Pruned optical banyan networks on vertical stacking scheme for faster connection establishment

In this paper, we address the issue of faster connection establishment in a large vertically stacked optical Banyan (VSOB) network. The best known global routing algorithm, which turns an N × N crosstalk-free VSOB network into a rearrangeably non-blocking one, has time complexity O (NlogN). This is quite large compared to O (NlogN) time complexity of a single plane banyan network, which is a self-routing network with very high blocking probability. For a large size of switching network this O (NlogN) time complexity may result unacceptably long delay. Therefore, an optical network with very low blocking probability and O (NlogN) time complexity will be useful. Previously proposed Plane Fixed Routing (PFR) algorithm has O (logN) time complexity but results in higher than 2% blocking probability with zero-crosstalk constraint for a network as large as 4096 × 4096 at full load. In this paper, first we propose the pruning of VSOB networks that reduces the hardware cost by almost 30%. The networks can still use the PFR algorithm and results in the same blocking probability. However, we show that the blocking probability can be reduced dramatically while keeping the optimum time complexity O (logN) by allowing only a small amount of crosstalk. Then, we propose a new kind of switching networks in which extra regular banyan planes have been added with the pruned VBOS (P-VSOB) networks. Necessary routing algorithms, namely, PFR_RS and PFR_LS show that this new switching network can reduce the blocking probability to very low value even with zero-crosstalk constraint while keeping the hardware cost 3almost the same as for P-VSOB networks. Both these algorithms also have time complexity O (NlogN).     

FTIR and diode laser spectroscopy of isobutylene: Analysis of the rotational structure in the v28 fundamental band

Rotational structure in the fundamental band of isobutylene has been examined at room temperature using a combination of FTIR and Pb-salt diode laser instruments. The highest spectral resolution for the FTIR measurements was 0.125 cm⁻¹. Even at this resolution however, rotational structure for the band could be observed and appeared to possess a very regular pattern. A preliminary spectral assignment was obtained using the Watson/Gora asymptotic approximation for a rigid oblate asymmetric rotor. Within this approximation, the band origin was determined to be 890.937 (4) cm⁻¹. Excited state rotational constants, without the inclusion of centrifugal distortions terms, are A = 0.3033(16), B = 0.2801(12) and C = 0.15362 (8) cm⁻¹ respectively. Finally, a full set of spectroscopic constants, including quartic centrifugal distortion constants, were obtained for the band by including the high resolution Pb-salt spectra.     

The quark model and b baryons

The recent observation at the Tevatron of (uub and ddb) baryons within 2 MeV of the predicted Σ_b-Λ_b splitting and of baryons at the Tevatron within a few mega electron volts (MeV) of predictions has provided strong confirmation for a theoretical approach based on modeling the color hyperfine interaction. The prediction of  = 5790-5800 MeV is reviewed and similar methods used to predict the masses of the excited states and . The main source of uncertainty is the method used to estimate the mass difference m_b-m_c from known hadrons. We verify that corrections due to the details of the interquark potential and to Ξ_b- mixing are small. For S-wave qqb states we predict , and . For states with one unit of orbital angular momentum between the b quark and the two light quarks we predict , and . Results are compared with those of other recent approaches.     

The 2ν4 overtone bands of FClO3

The high resolution infrared spectrum of the mono-isotopic species F³⁵Cl¹⁶O₃ has been studied in the region of the 2ν₄ overtone, from 2560 to 2680 cm⁻¹. The perpendicular component is strong and clearly observed while the parallel component is very weak and almost completely hidden by the perpendicular one. Their origins differ by 12.6 cm⁻¹, the being located at higher wavenumbers. The band is perturbed by the anharmonic interaction between the v₄ = 2, l₄ = ?2 and v₂ = v₄ = v₅ = 1, l₄ = l₅ = ±1 excited states, both of E symmetry. In total 3157 transitions have been assigned, 83% of these to , 12% to , and 5% to . The three bands have been analyzed simultaneously, taking into account the Fermi resonance effective between the excited states of E symmetry. The ro-vibration parameters of the excited states have been obtained, including the deperturbed band origins of and , at 2628.5890(4) and 2619.3342(5) cm⁻¹, respectively. The W₂₄₅ anharmonic constant is equal to 4.0161(4) cm⁻¹. The x₄₄+g₄₄ and x₂₄+x₄₅+g₄₅ anharmonicity constants have been derived from the obtained band origins and those of ν₄ and ν₂ + ν₅.     

