强激光照射对2H-SiC晶体电子特性的影响

使用基于密度泛函微扰理论的第一原理赝势法, 计算了纤锌矿结构2H-SiC晶体在强激光照射下的电子特性, 分析了其能带结构和电子态分布. 计算结果表明: 2H-SiC平衡晶格参数a 和c随电子温度T_e的升高逐渐增大; 电子温度在0–2.25 eV范围内时, 2H-SiC仍然是间接带隙的半导体晶体, 当T_e超过2.25 eV达到2.5 eV以上时, 2H-SiC变为直接带隙的半导体晶体; 随着电子温度升高, 导带底和价带顶向高能量或低能量方向发生了移动, 当电子温度T_e大于3.5 eV以后, 价带顶穿越费米能级; 电子温度T_e在0–2.0 eV变化时, 带隙随电子温度升高而增大; T_e在2.0–3.5 eV范围变化时, 带隙随电子温度升高而快速地减少, 表明2H-SiC晶体的金属性随电子温度T_e的继续升高而增强. 在T_e =0, 5.0 eV 处, 计算了2H-SiC晶体总的电子态密度和分波态密度. 电子结构表明T_e =0 eV 时, 2H-SiC 是一个带隙为2.3 eV的半导体; 在T_e =5.0 eV时, 带隙已经消失而呈现出金属特性, 表明当电子温度升高时晶体的共价键变弱、金属键增强, 晶体经历了一个熔化过程, 过渡到金属状态.     

强激光照射对6H-SiC晶体电子特性的影响

使用基于密度泛函微扰理论的第一性原理赝势法, 模拟研究了纤锌矿6H-SiC晶体在强激光照射下电子特性的变化. 研究结果表明, 电子温度T_e在升高到3.89 eV及以上后, 6H-SiC由间接带隙的晶体变为直接带隙的晶体; 带隙值随电子温度T_e升高先是增大后又快速减小, 当电子温度T_e大于4.25 eV以后, 带隙已经消失而呈现出金属特性.     

表面极化子光学声子平均数的磁场和温度依赖性

采用变分法、幺正变换和拉格朗日乘子法,研究了有限温度下纯二维晶体中表面磁极化子的性质.讨论了表面光学声子平均数、磁极化子振动频率λ与磁场B、温度T及Lsgrange乘子u之间的关系.对KCl晶体进行了数值计算,结果表明:磁极化子振动频率、表面光学声子平均数均随磁场B的增强而增加,且随温度T升高而增加.当bgrange乘子u超出慢电子范围时磁极化子振动频率、表面光学声子平均数均随u增加而增大且变化越来越显著.     

极性晶体中表面极化子的温度效应

有不少的极性晶体,电子与体纵光学声子的耦合弱,但与表面光学声予的耦合强.本文讨论电子和体纵光学声子耦合弱,与表面光学声子耦合强时对表面极化子的温度特性的影响,用线性组合算符法研究表面极化子的振动频率、诱生势和有效质量的温度依赖性.对AgBr晶体进行了数值计算,结果表明极化子的振动频率,诱生势和有效质量随温度的升高而减小.     

密度泛函理论研究闪锌矿结构CrTe和VTe半金属铁磁性的稳定性

采用基于密度泛函理论的全势能线性缀加平面波方法对闪锌矿结构CrTe和VTe的电子结构进行自旋极化计算.闪锌矿相CrTe和VTe处于平衡晶格常数时都是半金属性的,它们自旋向下子能带的带隙分别是2.82 eV和2.70 eV,半金属隙分别是0.89 eV和0.33 eV.使晶体相对于平衡晶格在±10%的范围内发生各向同性形变,对闪锌矿相CrTe和VTe的电子结构进行计算,计算结果表明相对于平衡晶格的各向同性形变分别为-6%～10%和-3%～10%时它们仍然具有半金属性质;与此同时,在以上相同的形变范围内闪锌矿相CrTe和VTe的总磁矩分别稳定于4.00μB/formula和3.00μs/formula.在晶体相对于平衡晶格发生各向同性形变分别为-6%～10%和-3%～10%时,闪锌矿相CrTe和VTe能保持半金属铁磁性.     

