Electronic states in a step quantum well in a magnetic field

The quantum states and energy spectrum of an electron in a rectangular step quantum well in a magnetic field parallel to the plane of two-dimensional electronic gas are investigated. It is shown that the joint effect of a magnetic field and confining potential of quantum well results in radical change of the electron energy spectrum. The energy dependencies on the parameters of the quantum well and magnetic field induction are investigated. Numerical calculations are carried out for an AlAs/ GaAlAs/ GaAs/ AlAs step quantum well.     

量子阱中二维电子气的性质

利用提出的三维不对称方势阱模型，对半导体量子阱中二维电子气的性质进行了研究，确定其量子能级和费米能量，并对有关结果进行了讨论。     

Photon-Stimulated Transport in a Quantum Point Contact (Brief Review)

JETP Letters - Studies of photon-stimulated transport through a quantum point contact based on a high-mobility two-dimensional electron gas in a GaAs quantum well are reviewed. This review includes...     

Effect of electron-electron interaction on spin relaxation of charge carriers in semiconductors

An analysis of spin dynamics is presented for semiconductor systems without inversion symmetry that exhibit spin splitting. It is shown that electron-electron interaction reduces the rate of the Dyakonov-Perel (precession) mechanism of spin relaxation both via spin mixing in the momentum space and via the Hartree-Fock exchange interaction in spin-polarized electron gas. The change in the Hartree-Fock contribution with increasing nonequilibrium spin polarization is analyzed. Theoretical predictions are compared with experimental results on spin dynamics in GaAs/AlGaAs-based quantum-well structures. The effect of electron-electron collisions is examined not only for two-dimensional electron gas in a quantum well, but also for electron gas in a bulk semiconductor and a quantum wire.     

赝配InGaAs/InAlAs调制掺杂异质结构的Shubnikov-de Haas振荡

赝配InGaAs/InAlAs调制掺杂异质结构可以获得很高的电子气面密度和电子迁移率，从而可以制成具有优越高频和低噪声特性的高电子迁移率晶体管(HEMT).文中报道InGaAs/InAlAs调制掺杂异质结构低温下纵向和横向磁阻随磁场强度变化的Shubnikov-de Haas(SdH)振荡和量子Hall效应.对SdH振荡曲线作了快速傅里叶变换，获得了二维电子气的能带结构和各能带上的电子气面密度.分析比较了顶层InGaAs不同掺杂情况对SdH振荡的影响，结果发现顶层InGaAs重掺杂，会对表面态起屏蔽作用， 关键词：     

Spectroscopy of molecular states in a few-electron double quantum dot

Semiconductor quantum dots, so-called artificial atoms, have attracted considerable interest as mesoscopic model systems and prospective building blocks of the “quantum computer”. Electrons are trapped locally in quantum dots, forming controllable and coherent mesoscopic atom- and moleculelike systems. Electrostatic definition of quantum dots by use of top gates on a GaAs/AlGaAs heterostructure allows wide variation of the potential in the underlying two-dimensional electron gas. By distorting the trapping potential of a single quantum dot, a strongly tunnel-coupled double quantum dot can be defined. Transport spectroscopy measurements on such a system charged with N=0,1,2,… electrons are presented. In particular, the tunnel splitting of the double well potential for up to one trapped electron is unambiguously identified. It becomes visible as a pronounced level anticrossing at finite source drain voltage. A magnetic field perpendicular to the two-dimensional electron gas also modulates the orbital excitation energies in each individual dot. By tuning the asymmetry of the double well potential at finite magnetic field the chemical potentials of an excited state of one of the quantum dots and the ground state of the other quantum dot can be aligned, resulting in a second level anticrossing with a larger tunnel splitting. In addition, data on the two-electron transport spectrum are presented.     

Design and fabrication of a SiGe double quantum well structure for g-factor tuning

We propose a double quantum well device structure that allows for g-factor tuning by moving a two-dimensional electron gas between layers with different g-factors by applying a gate voltage. We present self-consistent model calculations showing that the electron wavefunction can be shifted almost completely in between the layers. We produced and characterized the double quantum well structure according the parameters from the optimum model calculations. First results are presented indicating that g-factor tuning really is possible within the envisioned device structure.     

