太赫兹源场致发射电子源

通过粒子模拟(PIC)软件模拟计算了在ps级别下二极与三极结构碳纳米管场致发射的电流密度与电子注聚焦性能。阳极电压在2 kV时,二极结构下电流密度达到1.85 A/cm2;三极结构下,栅压700 V时发射电流密度达到2.3 A/cm2,且在一定的三极结构参数与电极电压下,可以获得较好的电子注聚束效果。通过碳纳米管二极管发射实验,获得了6.6 A/cm2的发射电流密度,总发射电流达到52.1 mA,可以为太赫兹器件提供连续发射的电子注。     

碳纤维阴极的场致发射特性实验研究

 研究了具有一定导电性能的碳纤维的直流场致发射电子束特性，实验分别在大气环境、低真空（10^-1 Pa）及高真空(10^-5 Pa)环境下进行。实验结果表明，碳纤维具有一定的场致发射能力，并且发射特性和发射环境的真空度密切相关。在大气环境下，发射电子束流与所施加的电压符合Fowler-Nordheim关系，当电压为7 kV，电流为61.4 μA时，根据Fowler-Nordheim定理推算出碳纤维场致发射场增强因子为3.75×10⁵。在低真空条件下阳极只收集到微弱的电流；在高真空条件下，阴极发射明显，在较低电压下就能观测到阳极电流，放电前阳极最高电流是大气条件下的3~4倍，发射的束流大小和所施加在尖端的电压关系接近Child-Langmiur定律。     

Electrohydrodynamic dispersion of metals using electron-beam heating

The generation of metallic nanoparticles using an electrohydrodynamic source is considered; in this process, the surface of a metallic anode tip is melted with an electron beam. At an anode voltage of 11–12 kV and a current of 0.2–0.3 mA, structures that mainly consist of metallic particles 20–30 nm in size form on a substrate. An increase in the current leads to the appearance of larger particles on the substrate. The conditions of nanoparticle formation are analyzed, and nanoparticles are shown to form as a result of the cascade fragmentation of the initial metallic microdrops emitted from the anode surface under the action of an electric field. The fragmentation of the initial drops is caused by the capillary instability that appears due to the recharging of these drops when they fly through an electron beam focused near the anode surface.     

Fabrication and properties of film-under-gate field emission arrays with SnO2 emitters for flat lamp

The film-under-gate field emission arrays (FEAs) have been fabricated on the glass substrates by conventional photolithography, anodic oxidation and lift-off method. SnO₂ emitters were deposited on the cathode electrodes of under-gate triode by screen printing. The image of film-under-gate field emission arrays with SnO₂ emitters was measured by the optical microscopy and field emission scanning electron microscopy (FESEM). The electric field distributions and electron trajectories of film-under-gate triode were simulated in the same anode voltage and different gate voltage by ANSYS. I-V characteristics of film-under-gate triode with SnO₂ emitters were investigated. It indicated that the SnO₂ emitters by screen printing uniformly distributed on the surface of cathode electrodes. The maximum anode current in this triode structure could come to 385 μA and the highest lightness was approximately 270 cd/m² as the gate and anode voltage was 140 V and 2000 V, respectively, at the anode-cathode spacing of 1100 μm. Moreover, the emission current fluctuation was less than 5% for 8 h. It showed that the fabricated device has a good stability of field emission performance and long lifetime, which may lead to practical applications for field emission electron source based on flat lamp for back light units (BLUs) in liquid crystal display (LCD).     

Electron emission characteristics of Al-AlN granular films

An electron conduction emitter of Al-AlN granular films was proposed for surface conduction electron emission device in this paper. The Al-AlN granular films with thickness of 30 nm were prepared between two co-planar electrodes with gap of 10 μm by magnetron sputtering. After electroforming the Al-AlN granular films, the films’ structure could be recovered by applying the periodic device voltage (V_f). Stable and uniform electron emission was observed with turn-on voltage of 5.3 V and threshold voltage of 9 V. The emitter emission current (I_e) of 4.84 μA for 36 cells was obtained with the anode voltage of 2.5 kV and the device voltage of 12 V. In addition, Fowler-Nordheim plots for I_e-V_f properties showed that the electron emission mechanism should be field emission.     

