Infrared properties of AsχTe1−χ glasses

Infrared reflection and transmission measurements in As_χTe_1?χ glasses (45?×?55) show well-defined Gaussian vibrational absorption peaks. Comparisons with spectra observed in crystalline and glassy As₂S₃ and As₂Se₃ indicate that the local order in As_χTe_1?χ glasses is not like that found in crystalline As₂Te₃, but rather it consists primarily of AsTe₃ pyramids which are probably linked together in a fashion similar to that found in As₂S₃ and As₂Se₃.     

Multiphonon absorption in As2S3As2Se3 glasses

Multiphonon absorption in As₂S₃ and As₂Se₃ glasses is well explained by a molecular model in terms of combination bands of high frequency vibrational modes of pyramidal AsY₃ and bent AsYAs groups (Y = SorSe). Multiphonon absorption coefficients in mixed As₂S₃As₂Se₃ glasses are nearly additive in terms of the pure components, suggesting a high degree of non-random mixing.     

Optical limiting in fullerenes, colloidal metal solutions, and semiconductors in the field of pico-and nanosecond pulses of an Nd:YAG laser

Optical limiting of pico-and nanosecond pulsed radiation of a Nd:YAG laser (λ=1064 and 532 nm) is studied in solutions of fullerenes (C₆₀ and C₇₀), semiconductor crystals and films (GaAs, As₂S₃, As₂₀S₈₀, 2As₂S₃/As₂Se₃, and 3As₂S₃/As₂Se₃), and colloidal solutions of metals (Au, Ag, Pt, and Cu). The effect of the particle aggregation in silver solutions on the optical limiting is considered. Optical limiting mechanisms, specifically, reverse saturable absorption, two-photon absorption, and self-action effects, are discussed. Nonlinear absorption coefficients of the studied materials are measured.     

硫系非晶半导体薄膜中的超快光 Kerr效应

利用飞秒激光超外差光Kerr(OHD-OKE)技术研究了As₂S₃, As₂Se₃, GeS₂, GeSe₂, Ge₂₀As₂₅S₅₅, Ge₂₀As₂₅Se₅₅, Ge₁₀As₄₀S_{20关键词： 全光开关 硫系非晶半导体薄膜 飞秒激光超外差光Kerr(OHD-OKE) 三阶非线性}     

Effect of nonlinear refraction and two-photon absorption on the optical limiting in amorphous chalcogenide films

This paper reports on the results of investigations into the nonlinear optical characteristics of chalcogenide films (As₂S₃, As₂₀S₈₀, 2As₂S₃/As₂Se₃, 3As₂S₃/As₂Se₃). The nonlinear refractive indices and two-photon absorption coefficients for these films are measured using the Z-scan technique at wavelengths of a picosecond Nd: YAG laser (λ=1064 and 532 nm). The optical limiting due to Kerr-type nonlinearities is analyzed.     

Study of As-Sb-Se chalcogenide glasses by NQR and EPR spectroscopy methods

In this paper experimental results obtained by both ⁷⁵As NQR and EPR spectroscopy are presented for the three-component system As-Sb-Se. The ⁷⁵As NQR spectra of glasses of structures (As₂Se₃)_0.78 (Sb₂Se₃)_0.22, (As₂Se₃)_0.75 (Sb₂Se₃)_0.25, (As₂Se₃)_0.5 (Sb₂Se₃)_0.5 have broad lines with two Sb-NQR lines (corresponding to the Sb₂Se₃ units) and two ⁷⁵As-NQR lines (corresponding to the As₂Se₃ units). Differences in the EPR spectra of the different glasses arise because of the different amounts of arsenic and antimony in their structure.     

ESR in X-irradiated As2O3 glass

X-irradiation of glassy As₂O₃ at 77K or 300K produces an unusually large density (～5×10¹⁸ cm^-3) of paramagnetic centers which are stable at 300K. The average spin-Hamiltonian parameters (g = 1.998, g_⊥ = 1.984, A₆ = 243G, A_⊥ = 114G) indicate that these centers are analogous to those previously observed in As₂Se₃ and As₂S₃ glasses and that they consist of unpaired electrons localized on a non-bonding 4p orbital of an As atom. Unlike the results obtained for As₂Se₃ and As₂S₃, the concommitant holes in As₂O₃ are trapped on Fe²⁺ impurity sites which become Fe³⁺ and not on non-bonding oxygen p orbitals. The radiation induced ESR is also accompanied by a stable optical absorption tail which lies within the band gap and increases exponentially with energy. This absorption can be partially bleached with the application of sub-band-gap light.     

