Optoelectronic properties of LixAxNbO3 (A=Na, K, Rb, Cs, Fr) crystals

The structural and optoelectronic properties of Li_xA_xNbO₃ (A=Na, K, Rb, Cs, Fr and x=0, 0.5) compounds have been investigated by the generalized gradient approximation within density functional theory. The calculated fundamental direct band gap of pure LiNbO₃ is 3.32 eV. It is found that the substitution of alkali elements drastically change the optoelectronic nature of the compound from direct to indirect bandgap semiconductor and the fundamental gap also decreases. The nature of the compound is ionic with strong bonds between alkali ions and O, while there are partial covalent bonds between Nb and O. The calculated static refractive index of pure LiNbO₃ is 2.43 for the perpendicular plane to the c-axis, while 2.37 for the parallel plane to the c-axis. So these values are intensively dependent on the substitution of alkali metals. The calculated electron energy loss spectra are in good agreement with the experimental results. It also predicts some extra interesting peaks, which have not been observed in experiments.     

Structural, elastic, and electronic properties of orthorhombic NH3BH3: An ab initio study

At the generalized gradient approximation (GGA), the elastic constants of the orthorhombic phase of NH₃BH₃ were calculated with plane-wave pseudo-potential method. Our calculation showed that the orthorhombic phase NH₃BH₃ is a loose and brittle material, as well as hard to be deformed, also we calculated the elastic anisotropies and the Debye temperatures from the elastic constants. And from the band structure and density of state (DOS), we concluded that NH₃BH₃ is a wide-gap semiconductor and the band gap is almost 6.0 eV. The bonds between N atoms and H atoms show a strong covalent characteristic, B atoms and H atoms form ironic bonds, and so as to the B-N bonds. Electrons from the B atoms are absorbed by the H atoms around the B atoms, and the H atoms display electronegativity.     

Complexation of hydrogen by lithium: structures,energies and vibrational spectra of Li+ (H2) n (n = 1–4), Li-H(H2) m and Li-H + (H2) m (m = 1–3)

The interaction of metals with hydrogen is of importance in several areas of technology. Lithium-hydrogen complexes are particularly amenable to theoretical study. Although no stable compound of the Li atom and H₂ has been found, a weak dative interaction forms between the σ bond of H₂ and the positively charged Li atom for Li⁺, Li-H⁺, and Li-H. At least four H₂ molecules can be complexed by Li⁺, and three by Li-H⁺ and Li-H. The presence of the Li ion does not substantially weaken the H₂ bond, nor is the energy of dissociation affected; however, the Li ion does form stable complexes with the dissociated H atoms.     

A nuclear magnetic resonance study of the structural properties and molecular motions of Li2KH(SO4)2 and LiKSO4 single crystals

The structural properties and relaxation mechanisms of Li₂KH(SO₄)₂ crystals were determined using the temperature dependences of NMR spectra and the spin-lattice relaxation times (T₁) of their ¹H, ⁷Li, and ³⁹K nuclei. The results obtained were compared with the previously reported physical properties of LiKSO₄ crystals. The substitution of the potassium ions with protons in the LiKSO₄ crystals were variations in the phase transition temperatures, and the non-appearance of ferroelastic properties. The ⁷Li T₁ for the Li₂KH(SO₄)₂ crystals was much shorter than the ⁷Li T₁ for the LiKSO₄ crystals, and these findings indicate that the presence of the protons in Li₂KH(SO₄)₂ causes the Li ions to move with greater freedom.     