Optimization of accurate controlled formation of Au MNPs via non-thermal microplasma continuous glow discharge within aqueous electrochemical (GDE) method

In this work, micro plasma-induced non-equilibrium liquid chemistry was utilized to synthesize and controlled formation of gold metallic nanoparticles (Au MNPs) by governing the concentration of (HAuCl₄). These new approaches based on both plasma and liquid electrolytes contain charged species, and the interactions between the two phases represent a unique combination of physics, chemistry, and materials science. Continuous and stable DC glow discharge was done in home–made cavity to synthesize the definite sizes of (Au MNPs) by means of (3 kV) discharge voltage and (2 mA) discharge current for a period of (7 min) in aqueous solution of HAuCl₄ with four different concentrations of about 1 mM, 5 mM, 10 mM and 20 mM at room temperature. The atmospheric pressure plasma discharge between stainless steel capillary tube cathode electrode over the (HAuCl₄) solution and platinum plate as an anode dipped in solution for rapid formation of colloidal Au MNPs. Morphology aspects of the synthesized Au MNPs layer were studied by examining the (FE-SEM), HR-TEM images and X-ray difraction (XRD) pattern. Optical features of (Au MNPs) were considered via a UV–Vis beam spectrophotometer. These measurements showed that Au MNPs were organized by governing the concentration of HAuCl₄, and uniform Au MNPs with specific exclusive sizes were acquired. Grain size, specific surface area and optical stability of Au MNPs strongly be affected by the HAuCl₄ concentrations.     

Improvement of performance of tetraphenylporphyrin-based red organic light emitting diodes using WO3 and C60 buffer layers

One of the porphyrin derivatives, meso-tetraphenylporphyrin (TPP), has been synthesized and examined as an emitter material (EM) for efficient fluorescent red organic light-emitting diodes (OLEDs). By inserting a tungsten oxide (WO₃) layer into the interface of anode (ITO) and hole transport layer N,N′-Di-[(1-napthyl)-N,N′-diphenyl]-(1,1′-biphenyl)-4,4′-diamine (NPB) and by using fullerene (C₆₀) in contact with a LiF/Al cathode, the performance of devices was markedly improved. The current density–voltage–luminance (J–V–L) characterizations of the samples show that red OLEDs with both WO₃ and C₆₀ as buffer layers have a lower driving voltage and higher luminance compared with the devices without buffer layers. The red OLED with the configuration ITO/WO₃ (3 nm)/NPB (50 nm)/TPP (60 nm)/BPhen (30 nm)/C₆₀ (5 nm)/LiF (0.8 nm)/Al (100 nm) achieved the high luminance of 6359 cd/m² at the low driving voltage of 8 V. At a current density of 20 mA/cm², a pure red emission with CIE coordinates of (0.65; 0.35) is observed for this device. Moreover, a power efficiency of 2.07 lm/W and a current efficiency of 5.17 cd/A at 20 mA/cm² were obtained for the fabricated devices. The study of the energy level diagram of the devices revealed that the improvement in performance of the devices with buffer layers could be attributed to lowering of carrier-injecting barrier and more balanced charge injection and transport properties.     

Gridded Cross Field Tube

A triode crossed field tube has been operated as a high voltage on-off switch tube. A third, partially transparent (grid) electrode is interposed between the anode and cathode and electrically tied to the cathode by a grid leak resistor. High voltage is first applied to the anode and cathode; the magnetic field is then raised to the conduction level (~ 0.01 Tesla). Ignition does not occur because the magnetic field is too low in the grid-anode gap and the electric field is zero in the cathode-grid gap. Pulsing the grid positive relative to the cathode (~ 1 kV) then results in breakdown of the cathode-grid gap; plasma comunication between the two gaps then fully ignites the tube and closes the main power circuit. Grid ignition has been achieved at 50 kV as well as grid ignition followed by current interruption against 10 kV. These levels were limited by the use of a modified, laboratory tube and not by the physics of the technique.     

