Ab initio cluster calculations on the electronic structure of oxygen vacancies at the polar ZnO(0001) surface and on the adsorption of H2, CO, and CO2 at these sites

Oxygen vacancies at the polar O terminated (0001) surface of ZnO are of particular interest, because they are discussed as active sites in the methanol synthesis. In general, the polar ZnO surfaces are stabilized by OH groups, therefore O vacancies can be generated by removing either O atoms or OH or H2O groups from the surface. These defects differ in the number of electrons in the vacancy and the number of OH groups in the neighborhood. In the present study, the electronic structure and the adsorption properties of four different types of oxygen vacancies have been investigated by means of embedded cluster calculations. We performed ab initio calculations on F+ like surface excitations for the different defect types and found that the transition energies are above the optical band-gap, while F+ centers in bulk ZnO show a characteristic optical excitation at 3.19 eV. Furthermore, we studied the adsorption of CO2 and CO at the different defect sites by DFT calculations. We found that CO2 dissociates at electron rich vacancies into CO and an O atom which remains in the vacancy. At the OH vacancy which contains an unpaired electron CO2 adsorbed in the form of CO2-, while it adsorbed as a linear neutral molecule at the H2O defect. CO adsorbed preferentially at the H2O defect and the OH defect, both with a binding energy of 0.3 eV.     

氧化铜表面臭氧分解路径及表面氧物种生成机理研究

基于密度泛函理论（DFT）计算研究了O3在完整和具有氧空位的CuO(111)表面吸附的吸附位、吸附结构、吸附能和电子转移情况,比较了O3在完整表面和具有氧空位的表面分解的路径和能垒,分析了氧空位和表面吸附氧的生成机理。结果表明,在完整CuO表面,O3分子通过化学吸附或物理吸附表面结合,吸附能最高为-1.22eV（构型bri(2)）。O3在具有氧空位的CuO表面均为化学吸附,吸附能最高为-2.95eV（构型ovbri(3)）,显著高于完整表面的吸附能。O3吸附后,Cu吸附位的电荷密度减小,O3中的O原子附近的电荷密度显著增强,电荷从CuO表面转移到O3,并形成Cu-O离子键。O3分解后形成了超氧物种,提高了表面的氧化活性。在完整表面,以构型bri(2)为起始构型的路径反应能垒最低,为0.52eV;O2*在完整表面的脱附所需要的最低能量为0.42eV,形成氧空位的O2*脱附能为2.06eV。在具有氧空位的表面,O3分解的反应能垒为0.30eV（构型ovbri(1)）和0.12eV（构型ovbri(3)）,均低于完整表面的反应能垒;分解形成的O2*的最低脱附能也低于完整表面,为0.27eV。可见,氧空位的形成提高了吸附能,降低了反应能垒,使O3分子更容易吸附在CuO表面,并加快了O3的催化分解。     

Pt/Cu(001)-p(2×2)-O表面吸附结构的总能计算

采用密度泛函理论(DFT)研究了氧吸附后Pt/Cu(001)表面合金的原子结构和表面性质. 计算结果表明, 在Pt/Cu(001)-p(2×2)-O表面最稳定结构中, 衬底表面原子层不发生再构, 氧原子吸附于4重对称的Pt原子谷位, 每个氧原子吸附能约为2.303 eV. 吸附结构的Cu—O和Pt—O键键长分别为0.202和0.298 nm, 氧原子的吸附高度ZCu—O约为0.092 nm. 吸附前后Pt/Cu(001)-1ML(monolayer)表面合金的表面功函数分别为4.678和5.355 eV. 吸附表面氧原子和衬底的结合主要来自氧原子2p轨道和衬底金属原子d轨道的杂化作用, 氧原子吸附形成的表面电子态主要位于费米能级以下约-2.7 eV 处.     

O2在具有氧和镁缺陷MgO(001)表面的吸附

在密度泛函理论的框架下，采用嵌入点电荷簇模型研究了O2在具有氧缺陷和镁缺陷MgO(001)表面上的吸附.用电荷自洽的方法确定了点电荷的值.计算结果表明，O2倾向吸附在具有氧缺陷的MgO(001)表面上.通过和我们近期研究过的O2在低配位的边、角上吸附结果相比较，发现具有氧缺陷的MgO(001)表面更加有利于O2的吸附和解离. Mülliken电荷分析表明，电荷由底物向吸附的O2反键轨道上转移是导致O2键强削弱的主要原因.势能曲线表明，O2在具有氧缺陷的MgO(001)表面上发生解离所需要克服的能垒比在角阳离子端发生解离所需克服的能垒有大幅度降低.     

