Enhanced mobility and increased gas sorption capacity in thin film and nanoconduit confined polymers

Poly(tert butyl acrylate) (PTBA) is found to exhibit enhanced mobility when spun cast into thin films or impregnated into cylindrical anodic aluminum oxide (AAO) nanoscale pores. In a thin film configuration, the glass transition temperature of 20 nm thick PTBA is found to decrease almost 20 °C compared to the bulk. Consistent with this mobility increase, an increased volume fraction of interphase polymer leads to at least a 2.4 times viscosity reduction when PTBA is impregnated in 100 nm pores versus 200 nm pores. Such increases in mobility result in a 15‐fold increase in CO₂ permeability for an AAO confined geometry compared to a bulk film. © 2010 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 48: 434–441, 2010     

Fibrils separated from polyacrylonitrile fiber by ultrasonic etching in dimethylsulphoxide solution

A novel method for the separation of polyacrylonitrile (PAN) fibrils from fibers by ultrasonic etching in a 90 wt % aqueous dimethylsulphoxide (DMSO) solution at 75 °C ± 2 °C for 6 h with a frequency of 40 kHz is demonstrated. These fibrils with a diameter of about 450 nm were systematically investigated by field emission scanning electron microscopy (FESEM), high resolution transmission electron microscopy (HRTEM), and wide‐angle X‐ray diffraction (WAXD). It was found that the fibrils consisted of microfibrils with about 200 nm diameter, including periodic lamellae with thickness of 30–45 nm perpendicular to the fiber axis. The PAN fiber crystallinity and crystal size slightly decreased under the ultrasonic etching. © 2010 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 48: 617–619, 2010     

Thickness dependence of thermally induced changes in surface and bulk properties of Nafion® nanofilms

Thermally induced changes in surface wettability, dewetting behavior, and proton transport of “self‐assembled” nanothin Nafion^® films (4–300 nm) on SiO₂ substrate is reported. Thermal annealing induces switching of the surface wettability of 55 nm and thinner films from hydrophilic to super‐hydrophobic. Thickness dependence of this behavior is observed with higher annealing temperature required for lower thickness films, indicating highly restrictive mobility of Nafion^® ionomer as film thickness decreases. Dewetting is only observed for 4‐nm thin film. Significant suppression in proton conductivity upon thermal annealing was noted. Similarly, two other bulk properties, water uptake and swelling, were found to decrease upon annealing. This work reports a systematic examination of the thickness dependence of thermally induced changes in both surface and bulk properties of ultra‐thin Nafion^®. © 2016 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2016 , 54, 1267–1277     

Thermal properties and influence of orientation on crystalline morphologies in stereoblock polypropylene and related elastomers

Atomic force microscopy (AFM), small angle X‐ray scattering (SAXS), temperature modulated differential scanning calorimetry (TMDSC), variable heating rate DSC, an independent rapid heating rate method for melting points, and cyclic mechanical testing were used to study semicrystalline thermoplastic elastomeric polypropylenes (ELPPs) and related semicrystalline polyolefins including ethylene copolymers. Low crystallinity (ca., 9 and 15%) ELPP samples were studied by AFM in the nonoriented and melt‐oriented states. AFM images taken as a function of time after quenching of a melt‐drawn and highly nucleated film resolved details of secondary crystallization involving lateral growth on the ordered row‐nucleated structures. For nonoriented films, isothermal melt crystallization at high temperatures (110 °C) led to similar features for the two ELPPs. The dominant crystalline morphology studied by AFM consisted of small (several nm in width) granular crystallites organized into immature but large spherulites spanning tens of microns. A striking cross‐hatch morphology was detected in regions of the surface in 110 °C crystallized samples, which is contrasted with melt‐drawn films where row nucleated structures dominated the morphology in the film under no external stress. AFM was also used to monitor the morphological changes that occurred as the films were stretched at 25 °C. Break‐down of lamellae was observed, resulting in oriented narrow fibrils. Cyclic stress‐strain curves showed the expected result where lower crystallinity ELPPs had higher recoverable levels of set after both 100 and 500% elongation. TMDSC was used to resolve the broad melting and recrystallization regions in these low to medium crystallinity ELPP systems, and to contrast the results with ethylene copolymers. © 2010 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys, 2011     