Determining the work function of a carbon-cone cold-field emitter by in situ electron holography

Cold-field emission properties of carbon cone nanotips (CCnTs) have been studied in situ in the transmission electron microscope (TEM). The current as a function of voltage, i(V), was measured and analyzed using the Fowler–Nordheim (F–N) equation. Off-axis electron holography was employed to map the electric field around the tip at the nanometer scale, and combined with finite element modeling, a quantitative value of the electric field has been obtained. For a tip-anode separation distance of 680 nm (measured with TEM) and a field emission onset voltage of 80 V, the local electric field was 2.55 V/nm. With this knowledge together with recorded i(V) curves, a work function of 4.8 ± 0.3 eV for the CCnT was extracted using the F–N equation.     

BXERL photo-injector based on a 217 MHz normal conducting RF gun

The Beijing X-ray Energy Recovery Linac (BXERL) test facility is proposed in Institute of High Physics (IHEP). In this proposal, the main linac requires the injector to provide an electron beam with 5 MeV energy and 10 mA average current. An injector based on DC gun technology is the first candidate electron source for BXERL. However, the field emission in the DC gun cavity makes it much more difficult to increase the high voltage to more than 500 kV. Another technology based on a 217 MHz normal conducting RF gun is proposed as the backup injector for this test facility. We have designed this RF gun with 2D SUPERFISH code and 3D MICROWAVE STUDIO code. In this paper, we present the optimized design of the gun cavity, the gun RF parameters and the set-up of the whole injector system. The detailed beam dynamics have been done and the simulation results show that the injector can generate electron bunches with RMS normalized emittance 1.0 uppi mmcdotmrad, bunch length 0.77 mm, beam energy 5.0 MeV and energy spread 0.60%.     

Low energy ion beams by laser interaction

We developed an ion accelerator with a double accelerating gap system supplied by two power generators of different polarity. The ions were generated by laser ion source technique. The laser plasma induced by an excimer KrF laser, freely expanded before the action of accelerating fields. After the first gap action, the ions were again accelerated by a second gap. The total acceleration can imprint a maximum ion energy up to 160 keV per charge state. We analysed the extracted charge from a Cu target as a function of the accelerating voltage at laser energy of 9, 11 and 17 mJ deposited on a spot of 0.005 cm². The peak of current density was 3.9 and 5.3 mA for the lower and medium laser energy at 60 kV. At the highest laser energy, the maximum output current was 11.7 mA with an accelerating voltage of 50 kV. The maximum ion dose was estimated to be 10¹² ions/cm². Under the condition of 60 kV accelerating voltage and 5.3 mA output current the normalized emittance of the beam measured by pepper pot method was 0.22 π mm mrad.     

Generation of a submillisecond electron beam with a high-density current in a plasma-emitter diode under the conditions of open plasma boundary emission

The generation of a 250-μs-wide electron beam in a plasma-emitter diode is studied experimentally. A plasma was produced by a pulsed arc discharge in hydrogen. The electron beam is extracted from a circular emission hole 3.8 mm in diameter under open plasma boundary conditions. The beam accelerated in the diode gap enters into a drift space in the absence of an external magnetic field through a hole 4.1 mm in diameter made in the anode. The influence of electron current deposition at the edge of the anode hole on the beam’s maximum attainable current, above which the diode gap breaks down, is studied for different accelerating voltages and diode gaps. The role of processes occurring on the surface of the electrodes is shown. For an accelerating voltage of 32 kV, a mean emission current density of 130 A/cm² is achieved. The respective mean strength of the electric field in the acceleration gap is 140 kV/cm. Using the POISSON-2 software package, the numerical simulation of the diode performance is carried out and the shape of steady plasma emission boundaries in the cathode and anode holes is calculated. The influence of the density of the ion current from the anode plasma surface on the maximum attainable current of the electron beam is demonstrated.     