Structural characterization for the chemically Li ion extracted LiyCoO2, LiyCo0.95Ga0.05O2, and LiyCo0.9Ga0.1O2 compounds

Chemical Li ion extraction processes have been carried out for pristine LiCoO₂, LiCo_0.95Ga_0.05O₂, and LiCo_0.9Ga_0.1O₂ compounds by swirling them in 0.35 M H₂SO₄ solution. It is confirmed from XRD patterns that the compounds maintain the two-dimensional framework with pristine-type structure even after the acid treatment up to 12 h. The Ga-substituted compounds keep Li ions for longer time on the acid treatment rather than the LiCoO₂. The average oxidation state of Co ions increases with the Li⁺ ion extraction time up to 3.45+. The local structure refinements for the chemically Li⁺ ion extracted compounds have been investigated by Co K-edge X-ray absorption spectroscopy. The extraction causes the increase of Debye-Waller (DW) factor or static disorder around the Co ion. The DW factor of the Co-Co bond pair less increases with the extraction time for the Li_yCo_0.95Ga_0.05O₂, and Li_yCo_0.9Ga_0.1O₂ compounds than that for the LiCoO₂. The Ga-substituted compounds are more stable against acid treatments than the LiCoO₂, since more basic Ga³⁺ ion retards the structural distortion of the CoO₆ octahedra against the Li ion extraction.     

第一原理研究Sn(O1-xNx)2材料的光电磁性质

基于第一原理的密度泛函理论, 以量子化学从头计算软件 为平台研究了Sn(O_1-xN_x)₂材料的光电磁性能, 分析了体系的态密度、 能带结构、 磁性、 介电虚部及折射率. 计算结果表明, N替代O后, 随着掺杂浓度的增加, 体系的带隙先减小后增大, 掺杂量为12.50%时带隙最窄. 由于N 2p轨道电子的贡献, 在0.55-1.05 eV范围内产生了浅受主能级, 价带和导带处的能级均出现了劈裂及轨道的重叠现象, Sn-O键的键强大于N-O键的键强. 从磁性来看, N原子决定了磁矩的大小. 从介电虚部可知, 掺杂后体系的光学吸收边增宽, 主跃迁峰发生红移, 反射率和介电谱相对应, 各峰值与电子的跃迁吸收有关.     

(Li3N)n(n=1—5)团簇结构与性质的密度泛函研究

用密度泛函理论(DFT)的杂化密度泛函B3LYP方法在6-31G*基组水平上对(Li₃N)_n(n=1—5)团簇各种可能的构型进行几何结构优化,预测了各团簇的最稳定结构. 并对最稳定结构的振动特性、成键特性、电荷特性等进行了理论研究. 结果表明,(Li₃N)_n(n=1—5)团簇中N原子的配位数以4,5较多见,Li—Li键长为0.210—0.259nm,Li原子在桥位时Li—N键长为0.185—0.204nm,Li原子在端位时Li—N键长为0.172—0.178nm;团簇中N原子的平均自然电荷为-2.01e,Li原子的平均自然电荷为+0.67e;Li₃N,(Li₃N)₅团簇有相对较高的动力学稳定性. 关键词： 3N)_n(n=1—5)团簇')" href="#">(Li₃N)_n(n=1—5)团簇 密度泛函理论 结构与性质 储氢材料     

H2 分子在Li3N(110)表面吸附的第一性原理研究

采用第一性原理方法研究了H₂分子在Li₃N(110)晶面的表面吸附. 通过研究H₂/Li₃N(110)体系的吸附位置、吸附能和电子结构发现: H₂分子吸附在N桥位要比吸附在其他位置稳定,此时在Li₃N(110)面形成两个-NH基,其吸附能为1.909 eV,属于强化学吸附;H₂与Li₃N(110)面的相互作用主要是H 1s轨道与N 关键词： 第一性原理 3N(110)')" href="#">Li₃N(110) 2')" href="#">H₂ 吸附和解离     

