the lanthanum aluminate layer of one to six unit cells, indicates that the lanthanum aluminate layer grows coherently on a TiO₂-terminated surface of a strontium titanate substrate. The resistance of the interphase boundary in the heterostructure with a thickness of the LaAlO₃ layer of six unit cells decreased with temperature. At T < 100 K, the positive magnetoresistance and Hall mobility of electrons increased sharply with decreasing temperature.

     

Strontium oxide segregation at SrLaAlO4 surfaces

We report observable segregation of strontium oxide at the surface of strontium lanthanum aluminate single-crystals annealed in oxidizing conditions. Electron microscopy imaging and energy-dispersive X-ray spectroscopy showed that Sr and O segregation occurs on strontium lanthanum aluminate surfaces in the form of polycrystalline islands. The appearance of islands on the (100) and other high-free energy surfaces is strongly suggestive of rocksalt SrO formation. The loss of strontium oxide from the bulk is not compensated solely by point defects, but rather by non-stoichiometric stacking faults which locally result in stable perovskite structures.     

Domain epitaxial growth of ferroelectric films of barium strontium titanate on sapphire

A model of the epitaxial growth of crystalline multicomponent films on single-crystal substrates with a domain correspondence is presented using a solid solution of barium strontium titanate on sapphire substrates (r cut). The domain epitaxial growth suggests the matching of the lattice planes of the film and the substrate having similar structures by comparison of domain multiple of an integral number of the interplanar spacings. Variation of the component composition of the solid solution enables changes in the domain size in the range sufficient for epitaxial growth. This method can be used to project the epitaxial growth of films of various solid solutions on single-crystal substrates.     

Substrate-dependent structure, microstructure, composition and properties of nanostructured TiN films

Titanium nitride films of a thickness of ∼1.5 μm were deposited on amorphous and crystalline substrates by DC reactive magnetron sputtering at ambient temperature with 100% nitrogen in the sputter gas. The growth of nanostructured, i.e. crystalline nano-grain sized, films at ambient temperature is demonstrated. The microstructure of the films grown on crystalline substrates reveals a larger grain size/crystallite size than that of the films deposited on amorphous substrates. Specular reflectance measurements on films deposited on different substrates indicate that the position of the Ti-N 2s band at 2.33 eV is substrate-dependent, indicating substrate-mediated stoichiometry. This clearly demonstrates that not only structure and microstructure, but also chemical composition of the films is substrate-influenced. The films deposited on amorphous substrates display lower hardness and modulus values than the films deposited on crystalline substrates, with the highest value of hardness being 19 GPa on a lanthanum aluminate substrate.     

密封容器中后处理制备Tl2Ba2CaCu2Oy高温超导薄膜及其性能研究

以铝酸镧（001）单晶为基片，采用两步法制备Tl2Ba2CaCu2Oy（Tl 2212）高 温超导薄膜.首先，利用脉冲激光沉积（PLD）工艺沉积Ba2CaCu2Ox非晶前驱体薄膜；然后，前驱体薄膜在高温（720—850℃）下密封钢容器里铊化结晶形成Tl 2212薄膜.XRD结果表明Tl2212 薄膜是沿c轴方向生长的，其相组成为Tl 2212，摇摆曲线（0012）的半高宽为0.72° ，SEM图像显示其表面光滑平整，其零电阻温度为106.2K. 关键词： Tl 2212超导薄膜 脉冲激光沉积     

Efficiency of thermoelectric conversion in ferroelectric film capacitive structures

Thermal heating/cooling conditions for metal-insulator-metal structures based on barium strontium titanate ferroelectric films are studied by numerical methods with the aim of their application in capacitive thermoelectric converters. A correlation between the thermal and capacitive properties of thin-film ferroelectric capacitors is considered. The time of the temperature response and the rate of variation of the capacitive properties of the metal-insulator-metal structures are determined by analyzing the dynamics of thermal processes. Thermophysical calculations are carried out that take into consideration the real electrical properties of barium strontium titanate ferroelectric films and allow estimation of thermal modulation parameters and the efficiency of capacitive thermoelectric converters on their basis.     

Magnetic and Resistive Properties of Magnetite/Iridate Heterostructures

Journal of Experimental and Theoretical Physics - A technique is developed to grow epitaxial heterostructures consisting of strontium iridate (SrIrO3) and lanthanum–strontium manganite...     

Structure of (Ba0.7Sr0.3)TiO3 films prepared by chemical solution deposition during crystallization on a sublayer

Barium strontium titanate (BST) films on Si-SiO₂-Ti-Pt substrates are prepared by chemical solution deposition upon crystallization on a sublayer. The structure of the BST films is investigated using transmission electron microscopy, high-resolution electron microscopy, and x-ray diffraction analysis.     