Pt原子在γ-Al2O3(001)表面的吸附及迁移

采用密度泛函理论(DFT)中广义梯度近似(GGA)方法, 对Pt原子与γ-Al₂O₃(001)面的相互作用及迁移性能进行了研究. 分析了各种可能吸附位及吸附构型的松弛和变形现象, 吸附能和迁移能垒的计算结果表明: Pt团簇能够稳定吸附在该表面. Pt原子在表面O位的吸附能明显较高, 这主要是由Pt向基底O原子转移了电子所致. 电荷布居分析表明, Pt原子显电正性, Pt和Al原子之间存在排斥作用, 导致与Al原子产生较弱相互作用. 计算的平均吸附能大小依赖于Pt团簇的大小和形状, 总体趋势是随着Pt原子数增多, 吸附能降低. Pt原子在γ-Al₂O₃(001)表面迁移过程所需克服的迁移能垒最高值为0.51 eV. 随着吸附的Pt原子数增多,更倾向于形成Pt团簇. 因此, Pt原子在γ-Al₂O₃(001)表面的吸附演变不可能形成光滑、均匀平铺的吸附构型, 而在一定条件下容易出现团聚.     

吸附O的Cu(110)c(2×1)表面原子结构和电子态

采用第一性原理的密度泛函理论方法计算了清洁Cu(110)表面和吸附O原子的Cu(110) c(2×1)表面的原子结构, 结构弛豫和电子结构, 得到了各种表面结构参数. 分别计算了O原子在Cu(110)表面三个可能吸附位置吸附后的能量, 并给出了能量最低的吸附位置上各层原子的弛豫特性和态密度. 结果表明O吸附后的Cu(110)表面有附加列(added-row)再构的特性, O原子吸附在最表层铜原子上方, 与衬底Cu原子的垂直距离为0.016 nm, 以氧分子为能量基准的吸附能为－1.94 eV; 同时由于Cu 3d- O 2p态的杂化作用使得低于费米能级5.5~6.0 eV的范围内出现了局域的表面态. 计算得到清洁的和氧吸附的Cu(110)表面的功函数分别为4.51 eV和4.68 eV. 电子态密度的结果表明：在Cu(110) c(2×1) 表面O吸附的结构下, 吸附O原子和金属衬底之间的结合主要是由于最表层Cu原子3d态和O原子2p态的相互作用.     

FT-IR、XPS和DFT研究水杨酸钠在针铁矿或赤铁矿上的吸附机理

采用傅里叶变换红外(FT-IR)光谱、X射线光电子能谱(XPS)以及基于周期平面波的密度泛函理论(DFT)分别研究了水杨酸钠在针铁矿或赤铁矿表面上的吸附结构,并将计算得到的光电子能谱移动(CLS)和电荷转移与实验得到的XPS结果进行对比。FT-IR结果表明,水杨酸钠可能以双齿双核(V)和双齿单核(IV)的形式分别吸附于针铁矿或赤铁矿表面。由DFT计算结果可知,水杨酸钠在针铁矿(101)晶面上形成双齿双核化合物(V)的吸附能为-5.46 eV。而水杨酸钠在针铁矿(101)晶面上形成双齿单核化合物(IV)的吸附能为3.80 eV,因此水杨酸钠在针铁矿上基本不以双齿单核化合物(IV)构型存在。水杨酸钠在赤铁矿(001)晶面上形成双齿单核化合物(IV)时吸附能为-4.07 eV,说明水杨酸钠在赤铁矿(001)晶面上形成了双齿单核化合物(IV)。另外,理论计算的针铁矿(101)晶面上吸附位点铁原子的Fe 2p的CLS值(-0.68 eV)与实验观察到的Fe 2p的CLS值(-0.5 eV)吻合。理论计算的赤铁矿(001)晶面上吸附位点铁原子的Fe 2p的CLS值(-0.80 eV)与实验观察到的Fe 2p的CLS值(-0.8 eV)吻合。因此,水杨酸钠吸附在针铁矿表面时能够通过羧酸基团上一个氧原子和酚羟基上的氧原子与针铁矿(101)表面上的两个铁原子形成双齿双核(V)结构,而在赤铁矿(001)表面上,水杨酸钠中羧酸基团上一个氧原子和酚羟基上的氧原子与赤铁矿(001)表面上的一个铁原子形成了双齿单核(IV)结构。     

