Time of flight secondary ion mass spectrometric determination of molecular weight distributions of low polydispersity poly(dimethyl siloxane) with polyatomic primary ions

This work reports a comparison of oligomer and fragment ion intensities resulting from primary ion bombardment with several primary ion sources (Bi_n⁺, C₆₀⁺, and Cs⁺) at various energies in secondary ion mass spectrometry (SIMS). Although the use of polyatomic primary ions are of great interest due to increased secondary ion efficiency and yield, we demonstrate that monatomic primary ions result in increased oligomer ion yield for polymers prepared as submonolayer films on silver substrates. The enhancement of oligomer secondary ion yield with monatomic ions is evidence that monatomic primary ions have a shallower sampling depth than polyatomic ions, resulting from a collision cascade that is less energetic at the sample surface. The results are also consistent with a lower degree of fragmentation of the resultant secondary ions, which is observed when evaluating the fragmentation data and the spectral data.     

Use of C60 cluster projectiles for sputter depth profiling of polycrystalline metals

We have investigated the merits of fullerene cluster ions as projectiles in time‐of‐flight secondary neutral mass spectrometry (ToF‐SNMS) sputter depth profiling of an Ni:Cr multilayer sample similar to the corresponding NIST depth profiling standard. It is shown that sputter erosion under bombardment with C₆₀⁺ ions of kinetic energies between 10 and 20 keV provides good depth resolution corresponding to interface widths of several nanometres. This depth resolution is maintained during the complete removal of the multilayer stack with a total thickness of 500 nm. This finding is in contrast to the case where atomic Ga⁺ projectile ions of comparable kinetic energy are used, demonstrating the unique features of cluster projectiles in sputter depth profiling. Copyright © 2004 John Wiley & Sons, Ltd.     

Influence of the organic layer thickness in (Metal-Assisted) secondary ion mass spectrometry using Ga+ and C 60 + projectiles

This article investigates the influence of the organic film thickness on the characteristic and molecular ion yields of polystyrene (PS), in combination with two different substrates (Si, Au) or gold condensation (MetA-SIMS), and for atomic (Ga⁺) and polyatomic (C ₆₀ ⁺ ) projectile bombardment. PS oligomer (m/z ～ 2000 Da) layers were prepared with various thicknesses ranging from 1 up to 45 nm on both substrates. Pristine samples on Si were also metallized by evaporating gold with three different thicknesses (0.5, 2, and 6 nm). Secondary ion mass spectrometry was performed using 12 keV atomic Ga⁺ and C ₆₀ ⁺ projectiles. The results show that upon Ga⁺ bombardment, the yield of the fingerprint fragment C₇H ₇ ⁺ increases as the PS coverage increases and reaches its maximum for a thickness that corresponds to a complete monolayer (～3.5 nm). Beyond the maximum, the yields decrease strongly and become constant for layers thicker than 12 nm. In contrast, upon C ₆₀ ⁺ bombardment, the C₇H ₇ ⁺ yields increase up to the monolayer coverage and they remain constant for higher thicknesses. A strong yield enhancement is confirmed upon Ga⁺ analysis of gold-metallized layers but yields decrease continuously with the gold coverage for C ₆₀ ⁺ bombardment. Upon Ga⁺ bombardment, the maximum PS fingerprint ion yields are obtained using a monolayer spin-coated on gold, whereas for C ₆₀ ⁺ , the best results are obtained with at least one monolayer, irrespective of the substrate and without any other treatment. The different behaviors are tentatively explained by arguments involving the different energy deposition mechanisms of both projectiles.     

