In situ characterization of optoelectronic nanostructures and nanodevices

One-dimensional (1-D) semiconductor nanostructures can effectively transport electrons and photons, and are considered to be promising building blocks for future optoelectronic nanodevices. In this review, we present our recent efforts to integrate optical techniques and in situ electron microscopy for comprehensively characterizing individual 1-D optoelectronic nanostructures and nanodevices. The technical strategies and their applications in “green” emission and optical confinement in 1-D ZnO nanostructures will be introduced. We also show in situ assembly and characterization of nanostructures for optoelectronic device purposes. Using these examples, we demonstrate that the combination of optical techniques and in situ electron microscopy can be powerful for the studies of optoelectronic nanomaterials and nanodevices.     

In situ characterization of optoelectronic nanostructures and nanodevices

One-dimensional (1-D) semiconductor nanostructures can effectively transport electrons and photons, and are considered to be promising building blocks for future optoelectronic nanodevices. In this review, we present our recent efforts to integrate optical techniques and in situ electron microscopy for comprehensively characterizing individual 1-D optoelectronic nanostructures and nanodevices. The technical strategies and their applications in “green” emission and optical confinement in 1-D ZnO nanostructures will be introduced. We also show in situ assembly and characterization of nanostructures for optoelectronic device purposes. Using these examples, we demonstrate that the combination of optical techniques and in situ electron microscopy can be powerful for the studies of optoelectronic nanomaterials and nanodevices.     

<Emphasis Type="Italic">In situ</Emphasis> characterization of optoelectronic nanostructures and nanodevices

One-dimensional (1-D) semiconductor nanostructures can effectively transport electrons and photons, and are considered to be promising building blocks for future optoelectronic nanodevices. In this review, we present our recent efforts to integrate optical techniques and in situ electron microscopy for comprehensively characterizing individual 1-D optoelectronic nanostructures and nanodevices. The technical strategies and their applications in “green” emission and optical confinement in 1-D ZnO nanostructures will be introduced. We also show in situ assembly and characterization of nanostructures for optoelectronic device purposes. Using these examples, we demonstrate that the combination of optical techniques and in situ electron microscopy can be powerful for the studies of optoelectronic nanomaterials and nanodevices.     

Spin-dependent tunneling in nanostructures consisting of magnetic barriers

We study the spin-dependent transport properties of the nanostructures consisting of realistic magnetic barriers produced by the deposition of ferromagnetic stripes on heterostructures. It is shown that, only in the nanostructures with symmetric magnetic field with respect to the magnetic-modulation direction, electrons exhibit a considerable spin-polarization. It is also shown that the degree of the electron spin polarization is greatly dependent on the ferromagnetic stripe and its position relative to the 2DEG. A much larger electron-spin polarization can be obtained by properly fabricating the ferromagnetic stripe and by adjusting its distance above the 2DEG. Received 27 December 2001 and Received in final form 13 March 2002 Published online 25 June 2002     

Electrical spin polarization through spin-momentum locking in topological-insulator nanostructures

Recently, spin-momentum-locked topological surface states(SSs) have attracted significant attention in spintronics.Owing to spin-momentum locking, the direction of the spin is locked at right angles with respect to the carrier momentum.In this paper, we briefly review the exotic transport properties induced by topological SSs in topological-insulator(TI)nanostructures, which have larger surface-to-volume ratios than those of bulk TI materials. We discuss the electrical spin generation in TIs and its effect on the transport properties. A current flow can generate a pure in-plane spin polarization on the surface, leading to a current-direction-dependent magnetoresistance in spin valve devices based on TI nanostructures.A relative momentum shift of two coupled topological SSs also generates net spin polarization and induces an in-plane anisotropic negative magnetoresistance. Therefore, the spin-momentum locking can enable the broad tuning of the spin transport properties of topological devices for spintronic applications.     