The interaction of oxygen with TiC(001): photoemission and first-principles studies

High-resolution photoemission and first-principles density-functional slab calculations were used to study the interaction of oxygen with a TiC(001) surface. Atomic oxygen is present on the TiC(001) substrate after small doses of O(2) at room temperature. A big positive shift (1.5-1.8 eV) was detected for the C 1s core level. These photoemission studies suggest the existence of strong O<-->C interactions. A phenomenon corroborated by the results of first-principles calculations, which show a CTiTi hollow as the most stable site for the adsorption of O. Ti and C atoms are involved in the adsorption and dissociation of the O(2) molecule. In general, the bond between O and the TiC(001) surface contains a large degree of ionic character. The carbide-->O charge transfer is substantial even at high coverages (>0.5 ML) of oxygen. At 500 K and large doses of O(2), oxidation of the carbide surface occurs with the removal of C and formation of titanium oxides. There is an activation barrier for the exchange of Ti-C and Ti-O bonds which is overcome only by the formation of C-C or C-O bonds on the surface. The mechanism for the removal of a C atom as CO gas involves a minimum of two O adatoms, and three O adatoms are required for the formation of CO(2) gas. Due to the high stability of TiC, an O adatom alone cannot induce the generation of a C vacancy in a flat TiC(001) surface.     

Density functional study of the interaction between small Au clusters, Au(n) (n=1-7) and the rutile TiO2 surface. II. Adsorption on a partially reduced surface

We use density functional theory to examine the electronic structure of small Au(n) (n=1-7) clusters, supported on a rutile TiO(2)(110) surface having oxygen vacancies on the surface (a partially reduced surface). Except for the monomer, the binding energy of all Au clusters to the partially reduced surface is larger by approximately 0.25 eV than the binding energy to a stoichiometric surface. The bonding site and the orientation of the cluster are controlled by the shape of the highest occupied molecular orbitals (HOMOs) of the free cluster (free cluster means a gas-phase cluster with the same geometry as the supported one). The bond is strong when the lobes of the HOMOs overlap with those of the high-energy states of the clean oxide surface (i.e., with no gold) that have lobes on the bridging and the in-plane oxygen atoms. In other words, the cluster takes a shape and a location that optimizes the contact of its HOMOs with the oxygen atoms. Fivefold coordinated Ti atoms located at a defect site (5c-Ti(*)) participate in the binding only when a protruding lobe of the singly occupied molecular orbital (for odd n) or the lowest unoccupied molecular orbital (for even n) of the free Au(n) cluster points toward a 5c-Ti(*) atom. The oxygen vacancy influences the binding energy of the clusters (except for Au(1)) only when they are in direct contact with the defect. The desorption energy and the total charge on clusters that are close to, but do not overlap with, the vacancy differ little from the values they have when the cluster is adsorbed on a stoichiometric surface. The behavior of Au(1) is rather remarkable. The atom prefers to bind directly to the vacancy site with a binding energy of 1.81 eV. However, it also makes a strong bond (1.21 eV) with any 5c-Ti atom even if that atom is far from the vacancy site. In contrast, the binding of a Au monomer to the 5c-Ti atom of a surface without vacancies is weak (0.45 eV). The presence of the vacancy activates the 5c-Ti atoms by populating states at the bottom of the conduction band. These states are delocalized and have lobes protruding out of the surface at the location of the 5c-Ti atoms. It is the overlap of these lobes with the highest orbital of the Au atom that is the major reason for the bonding to the 5c-Ti atom, no matter how far the latter is from the vacancy. The energy for breaking an adsorbed cluster into two adsorbed fragments is smaller than the kinetic energy of the mass-selected clusters deposited on the surface in experiments. However, this is not sufficient for breaking the cluster upon impact with the surface, since only a fraction of the available energy will go into the reaction coordinate for breakup.     