Evolution of water vapor from indium-tin-oxide transparent conducting films fabricated by dip coating process

Tin-doped indium oxide In₂O₃ (indium-tin-oxide) transparent conducting films were fabricated on silicon substrates by a dip coating process. The thermal analysis of the ITO films was executed by temperature-programmed desorption (TPD) or thermal desorption spectroscopy (TDS) in high vacuum. Gas evolution from the ITO film mainly consisted of water vapor. The total amount of evolved water vapor increased on increasing the film thickness from approx. 25 to 250 nm and decreased by increasing the preparation temperature from 365 to 600°C and by annealing at the same temperature for extra 10 h. The evolution occurred via two steps; the peak temperatures for 250 nm thick films were approx. 100-120 and 205-215°C. The 25 nm thick films evolved water vapor at much higher temperatures; a shoulder at approx. 150-165°C and a peak at approx. 242°C were observed. The evolution temperatures increased by increasing the preparation and the annealing temperatures except in case of the second peak of the 25 nm thick films. The evolution of water vapor at high temperature was tentatively attributed to thermal decomposition of indium hydroxide, In(OH)₃, formed on the surface of the nm-sized ITO particles. This revised version was published online in August 2006 with corrections to the Cover Date.     

Influence of the annealing conditions on the polarization and electromechanical response of high‐energy‐electron‐irradiated poly(vinylidene fluoride trifluoroethylene) copolymer

In this study, we investigated the influence of annealing conditions before irradiation on the ferroelectric and electromechanical properties of uniaxially stretched high‐energy‐electron‐irradiated poly(vinylidene fluoride trifluoroethylene) (HEEIP) copolymer (68/32 mol %) films. For films annealed at one fixed temperature before the irradiation (one‐step annealing), the highest crystallinity, which was highly desirable for enhancing the electromechanical response, was obtained only for films annealed between 132 and 136 °C. In addition, annealing over 10 h in this temperature window resulted in a large increase in the crystal lamellar thickness, which was required for reducing the polarization hysteresis to a minimum in the HEEIP samples. For improvements in the mechanical qualities of the uniaxially stretched films, a two‐step annealing procedure was investigated; that is, before the irradiation, the films were first annealed at a lower temperature to release the mechanical stress in the films due to the stretching and then were annealed in the high‐temperature window to raise the crystallinity and crystalline size. The experimental results indicated that this approach could produce uniaxially stretched HEEIP films with much improved mechanical qualities. Furthermore, the uniaxially stretched HEEIP films with this two‐step annealing exhibited the same electromechanical response as or an even higher one than that from the one‐step‐annealed HEEIP films. © 2003 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 41: 797–806, 2003     

Impact of chain architecture (branching) on the thermal and mechanical behavior of polystyrene thin films

The modulus and glass transition temperature (T_g) of ultrathin films of polystyrene (PS) with different branching architectures are examined via surface wrinkling and the discontinuity in the thermal expansion as determined from spectroscopic ellipsometry, respectively. Branching of the PS is systematically varied using multifunctional monomers to create comb, centipede, and star architectures with similar molecular masses. The bulk‐like (thick film) T_g for these polymers is 103 ± 2 °C and independent of branching and all films thinner than 40 nm exhibit reductions in T_g. There are subtle differences between the architectures with reductions in T_g for linear (25 °C), centipede (40 °C), comb (9 °C), and 4 armed star (9 °C) PS for ≈ 5 nm films. Interestingly, the room temperature modulus of the thick films is dependent upon the chain architecture with the star and comb polymers being the most compliant (≈2 GPa) whereas the centipede PS is most rigid (≈4 GPa). The comb PS exhibits no thickness dependence in moduli, whereas all other PS architectures examined show a decrease in modulus as the film thickness is decreased below ～40 nm. We hypothesize that the chain conformation leads to the apparent susceptibility of the polymer to reductions in moduli in thin films. These results provide insight into potential origins for thickness dependent properties of polymer thin films. © 2011 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys, 2012     

