Reduced humic acid nanosheets and its uses as nanofiller

Leonardite is highly oxidized form of lignite coal and contains a number of carboxyl groups around the edges of a graphene-like core. A novel approach has been developed to synthesize graphene oxide-like nanosheets in large scale utilizing leonardite as a starting material. Humic acid extracted from leonardite has been reduced by performing a high pressure catalytic hydrogenation. The reaction was carried out inside a high pressure stirred reactor at 150 °C and 750 psi (~5.2×10⁶ Pa). Morphology of the as-synthesized samples showed porous platy particles and EDAX analysis indicates the carbon and oxygen atomic ratios as 96:4–97:3%. The as-synthesized material has been used as nanofiller in polyurethane. The reduced humic acid–polyurethane nanocomposite showed over 250% increase of Young’s modulus. This new approach provides a low cost and scalable source for graphene oxide-like nanosheets in nanocomposite applications.     

Role of substrate,temperature, and hydrogen on the flame synthesis of graphene films

Graphene films are grown in open-atmosphere on metal substrates using a multiple inverse-diffusion flame burner with methane as fuel. Substrate material (i.e. copper, nickel, cobalt, iron, and copper–nickel alloy), along with its temperature and hydrogen treatment, strongly impacts the quality and uniformity of the graphene films. The growth of few-layer graphene (FLG) occurs in the temperature range 750–950 °C for copper and 600–850 °C for nickel and cobalt. For iron, the growth of graphene is not exclusively observed. The variation of graphene quality for different substrates is believed to be due primarily to the difference in carbon solubility between the metals.     

Green synthesis of silver-graphene nanocomposite-based transparent conducting film

In the present work, silver nanoparticles (Ag NPs)/graphene nanocomposite has been synthesized successfully by simple solvothermal method via green route. Citric acid is used as green reducing agent for the reduction of graphene oxide (GO) and Ag ions. Silver nitrate is used as a precursor material for Ag NPs. As synthesized Ag NPs/graphene nanocomposite has been characterized by X-ray diffraction, Raman spectroscopy, Fourier transform infra-red spectroscopy, UV–vis spectroscopy, thermal gravimetric analysis, field emission scanning electron microscopy, and X-ray photoelectron spectroscopy. Experimental results confirm the reduction of GO and the successful formation of Ag NPs decorated graphene nanosheets. In addition, spray coating technique is employed for the fabrication of transparent conducting films. Enhancement in the optoelectrical signatures has been achieved using thermal graphitization of fabricated films. Thermal graphitization at 800 °C for 1 h marks the best performance of fabricated film with sheet resistance of ~3.4 kΩ/□ and transmittance (550 nm) of ~66.40%, respectively.     

Photoluminescence study of Ce-doped silica films

Ce-doped silica films with different Ce concentrations were prepared by ion-beam sputtering and ion implantation. The films containing 1.2 at% Ce were annealed at temperatures from 500 °C to 1200 °C in air ambient, and were annealed in different ambient at 1100 °C. Ce-related photoluminescence was observed in films sensitive to the Ce concentrations, annealing temperatures and the annealing ambient. The peak intensity of the photoluminescence band is approximately linear with Ce concentrations. Also, the photoluminescence intensity is dependent on the annealing temperatures and reaches its highest value after annealing at 700 °C. In addition, the experimental results show that compared with the annealing in an air ambient, the photoluminescence intensity can be enhanced with nitrogen gas. There would be no obvious change for the photoluminescence position or shape.     

Effect of substrate temperature on few-layer graphene grown on Al2O3 (0 0 0 1) via direct carbon atoms deposition

Few-layer graphene (FLG) was grown on Al₂O₃ (0 0 0 1) substrates at different temperatures via direct carbon atoms deposition by using solid source molecular beam epitaxy (SSMBE) method. The structural properties were characterized by reflection high energy electron diffraction (RHEED), Raman spectroscopy and near-edge X-ray absorption fine-structure (NEXAFS). The results showed that the FLG started to form at the substrate temperature of 700 °C. When the substrate temperature increased to 1300 °C, the quality of the FLG was the best and the layer number was estimated to be less than 5. At higher substrate temperature (1400 °C or above), the crystalline quality of the FLG would be deteriorated. Our experiment results demonstrated that the substrate temperature played an important role on the FLG layer formation on Al₂O₃ (0 0 0 1) substrates and the related growth mechanism was briefly discussed.     