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The hardware design of solid-state anode high-voltage power supply in electron cyclotron resonance heating system (ECRH) is presented. The anode power supply uses the method that combined high-frequency pulse width modulation (PWM) and phase shift modulation (PSM) control technology. The former in the supply uses the SG3525 to control the IGBT to complete the high frequency invert. The latter is made up of a total of 59 modules connected in series. The output voltage of each module is basically stabilized by feedback of the first stage module output voltage. DSP controls the number of PSM module on and off and the 59th module BUCK circuit duty cycle to achieve the output voltage of the superimposed output, and the output voltage can be adjusted within the full range of 35kV with accuracy less than 0.1kV, the output current up to 200mA, modulation frequency more than 1kHz. The anode power supply has three operating modes, and the rising edge time of the waveform can be adjusted within 3ms. The results tested from dummy load and ECRH experimental platform show that its performance is stable, and the hardware design method is feasible.     

2D planar field emission devices based on individual ZnO nanowires

2D planar field emission devices based on individual ZnO nanowires were achieved on Si/SiO₂ substrate via a standard e-beam lithography method. The anode, cathode and ZnO nanowires were on the same substrate; so the electron field emission is changed to 2D. Using e-beam lithography, the emitter (cathode) to anode distance could be precisely controlled. Real time, in situ observation of the planar field emission was realized in a scanning electron microscope. For individual ZnO nanowires, an onset voltage of 200 V was obtained at 1 nA. This innovative approach provides a viable and practical methodology to directly implement into the integrated field emission electrical devices for achieving “on-chip” fabrication.     

Analysis of characteristic X-ray generation induced by laser plasma electrons accelerated by an electric field

The results of experiments devoted to the study of spectral, spatial, and time characteristics of a spectrally bright point x-ray source based on a vacuum diode with a laser-plasma cathode and a titanium needle anode with a photon energy approximately equal to 4.5 keV are presented. The experimental results revealed a considerable difference between the electron emission from laser plasma in a strong electric field and the explosive electron emission and demonstrated the effectiveness of laser plasma as an electron source. The optimization of the laser radiation power density, the accelerating voltage, and the interelectrode spacing made it possible to create a point x-ray source whose spectral brightness exceeds available sources in the class of small-size pulse x-ray instruments (tubes with explosive cathodes). It has been proved experimentally that the maximum contrast of the characteristic lines of the anode material is attained in the case of an optimal choice of accelerating voltage. The x-ray source has the following parameters: (1) spectral brightness of the K-lines of titanium of the order of 10²¹ photons/cm² s sr keV; (2) emitting region size of 250 mm; and (3) laser pulse duration less than 20 ns.     

Micro-gated-field emission arrays with single carbon nanotubes grown on Mo tips

Using our approach previously reported, we have fabricated relatively large area micro-gated-field emission arrays with carbon nanotube (CNT) grown on Mo tips. By redesigning the device and fabrication processes, the percentage of single CNTs increased to about 50-70% with a substantial improvement in leakage current between gate and cathode and gate interceptive current. The I-V measurement of a 11000 cell array at a gate to cathode voltage of 92 V showed an anode current of 1.2 mA, corresponding to a current density of 0.57 A/cm², with a gate current only 3.3% of the anode current.     

Enhanced field emission from pulsed laser deposited nanocrystalline ZnO thin films on Re and W

