YAG laser-induced β-BaB2O4 crystalline dot formation in Sm2O3–BaO–B2O3 glasses

A continuous-wave (CW) YAG laser (power: 0.75–0.9 J/s, irradiation time: 15 s–15 min) with a wavelength of 1064 nm is irradiated to 11.1Sm₂O₃·44.4BaO·44.4B₂O₃ glass, and the formation of β-BaB₂O₄ (β-BBO) crystalline dots with a diameter of 30–150 μm is confirmed from micro-Raman spectra. β-BBO crystals with around 200 μm length grow towards the interior of the glass. The incorporation of Sm³⁺ into β-BBO crystalline dots is suggested from micro-Raman and fluorescence spectra. The second harmonic generation is detected from the array (10×10=100 dots) of β-BBO crystalline dots, indicating that each crystalline dot formed by YAG laser irradiation is a nonlinear optical crystal. CW YAG laser irradiation to glass with Sm³⁺ ions is a nice technique for a spatially controlled crystal growth.     

Fabrication and characteristics of N-doped β-Ga2O3 nanowires

Undoped and N-doped  β-Ga₂O₃ nanowires (NWs), using NH₃ as the dopant source, were successfully fabricated by the CVD method on Si substrates. The microstructure, morphology, element composition and carrier concentration of the samples were characterized by XRD, SEM, TEM, and EDX. The results revealed that well-aligned undoped NWs were perpendicular to the substrates. Comparing with undoped β-Ga₂O₃ NWs, the morphology of N-doped β-Ga₂O₃ NWs showed a significant change and they were randomly oriented relative to the substrates. As the NH₃ flow was increased, the microstructure of the sample presented a lot of branched-like and trumpet-shaped structures. Simultaneously, a rougher surface has been attained. PL spectrum measurements showed that N-doped β-Ga₂O₃ NWs had ultraviolet (UV), blue and green emission peaks because of the N-doped process. Furthermore, micro-scale undoped β-Ga₂O₃/N-doped β-Ga₂O₃ homojunction structures were fabricated. The I–V property of the fabricated N-doped β-Ga₂O₃ microwire and β-Ga₂O₃/N-doped β-Ga₂O₃ microwire homojunction were compared. I–V results testified that N-doped β-Ga₂O₃ NWs showed p-type conductivity.     

Pr2O3,Sm2O3,Eu2O3及Dy2O3掺杂SrTiO3的发光光谱

SrTiO_3粉末分别用Pr_2O3、Sm_2O_3、Eu_2O_3以及Dy_2O_3掺杂处理后,以SrTiO_3能吸收的光波(≤387nm)激发后发出的荧光具有稀土离子的发光特征。     

H2-induced changes in electrical conductance of β-Ga2O3 thin-film systems

H₂-induced changes of electrical conductivity in polycrystalline, undoped -Ga₂O₃ thin films in the temperature range of 400–650° C are described. The sheet conductance of these films depends reversibly, according to a power law p ^1/3, on the partial pressure of hydrogen in the ambient atmosphere of the Ga₂O₃ film. A bulk vacancy mechanism is excluded by experiments and it is shown that the interaction is based on a surface effect. Changes in conductance are discussed to result from the formation of an accumulation layer due to chemisorption on the grain surfaces. Typical coverages are determined to be approximately 10^–4 ML for pH₂=0.05 bar and T=600° C. A possible explanation of the p ^1/3 power law is provided.     

Enhanced photocatalytic performance of novel self-assembled floral β-Ga2O3 nanorods

Self-assembled monoclinic phase of novel floral β-Ga₂O₃ nanorods were prepared using reflux condensation method by controlled precipitation of metal cations with urea. The structural and morphological properties were investigated by X-ray powder diffraction, Raman spectroscopy and Scanning electron microscope. Single-crystalline nanorods with size 100 nm involved in the self-assembly process to form flowery pattern have diameter ～1 μm with surface area 40.8 m²/g confirmed from transmission electron microscope and Brunauer–Emmett–Teller analysis. The band gap energy of 4.59 eV was evaluated from the UV–vis diffuse reflectance spectrum and the photoluminescence spectrum displayed the characteristic luminescence and blue-light emission peaks. Further, the photocatalytic activity of novel β-Ga₂O₃ floral nanorods towards the photodegradation of Rhodamine B in aqueous solution under ultra violet light irradiation showed better photocatalytic activity than the commercial photocatalyst Degussa P25 TiO₂.     