密度泛函理论研究闪锌矿结构CrTe和VTe半金属铁磁性的稳定性

采用基于密度泛函理论的全势能线性缀加平面波方法对闪锌矿结构CrTe和VTe的电子结构进行自旋极化计算。闪锌矿相CrTe和VTe处于平衡晶格常数时都是半金属性的,它们自旋向下子能带的带隙分别是2.82eV和2.70eV,半金属隙分别是0.89eV和0.33eV. 使晶体相对于平衡晶格在±10%的范围内发生各向同性形变,对闪锌矿相CrTe和VTe的电子结构进行计算,计算结果表明相对于平衡晶格的各向同性形变分别为-6 %~ 10 %和-3 %~10 %时它们仍然具有半金属性质;与此同时,在以上相同的形变范围内闪锌矿相CrTe和VTe的总磁矩分别稳定于4.00 /formula和3.00 /formula. 在晶体相对于平衡晶格发生各向同性形变分别为-6%~10%和-3 %~10 %时,闪锌矿相CrTe和VTe能保持半金属铁磁性。     

量子线中强耦合极化子的温度效应

采用Tokuda改进的线性组合算符法和有效质量下的变分法,研究在抛物势作用下,同时考虑电子与LO声子相互作用时,温度对量子线中强耦合极化子特性的影响。对RbCl晶体所作的数值计算结果表明,量子线中强耦合极化子的基态能量、平均数和光学声子平均数均随温度的升高而增加。     

不同温度下ZnS的高场输运特性

研究了ZnS中的电子声子相互作用.以此为基础,利用Monte Carlo方法研究了ZnS中电子在不同温度下的高场输运特性.电子加速的瞬态时间基本不随温度变化.电子的动能分布函数随温度升高向低能方向移动,即平均动能降低.电子在各能谷间的分布随温度升高而向低能谷移动.电子的漂移速度则随温度升高而降低.给出了这些物理量随温度变化的具体规律. 关键词：     

极性晶体中表面磁极化子的温度依赖性

本文讨论电子和体纵光学声子耦合弱,与表面光学声子耦合强时对表面磁极化子的温度特性的影响,用线性组合算符法研究表面磁极化子的振动频率和诱生势的温度依赖性.对AgCl晶体进行了数值计算.结果表明,极化子的振动频率和诱生势随温度的升高而减小.     

晶格热振动对准二维强耦合极化子有效质量的影响

采用Tokuda改变的线性组合算符法和改进的LLP变分法，研究了晶格热振动对无限势垒量子阱中电子与界面光学声子强耦合、与体纵光学声子弱耦合系统的影响，推导出作为阱宽和温度函数的极化子有效质量的表达式. 尤其得到了量子阱中极化子的振动频率及其随阱宽和温度变化的规律. 对KI/AgCl/KI量子阱进行了数值计算，结果表明，极化子的振动频率和有效质量随阱宽的增加而减小、随温度的升高而减小，但不同支声子与电子相互作用对极化子的振动频率和有效质量的贡献以及它们随阱宽和温度的变化情况大不相同. 关键词： 量子阱 强耦合极化子 振动频率 有效质量 温度依赖性     

Ab initio investigation of photoinduced non-thermal phase transition in β-cristobalite

Using the linear-response method, we investigate the phonon properties of β-cristobalite crystal under electronic excitation effect. We find that the transverse-acoustic phonon frequency becomes imaginary as the electron temperature is increased, which means that the lattice of β-cristobalite becomes unstable under intense laser irradiation. In addition, for the optic phonon mode, the LO(H)–TO(H) splitting disappears when the electronic temperature reaches a certain value,corresponding to the whole transverse-acoustic phonon branches becoming negative. It means that the electronic excitation destroys the macroscopic electric field of β-cristobalite. Based on the calculated phonon band structures, some thermodynamic properties are calculated as a function of temperature at different electronic temperatures. These investigations provide evidence that non-thermal melting takes place during a femtosecond pulse laser interaction with β-cristobalite.     

Photo-induced athermal phase transitions of HgX(X= S,Se,Te) by ab initio study

Ab initio calculations of lattice constants, lattice stabilities of HgX(X = S, Se, Te) at different electronic temperatures(T_e) have been performed within the density functional theory(DFT). We find that the lattice constants of HgX increase and the phonon frequencies reduce as T_e increases. Especially the transverse-acoustic(TA) phonon frequencies of HgX gradually become negative with the elevation of the electron temperature. That is to say ultrafast intense laser induces lattice instabilities of HgX and athermal melting appears for the increase of laser intensity. What is more, with the X atom number increasing, the critical electronic temperatures of HgX are decreased in sequence. This result would be helpful for understanding the athermal melting processes for femtosecond laser micromachining.     

Effect of intense laser irradiation on the lattice stability of semiconductors and metals

The effect of intense ultrashort irradiation on interatomic forces, crystal stability, and possible melting transition of the underlying lattice is not completely elucidated. By using ab initio linear response to compute the phonon spectrum of gold, silicon, and aluminum, we found that silicon and gold behave in opposite ways when increasing radiation intensity: whereas a weakening of the silicon bond induces a lattice instability, gold undergoes a sharp increase of its melting temperature, while a significantly smaller effect is observed for aluminum for electronic temperatures up to 6 eV.     

