Processes in condensed inert gases involving excess electrons

Drift of an excess electron in dense and condensed inert gases in external electric field and excitation of atoms by electron impact in these systems are analyzed. The effective potential energy surface for an excess electron at a given electric field strength consists of wells and hills, and the actions of neighboring atoms are therefore separated by saddles of the potential energy. At such atomic densities that the difference of interaction potentials for an excess electron between neighboring wells and hills of the potential energy surface becomes small, the electron mobility is large. This is realized for heavy inert gases (Ar, Kr, Xe) with a negative scattering length of an electron on individual atoms. In these cases, the average potential energy of the electron interaction with atoms corresponds to attraction at low atomic densities and to repulsion at high densities. The transition from attraction to repulsion at moderate atomic densities leads to a maximum of the electron mobility. A gas model for electron drift in condensed inert gases is constructed on the basis of this character of interaction. Due to high electron mobility, condensed inert gases provide high efficiency of transformation of the electric field energy into the energy of emitting photons through drifting electrons. It is shown that, although the role of formation of autodetaching states in the course of electron drift is more important for condensed inert gases than for rare gases, this effect acts weakly on exciton production at optimal atomic densities. The parameters of a self-maintained electric discharge in condensed inert gases as a source of ultraviolet radiation are discussed from the standpoint of electron drift processes.     

Electron clusters in inert gases

This Letter addresses the counterintuitive behavior of electrons injected into dense cryogenic media with negative scattering length L. Instead of strongly reduced mobility at all but the lowest densities due to the polaronic effect involving the formation of density enhancement clusters (expected in the theory with a simple gas-electron interaction successfully applied earlier to electrons in helium where L>0) which should substantially decrease the electron mobility, an opposite picture is observed: with increasing |L| (the trend taking place for inert gases with the growth of atomic number) and the gas density, the electrons remain practically free. An explanation of this behavior is provided based on consistent accounting for the nonlinearity of the electron interaction with the gaseous medium in the gas atom number density.     

Free electron in compressed inert gases

The behavior of excess and intrinsic free electrons inside compressed inert gases is described as a function of pressure by using a pairwise approximation for the electron interaction with atomic surroundings. The change of sign from negative to positive for the xenon atom electric potential inside condensed xenon is predicted to occur at a pressure around 3 GPa, preventing slow electron embedding into solid xenon from the gas phase at higher pressure. To overcome this difficulty, the electrons should be injected into a solid sample just before its pulsed shock loading. The ionization of xenon by pressure and its further metallization are described by decreasing the forbidden gap at the expense of increasing the xenon ground electronic term and simultaneous splitting of the upper ionized electronic state. A good coincidence between the calculated and measured pressure of the dielectric-metal transition in xenon is demonstrated. The text was submitted by the authors in English.     

Electron mobility in a modulation doped AlGaN/GaN quantum well

We consider a two dimensional electron gas confined to a modulation doped AlGaN/GaN quantum well and study the dependence of low field mobility on various parameters such as composition, well width, remote impurity and interface roughness as a function of temperature. GaN is assumed to be in the zincblende structure. Acoustic and optical phonon, ionized remote impurity and interface roughness scatterings are taken into account in mobility calculations. The scattering rates are calculated using the self-consistently calculated wave functions obtained from the numerical solution of Poisson and Schr?dinger equations. Also found from the self-consistent solutions are the potential profile at the junction, the energy levels in the well and electron concentrations in each level. Ensemble Monte Carlo method is used to find the drift velocities of the two dimensional electrons along the interface under an applied field. The mobility of two dimensional electrons is obtained from the drift velocity of electrons. It is found that while remote impurity scattering is very effective for small values of spacer layer and doping concentrations, increasing Al concentration reduces the mobility of electrons. The effect of surface roughness, on the other hand, on mobility is almost independent of well width. The results of our simulations are compatible with the existing experimental data.     

低能电子束照射接地绝缘薄膜的负带电过程

为揭示低能电子束照射接地绝缘薄膜的负带电过程及其机理,建立了同时考虑电子散射与电子输运的计算模型,综合Monte Carlo方法和有限差分法进行了数值模拟,获得了内部空间电荷、泄漏电流和表面电位随电子束照射的演化规律.结果表明,入射电子因迁移、扩散效应会超越通常的散射区域产生负空间电荷分布,并经过一定的渡越时间后到达接地基板,形成泄漏电流,负带电暂态过程则随着泄漏电流的增加而趋于平衡.在平衡状态下,泄漏电流随电子束能量和电流而增大;薄膜净负电荷量和表面电位随膜厚而增加、随电子迁移率的增大而降低,随着电子束 关键词： 绝缘薄膜 电子束照射 带电效应 数值模拟     

Superelastic electron scattering by metastable strontium atoms

Superelastic electron scattering by metastable strontium atoms is experimentally studied using intersecting electron and atomic beams and an electron spectrometer. The energy dependence of the effective cross section of superelastic electron scattering in the energy range 0.15–2.0 eV has been obtained for the first time.     

