Wave-vector filtering effect of the electric-magnetic barrier in HgTe quantum wells

Because of the helicity of electrons in HgTe quantum wells(QWs) with inverted band structures,the electrons cannot be confined by electric barriers since electrons can tunnel the barriers perfectly without backscattering in the HgTe QWs.This behavior is similar to Dirac electrons in graphene.In this paper,we propose a scheme to confine carriers in HgTe QWs using an electric-magnetic barrier.We calculate the transmission of carriers in 2-dimensional HgTe QWs and find that the wave-vector filtering effect of local magnetic fields can confine the carriers.The confining effect will have a potential application in nanodevices based on HgTe QWs.     

Growth and studies of Hg1−xCdxTe based low dimensional structures

The band structure of HgTe quantum wells (QWs) has been determined from absorption experiments on superlattices in conjunction with calculations based on an 8×8 k·p model. The band structure combined with self-consistent Hartree calculations has enabled transport results to be quantitatively explained.Rashba spin–orbit, (SO) splitting has been investigated in n-type modulation doped HgTe QWs by means of Shubnikov–de Haas oscillations (SdH) in gated Hall bars. The heavy hole nature of the H1 conduction subband in QWs with an inverted band structure greatly enhances the Rashba SO splitting, with values up to 17 meV.By analyzing the SdH oscillations of a magnetic two-dimensional electron gas (2DEG) in modulation-doped n-type Hg_1−xMn_xTe QWs, we have been able to separate the gate voltage-dependent Rashba SO splitting from the temperature-dependent giant Zeeman splitting, which are of comparable magnitudes. In addition, hot electrons and Mn ions in a magnetic 2DEG have been investigated as a function of current.Nano-scale structures of lower dimensions are planned and experiments on sub-micrometer magneto-transport structures have resulted in the first evidence for ballistic transport in quasi-1D HgTe QW structures.     

Magnetic confinement of massless Dirac fermions in graphene

Because of Klein tunneling, electrostatic potentials are unable to confine Dirac electrons. We show that it is possible to confine massless Dirac fermions in a monolayer graphene sheet by inhomogeneous magnetic fields. This allows one to design mesoscopic structures in graphene by magnetic barriers, e.g., quantum dots or quantum point contacts.     

The robustness of the quantum spin Hall effect to the thickness fluctuation in HgTe quantum wells

The quantum spin Hall effect(QSHE) was first realized in HgTe quantum wells(QWs),which remain the only known two-dimensional topological insulator so far.In this paper,we have systematically studied the effect of the thickness fluctuation of HgTe QWs on the QSHE.We start with the case of constant mass with random distributions,and reveal that the disordered system can be well described by a virtual uniform QW with an effective mass when the number of components is small.When the number is infinite and corresponds to the real fluctuation,we find that the QSHE is not only robust,but also can be generated by relatively strong fluctuation.Our results imply that the thickness fluctuation does not cause backscattering,and the QSHE is robust to it.     

Many body effects and internal transitions of confined excitons in GaAs and CdTe quantum wells

Many body effects contribute significantly to the energy states of electron-hole pairs confined in quantum wells in the presence of excess electrons. We present results of optically detected resonance spectroscopy of the internal transitions of photo-excited electron-hole pairs in the presence of excess electrons for GaAs QWs and CdTe QWs. Compared to the case of isolated negatively charged excitons, excess electrons produce a large blue shift of the internal transitions in modulation-doped GaAs quantum wells (QWs) for filling factor <2, and similar effects are found in CdTe QWs. For filling factor >2 no internal transitions are observed. These measurements demonstrate the strong effects of electron-electron correlations on the internal transitions of charged excitons in these quasi-2D systems and the importance of magnetic translation invariance. In the presence of excess electrons, the observed internal transitions are those of a magnetoplasmon bound to a mobile valence band hole.     