Specific features of linear and nonlinear optical responses of chalcogenide glasses in the As-S-Se and As-Se-Te systems

Transmission and reflection spectra of samples of chalcogenide glasses in the As-S-Se and As-Se-Te systems have been measured in the wavelength range of 0.4–2.5 μm. Spectral dependences of the single-photon absorption coefficient and refractive index are obtained, the parameters characterizing the fundamental absorption edge are determined, and the Kerr constant in the low-frequency limit is calculated. Based on the obtained results and the data in the literature, dispersion curves are plotted for the Kerr constants of As₂S₃ and As₂Se₃ glasses near the absorption edge.     

Effect of replacement of Se by S on structural and physical properties of Ge–Sb–As–Se–S chalcogenide glasses

In the present study, the structural and opto-mechanical properties of Ge–Sb–As–Se–S chalcogenide glasses have been investigated. For this purpose, different bulk glasses of Ge₂₀Sb₅As₁₅Se_60?xS_x (0 ≤ x≤50) were prepared by conventional melt quenching technique in quartz ampoule and different characteristics of prepared glasses such as glass transition temperature, density, hardness, transmittance, optical band gap energy and refractive index were determined. The value of hardness and glass transition temperature of prepared glasses were found to increase with increasing the sulfur content as a result of formation of GeS₄ tetrahedral units and increasing the network connectivity and average bonding energy. The optical energy gap (according to Tauc’s relation), transmittance and refractive index of prepared glasses are in direct relation with sulfur content. In this study, the highest value of transmittance (about 70%) and lowest value of refractive index (2–2.3) was achieved in Ge₂₀Sb₅As₁₅Se₄₀S₂₀ and Ge₂₀Sb₅As₁₅Se₁₀S₅₀ glasses, respectively.     

Anomalous X-ray scattering studies on superionic glassy (As2Se3)-(AgX) systems (X = halides)

Anomalous X-ray scattering experiments for glassy room-temperature superionic conductors (As₂Se₃)_0.4 (AgI)_0.6 and (As₂Se₃)_0.4(AgBr)_0.6 were performed close to the As, Se, Ag, and Br K edges using a third-generation synchrotron radiation facility, ESRF. The differential structure factors, Δ_iS(Q), were obtained from detailed analyses, indicating that Δ_AsS(Q) and Δ_SeS(Q) of both the glassy superionic semiconductors are similar to those of glassy As₂ Se₃ except the prepeak in Δ_SeS(Q). The Δ_AgS(Q) spectrum of (As₂Se₃)_0.4 (AgI)_0.6 looks molten salt-like. However, the Δ_Ag S(Q) of (As₂Se₃)_0.4(AgBr)_0.6 glass have quite different features from that of (As₂Se₃)_0.4 (AgI)_0.6 glass in the low Q range, and the Δ_BrS(Q) has even a pre-shoulder around 13 nm^? 1 unlike molten salts. In the differential pair distribution functions Δ_ig(r) obtained from the Fourier transforms of Δ_iS(Q), the first peaks of Δ_Asg(r) and Δ_Seg(r) show no correlation with those of Δ_Agg(r) and Δ_Brg(r), and vice versa. From these results, it can be concluded that a pseudo-binary mixture of the As₂Se₃ network matrix and AgX-related ionic conduction pathways is a good structural model for these superionic glasses. Differences between the AgBr- and AgI mixtures were found in the second-neighbor structures around the Ag atoms, which may reflect those in the crystal structures of the AgX salts.     

Thickness distribution of thin amorphous chalcogenide films prepared by pulsed laser deposition

Amorphous chalcogenide thin films were prepared from As₂Se₃, As₃Se₂ and InSe bulk glasses by pulsed laser deposition using a KrF excimer laser. Thickness profiles of the films were determined using variable angle spectroscopic ellipsometry. The influence of the laser beam scanning process during the deposition on the thickness distribution of the prepared thin films was evaluated and the corresponding equations suggested. The results were compared with experimental data.     

