Structure and stability of two-dimensional systems of C<Subscript>20</Subscript> fullerenes

Two-dimensional systems of C₂₀ fullerenes connected to each other by strong covalent bonds have been investigated. Several isomers differing in the type of intercluster bonds have been revealed. The lifetimes τ of the (C₂₀) _{M × M} complexes with M = 2 and 3 at T = 1800–3300 K have been directly calculated using the molecular dynamics method. It has been shown that these complexes lose their periodic cluster structure due usually to the coalescence of two or several neighboring C₂₀ fullerenes. The activation energy of this process determined by analyzing the τ(T) dependence appears to be E _a ≈ 2.5 eV in agreement with the calculations of the heights of the potential barriers preventing the coalescence. At high temperatures T > 2400 K, the decay of C₂₀ fullerenes entering into the complex is possible.     

Effect of heating of the electronic subsystem on the thermal stability of the C<Subscript>60</Subscript> and C<Subscript>20</Subscript> fullerenes and (C<Subscript>20</Subscript>)<Subscript>2</Subscript> cluster molecule

The effect of heating of the electronic subsystem on the thermal stability of C₆₀ and C₂₀ fullerenes and a (C₂₀)₂ cluster molecule is investigated theoretically. It is demonstrated that the excitation of electrons to upper energy levels in accordance with the Fermi-Dirac distribution function does not lead to a substantial change in the activation energy E _a for decay of the C₂₀ fullerene. The stability of the C₆₀ fullerene and the (C₂₀)₂ cluster molecule likewise does not change radically. However, the inclusion of corrections associated with the finite sizes of the heat bath leads to the activation energy E _a which is in better agreement with the calculated height of the potential barrier preventing the cluster decay.     

Rotation of the inner shell in a C<Subscript>20</Subscript>@C<Subscript>80</Subscript> nanoparticle

The stability of a C₂₀@C₈₀ nanoparticle and the rotation of its inner shell are studied theoretically within the tight-binding approximation. It is found that the C₂₀ skeleton in the free state is described by space group D_3d; in the case where C₂₀ is placed into the C₈₀(I _h ) fullerene field, the space group of C₂₀ is raised to I _h due to isomerization. The total energy surface of the C₂₀@C₈₀ compound is scanned over two rotation angles. Based on an analysis of the surface relief and energy isoline map, orientational melting of the nanoparticle is predicted. A nanoparticle gyroscope—C₂₀ rotating in the field of C₈₀ at a certain relative orientation and energy supply—is also predicted to exist.     

Stability of C<Subscript>20</Subscript> fullerene chains

The stability of (C₂₀)_N metastable chains, where C₂₀ fullerenes are joined by tight covalent bonds, is analyzed by numerical simulation using a tight-binding potential. Various channels of losing the chain-cluster structure of the (C₂₀)_N complexes have been determined including the decay of the C₂₀ clusters, their coalescence, and the separation of one C₂₀ fullerene from a chain. The lifetimes of the (C₂₀)_N chains with N = 3–7 for T = 2000–3500 K are directly calculated by the molecular dynamics method. It has been shown that, although the stability of the chains decreases with an increase in N, it remains sufficiently high even for N ? 1. An interesting lateral result is the observation of new (C₂₀)_N isomers with the combination of various intercluster bonds with the maximum binding energy of fullerenes in the chain.     

Crystallographic characteristics and phase transitions in the [N(C<Subscript>2</Subscript>H<Subscript>5</Subscript>)<Subscript>4</Subscript>]<Subscript>2</Subscript>CdBr<Subscript>4</Subscript> crystal in the low-temperature range

The results of x-ray structural studies of the [N(C₂H₅)₄]₂CdBr₄ crystal at low temperatures are presented. The unit cell parameters and the thermal expansion coefficients along the main crystallographic directions are measured at temperatures in the range from 90 to 320 K. The integrated intensities of the diffraction reflections are investigated as a function of the temperature. It is shown that the curves a = f(T), c = f(T), I ₅₀₀ = f(T), and I ₀₀₆ = f(T) at temperatures T ₁ ≈ 174 K and T ₂ ≈ 226 K exhibit anomalies in the form of abrupt changes in the lattice parameters and the diffraction reflection intensities. This indicates that the [N(C₂H₅)₄]₂CdBr₄ crystal undergo phase transitions at these temperatures. Moreover, there is an anomaly in the form of a small maximum at the temperature T ₃ = 293 K.     