Influence of the substrate temperature on the initial stages of growth of barium strontium titanate films on sapphire

The initial stages of growth of ferroelectric films of barium strontium titanate BaSrTiO₃ on singlecrystal sapphire substrates have been experimentally investigated as a function of the deposition temperature. It has been shown that, at the initial stage of the condensation of the BaSrTiO₃ film on sapphire, the temperature of the substrate determines the mechanisms of mass transfer of deposited atoms and the processes of nucleation.     

Capacitor structures based on strontium titanate films

The structural properties of strontium titanate films and the electrical parameters of the related capacitor structures have been investigated. It has been found that the deposition temperature exerts a direct effect on the phase composition of the films, the degree of perfection of the crystal structure, and the internal stresses in the lattice. The strontium titanate films deposited at a temperature of 800°C are single-phase, have a rather perfect crystal structure, and possess minimum internal stresses. It has been shown that the capacitor structures based on oriented strontium titanate films provide a twofold decrease in the level of dielectric loss as compared to similar structures based on barium strontium titanate solid solution films at a frequency of 1.5 GHz.     

Magnetoresistance of La0.67Ca0.33MnO3 films the coherent growth of which is disturbed by mechanical stress relaxation

Because of a large (m = 1.8%) lattice mismatch between La_0.67Ca_0.33MnO₃ and LaAlO₃, manganite films grown on a lanthanum aluminate substrate experience biaxial mechanical compression stresses. Strong adhesion to the substrate causes a substantial tetragonal distortion (γ ≈ 1.04) of the unit cell in a 20-nm-thick layer of the manganite film coherently grown on (001)LaAlO₃, while in the remaining part (≈75%) of the manganite film, stresses partially relax. The stress relaxation decreases γ and increases the effective volume of the unit cell of the La_0.67Ca_0.33MnO₃ film. The relaxed part of the La_0.67Ca_0.33MnO₃ film consists of crystallites 50–200 nm across azimuthally misoriented by approximately 0.3°. The temperature dependences of the resistivity and negative magnetoresistance of the manganite films exhibit maxima at 240 and 215 K, respectively. At temperatures below 50 K, the dependence of the resistivity on the magnetic induction taken with the induction varying from 0 to 14 T and vice versa becomes hysteresis.     

Initial stages of the growth of barium strontium titanate films on a semi-isolating silicon carbide substrate

The initial stages of the growth of ferroelectric barium strontium titanate films on single-crystal silicon carbide substrates have been studied for the first time. The choice of a substrate with high thermal conductivity has been due to the possibility of applying these structures in powerful microwave devices. The temperature ranges separating the mechanism of the surface diffusion of deposited atoms from the diffusion via a gaseous phase during the growth of multicomponent films have been determined. The studies show that the mass transfer by means of surface diffusion leads to the formation of small-height nuclei that cover a large area of the substrate, whereas the mass transfer via a gaseous phase leads to the formation of a “columnar” islandtype structure with small percentage of covering the substrate and larger island heights.     

SrBi4Ti4O15铁电薄膜的制备工艺及薄膜生长机理 研究

以氯化锶，硝酸铋和钛酸丁酯为原料，柠檬酸为络合剂，乙二醇为交联剂，无水乙醇为钛酸 丁酯的溶剂，盐酸为硝酸铋的溶剂，去离子水为氯化锶的溶剂，配制了稳定的SrBi_{4Ti4O15(SBTi)前驱液.采用溶胶凝胶工艺，在Pt/Ti/SiO2 /Si基片上制备了a轴取向增强的SBTi铁电薄膜.研究了一次性晶化快速退火工艺、两 层晶化快速退火工艺、逐层晶化快速退火工艺以及成膜次数对薄膜结晶性、微观结构和生长 行为的影响.实验结果表明，逐层快速退火工艺可有效抑制焦绿石相的形成；随着涂覆次数 的增加，薄膜的结晶性变好；由于SBTi晶体生长的各向异性及单层膜厚对晶体沿(119)方向 生长的限制，随着涂覆次数的增加，SBTi薄膜(119)峰和(200)峰的强度逐渐增大，而(00l) 峰的强度反而略有减小，从而使I(200)/I(119)，I(200)/I(0010)，I(119)/I(0010)逐渐增 大. 关键词： 铁电薄膜 钛酸锶铋 逐层快速退火工艺 生长行为}     

Specific features of the ferroelectric state in two-layer barium strontium titanate-based heterostructures

The structural properties of one- and two-layer heterostructures based on the barium–strontium titanate of various compositions deposited by the Frank–Van der Merve on a magnesium oxide substrate have been studied. The heterostructures have been prepared by the rf sputtering of the stoichiometric ceramic targets in a Plazma 50 SE deposition system. The principal difference of this method of deposition from known analogs is that the growth of single-crystal films occurs from a disperse oxide phase formed in the plasma of a high-current rf discharge during the ceramic target sputtering at the cluster level. The peculiarities of the manifestation of the ferroelectric state in the two-layer heterostructures when changing the sequence order of the films with various compositions of barium–strontium titanate.     