Distinguishing quantum and classical transport through nanostructures

We consider the question of how to distinguish quantum from classical transport through nanostructures. To address this issue we have derived two inequalities for temporal correlations in nonequilibrium transport in nanostructures weakly coupled to leads. The first inequality concerns local charge measurements and is of general validity; the second concerns the current flow through the device and is relevant for double quantum dots. Violation of either of these inequalities indicates that physics beyond that of a classical Markovian model is occurring in the nanostructure.     

Nanoscale structures of circle - MgCl2 constructed by plasmid DNA templates

Circular nanoscale structures of inorganic salt, MgCl₂, are constructed by extended plasmid DNA pBR322 as a template on mica substrates, and these nanosized structures of 6.2±1.3 to 8.2±1.8 nm in height, and 1.35±0.18 to 2.93±0.25 μm in length are investigated by atomic force microscopy (AFM). The chemical element components of these nanostructures are characterized by XPS. We also discuss a possible formation mechanism of these circle nanostructures.     

表面低配位原子对声子的散射机制

由于纳米结构具有极高的表体比,声子-表面散射机制对声子的热输运性质起到关键作用.提出了表面低配位原子对声子的散射机制,并且结合量子微扰理论与键序理论推导出该机制的散射率.由于散射率正比于材料的表体比,这种散射机制对声子输运的重要性随着纳米结构尺寸的减小而增大.散射率正比于声子频率的4次方,所以这种散射机制对高频声子的作用远远强于对低频声子的作用.基于声子玻尔兹曼输运方程,计算了硅纳米薄膜和硅纳米线的热导率,发现本文模型比传统的声子-边界散射模型更接近实验值.此发现不仅有助于理解声子-表面散射的物理机制,也有助于应用声子表面工程调控纳米结构的热输运性质.     

低维纳米材料量子热输运与自旋热电性质 ——非平衡格林函数方法的应用

低维材料不断涌现的新奇性质吸引着科学研究者的目光. 除了电子的量子输运行为之外, 人们也陆续发现和确认了热输运中显著的量子行为, 如 热导低温量子化、声子子带、尺寸效应、瓶颈效应等. 这些小尺度体系的热输运性质可以很好地用非平衡格林函数来描述. 本文首先介绍了量子热输运的特性、声子非平衡格林函数方法及其在低维纳米材料中的研究进展; 其次回顾了近年来在 一系列低维材料中发现的热-自旋输运现象. 这些自旋热学现象展现了全新的热电转换机制, 有助于设计新型的热电转换器件, 同时也给出了用热产生自旋流的新途径; 最后介绍了线性响应理论以及在此理论框架下结合声子、电子非平衡格林函数方法进行的一些有益的探索. 量子热输运的研究对热效应基础研究以及声子学器件、能量转换器件的发展有着不可替代的重要作用.     

Influence of surface scattering on the thermal properties of spatially confined GaN nanofilm

Gallium nitride(GaN), the notable representative of third generation semiconductors, has been widely applied to optoelectronic and microelectronic devices due to its excellent physical and chemical properties. In this paper, we investigate the surface scattering effect on the thermal properties of GaN nanofilms. The contribution of surface scattering to phonon transport is involved in solving a Boltzmann transport equation(BTE). The confined phonon properties of GaN nanofilms are calculated based on the elastic model. The theoretical results show that the surface scattering effect can modify the cross-plane phonon thermal conductivity of GaN nanostructures completely, resulting in the significant change of size effect on the conductivity in GaN nanofilm. Compared with the quantum confinement effect, the surface scattering leads to the order-of-magnitude reduction of the cross-plane thermal conductivity in GaN nanofilm. This work could be helpful for controlling the thermal properties of Ga N nanostructures in nanoelectronic devices through surface engineering.     

Study of higher-energy core states in CdSe/CdS octapod nanocrystals by ultrafast spectroscopy

We present a study of the intermediate energy transitions in octapod CdSe/CdS nanocrystals accomplished by ultrafast pump probe spectroscopy (150 fs resolution) combined with effective mass calculations. The bleaching features revealed in the differential transmission spectrum indicate that intermediate transitions occur from higher-energy hole states confined in the core, to the few electron states mildly localized in the core by the weak geometrical confinement. The detection of bleaching features of the intermediate states at long time implies that electron-hole recombination is inhibited in these structures, meanwhile electrons are available for further transport along the nanostructures. This information indicates that such nanostructures could be promising for photovoltaic applications.     