Kinetics of photo‐darkening and self‐bleaching in amorphous As2S3 and As2Se3 thin films

The kinetics of photo‐darkening of amorphous As₂S₃ and a‐As₂Se₃ thin films follows a single exponential, but the magnitude and the rate of the process is higher in case of As₂S₃. The kinetics of self‐bleaching (dark relaxation) in advance photo‐darkened state follows a stretched exponential (SRE) with different stretching parameter for a‐As₂S₃ and a‐As₂Se₃. Within the J. C. Phillips approach we suppose that photo‐darkening in amorphous As₂S₃ films is, to some extent, accompanied by changes in short‐range order interactions, while photo‐darkening of amorphous As₂Se₃ is accompanied rather by changes in Coulomb interactions. The self‐bleaching process reduced the magnitude of photo‐darkening up to 45% and 60% for amorphous As₂S₃ and As₂Se₃ films, respectively. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Photoelectron spectra of As4S3, P4S3, P4Se3 and As4O6

The He(I) UV photoelectron spectra of As₄S₃, P₄S₃, P₄Se₃ and As₄O₆ are reported in this paper. The spectra of As₄S₃ and the isostructural molecules P₄S₃ and P₄Se₃ comprise seven broad but clearly defined peaks, whilst the spectrum of As₄O₆ consists of six peaks and two shoulders. By comparing the spectra with one another and with the photoelectron spectra of other arsenic and phosphorus compounds, the character and symmetry species of the highest-energy occupied molecular orbitals of the molecules have been assigned.     

Photoinduced phenomena in mAs2S3·nAs2Se3 amorphous films and their application in micro-optics technology

Photoinduced phenomena, such as photodarkening, photorefraction, and photodissolution, were studied in different compositions of three-component mAs₂S₃·nAs₂Se₃ amorphous films. The main emphasis was on the effect of photoinduced change of dissolution rate since this effect is the basis of many applications of amorphous chalcogenide films. The results of the investigation were compared with photoinduced effects in binary As₂S₃ and As₂Se₃ films. Advanced micro-optical devices: micro-lens and micro-mirror arrays, diffractive gratings, and photonic bandgap crystals, based on three-component amorphous films which possessed optimal photodissolution characteristics were developed. The primary parameters of the micro-optical devices developed are discussed.     

A holographic recording medium based on a chalcogenide glassy semiconductor and tungsten oxide

The diffraction efficiency of a film system (As₂S₃)_0.3(As₂Se₃)_0.7-WO₂ is studied.     

Raman spectra and structure of As40−xS60Ix glasses

The Raman spectra of bulk As_40?xS₆₀I_x glasses with 0?x?20 have been studied. The obtained spectra can be successfully explained assuming the structure of these glasses to be composed of As₂S_3.45 polymer network matrix with dissolved AsBr₃ and S₈ molecules.     

Small angle X-ray scattering evidence for the absence of voids in chalcogenide glasses

Small angle X-ray scattering measurements show no evidence for the presence of voids in chalcogenide glasses, in contrast to the situation found in deposited films of Ge and Si. This result and the observation of a diffraction peak near $\text{k = 1.2}\text{A}\text{?}{}^{\mathrm{?1}}$ are found to be consistent with the existence of a layer structure in glassy As₂S₃ and As₂Se₃.     

Urbach tails and the structure of chalcogenide glasses

A novel analysis of optical absorption tails of inorganic network glasses is shown to provide important information on the structure of the glass. The anomalous composition and temperature dependence of absorption tails in Ge_xSe_1?x and As_xSe_1?x systems indicate that these glasses retain locally layered structures at particular stoichiometries corresponding to GeSe₂ and As₂Se₃, and a reversible structural change is taking place well below the glass transition temperature. A phenomenological model for the absorption tail slope of glasses is proposed, analogous to the Urbach rule for crystalline materials.     

A.C. conductivity of bulk glassy chalcogenides

The a.c. conductivity of amorphous Se, Se₉₀Ge₁₀, Se₇₅Ge₂₅, As₂Se₃, As₂S₃, and As₄₅Te₄₀Ge₁₅ has been measured at room temperature in the 20 MHz–35 GHz range. The results display a contact effect we explicit. For the six materials, the conductivity is roughly proportional to ω^s with $\text{s}{}^{\mathrm{\approx }}\text{1}$ up to the microwave region (no saturation is observed). The experimental results are analysed with regard to the electronic and the atomic contributions but a better estimate of some parameters is necessary to confirm any model.     

Reversible photo-induced volume changes in evaporated As2S3 and As4Se5Ge1 films

Reversible photo-induced volume changes have been observed accompanying reversible optical absorption edge shift produced by successive cycles of band gap illumination and annealing for well-annealed evaporated As₂S₃ and As₄Se₅Ge₁ films. The As₂S₃ film shows an increase in its volume by illumination, while As₄Se₅Ge₁ film shows a decrease. Qualitative discussion has been given in connection with pressure-induced optical constant change.