Electron spin transitions in quantum Hall systems

A system of two-dimensional electron gas in a strong magnetic field exhibits a remarkable phenomenon known as the fractional quantum Hall effect. Rapid advances in experimental techniques and intense theoretical work for well over a decade have significantly contributed to our understanding of the mechanism behind the effect. It is now a well established fact that electron correlations are largely responsible for the occurrence of this phenomenon. In recent years, theoretical and experimental investigations have revealed that those electron correlations, which are responsible for the quantum Hall effect, are also the reason for various spin transitions in the system. In this review, we systematically follow the theoretical studies of the role spin degree of freedom play in the quantum Hall effect regime and also describe several ingenious experiments reported in recent years which are in good agreement with the emerging theoretical picture.     

Coherent spin dynamics of different density high mobility two-dimensional electron gas in a GaAs quantum well

We have addressed the dependence of quasi-two-dimensional electron spin dephasing time on the electron gas density in a 17-nm GaAs quantum well using the time-resolved magneto-optical Kerr effect. A superlinear increase in the electron dephasing time with decreasing electron density has been found. The degree of electron spin relaxation anisotropy has been measured and the dependence of spin-orbit splitting on electron gas density has been determined.     

Photoreflectance measurements in GaAs/AlGaAs asymmetric quantum wells

In this work we investigated the optical control of the bidimensional electron gas density in a single asymmetric quantum well using, for the first time, photoreflectance. We performed our measurements at 80 and 300 K as a function of the power density of the pump beam. Under strong illumination, the bidimensional electron gas density is washed out of the quantum well and under a dark condition, it reaches its maximum value. The variation of the optical transitions observed in our photoreflectance spectra was related to the induced changes of the band profile in between these two limiting cases.     

Polaron in an electron–exciton structure under the conditions of the Bose–Einstein condensation

A polaron state of an electron in a hybrid system composed of a two-dimensional electron gas and a Bose–Einstein condensate of excitons situated in a quantum well coplanar with the electron gas has been investigated. It has been shown that self-localization is possible even at a weak coupling between the components of the structure, when a fluctuation of the density of excitons producing a potential well for the electron is small compared to their average density.     

Two-dimensional electron gas in double quantum wells with tilted bands

When a voltage is applied to double quantum wells based on AlGaAs/GaAs heterostructures with contact regions (n-i-n structures), a two-dimensional (2D) electron gas appears in one of the quantum wells. Under illumination which generates electron-hole pairs, the photoexcited holes become localized in a neighboring quantum well and recombine radiatively with the 2D electrons (tunneling recombination through the barrier). The appearance, ground-state energy, and density of the degenerate 2D electron gas are determined from the structure of the Landau levels in the luminescence and luminescence excitation spectra as well as from the oscillations of the radiative recombination intensity in a magnetic field with detection directly at the Fermi level. The electron density is regulated by the voltage between the contact regions and increases with the slope of the bands. For a fixed slope of the bands the 2D-electron density has an upper limit determined by the resonance tunneling of electrons into a neighboring quantum well and subsequent direct recombination with photoexcited holes. Pis’ma Zh. éksp. Teor. Fiz. 65, No. 11, 840–845 (10 June 1997)     

Spacer layer thickness fluctuation scattering in a modulation-doped Al_xGa_1-xAs/GaAs/Al_xGa_1-xAs quantum well

We theoretically study the influence of spacer layer thickness fluctuation(SLTF) on the mobility of a twodimensional electron gas(2DEG) in the modulation-doped Al x Ga 1 x As/GaAs/Al x Ga 1 x As quantum well.The dependence of the mobility limited by SLTF scattering on spacer layer thickness and donor density are obtained.The results show that SLTF scattering is an important scattering mechanism for the quantum well structure with a thick well layer.     