Problems with power content beam parameter product

The M² beam propagation factor is widely used to characterize the quality of laser radiation and its propagation. When M² is defined by the second-moments, M² ? 1 holds in the paraxial approach. For many applications it is more convenient to use the power content values (normally η = 86.5%), also proposed by ISO. For the corresponding power content factor, it is often assumed that also holds. We have demonstrated previously that for a superposition of two coherent Gauss-Laguerre modes with radial symmetry, the 86.5% value of [6]. In recent years, has also been presented experimentally for a superposition of axially shifted Gaussian beams [7]. The problems with power content for axial superposition of Gaussian beams are discussed. In this paper it is shown that the 86.5% power content value can not be smaller than one for a coherent superposition of axially shifted Gaussian beams with radial symmetry presented in Ref. [7]. A superposition of two Gaussian beams with different waists and without shift is also discussed, and the corresponding of such beam can be smaller than one, depending strongly on the power content value η. For low power content values η and a large (or very small) ratio of the two different waists approaches zero. These investigations demonstrate that is not a suitable parameter to characterize laser radiation.     

Anisotropic characteristics of a-plane GaN films grown on γ-LiAlO2 (3 0 2) substrates by MOCVD

Single crystalline wurtzite a-plane GaN films were deposited on (3 0 2) LiAlO₂ (LAO) substrates by metal organic chemical vapor deposition (MOCVD). The high resolution X-ray diffraction (HRXRD) results and selected area electron diffraction (SAED) patterns in cross section indicated that the crystallographic orientation between LAO and wurtzite GaN was: [3 0 2]_LAO parallel to , parallel to and [0 1 0]_LAO parallel to [0 0 0 1]_GaN, the mismatches were −4.43%, −2.86% and −0.31%, respectively. When the incident beam parallel (or perpendicular) to the [0 0 0 1] direction of GaN, the FWHM values of ω-scans reached the minimum (or maximum). The a-GaN film was found to have steps along direction and strips coalesced parallel to [0 0 0 1] direction. The PL intensity of the emission peak around 364 nm reduced a lot when the polarization changed from E⊥c to E||c.     

Repulsive and bound parts of the interatomic potentials of the lowest singlet electronic energy states of the MeRg complexes (Me = Zn, Cd; Rg = He, Ne, Ar, Kr, Xe)

Laser-induced fluorescence excitation spectra of MeRg (Me = Zn, Cd; Rg = He, Ne, Ar, Kr, Xe) complexes were recorded using the D¹ ← X¹ free ← bound transition. The complexes were produced in their ground state in a free-jet expansion beam and excited with a dye-laser beam directly to the excited state. Analysis of free ← bound unstructured profiles provided a shape of the repulsive part of the D¹-state potentials. Valence ab initio calculations of the ZnRg and CdRg ground- and excited-state potentials and electronic transition dipole moments for the studied transition were performed, taking scalar relativistic and spin-orbit effects into account. Results of the calculations show regularities and correlations in the repulsive branches and bound wells of the X¹- and D¹-state potentials as well as provide information on the bonding character in both electronic energy states. The trends were compared with available experimental results for ZnRg and CdRg as well as for MgRg and HgRg.     

