Surface core-level shifts for chlorine covered GaAs (1 1 0) surfaces

Photoemission measurements show that upon chlorine adsorption the Ga 3d surface core-level remains essentially unchanged whereas the As 3d level is shifted by 820 meV to higher binding energy changing the sign of the shift with respect to the bulk level. Chlorine is thus bound to As in a single chemisorption state. The shift is due to charge transfer. The adsorption does not change the surface relaxation.     

Effect of relaxation and decay of a charge transfer shakeup satellite on Auger-electron spectroscopy spectra and Auger-photoelectron coincidence spectroscopy spectra of adsorbates

An electron excited to an unoccupied part of adsorbate–substrate hybrid states in a chemisorbed molecule by a resonant core electron excitation or charge transfer (CT) shakeup may delocalize on time scale of core-hole decay so that the excited core-hole state relaxes partly or completely to a fully relaxed one. The Auger decay of the fully relaxed core-hole state via the relaxation of the excited one introduces an additional feature in the resonant Auger-electron spectroscopy (RAES) spectrum and the AES spectrum. However, the additional feature in the RAES spectrum is a normal AES spectrum by decay of the fully relaxed core-hole state, whereas the one in the AES spectrum is the AES spectrum by decay of the fully relaxed core-hole state broadened by the photoelectron spectroscopy (PES) CT shakeup satellite weighted by the branching ratio of the relaxation width. The discrepancies between the AES spectrum measured at high above the ionization threshold and the additional feature in the RAES spectrum consist of the symmetric-like part by the decay of the fully relaxed core-hole state via the relaxation of the CT shakeup state and the asymmetric part by the direct decay of the shakeup states. The asymmetric part increases with a decrease in the hybridization strength. This explains the variation with the hybridization strength in the discrepancies between the RAES spectra and the AES spectra of chemisorbed molecules such as CO/Ni, CO/Cu and CO/Ag. A comparison of the singles PES spectrum with the one measured in coincidence with the AES main line of a selected kinetic energy (KE) provides the delocalization rate of the excited electron in the CT shakeup state as a function of photoelectron KE. The coincidence measurement to obtain the partial singles PES spectrum is discussed.     

Phenol adsorption on surface-functionalized iron oxide nanoparticles: modeling of the kinetics,isotherm, and mechanism

Phenol adsorption from aqueous solution was carried out using uncoated and methyl acrylic acid (MAA)-coated iron oxide nanoparticles (NPs), having size <10 nm, as adsorbents. Batch adsorption studies revealed that the phenol removal efficiency of MAA-coated NPs (950 mg g^?1) is significantly higher than that of uncoated NPs (550 mg g^?1) under neutral to acidic conditions. However, this improvement disappears above pH 9. The adsorption data under optimized conditions (pH 7) were modeled with pseudo-first- and pseudo-second-order kinetics and subjected to Freundlich and Langmuir isotherms. The analysis determined that pseudo-second-order kinetics and the Freundlich model are appropriate for both uncoated and MAA-coated NPs (all R ² > 0.98). X-ray photoelectron spectroscopy analysis of pristine and phenol-adsorbed NPs revealed core-level binding energy and charge for Fe(2s) and O(1s) on the NP surfaces. The calculations suggest that phenol adsorption onto MAA-coated NPs is a charge transfer process, where the adsorbate (phenol) acts as an electron donor and the NP surface (Fe, O) as an electron acceptor. However, a physisorption process appears to be the relevant mechanism for uncoated NPs.     

Adsorption kinetics of the Cs–O activation layer on GaAs(1 0 0)

In this work, we study the adsorption of (molecular) oxygen on Cs-covered GaAs(1 0 0) surfaces at RT. The study took place in a multi-method UHV system using the techniques such as low energy electron diffraction (LEED), Auger electron spectroscopy (AES), work function measurements (WF), thermal desorption spectroscopy (TDS), secondary ion mass spectroscopy (SIMS) and electron stimulated desorption (ESD) spectroscopy in correlation with the photocurrent measurements. It is shown that the oxygen burrows under the Cs overlayer and interacts at low exposures with the GaAs substrate, whereas at higher exposures oxygen interacts also with Cs leading to Cs oxides. The maximum photocurrent appears after the WF minimum and before the oxidation of Cs. Our results support the dipolar model for the explanation of the negative electron affinity effect.     