Investigation of some pentasubstituted 1,4-dihydropyridines by means of fast ion bombardment,chemical ionization and electron impact mass spectrometry

Positive fast ion bombardment, positive chemical ionization (CI⁺) and positive electron impact (EI) ionization mass spectrometry were used to investigate a number of relatively large and structurally related organic molecules. Some of the major dissociation pathways observed in the CH₄-CI⁺ mass spectra are not present under NH₃-CI⁺ conditions, but are obtained in the collision-induced dissociation (CID) spectrum of the 50 eV MH⁺ molecular ion, formed in the latter reaction. The resemblance between the EI mass spectra and their fast ion bombardment counterparts, the effect of changing the energy of the bombarding Cs⁺ ion beam over the range 2–16 keV and the different degrees of internal excitation of ions formed in different CI reagent gases are discussed.     

Are cluster ion analysis beams good choices for hydrogen depth profiling using time‐of‐flight secondary ion mass spectrometry?

For more than three decades, time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) has been used for elemental depth profiling. In recent years, cluster primary ion sources (principally, C₆₀⁺, Bi_n⁺, and Au_n⁺) have become widely available, and they can greatly enhance the signal intensity of molecular ions (10–1000 times). Understanding the performance of cluster ion analysis beams used in elemental depth profiling can greatly assist normal ToF‐SIMS users in choosing the optimal analysis beam for depth profiling work. Presently, however, the experimental data are lacking, and such choices are difficult to make. In this paper, hydrogen and deuterium depth profiling were studied using six different analysis beams—25 keV Bi⁺, Bi₃⁺, Bi₅⁺, 50 keV Bi₃²⁺, 10 keV C₆₀⁺, and 20 keV C₆₀²⁺. The effort shows that cluster primary ions do enhance H^? and D^? yields, but the enhancement is only about 1.5–4.0 times when compared to atomic Bi⁺ ions. Because the currents of atomic ion analysis beams are much stronger than the currents of cluster ion analysis beams for most commercial ToF‐SIMS instruments, the atomic ion analysis beams can provide the strongest H^? and D^? signal intensities, and may be the best choices for hydrogen and deuterium depth profiling. In addition, two representative nuclides, ³⁰Si and ¹⁸O, were also studied and yielded results similar to those of H^? and D^?. Copyright © 2011 John Wiley & Sons, Ltd.     

Enhancement of the positive secondary ion yield during low‐energy,dual‐beam depth profiling of polytetrafluoroethylene with 1‐keV Cs+

This work documents the behaviour of the positive secondary ion yield of bulk polytetrafluoroethylene (PTFE) under dual‐beam depth profiling conditions employing 1 keV Ar⁺, Cs⁺ and SF₅⁺. A unique chemical interaction is observed in the form of a dramatic enhancement of the positive secondary ion yield when PTFE is dual‐beam profiled with 1 keV Cs⁺. The distinct absence of such an enhancement is noted for comparison on two non‐fluorinated polymers, polyethylene terephthalate (PET) and polydimethylsiloxane (PDMS). The bulk PTFE was probed using 15‐keV, ⁶⁹Ga⁺ primary ions in dual beam mode under static conditions; 1‐keV Ar⁺ (a non‐reactive, light, noble element), Cs⁺ (a heavier metallic ion known to form clusters) and SF₅⁺ (a polyatomic species) served as the sputter ion species. The total accumulated primary ion dose was of the order of 10¹⁵ ions/cm², which is well beyond the static limit. The enhancement of the positive secondary yield obtained when profiling with 1‐keV Cs⁺ far exceeds that obtained when SF₅⁺ is employed. An explanation of this apparent reactive ion effect in PTFE is offered in terms of polarisation of C? F bonds by Cs⁺ in the vicinity of the implantation site thereby predisposing them to facile scission. The formation of peculiar, periodic Cs_xF_y⁺ (where y = x ? 1) and Cs_xC_yF_z⁺ clusters that can extend to masses approaching 2000 amu are also observed. Such species may serve as useful fingerprints for fluorocarbons that can be initiated via pre‐dosing a sample with low‐energy Cs⁺ prior to static 15‐keV Ga⁺ analysis. Copyright © 2005 John Wiley & Sons, Ltd.     