Optoelectronic characteristics of CdTe/HgTe/CdTe quantum-dot quantum-well nanoparticles

Optoelectronic characteristics of CdTe/HgTe/CdTe quantum-dot quantum-well (QDQW) nanoparticles synthesized by the colloidal method are investigated in this study. Strong exciton bands were observed in absorption and photoluminescence (PL) spectra taken for the CdTe/HgTe/CdTe QDQW nanoparticles. The energy difference between the exciton absorption and PL bands is larger than those obtained with CdTe and HgTe nanoparticles. Photocurrent-voltage curves and time-dependent photocurrent curves were obtained for the CdTe/HgTe/CdTe QDQW nanoparticles. With regard to the photocurrent mechanism of these QDQW nanoparticles, those charge carriers participating in the formation of excitons may not contribute to the photocurrent, because of the large binding energy of the excitons. Moreover, it is suggested in this paper that free holes in the HgTe quantum-well in the valance band, rather than free electrons, are the main contributors to the photocurrent.     

Effects of Mg doping in the quantum barriers on the efficiency droop of GaN based light emitting diodes

The effects of Mg doping in the quantum barriers(QBs) on the efficiency droop of GaN based light emitting diodes(LEDs) were investigated through a duel wavelength method. Barrier Mg doping would lead to the enhanced hole transportation and reduced polarization field in the quantum wells(QWs), both may reduce the efficiency droop. However,heavy Mg doping in the QBs would strongly deteriorate the crystal quality of the QWs grown after the doped QB. When increasing the injection current, the carriers would escape from the QWs between n-GaN and the doped QB and recombine non-radiatively in the QWs grown after the doped QB, leading to a serious efficiency droop.     

Magnetic switching and spin filtering in an edge-state device based on HgTe waveguides

We investigate theoretically the edge channel transport in a HgTe waveguide modulated bytwo magnetic barriers. For an electron incident from a quantum-spin-Hall state in leads,the transmission can depend strongly on the relative orientation (parallel orantiparallel) of the two magnetic barriers as its energy is near the bulk conduction bandof leads. For the antiparallel configuration, the transmission is spin-independent and canbe suppressed drastically. For the parallel configuration, the electron can transmitnearly perfectly for a proper spin orientation. This contrast in transmission indicatesthat the proposed edge-state device may serve as a magnetic switch and a spin filter.     

Particle-in-cell simulation for different magnetic mirror effects on the plasma distribution in a cusped field thruster

Magnetic mirror used as an efficient tool to confine plasma has been widely adopted in many different areas especially in recent cusped field thrusters. In order to check the influence of magnetic mirror effect on the plasma distribution in a cusped field thruster, three different radii of the discharge channel(6 mm, 4 mm, and 2 mm) in a cusped field thruster are investigated by using Particle-in-Cell Plus Monte Carlo(PIC-MCC) simulated method, under the condition of a fixed axial length of the discharge channel and the same operating parameters. It is found that magnetic cusps inside the small radius discharge channel cannot confine electrons very well. Thus, the electric field is hard to establish. With the reduction of the discharge channel's diameter, more electrons will escape from cusps to the centerline area near the anode due to a lower magnetic mirror ratio. Meanwhile, the leak width of the cusped magnetic field will increase at the cusp. By increasing the magnetic field strength in a small radius model of a cusped field thruster, the negative effect caused by the weak magnetic mirror effect can be partially compensated. Therefore, according to engineering design, the increase of magnetic field strength can contribute to obtaining a good performance, when the radial distance between the magnets and the inner surface of the discharge channel is relatively big.     

Direct observation of the carrier transport process in InGaN quantum wells with a pn-junction

A new mechanism of light-to-electricity conversion that uses InGaN/GaN QWs with a p-n junction is reported.According to the well established light-to-electricity conversion theory,quantum wells(QWs) cannot be used in solar cells and photodetectors because the photogenerated carriers in QWs usually relax to ground energy levels,owing to quantum confinement,and cannot form a photocurrent.We observe directly that more than 95% of the photoexcited carriers escape from InGaN/GaN QWs to generate a photocurrent,indicating that the thermionic emission and tunneling processes proposed previously cannot explain carriers escaping from QWs.We show that photoexcited carriers can escape directly from the QWs when the device is under working conditions.Our finding challenges the current theory and demonstrates a new prospect for developing highly efficient solar cells and photodetectors.     