低速分子离子在固体电子气中的散射与能量损失

利用量子力学中的电子分子散射理论，研究了低速双原子分子离子在固体电子气中的散射与能量损失，重点讨论了两离子之间的干扰效应对能量损失的影响。根据原子的ｉｎｄｅｐｅｎｄａｎｔ ｐａｒｔｉｃｌｅ－ｍｏｄｅｌ（ＩＰＭ）势和变相法，确定了单原子离子的散射相移和阻止本领，并与非线性密度泛函理论的结果进行了比较。 关键词：     

Townsend coefficient,escape curve,and fraction of runaway electrons in copper vapor

Ionization and drift characteristics of electrons in copper vapor in the presence of an external electric field are analyzed. In contrast to normal gases, in copper vapor, the excitation energy of lower states is significantly lower than the ionization potential and the excitation cross section is several times greater than the ionization cross section at the incident-electron energy on the order of the ionization energy. This can affect the characteristics of electron bunching in gas. It is demonstrated that, as in previously studied gases, the notion of the Townsend coefficient remains meaningful even in the presence of strong fields at which the electric force exceeds the electron drag force acting in gas. The dependences of the main ionization and drift characteristics on the reduced field strength, the escape curve (which separates the region of effective electron multiplication and the region where electrons leave the discharge gap without multiplication), and the curves of equal efficiency for the formation of runaway electrons are obtained. It is demonstrated that a relatively high excitation cross section of copper levels leads to a sharper peak on the dependence of the Townsend coefficient on the field strength and a narrower region of the effective electron multiplication in comparison with previously studied gases.     

AlGaN插入层对InAlN/AlGaN/GaN异质结散射机制的影响

InAlN/AlN/GaN异质结中,名义上的AlN插入层实为Ga含量很高的AlGaN层, Al, Ga摩尔百分比决定了电子波函数与隧穿几率,因此影响与InAlN/AlGaN势垒层有关的散射机制.本文通过求解薛定谔-泊松方程与输运方程,研究了AlGaN层Al摩尔百分含量对InAlN组分不均匀导致的子带能级波动散射、导带波动散射以及合金无序散射三种散射机制的影响.结果显示:当Al含量由0增大到1,子带能级波动散射强度与合金无序散射强度先增大后减小,导带波动散射强度单调减小;在Al含量为0.1附近的小组分范围内,合金无序散射是限制迁移率的主要散射机制,该组分范围之外,子带能级波动散射是限制迁移率的主要散射机制;当Al摩尔百分含量超过0.52,三种散射机制共同限制的迁移率超过无插入层结构的迁移率, AlGaN层显示出对迁移率的提升作用.     

Energy dependence of electron mobility in metallic nanowires

We study the electron drift mobility in a metallic nanowire (at low temperature) as a function of both electron energy and electrochemical potential from considerations relative to energy-dependent conductance and carrier spatial density. In fact, a mathematical expression for the electron mobility, when electronic energy equals Fermi energy (resonant states), valid for negative values of the electrochemical potential is derived.     

Electronic excitation of the matrix during drift of excess electrons through solid xenon

It is shown experimentally that the exciton luminescence λ=172 nm) quantum yield excited by excess electrons drifting through solid xenon at 77 K in fields of 10 kV/cm amounts to 20±5 per electron and that luminescence takes place during the entire drift process. A CW bulky discharge through solid xenon (with a current up to 20 A/cm²) is realized, and intense visible luminescence due to excitation of impurities by electron impacts is observed. The prospects for using solid rare gases as matrices for studying processes in low-temperature plasmas and for creating effective electric energy converters in the vacuum ultraviolet range are discussed.     

Electron transport in wurtzite InN

Using ensemble Monte Carlo simulation technique, we have calculated the transport properties of InN such as the drift velocity, the drift mobility, the average electron, energy relaxation times and momentum relaxation times at high electric field. The scattering mechanisms included scattering mechanisms are polar optical phonon, ionized impurity, acoustic phonon and intervalley phonon. It is found that the maximum peak velocity only occurs when the electric field is increased to a value above a certain critical field. This critical field is strongly dependent on InN parameters. The steady-state transport parameters are in fair agreement with other recent calculations.     

High field transport properties in a GaN/AlGaN heterostructure

The drift velocity, electron temperature, electron energy and momentum loss rates of a two-dimensional electron gas are calculated in a GaN/AlGaN heterojunction (HJ) at high electric fields employing the energy and momentum balance technique, assuming the drifted Fermi–Dirac (F–D) distribution function for electrons. Besides the conventional scattering mechanisms, roughness induced new scattering mechanisms such as misfit piezoelectric and misfit deformation potential scatterings are considered in momentum relaxation. Energy loss rates due to acoustic phonons and polar optical phonon scattering with hot phonon effect are considered. The calculated drift velocity, electron temperature and energy loss rate are compared with the experimental data and a good agreement is obtained. The hot phonon effect is found to reduce the drift velocity, energy and momentum loss rates, whereas it enhances the electron temperature. Also the effect of using drifted F–D distribution, due to high carrier density in GaN/AlGaN HJs, contrary to the drifted Maxwellian distribution function used in the earlier calculations, is brought out.     