Graphene on ordered Ni-alloy surfaces formed by metal (Sn,Al) intercalation between graphene/Ni(111)

Deposition and intercalation of Al and Sn on Ni(111) supported graphene is investigated by Auger electron spectroscopy, low energy electron diffraction, and scanning tunneling microscopy. Al intercalates at ~ 200 °C while Sn intercalates at ~ 350 °C, indicating that the intercalation process is element specific. Both Al and Sn alloy with the Ni-substrate at higher annealing temperatures and form ordered alloy surfaces and surface alloys, respectively. Sn forms a (√3 × √3) R30° surface alloy by substituting surface Ni-atoms with Sn and thus the alloy maintains the same good lattice match with graphene as for Ni(111). Both Sn and Al are interacting weakly with graphene and can therefore be used to decouple graphene from the strongly interacting Ni substrate.     

Optical properties of PMN–PT thin films prepared using pulsed laser deposition

(1 ? x)Pb(Mg_1/3Nb_2/3)O₃–xPbTiO₃ (PMN–PT) thin films have been deposited on quartz substrates using pulsed laser deposition (PLD). Crystalline microstructure of the deposited PMN–PT thin films has been investigated with X-ray diffraction (XRD). Optical transmission spectroscopy and Raman spectroscopy are used to characterize optical properties of the deposited PMN–PT thin films. The results show that the PMN–PT thin films of perovskite structure have been formed, and the crystalline and optical properties of the PMN–PT thin films can be improved as increasing the annealing temperature to 750 °C, but further increasing the annealing temperature to 950 °C may lead to a degradation of the crystallinity and the optical properties of the PMN–PT thin films. In addition, a weak second harmonic intensity (SHG) has been observed for the PMN–PT thin film formed at the optimum annealing temperature of 750 °C according to Maker fringe method. All these suggest that the annealing temperature has significant effect on the structural and optical properties of the PMN–PT thin films.     

Densification and microstructure of lead zirconate titanate ceramics fabricated from a triol sol–gel powder

Lead zirconate titanate (PZT) nano-powder was prepared by a triol sol–gel process. X-ray diffraction and transmission electron microscopy results showed that as-synthesized amorphous powder started to crystallize at the calcination temperature above 500 °C. The crystalline powder was formed into pellets and sintered at temperatures between 900 and 1300 °C. Co-existence of tetragonal and rhombohedral phase was observed in all ceramics. Microstructural investigation of PZT ceramics showed that uniform grain size distribution with average grain size of ∼0.8–2.5 μm were received with sintering temperature up to 1200 °C. Further increasing the temperature caused abnormal grain growth with the grain as large as 13.5 μm. An attempt to optimize densification with uniform grain size distribution was also performed by varying heating rate and holding time during sintering. It was found that dense (∼97%) sol–gel derived PZT ceramic with uniform microstructure was achieved at 1100 °C with a heating rate of 5 °C min⁻¹ and 6 h dwell time.     

XPS investigation of vacuum annealed vertically aligned ultralong ZnO nanowires

The surface properties of vertically aligned ZnO nanowires grown by chemical vapour deposition on GaN using a gold layer as a catalyst are investigated by X-ray Photoelectron Spectroscopy as a function of annealing temperature in ultra high vacuum (UHV). The nanowires are 8.5 μm long and 60 nm wide. 87% of the surface carbon content was removed after annealing at 500 °C in UHV. Analysis of the gold intensity suggests diffusion into the nanowires after annealing at 600 °C. Annealing at 300 °C removes surface water contamination and induces a 0.2 eV upward band bending, indicating that adsorbed water molecules act as surface electron donors. The contaminants re-adsorbed after 10 days in UHV and the surface band bending caused by the water removal was reversed. The UHV experiment also affected the nanowires arrangement causing them to bunch together. These results have clear implications for gas sensing applications with ZnO NWs.     

