Electronic structure of collapsed C,BN, and BC3 nanotubes

The electrical properties of single-wall C, BN, and BC₃ nanotubes in ideally rolled-up forms show a wide spectrum from truly metals to large band gap semiconductors. In the presence of radial deformations that collapse tubes, the electrical properties are severely modified such that metals turn into semiconductors and vice versa. Based on first-principles pseudopotential calculations, we find that metallic C nanotubes have a finite band gap if radial deformations break all mirror symmetries of the tubes, and that original finite gaps (∼0.5 eV) of semiconducting C and BC₃ tubes are closed by collapsing deformations. In BN tubes, band gaps can be tuned in the range 2–5 eV. On the other hand, the band gaps of armchair BN and zigzag BC₃ nanotubes are found to be insensitive to radial deformations. These new findings can be applied to design new types of nanotube-based functional devices using radial deformations.     

Effect of Band Nonparabolicity on the Inter Band Tunneling in Semiconductors

A simple yet generalized theory is developed to study inter band tunneling property of narrow band gap III–V compound semiconductors. The band structures of these low band gap semiconductors with sufficiently separated split-off valance band are usually described by the three energy band model of Kane, so this has been adopted here for the analysis of interband tunneling property in the case of InAs, InSb, and In_1-xGa_xAs_yP_1-y lattice matched to InP as representative direct band gap semiconductors having varied split-off valence band compared to their bulk state band gap energy. It has been found that the magnitude of tunneling rate from heavy hole decreases with increasing band nonparabolicity and the impact is more significant at high electric field in the three-band model of Kane than those with simple parabolic energy band approximations reflecting the direct influence of energy band parameters on inter band tunneling transitions. With proper consideration of band nonparabolicity, the results of the analysis of tunneling rate of these narrow gap materials show significant deviations from the results when simple parabolic band approximation is considered. The exact physical basis of the sources of deviation in the nonparabolic case from the corresponding parabolic band approximations is discussed in association to band coupling effect, transverse energy dependence, and the interplay between them. Moreover, under certain limiting conditions, our results reduce to the well-known results of parabolic band approximation and thus providing an indirect test to the accuracy of our generalized formulations.     

Fundamental band edge optical absorption in Bi<Subscript>0.5</Subscript>Sb<Subscript>1.5</Subscript>Te<Subscript>3</Subscript>

Spectra of optical absorption in Bi_0.5Sb_1.5Te₃ films grown on mica and KBr substrates have been investigated for T = 145 and 300 K. The data obtained have been analyzed together with the data of investigations on the fundamental absorption edge for Bi₂Te₃ available in the scientific literature. It has been revealed that the interband absorption spectra for both Bi_0.5Sb_1.5Te₃ and Bi₂Te₃ represent a superposition of two components corresponding to direct and indirect allowed optical transitions. In this case, the least energy gap separating the valence band and the conduction band is direct for Bi_2−xSb_xTe₃ (x ≤ 1.5, T = 300 K). For Bi_0.5Sb_1.5Te₃ the temperature variation rates have been estimated for the thresholds of direct and indirect interband transitions. It has been shown that this solid solution is direct gap solution at T ≥ 145 K. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 50–52, July, 2008.     

First-principles study of narrow single-walled GaN nanotubes

Structural and electronic properties of narrow single-walled GaN nanotubes with diameter from 0.30 to 0.55 nm are investigated using the density functional method with generalized-gradient approximation. The calculations of total energies predict that the most likely GaN nanotubes in our calculation are (2,2), (3,2) and (3,3) nanotubes. From a detailed analysis we find that these narrow single-walled GaN nanotubes are all semiconductors, of which the armchair and chiral tubes are indirect-band-gap semiconductors whereas the zigzag ones have a direct gap except for (4,0) tube. The indirect band gap of (4,0) tube can stem from band sequence change induced by curvature effect. Our results show that the π-π hybridization effect and the formation of benign buckling separations play a key role in the band sequence changes of (4,0) tube.     