A theoretic insight into the catalytic activity promotion of CeO2 surfaces by Mn doping

In this paper, we investigated the primary reduction and oxygen replenishing processes over Mn substitutionally doped CeO(2)(111) surfaces by density functional theory with the on-site Coulomb correction (DFT + U). The results indicated that Mn doping could make the surface much more reducible and the adsorbed O(2) could be effectively activated to form superoxo (O(2)(-)) and/or peroxo species (O(2)(2-)). The Mn doping induced the Mn 3d-O 2p gap state instead of Ce 4f acting as an electrons acceptor and donor during the first oxygen vacancy formation and O(2) replenishing, which helped to lower the formation energy of the first and second oxygen vacancies to -0.46 eV and 1.40 eV, respectively. In contrast, the formation energy of a single oxygen vacancy in the pure ceria surface was 2.08 eV and only peroxo species were identified as the O(2) molecule adsorbed. Our work provides a theoretical and electronic insight into the catalytic redox processes of Mn doped ceria surfaces, which may help to understand the enhanced catalytic performances of MnO(x)-CeO(2) oxides, as reported in previous experimental works.     

Adsorption and migration growth of the Ce,O, and F adatoms on the CeO2 (111) surface: A density functional theory study

In order to investigate the microscopic behavior of the crystal surface growth of the fluorinated cerium dioxide polishing powder, the adsorption and migration of the Ce, O, and F atoms on the CeO₂ (111) surface were studied by using density functional theory with Hubbard correction +U. The adsorption energies of three single atoms at five high-symmetry sites and the migration activation energies along the migration pathway on the CeO₂ (111) surface were calculated. Results show that the most stable adsorption sites of the Ce, O, and F atoms were the O_h, Ce_bri, and Ce_t sites, respectively. The Ce atom migrated from the O_h to the O_t site. The O atom migrated from the Ce_bri to the O_bri site. The F atom migrated from the Ce_t to the O_h site. The migration activation energies of the Ce, O, and F atoms along the migration pathways were 1.526, 0.597, and 0.263 eV, respectively. The F adatom does not change the spatial configuration of the Ce and the O atoms. When the O vacancy occurs on the CeO₂ (111) surface, the F adatom can make up for the O vacancy defect.     

CO在CeO2(111)表面的吸附与氧化

采用密度泛函理论计算了CO在CeO2(111)表面的吸附与氧化反应行为. 结果表明, O2在洁净的CeO2(111)表面为弱物理吸附, 而在氧空位表面是强化学吸附, 且O2分子活化程度较大, O—O键长为0.143 nm. CO在CeO2(111)表面吸附行为的研究表明, CO在洁净表面及氧空位表面上为物理吸附, 吸附能均小于0.42 eV; 当表面氧空位吸附O2后, CO可吸附生成二齿碳酸盐中间体或直接生成CO2, 与原位红外光谱结果相一致. 表面碳酸盐物种脱附生成CO2的能垒仅为0.28 eV. 计算结果表明, 当CeO2表面存在氧空位时, Hubbard参数U对CO吸附能有一定的影响. CeO2载体在氧化反应中可能的催化作用为, 在氧气氛下, CeO2表面氧空位吸附O2分子, 形成活性氧物种, 参与CO催化氧化反应.     

Oxygen vacancy formation for transient structures on the CeO2(110) surface at 300 and 750 K

Ab initio embedded-cluster calculations have been performed for the CeO2(110) surface using temperature induced structures from molecular dynamics (MD) snapshots. As a first step towards understanding how temperature induced distortions of the surface structure influence the surface oxygen reactivity, the energy cost of removing an O atom from the surface was calculated for 41 snapshots from the MD simulation at 300 K. The quantum mechanical embedded-cluster calculations show that already at 300 K the dynamics causes significant fluctuations (root mean square of 0.37 eV) in the O vacancy formation energy (Evac) while the distribution of the two excess electrons associated with the vacancy is virtually unaffected by the surface dynamics and remains localized on the two Ce ions close to the vacancy. It is also found that the quantum mechanical Evac fluctuations can be reproduced by oxygen vacancy calculations using only the relaxed shell-model force field (FF) itself and the MD geometries. Using the FF as the interaction model, the effect of raising the temperature to 750 K and the effect of doping with Ca were investigated for the oxygen vacancy formation.     