Pressure-induced antiferromagnetism in La<Subscript>0.75</Subscript>Ca<Subscript>0.25</Subscript>MnO<Subscript>3</Subscript> manganite

The crystal and magnetic structures of La_0.75Ca_0.25MnO₃ manganite are studied under high pressures up to 4.5 GPa in the temperature range 12–300 K by the neutron diffraction method. At normal pressure and temperature T _C = 240 K, a ferromagnetic state is formed in La_0.75Ca_0.25MnO₃. At high pressures P ≥ 1.5 GPa and at temperatures T < T _N ≈ 150 K, a new A-type antiferromagnetic state appears. A further increase in pressure leads to an increase in the volume fraction of the antiferromagnetic phase, which coexists with the initial ferromagnetic phase. The effect of high pressure causes a considerable increase in T _C with the slope dT _C /dP ≈ 12 K/GPa. Calculations performed in the framework of the double exchange model with allowance for the electron-phonon interaction make it possible to explain this pressure dependence of T _C on the basis of experimental data.     

Low-temperature anomalies in the specific heat and thermal conductivity of MgB<Subscript>2</Subscript>

The temperature dependences of the specific heat C(T) and thermal conductivity K(T) of MgB₂ were measured at low temperatures and in the neighborhood of T _c . In addition to the well-known superconducting transition at T _c ≈40 K, this compound was found to exhibit anomalous behavior of both the specific heat and thermal conductivity at lower temperatures, T≈10–12 K. Note that the anomalous behavior of C(T) and K(T) is observed in the same temperature region where MgB₂ was found to undergo negative thermal expansion. All the observed low-temperature anomalies are assigned to the existence in MgB₂ of a second group of carriers and its transition to the superconducting state at T_c2≈10?12 K.     

Electronic structure and energies of interatomic bonds in the TiSi<Subscript>2</Subscript> compound with a <Emphasis Type="Italic">C</Emphasis>49 crystal structure

Full-electron calculations of the electronic structure of the TiSi₂ compound in the structural modification C49 are performed using the augmented-plane-wave method. The total energy, the electronic band structure, and the density of states are calculated for an extended translational unit cell Ti₄Si₈, which is formed during the growth of a silicon nanowire on a p-Si substrate. Calculations are also carried out for two orthorhombic unit cells of the nonstoichiometric compositions Ti₃Si₉ and Ti₅Si₇. The energies of the interatomic bonds are determined to be E _Si-Si = 1.8 eV, E _Ti-Ti = 2.29 eV, and E _Ti-Si = 4.47 eV. The dependence of the total energy of the unit cell E _tot(V) on the unit cell volume V is obtained by optimizing the unit cell volume. The bulk modulus B ₀ = 132 GPa is determined from the Murnaghan equation of state for solids and the dependence E _tot (V). This value of the bulk modulus is used to estimate the activation energy for interstitial diffusion of silicon atoms Q _i(Si) ≈ 0.8 eV.     

Optical properties and mechanisms of current flow in Cu<Subscript>2</Subscript>ZnSnS<Subscript>4</Subscript> films prepared by spray pyrolysis

Thin films Cu₂ZnSnS₄ (up to 0.9 μm thick) with p-type conductivity and band gap E_g = 1.54 eV have been prepared by the spray pyrolysis of 0.1 M aqueous solutions of the salts CuCl₂ · 2H₂O, ZnCl₂ · 2H₂O, SnCl₄ · 5H₂O, and (NH₂)₂CS at a temperature T_S = 290°C. The electrophysical properties of the films have been analyzed using the model for polycrystalline materials with electrically active grain boundaries. The energy and geometric parameters of the grain boundaries have been determined as follows: the height of the barriers is E_b ≈ 0.045–0.048 eV, and the thickness of the depletion region is δ ≈ 3.25 nm. The effective concentrations of charge carriers p₀ = 3.16 × 10¹⁸ cm^–3 and their mobilities in crystallites μ_p = 85 cm²/(V s) have been found using the technique for determining the kinetic parameters from the absorption spectra of thin films at a photon energy hν ≈ E_g. The density of states at grain boundaries N_t = 9.57 × 10¹¹ cm^–2 has been estimated.     

Stabilization of Ferromagnetism in BiFeO<Subscript>3</Subscript>:Ho at Hydrostatic Pressure

The isothermal magnetization of the Bi_{1 – x}Ho _x FeO₃ (x = 0?0.2) multiferroic has been studied at a hydrostatic pressure up to 9 GPa in the range of room temperatures. A new anomaly at P_C ≈ 3.81 GPa related to intermediate phases between the structural transition R3c → Pnma has been found against the background of the pressure-induced antiferromagnetic ordering in BiFeO₃ (BFO) at P ≈ 2.59 GPa. It is established that the ferromagnetic behavior under pressure depends on the Ho impurity concentration: P_C decreases at 0.05 ≤ x ≤ 0.1 because of the decrease in R3c bond lengths in the structure, and the stabilization of ferromagnetism is implemented at 0.1 ≤ x ≤ 0.2 probably because of the coexistence of the R3c and Pnma phases. The results of studies indicate that, in Bi_{1 – x}Ho _x FeO₃ with x = 0.2, the transition pressure P_C = 3.7 GPa exceeds the values for BFO doped with other 4f elements (Eu, Y, Sm) in the region R3c → Pnma of the transition.     