Characteristic Topological and Energy Features of the Positioning and Transport Potentials in Nanosystems

Topological and energy specifics of interparticle potentials in the computer modeling of block confinement, positioning, and transport processes inside low-dimensional nanosystems are considered. It is shown that inter- and intrablock bonds in nanostructures can be determined in the context of the theory of quantum topology of electron density and the method of electron density functional. The results of calculations of interatomic transport potentials inside the carbon, silicon, and aluminum nanoblocks are presented. It is shown that the C–C potentials in nanostructures have an activation barrier. As a consequence, the transportable C atoms are unique in forming low-dimensional nanostructures. The equilibrium parameters in Al and Si nanosystems differ only insignificantly from the corresponding equilibrium crystal parameters. The results of computer modeling of the effect of strong electron correlation on the metal-insulator conversion in the transport system electron-nanotube are analyzed.     

Electronic properties of organic monolayers and molecular devices

We review some of our recent experimental results on charge transport in organic nanostructures such as self-assembled monolayer and monolayers of organic semiconductors. We describe a molecular rectifying junction made from a sequential self-assembly on silicon. These devices exhibit a marked current-voltage rectification behavior due to resonant transport between the Si conduction band and the π molecule highest occupied molecular orbital of the π molecule. We discuss the role of metal Fermi level pinning in the current-voltage behavior of these molecular junctions. We also discuss some recent insights on the inelastic electron tunneling behavior of Si/alkyl chain/metal junctions.     

A novel humidity sensor based on NH2-MIL-125(Ti) metal organic framework with high responsiveness

Noble metal nanostructures with branched morphologies [i.e., 3-D Pt nanoflowers (NFs)] by tri-dimensionally integrating onto conductive carbon materials are proved to be an efficient and durable electrocatalysts for methanol oxidation. The well-supported 3-D Pt NFs are readily achieved by an efficient cobalt-induced/carbon-mediated galvanic reaction approach. Due to the favorable nanostructures (3-D Pt configuration allowing a facile mass transfer) and supporting effects (including framework stabilization, spatially separate feature, and improved charge transport effects), these 3-D Pt NFs manifest much higher electrocatalytic activity and stability toward methanol oxidation than that of the commercial Pt/C and Pt-based electrocatalysts.     

Nanostructuring by Energetic Ion Beams

Development of nanostructured materials has become of wide interest due to their exotic properties and interesting physics aspects. Energetic ions play a crucial role in the development of nano materials. Ions of different energy regimes have different roles in growth of nano particles. Low energy ions (typically up to a (kiloelectronvolt) keV) in plasma, have been in use for growth of nano particle thin films. Low energy ions (typically a few hundred (kiloelectronvolt) keV) from ion implanters are used for growth of nano particles in a matrix. High energy heavy ions (swift heavy ions) have been in use in recent years for growth of nanostructures and also for modifying nanostructures. Highly charged slow moving ions and focused ion beams too, have potential for creating nanostructures. Out of these several possible roles of energetic ions, there have been developments at NSC Delhi in growth of nanostructures by RF plasma, low energy ions and swift heavy.     

Effect of substrate temperature on the growth and luminescence properties of ZnO nanostructures

ZnO nanowires, nanorods and nanoribbons have been prepared by heating a mixture of ZnO/graphite powders using the thermal evaporation and vapor transport on Si(1 0 0) substrates without any catalyst. The nanostructures are grown as a function of substrate temperature ranging from 900 to 1300 K. These nanostructures are of the size 100–300 nm in diameter or width and several tens of micrometers in length. We studied the influence of the substrate temperature on the luminescent properties of these nanostructures. We observed a strong relationship between the substrate temperature and the green emission band in ZnO, i.e., the photoluminescence study revealed that the green emission peak of the ZnO nanostructures is suppressed relative to the band edge emission when the substrate temperature is decreased from 1300 to 900 K.     