Quadrupole ion trap mass spectrometry of fullerenes

The fullerenes C₆₀ and C₇₀ can be ionized by desorption from a liquid matrix upon bombardment by Cs⁺ ions of 7 keV kinetic energy. The resulting radical cations, when activated in the ion trap by collisions with Xe target, in the presence of helium, undergo extensive dissociation by loss of multiple C₂ units. Large internal energies are deposited into these molecular ions and the dissociation efficiency is in excess of 60%.     

Depth profiling of Irganox‐3114 nanoscale delta layers in a matrix of Irganox‐1010 using conventional Cs+ and O2+ ion beams

Depth profiling of an organic reference sample consisting of Irganox 3114 layers of 3 nm thickness at depths of 51.5, 104.5, 207.6 and 310.7 nm inside a 412 nm thick Irganox 1010 matrix evaporated on a Si substrate has been studied using the conventional Cs⁺ and O₂⁺ as sputter ion beams and Bi⁺ as the primary ion for analysis in a dual beam time‐of‐flight secondary ion mass spectrometer. The work is an extension of the Versailles Project on Advanced Materials and Standards project on depth profiling of organic multilayer materials. Cs⁺ ions were used at energies of 500 eV, 1.0 keV and 2.0 keV and the O₂⁺ ions were used at energies of 500 eV and 1.0 keV. All four Irganox 3114 layers were identified clearly in the depth profile using low mass secondary ions. The depth profile data were fitted to the empirical expression of Dowsett function and these fits are reported along with the full width at half maxima to represent the useful resolution for all the four delta layers detected. The data show that, of the conditions used in these experiments, an energy of 500 eV for both Cs⁺ beam and O₂⁺ beam provides the most useful depth profiles. The sputter yield volume per ion calculated from the slope of depth versus ion dose matches well with earlier reported data. Copyright © 2013 John Wiley & Sons, Ltd.     

Optimization of the depth resolution for profiling SiO2/SiC interfaces by dual-beam TOF-SIMS combined with etching

To examine precise depth profiles at the interface of SiO₂/SiC, a high resolution that can detect slight discrepancies in the distribution is needed. In this study, an experimental method to achieve a high resolution of less than 1 nm was developed by using dual-beam time-of-flight secondary ion mass spectrometry (TOF-SIMS). The analysis was preceded by the following three steps: (1) determination of the optimal analytical conditions of the analysis beam (Bi⁺) and sputtering beam (Cs⁺), (2) verification of the etching methods to thin the SiO₂ layer, and (3) confirmation of the benefits of the low-energy sputtering beam directed toward SiO₂/SiC samples. By using the secondary ion intensity peak-to-valley ratio of BN⁻ and BO⁻ of a sample with delta-doped boron multilayers, the appropriate Bi⁺/Cs⁺ condition for a high depth resolution was determined for each energy level of the sputtering beam. Upon verification of the etching methods to thin the SiO₂ layer, slight discrepancies were found between samples that were obtained with different etching methods. The difference in the roughness values of the etched surfaces was proactively utilized for the performance confirmation of the low-energy sputtering beam by means of precise observation of the profiles at the SiO₂/SiC interface. The use of a Cs beam with a low energy between 0.25 and 0.5 keV enabled the detection of slight discrepancies in the roughness of less than 1 nm between samples. The aforementioned method has the potential to accurately detect discrepancies in the intrinsic distribution at the SiO₂/SiC interface among samples.     