Low-temperature thermal-expansion anomaly in Bi<Subscript>2</Subscript>Sr<Subscript>2</Subscript>CuO<Subscript>6</Subscript>

Single-crystal samples of the Bi_{2 + x}Sr_{2 ? x ? y}Cu_{1 + y}O_{6 + δ} system revealed anomalous (negative) thermal expansion in the temperature range 10–20 K. Magnetic fields of 1–3 T were found to strongly affect the position and width of the anomaly region. A thermal-expansion singularity was detected at temperatures T≈30–50 K, which may be related to the formation of a pseudogap.     

Luminescence of Tl<Superscript>+</Superscript> ions in a KZnF<Subscript>3</Subscript> crystal

The luminescence spectra of a KZnF₃: Tl⁺ crystal are investigated in the energy range from 4.75 to 5.9 eV at temperatures of 10–300 K upon excitation into the A absorption band (5.7–6.3 eV). At T=300 K, the luminescence spectra exhibit an intense band with a maximum at 5.45 eV, which is attributed to single Tl⁺ ions substituted for K⁺ ions. The 5.723-eV intense narrow band observed at T<20 K is assigned to the ³Γ_1u-¹Γ_1g zero-phonon transition, which is weakly allowed by the hyperfine interaction. The luminescence decay is studied as a function of temperature. The main characteristics of the luminescence spectra are adequately described in terms of the semiclassical theory based on the Franck-Condon principle and the Jahn-Teller effect for an excited sp configuration of the Tl⁺ ion with the use of the parameters obtained earlier from analyzing the absorption spectra of the system under investigation.     

Simulation of the magnetic properties of manganese oxide Pb<Subscript>3</Subscript>Mn<Subscript>7</Subscript>O<Subscript>15</Subscript>

The magnetic susceptibility, heat capacity, and spin-spin correlation functions of manganese oxide Pb₃Mn₇O₁₅ are calculated by the Monte Carlo method. Two critical temperatures are determined: T ₁ ≈ 20 K, above which a modulated structure along the hexagonal axis is formed, and T ₂ ≈ 70 K, at which the long-range magnetic order disappears. The antiferromagnetic exchange interaction constant in a hexagonal plane is estimated to be J ₁ ～ 7 K, and the antiferromagnetic and ferromagnetic exchange interaction constants between hexagonal planes are calculated to be J ₂ ～ 3 K and K ～ 50 K, respectively.     

Magnetic and transport properties of colossal magnetoresistance compound EuB<Subscript>6</Subscript>

The galvanomagnetic and magnetic properties of EuB₆ single crystal have been measured over wide temperature (1.8–300 K) and magnetic-field (up to 70 kOe) ranges, and the parameters of charge carriers and the characteristics of the magnetic subsystem are estimated in the paramagnetic and ferromagnetic (T < T _C ≈ 13.9 K) phases of this compound with strong electron correlations. In the temperature range T < T* ≈ 80 K, a magnetoresistance hysteresis Δρ(H)/ρ(0) is detected; it reaches a maximum amplitude of about 5% at T ≈ 12 K. The anomalies of charge transport observed in the temperature range T _C < T < T* are shown to be related to the magnetic scattering of charge carriers (m _eff = (15–30)m ₀, where m ₀ is the free-electron mass) that results from a short-range magnetic order appearing upon the formation of ferromagnetic nanoregions (ferrons).     

Crystal-structure and magnetic phase transformations in solid solutions of BiFeO<Subscript>3</Subscript>-AFe<Subscript>0.5</Subscript>Nb<Subscript>0.5</Subscript>O<Subscript>3</Subscript> (A = Ca,Sr, Ba,Pb)

Solid solutions of Bi_{1 ? x} A _x (Fe_{1 ? x/2}Nb _x/2)O₃, where A = Ca, Ba, and Pb, are obtained and their crystal structure and magnetic properties are investigated. It is shown that for A = Ca and x ≈ 0.15, the symmetry of the unit cell changes from rhombohedral (space group R3c) to orthorhombic (Pbnm). The transformation leads to the emergence of spontaneous magnetization due to the Dzyaloshinskii-Moriya interaction. Solid solutions with A = Pb remain rhombohedral up to a concentration of x = 0.3. Spontaneous magnetization sharply increases in the compound with x ≈ 1 at low temperatures and is due to the formation of the spin-glass component.     