(HMgN3)n(n=1–5)团簇结构与性质的密度泛函理论研究

利用密度泛函理论在B3LYP/6-311G^*水平上对叠氮化合物(HMgN₃)_n(n=1–5)团簇各种可能构型进行了几何优化,预测了各团簇的最稳定结构. 并对最稳定结构的成键特性、电荷分布、振动特性及稳定性进行理论研究. 结果表明:HMgN₃团簇最稳定结构为直线型;(HMgN₃)_n(n=2,5)团簇最稳定结构为叠氮基中N原子和金属原子相连构成Mg–N–Mg结构;(HMgN₃)_n(n=3,4)团簇最稳定结构为叠氮基与Mg原子相互链接形成的环状结构. 团簇最稳定结构中金属Mg原子均显示正电性,H原子均显示负电性,叠氮基中间的N原子显示正电性、两端的N原子显示负电性,且与Mg原子直接作用的N原子负电性更强. Mg–N键和Mg–H键为典型的离子键,叠氮基内N原子之间是共价键. 团簇最稳定结构的红外光谱分为三部分,其最强振动峰均位于2258–2347 cm^-1,振动模式为叠氮基中N–N键的反对称伸缩振动. 叠氮基在团簇和晶体中结构不变,始终以直线型存在. 稳定性分析显示,(HMgN₃)₃团簇相对于其他团簇更为稳定. 关键词： 3)_n(n=1–5)团簇')" href="#">(HMgN₃)_n(n=1–5)团簇 叠氮基 密度泛函理论 结构与性质     

Structural, electronic and thermodynamic properties of cubic Zn3N2 under high pressure from first-principles calculations

The structural, electronic and thermodynamic properties of cubic Zn₃N₂ under hydrostatic pressure up to 80 GPa are investigated using the local density approximation method with pseudopotentials of the ab initio norm-conserving full separable Troullier-Martin scheme in the frame of density functional theory. The structural parameters obtained at ambient pressure are in agreement with experimental data and other theoretical results. The change of bond lengths of two different types of Zn-N bond with pressure suggests that the tetrahedral Zn-N bond is slightly less compressible than the octahedral bond. By fitting the calculated band gap, the first and second order pressure coefficients for the direct band gap ofthe Zn₃N₂ were determined to be 1.18×10⁻² eV/GPa and −2.4×10⁻⁴ eV/(GPa)², respectively. Based on the Mulliken population analysis, Zn₃N₂ was found to have a higher covalent character with increasing pressure. As temperature increases, heat capacity, enthalpy, product of temperature and entropy increase, whereas the Debye temperature and free energy decrease. The present study leads to a better understanding of how Zn₃N₂ materials respond to compression.     

Theoretical investigation of Cu-containing materials with different valence structure types: BaCu2S2, Li2CuSb,and LiCuS

Optoelectronics research requires cheap materials with a broad spectrum of optical, electronic, and structural properties. The class of Heusler compounds and ternary structures provide many possibilities for finding alternative group IV and III–V semiconductor compounds. This study introduces wider band gap materials for use in solar cells as an alternative to cadmium sulfide buffer layers. The buffer layer is inserted between the absorber layer (p-type) and the transparent window layer (n-type) to enhance the maximum amount of light transmission. Reasonable calculations are reported for the band gaps of copper-containing materials: LiCuS, BaCu₂S₂, and Li₂CuSb. Previous optical analysis measurements of these films determined that the band gaps were 1.8 and 1.9 eV for BaCu₂S₂ and LiCuS, respectively. In general, semiconductor compounds have been studied theoretically, but there are major differences between the experimental and theoretically calculated band gaps. A suitable calculation method for semiconductor compounds is described in this study. For the first time, calculations based on the Engel and Vosko method are introduced for these semiconductor compounds. This method yields band gaps that are comparable to the experimental values, which facilitate the development of microscopic analyses of these compounds. Direct band gaps of 1.15 and 1.7 eV were obtained for BaCu₂S₂ and LiCuS, respectively, whereas the indirect band gap was 0.7 eV for Li₂CuSb.     