Adsorption of glycine on a NiAl(1 1 0) alloy surface

The adsorption and desorption of glycine (NH₂CH₂COOH), vacuum deposited on a NiAl(1 1 0) surface, were investigated by means of Auger electron spectroscopy (AES), low energy electron diffraction (LEED), temperature-programmed desorption, work function (Δφ) measurements, and ultraviolet photoelectron spectroscopy (UPS). At 120 K, glycine adsorbs molecularly forming mono- and multilayers predominantly in the zwitterionic state, as evidenced by the UPS results. In contrast, the adsorption at room temperature (310 K) is mainly dissociative in the early stages of exposure, while molecular adsorption occurs only near saturation coverage. There is evidence that this molecularly adsorbed species is in the anionic form (NH₂CH₂COO⁻). Analysis of AES data reveals that upon adsorption glycine attacks the aluminium sites on the surface. On heating part of the monolayer adsorbed at 120 K is converted to the anionic form and at higher temperatures dissociates further before desorption. The temperature-induced dissociation of glycine (<400 K) leads to a series of similar reaction products irrespective of the initial adsorption step at 120 K or at 310 K, leaving finally oxygen, carbon and nitrogen at the surface. AES and LEED measurements indicate that oxygen interacts strongly with the Al component of the surface forming an “oxide”-like Al-O layer.     

LEED-Auger characterization of GaAs during activation to negative electron affinity by the adsorption of Cs and O

A combination of low energy electron diffraction (LEED) and Auger electron spectroscopy (AES) has been used to study the formation of the negative electron affinity (NEA) condition on surfaces of p-type, degenerate, (100) and (111) GaAs. Activation to NEA is achieved by adsorbing Cs and O onto atomically clean GaAs in repetitive cycles of first Cs and then O. Before activation, the clean GaAs surfaces exhibit their characteristic LEED patterns. However, once obtained, there is no significant correlation between the quality of these LEED patterns and the final activation. The adsorption of both Cs and O during activation to NEA is amorphous. Auger measurements have shown that the first photoemission maximum occurs after the adsorption of about a half monolayer of Cs. The initial O adsorption occurs on the GaAs surface between the Cs atoms. The adsorbed O interacts strongly with Cs at any stage during the activation. Peak photosensitivities, after completion of the Cs and O adsorptions, were in the range 400 to 1100 $\text{μA}\text{lumen}$. The final activation does not correlate with the quantity of Cs and O on the surface. The temperature dependence of the photosensitivity of NEA GaAs (100) activated at ?170°C has a broad maximum at about ?50°C and a subsidiary maximum at about 160°C. In addition, the photoemission at ?170°C can be either increased or decreased by having heated the sample up to 200°C, even though no Cs or O desorption has taken place. These results can be traced to changes in work function rather than to changes in bulk properties. While the LEED patterns from clean GaAs show no structural changes with temperature, such changes are observed when Cs is on the surface. It is suggested that changes both in photoemission and in LEED patterns are due to the temperature-induced mobility of Cs on GaAs. An atomic model for the NEA surface is discussed in terms of a layer of Cs and O atoms about 10 Å thick on the GaAs.     

