Spin manipulation in semiconductor quantum dots qubit

Thirty years of effort in semiconductor quantum dots has resulted in significant developments in the control of spin quantum bits(qubits). The natural two-energy level of spin states provides a path toward quantum information processing. In particular, the experimental implementation of spin control with high fidelity provides the possibility of realizing quantum computing. In this review, we will discuss the basic elements of spin qubits in semiconductor quantum dots and summarize some important experiments that have demonstrated the direct manipulation of spin states with an applied electric field and/or magnetic field. The results of recent experiments on spin qubits reveal a bright future for quantum information processing.     

Planar Dirac electrons in magnetic quantum dots

In this paper, we explore the size- and mass-dependent energy spectra and the electronic correlation of two- and three-electron graphene magnetic quantum dots. It is found that only the magnetic dots with large size can well confine the electrons. For large graphene magnetic dots with massless (ultra-relativity) electrons, the energy level structures of two Dirac electrons and even the ground state spin and angular momentum of three electrons are quite different from those of the usual semiconductor quantum dots. Also we reveal that such differences are not due to the magnetic confinement but originate from the character of the Coulomb interaction of two-component electronic wavefunctions in graphene. We reveal that the increase of the mass leads to both the crossover of the energy spectrum structures from the ultra-relativity to non-relativity ones and the increasing of the crystallization. The results are helpful for the understanding of the mass and size effects and may be useful in controlling the few-electron states in graphene-based nanodevices.     

Mesoscopic one-way channels for quantum state transfer via the quantum Hall effect

We show that the one-way channel formalism of quantum optics has a physical realization in electronic systems. In particular, we show that magnetic edge states form unidirectional quantum channels capable of coherently transporting electronic quantum information. Using the equivalence between one-way photonic channels and magnetic edge states, we adapt a proposal for quantum state transfer to mesoscopic systems using edge states as a quantum channel, and show that it is feasible with reasonable experimental parameters. We discuss how this protocol may be used to transfer information encoded in number, charge, or spin states of quantum dots, so it may prove useful for transferring quantum information between parts of a solid-state quantum computer.     

Nuclear spin diffusion effects in optically pumped quantum wells

We studied the influence of the nuclear spin diffusion on the dynamical nuclear polarization of low dimensional nanostructures subject to optical pumping. Our analysis shows that the induced nuclear spin polarization in semiconductor nanostructures will develop both a time and position dependence due to a nonuniform hyperfine interaction as a result of the geometrical confinement provided by the system. In particular, for the case of semiconductor quantum wells, nuclear spin diffusion is responsible for a nonzero nuclear spin polarization in the quantum well barriers. As an example we considered a 57 Å GaAs square quantum well and a 1000 Å Al _x Ga_1?x As parabolic quantum well both within 500 Å Al_0.4Ga_0.6As barriers. We found that the average nuclear spin polarization in the quantum well barriers depends on the strength of the geometrical confinement provided by the structure and is characterized by a saturation time of the order of few hundred seconds. Depending on the value of the nuclear spin diffusion constant, the average nuclear spin polarization in the quantum well barriers can get as high as 70% for the square quantum well and 40% for the parabolic quantum well. These results should be relevant for both time resolved Faraday rotation and optical nuclear magnetic resonance experimental techniques.     

Phonon-mediated electron-spin phase diffusion in a quantum dot

An effective spin relaxation mechanism that leads to electron spin decoherence in a quantum dot is proposed. In contrast with the common calculations of spin-flip transitions between the Kramers doublets, we take into account a process of phonon-mediated fluctuation in the electron spin preces-sion and subsequent spin phase diffusion. Specifically, we consider modulations in the longitudinal g factor and hyperfine interaction induced by the phonon-assisted transitions between the lowest electronic states. Prominent differences in the temperature and magnetic field dependence between the proposed mechanism and the spin-flip transitions are expected to facilitate its experimental verification. Numerical estimation demonstrates highly efficient spin relaxation in typical semiconductor quantum dots.     

Entanglement and Zeeman interaction in diluted magnetic semiconductor quantum dot

We present theoretically the Zeeman coupling and exchange-induced swap action in spin-based quantum dot quantum computer models in the presence of magnetic field. We study the valence and conduction band states in a double quantum dots made in diluted magnetic semiconductor. The latter have been proven to be very useful in building an all-semiconductor platform for spintronics. Due to a strong p–d exchange interaction in diluted magnetic semiconductor (Cd_0.57Mn_0.43Te), the relative contribution of this component is strongly affected by an external magnetic field, a feature that is absent in nonmagnetic double quantum dots. We determine the energy spectrum as a function of magnetic field within the Hund–Mulliken molecular-orbit approach and by including the Coulomb interaction. Since we show that the ground state of the two carriers confined in a vertically coupled quantum dots provide a possible realization for a gate of a quantum computer, the crossing between the lowest states, caused by the giant spin splitting, can be observed as a pronounced jump in the magnetization of small magnetic field amplitude. Finally, we determine the swap time as a function of magnetic field and the inter dot distance. We estimate quantitatively swap errors caused by the field, establishing that error correction would, in principle, be possible in the presence of nonuniform magnetic field in realistic structures.     