Effect of deformation on the electronic structure and topological properties of the A<Superscript>II</Superscript>Mg<Subscript>2</Subscript>Bi<Subscript>2</Subscript> (A<Superscript>II</Superscript> = Mg,Ca,Sr,Ba) compounds

The electronic structure and topological properties of the A^IIMg₂Bi₂ (A^II = Mg,Ca,Sr,Ba) compounds are theoretically studied with the use of exact exchange. It is found that the Mg₃Bi₂ compound in the equilibrium state is a semimetal, whereas three other compounds are semiconductors with a direct fundamental band gap. It is predicted that the uniaxial deformation of three-component compounds results in transitions to topologically nontrivial phases: topological insulator and topological and Dirac semimetals. Owing to such a rich variety of topologically nontrivial phases, these compounds may be of interest for further theoretical and experimental studies.     

Mechanical stability and optoelectronic behavior of BeXP2 (X=Si and Ge) chalcopyrite

We have conducted a first-principles study on the structural, electronic, optical and elastic properties of BeSiP₂ and BeGeP₂ chalcopyrite compounds. Using the density functional theory (DFT), implemented in both full potential linear muffin-tin orbital (FP-LMTO) and Vienna Ab initio simulation (VASP) packages. The FP-LMTO is used for the determination of the structural, electronic and optical properties, while the VASP is used to determine the elastic constants that give indications about the material stability. The obtained equilibrium structural parameters are in good agreement with available results. An investigation of the band gap indicates that our compounds possess a semiconductor behavior with direct band gap for BeSiP₂ and with an indirect band gap for BeGeP₂. The energy band gaps decreased by changing Be atoms from Si to Ge. We have calculated the dielectric function ε(ω). The obtained results show that these materials are promising semiconductors for photovoltaic applications. For the elastic properties, the single-crystal elastic constants C_ij, shear anisotropic factors A, as well as polycrystalline bulk, shear and Young's modulus (B, G and E) and Poisson's ratio v have been predicted. The generalized elastic stability criteria for a tetragonal crystal are well satisfied, indicating that BeSiP₂ and BeGeP₂ are mechanically stable in the chalcopyrite structure.     

单层金属卤化物CoX_2(X=Cl、Br、I)可调能隙和磁性研究

本文采用密度泛函理论系统的研究了二维单层金属卤化物CoX_2(X=Cl,Br,I)的结构稳定性、电子性质和磁性质.三种卤化物的束缚能分别是9.01、8.04和6.95 eV,表明Co原子和卤素原子间存在强相互作用.三种材料的能带结构都显示了间接带隙半导体特性.三种材料的总磁矩都是3 μ_B,主要来源于Co原子的磁矩.为了实现对材料物性的调控,我们考虑了双轴应变.发现压缩应变不仅可以显著增强铁磁态的稳定性,还可以实现体系从间接带隙半导体向直接带隙半导体的转变.     

Stability and electronic structure of InN nanotubes from first-principles study

The stability and electronic structure of hypothetical InN nanotubes were studied by first-principles density functional theory. It was found that the strain energies of InN nanotubes are smaller than those of carbon nanotubes of the same radius. Single-wall zigzag InN nanotubes were found to be semiconductors with a direct band gap while the armchair counterparts have an indirect band gap. The band gaps of nanotubes decrease with increasing diameter, similar to the case of carbon nanotubes.     

Features of the electron density distribution in antimony telluride Sb<Subscript>2</Subscript>Te<Subscript>3</Subscript>

Based on the results of electron density functional calculations of the electronic band structure of semiconductors Sb₂Te₃, Ge, Te, and semimetal Sb, the parameters of critical points in the electron density distribution (maxima, minima, and saddle points) in the lattices of the above materials are found. The data obtained are used to analyze the chemical bond nature in Sb₂Te₃.     

Effect of lattice deformation and phase transitions on the electronic spectra of TlGaS<Subscript>2</Subscript>, TlGaSe<Subscript>2</Subscript>, and TlInS<Subscript>2</Subscript> layered semiconductors

The effect of the lattice deformation on the electronic spectra of TlGaS₂, TlGaSe₂, and TlInS₂ layered semiconductor crystals is analyzed. It is shown that changes in the band gap of these semiconductors due to thermal expansion and a change in the composition under hydrostatic or uniaxial pressure can be described within a unified model of the deformation potential. The main feature of this model is the inclusion of deformation potentials with different signs, which is characteristic of other semiconductors with a layered structure. An analysis of the lattice deformation of the studied semiconductors in terms of the proposed model of the deformation potential has revealed that, in the immediate vicinity of the phase transitions, the crystal lattice under pressure undergo an unusual deformation.     