Specific heat of La(Fe<Subscript>0.873</Subscript>Co<Subscript>0.007</Subscript>Al<Subscript>0.12</Subscript>)<Subscript>13</Subscript> compound in antiferromagnetic and ferromagnetic states

The low-temperature specific heat C _p of La(Fe_0.873Co_0.007Al_0.12)₁₃ compound has been measured in two states: (i) antiferromagnetic (AFM) with a Néel temperature of T _N = 192 K and (ii) ferromagnetic (FM). The FM order appears at T = 4.2 K in a sample exposed to an external magnetic field with induction B _C ≥ 2.5 T and is retained for a long time in a zero field at temperatures up to T*_C = 23 K. The coefficient γ_FM in the low-temperature specific heat C = γT + βT ³ in the FM state differs quite insignificantly from that (γ_AFM) in the AFM state. Contributions to the low-temperature specific heat, which are related to a change in the elastic and magnetoelastic energy caused by magnetostrictive deformations, are considered.     

Withdrawal of Electrodynamical Forbiddance and Peculiarities of the SERS Spectra in Fullerene C<Subscript>70</Subscript>

It is demonstrated that in fullerene C₇₀, which can be considered as a deformed fullerene C₆₀ in some mean sense there is a withdrawal of an Electrodynamical forbiddance of a strong quadrupole light-molecule interaction, which is realized in the fullerene C₆₀. This situation occurs because of the reduction of symmetry of C₆₀ from the icosahedral symmetry group Y_h to the group D_5h. The withdrawal results in appearance of the lines in the SERS spectra of C₆₀, which are forbidden in usual Raman scattering and are active in the infrared absorption spectra. The experimentally measured SERS spectra of C₇₀ demonstrates existence of such lines that strongly confirms our ideas about the dipole-quadrupole SERS mechanism.     

Dependence of the magnetic and superconducting characteristics of fine-grained HTSCs YBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript><Emphasis Type="Italic">y</Emphasis></Subscript> on the degree of structural disorder and type of oxygen vacancy ordering in chain planes

The characteristics determining different contributions to the magnetic susceptibility at T > T _C (Pauli susceptibility, coherence length at T = 0, and Curie constant) as functions of the degree of structural disorder have been analyzed for high-temperature superconducting YBa₂Cu₃O _y samples ( y ≈ 6.92, T _C ≈ 92 K) with micrometer and submicron average grain sizes D _av. It is shown that the decrease in these characteristics, which is observed in fine-grained samples with a decrease in D _av, occurs in various ways, depending on the number and type of oxygen vacancy ordering in chain planes.     

Electronic transitions in the VBO<Subscript>3</Subscript> single crystal at high pressures

Optical absorption spectra of single crystals of the ferromagnetic semiconductor VBO₃ are studied at high pressures up to 70 GPa achieved in a diamond-anvil cell. An electronic transition accompanied by sharp changes in the optical parameters and a decrease in the optical gap from E ₀ = 3.02 eV to 2.25 eV is found at the pressure P _C ～ 30 GPa. The gap does not disappear in the high-pressure phase and its value becomes typical of semiconductors. This is indicative of a semiconductor-semiconductor transition. The transition to the metallic state may occur at the critical pressure P _met ≈ 290 GPa.     

Relaxation phenomena in TlGa<Subscript>0.99</Subscript>Fe<Subscript>0.01</Subscript>Se<Subscript>2</Subscript> single crystals

The relaxation electronic phenomena occurring in TlGa_0.99Fe_0.01Se₂ single crystals in an external dc electric field are investigated. It is established that these phenomena are caused by electric charges accumulated in the single crystals. The charge relaxation at different electric field strengths and temperatures, the hysteresis of the current-voltage characteristic, and the electric charge accumulated in the TlGa_0.99Fe_0.01Se₂ single crystals are consistent with the relay-race mechanism of transfer of a charge generated at deep-lying energy levels in the band gap due to the injection of charge carriers from the electric contact into the crystal. The parameters characterizing the electronic phenomena observed in the TlGa_0.99Fe_0.01Se₂ single crystals are determined to be as follows: the effective mobility of charge carriers transferred by deep-lying centers μ_f=5.6×10^?2 cm²/(V s) at 300 K and the activation energy of charge transfer ΔE=0.54 eV, the contact capacitance of the sample C _c =5×10^?8 F, the localization length of charge carriers in the crystal d _c =1.17×10^?6 cm, the electric charge time constant of the contact τ=15 s, the time a charge carrier takes to travel through the sample t _t =1.8×10^?3 s, and the activation energy of traps responsible for charge relaxation ΔE _σ = ΔE _Q = 0.58 eV.