Analysis of the concentration of C60 fullerenes in single wall carbon nanotubes

Single wall carbon nanotubes filled with C₆₀ were analyzed using resonance Raman scattering and electron energy loss spectroscopy. In order to obtain concentrations of the fullerene molecules inside the tubes, the scattering intensity from the fullerenes relative to that from the tubes was used. Since the scattering intensity from the tubes is subject to strong fluctuations, the determination of the concentrations is shown to require averaging of results from different lasers and from all observable Raman lines. The fluctuations are shown to be intrinsic and a consequence of photoselective resonance scattering. Calibration of absolute concentrations can be obtained from electron energy loss spectroscopy performed on the same samples. Samples with three different diameters were analyzed and good agreement between the fullerene concentrations measured by the two methods was obtained. Received: 20 September 2002 / Accepted: 4 November 2002 / Published online: 10 March 2003 RID="*" ID="*"Corresponding author. Fax: +43-1/4277-51375, E-mail: kuzman@ap.univie.ac.at     

Normal phonon-phonon scattering processes and the thermal conductivity of germanium crystals with isotope disorder

The influence of the normal phonon-phonon scattering processes on the thermal conductivity was theoretically studied for germanium crystals with various degrees of the isotope disorder. The theory takes into account redistribution of the phonon momentum in the normal scattering processes both inside each oscillation branch (Simons mechanism) and between various phonon oscillation branches (Herring mechanism). Contributions to the thermal conductivity due to the drift mobility of the longitudinal and transverse phonons are analyzed. It is shown that the momentum redistribution between longitudinal and transverse phonons according to the Herring relaxation mechanism leads to a significant suppression of the drift motions (and to the corresponding drop in contribution to the thermal conductivity) of the longitudinal phonons in isotopically pure germanium crystals. The results of the thermal conductivity calculations involving the Herring relaxation mechanism agree well with the experimental data available for germanium crystals with various degrees of the isotope disorder.     

Electron mobility limited by surface and interface roughness scattering in AlxGa1-xN/GaN quantum wells

The electron mobility limited by the interface and surface roughness scatterings of the two-dimensional electron gas in AlxGa1-xN/GaN quantum wells is studied. The newly proposed surface roughness scattering in the AlGaN/GaN quantum wells becomes effective when an electric field exists in the AlxGa1-xN barrier. For the AlGaN/GaN potential well, the ground subband energy is governed by the spontaneous and the piezoelectric polarization fields which are determined by the barrier and the well thicknesses. The thickness fluctuation of the AlGaN barrier and the GaN well due to the roughnesses cause the local fluctuation of the ground subband energy, which will reduce the 2DEG mobility.     

Barrier penetration effects for electrons in quantum wells: screening,mobility, and shallow impurity states

A two-dimensional electron gas in a quantum well confined by finite barriers is considered. We present analytical expressions for the finite confinement effects of a square-well potential and calculate the electron-electron interaction potential, the electron-impurity interaction potential, the interface-roughness scattering potential and the alloy-disorder scattering potential. The dielectric function of the interacting electron gas, the mobility (for charged-impurity scattering, for interface-roughness scattering, and for alloy-disorder scattering), and the binding energy of hydrogenic impurities (screened and unscreened) are discussed.     

On ballistic transport in carbon nanotubes

We investigate theoretically the ballistic regime exhibited by conduction electrons in multiwalled carbon nanotubes in relation to the conductance quantization in these tubes. Starting from the fact that electron drift mobility is quantized in multiwall tubes, essential aspects related to both ballistic and diffusive regimes are discussed.     

Interference effects in the theory of multiphoton laser-simulated bremsstrahlung for electron wave packets that are broad in their momentum representation

The interference peculiarities of absorption and emission of external laser field quanta by a spatially narrow electron wave packet during its scattering at a potential center are considered. The angular and energy distributions for an electron due to scattering in a laser field are obtained and analyzed within the framework of the perturbation theory based on interaction with the potential center. A new mechanism of effective heating of plasma produced in a cluster under the effect of intense external laser field is found. Drastic changes in angular distribution due to the interference of incident and scattered parts of an electron wave packet are revealed.     

The influence of abrupt electric field variations on the distribution function of hot electrons

Some analytical models of quiescent hot electron distributions are extended to the transient conditions, in order to describe the response of hot electrons to step changes in the magnitude of the electric field. These models apply to semiconductors having one or several equivalent energy minima in the conduction band, and isotropic lattice scattering due to low-energy acoustic phonons (elastic in-valley scattering) and to high energy single-level acoustic phonons (inelastic inter-valley scattering) or dispersionless optical phonons (inelastic in-valley scattering). Step changes in the field magnitude are considered with respect to the time and space (one-dimensional) variables, separately. In both cases, the spherically-symmetrical term ƒ_O of the electron distribution function may be expressed using a Laguerre polynomial expansion in the energy variable. For a positive step change in field magnitude, transient electron drift velocities in excess of the steady-state “scattering-limited” values are found in both silicon and germanium.