Laser excitation spectrum of C3 in the region 26 000-30 700 cm

The vibrational structure of the electronic state of C₃ in the region 26 000-30 775 cm⁻¹ has been re-examined, using laser excitation spectra of jet-cooled molecules. Rotational constants and vibrational energies have been determined for over 60 previously-unreported vibronic levels; a number of other levels have been re-assigned. The vibrational structure is complicated by interactions between levels of the upper and lower Born-Oppenheimer components of the state, and by the effects of the double minimum potential in the Q₃ coordinate, recognized by Izuha and Yamanouchi [16]. The present work shows that there is also strong anharmonic resonance between the overtones of the ν₁ and ν₃ vibrations. For instance, the levels 2 1⁺ 1 and 0 1 ⁺ 3 are nearly degenerate in zero order, but as a result of the resonance they give rise to two levels 139 cm⁻¹ apart, centered about the expected position of the 2 1⁺ 1 level. With these irregularities recognized, every observed vibrational level up to 30 000 cm⁻¹ (a vibrational energy of over 5000 cm⁻¹) can now be assigned. A vibronic level at 30181.4 cm⁻¹, which has a much lower B′ rotational constant than nearby levels of the state, possibly represents the onset of vibronic perturbations by the electronic state; this state is so far unknown, but is predicted by the ab initio calculations of Ahmed et al. [36].     

Substantially low desorption barriers in recombinative desorption of deuterium from a Si(1 0 0) surface

We have studied desorption kinetics of deuterium molecules from a Si(1 0 0) surface by means of temperature-programmed desorption (TPD) spectra and isothermal desorptions.Three desorption components, denoted as β_1,A,β_1,B, and C, can be distinguished in semi-logarithmic plots of the TPD spectra.Their peak positions and intensities are strongly affected by the surface preparation methods employed, either with or without annealing to control the initial D coverage .Peak C appears at the leading edge of the TPD peak.It accounts for only about 5% of the TPD peak at and it diminishes rapidly with decreasing , vanishing at .In contrast, together the β_1,A and β_1,B peaks account for the whole TPD peak at any less than 1.0 ML. The maximum of the β_1,A peak is nearly constant at around the maximum temperature of the TPD peak.On the other hand, the β_1,B peak appears on the high-temperature side of the TPD peak and it systematically shifts to higher temperatures with decreasing .These results imply that first- and second-order kinetics are operating for the β_1,A and β_1,B desorptions, respectively.Isothermal desorption experiments confirm the above predicted kinetics for a limited region, namely .From the results for the rate curve analysis, the desorption barriers are evaluated to be 1.6 ± 0.1 eV and 1.8 ± 0.1 eV for the β_1,A and β_1,B desorptions, respectively.These values are substantially lower than the widely accepted value of ∼2.5 eV. To reproduce the measured TPD spectra we take the Arrhenius-type rate equation containing the first- and second-order rate terms for the β_1,A and β_1,B desorptions.The TPD spectra measured for can be reasonably fit with the proposed rate equation when the values given above for E_d,A and E_d,B are used. For , however, the TPD curves are not fit with the same values; rather, the best-fit curves require values for E_d,A and E_d,B larger than those given above. Combining the present kinetics results with those obtained by STM along with the studies, the β_1,A and β_1,B peaks may be attributed to desorption along the 2H path, while peak C may be attributed to desorption along the 4H path. The atomistic desorption mechanism as well as the energy relationship between the desorption barrier and isosteric heat of adsorption are discussed.     

Absorption spectra of AsH2 radical in 435-510 nm by cavity ringdown spectroscopy

The absorption spectra of jet-cooled AsH₂ radicals were recorded in the wavelength range of 435-510 nm by cavity ringdown spectroscopy. The AsH₂ radicals were produced by pulsed DC discharge in a molecular beam of a mixture of AsH₃, SF₆, and argon. Seven vibronic bands with fine rotational structures have been identified and assigned as the , , and (n = 1-3) bands of the electronic transition. Based on the previous studies of AsH₂ radical, rotational assignments and rotational term values for each band were obtained, and the molecular parameters including vibrational constants, rotational constants, centrifugal distortion constants, and spin-rotation interaction constants were also determined.     