Surface dependence of CO2 adsorption on Zn2GeO4

An understanding of the interaction between Zn(2)GeO(4) and the CO(2) molecule is vital for developing its role in the photocatalytic reduction of CO(2). In this study, we present the structure and energetics of CO(2) adsorbed onto the stoichiometric perfectly and the oxygen vacancy defect of Zn(2)GeO(4) (010) and (001) surfaces using density functional theory slab calculations. The major finding is that the surface structure of the Zn(2)GeO(4) is important for CO(2) adsorption and activation, i.e., the interaction of CO(2) with Zn(2)GeO(4) surfaces is structure-dependent. The ability of CO(2) adsorption on (001) is higher than that of CO(2) adsorption on (010). For the (010) surface, the active sites O(2c)···Ge(3c) and Ge(3c)-O(3c) interact with the CO(2) molecule leading to a bidentate carbonate species. The presence of Ge(3c)-O(2c)···Ge(3c) bonds on the (001) surface strengthens the interaction of CO(2) with the (001) surface, and results in a bridged carbonate-like species. Furthermore, a comparison of the calculated adsorption energies of CO(2) adsorption on perfect and defective Zn(2)GeO(4) (010) and (001) surfaces shows that CO(2) has the strongest adsorption near a surface oxygen vacancy site, with an adsorption energy -1.05 to -2.17 eV, stronger than adsorption of CO(2) on perfect Zn(2)GeO(4) surfaces (E(ads) = -0.91 to -1.12 eV) or adsorption of CO(2) on a surface oxygen defect site (E(ads) = -0.24 to -0.95 eV). Additionally, for the defective Zn(2)GeO(4) surfaces, the oxygen vacancies are the active sites. CO(2) that adsorbs directly at the Vo site can be dissociated into CO and O and the Vo defect can be healed by the oxygen atom released during the dissociation process. On further analysis of the dissociative adsorption mechanism of CO(2) on the surface oxygen defect site, we concluded that dissociative adsorption of CO(2) favors the stepwise dissociation mechanism and the dissociation process can be described as CO(2) + Vo → CO(2)(δ-)/Vo → CO(adsorbed) + O(surface). This result has an important implication for understanding the photoreduction of CO(2) by using Zn(2)GeO(4) nanoribbons.     

O2 induced Cu surface segregation in Au-Cu alloys studied by angle resolved XPS and DFT modelling

Surface segregation effects on polycrystalline Au-Cu alloys (Au(0.80)Cu(0.20), Au(0.85)Cu(0.15) and Au(0.90)Cu(0.10)) were studied at room temperature by angle resolved XPS (ARXPS) and density functional theory (DFT) before and after exposure to O(2). Au surface enrichment was found as predicted from calculations showing that this process is energetically favourable, with a segregation energy for Au in a Cu matrix of -0.37 eV atom(-1). Surface enrichment with Cu was observed after exposure to O(2) due to its dissociative adsorption, in agreement with DFT calculations that predicted an energy gain of -1.80 eV atom(-1) for the transfer of Cu atoms to a surface containing adsorbed oxygen atoms, thus leading to an inversion in surface population.     

Transition from Mn(4+) to Mn(3+) induced by surface reconstruction at λ-MnO(2)(001)

Structural and electronic properties of the λ-MnO(2)(001) surface are investigated applying density functional theory approach. The calculations show that all Mn ions at unreconstructed smooth surface preserve the +4 oxidation state observed in the bulk. Upon the λ-MnO(2)(001) reconstruction, one fourth of Mn ions at the surface undergo a change of the oxidation state from +4 to +3, although the reconstruction does not change the Mn coordination number with oxygen. This is accompanied with the filling of initially empty 3d(z(2) ) states localized on cations with one electron denoted by two neighboring O atoms. Although the reconstruction leads to an energy gain of 0.04 eV per surface unit cell, it is not a spontaneous process since it proceeds with an activation energy of 0.12 eV.     

Density functional embedded cluster study of Cu(4), Ag(4) and Au(4) species interacting with oxygen vacancies on the MgO(001) surface

Cu(4), Ag(4), and Au(4) species adsorbed on an MgO(001) surface that exhibits neutral (F(s)) and charged (F(s) (+)) oxygen vacancies have been studied using a density functional approach and advanced embedding models. The gas-phase rhombic-planar structure of the coinage metal tetramers is only moderately affected by adsorption. In the most stable surface configuration, the plane of the tetramers is oriented perpendicular to the MgO(001) surface; one metal atom is attached to an oxygen vacancy and another one is bound to a nearby surface oxygen anion. A very similar structural motif was recently found on defect-free MgO(001), where two O(2-) ions serve as adsorption sites. Following the trend of the interactions with the regular MgO(001) surface, Au(4) and Cu(4) bind substantially stronger to F(s) and F(s) (+) sites than Ag(4). This stronger adsorption interaction at oxygen vacancies, in particular at F(s), is partly due to a notable accumulation of electron density on the adsorbates. We also examined the propensity of small supported metal species to aggregate to adsorbed di-, tri- and tetramers. Furthermore, we demonstrated that core-level ionization potentials offer the possibility for detecting experimentally supported metal tetramers and characterizing them structurally with the help of calculated data.     