Enhanced Fröhlich interaction of semiconductor cuprous oxide films determined by temperature‐dependent Raman scattering and spectral transmittance

Anomalous low temperature behaviors in cuprous oxide (Cu₂O) film grown on quartz substrate have been investigated by temperature‐dependent Raman and transmittance spectra. The longitudinal optical components of two Γ₁₅‐ phonon modes become sharper and more intense at a low temperature. It can be found that the highest‐order electronic transition located at 6.4 eV exhibits a minimum transmittance near 200 K. Correspondingly, the variations from phonon intensity ratios reveal obvious anomalies with the decreasing temperature, indicating the existence of strong electron–phonon coupling mediated by Fröhlich interaction in the Cu₂O films below the temperature of 200 K. Copyright © 2012 John Wiley & Sons, Ltd.     

第一性原理研究硫化镉高压相变及其电子结构与弹性性质

采用第一性原理研究了CdS的六方纤锌矿(WZ), 立方闪锌矿(ZB) 和岩盐矿(RS)相在高压条件下的相稳定性、 相变点、电子结构以及弹性性能.WZ相与RS 相可以在相应的压强范围内稳定存在, 而ZB相不能稳定存在.压强大于2.18 GPa时, WZ相向RS相发生金属化相变.WZ相中S原子电负性大于Cd, 且电负性差值小于1.7, CdS的WZ相为共价晶体.高压作用下, S原子半径被强烈压缩, 有效核电荷增加, 对层外电子吸引能力提高, 电负性急剧增大, 导致S与Cd的电负性差值大于1.7, CdS的RS相以离子晶体存在. WZ相的C₄₄随压强增加呈下降趋势, 导致WZ相力学不稳定, 并向RS相转变.当压强大于2.18 GPa时, RS相C₁₁, C₁₂随压强增加而增大, 并且C₄₄保持稳定, 说明RS相具有良好的高压稳定性与力学性能. 关键词： 第一性原理 相变 电子结构 弹性性质     

First principles study of ceramic materials (IVB group carbides) under ultrafast laser irradiation

Group IVB carbides have been applied in extreme aerospace environments as hard ceramic coatings; ZrC is being considered as a replacement for SiC in nuclear reactors. Therefore, a thorough understanding of the laser irradiation response of group IVB carbides is of clear significance. However, the existing knowledge on the fundamental properties of IVB group carbides is limited and insufficient with regard to both irradiated and non-irradiated characteristics. We investigate the effect of ultrafast laser irradiation on the lattice stability of ceramic materials(IVB group carbides) using the density functional perturbation theory(DFPT). The calculated phonon frequencies of TiC and ZrC at the ground state are in good agreement with previous calculations and experimental values. The phonon frequencies of IVB group carbides are positive, even though the electronic temperature reached 5 eV. Thus, IVB group carbides are more stable under ultrafast laser irradiation, which has greater benefits in nuclear and aeronautical applications compared to metals(W,Na), semimetals(Bi),and semiconductors(Si,SiC). The thermodynamic properties of ZrC are calculated as functions of their lattice temperature at different electronic temperatures. The elastic shear constants of IVB group carbides satisfy the Born stability criteria at Te = 5 eV. In addition, a comparison of the predicted melting temperatures of IVB group carbides, reveal that HfC is better suited for extreme high-temperature environments.     

Effect of Intense Laser Irradiation on the Lattice Stability of Al_2Au

The structural, electronic and lattice-dynamical properties of the intermetallic Al 2 Au at different electronic temperatures have been investigated via density functional calculations. The results of electronic density of state indicate that, although its value changes considerably, Al2Au is still of metal with the increasing of electronic temperature. The acoustic mode of Al2Au gets negative which leads to lattice dynamical instability when the electronic temperature is beyond 1.44 eV. Moreover, with the increasing of the electronic temperature, the vibrational frequencies of the T1u optical mode (triply degenerate) of Al2Au at Γ point decrease first and increase then, the turning point is at Te = 1.40 eV. T2g optical mode at Γ point has a similar situation, but the turning point is at Te = 1.80 eV. The predicted melting temperatures of Al2Au undergo a sharp decrease from 1333K at normal temperature to 1172 K at Te = 1.8 eV after intense laser irradiation.     

Electron states in diluted magnetic semiconductors

One of the remarkable properties of the II–VI diluted magnetic semiconductor (DMS) quantum dot (QD) is the giant Zeeman splitting of the carrier states under application of a magnetic field. This splitting reveals strong exchange interaction between the magnetic ion moment and electronic spins in the QD. A theoretical study of the electron spectrum and of its relaxation to the ground state via the emission of a longitudinal optical (LO) phonon, in a CdSe/ZnMnSe self-assembled quantum dot, is proposed in this work. Numerical calculations showed that the strength of this interaction increases as a function of the magnetic field to become more than 30 meV and allows some level crossings. We have also shown that the electron is more localized in this DMS QD and its relaxation to the ground state via the emission of one LO phonon is allowed.