Annihilation kinetics of defects induced by phosphorus ion implantation in silicon

Ion channeling and electrical characterization techniques have been used in order to study the effects of thermal annealing on phosphorus implanted silicon wafers. A low energy thermally activated process (0.15–0.28 eV) is clearly observed after annealing at low temperature (≤500 °C). This electrical activation mechanism is found to be well described by a local relaxation model involving point defect migration. It is shown that in order to achieve a complete electrical activation of the implanted impurities, an annealing must be performed at temperatures higher than 700 °C.     

Controlled fabrication of Si nanostructures by high vacuum electron beam annealing

Silicon nanostructures, called Si nanowhiskers, have been successfully synthesized on Si(1 0 0) substrate by high vacuum electron beam annealing (EBA). Detailed analysis of the Si nanowhisker morphology depending on annealing temperature, duration and the temperature gradients applied in the annealing cycle is presented. A correlation was found between the variation in annealing temperature and the nanowhisker height and density. Annealing at 935 °C for 0 s, the density of nanowhiskers is about 0.2 μm⁻² with average height of 2.4 nm grow on a surface area of 5×5 μm, whereas more than 500 nanowhiskers (density up to 28 μm⁻²) with an important average height of 4.6 nm for field emission applications grow on the same surface area for a sample annealed at 970 °C for 0 s. At a cooling rate of −50 °C s⁻¹ during the annealing cycle, 10–12 nanowhiskers grew on a surface area of 5×5 μm, whereas close to 500 nanowhiskers grew on the same surface area for samples annealed at the cooling rate of −5 °C s⁻¹. An exponential dependence between the density of Si nanowhiskers and the cooling rate has been found. At 950 °C, the average height of Si nanowhiskers increased from 4.0 to 6.3 nm with an increase of annealing duration from 10 to 180 s. A linear dependence exists between the average height of Si nanowhiskers and annealing duration. Selected results are presented showing the possibility of controlling the density and the height of Si nanowhiskers for improved field emission properties by applying different annealing temperatures, durations and cooling rates.     

Influence of rapid thermal annealing on electrical and structural properties of double metal structure Au/Ni/n-InP (1 1 1) diodes

The effect of rapid thermal annealing on the electrical and structural properties of Ni/Au Schottky contacts on n-InP have been investigated by current–voltage (I–V), capacitance–voltage (C–V), auger electron spectroscopy (AES) and X-ray diffraction (XRD) techniques. The Au/Ni/n-InP Schottky contacts are rapid thermally annealed in the temperature range of 200–500 °C for a duration of 1 min. The Schottky barrier height of as-deposited Ni/Au Schottky contact has been found to be 0.50 eV (I–V) and 0.86 eV (C–V), respectively. It has been found that the Schottky barrier height decreased with increasing annealing temperature as compared to as-deposited sample. The barrier height values obtained are 0.43 eV (I–V), 0.72 eV (C–V) for the samples annealed at 200 °C, 0.45 eV (I–V) and 0.73 eV (C–V) for those at 400 °C. Further increase in annealing temperature to 500 °C the barrier height slightly increased to 0.46 eV (I–V) and 0.78 eV (C–V) compared to the values obtained for the samples annealed at 200 °C and 400 °C. AES and XRD studies showed the formation of indium phases at the Ni/Au and InP interface and may be the reason for the increase in barrier height. The AFM results showed that there is no significant degradation in the surface morphology (rms roughness of 1.56 nm) of the contact even after annealing at 500 °C.     

Polymorphic phase transition and thermal stability in squaric acid (H2C4O4)

Phase transformations in squaric acid (H₂C₄O₄) have been investigated by thermogravimetry and differential scanning calorimetry with different heating rates β. The mass loss in TG apparently begins at onset temperatures T_di=245±5 °C (β=5 °C min^?1), 262±5 °C (β=10 °C min^?1), and 275±5 °C (β=20 °C min^?1). A polymorphic phase transition was recognized as a weak endothermic peak in DSC around 101 °C (T_c⁺). Further heating with β=10 °C min^?1 in DSC revealed deviation of the baseline around 310 °C (T_i), and a large unusual exothermic peak around 355 °C (T_p), which are interpreted as an onset and a peak temperature of thermal decomposition, respectively. The activation energy of the thermal decomposition was obtained by employing relevant models. Thermal decomposition was recognized as a carbonization process, resulting in amorphous carbon.     