Effect of temperature and magnetic field on disorder in semiconductor structures

We present the results of consistent theoretical analysis of various factors that may lead to influence of temperature and external magnetic field on disorder in semiconductor structures. Main attention is paid to quantum well (QW) structures in which only QWs or both QW and barriers are doped (the doping level is assumed to be close to the value corresponding to the metal–insulator transition). The above factors include (i) ionization of localized states to the region of delocalized states above the mobility edge, which is presumed to exist in the impurity band; (ii) the coexistence in the upper and lower Hubbard bands (upon doping of QWs as well as barriers); in this case, in particular, the external magnetic field determines the relative contribution of the upper Hubbard band due to spin correlations at doubly filled sites; and (iii) the contribution of the exchange interaction at pairs of sites, in which the external magnetic field can affect the relation between ferromagnetic and antiferromagnetic configurations. All these factors, which affect the structure and degree of disorder, lead to specific features in the temperature dependence of resistivity and determine specific features of the magnetoresistance. Our conclusions are compared with available experimental data.     

Symmetry and spin dephasing in (110)-grown quantum wells

Symmetry and spin dephasing in (110)-grown GaAs quantum wells (QWs) are investigated applying magnetic field induced photogalvanic effect and time-resolved Kerr rotation. We show that magnetic field induced photogalvanic effect provides a tool to probe the symmetry of (110)-grown quantum wells. The photocurrent is only observed for asymmetric structures but vanishes for symmetric QWs. Applying Kerr rotation we prove that in the latter case the spin relaxation time is maximal; therefore, these structures set the upper limit of spin dephasing in GaAs QWs. We also demonstrate that structure inversion asymmetry can be controllably tuned to zero by variation of delta-doping layer positions.     

Interband and intraband radiation from the n-InGaAs/GaAs heterostructures with quantum wells under the conditions of injection in high lateral electric fields

The interband and intraband radiation from the n-InGaAs/GaAs heterostructures with the double and triple tunnel coupled and selectively doped quantum wells (QWs), which is appeared under the lateral electric field and in the presence of hole injection from the anode contact, has been investigated. A steep increase of the interband radiation intensity was found at the fields of E≥1.7 kV/cm. This effect should be related to the big lifetime of the injected charge carriers (~10⁻⁶ s) which exceeds by three orders of magnitude the lifetime in the similar bulk direct-band semiconductor. Its reason lies in spatial separation of the injected holes and electrons between coupled wells, firstly, by the built-in transverse electric field between wells and, secondly, due to the real-space transfer of carriers heated by the lateral electric field from the wide well to the narrow δ-doped one. Furthermore, an increase of the carrier concentration due to injection leads to an increase of that transition intensity and, consequently, to an intensity increase of the radiative intersubband transitions of carriers in QWs which results in a steep intensity increase of the far (50–120 µm) infrared radiation.     

Electro-absorption modulator using a type-II quantum well in the InxGa1 − xAs/InAlAs/InP system

In this paper photoluminescence measurements at low temperature under different excitation powers were carried out on an InGaAs tensile strained (x =  0.3) quantum well with InGaAs barriers lattice matched (LM) to InP. Evidence of a type-II recombination was found between carriers confined in the tensile layer and in the LM layer. This study allows us to deduce an accurate determination of the conduction band offset in the In_0.3Ga_0.7As/In_0.53Ga_0.47As/InP system. Moreover, we include the previous type-II structure between InAlAs barriers in order to confine both electrons and holes. This structure has potential applications in electro-optical modulators. We simulate its optical modulation by solving the Schrödinger equation using the envelope function approximation and calculating the absorption spectrum taking into account excitonic effects.     

Acoustically induced dynamic potential dots

Mobile potential dots (dynamic dots, DDs) formed by surface acoustic waves (SAWs) are used to transport photogenerated electrons and holes in GaAs quantum wells (QWs). We investigate the interaction between the transported carriers and microscopic trap centers in the QW plane using spatially and time-resolved photoluminescence (PL) spectroscopy. The carriers recombine at the trap site emitting short (width0.6 ns) light pulses at a repetition rate corresponding to the SAW frequency. The dependence of the PL intensity from the traps on the number of carriers transported per DD n exhibits a well-defined, distinct plateau for n in the range from 5–20, which is attributed to the emission of a well-defined number of photons.     