Sn1−xBixO2 and Sn1−xTaxO2 (0≤x≤0.75): A first-principles study

The structural, elastic, electronic and optical (x=0) properties of doped Sn_1−xBi_xO₂ and Sn_1−xTa_xO₂ (0≤x≤0.75) are studied using the first-principles pseudopotential plane-wave method within the local density approximation. The independent elastic constants C_ij and other elastic parameters of these compounds have been calculated for the first time. The mechanical stability of the compounds with different doping concentrations has also been studied. The electronic band structure and density of states are calculated and the effect of doping on these properties is also analyzed. It is seen that the band gap of the undoped compound narrowed with dopant concentration, which disappeared for x=0.26 for Bi doping and 0.36 for Ta doping. The materials thus become conductive oxides through the change in the electronic properties of the compound for x≤0.75, which may be useful for potential application. The calculated optical properties, e.g. dielectric function, refractive index, absorption spectrum, loss-function, reflectivity and conductivity of the undoped SnO₂ in two polarization directions are compared with both previous calculations and measurements.     

Structure and electronic properties of Hn@C20 molecule

Density functional theory has been employed to optimize the structure of endohedral doped C₂₀ fullerene. We have also investigated electronic properties. We have found that C₂₀ cage can accommodate up to 8 hydrogen atoms. Some hydrogen atoms get chemisorbed on the inner surface of C₂₀ cage and form C-H bond. Structural deformation is found to increase with increase in H-atoms. From the analysis of electronic properties, we observe that due to endohedral doping of hydrogen atoms inside C₂₀, H-atoms acquire net negative charge by accepting electrons and fullerene molecules acquire positive charge by donating electrons to H-atoms. For endohedral complexes where H₃ triangular molecule formation takes place, the nature of net charge transfer changes, i.e. fractional electronic charge is transferred from H-atoms to fullerene. C₂₀ doped with odd number of H-atoms should be more reactive compared to the even number case. Most of the present results are similar to those of endohedral C₆₀.     

The magnetic properties of oxide spinel Li0.5Fe2.5−2xAlxCrxO4 solid solutions

The exchange interactions (J_BB and J_AB are the intra and the inter-sublattice exchange interactions between neighbouring spins, respectively) are obtained by using the general expressions of canting angle and critical temperature obtained by mean field theory of Li_0.5Fe_2.5−2xAl_xCr_xO₄. The expression of magnetic energy of Li_0.5Fe_2.5−2xAl_xCr_xO₄ is obtained for different spin configurations and dilution x. The saturation magnetisation of Li_0.5Fe_2.5-2xAl_xCr_xO₄ is obtained with different values of dilution x. The magnetic phase diagram of Li_0.5Fe_2.5-2xAl_xCr_xO₄ materials is obtained by high temperature series expansions (HTSEs). The critical exponent associated with the magnetic susceptibility of Li_0.5Fe_2.5−2xAl_xCr_xO₄ is deduced.     

Emission features of Ho ion in Nb2O5, Ta2O5 and La2O3 mixed Li2O-ZrO2-SiO2 glasses

Li₂O-ZrO₂-SiO₂: Ho³⁺ glasses mixed with three interesting d-block elemental oxides, viz., Nb₂O₅, Ta₂O₅ and La₂O₃, were prepared. Optical absorption and photoluminescence spectra of these glasses have been recorded at room temperature. The luminescence spectra of Nb₂O₅ and Ta₂O₅ mixed Li₂O-ZrO₂-SiO₂ glasses (free of Ho³⁺ ions) have also exhibited broad emission band in the blue region. This band is attributed to radiative recombination of self-trapped excitons (STEs) localized on substitutionally positioned octahedral Ta⁵⁺ and Nb⁵⁺ ions in the glass network. The Judd-Ofelt theory was successfully applied to characterize Ho³⁺ spectra of all the three glasses. From this theory various radiative properties, like transition probability A, branching ratio β_r and the radiative lifetime τ_r, for ⁵S₂ emission levels in the spectra of these glasses have been evaluated. The radiative lifetime for ⁵S₂ level of Ho³⁺ ions has also been measured and quantum efficiencies were estimated. Among the three glasses studied the La₂O₃ mixed glass exhibited the highest quantum efficiency. The reasons for such higher value have been discussed based on the relationship between the structural modifications taking place around the Ho³⁺ ions.     