Effect of annealing on natural calcitic crystals—A thermostimulated luminescence (TSL) study

The quality crystals (Calcitic limestone) were selected using the UV–visible methylene blue adsorption method. The thermostimulated luminescence (TSL) glow curve characteristics of six well crystallized limestone samples were analyzed. The glow curves of unannealed sample show only one peak in the range 320–330 °C. The sample irradiated with a gamma dose of 100 Gy shows two additional peaks in the range of 113–125 °C and 242–260 °C when recorded with linear heating rate of 10 °C/s. The annealed sample also shows the same trend as that of irradiated sample. Annealing treatment above 250 °C increases the sensitivity of all TSL peaks except 320 °C. On the other hand, annealing at 750 °C caused a collapse in the TSL sensitivity. The enhancement in TSL sensitivity was found to depend on the annealing temperature and time. Annealing treatment at 650 °C for 4 h followed by quenching in air is the optimum condition for TSL sensitization. The response to gamma irradiation is linear in the range from 0.5 Gy to 10⁴ Gy. The emission spectra of all the samples show an emission at around 610 nm but with different intensities for each TSL peak. With reference to earlier work, it may be assumed that the recombination site always involves Mn²⁺ ions. The observation made through infra-red (IR) and X-ray diffraction (XRD) studies with thermal treatment shows the structural changes of calcite from D_3h to C_s symmetry at 750 °C. The Thermogravimetric-Differential Thermal Analysis (TG-DTA) analysis shows the calcite gets disordered at 760 °C. Hence, the collapse in the TSL sensitivity at 750 °C is due to structural change or structural disorderedness.     

Synthesis of nanocrystalline ZnO nanobelts via pyrolytic decomposition of zinc acetate nanobelts and their gas sensing behavior

The pyrolytic decomposition of layered basic zinc acetate (LBZA) nanobelts (NBs) into nanocrystalline ZnO NBs is investigated using scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL). We also report on the gas sensing response of the resulting ZnO nanomaterial to CO. The LBZA NBs are grown at 65 °C in an aqueous solution of zinc acetate dihydrate. AFM and SEM results show as-grown products possess the characteristic layered structure of the LBZA crystals. XRD and XPS results show that annealing as-grown products at 210 °C in air causes a transformation from zinc acetate to nanocrystalline ZnO NBs via thermal decomposition. The ZnO crystalline domain size increases with temperature from 9.2 nm at 200 °C to 94 nm at 1000 °C, as measured from XRD. SEM shows evidence of sintering at 600 °C. The thickness of the NBs, determined via AFM, ranges from 10 to 50 nm and remains approximately constant with annealing temperature. XPS confirmed the chemical transformation from zinc acetate to ZnO and showed a significant remaining zinc hydroxide component for the ZnO NBs consistent with published results. PL measurements at room temperature show a blue shift in peak emission as the nanobelts change from LBZA to ZnO at 200 °C. Above this transition temperature, the ZnO nanobelts possess strong band edge emission at 390 nm and little broad band emission in the visible region. The AFM and SEM images reveal that the crystallites within the nanobelts orientate in rows along the long axis during annealing. This structure provides a high surface area to volume ratio of aligned nanoparticles which is beneficial for gas sensing applications. Gas sensors fabricated from 400 °C annealed nanobelts showed a response of 1.62 when exposed to 200 ppm of CO in dry air at 400 °C, as defined by the ratio of resistance before and during exposure. This indicates that ZnO nanostructures obtained by thermal decomposition of LBZA NBs could provide a cost effective route to high sensitivity gas sensors.     

Studies of Li intercalation of hydrogenated graphene on SiC(0001)

The effects of Li deposition on hydrogenated bilayer graphene on SiC(0001) samples, i.e. on quasi-freestanding bilayer graphene samples, are studied using low energy electron microscopy, micro-low-energy electron diffraction and photoelectron spectroscopy. After deposition, some Li atoms form islands on the surface creating defects that are observed to disappear after annealing. Some other Li atoms are found to penetrate through the bilayer graphene sample and into the interface where H already resides. This is revealed by the existence of shifted components, related to H–SiC and Li–SiC bonding, in recorded core level spectra. The Dirac point is found to exhibit a rigid shift to about 1.25 eV below the Fermi level, indicating strong electron doping of the graphene by the deposited Li. After annealing the sample at 300–400 °C formation of LiH at the interface is suggested from the observed change of the dipole layer at the interface. Annealing at 600 °C or higher removes both Li and H from the sample and a monolayer graphene sample is re-established. The Li thus promotes the removal of H from the interface at a considerably lower temperature than after pure H intercalation.     