Nanocrystalline ZnO thin films have been deposited on rhenium and tungsten pointed and flat substrates by pulsed laser deposition method. An emission current of 1 nA with an onset voltage of 120 V was observed repeatedly and maximum current density ∼1.3 A/cm² and 9.3 mA/cm² has been drawn from ZnO/Re and ZnO/W pointed emitters at an applied voltage of 12.8 and 14 kV, respectively. In case of planar emitters (ZnO deposited on flat substrates), the onset field required to draw 1 nA emission current is observed to be 0.87 and 1.2 V/μm for ZnO/Re and ZnO/W planar emitters, respectively. The Fowler–Nordheim plots of both the emitters show nonlinear behaviour, typical for a semiconducting field emitter. The field enhancement factor β is estimated to be ∼2.15×10⁵ cm⁻¹ and 2.16×10⁵ cm⁻¹ for pointed and 3.2×10⁴ and 1.74×10⁴ for planar ZnO/Re and ZnO/W emitters, respectively. The high value of β factor suggests that the emission is from the nanometric features of the emitter surface. The emission current–time plots exhibit good stability of emission current over a period of more than three hours. The post field emission surface morphology studies show no significant deterioration of the emitter surface indicating that the ZnO thin film has a very strong adherence to both the substrates and exhibits a remarkable structural stability against high-field-induced mechanical stresses and ion bombardment. The results reveal that PLD offers unprecedented advantages in fabricating the ZnO field emitters for practical applications in field-emission-based electron sources.     

Feasibility study on high current ion beam extraction from anode spot plasma for large area ion implantation

In this paper, we have investigated the feasibility of the high current beam extraction from anode spot plasma as an ion source for large area ion implantation. Experiments have been carried out with the ambient plasma produced by inductive coupling with radio-frequency (RF) power of 200 W at the frequency of 13.56 MHz. Anode spot plasmas are generated near the extraction hole of 2 mm in diameter at the center of a bias electrode whose area exposed to the ambient plasma can be changed. It is found that the maximum ion beam current is extracted at the optimum operating pressure at which the area of bias electrode exposed to ambient plasma is fully covered with the anode spot plasma whose size is dominantly determined by the operating pressure for given gas species. It is also observed that the extracted ion beam current increases nonlinearly with the bias power due to the changes in size and shape of the anode spot plasma. With the well-established anode spot plasma operating at the optimum gas pressure, we have successfully extracted high current ion beam of 6.4 mA (204 mA/cm²) at the bias power of 22 W (∼10% of RF power), which is 43 times larger than that extracted from the plasma without anode spot. Based on the experimental results, criteria for electrode design and operating pressure for ion beam extraction from larger extraction aperture are suggested. In addition, the stability of anode spot plasma in the presence of ion beam extraction through an extraction hole is discussed in terms of the particle balance model.     

SHAPE MEASUREMENT OF SYNCHROTRON RADIATION WITH HIGH TIME RESOLUTION

By using BWS-5k II streak camera made in China,we have measured the time structure of Synchrotron Radiation (SR) from the relatrivistic electron and positron beam bunches of Beijing Electron Positron Collider (BEPC).The dependence of SR width to the intensity of beam current and the voltage of RF source was also measured.The main data taken with 30ps time resolution in the experiment are as follows: The length of VR at E_e=1.549GeV is changed from 220ps to 670ps when the average beam current from 2mA to 30mA,the variation range of CR length at 20mA beam current is 500—700ps with RF source voltage varying between 250kV and 500kV.The time calibration uncertainty of the experiment is ±15%.The trigger jitter is less than ±200ps.     

Cathodoluminescence of monoclinic Li3AlF6 crystals in the spectral region of 150–600 nm

Cathodoluminescence (CL) of monoclinic LiAF crystals was studied in the spectral (150–600 nm) and temperature (78–302 K) ranges using both the steady-state CL and pulse CL (PCL) techniques. Three CL emission bands were found in the spectral range of 150–600 nm. The dominant complex CL band at 350 nm obeys the Mott law (E = 0.072 eV and ω = 750). On heating, the 172 and 208–212 nm CL bands vary in intensity non-monotonically. At T = 78 K, the CL decay kinetics comprises three components: a dominant fast exponential component with a lifetime of 750 ns, and two low-intensity components with the lifetimes of 20 and 240 μs. The last two components were fitted by a second order hyperbolic law. Time-resolved PCL spectra were recorded using time-windows corresponding to the PCL decay components. Paper discusses the reasonable interpretation of the CL emission bands.