Crystallisation progress in Si-rich ultra-soft nanocomposite alloy fabricated by melt spinning

The crystallisation process and the ultras-soft magnetic properties of amorphous/nanocomposite alloy Fe_73.5Si_17.5B₅Nb₃Cu₁ fabricated by conventional melt-spinning technique are systematically investigated in terms of thermal analysis and in-situ measurement of magnetisation dynamics. The thermal analysis using differential scanning calorimetry showed that crystallisation from Fe-based amorphous state to α-Fe(Si) started at . Further heating the sample leads to a transformation from the α-Fe(Si) to Fe-B phases at . Crystallisation activation energies were determined using two models: Kissinger and John-Mehl-Avrami (JMA), which were consistent to each other with a value of . High resolution transmission electron microscopy investigation revealed an ultrafine structure of α-Fe(Si) nanocrystallite with mean size of 12.5 nm embedded in an amorphous matrix. At a volume fraction of 86% of α-Fe(Si) phase, optimum soft magnetic properties were obtained with very high permeability of 110,000 and a very low coercivity of 0.015 Oe by annealing the amorphous alloy at in 40 min.     

A general formula of two-dimensional Franck-Condon integral and the photoelectron spectroscopy of sulfur dioxide

We derived a general formula of Franck-Condon integral for two-dimensional harmonic oscillators () taking into account the Duschinsky effect and applied it to study the photoelectron spectroscopy of SO₂ and . The equilibrium geometries and harmonic vibrational frequencies of , SO₂ and were calculated by using the density functional theory (B3LYP functional) and the coupled cluster singles and doubles with perturbative triples [CCSD(T)] methods with various basis sets up to 6-311+G(3df) and aug-cc-pVTZ. The adiabatic ionization energy and electron affinity were computed by using the CCSD(T) method extrapolated to the complete basis set limit with aug-cc-pVXZ (X = D, T, Q, 5). The simulated photoelectron spectra of both SO₂ and are in accord with the experiment. While the Duschinsky effect plays a role for some weak transitions of SO₂, it can be neglected for . A splitting observed in the experimental photoelectron spectrum of SO₂ is interpreted as contributing from hot bands and combination bands of ν₁ and ν₂, rather than arising from perturbation of a potential barrier as previous researchers proposed. The calculated adiabatic ionization energy and electron affinity are in agreement with the experiment within 0.027 and 0.040 eV, respectively.     

Density functional theory study of the near edge X-ray absorption fine structure and infrared spectroscopy of acetylene and benzene on group IV semiconductor surfaces

The near edge X-ray absorption fine structure and infrared spectroscopy of acetylene and benzene adsorbed on C(1 0 0)-2 × 1, Si(1 0 0)-2 × 1 and Ge(1 0 0)-2 × 1 surfaces is studied with density functional theory calculations. Time dependent density functional theory calculations of the near edge X-ray absorption fine structure with a modified exchange-correlation functional agree well with experiment, and show that the spectral features arise from excitation to π^∗, and orbitals, where X represents C, Si or Ge. The excitation energies are dependent on the surface, and for acetylene, the location of the π^∗ band also varies with the surface. Calculations of the vibrational modes show the CH stretching frequencies for carbon atoms bonded directly to the surface vary significantly between the three surfaces, while those for carbon atoms not bonded to the surface do not change significantly.     

Stable surface termination on vicinal 6H-SiC(0 0 0 1) surfaces

Ordered nanofacet structures on vicinal 6H-SiC(0 0 0 1) surfaces, consisting of pairs of a (0 0 0 1) basal plane and a facet, are investigated in terms of stable surface stacking of the (0 0 0 1) basal planes. The surface termination of S3 (or S3*), i.e., ABC (or A*C*B*), was suggested by a structural model based on quantized step-bunching, which typically gives a one-unit-cell bunched step configuration at the facet. Here, we evaluate the surface termination at basal planes covered with a layer of silicon oxynitride by means of quantitative low-energy electron diffraction (LEED) analysis combined with scanning tunneling microscopy (STM), and show the validity of the structural model proposed.     