High-pressure phases of MgSiN<Subscript>2</Subscript> from first-principles calculations

The relationship between structure and pressure for MgSiN₂ has been simulated using a density functional approximation within the local density approximation. The low-pressure (LP-) phase of MgSiN₂ with an orthorhombic structure transforms to a high-pressure (HP-) modification with a CsICl₂-type structure at a pressure of about 16.5 GPa. HP-MgSiN₂ , in which both Mg and Si are octahedrally coordinated by N, has a bulk modulus of about 238 GPa, much higher than that of the LP-modification (about 182 GPa) with tetrahedrally coordinated metal atoms. HP-MgSiN₂ is a wide-gap semiconductor with an indirect energy gap of about 4.3 eV, similar to that of LP-MgSiN₂. The direct gap at is about 5.8 eV. PACS 71.15.Mb; 61.50.Ks; 61.50.Ah     

Electronic structure of half-metallic ferromagnet Co<Subscript>2</Subscript>MnSi at high-pressure

In this study, first principles calculation results of the half-metallic ferromagnetic Heusler compound Co₂MnSi are presented. All calculations are based on the spin-polarized generalized gradient approximation (σ-GGA) of the density functional theory and ultrasoft pseudopotentials with plane wave basis. Electronic structure of related compound in cubic L2₁ structure is investigated up to 95 GPa uniform hydrostatic pressure. The half-metal to metal transition was observed around ~70 GPa together with downward shift of the conduction band minimum (CBM) and a linear increase of direct band gap of minority spins at Γ-point with increasing pressure. The electronic density of states of minority spins at Fermi level, which are mainly due to the cobalt atoms, become remarkable with increasing pressure resulting a sharp decrease in spin polarization ratio. It can be stated that the pressure affects minority spin states rather than that of majority spins and lead to a slight reconstruction of minority spin states which lie below the Fermi level. In particular, energy band gap of minority spin states in equilibrium structure is obviously not destroyed, but the Fermi level is shifted outside the gap.     

Mott Transition in GdMnO<Subscript>3</Subscript>: an Ab Initio Study

Orthorhombic GdMnO₃ is studied using density functional theory considering the pseudo-potential plane-wave method within local-spin-density approximation, LSDA. The electronic band structure and density of states, for several hydrostatic pressures, are studied. The Mott transition was observed at 60 GPa. Calculated lattice parameters are close to the experimental measurements, and some indirect band gaps (S→Γ) were obtained within the LSDA level of calculation, between the occupied O-2p and unoccupied Gd-4f states. The variation of the gap reduces with increasing pressure, being well fitted to a quadratic function.     

First-principles studies of structural,mechanical, electronic,optical properties and pressure-induced phase transition of CuInO2 polymorph

Using the first-principles density-functional theory within the generalized gradient approximation (GGA), we have investigated the structural, elastic, mechanical, electronic, and optical properties and phase transition of CuInO₂. Structural parameters including lattice constants and internal parameter, pressure effects and phase transition pressure were calculated. We have obtained the elastic coefficients, bulk modulus, shear modulus, Young's modulus and Poisson's ratio. We find that two phases of CuInO₂ are indirect band gap semiconductors (F–Γ and H–Γ for 3R and 2H, respectively). Optical properties, including the dielectric function, refractive index, extinction coefficient, reflectivity, absorption coefficient, loss function and optical conductivity have been obtained for radiations of up to 30 eV.     

Controlling spin-orbit coupling strength of bulk transition metal dichalcogenide semiconductors

Transition metal dichalcogenide (TMD) semiconductors are attracting much attention in research regarding device physics based on their unique properties that can be utilized in spintronics and valleytronics. Although current studies concentrate on the monolayer form due to the explicitly broken inversion symmetry and the direct band gap, bulk materials also hold the capability of carrying spin and valley current. In this study, we report the methodology to continuously control the spin-orbit coupling (SOC) strength of bulk TMDs Mo_1-xW_xSe₂ by changing the atomic ratio between Mo and W. The results show the size of band splitting at the K valley the measure of the coupling strength is linearly proportional to the atomic ratio of Mo and W. Our results thus demonstrate how to precisely tune the SOC coupling strength, and the collected information of which can serve as a reference for future applications of bulk TMDs.     