Nitridation of Niobium Pentoxide Films in Ammonia by Rapid Thermal Processing

The feasibility of niobium oxynitride formation through nitridation of niobium pentoxide films in ammonia by rapid thermal processing (RTP) was investigated. Niobium films 200 and 500 nm thick were deposited by sputtering on Si(100) wafers covered by a 100 nm thick thermally grown SiO₂ layer. These as‐deposited films exhibited distinct texture effects. They were processed in three steps using an RTP system. The as‐deposited niobium films were first nitridated in an ammonia atmosphere at 1000 °C for 1 min and then oxidised in molecular oxygen at temperatures ranging from 400 to 600 °C. Those samples in which a single Nb₂O₅ phase was determined after oxidation were additionally nitridated in ammonia at 1000 °C for 1 min. Investigations show that surface roughness of the samples after oxidation of niobium films first nitridated in ammonia is lower than after direct oxidation of as‐deposited films in oxygen, although the niobium pentoxide phase formed after annealing was the same in both cases. We explain this result as being due to the large expansion of the niobium lattice during the direct oxidation of the niobium film in molecular oxygen and also to the high oxidation rate of the as‐deposited niobium film in oxygen. By incorporation of oxygen in the crystal lattice of niobium and rapid formation of niobium pentoxide, substantial intrinsic stress was built up in the film, frequently resulting in delamination of the film from the substrate. Nitrogen hinders the diffusion of oxygen in nitridated films, which leads to a decrease of the oxidation rate and thus slower formation of Nb₂O₅. Nitridation of the completely oxidised niobium films in ammonia leads to the formation of niobium oxynitride and niobium nitride phases.     

Large melting point depression of 2–3‐nm length‐scale nanocrystals formed by the self‐assembly of an associative polymer: Telechelic,pyrene‐labeled poly(dimethylsiloxane)

Large melting point depressions for organic nanocrystals, in comparison with those of the bulk, were observed in an associative polymer: telechelic, pyrene‐labeled poly(dimethylsiloxane) (Py‐PDMS‐Py). Nanocrystals formed within nanoaggregates of pyrenyl units that were immiscible in poly(dimethylsiloxane). For 5 and 7 kg/mol Py‐PDMS‐Py, physical gels resulted, with melting points exceeding 40 °C and with small‐angle X‐ray scattering peaks indicating that the crystals were nanoconfined, were 2–3 nm long, and contained roughly 18–30 pyrenyl dye end units. In contrast, 30 kg/mol Py‐PDMS‐PY was not a gel and exhibited no scattering peak at room temperature; however, after 12 h of annealing at ?5 °C, multiple melting peaks were present at 5–30 °C. © 2004 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 42: 3470–3475, 2004     

An Efficient Route to Nanostructured Tungsten Oxide Films with Improved Electrochromic Properties

An effective chemical route to nanostructured tungsten oxide films derived from a peroxopolytungstic acid (PTA)/thiourea precursor solution is demonstrated. The conventional procedure of preparing the precursor needs more than 24 h for well‐mixing and refluxing the PTA‐based solution, while the thiourea‐assisted approach takes less than 1 h to prepare the precursor solution because the excess hydrogen peroxide can be efficiently eliminated by oxidation of thiourea. With the precursor solution, tungsten oxide films are deposited by spin coating followed by high temperature annealing. The film annealed at 400 °C possesses a porous nanostructure of nanocrystalline tungsten oxide embedded in an amorphous tungsten oxide matrix, which arises from the gaseous species released through decomposition of thiourea oxides during annealing. The 400 °C‐annealed, thiourea‐assisted tungsten oxide film exhibits electrochromic (EC) properties superior to those of the film prepared without thiourea, including large transmittance modulation and coloration efficiency, fast response time and adequate reliability. When increasing the annealing temperature to 450 °C, the thiourea‐assisted tungsten oxide film is also porous but well‐crystallized and shows inferior EC properties. Electrochemical impedance spectroscopy analysis indicates that, in addition to the porous structure, a fast charge‐transport rate within the solid portion of the 400 °C‐annealed nanostructured film plays a crucial role in enhancing EC performances of the thiourea‐assisted tungsten oxide film.     