The interaction of Cs and O2 on the basal plane of MoS2

The interaction of Cs and O₂ on MoS₂(0001) has been studied both in the alternate adsorption and the codeposition mode by LEED, AES, TDS and WF measurements at 170 and 300 K. Oxygen does not interact with Cs when θ_Cs?0.04 at 300 K or θ_Cs?0.08 at 170 K, where Cs is known to adsorb as strongly ionized, individual adatoms. The interaction at higher θ_Cs, where Cs is known to form clusters on MoS₂(0001), leads to clusters of a Cs/O complex characterized by a Cs(563 eV)/O(512 eV) Auger peak ratio of 1.1–1.3. The minimum WF is 2.1 eV at 300 and 170 K upon alternate adsorption, and 1.7 eV at both T upon codeposition. Upon heating, oxygen and Cs desorb independently, as no oxide desorption is observed. The Cs TDS spectrum is shifted to lower T in the presence of oxygen and a new desorption peak appears at ～ 880 K. The differences in the Cs/O interaction between MoS₂(0001) and other semiconductors and metals are attributed to the Cs clustering and the inertness of MoS₂(0001) to O₂ adsorption.     

X-Ray photoemission study of CuIr2S4: Ir3+-Ir4+ charge ordering and the effect of light illumination

We have studied the electronic structure of the spinel-type compound CuIr2S4 using x-ray photoemission spectroscopy (XPS). CuIr2S4 undergoes a metal-insulator transition (MIT) at approximately 226 K. In going from the metallic to insulating states, the valence-band photoemission spectrum shows a gap opening at the Fermi level and a rigid-band shift of approximately 0.15 eV. In addition, the Ir 4f core-level spectrum is dramatically changed by the MIT. The Ir 4f line shape of the insulating state can be decomposed into two contributions, consistent with the charge disproportionation of Ir3+:Ir4+=1:1. XPS measurements under laser irradiation indicate that the charge disproportionation of CuIr2S4 is very robust against photo-excitation in contrast to Cs2Au2Br6 which shows photo-induced valence transition.     

Cs/GaN(0001)吸附体系电子结构和光学性质研究

采用基于第一性原理的密度泛函理论平面波超软赝势方法计算了 1/4ML Cs原子吸附 (2 × 2) GaN(0001) 表面的吸附能、能带结构、电子态密度、电荷布居数、功函数和光学性质. 计算发现, 1/4ML Cs 原子在 GaN(0001) 表面最稳定吸附位为 N 桥位, 吸附后表面仍呈现为金属导电特性, Cs原子吸附GaN(0001)表面后主要与表面 Ga 原子发生作用, Cs6s 态电子向最表面 Ga 原子转移, 引起表面功函数下降. 研究光学性质发现, Cs 原子吸附 GaN(0001) 表面后, 介电函数虚部、吸收谱、反射谱向低能方向移动.     

Many-body effect in the N23-VV Auger-photoelectron coincidence spectroscopy (APECS) spectra of Ag metal

The coincidence N23-VV Auger-electron spectroscopy (AES) spectra and N23 photoelectron spectroscopy (PES) spectra of Ag metal are analyzed. Here NX is the notation for atomic shell Nx (X = 2, 3). The band-like feature in the coincidence N23-VV AES spectra is much more intense than that in the coincidence M45-VV ones because the potential in the delocalized two-hole state is less attractive than that in the localized one. The partial N23-VV super Coster–Kronig (sCK) transition rate depends critically on both the final-state potential and the sCK-electron kinetic energy (KE) because the KE is low, whereas the partial M45-VV Auger-transition rate is fairly independent of them because the KE is very high. As a result, the partial sCK-transition rate to the band-like state is enhanced compared to that to the atomic-like localized state. The low KE tail in the coincidence N23-VV AES spectra which is likely due to the sCK transition involving more than two electrons, is more enhanced than that in the coincidence M45-VV ones. This is due to the enhancement of the partial sCK-transition rate by the presence of extra holes in the final state. The sharp peaks of small intensity on the lower KE side of the main line in the coincidence N2 PES spectrum are tentatively attributed to the shakeup satellites.     

Els study of alkali metal adsorption on Ni(100)

Electron energy-loss spectra on clean and alkali-covered Ni(100) surfaces have been measured. The changes in the characteristic Ni(100) loss spectra in the presence of Na, K and Cs are interpreted as a result of large charge transfer to Ni. Alkali metal losses due to core-level excitation and plasmon excitations are also discussed.     