Ultrashallow depth profiling using SIMS and ion scattering spectroscopy

The accuracy of ultrashallow depth profiling was studied by secondary ion mass spectrometry (SIMS) and high‐resolution Rutherford backscattering spectroscopy (HRBS) to obtain reliable depth profiles of ultrathin gate dielectrics and ultrashallow dopant profiles, and to provide important information for the modeling and process control of advanced complimentary metal‐oxide semiconductor (CMOS) design. An ultrathin Si₃N₄/SiO₂ stacked layer (2.5 nm) and ultrashallow arsenic implantation distributions (3 keV, 1 × 10¹⁵ cm^?2) were used to explore the accuracy of near‐surface depth profiles measured by low‐energy O₂⁺ and Cs⁺ bombardment (0.25 and 0.5 keV) at oblique incidence. The SIMS depth profiles were compared with those by HRBS. Comparison between HRBS and SIMS nitrogen profiles in the stacked layer suggested that SIMS depth profiling with O₂⁺ at low energy (0.25 keV) and an impact angle of 78° provides accurate profiles. For the As⁺‐implanted Si, the HRBS depth profiles clearly showed redistribution in the near‐surface region. In contrast, those by the conventional SIMS measurement using Cs⁺ primary ions at oblique incidence were distorted at depths less than 5 nm. The distortion resulted from a long transient caused by the native oxide. To reduce the transient behavior and to obtain more accurate depth profiles in the near‐surface region, the use of O₂⁺ primary ions was found to be effective, and 0.25 keV O₂⁺ at normal incidence provided a more reliable result than Cs⁺ in the near‐surface region. Copyright © 2007 John Wiley & Sons, Ltd.     

Mass spectral analysis and imaging of tissue by ToF-SIMS—The role of buckminsterfullerene, C60, primary ions

Recent developments in desorption/ionisation mass spectrometry techniques have made their application to biological analysis a realistic and successful proposition. Developments in primary ion source technology, mainly through the advent of polyatomic ion beams, have meant that the technique of secondary ion mass spectrometry (SIMS) can now access the depths of information required to allow biological imaging to be a viable option.Here the role of the primary ion C₆₀⁺ is assessed with regard to molecular imaging of lipids and pharmaceuticals within tissue sections. High secondary ion yields and low surface damage accumulation are demonstrated on both model and real biological samples, indicating the high secondary ion efficiency afforded to the analyst by this primary ion when compared to other cluster ion beams used in imaging. The newly developed 40 keV C₆₀⁺ ion source allows the beam to be focused such that high resolution imaging is demonstrated on a tissue sample, and the greater yields allow the molecular signal from the drug raclopride to be imaged within tissue section following in vivo dosing.The localisation shown for this drug alludes to issues regarding the chemical environment affecting the ionisation probability of the molecule; the importance of this effect is demonstrated with model systems and the possibility of using laser post-ionisation as a method for reducing this consequence of bio-sample complexity is demonstrated and discussed.     

Fast atom bombardment mass spectra of [(diars)Fe(CO)2(C(O)Me)(P-donor)]+ BF4− salts

Characteristic fast atom bombardment (FAB) mass spectra (8 keV, argon, glycerol matrix) have been obtained for an isostructural series of organometallic cations of the form cis,trans[(diars)Fe(CO)₂(C(O)Me)L]⁺ Bf₄ (L = phosphorus donor). The fast atom bombardment mass spectra (FABMS) obtained show relatively abundant fragments corresponding to the cationic portion of the complex [C⁺]. Extensive fragmentation also occurs via successive CO loss, phosphorus donor ligand cleavage, and ligand decomposition. Evidence for a rearrangement fragmentation corresponding to the process [Fe(C(O)Me)]⁺ → [FeMe]⁺ + CO is presented.     

Optical response of cesium coated C60

Photoabsorption spectra are reported for Cs _n ⁺ and C₆₀Cs_n ⁺ + clusters for n=40, 60, 120 and 310. The spectra were obtained by heating the mass selected clusters in a beam by means of photoabsorption until they evaporated metal atoms. The resulting mass loss was observed in a time-of-flight mass spectometer. The plasmon-like resonance in pure Cs clusters shifts to lower energies with decreasing cluster size. The collective electronic excitations in clusters containing C₆₀ are split in energy as would be expected for fullerene molecules coated with layers of metal.     