Density profile of spin cast polymethylmethacrylate thin films

The density profiles of polymethylmethacrylate (PMMA) thin films on silicon (111) single crystal wafers were investigated via neutron reflectivity measurements. Films were prepared by spin casting PMMA onto silicon wafers from o-xylene solution followed by annealing under vacuum at 90°C for 5 h. A ～45 Å thick layer at the free polymer surface was observed in the as-prepared samples that has a density about half the value of bulk PMMA. After heating above 110°C, this diffuse layer disappeared and the thin film density profile was transformed to one with a sharp free polymer surface. This transition was found to be irreversible. © 1994 John Wiley & Sons, Inc.     

Electrochromic material containing unsymmetrical substituted N,N,N′,N′‐tetraaryl‐1,4‐phenylenediamine: Synthesis and their optical,electrochemical, and electrochromic properties

A novel dibromo compound containing unsymmetrical substituted bi‐triarylamine was synthesized. A conjugated polymer was prepared via the Suzuki coupling from the newly prepared dibromo compound and 9,9‐dioctylfluorene‐2,7‐bis(trimethyleneboronate). The glass transition temperature (T_g) of the conjugated polymer was 140 °C, 10% weight‐loss temperatures (T_d10) in nitrogen was 458 °C, and char yield at 800 °C in nitrogen higher than 64%. Cyclic voltammogram of the polymer film cast onto an indium‐tin oxide (ITO)‐coated glass substrate exhibited two reversible oxidation redox couples at 0.70 and 1.10 V versus Ag/Ag⁺ in acetonitrile solution. The polymer films revealed excellent stability of electrochromic characteristics, with a color change from yellow green of the neutral form to the dark green and blue of oxidized forms at applied potentials ranging from 0 to 1.3 V. The color switching time and bleaching time were 4.25 and 7.22 s for 860 nm and 5.51 s and 6.48 s for 560 nm. © 2010 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 48: 1469–1476, 2010     

Structure and molecular conformation of tussah silk fibroin films treated with water–methanol solutions: Dynamic mechanical and thermomechanical behavior

The thermal response of tussah (Antheraea pernyi) silk fibroin films treated with different water–methanol solutions at 20°C was studied by means of dynamic mechanical (DMA) and thermomechanical (TMA) analyses as a function of methanol concentration and treatment time. The DMA curves of α-helix films (treated with ≥80% v/v methanol for 2 min and 100% methanol for 30 min) showed the sharp fall of storage modulus at about 190°C, and the loss peak in the range 207–213°C. The TMA curves were characterized by a thermal shrinkage at 209–211°C, immediately followed by an abrupt extension leading to film failure. Both storage and loss modulus curves significantly shifted upwards for β-sheet films, obtained by treatment with ≤60% methanol for 30 min. The loss peak exhibited a maximum at 236°C. Accordingly, the TMA shrinkage at above 200°C disappeared. The films broke beyond 330°C, failure being preceded by a broad contraction step. Intermediate DMA and TMA patterns were observed for the other solvent-treated films. The loss peak shifted to higher temperature (219–220°C), and a minor loss modulus component appeared at about 230°C. This coincided with the onset of a plateau region in the storage modulus curve. The TMA extension–contraction events in the range 200–300°C weakened, and the samples displayed a final broad contraction (peak temperature 326–338°C) before breaking. The DMA and TMA response of these films was attributed to partial annealing by solvent treatment, which resulted in the formation of nuclei of β-sheet crystallization within the film matrix. The increased thermal stability was probably due to the small β-sheet crystals formed, which acted as high-strength junctions between adjacent random coil and α-helix domains. © 1998 John Wiley & Sons, Inc. J Polym Sci B: Polym Phys 36: 2717–2724, 1998     

Structure and dielectric properties of HfO<Subscript>2</Subscript> films prepared by a sol–gel route