Reversible creation of nanostructures between identical or different species of materials

In this study, accurate nanostructures with various aspect ratios are created on several types of material. This work is highly applicable to the energy, optical, and nano-bio fields, for example. A silicon (Si) nano-mold is preserved using the method described, and target nanostructures are replicated reversibly and unlimitedly to or from various hard and soft materials. It is also verified that various materials can be applied to the substrates. The results confirm that the target nanostructures are successfully created in precise straight line structures and circle structures with various aspect ratios, including extremely high aspect ratios of 1:18. It is suggested that the optimal replicating and demolding process of nanostructures with high aspect ratios, which are the most problematic, could be controlled by means of the surface energy between the functional materials. Relevant numerical and analytical studies are also performed. It is possible to expand the applicability of the nanostructured mold by adopting various backing materials, including rounded substrates. The scope of the applications is extended further by transferring the nanostructures between different species of materials including metallic materials as well as identical species.     

锯齿形石墨烯反点网络加工与输运性质研究

具有特定边界的石墨烯纳米结构在纳电子学、自旋电子学等研究领域表现出良好的应用前景.然而石墨烯加工成纳米结构时,无序的边界不可避免地会降低其载流子迁移率.氢等离子体各向异性刻蚀技术是加工具备完美边界石墨烯微纳结构的一项关键技术,刻蚀后的石墨烯呈现出规则的近原子级平整的锯齿形边界.本文研究了氮化硼上锯齿形边界石墨烯反点网络的磁输运性质,低磁场下可以观测到载流子围绕着一个空位缺陷运动时的公度振荡磁阻峰.随着磁场的增大,朗道能级简并度逐渐增大,载流子的磁输运行为从Shubnikov-de Haas振荡逐渐向量子霍尔效应转变.在零磁场附近可以观测到反点网络周期性空位缺陷的边界散射所导致的弱局域效应.研究结果表明,在氮化硼衬底上利用氢等离子体刻蚀技术加工锯齿形边界石墨烯反点网络,其样品质量会明显提高,这种简单易行的方法为后续高质量石墨烯反点网络的输运研究提供了新思路.     

The role of homophase and heterophase interfaces on transport properties in structured materials

In structured or self-organized materials spatial confinement effects lead to structure- and interface-controlled modifications of the bulk transport properties. In part, such modifications can be accounted for by a classical master equation approach for the transport of the different charge carrier species. The rather large quantity of parameters, which enter such an approach, can more or less easily be adjusted to the dimensional characteristics, local potential changes at interfaces, and the electronic settings of the system as well as to temperature effects. On the other hand, a microscopically more detailed and mostly parameter-free picture is obtained from a quantum-mechanical treatment on the basis of the density-functional theory. An extension by a Green’s function formalism allows the determination and analysis of electronic transport through contacted nanostructures. Examples will be given to demonstrate the applicability of the different approaches for dissipative and hopping transport through a regular array of nanostructures, for a mechanically triggered metal-insulator transition in nanowires, and for the enhanced conductivity at multiferroic domain walls.     

Observation of spontaneous pattern with six-fold symmetry in disk-shaped ZnO complex microstructures

Using a simple vapor phase transport technique, we have fabricated unique complex disk-shaped ZnO microstructures comprising a small disk coaxially grown on a large one and observed spatially perfect six-fold symmetric patterns. The observed results can be explained based on the spontaneous nanoindentation (NI) effect under the geometric constraints and the explanation can be extended to fathom the growth mechanism of other highly symmetrical ZnO nanostructures. Our results indicate that NI not only can elucidate the mechanical properties of surfaces and thin films but also is an effective approach to fabricate ordered nanostructures with high precision on the location of the building blocks. PACS 81.16.Rf; 81.07.-b; 81.05.Dz