Low-energy electronic properties of a Weyl semimetal quantum dot

We investigate the low-energy electronic structure of a Weyl semimetal quantum dot(QD) with a simple model Hamiltonian with only two Weyl points. Distinguished from the semiconductor and topological insulator QDs, there exist both surface and bulk states near the Fermi level in Weyl semimetal QDs. The surface state, distributed near the side surface of the QD, contributes a circular persistent current, an orbital magnetic moment, and a chiral spin polarization with spin-current locking. There are always surface states even for a strong magnetic field, even though a given surface state gradually evolves into a Landau level with increasing magnetic field. It indicates that these unique properties can be tuned via the QD size. In addition, we show the correspondence to the electronic structures of a three-dimensional Weyl semimetal, such as Weyl point and Fermi arc. Because a QD has the largest surface-to-volume ratio, it provides a new platform to verify Weyl semimetal by separating and detecting the signals of surface states. Besides, the study of Weyl QDs is also necessary for potential applications in nanoelectronics.     

The dependence of the quantum oscillation amplitude on spin splitting

The electron density of states of a semiconductor in magnetic field exhibits an oscillatory behaviour. The amplitude of these oscillations is studied theoretically as a function of the electron spin splitting. The amplitude is shown to be strongly reduced when the spin splitting is equal to the half of the orbital splitting ?ω, provided that the collision broadening of the electronic levels is large enough. This fact should be reflected in a similar reduction of the amplitude of various quantum oscillatory phenomena, e.g. Shubnikov-de Haas effect.     

Magnetism in closed-shell quantum dots: emergence of magnetic bipolarons

Similar to atoms and nuclei, semiconductor quantum dots exhibit the formation of shells. Predictions of magnetic behavior of the dots are often based on the shell occupancies. Thus, closed-shell quantum dots are assumed to be inherently nonmagnetic. Here, we propose a possibility of magnetism in such dots doped with magnetic impurities. On the example of the system of two interacting fermions, the simplest embodiment of the closed-shell structure, we demonstrate the emergence of a novel broken-symmetry ground state that is neither spin singlet nor spin triplet. We propose experimental tests of our predictions and the magnetic-dot structures to perform them.     

Semiconductor heterostructures for spintronics and quantum information

A selection of optical experiments is presented, demonstrating the utility of semiconductors in two novel areas of research: spintronics and quantum information. First we show examples of spin manipulation in semiconductor quantum wells. The light is used to generate a spin polarization and to detect it. Next we discuss application of optical methods in studies of carrier-induced ferromagnetism in quantum wells. Finally, we present examples of single quantum dot spectroscopy related to perspectives of application of quantum dots in quantum information, and, in particular, the use of photon correlation measurements as a tool to study the quantum dot excitation mechanisms. To cite this article: J.A. Gaj et al., C. R. Physique 8 (2007).     

Optical and electronic properties of quantum dots with magnetic impurities

The article discusses some of the recent results on semiconductor quantum dots with magnetic impurities. A single Mn impurity incorporated in a quantum dot strongly changes the optical response of a quantum-dot system. A character of Mn-carrier interaction is very different for II-VI and III-V quantum dots (QDs). In the II-VI QDs, a Mn impurity influences mostly the spin-structure of an exciton. In the III-V dots, a spatial localization of hole by a Mn impurity can be very important, and ultimately yields a totally different spin structure. A Mn-doped QD with a variable number of mobile carriers represents an artificial magnetic atom. Due to the Mn-carrier interaction, the order of filling of electronic shells in the magnetic QDs can be very different to the case of the real atoms. The “periodic” table of the artificial magnetic atoms can be realized in voltage-tunable transistor structures. For the electron numbers corresponding to the regime of Hund's rule, the magnetic Mn-carrier coupling is especially strong and the magnetic-polaron states are very robust. Magnetic QD molecules are also very different to the real molecules. QD molecules can demonstrate spontaneous breaking of symmetry and phase transitions. Single QDs and QD molecules can be viewed as voltage-tunable nanoscale memory cells where information is stored in the form of robust magnetic-polaron states. To cite this article: A.O. Govorov, C. R. Physique 9 (2008).     