Mono- and multilayer HfO₂ sol–gel thin films have been deposited on silicon wafers by dip-coating technique using a solution based on hafnium ethoxide as precursor. The densification/crystallization process was achieved by classical annealing between 400 and 600 °C for 0.5 h (after drying at 100 °C). Systematic TEM studies were performed to observe the evolution of the thin film structure depending on the annealing temperature. The overall density of the films was determined from RBS spectrometry correlated with cross section (XTEM) thickness measurements. After annealing at 450 °C the films are amorphous with a nanoporous structure showing also some incipient crystallization. After annealing at 550 °C the films are totally crystallized. The HfO₂ grains grow in colonies having the same crystalline orientation with respect to the film plane, including faceted nanopores. During annealing a nanometric SiO₂ layer is formed at the interface with the silicon substrate; the thickness of this layer increases with the annealing temperature. Capacitive measurements allowed determining the value of the dielectric constant as 25 for four layer films, i.e. very close to the value for the bulk material.     

Study of a plasticized‐unoriented P(VF2/VF3) (73/27 mol%) copolymer. I. The effects of crystallization conditions on morphology,physical, and thermal properties

The results of a study on the effects of a plasticizer, tricresyl phosphate, on the mechanical and thermal properties of unoriented films of poly(vinylidene fluoride–trifluoroethylene) (VF₂/VF₃) copolymer (73/27 mol%) are presented. Films were prepared by both quenching and slow‐cooling from the melt with plasticizer concentrations of 0, 5, and 10% by weight. For the slow‐cooled films, a reduction in crystallinity by 25% was observed for the heavily plasticized films, together with a reduced dynamic mechanical modulus (≈ 58%) and an increased dielectric constant (≈ 200%). For the quenched films, a small increase in crystallinity was observed together with a reduced modulus and an increased dielectric constant. Measurements of the temperature dependence of the modulus and dielectric constant at 10 Hz. were also carried out from −100°C to 100°C. This data showed that for slow‐cooled films the glass transition temperature decreased from −28°C to ‐52°C at the highest doping level. DSC thermal analysis shows a decrease in the Curie transition (≈ 4°C) and melting temperatures (≈ 9°C) for the quenched films, while the slow‐cooled films only showed a decrease in melting temperature (≈ 10°C), while the Curie transition temperature was unaffected. In addition, evidence of a two‐phase system or a nonferroelectric crystal phase is noted by the presence of two Curie transition temperature peaks. © 1999 John Wiley & Sons, Inc. J Polym Sci B: Polym Phys 37: 19–28, 1999     

Effect of Annealing on the Electrical Properties of CuxS Thin Films

Copper sulphide CuS was deposited on three substrates; glass, Indium Tin Oxide (ITO) and Ti by using spray pyrolysis deposition (SPD). After depositing CuS thin films on the substrates at 200 °C, they were annealed at 50, 100, 150, and 200 °C for 1 hour. Structural measurements revealed covellite CuS and chalcocite Cu₂S phases for thin films before and after annealing at 200 °C with changes in intensities, and only covellite CuS phase for thin films after annealing at 50, 100, and 150 °C. Morphological characteristics show hexagonal-cubic crystals for the CuS thin film deposited on glass substrate and plates structures for films deposited on ITO and Ti substrates before annealing, these crystals became bigger in size and there were be oxidation and some agglomerations in some regions with formation of plates for CuS on glass substrate after annealing at 200 °C. For Hall Effect measurements, thin films sheet resistivity and mobility increased after annealing while the carrier concentration decreased. Generally, the thin film deposited on ITO substrate had the lowest resistivity and the highest carrier concentration before and after annealing. The thin film deposited on Ti substrate had the highest mobility before and after annealing, which makes it the best thin film for device performance. The objective of this research is to show the improvement of thin films electrical properties especially the mobility after annealing those thin films.     