The Urbach tails and optical absorption in layered semiconductor TlGaSe<Subscript>2</Subscript> and TlGaS<Subscript>2</Subscript> single crystals

TlGaSe₂ and TlGaS₂ single crystals were grown by the modified Bridgman-Stockbarger method. We report the result of an experimental study of the optical absorption of TlGaSe₂ and TlGaS₂ crystals. The absorption measurements were performed in steps of 10 K. The direct and indirect band gaps for TlGaSe₂ and TlGaS₂ samples were calculated as a function of temperature. The phonon energies in TlGaSe₂ and TlGaS₂ crystals were calculated as (39±4) and (9±4) meV at 240 K, respectively. At 10 K, direct and indirect band gaps were found as 2.294 and 2.148 eV for TlGaSe₂, 2.547 and 2.521 eV for TlGaS₂ crystals, respectively. The abrupt changes were observed in the direct and indirect band gaps in the some temperature ranges. These changes were interpreted as phase transformation temperatures. The steepness parameters and Urbach energy for TlGaSe₂ and TlGaS₂ samples increased with increasing sample temperature in the range (10–320) K.     

Strain-induced structural and direct-to-indirect band gap transition in ZnO nanotubes

First-principles calculations have been employed to investigate the structural transformation and direct to indirect band gap transition of ZnO nanotubes under uniaxial strain. The results show that armchair and zigzag nanotubes can be transformed to each other via unusual fourfold-coordinated structures under the applied strain. Both the armchair and zigzag nanotubes exhibit direct band gap while the unusual fourfold-coordinated ones display indirect band gap. The origin of such a direct-to-indirect band gap transition is explained based on the analyses of atomic orbital contributions.     

Prediction of Γ-L and L-X crossovers in Ga<Subscript>x</Subscript>Al<Subscript>1-x</Subscript>Sb alloys by empirical pseudopotential method

Using empirical pseudopotential method Γ-L crossover is found for the Ga_0.74Al_0.26Sb. The conduction band minimum is observed to switch at the (0.87, 0, 0) point for Ga_0.51Al_0.49Sb which shifts to the X point for Ga_0.21Al_0.79Sb and remains at X leading finally to indirect band gap in AlSb. Band structure calculations for a large number of alloys are performed and bowing parameters b_X and b_L are proposed for the E_X and E_L respectively. Our findings may serve as directive to select the materials in a range of composition to examine the bowing parameters and thereby effective mass experimentally for the Ga_xAl_1-xSb alloys.     

Analysis of the charge transfer mechanisms responsible for the current-voltage characteristics of Ca<Subscript>4</Subscript>Ga<Subscript>2</Subscript>S<Subscript>7</Subscript>: Eu<Superscript>3+</Superscript> single crystals

The current-voltage characteristics of Ca₄Ga₂S₇: Eu³⁺ single crystals are measured for the first time, and the processes affecting these characteristics are analyzed theoretically. It is demonstrated that Ca₄Ga₂S₇: Eu³⁺ single crystals are high-resistance semiconductors with a resistivity of ～10⁹ Ω cm and a relative permittivity of 10.55. The electrical properties of the studied materials are governed by traps with activation energies of 0.13 and 0.19 eV and a density ranging from 9.5×10¹⁴ to 2.7×10¹⁵ cm^?3. The one-carrier injection is observed in weak electric fields. In electric fields with a strength of more than 4×10³ V/cm, traps undergo thermal field ionization according to the Pool-Frenkel mechanism. At low temperatures and strong fields (160 K and 5×10⁴ V/cm), the electric current is most likely due to hopping conduction by charge carriers over local levels in the band gap in the vicinity of the Fermi level.     

First principle calculation of accurate native defect levels in CaF<Subscript>2</Subscript>

We report on the first principle density functional calculation of the charge transition levels of native defects (vacancies and interstitials) in CaF₂ structure. The transition level was defined as the Fermi level where two charge states of given defect have the same formation energy. The common error in the band gap inherited to semiclocal density functional has been accounted for by incorporating the hybrid density functional method, leading to correct placement of the transition levels within the band gap. The band gap size from hybrid calculation has been validated using the full potential, Linearized Augmented Planewave method with the Modified-Becke-Johnson exchange potential. Prior to level calculations, we ensured that an agreement between the formation energies from small (95–97 atoms) and large (323–325 atoms) supercells was achieved after applying the Makov-Payne correction method. Our calculated transition level for the anion vacancy was 2.97 eV below the conduction band, agreeing with the experimental optical absorption band at 3.3 eV associated with the electron transition from the ground state F-center to the conduction band in CaF₂.