Investigation of the initial stages of the growth of barium strontium titanate ferroelectric films by medium-energy ion scattering

The initial stages of the growth of barium strontium titanate (BaSrTiO₃) ferroelectric films deposited on single-crystal sapphire substrates have been studied using medium-energy ion scattering. It has been found that, depending on the variation in the deposition temperature, the mechanisms of formation of the ferroelectric film change as a result of the change in the mechanism of mass transfer of the deposited atoms. It has been shown that the minimum thickness of the continuous ferroelectric film on sapphire is of the order of 6 nm.     

Quasi-ordered nanostructures on the surface of strontium titanate

The results of the investigation of the surface of strontium titanate single crystals after treatment with high-energy plasma are presented. The surface morphology of the strontium titanate single crystals and the change in its characteristics after plasma treatment have been studied using electron scanning and atomicforce microscopy. A change in the electronic state of a part of the titanium ions and a change in the stoichiometry in the modified near-surface layer have been found by the method of valence shift of X-ray lines. A preliminary analysis has been made of the conditions providing the formation of single- and two-level systems of ordered crystallites with sizes of 10⁻⁷–10⁻¹⁰ m on the surface of single-crystal strontium titanate with impurities of ions of the iron and lanthanum groups.     

RF sputtered thin films of highT cY-Ba-Cu-O

Y-Ba-Cu-O films are grown on strontium titanate substrates by RF sputtering from a single composite target. A barium-deficient annular ring with diameter equal to that of the target dimension is repeatedly observed. Films inside this ring are deposited exclusively at the close target-substrate distance. At larger distances the films grow more in exterior regions rather than in the interior region of the ring. Stoichiometry, structural morphology and superconducting transition temperatures are studied for various regions of the film. The films are superconducting when sintered in flowing oxygen at 950°C with onset at 100 K and a broad transition width.     

Mechanochemically assisted synthesis of La0.7Sr0.3MnO3 nanoparticles and induction heating properties of the composites with hydroxyapatite

Perovskite lanthanum strontium manganese oxide (LSMO, strontium-substituted lanthanum manganite) La_0.7Sr_0.3MnO₃ nanoparticles were synthesized via the low-temperature calcination of the precursor, which was prepared using a mechanochemical route. A powder mixture of lanthanum chloride, strontium chloride, manganese chloride and sodium carbonate was high-energy milled by a planetary ball mill under semiwet (moist) conditions to obtain the precursor. To study the mechanochemical effects on the formation of LSMO, a thermogravimetric (TG) analysis was conducted for the precursors prepared under various conditions; the precursors and the intermediates formed during calcination were identified by X-ray diffraction (XRD). The calcination of the milled precursor at 600 °C resulted in the formation of LSMO nanoparticles with good induction heating properties. The LSMO/hydroxyapatite composites exhibited rapid temperature increases in an AC magnetic field. The obtained results demonstrate that the LSMO nanoparticles and LSMO/hydroxyapatite composites are promising candidates for magnetic hyperthermia treatments.     

RF-plasma assisted pulsed laser deposition of nitrogen-doped SrTiO3 thin films

Perovskite-type nitrogen substituted SrTiO₃ thin films were deposited with a one-step process by RF-plasma assisted pulsed laser deposition from a SrTiO₃ target using a N₂ plasma, while deposition with a NH₃ plasma yields films with almost no incorporated nitrogen. The deposited films exhibit a cubic perovskite-type crystal structure and reveal oriented growth on MgO(100) substrates. The unit cell parameters of the studied N-doped SrTiO₃ films range within 3.905<a<3.918 Å, which is slightly larger than for SrTiO₃ (a=3.905 Å). The nitrogen content in the deposited films varies from 0.2 to 0.7 atom%. The amount of incorporated nitrogen in the films decreases with increasing RF-power, while the N₂ flow rate does not have any pronounced influence on the N content. Nitrogen incorporation results in an increased optical absorption at 400–600 nm, which is associated with N(2p) energy states that have a higher energy level than the valence band in strontium titanate. The optical band gap energies in the studied N-doped SrTiO₃ films are at 3.2–3.3 eV, which is very similar to that of pure strontium titanate (～3.2 eV). Films deposited with NH₃ for the RF-plasma exhibit a lower degree of crystallinity and reveal almost no nitrogen incorporation into the crystal lattice.     

Compositional effects on the structure and magnetotransport properties of lacunar La<Subscript>1-x</Subscript>MnO<Subscript>3-δ</Subscript> films (x>0) grown by MOCVD

Liquid-injection MOCVD was successfully applied to the growth of La_1-xMnO_3-films. A structural study by means of X-ray diffraction and transmission electron microscopy was performed on lanthanum manganite films grown under different (P[O₂]–T) conditions. The phase relations of lanthanum manganite with different manganese oxide phases (MnO, Mn₃O₄) are discussed, together with structural relations. Tuning of T_C via the concentration of La vacancies allows significant magnetoresistance at room temperature to be obtained (about 10% in a 1T field). PACS 68.55; 75.30; 81.15