The adsorption of methyl iodide on uranium and uranium dioxide: Surface characterization using X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES)

The adsorption of methyl iodide on uranium and on uranium dioxide has been studied at 25 °C. Surfaces of the substrates were characterized before and after adsorption by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). The XPS binding energy results indicate that CH₃I adsorption on uranium yields a carbide-type carbon, UC, and uranium iodide, UI₃. On uranium dioxide the carbon electron binding energy measurements are consistent with the formation of a hydrocarbon, —CH₃-type moiety. The interpretation of XPS and AES spectral features for CH₃I adsorption on uranium suggest that a complex dissociative adsorption reaction takes place. Adsorption of CH₃I on UO₂ occurs via a dissociative process. Saturation coverage occurs on uranium at approximately two langmuir (1 L = 10^?6 Torr s) exposure whereas saturation coverage on uranium dioxide is found at about five langmuir.     

Nature of the well screened state in hard X-ray Mn 2p core-level photoemission measurements of La1-xSrxMnO3 films

Using hard x-ray (HX; hnu=5.95 keV) synchrotron photoemission spectroscopy (PES), we study the intrinsic electronic structure of La(1-x)Sr(x)MnO(3) (LSMO) thin films. Comparison of Mn 2p core-levels with soft x-ray (SX; hnu approximately 1000 eV) PES shows a clear additional well-screened feature only in HX PES. Takeoff-angle dependent data indicate its bulk (> or =20 A) character. The doping and temperature dependence track the ferromagnetism and metallicity of the LSMO series. Cluster model calculations including charge transfer from doping-induced states show good agreement, confirming this picture of bulk properties reflected in Mn 2p core-levels using HX PES.     

Anomalous adsorption of Cs on Pt(1 1 1)

The adsorption of Cs on Pt(1 1 1) surfaces and its reactivity toward oxygen and iodine for coverages θ_Cs?0.15 is reported. These surfaces show unusual “anomalous” behavior compared to higher coverage surfaces. Similar behavior of K on Pt(1 1 1) was previously suggested to involve incorporation of K into the Pt lattice. Despite the larger size of Cs, similar behavior is reported here. Anomalous adsorption is found for coverages lower than 0.15 ML, at which point there is a change in the slope of the work function. Thermal Desorption Spectroscopy (TDS) shows a high-temperature Cs peak at 1135 K, which involves desorption of Cs⁺ from the surface.The anomalous Cs surfaces and their coadsorption with oxygen and iodine are characterized by Auger Electron Spectroscopy (AES), TDS and Low Electron Energy Diffraction (LEED). Iodine adsorption to saturation on Pt(1 1 1)(anom)-Cs give rise to a sharp LEED pattern and a distinctive work function increase. Adsorbed iodine interacts strongly with the Cs and weakens the Cs-Pt bond, leading to desorption of Cs_xI_y clusters at 560 K. Anomalous Cs increases the oxygen coverage over the coverage of 0.25 ML found on clean Pt. However, the Cs-Pt bond is not significantly affected by coadsorbed oxygen, and when oxygen is desorbed the anomalous cesium remains on the surface.     

The origin of narrowing of the Si 2p coincidence photoelectron spectroscopy main line of Si(1 0 0) surface

The Si 2p photoelectron spectroscopy (PES) main line of Si(1 0 0) surface measured in coincidence with the singles (noncoincidence) Si L_2,3-VV Auger-electron spectroscopy (AES) elastic peak is calculated. The agreement with the experiment is good. The present work is the first many-body calculation of the experimental coincidence PES spectrum of solid surface. The narrowing of the coincidence Si 2p PES main line compared to the singles one is due to the mechanism inherent in the coincidence PES. The inherent mechanism is explained by a many-body theory by which photoemission and Auger-electron emission are treated on the same footing.     

