Electronic and optical properties of single-layer MoS<Subscript>2</Subscript>

The electronic structures of a MoS₂ monolayer are investigated with the all-electron first principle calculations based on the density functional theory (DFT) and the spin-orbital couplings (SOCs). Our results show that the monolayer MoS₂ is a direct band gap semiconductor with a band gap of 1.8 eV. The SOCs and d-electrons in Mo play a very significant role in deciding its electronic and optical properties. Moreover, electronic elementary excitations are studied theoretically within the diagrammatic self-consistent field theory. Under random phase approximation, it shows that two branches of plasmon modes can be achieved via the conduction-band transitions due to the SOCs, which are different from the plasmons in a two-dimensional electron gas and graphene owing to the quasi-linear energy dispersion in single-layer MoS₂. Moreover, the strong optical absorption up to 10⁵ cm^-1 and two optical absorption edges I and II can be observed. This study is relevant to the applications of monolayer MoS₂ as an advanced photoelectronic device.     

Alkali-metal-embedded in monolayer MoS<Subscript>2</Subscript>: optical properties and work functions

Embedding alkali-metal in monolayer MoS₂ has been investigated by using first principles with density functional theory. The calculation of the electronic and optical properties indicates that alkali-metal was embedded in monolayer MoS₂ appearing almost metallic behavior, and the MoS₂ layer shows clear p-type doping behavior. The covalent bonding appears between the alkali-metal atoms and defective MoS₂. More importantly, embedding alkali-metal can increase the work function for monolayer MoS₂. Furthermore, the absorption spectrum of monolayer MoS₂ is red shifted because of alkali metal embedding. Accordingly, this study will provide the theoretical basis for producing the alkali-metal-doped monolayer MoS₂ radiation shielding and photoelectric devices.     

Optically probing the interaction between monolayer MoS<Subscript>2</Subscript> and single-wall carbon nanotube

Owing to outstandingly tunable optoelectronic properties, hybrid materials consisting of atomic scale thickness of two dimensional (2D) transition metal dichalcogenides (TMDs) and one dimensional (1D) nanowires have been attracting steady interests over the last several years. In this research for the first time we report optically probing the interaction between monolayer MoS₂ and single-wall carbon nanotube (SWCNT). By using Raman and photoluminescence measurements, we found the charge transfer between MoS₂ and SWCNT is sensitive to the intensity of light field. We also demonstrate that SWCNT acts as p-type dopants at physical contact with monolayer MoS₂. Our study gives new insight into the interaction between monolayer MoS₂ and SWCNT, which may allow new phenomena and ideas for novel low dimensional hybrid materials.     

The interfacial properties of SrRuO<Subscript>3</Subscript>/MoS<Subscript>2</Subscript> heterojunction: a first-principles study

First-principles calculation was used to study the interfacial properties of theSrRuO₃ (1 1 1)/MoS₂(√3 × √3) heterojunction. It is found that the huge magneticmoments in of monolayer MoS₂ largely originate from the Ru-S hybridization for theRu-terminated interface. Moreover, for the SrO-terminated interface, we studied mainly themetal and semiconductor contact characteristic. The calculated results show that theSchottky barrier height can be significantly reduced to zero for the SrO-terminatedinterface. Schottky barrier heights dominate the transport behavior of theSrRuO₃/MoS₂ interface. Our results not only have potentialapplications in spintronics devices, but also are in favour of the scaling of field effecttransistors.     

Band renormalization and spin polarization of MoS2 in graphene/MoS2 heterostructures

Transition metal dichalcogenides exhibit spin–orbit split bands at the K‐point that become spin polarized for broken crystal inversion symmetry. This enables simultaneous manipulation of valley and spin degrees of freedom. While the inversion symmetry is broken for monolayers, we show here that spin polarization of the MoS₂ surface may also be obtained by interfacing it with graphene, which induces a space charge region in the surface of MoS₂. Polarization induced symmetry breaking in the potential gradient of the space charge is considered to be responsible for the observed spin polarization. In addition to spin polarization we also observe a renormalization of the valence band maximum (VBM) upon interfacing of MoS₂ with graphene. The energy difference between the VBM at the Γ‐point and K‐point shifts by ～150 meV between the clean and graphene covered surface. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Surface Plasmon Polaritons in MoS<Subscript>2</Subscript> Nanostructures

The surface plasmon polaritons (SPPs) in monolayer MoS₂ nanostructures are theoretically investigated in detail. Our study shows that the strong SPPs are induced in gigahertz (GHz) frequency range. The frequencies of SPPs are very sensitive on the substrates in the nanostructures. Moreover, the frequency of such SPPs can be controlled by varying the electron densities. Our study can be applied to understand the recent experimental results and is relevant to the applications of plasmonic nano-devices based on MoS₂.     

