Diode-pumped passively Q-switched and mode-locked Nd:Lu<Subscript>0.15</Subscript>Y<Subscript>0.85</Subscript>VO<Subscript>4</Subscript> laser with a GaAs saturable absorber

By using a-cut Nd:Lu_0.15Y_0.85VO₄ mixed crystal as laser gain medium, a diode-pumped passively Q-switched and mode-locked (QML) laser with a GaAs saturable absorber in a Z-type folded cavity is demonstrated for the first time. The Q-switched mode-locked laser pulses with about 90% modulation depth are obtained as long as the pump power reached the oscillation threshold. The repetition rate of the passively Q-switched pulse envelope ranges from 50 to 186 kHz as the pump power increases from 0.915 to 6.520 W. Under an incident pump power of 6.52 W, the QML pulses with the largest average output power of 694 mW, the shortest pulse width of 200 ns and the highest pulse energy of 3.73 μJ are obtained. The mode-locked pulse width inside the Q-switched envelope is estimated to be about 275 ps. The experimental results show that Nd:Lu_0.15Y_0.85VO₄ is a promising mixed crystal for QML laser.     

Experimental study on doubly QML Nd:Lu<Subscript>0.15</Subscript>Y<Subscript>0.85</Subscript>VO<Subscript>4</Subscript> laser with AO modulator and central SESAM

By using double-mixed crystal Nd:Lu_0.15Y_0.85VO₄ as laser medium, a diode-pumped doubly Q-switched and mode-locked (QML) Nd:Lu_0.15Y_0.85VO₄ laser with acousto-optic (AO) modulator and central semiconductor saturable absorption mirror (SESAM) is realized for the first time. The Q-switched envelope modulation depth is nearly 100%.The average output power and the pulse width of the Q-switched envelope etc. for different AO modulator repetition rates have been measured. The experimental result show that Nd:Lu_0.15Y_0.85VO₄ crystal is an excellent laser medium for doubly QML lasers.     

Cavity-dumped mode-locked Nd:GdVO<Subscript>4</Subscript> laser at low repetition rate

We report a cavity-dumped mode-locked Nd:GdVO₄ laser with semiconductor saturable absorber mirrors at low repetition rate. In this laser system, a single mode-locked laser pulse is generated, amplified and cavity-dumped by means of electro-optic modulator at 1 to 10 Hz repetition rate. The energy of the pulse is about 150 nJ and the pulse duration is determined to be 10 ps.     

Passively Q-switched mode-locking in a diode-pumped Nd:LuVO<Subscript>4</Subscript> laser with V:YAG

A passively Q-switched and mode-locked Nd:LuVO₄ laser with V:YAG at 1.34 μm was successfully demonstrated. Comparisons between c-cut and a-cut Nd:LuVO₄ lasers were experimentally made. The maximum average output power of 170 mW, the highest Q-switched pulse energy of 4.5 μJ were obtained in c-cut Nd:LuVO₄ laser. The duration of mode-locked pulse was estimated to be less than 540 ps with repetition rate of 110 MHz.     

Adjustable picosecond pulse duration in a LD end pumped SESAM passively mode-locked Nd:YVO<Subscript>4</Subscript> laser

With adjustable pulse durations, a semiconductor saturable absorber mirror (SESAM) passively mode-locked picosecond Nd:YVO₄ laser was studied. The pulse duration was adjustable from 20 to 80 ps by using intracavity etalons of different thicknesses.     

Experimental study on a diode-pumped passively mode-locking Nd:GdVO<Subscript>4</Subscript>/SESAM laser

We demonstrate a low-threshold and efficient diode-pumped passively continuous wave (CW) mode-locked Nd:GdVO₄ laser with a reflective semiconductor saturable absorber mirror (SESAM). The threshold for the continuous wave was 0.36 W, and it is the lowest threshold for a continuous wave in a passively mode-locked Nd:GdVO₄ laser to our knowledge. The maximum average output power of 1.82 W was obtained at a pump power of 6.65 W with a slope efficiency of about 29%. The CW mode-locked pulse duration was measured to be about 10.5 ps with a 116-MHz repetition rate.     

Passive mode-locked Nd:YVO<Subscript>4</Subscript> laser using a multi-walled carbon nanotube saturable absorber

We report a passive mode-locked Nd:YVO₄ laser pumped by 880 nm LD using a transmission-type multi-walled carbon nanotube saturable absorber. At the pump power of 6.1 W, the average output power of 0.8 W of continuous wave mode-locked laser with optical conversion efficiency of 13.1% was generated. The repetition rate and pulse energy of the mode-locked pulse were 88 MHz and 9.1 nJ, respectively.     

Characteristics of diode-pumped dual-loss-modulated Q-switched and mode-locked Nd:Lu<Subscript>0.15</Subscript>Y<Subscript>0.85</Subscript>VO<Subscript>4</Subscript> laser

A diode-pumped dual-loss-modulated Q-switched and mode-locked (QML) Nd:Lu_0.15Y_0.85VO₄ laser with acousto-optic (AO) modulator and Cr⁴⁺:YAG saturable absorber is presented. The stable QML laser pulse with high peak power and complete modulation depth has been obtained. The QML laser characteristics such as the pulse width, single-pulse energy etc. have been measured for different small-signal transmissions (T ₀) of Cr⁴⁺:YAG, different reflectivity (R) of output coupler and modulation frequencies of the AO modulator (f _p ). The results show that the pulse energy increases with decreasing f _p and increasing T ₀, while the pulse width decreases with decreasing f _p and increasing T ₀. At f _p = 10 kHz, R = 90%, and T ₀ = 91%, the highest pulse energy and peak power of mode-locked pulses is obtained.     