A self-powered β-Ga2O3/CsCu2I3 heterojunction photodiode responding to deep ultraviolet irradiation

In this paper, a lead-free halide perovskite CsCu₂I₃ film with high stability was prepared by the anti-solvent assisted crystallization method. Then, we coupled it with Ga₂O₃ to prepare a corresponding heterojunction deep ultraviolet (UV) photodetector. After testing, we concluded that the photodetector is sensitive to 254 nm UV light. The photodetector has good reproducibility, and has an ultra-high photo-to-dark current ratio (PDCR) of more than 10⁵. In addition, under a bias of 10 V and an illuminated intensity of 200 μW/cm², the responsivity (R) and specific detectivity (D*) reached 20 mA/W and 10⁷ cm Hz^1/2 W⁻¹ (Jones), and the external quantum efficiency (EQE) is 10%. Meanwhile, the prepared photodetector could operate at zero bias, i.e., self-powered operation, along with a photocurrent of about 1 nA under illumination with UV light intensity of 200 μW/cm².     

Ga2O3组分对Tm 3+掺杂GeO2-Ga2O3-Li2O-BaO-La2O3玻璃的光谱性能影响

制备了Tm3 (8.0mol%)掺杂(77-x)GeO2-xGa2O3-8Li2O-10BaO-5La2O3(x=4,8,12,16)系列玻璃.系统地研究了Ga2O3从4mol%变化到16mol%时,玻璃的光谱性质与热学性质的变化规律.差热分析表明,随着Ga2O3含量的增加,锗酸盐玻璃的热稳定性增加.运用Judd-Ofelt(J-O)理论计算得到了Tm3 在不同Ga203含量的GeO2-Ga2O3-Li2O-BaO-La2O3玻璃中的J-O强度参数(Ω2,Ω4,Ω6)及Tm3 各激发能级的自发跃迁概率、荧光分支比以及辐射寿命等光谱参量.在808nm激光二极管的激发下,测试并分析了Ga2O3对Tm3 荧光光谱特性的影响.随着Ga2O3从4t001%增加到16mol%,Tm3 在1.8μm处的荧光强度呈现先减弱后增强的特性.当Ga2O3含量大约在12mol%时,Tm3 在1.8μm处的荧光强度最弱,受激发射截面达到最小.还初步讨论了Ga2O3对玻璃结构与光谱参数的影响规律.     

Eu3+掺杂Bi2O3-TeO2-B2O3-ZnO玻璃光谱性质

测量了Eu3+（1 mol%）掺杂(60-χ)Bi2O3-χ TeO2-30B2O3-10ZnO（χ＝5,10,20,30，摩尔百分比）玻璃的吸收光谱、发射光谱、激发光谱以及声子边带谱.根据稀土离子Eu3+光学跃起矩阵元的特点，从发射光谱获得了Eu3+光学跃起的J-O参数Ω2与Ω4.结果显示,强度参量Ω2随着Bi2O3量的增加与TeO2量的减少而减小，表明材料的对称性提高， Eu-O键强减弱，共价性减弱.随着Bi2O3量的增加，电－声子偶合减弱,材料的热稳定性大幅度提高.     

Bi2O3—Sb2O3二元系的研究

本文用 X 射线衍射及差热-热重分析方法研究了 Bi_2O_3-Sb_2O_3二元系在 N_2和空气中的相关系.研究结果表明,在 N_2中发生自氧化-还原化学反应5Bi_2O_3+3Sb_2O_3→4Bi+6BiSbO4在空气中 Bi 和 Sb 分别主要以+3和+5价的形式存在.Sb 在 Bi_2O_3中的溶解度不超过3mol%.形成三种化合物:Bi3SbO_7、Bi_5Sb_2O_(12.5)和 BiSbO_4.前两者为包品反应产物,后者为固液同份化合物.BiSbO_4的熔点为1276℃.BiSbO_4与Sb_2O_4属共晶反应.并讨论了Sb 对 Bi-Sr-Ca-Cu-O 体系形成超导相的影响.     