Vibronic spectra, ab initio calculations, and structures of conformationally non-rigid molecules of oxalyl halides in the ground and lowest excited electronic states. Part I: Reanalysis of the 3680 Å and 4100 Å absorption systems of oxalyl chloride

The vapor-phase absorption spectrum of oxalyl chloride in the 3000-4180 Å region has been re-examined at high resolution. Singlet-singlet and singlet-triplet electronic transitions of the trans-conformer found in the spectrum are in agreement with earlier works [W.J. Balfour, G.W. King, J. Mol. Spectrosc. 26 (1968) 384-397; ibid. 27 (1968) 432-442]. Torsion levels of trans-oxalyl chloride in the ground and excited and states were found for the first time. Ab initio calculations of structures for conformers of oxalyl chloride in the ground and lowest excited electronic states explain the absence of second conformer transitions in the vibronic absorption spectrum.     

Surface reconstructions on InN and GaN polar and nonpolar surfaces

We report a systematic and comprehensive computational study of surface reconstructions on GaN and InN surfaces in various orientations, including the polar c plane as well as the nonpolar a and m planes. For GaN we have identified several new metallic reconstructions under highly Ga-rich conditions on the nonpolar planes. For InN we find several distinct differences from the GaN case: the absence of a nitrogen-adatom reconstruction on the (0 0 0 1) plane; the presence of a single, metallic reconstruction over the entire stability range on the plane; and In-adlayer reconstructions on the (m) plane. An interesting “inverted polarity” defect structure on the (m) plane is also revealed.     

The magnetocaloric effect and low temperature specific heat of SmNi

The magnetocaloric effect (MCE) in a magnetic SmNi sample was evaluated from magnetization and heat capacity measurements. The MCE phenomena in the vicinity of magnetic phase transitions in terms of magnetic entropy change, , and adiabatic temperature change, , are reported. Isothermal magnetization measurements at several temperatures around the transition were carried out and used for versusT calculations. A similar dependence of the magnetic entropy change was evaluated from heat capacity C_p(T) measurements under zero field and 5 T. The SmNi system provides magnetic refrigerants that induce an adiabatic cooling of about during the magnetization process with a field of 5 T in the temperature range of 35-45 K. The temperature dependence of C_p(T) is analyzed in terms of the magnetic and the lattice contributions.     

Phase discrimination of iron-silicides on Si(0 0 1) surfaces by three-dimensional reciprocal-lattice mapping

Various iron-silicides are grown on clean Si(0 0 1) surfaces by solid phase epitaxy, a process which involves the deposition of iron and subsequent annealing [6]. Among them, we studied the structure of three-dimensional (3D) elongated islands, which are the major silicide type produced at lower Fe coverage (∼1 monolayer) and ?500-600 °C annealing. We applied a newly developed method of azimuth-scan reflection high-energy electron diffraction (RHEED) to obtain 3D reciprocal-lattice mapping. We succeeded in discriminating an α-FeSi₂ phase from controversial bulk phases of the islands, and we were also able to determine the orientation relation as and , where the lattice mismatches are −1% in direction and +34% in direction. The attenuation of the incident electron beam along the length direction of the islands leads to extremely weak spots in the RHEED pattern. We emphasize that such an analysis of the reciprocal-lattice mapping is also useful in studying other 3D island structures. Using scanning tunneling microscopy, we showed that the island’s elongated directions are perpendicular to the dimer rows of the substrate located under the islands. The islands are located near the S_B step edges. The elongation lengths of the islands are almost the same as the widths of the Si substrate terraces. We discussed the formation mechanism of the 3D-elongated islands. From an atomic image of the facet and edge of a 3D-elongated island, we proposed an atomic-structure model of the island facet and edge: a Si adatom on the hollow site of four Si atoms of an unit, with ordering in the direction of the elongation, forming an facet locally.     

Quantum critical behaviour in doped Y bB12 studied by ab initio calculations

The Kondo insulator Y bB₁₂ is known to undergo a transition to the metallic state with doping or under an external magnetic field. Within the virtual crystal approximation (VCA), we calculated the occupation of the Yb 4f and 5d shells, and , as a function of doping of Y bB₁₂ with the rare earths Tm and Lu. We found that exhibits an anomalous change at the critical concentration of the dopant, in agreement with experiment ( for Y b_1−xLu_xB₁₂ and for Y b_1−xTm_xB₁₂). We suggest that the critical behaviour seems to be strictly connected with the change of and in consequence the change of the Yb valency.