Degradation of poly(acrylates) under SF5+ primary ion bombardment studied using time‐of‐flight secondary ion mass spectrometry. 3. Poly(hydroxyethyl methacrylate) with chemical derivatization

Molecular depth profiling of polymers by secondary ion mass spectrometry (SIMS) has focused on the use of polyatomic primary ions due to their low penetration depth and high damage removal rates in some polymers. This study is the third in a series of systematic characterizations of the effect of polymer chemistry on degradation under polyatomic primary ion bombardment. In this study, time‐of‐flight SIMS (ToF‐SIMS) was used to assess 5 keV SF₅⁺‐induced damage of ～90 nm thick spin‐cast poly(2‐hydroxyethyl methacrylate) (PHEMA) and ～130 nm thick trifluoroacetic anhydride‐derivatized PHEMA (TFAA‐PHEMA) films. The degradation of these polymers under extended SF₅⁺ bombardment (～2 × 10¹⁴ ions cm^?2) was compared to determine the effect of the pendant group chemistry on their degradation. The sputter rate and ion‐induced damage accumulation rate of PHEMA were similar to a poly(n‐alkyl methacrylate) of similar pendant group length, suggesting that the addition of a terminal hydroxyl group to the alkyl pendant group does not markedly change the stability of poly(n‐alkyl methacrylates) under SF₅⁺ bombardment. The sputter rate and ion‐induced damage accumulation rate of TFAA‐PHEMA were much higher than a poly(n‐alkyl methacrylate) of similar pendant group length, suggesting that derivatization of the terminal hydroxyl group can significantly reduce degradation of the polymer under SF₅⁺ bombardment. This result is in good agreement with the literature on the thermal and radiation‐induced degradation of fluorinated poly(alkyl methacrylates), which suggests that the electron‐withdrawing fluorinated pendant group increases the probability of depolymerization. Copyright © 2004 John Wiley & Sons, Ltd.     

Extraction and DFT study on the complexation of the cesium cation with a hexaarylbenzene-based receptor

From extraction experiments and γ-activity measurements, the extraction constant corresponding to the equilibrium Cs⁺(aq) + A⁻(aq) + 1(nb) ⇆ 1·Cs⁺(nb) + A⁻ (nb) taking part in the two-phase water–nitrobenzene system (A⁻ = picrate, 1 = hexaarylbenzene-based receptor; aq = aqueous phase, nb = nitrobenzene phase) was evaluated as log K _ex (1·Cs⁺, A⁻) = 2.8 ± 0.1. Further, the stability constant of the hexaarylbenzene-based receptor·Cs⁺ complex (abbrev. 1·Cs⁺) in nitrobenzene saturated with water was calculated for a temperature of 25 °C: log β _nb (1·Cs⁺) = 4.7 ± 0.1. By using quantum mechanical DFT calculations, the most probable structure of the 1·Cs⁺ complex species was solved. In this complex having C ₃ symmetry, the cation Cs⁺ synergistically interacts with the polar ethereal oxygen fence and with the central hydrophobic benzene bottom via cation–π interaction. Finally, the calculated binding energy of the resulting complex 1·Cs⁺ is −220.0 kJ/mol, confirming relatively high stability of the considered cationic complex species.     

Degradation of poly(acrylates) under SF5+ primary ion bombardment studied using time‐of‐flight secondary ion mass spectrometry. 1. Effect of main chain and pendant methyl groups

Polyatomic primary ions have been applied recently to the depth profiling of organic materials by secondary ion mass spectrometry (SIMS). Polyatomic primary ions offer low penetration depth and high damage removal rates in some polymers, but the relationship between polymer chemistry and degradation under polyatomic primary ion bombardment has not been studied systematically. In this study, positive and negative ion time‐of‐flight SIMS (ToF‐SIMS) was used to measure the damage of ～100 nm thick spin‐cast poly(methyl methacrylate) (PMMA), poly(methyl acrylate) (PMA) and poly(methacrylic acid) (PMAA), films under extended (～2 × 10¹⁴ ions cm^?2) 5 keV SF₅⁺ bombardment. These polymers were compared to determine the effect of the main chain and pendant methyl groups on their degradation under SF₅⁺ bombardment. The sputter rate of PMMA was approximately twice that of PMA or PMAA and the rate of damage accumulation was higher for PMA and PMAA than PMMA, suggesting that the main chain and pendant methyl groups played an important role in the degradation of these polymers under SF₅⁺ bombardment. These results are consistent with the literature on the thermal and radiation‐induced degradation of these polymers, which show that removal of the main chain or pendant methyl groups reduces the rate of depolymerization and increases the rate of intra‐ or intermolecular cross‐linking. Copyright © 2004 John Wiley & Sons, Ltd.     