Crystallinity of poly(3‐hexylthiophene) in thin films determined by fast scanning calorimetry

Using fast scanning calorimetry, we determined the crystallinity of thin films of poly(3‐hexylthiophene) crystallized from the melt from measurements of the specific melting enthalpy. A broad range of film thicknesses from 10 µm down to 26 nm was covered. The sample mass was determined from measurements of the specific heat capacity in the molten state allowing a quantitative analysis of the heat flow data. Films with a thickness 400 nm slowly cooled from the melt showed the same crystallinity as bulk samples measured with conventional DSC. Below 350 nm the melting enthalpy decreased strongly. We assign this strongly reduced crystallinity to the restricted crystallization kinetics originating from hindered spherulitic growth under thin film confinement. A higher crystallinity could be partially regained by extended isothermal crystallization at elevated temperatures. Much faster cooling, with rates above about 100 Ks^?1 led to a partial suppression of crystallization even for thick films. © 2016 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2016 , 54, 1791–1801     

Preparation of porous crosslinked polymers with different surface morphologies via chemically induced phase separation

A novel and simple method for producing crosslinked polymers with controlled surface morphology is demonstrated in this study. The porous crosslinked polymers were made via stepwise polymerization of a mixture of epoxy resin, D.E.R. 331, and diethylene triamine in diisobutyl ketone (DIBK). Both the surface and bulk morphology of the cured polymers are dependent on the solvent fraction of the reactive solution. When the concentration of DIBK was more than about 30 vol %, chemically induced phase separation (CIPS) occurred during cure at 30 °C, and closed spherical pores, about 4 μm in diameter, appeared in the bulk of the crosslinked polymers, whose diameter increased to about 4.5 and 9 μm when the solvent was increased to 40% and 50%, respectively. The surface morphology of the epoxy networks is different from that of the bulk. Smaller pore size or dense skin was formed via the CIPS process, which can be tailored by covering the reactive solution with different contacting films during cure. The competition between the solvent‐rich and polymer‐rich phase absorbed onto the surface of contacting film could change the surface morphology. Therefore, the porous crosslinked polymers having similar bulk morphology could be prepared with a variety of surface structures. © 2011 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys, 2011     

Thermal stability of porous it‐PMMA thin film obtained by the extraction of st‐PMAA from it‐PMMA/st‐PMAA stereocomplex with layer‐by‐layer assembly on a substrate

The functionality of porous isotactic (it) poly(methyl methacrylate) (PMMA) thin films, which were previously developed by the selective extraction of syndiotactic (st) poly(methacrylic acid) (PMAA) from the it‐PMMA/st‐PMAA stereocomplex thin film on a substrate using the layer‐by‐layer assembly method was investigated after thermal treatment (70, 80, and 90 °C) in water for 4 h. Quartz crystal microbalance analysis and infrared spectra measurements revealed that the st‐PMAA incorporation ability of the porous it‐PMMA thin film decreased in order at 80 and 90 °C, while there was no decrease observed at 70 °C. X‐ray diffraction analysis also supported the thermal stability of the porosity at 70 °C, whereas two it‐PMMA crystalline peaks (2θ = 9° and 14°) were generated during heating at 90 °C. The loss of the functionality of the it‐PMMA thin film was thus shown to be due to crystallization, which was caused by the increase in polymer‐chain mobility during the heating process. © 2010 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 48: 3265–3270, 2010     

Submicron films prepared from aqueous dispersions of nanoscale polymer crystals

Thin and ultrathin films of polyethylene of variable thickness are obtained from aqueous dispersions of prefabricated nanoscale crystals by spin‐coating. Continuous films with a thickness of only 15 nm, up to 220 nm, homogeneous over hundreds of μm, or assembled discontinuous monolayers of flat‐on lamella particles were prepared, depending on the solids content of the dispersion employed, as revealed by AFM and TEM. The morphology of melt‐recrystallized films was not affected by the surfactant present. Homogeneous continuous films without undesirable dewetting were retained upon melting and recrystallization of the films upon cooling, composed of polygonal spherulites for a thicker film (220 nm), randomly grown edge‐on lamella for a 40 nm film, and dominant flat‐on lamella for a 15 nm thick film. Annealing below T_m resulted in lamella thickening, without changes of crystal orientation or structure of the particle assemblies for discontinuous monolayers. Surfactant adsorbed to the nanocrystals in the aqueous dispersion desorbs at least partially during formation of the nascent films, and upon annealing below the melting point surfactant migrates to the film‐air interface to form aggregates, which can be removed by rinsing, during which the film stays intact and structurally unaltered as revealed, amongst others, by water contact angles. © 2009 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 47: 6420–6432, 2009