Photocatalytic property of colloidal TiO2 nanoparticles prepared by sparking process

Titanium oxide nanoparticles (NPs) were successfully prepared by sparking off two titanium tips into water for 1–5 h. The nanoparticle-dispersed water was obtained for further characterization. The transmission electron microscopy result shows that the particle size is in the range of 1–5 nm. The electron diffraction patterns and Raman spectra reveal that the as-prepared and the annealed samples at 250 °C are the anatase phase. However, the anatase–rutile phase transformation was observed from the samples at annealing temperature as low as 500 °C. The result of methylene blue-decoloration testing under sunbath suggests that the NPs have good photocatalytic property.     

The unusual variations of photoluminescence and afterglow properties in monoclinic ZrO2 by annealing

The raw ZrO₂ is annealed at 600–1550 °C for 6 h. It is found that the emission at 492 nm increases greatly when the annealing temperature is higher than 1200 °C and its afterglow shows a small improvement at 1200–1450 °C and a large enhancement after annealing at 1550 °C. The results that are obtained indicate that the impurity Ti⁴⁺ in ZrO₂ is efficiently reduced to Ti³⁺ when the temperature is higher than 1200 °C, and the increase of Ti³⁺ centers contributes to the large improvement of emission at 492 nm. The thermoluminescence shows that at least two types of traps with different depths (0.65 eV and 1.46 eV) corresponding to oxygen vacancies exist in monoclinic ZrO₂. After annealing at 1200–1450 °C, some new trap clusters related to oxygen vacancies and Ti³⁺ form and causes the small improvement of afterglow at 1200–1450 °C. The large improvement of afterglow after annealing at 1550 °C originates from the sharp increase of proper shallow traps (0.65 eV) in ZrO₂. Accordingly, we present the feasible interpretations and luminescence mechanisms of monoclinic ZrO₂ for our observations.     

Effect of annealing temperature on the characteristics of ZnO thin films

Effect of annealing temperature on characteristics of sol–gel driven ZnO thin film spin-coated on Si substrate was studied. The UV–visible transmittance of the sol decreased with the increase of the aging time and drastically reduced after 20 days aging time. Granular shape of ZnO crystallites was observed on the surface of the films annealed at 550, 650, and 750 °C, and the crystallite size increased with the increase of the annealing temperature. Consequently nodular shape of crystallites was formed upon increasing the annealing temperature to 850 °C and above. The current–voltage characteristics of the Schottky diodes fabricated with ZnO thin films with various annealing temperatures were measured and analyzed. It is found that, ZnO films showed the Schottky characteristics up to 750 °C annealing temperature. The Schottky diode characteristics were diminished upon increasing the annealing temperature above 850 °C. XPS analysis suggested that the absence of oxygen atoms in its oxidized state in stoichiometric surrounding, might be responsible for the diminished forward current of the Schottky diode when annealed above 850 °C.     

Characterization of Laves phase in Crofer 22 H stainless steel

This study investigated the effect of annealing temperature on the precipitation behavior of Crofer^® 22 H at 600 °C, 700 °C, and 800 °C. The grain size distribution, precipitate phase identification, and microstructure were analyzed using electron backscatter diffraction (EBSD) and energy dispersive X-ray spectroscopy (EDS). The morphology of Laves phase (Fe,Cr,Si)₂(Nb,W) precipitates having the Cr₂Nb structure changed from strip-like to needle-shaped as the annealing temperature was increased. The precipitates of the Laves phase also shifted from the grain boundaries to the grain interiors when the temperature was increased. However, the average grain size (150 μm) of the ferritic matrix did not significantly change at 600 °C, 700 °C, and 800 °C for 10 h.