Density of States and Interband Light Absorption in β-Ga2O3 Thin Films

Journal of Applied Spectroscopy - The long-wavelength edge of the fundamental absorption band of β-Ga2O3 thin films obtained by radio-frequency ion-plasma sputtering is studied. The edge of...     

Effects of preparation parameters on growth and properties of β-Ga2O3 film

The Ga$_{2}$O$_{3}$ films are deposited on the Si and quartz substrates by magnetron sputtering, and annealing. The effects of preparation parameters (such as argon-oxygen flow ratio, sputtering power, sputtering time and annealing temperature) on the growth and properties ($e.g.$, surface morphology, crystal structure, optical and electrical properties of the films) are studied by x-ray diffractometer (XRD), scanning electron microscope (SEM), and ultraviolet-visible spectrophotometer (UV-Vis). The results show that the thickness, crystallization quality and surface roughness of the $\beta $-Ga$_{2}$O$_{3}$ film are influenced by those parameters. All $\beta $-Ga$_{2}$O$_{3 }$films show good optical properties. Moreover, the value of bandgap increases with the enlarge of the percentage of oxygen increasing, and decreases with the increase of sputtering power and annealing temperature, indicating that the bandgap is related to the quality of the film and affected by the number of oxygen vacancy defects. The $I$-$V$ curves show that the Ohmic behavior between metal and $\beta $-Ga$_{2}$O$_{3}$ films is obtained at 900 ${^\circ}$C. Those results will be helpful for the further research of $\beta $-Ga$_{2}$O$_{3}$ photoelectric semiconductor.     

EPR Study of Nd3☎ Ions in β-BaB2O4 Single Crystals

An Electron Paramagnetic Resonance (EPR) study of Nd^3? ions in single crystals of the low-temperature phase of barium borate (β-BaB₂O₄ or BBO) is presented. The EPR spectra show the existence of a minimum of three different Nd^3? centres. The g-matrices for three of the centres have been determined from the analysis of the angular dependencies of the spectrum in two planes of the crystal. This study allows us to conclude that neodymium is incorporated in the low-symmetry Ba^2? site. Possible reasons for the appearance of various Nd^3? centres are discussed.     

ICP-AES同时测定铬质引流剂中的Cr2O3、Al2O3、Fe2O3和MgO

探讨了电感耦合等离子体-原子发射光谱法(ICP-AES)测定铬质引流剂中Cr2O3、Al2O3、Fe2O3和MgO的分析条件.试样经过氧化钠熔融分解,盐酸酸化,采用内标加入法,利用ICP光谱仪于所推荐的波长处,测量溶液中铬、铝、铁、镁元素对钇内标元素的相对强度,根据标准溶液绘制的校准曲线计算出待测元素氧化物的质量分数.对该方法进行精密度试验,相对标准偏差(RSD,n=8)均小于1.0％,本测试方法简单、快速、精度高,将该方法用于铬质引流剂中Cr2O3、Al2O3、Fe2O3和MgO含量的测定,取得满意效果.     

Specific Features of the Local Structure and Transport Properties of ZrO2–Sc2O3–Y2O3 and ZrO2–Sc2O3–Yb2O3 Crystals

Optics and Spectroscopy - The specific features of the local structure of ZrO2–Sc2O3–Y2O3 and ZrO2–Sc2O3–Yb2O3 crystals are revealed by optical spectroscopy using the Eu3+...     

KNO3／Al2O3和K2CO3／Al2O3的强碱性研究

采用ＣＯ２－ＴＰＤ及Ｈａｍｍｅｔｔ批示剂法测定了ＫＮＯ３／Ａｌ２Ｏ３及Ｋ２ＣＯ３／Ａｌ２Ｏ３样品的碱量和碱强度。当ＫＮＯ３，Ｋ２ＣＯ３的负载量低于其单层分散阈值时，能在ＡｌＯ３均匀分布并产生强度为１８．４的强碱位；高于其单层分散阈值后则能生成强度为２７．０的超强碱位。     