The observation of surface sensitive M2,3 absorption edge shifts by Reflected Electron Energy Loss Spectroscopy (REELS)

We have observed that an electron beam of kinetic energy 100–200 eV is scattered from some transition metal surfaces like Ti, Fe and Ni with a strong resonant energy loss corresponding to the M_2,3 core-level excitation. Because of the low kinetic energy, the scattering is principally from the surface atomic layer, and core-level spectroscopy of just the surface atoms is therefore possible. Chemisorption of oxygen on these transition metals caused substantial shifts in the M_2,3 threshold energies which appear to be related to charge transfer bonding with the oxygen.     

Probing the interaction at the C60-SiC nanomesh interface

Synchrotron-based high-resolution photoemission spectroscopy (PES) and in situ scanning tunneling microscopy (STM) are used to investigate the interaction at the C₆₀-SiC nanomesh interface during the sequential deposition and subsequent desorption of C₆₀ molecules. A weak charge transfer occurs at the C₆₀-nanomesh interface, involving electrons transferring from nanomesh to C₆₀ overlayer. The interface interaction originated from the weak charge transfer at the C₆₀-nanomesh interface is stronger than C₆₀ intermolecular interaction (e.g., van-der-Waals force), facilitating the layer-by-layer growth for the first two layers of C₆₀ on SiC nanomesh. The highly corrugated nanomesh surface results in an anisotropic diffusion and high diffusion barrier of C₆₀ on top, and thereby leads to the formation of irregularly shaped C₆₀ islands under submonolayer condition. In contrast, C₆₀ diffusion on HOPG and Ag(1 1 1) surfaces is rather isotropic, resulting in the formation of hexagonally shaped C₆₀ islands with smooth domain boundaries. STM results show the partial desorption of C₆₀ molecules from the SiC nanomesh surface after annealing the 1 ML C₆₀ sample (complete wetting layer of C₆₀ on SiC nanomesh) at around 150 °C for 20 min. Thorough desorption of C₆₀ molecules and full recovery of the clean SiC nanomesh are observed after annealing at around 200 °C for 20 min. In situ PES and STM experiments clearly demonstrate that C₆₀ adsorption and desorption processes do not affect the underlying SiC nanomesh structure, revealing its thermal stability and chemical inertness to C₆₀ molecules.     

Charge accumulation layer in Cs,Ba/<Emphasis Type="Italic">n</Emphasis>-GaN(0001) ultrathin interfaces: Electronic and photoemission properties

Experimental studies and theoretical calculations of the photoemission from Cs/n-GaN(0001) and Ba/n-GaN(0001) ultrathin interfaces were carried out. The electronic properties of the interfaces were studied in situ using threshold photoemission spectroscopy under vacuum at a residual pressure of P ～ 5 × 10^?11 Torr. A new effect was revealed, namely, photoemission with a high quantum yield under excitation with light in the transparency region of GaN. It was shown that adsorption of Cs or Ba on n-GaN brings about the formation of a quasi-two-dimensional electron channel, i.e., a charge accumulation layer directly near the surface. The dependences of the photoemission spectra and work function on the thickness of Cs and Ba coatings were investigated. It was established that adsorption of Cs and Ba leads to a sharp decrease in the work function by ～1.45 and ～1.95 eV, respectively. The photoemission spectra were calculated, and parameters of the accumulation layer, such as the energy position of the layer below the Fermi level for different Cs and Ba coverages, were determined. It was demonstrated that the energy parameters of the accumulation layer on the n-GaN(0001) surface can be controlled by properly varying the Cs or Ba coverage. The layer thickness was found to reach a maximum for a cesium coverage of ～0.5 monolayer.     

Electronic structure and electrochemical properties of electrode material Li7−xMnN4

The electronic structure and the charge balance mechanism of the Li_7−xMnN₄ system were investigated by core-level electron energy loss spectroscopy. The spectra are strongly affected by configuration interactions and reveal the existence of a considerable amount of nitrogen 2p holes in the ground state. Based on the results, we conclude that the Li₇MnN₄ system can be classified into the charge transfer-type compounds. The systematic variation of the operating voltages versus Li/Li⁺ of the Li₇MnN₄ system and the other transition metal nitrides and oxides can be qualitatively explained by classification into the Mott–Hubbard and the charge transfer regimes.