Magnetic ground state and multiferroicity in BiMnO<Subscript>3</Subscript>

We argue that the centrosymmetric C2/c symmetry in BiMnO₃ is spontaneously broken by antiferromagnetic (AFM) interactions existing in the system. The true symmetry is expected to be Cc, which is compatible with the noncollinear magnetic ground state, where the ferromagnetic order along one crystallographic axis coexists with the hidden AFM order and related to it ferroelectric polarization along two other axes. The C2/c symmetry can be restored by the magnetic field B ∼ 35 T, which switches off the ferroelectric polarization. Our analysis is based on the solution of the low-energy model constructed for the 3d-bands of BiMnO₃, where all the parameters have been derived from the first-principles calculations. Test calculations for isostructural BiCrO₃ reveal an excellent agreement with experimental data. The article is published in the original.     

Magnetoelectric effect in ytterbium aluminum borate YbAl<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript>

The anisotropic magnetoelectric properties of an ytterbium aluminum borate YbAl (BO single crystal having noncentrosymmetric crystal structure (space group R32) are studied, including the orientational, field, and temperature dependences of the polarization in magnetic fields up to 5 T in the temperature range of 2–300 K. It has been shown experimentally for the first time that the symmetry of the observed magnetoelectric effects exactly corresponds to the trigonal structure of the crystal and is characterized by two quadratic magnetoelectric constants. The polarization in the basal plane P _{a, b} is a quadratic function of the field at low fields and reaches 250–300 μC/m² in a field of 5 T at a temperature of 2 K, almost an order of magnitude exceeding the previously reported values. A theoretical model based on the spin Hamiltonian of the ground Kramers doublet of Yb³⁺ ions in the crystal field is proposed including magnetoelectric interactions allowed by the symmetry. This model makes it possible to quantitatively describe all observed magnetic and magnetoelectric properties of YbAl₃(BO₃)₄.     

Interrelation between the soliton lattice and electric polarization in RMn<Subscript>2</Subscript>O<Subscript>5</Subscript> oxides

Magnetic transitions from the paramagnetic state to an incommensurate magnetic structure and then to an ordered phase with long-range antiferromagnetic order in RMn₂O₅ (R is a rare-earth ion) oxides are analyzed. It is shown that a transition from the paramagnetic to the incommensurate phase is associated with exchange as well as relativistic interactions and can be described, apart from the basic magnetic order parameter, by an associated order parameter (viz., electric polarization along the y axis of the crystal). As a result of such a transition, the emergence of electric polarization in the crystal is not accompanied by a change in crystal symmetry.     

Manipulating edge current spin polarization in zigzag MoS2 nanoribbons

The electronic structure and quantum transport of a zigzag monolayer molybdenum disulfide (MoS₂) nanoribbon are investigated using a six-band tight-binding model. For metallic edge modes, considering both an intrinsic spin–orbit coupling and local exchange field effects, spin degeneracy and spin inversion symmetry are broken and spin selective transport is possible. Our model is a three-terminal field effect transistor with a circular-shaped gate voltage in the middle of scattering region. One terminal measures the top edge current and the other measures the bottom edge current separately. By controlling the circular gate voltage, each terminal can detect a totally spin-polarized edge current. The radius of the circular gate and the strength of the exchange field are important, because the former determines the size of the channel in both S-terminated (top) and Mo-terminated (bottom) edges and the latter is strongly related to unbalancing of the density of spin states. The results presented here suggest that it should be possible to construct spin filters using implanted MoS₂ nanoribbons.     

Specific features of the magnetic field-induced orientational transition in EuMnO<Subscript>3</Subscript>

It is found that the spin-flop transition in EuMnO₃ manganite induced by a magnetic field H parallel to the b axis is accompanied not only by a magnetization jump and magnetostriction anomalies but also by the appearance of electric polarization in the vicinity of the transition field H_cr ～ 200 kOe. This phenomenon can be associated with the occurrence of magnetically inhomogeneous (modulated) states in the vicinity of H_cr. In these states, the system loses the center of symmetry, which allows for the appearance of the polarization. The formation of such states in a magnetic field is caused by the general tendency of the occurrence of magnetically inhomogeneous (incommensurate) structures in the RMnO₃ series due to the frustration of exchange interactions with decreasing ionic radius of the rare-earth ion R starting with R = Eu.     