Micro-photoluminescence study of electron-spin injection in self-assembled semiconductor quantum dots

We present a micro-photoluminescence (m-PL) study of electron-spin injection under magnetic fields in self-assembled semiconductor quantum dots (QDs) of CdSe. A characteristic band line-up of the CdSe QDs coupled with a diluted magnetic semiconductor quantum well (DMS-QW) of ZnCdMnSe through a ZnSe barrier layer enabled us to inject the electron spins from the DMS-QW into QDs. An experimental evidence of the electron-spin injection was provided by observations of circularly polarized m-PL spectra from individual QDs in this coupled QD structure. We find anti-correlation of PL intensity in between the DMS-QW (spin injector) and the individual QDs (spin receiver).     

半导体核磁共振显微压力的质子全自旋量子门的实现

以实现质子全自旋量子门、观察半导体核子自旋态和量子计算为目的, 依据样品的自旋-晶格弛豫时间和自旋-自旋弛豫时间,采用脉冲调制序列控制磁共振的条件和翻转旋转框架,计算了共振显微压力. 结果表明,质子全自旋量子门具有高灵敏度和高Q操控性,通过扫描片段和激光干涉可以得到磁共振压力. 共振压力兼具MRI和AFM优点,是一种强有力的通过核自旋实现量子计算获得量子信息的有效方法. 关键词： 空间分辨率 共振显微 半导体光刻 电子束刻印     

Spin injection in a coupled system of a diluted magnetic semiconductor Zn0.80Mn0.20Se and self-assembled quantum dots of CdSe

Spin injection processes from a Zn_0.80Mn_0.20Se diluted magnetic semiconductor (DMS) to adjacent self-assembled CdSe quantum dots (QDs) were investigated by cw and time-resolved magneto-optical spectroscopy in combination with tunable laser excitation. Direct experimental evidence for the spin injection was provided from the generation of the spin polarization in the QDs, which was opposite to their expected intrinsic polarization, by resonantly generating the spins in the DMS. The observed limited spin polarization generated by the spin injection, together with the sensitivity of the spin injection efficiency on structure design, indicates severe spin loss during the process and calls for further investigations to optimize spin injection efficiency in quantum structures.     

Photoluminescence inner core excitation in semiconductor quantum structures

We introduce a photoluminescence inner core excitation (PLICE) for the studies of semiconductor quantum structures. This novel method, in which we use synchrotron radiation as tunable excitation source, is expected to facilitate us to obtain electronic and compositional information about buried quantum structures. Here we report experimental results on quantum dots (QDs) and quantum wires (QWRs), in order to demonstrate potential applicability of the method to the semiconductor nanostructure studies.     

Optical spin orientation of a single manganese atom in a quantum dot

The magnetic state of a single magnetic atom (Mn) embedded in an individual semiconductor quantum dot is optically probed using micro-spectroscopy. A high degree of spin polarization can be achieved for an individual Mn atom localized in a quantum dot using quasi-resonant or fully-resonant optical excitation at zero magnetic field. Optically created spin polarized carriers generate an energy splitting of the Mn spin and enable magnetic moment orientation controlled by the photon helicity and energy. The dynamics and the magnetic field dependence of the optical pumping mechanism shows that the spin lifetime of an isolated Mn atom at zero magnetic field is controlled by a magnetic anisotropy induced by the built-in strain in the quantum dots. The Mn spin distribution prepared by optical pumping is fully conserved for a few microseconds. This opens the way to full optical control of the spin state of an individual magnetic atom in a solid state environment.     

Non-stationary spin-filtering effects in correlated quantum dot

The influence of external magnetic field switching “on” and “off” on the non-stationary spin-polarized currents in the system of correlated single-level quantum dot coupled to non-magnetic electronic reservoirs has been analyzed. It was shown that considered system can be used for the effective spin filtering by analyzing its non-stationary characteristics in particular range of applied bias voltage.     

Pairing of spin excitations in lateral quantum dots

We demonstrate the existence of correlated electronic states as paired spin excitations of lateral quantum dots in the integer quantum Hall regime. Starting from the spin-singlet filling-factor nu=2 droplet, by increasing the magnetic field we force the electrons to flip spins and increase the spin polarization. We identify the second spin-flip process as one accompanied by correlated, spin depolarized phases, interpreted as pairs of spin excitons. The correlated states are identified experimentally in few-electron lateral quantum dots using high source-drain voltage spectroscopy.     

Excitation of the spin density and current by coherent light pulses in quantum wells

We study the orbital and spin dynamics of charge carriers induced by non-overlapping linearly polarized light pulses in semiconductor quantum wells. It is shown that such an optical excitation with coherent pulses leads to a spin orientation of photocarriers and an electric current. The effects are caused by the interference of optical transitions driven by individual pulses. The distribution of carriers in the spin and momentum spaces depends on the crystallographic orientation of quantum wells and can be efficiently controlled by the pulse polarizations, time delay and phase shift between the pulses, as well as an external magnetic field.