Effect of electron irradiation on the crystalline structure of hgte and hgl-xcdxte thin films

The influence of 8 MeV electrons on the crystalline structure of HgTe and Hg1-xCdxTe thin films was studied. HgTe and Hg1-xCdxTe layers were obtained by thermal evaporation and condensation in vacuum on optically flat silica glass substrates heated at different temperatures.

One finds that the results of irradiation of HgTe and Hg_1-xCd_xTe thin films with 8 MeV electrons depend on the preparation conditions of the samples, and therefore on the level of perfection of the crystalline structure and the quantity of nonstoichiometric atoms.     

Quantum Hall effect from the topological surface states of strained bulk HgTe

We report transport studies on a three-dimensional, 70-nm-thick HgTe layer, which is strained by epitaxial growth on a CdTe substrate. The strain induces a band gap in the otherwise semimetallic HgTe, which thus becomes a three-dimensional topological insulator. Contributions from residual bulk carriers to the transport properties of the gapped HgTe layer are negligible at mK temperatures. As a result, the sample exhibits a quantized Hall effect that results from the 2D single cone Dirac-like topological surface states.     

Magneto-optical study of nonmagnetic quantum dots coupled to a magnetic semiconductor quantum well

We have investigated a series of double-layer structures consisting of a layer of self-assembled non-magnetic CdSe quantum dots (QDs) separated by a thin ZnSe barrier from a ZnCdMnSe diluted magnetic semiconductor (DMSs) quantum well (QW). In the series, the thickness of the ZnSe barrier ranged between 12 and 40 nm. We observe two clearly defined photoluminescence (PL) peaks in all samples, corresponding to the CdSe QDs and the ZnCdMnSe QW, respectively. The PL intensity of the QW peak is observed to decrease systematically relative to the QD peak as the thickness of the ZnSe barrier decreases, indicating a corresponding increase in carrier tunneling from the QW to the QDs. Furthermore, polarization-selective PL measurements reveal that the degree of polarization of the PL emitted by the CdSe QDs increases with decreasing thickness of the ZnSe barriers. The observed behavior is discussed in terms of anti-parallel spin interaction between carriers localized in the non-magnetic QDs and in the magnetic QWs.     

Electrons and holes in HgTe and Hg0.82Cd0.18Te with controlled deviations from stoichiometry

The deviations from the stoichiometric composition of HgTe and Hg_0.82Cd_0.18Te crystals have been controlled by heat treatment under Hg vapor pressure. The magnetic field dependence of the Hall coefficient always shows the presence of two different sets of electrons and one set of holes. A low mobility electron is shown to belong to the conduction band. Vapor pressure dependence of hole concentration in HgTe shows that the concentration of nonstoichiometric defects decreases with increasing Hg vapor pressure, but the hole concentration is always higher than the electron concentration. In the case of Hg_0.82Cd_0.18Te, the electron concentration exceeds the hole concentration at high Hg vapor pressures. The dependence of the conduction band electron mobility in HgTe upon carrier density shows that the scattering by holes and impurities is predominant. In Hg_0.82Cd_0.18Te, however, optical phonon scattering is dominant when the deviation from stoichiometry is small and the effect of residual impurities can be neglected, and scattering by holes is dominant when the hole concentration is over $\text{10}{}^{17}\text{cm}{}^3$.     

A direct measurement of g-factors in II–VI and III–V core–shell nanocrystals

This study describes a direct measurement of spectroscopic g-factors of photo-generated carriers in InP/ZnS and HgTe/Hg_xCd_1−xTe(S) core–shell nanocrystals. The g-factor of trapped electrons and their spin-lattice versus radiative relaxation ratio (T₁/τ) were measured by the use of continuous-wave and time-resolved optically detected magnetic resonance (ODMR) spectroscopy. The g-factors of excitons and donor–hole pairs were derived by the use of field-induced circular-polarized photoluminescence (CP-PL) spectroscopy. The combined information enabled to determine the g-factors of the individual band-edge electrons and holes. The results suggested an increase of the g-factor of the exciton and conduction electron with a decrease of the nanocrystal size.