The effect of carrier gas flow rate on the growth of MoS<Subscript>2</Subscript> nanoflakes prepared by thermal chemical vapor deposition

Molybdenum disulfide nanoflakes (MoS₂) are superior material for their semiconducting properties. For bulk and monolayer MoS₂ the band gap changes from indirect-to-direct, respectively. So, it exhibits promising prospects in the applications of optoelectronics and valleytronics, such as solar cells, transistors, photodetectors, etc. In this research, the influence of different Ar flow rates as the carrier gas, is investigated for growing MoS₂ nanoflakes on silicon substrates using one-step thermal chemical vapor deposition by simultaneously evaporating of solid sources like sulfur and molybdenum trioxide powders. The structural and optical properties of the obtained nanoflakes are assessed by using X-ray diffraction pattern, scanning electron microscopy, UV–visible absorption, photoluminescence and Raman spectroscopy. It is shown that, Ar gas flow rate is strongly affects on the final products as few-layer MoS₂ structures. Moreover, the abundance of MoS₂ in comparison to MoO₂ and MoO₃ structures, in the obtained nanoflakes, is influenced by the Ar flow rate.     

Magnetic and EPR studies of the EuFe<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript> single crystal

Magnetic and electron paramagnetic resonance (EPR) properties of EuFe₃(BO₃)₄ single crystals have been studied over the temperature range of 300–4.2 K and in a magnetic field up to 5 T. The temperature, field and orientation dependences of susceptibility, magnetization and EPR spectra are presented. An antiferromagnetic ordering of the Fe subsystem occurs at about 37 K. The easy direction of magnetization perpendicular to the c axis is determined by magnetic measurements. Below 10 K, we observe an increase of susceptibility connected with the polarization of the Eu sublattice by an effective exchange field of the ordered Fe magnetic subsystem. In a magnetic field perpendicular to the c axis, we have observed an increase of magnetization at T < 10 K in the applied magnetic field, which can be attributed to the appearance of the magnetic moment induced by the magnetic field applied in the basal plane. According to EPR measurements, the distance between the maximum and minimum of derivative of absorption line of the Lorentz type is equal to 319 Gs. The anisotropy of g-factor and linewidth is due to the influence of crystalline field of trigonal symmetry. The peculiarities of temperature dependence of both intensity and linewidth are caused by the influence of excited states of europium ion (Eu³⁺). It is supposed that the difference between the g-factors from EPR and the magnetic measurements is caused by exchange interaction between rare earth and Fe subsystems via anomalous Zeeman effect.     

Generation of MoS<Subscript>2</Subscript> quantum dots by laser ablation of MoS<Subscript>2</Subscript> particles in suspension and their photocatalytic activity for H<Subscript>2</Subscript> generation

MoS₂ quantum dots (QDs) have been obtained in colloidal suspensions by 532 nm laser ablation (7 ns fwhp/pulse, 50 mJ/pulse) of commercial MoS₂ particles in acetonitrile. High-resolution transmission electron microscopy images show a lateral size distribution from 5 to 20 nm, but a more homogeneous particle size of 20 nm can be obtained by silica gel chromatography purification in acetonitrile. MoS₂ QDs obtained by laser ablation are constituted by 3–6 MoS₂ layers (1.8–4 nm thickness) and exhibit photoluminescence whose λ_PL varies from 430 to 530 nm depending on the excitation wavelength. As predicted by theory, the confinement effect and the larger periphery in MoS₂ QDs increasing the bandgap and having catalytically active edges are reflected in an enhancement of the photocatalytic activity for H₂ generation upon UV–Vis irradiation using CH₃OH as sacrificial electron donor due to the increase in the reduction potential of conduction band electrons and the electron transfer kinetics.     

From layers to nanotubes: Transition metal disulfides TMS<Subscript>2</Subscript>

MoS₂ and WS₂ layered transition-metal dichalcogenides are indirect band gap semiconductors in their bulk forms. Thinned to a monolayer, they undergo a transition and become direct band gap materials. Layered structures of that kind can be folded to form nanotubes. We present here the electronic structure comparison between bulk, monolayered and tubular forms of transition metal disulfides using first-principle calculations. Our results show that armchair nanotubes remain indirect gap semiconductors, similar to the bulk system, while the zigzag nanotubes, like monolayers, are direct gap materials, what suggests interesting potential applications in optoelectronics.     