Interaction of oxygen with TiN(001): N<-->O exchange and oxidation process

This work presents a detailed experimental and theoretical study of the oxidation of TiN(001) using a combination of synchrotron-based photoemission and density functional theory (DFT). Experimentally, the adsorption of O2 on TiN(001) was investigated at temperatures between 250 and 450 K. At the lowest temperature, there was chemisorption of oxygen (O(2,gas)-->2O(ads)) without significant surface oxidation. In contrast, at 450 K the amount of O2 adsorbed increased continuously, there was no evidence for an oxygen saturation coverage, a clear signal in the Ti 2p core level spectra denoted the presence of TiOx species, and desorption of both N2 and NO was detected. The DFT calculations show that the adsorption/dissociation of O2 is highly exothermic on a TiN(001) substrate and is carried out mainly by the Ti centers. A high oxygen coverage (larger than 0.5 ML) may induce some structural reconstructions of the surface. The exchange of a surface N atom by an O adatom is a highly endothermic process (DeltaE=2.84 eV). However, the overall oxidation of the surface layer is thermodynamically favored due to the energy released by the dissociative adsorption of O2 and the formation of N2 or NO. Both experimental and theoretical results lead to conclude that a TiN+mO2 -->TiOx + NO reaction is an important exit channel for nitrogen in the oxidation process.     

甲醛在CeO2(111)表面吸附的密度泛函理论研究

采用基于第一性原理的密度泛函理论和周期平板模型, 研究了甲醛在以桥氧为端面的CeO2(111)稳定表面上的吸附行为. 通过对不同覆盖度, 不同吸附位的甲醛吸附构型、吸附能及电子态密度的分析发现, 甲醛在CeO2(111)表面存在化学吸附与物理吸附两种情况. 化学吸附结构中甲醛的碳、氧原子分别与表面的氧、铈原子发生相互作用, 形成CH2O2物种; 吸附能随着覆盖度的增加而减小. 与自由甲醛分子相比, 物理吸附的甲醛构型变化不大, 其吸附能较小. 利用CNEB(climbing nudged elastic band)方法计算了甲醛在CeO2(111)表面的初步解离反应活化能(约1.71 eV), 远高于甲醛脱附能垒, 这与甲醛在清洁CeO2(111)表面程序升温脱附实验中产物主要为甲醛的结果相一致.     

H2分子在LaFeO3表面吸附的第一性原理研究

基于密度泛函理论的第一性原理方法,通过计算表面能确定LaFeO₃(010)表面为最稳定的吸附表面,研究了H₂分子在LaFeO₃(010)表面的吸附性质。LaFeO₃(010)表面存在LaO和FeO₂两种终止表面,但吸附主要发生在FeO₂终止表面,由于LaFeO₃(010)表面弛豫的影响,使得凹凸不平的表面层增加了表面原子与H原子的接触面积,表面晶胞的纵向体积增加约2.5%,有利于H原子向晶体内扩散。研究发现,H₂分子在LaFeO₃(010)表面主要存在3种化学吸附方式:第一种吸附发生在O-O桥位,2个H原子分别吸附在2个O原子上,形成2个-OH基,这是最佳吸附位置,此时H原子与表面O原子的作用主要是H1s与O2p轨道杂化作用的结果,H-O之间为典型的共价键。H₂分子的解离能垒为1.542 eV,说明表面需要一定的热条件,H₂分子才会发生解离吸附;第二种吸附发生在Fe-O桥位,1个H原子吸附在O原子上形成1个-OH基,另一个H原子吸附在Fe原子上形成金属键;第三种吸附发生在O顶位,2个H原子吸附在同一个O原子上,形成H₂O分子,此时H₂O分子与表面形成物理吸附,H₂O分子逃离表面后容易形成氧空位。此外,H₂分子在LaFeO₃(010)表面还可以发生物理吸附。