外电场下应变量子阱中电子与空穴的本征态

考虑自发与压电极化引起的内建电场,自由电子-空穴气屏蔽效应和外加电场,基于常微分数值计算,自洽求解电子与空穴的薛定谔方程和泊松方程以获得基态能级。以典型的GaN/A lxGa1-xN纤锌矿氮化物应变量子阱为例,通过数值求解,得到电子与空穴的本征基态能和相应本征波函数。计算结果表明:沿量子阱生长方向所施加的外加电场将抵消阱中内建电场的作用,阱结构的弯曲程度略显平缓,使电子(空穴)本征波函数逆(顺)着外电场方向移动,且均向阱中心移动,波峰峰值增加,隧穿几率减小;在固定外电场情况下,电子与空穴基态能级随阱宽的增加而减小,随掺杂组分的增加而增加,表明外加电场对内建电场有所削弱以及量子限制作用对电子(空穴)基态能有显著的影响。     

Electron mobility limited by surface and interface roughness scattering in AlxGa1-xN/GaN quantum wells

The electron mobility limited by the interface and surface roughness scatterings of the two-dimensional electron gas in AlxGa1-xN/GaN quantum wells is studied. The newly proposed surface roughness scattering in the AlGaN/GaN quantum wells becomes effective when an electric field exists in the AlxGa1-xN barrier. For the AlGaN/GaN potential well, the ground subband energy is governed by the spontaneous and the piezoelectric polarization fields which are determined by the barrier and the well thicknesses. The thickness fluctuation of the AlGaN barrier and the GaN well due to the roughnesses cause the local fluctuation of the ground subband energy, which will reduce the 2DEG mobility.     

Single quantum well transistor with modulation doped AlGaAs/GaAs/AlGaAs structures

Self-consistent calculations have been performed to obtain the wave functions and energy subbands of the two-dimensional electrons confined in a single quantum well of a Al_xGa_1?xAs/GaAs/Al_xGa_1?xAs heterostructure. The wave functions of the two-dimensional electron gas are found to be easily controlled by an external gate voltage applied between the AlGaAs-barriers, indicating a capability of fabricating a novel quantum well device, a modulation-doped single quantum well transistor.     

Thickness effects on the Coulomb drag rate in double quantum layer systems

In this paper, we have investigated the effect of quantum layer thickness on Coulomb drag phenomenon in a double quantum well (DQW) system, in which the electrons momentum can transfer from one layer to another. We have applied the full random phase approximation (RPA) in dynamical dielectric matrix of this coupled two-dimensional electron gas (2DEG) system in order to obtain an improved result for temperature-dependent rate of momentum transfer. We have calculated the drag rate transresistivity for various well thicknesses at low and intermediate temperatures in Fermi-scale and for different electron gas densities. It has been obtained that the Coulomb drag rate increases with increasing the well width when the separation between the wells remains unchanged.     

Barrier penetration effects for electrons in quantum wells: screening,mobility, and shallow impurity states

A two-dimensional electron gas in a quantum well confined by finite barriers is considered. We present analytical expressions for the finite confinement effects of a square-well potential and calculate the electron-electron interaction potential, the electron-impurity interaction potential, the interface-roughness scattering potential and the alloy-disorder scattering potential. The dielectric function of the interacting electron gas, the mobility (for charged-impurity scattering, for interface-roughness scattering, and for alloy-disorder scattering), and the binding energy of hydrogenic impurities (screened and unscreened) are discussed.     

Transport theory for quantum wells with an electric field across the well: a new concept for a transistor

The transport properties of a two-dimensional electron gas in a quantum well with infinite barriers and with an electric field across the well as perturbation is calculated for zero temperature. Background impurity doping, remote impurity doping and interface roughness scattering are considered. The effects which are linear in the electric field are calculated. We suggest an experiment to measure the differences in the interface roughness scattering at the two interfaces of the quantum well by the electric field effect. We also discuss a possible device application of the field effect and describe a transistor working at the metal-insulator transition.     

Quantum well laser operation at low temperature in strong magnetic fields

Experimental results on quantum well laser operation in magnetic fields B < 12 T are reported. For B perpendicular (B_⊥) to the quantum well a sh?ft toward higher photon energy of ~ 0.5 meV/T is observed, with the laser threshold current decreasing significantly. In parallel magnetic fields (B∥) no significant effect is measured, thus confirming the built-in two-dimensional character of the electron gas.