Magnetic and ferroelectric ordering in BiMn<Subscript>2</Subscript>O<Subscript>5</Subscript> oxide

A group-theoretical analysis of the magnetic phase of BiMn₂O₅ oxide is performed using the space symmetry group of the compound. Using the projection operator method, we determine the basis functions of the irreducible representation of the space group, which are expressed in terms of the magnetic vector components. This representation can govern two phase transitions from the paramagnetic state to the antiferromagnetic phase with close temperatures and ordering of the spins of manganese ions in two crystallographic positions. It is found from renorm group analysis of these transitions that when these transitions occur as second- order transitions, the electric polarization does not appear in the system because spin fluctuations in this case elevate the symmetry of the system. Polarization appears when at least one of these transitions becomes a first-order transition as a result of spin fluctuations.     

Magnetic state of the structural separated anion-deficient La<Subscript>0.70</Subscript>Sr<Subscript>0.30</Subscript>MnO<Subscript>2.85</Subscript> manganite

The results of neutron diffraction studies of the La_0.70Sr_0.30MnO_2.85 compound and its behavior in an external magnetic field are stated. It is established that in the 4–300 K temperature range, two structural perovskite phases coexist in the sample, which differ in symmetry (groups R[`3]cR\bar 3c and I4/mcm). The reason for the phase separation is the clustering of oxygen vacancies. The temperature (4–300 K) and field (0–140 kOe) dependences of the specific magnetic moment are measured. It is found that in zero external field, the magnetic state of La_0.70Sr_0.30MnO_2.85 is a cluster spin glass, which is the result of frustration of Mn³⁺-O-Mn³⁺ exchange interactions. An increase in external magnetic field up to 10 kOe leads to fragmentation of ferromagnetic clusters and then to an increase in the degree of polarization of local spins of manganese and the emergence of long-range ferromagnetic order. With increasing magnetic field up to 140 kOe, the magnetic ordering temperature reaches 160 K. The causes of the structural and magnetic phase separation of this composition and formation mechanism of its spin-glass magnetic state are analyzed.     

Antisymmetric exchange in the CuB<Subscript>2</Subscript>O<Subscript>4</Subscript> A subsystem

The space distribution of the components of the microscopic Hamiltonian of the antisymmetric Dzyaloshinskii-Moriya exchange with respect to the exchange bond pairs of the A subsystem of Cu²⁺ ions in the crystallographic 4b positions of CuB₂O₄ has been obtained using symmetry analysis. The possibility of the coexistence of two different types of the exchange spatial distribution is demonstrated. The component of the antisymmetric exchange vector D parallel to the tetragonal axis has a weakly ferromagnetic distribution for all of the directions of the bonds between the nearest magnetic neighbors. Each exchange bond has an additional component of the antisymmetric exchange parallel to the bond projection on the tetragonal plane. The spatial distribution of these components is helicoidal with the modulation vector in the tetragonal crystal plane.     

Geometric symmetry modulated spin polarization of electron transport in graphene-like zigzag FeB<Subscript>2</Subscript> nanoribbons

Due to electron deficiency, the graphene-like honeycomb structure of boron is unstable. By introducing Fe atoms, it is reported that FeB₂ monolayer has excellent dynamic and thermal stabilities at room temperature. Based on first-principles calculations, the spin-dependent transport of zigzag FeB₂ nanoribbons (ZFeB₂NRs) under ferromagnetic state (FM) is investigated. It is found that, around the Fermi level, FeB-terminated (or FeFe-terminated) ZFeB₂NRs exhibit completely spin-polarized (or spin-unpolarized) transmission, and BB-terminated configurations exhibit completely unpolarized or partially polarized transmission. Further analysis shows that, the hinge dihedral angle has a switching effect on the transport channels, and the spin polarization of the transmission is determined by the symmetry of the distribution of hinge dihedral angles along the transverse direction of the ribbon, where symmetric/asymmetric distribution induces spin-unpolarized/polarized transmission. Moreover, such a symmetry effect is found to be robust to the width of the ribbon, showing great application potential. Our findings may throw light on the development of B-based spintronic devices.     

Electronic and transport properties of heterophase compounds based on MoS<Subscript>2</Subscript>

New heterophase superlattices based on MoS₂ are studied in detail by the electron density functional theory. It is shown that the incorporation of the 1Т phase in the 2H-MoS₂ monolayer is responsible for the formation of electronic levels near the Fermi level and quantum wells in the transverse direction of superlattices. The proposed lateral heterophase structures of transition metal dichalcogenides are promising for the construction of new elements of nanoelectronics.