光谱纯Y2O3,La2O3,Lu2O3中微量杂质的光致发光谱研究

测定了光谱纯稀土化合物Ｙ２Ｏ３，Ｌａ２Ｏ３，Ｌｕ２Ｏ３中微量杂质在４８８．０ｎｍ和５１４．５ｎｍ激光线激发下的光致发光谱以及在可见光４４５～７４１ｎｍ范围内吸收谱，Ｙ２Ｏ３，Ｌｕ２Ｏ３样品在４４８．０ｎｍ和５１４．５ｎｍ激光激发下都有发光效应，而Ｌａ２Ｏ３样品只在４８８．０ｎｍ激光激发下才发光，分析了结果表明，Ｙ２Ｏ３，Ｌａ２Ｏ３，Ｌｕ２Ｏ３的发光谱分别是由其存在的微量Ｅｒ＾３＋，Ｓｍ＾３＋和Ｅｕ     

CuO/Al2O3、CuO/CeO2-Al2O3和CuO/La2O3-Al2O3催化剂中CuO物种被CO氧化的比较

用浸渍法制备了CuO/Al2O3 (Cu/Al)、CuO/CeO2- Al2O3 (Cu/CeAl)和CuO/La2O3-Al2O3(Cu/LaAl)催化剂. 通过原位XRD、Raman和H2-TPR方法， 对催化剂中的CuO物种以及CuO-Al2O3的固-固相反应进行了表征. 结果表明，对于Cu/Al催化剂，CuAl2O4存在于CuO与Al2O3层之间，CuO以高分散和晶相两种相态存在于催化剂的表层；对于Cu/CeAl催化剂，除了少量高分散和晶相的CuO存在于表层外，大部分CuO迁移到了CeO2的内层，     

Spectral dispersion of linear optical properties for Sm2O3 doped B2O3–PbO–Al2O3 glasses

Glasses having composition (B₂O₃)₂₅ (PbO)₇₀ (Al₂O₃)₅ (Sm₂O₃)_x ,where x=0, 0.5, 1, 2, 3 and 5 g were prepared using the normal melt quench technique. Spectral reflectance and transmittance at normal incidence of the glass samples are recorded with a spectrophotometer in the spectral range 220–2200 nm. These measured values are introduced into analytical expressions to calculate the real and imaginary parts of the refractive indices. Wemple–DiDomenico single oscillator model and one-term Sellmeier dispersion relations are used to model the real refractive indices. Dispersion parameters such as: single oscillator energy, dispersion energy, lattice oscillating strength, average oscillator wavelength, average oscillator strength and Abbe's number are deduced and compared. Absorption dispersion parameters such as: Fermi energy, optical energy gap for direct and indirect transitions, Urbach energy and steepness parameter are calculated. Effects of doping Sm₂O₃ on these linear optical parameters are investigated and interpreted.     

Broadband 1.5-μm emission of high erbium-doped Bi2O3–B2O3–Ga2O3 glasses

High Erbium-doped glass showing the wider 1.5-μm emission band is reported in the Bi₂O₃–B₂O₃–Ga₂O₃ system and its thermal stability and optical properties such as absorption, emission spectra, absorption and stimulated emission cross-sections and fluorescence lifetime are investigated. Compared with other glass hosts, the gain bandwidth properties of high Er³⁺ content in BBG glass are better than those of tellurite, germanate, silicate and phosphate glasses. The broad and flat ⁴I_13/2→⁴I_15/2 emission and the larger stimulated emission cross-section of Er³⁺ ions around 1.5 μm enable it to be used as a host material for potential broadband optical amplifiers at C and L bands in the microchip configuration.     

Electronic structures and optical properties of Zn-doped β-Ga2O3 with different doping sites

<正>The electronic structures and optical properties of intrinsicβ-Ga₂O₃ and Zn-dopedβ-Ga₂O₃ are investigated by first-principles calculations.The analysis about the thermal stability shows that Zn-dopedβ-Ga₂O₃ remains stable. The Zn doping does not change the basic electronic structure ofβ-Ga₂O₃,but only generates an empty energy level above the maximum of the valence band,which is shallow enough to make the Zn-dopedβ-Ga₂O₃ a typical p-type semiconductor.Because of Zn doping,absorption and reflectivity are enhanced in the near infrared region.The higher absorption and reflectivity of Zn_Ca（2） than those of Zn_Ca（1）are due to more empty energy states of Zn_Ca（2）than those of Zn_Ca（1） near E_f in the near infrared region.