Structural, electronic, elastic and optical properties of fluoro-perovskite KZnF3

We determine the structural, electronic, elastic and optical properties of fluoro-perovskite KZnF₃ using the full potential linear augmented plane wave approach (FP-LAPW) based on the density functional theory (DFT). The exchange-correlation potential is treated by the local density approximation (LDA) and the generalized gradient approximation (GGA). The calculated structural parameters are in good agreement with the available data. We have obtained an indirect band gap. The effect of the pressure on the band gaps is investigated. We evaluate the elastic constants (C_ij), elastic moduli and the Debye temperature. The imaginary and the real parts of the dielectric function ε(ω) and some optical constants are also calculated.     

立方(Ba0.5Sr0.5)TiO3高压诱导带隙变化的第一性原理研究

采用基于密度泛函理论(DFT)的第一性原理计算研究了 (Ba_0.5Sr_0.5)TiO₃ (BST) 晶体在高压下的电子结构及能带变化行为. 研究结果发现,随着压强的增加,BST能带间隙先增加,在压强为55 GPa时达到最大值,然后减小,这些有趣的结果将有助于开发与设计新的BST铁电器件. 进一步地,通过电子态密度和密度分布图的研究分析可知:在低压区域(055 GPa),则是出现的离域现象占主导(电子的离域作用超过键态的作用),从而使带隙减小. 关键词： 钛酸锶钡 第一性原理 高压 能带间隙     

Theoretical study on the oxidation of zigzag silicon carbide nanotubes (SiCNTs) by singlet O2

Singlet O₂ produced upon photoexcitation is a very important oxidative reagent. The study on its reaction with nanotube might be useful not only to evaluate the stability of the nanotube upon air exposure and sunlight, but also to modify the properties of the nanotube. Considering the unique properties and wide applications of silicon carbide nanotube (SiCNT), in this paper, we performed extensive density functional theory (DFT) calculations to study the oxidation of a series of zigzag (n,0) SiCNTs (n=6 to 12) by singlet O₂. It is found that the reaction process contains two steps, namely, (i) [2+2] cycloaddition of a singlet O₂ to the Si–C bond, followed by (ii) the dissociation of the O–O bond, leading to the formation of an epoxide configuration with a highly exothermicity (>4.00 eV). Compared with pure SiCNT, the cycloaddition of singlet O₂ on tube leads to the decrease of the band gap, while the formation of the stable epoxy structure render band gap increase. Our results indicate that the SiCNT is more prone to be degraded after exposure to air and sunlight.     

Electronic structure of (BP)n/(BAs)n (0 0 1) superlattices

An accurate ab initio full potential linear muffin-tin orbital method has been used to investigate the structural, electronic and optical properties of BP, BAs and their (BP)_n/(BAs)_n superlattices (SLs). The exchange-correlation potential is treated with the local density approximation of Perdew and Wang (LDA-PW). The calculated structural properties of BP and BAs compounds are in good agreement with available experimental and theoretical data. It is found that BP, BAs and their alloys exhibit an indirect fundamental band gap. The fundamental band gap decreases with increasing the number of monolayer n. The optical properties show that the static dielectric constant significantly decreases in superlattices compared to their binary compounds.     

Structural, elastic, electronic and optical properties of a new layered-ternary Ta4SiC3 compound

We propose a new layered-ternary Ta₄SiC₃ with two different stacking sequences (α- and β-phases) of the metal atoms along c axis and study their structural stability. The mechanical, electronic and optical properties are then calculated and compared with those of other compounds M₄AX₃ (M=V, Nb, Ta; A=Al, Si and X=C). The predicted compound in the α-phase is found to possess higher bulk modulus than these compounds. The independent elastic constants of the two phases are also evaluated and the results discussed. The electronic band structures for α- and β-Ta₄SiC₃ show metallic conductivity. Ta 5d electrons are mainly contributing to the total density of states (DOS). We see that the hybridization peak of Ta 5d and C 2p lies lower in energy and the Ta 5d-C 2p bond is stronger than Ta 5d-Si 3p bond. Further an analysis of the different optical properties shows the compound to possess improved behavior compared to similar types of compounds.