Characterization of the fluxes of neutral and positively charged clusters (Agn and Agn+; n≤4) produced by argon ion sputtering of silver

The emission of neutral and positively charged silver clusters during sputtering of a polycrystalline silver target by 5 keV Ar⁺ ion bombardment has been studied and the sputter ejected silver flux has been characterized. As a result, the silver flux is found to be strongly dominated byneutral clusters rather than cluster ions. The contribution of neutral clusters in the overall silver flux decreases rapidly and monotonically with increasing cluster size n and decreases, in addition, with decreasing bombarding energy. The well known alternation of the secondary ion intensities of Ag _n ⁺ as a function of cluster size (higher intensities for odd n) is found to be correlated with the effective ionization potentials of the corresponding sputtered neutral clusters.     

Individual extraction constants of some organic cations in the two-phase water–nitrobenzene system

From extraction experiments and γ-activity measurements, the exchange extraction constants corresponding to the general equilibrium C⁺(aq) + Cs⁺(nb) ⇔ C⁺(nb) + Cs⁺(aq) taking part in the two-phase water–nitrobenzene system (C⁺ = organic cation; aq = aqueous phase, nb = nitrobenzene phase) were evaluated. Furthermore, the individual extraction constants of 15 organic cations in the mentioned two-phase system were calculated.     

Degradation of poly(acrylates) under SF5+ primary ion bombardment studied using time‐of‐flight secondary ion mass spectrometry. 2. Poly(n‐alkyl methacrylates)

Polyatomic primary ions offer low penetration depth and high damage removal rates in some polymers, facilitating their use in the molecular depth profiling of these polymers by secondary ion mass spectrometry (SIMS). This study is the second in a series of systematic characterizations of the effect of polymer chemistry on degradation under polyatomic primary ion bombardment. In this study, time‐of‐flight SIMS (ToF‐SIMS) was used to measure the damage of ～90 nm thick spin‐cast poly(methyl methacrylate), poly(n‐butyl methacrylate), poly(n‐octyl methacrylate) and poly(n‐dodecyl methacrylate) films under extended (～2 × 10¹⁴ ions cm^?2) 5 keV SF₅⁺ bombardment. The degradation of the poly(n‐alkyl methacrylates) were compared to determine the effect of the length of the alkyl pendant group on their degradation under SF₅⁺ bombardment. The sputter rate and stability of the characteristic secondary ion intensities of these polymers decreased linearly with alkyl pendant group length, suggesting that lengthening the n‐alkyl pendant group resulted in increased loss of the alkyl pendant groups and intra‐ or intermolecular cross‐linking under SF₅⁺ bombardment. These results are partially at variance with the literature on the thermal degradation of these polymers, which suggested that these polymers degrade primarily via depolymerization with minimal intra‐ or intermolecular cross‐linking. Copyright © 2004 John Wiley & Sons, Ltd.     

Fast atom bombardment mass spectra of telluronium salts

The fast atom bombardment (FAB) mass spectra of telluronium salts were studied. The spectra exhibit the intact cation (C⁺) and cluster ions ([M + C]⁺). The principal fragment ions in the FAB mass spectra of telluronium salts are [RTe]⁺, [R₂Te]⁺˙, [R₂Te − H]⁺, [RTeR′]⁺˙, and [RTeR′ + H]⁺. When the anion was [BPh₄]⁻, interesting cluster ions such as [M + C − BPh₃]⁺ appeared.