Passively Q-switched laser performance of a diode-pump mixed Nd:Lu<Subscript>0.15</Subscript>Y<Subscript>0.85</Subscript>VO<Subscript>4</Subscript> crystal

A diode-pumped passively Q-switched Nd:Lu_0.15Y_0.85VO₄ laser with a GaAs output coupler is demonstrated. By using a mixed crystal Nd:Lu_0.15Y_0.85VO₄ as laser medium, the passively Q-switched laser can generate shorter pulse width with higher peak power in comparison with the passively Q-switched Nd:LuVO₄ or Nd:YVO₄ lasers under the same laser cavity. At the incident pump power 11.9 W, the minimum pulse width of 3.23 ns and the maximum peak power 1.67 kW can be obtained. The average output power and the pulse repetition rate of the laser are also measured. The experimental results show that the mixed crystal is a promising laser medium for shorter Q-switched pulse with higher peak power.     

Diode-pumped simultaneously Q-switched and mode-locked Nd:GdVO<Subscript>4</Subscript>/LBO red Laser

A diode-end-pumped simultaneously Q-switched and mode-locked intracavity frequency doubled Nd:GdVO₄/LBO red laser with an acousto-optic Q-switch was realized. The maximum red laser output power of 250 mW was obtained at the incident pump power of 8.3 W and the repetition rate of 10 kHz. At 5 kHz, the maximum mode-locking modulation depth of about 80% was achieved with the Q-switched pulse width of 440 ns. The red mode-locked pulse inside the Q-switched pulse had a repetition rate of 115 MHz, its average pulse width was estimated to be about 350 ps.     

High power passively mode-locked Nd:YVO<Subscript>4</Subscript> laser using graphene oxide as a saturable absorber

We report on a passively mode-locked Nd:YVO₄ laser using a novel graphene oxide saturable absorber fabricated by vertical evaporation method. An 880 nm LD pump source was used to reduce the thermal load of the laser crystal. At the pump power of 7.4 W, 1.2 W average output power of continuous wave mode-locked laser with optical conversion efficiency of 16.2% was achieved. To the best of our knowledge, this is the highest output power of passively mode-locked solid-state laser using graphene oxide saturable absorber. The repetition rate of passively mode-locked pulse was 88 MHz with the pulse energy of 13.6 nJ.     

Diode-pumped Nd:LuVO<Subscript>4</Subscript>-Nd:YVO<Subscript>4</Subscript> laser at 492 nm with intracavity sum-frequency-mixing in LiB<Subscript>3</Subscript>O<Subscript>6</Subscript>

We present for the first time a Nd:YVO₄ laser emitting at 1064 nm intracavity pumped by a 916 nm diode-pumped Nd:LuVO₄ laser. A 809 nm laser diode is used to pump the Nd:LuVO₄ crystal emitting at 916 nm, a Nd:YVO₄ laser crystal was pumped at 916 nm and lased at 1064 nm. Intracavity sum-frequency mixing at 916 and 1064 nm was then realized in a LiB₃O₆ (LBO) crystal to reach the blue range. We obtained a continuous-wave output power of 216 mW at 492 nm under 19.6 W of incident pump power at 809 nm.     

High efficiency passive mode-locked Nd:YVO<Subscript>4</Subscript> laser based on SESAM under direct pumping at 880 nm

We report on an 880 nm LD pumped passive mode-locked TEM₀₀ Nd:YVO₄ laser based on a semiconductor saturable absorber mirror (SESAM), with a high optical-to-optical conversion efficiency of 67.3%, and a slope efficiency of 71%. When the absorbed pump power was 11 W, 7.4 W average output power of 1064 nm continuous-wave mode-locked laser was achieved. To our knowledge, this is the highest optical-to-optical conversion efficiency among all the published reports of 880 nm LD pumped SESAM passive mode-locked lasers. The repetition rate of mode-locked pulse was 80 MHz with 26 ps pulse width. The maximum pulse energy and peak power were 92.5 nJ and 3.6 kW, respectively.     

Passively Q-Switched and mode-locked Nd:YVO<Subscript>4</Subscript> laser with sandwich structured wallpaper graphene oxide absorber

We report on a passively Q-switched and mode-locked Nd:YVO₄ laser using a novel low-cost wall-paper graphene oxide absorber. Sandwich structured wallpaper graphene oxide absorber was constructed by a high transmission mirror, a piece of wallpaper graphene oxide absorber and a reflective mirror. The average output power of 310 mW of passively Q-switched and mode-locked laser was successfully achieved. The repetition rate and pulse width of the Q-switched envelope were 213 kHz and 770 ns, respectively. The repetition rate of passively mode-locked pulse within the Q-switched envelope was 81.3 MHz with the pulse energy of 3.8 nJ.     

LD end-pumped passively mode-locked Nd:YVO<Subscript>4</Subscript> laser with single-walled carbon nanotubes

We demonstrate a LD end-pumped passively mode-locked Nd:YVO₄ laser using a single-walled carbon nanotubes saturable absorber (SWCNT-SA). The SWCNT wafer was fabricated by electric arc discharge method on quartz substrate with absorption wavelength of 1064 nm. At the absorbed pump of 15.8 W, an output power of 750 mW CW (continuous wave) mode-locked laser pulse was achieved with the repetition of 79.7 MHz, corresponding to optical-optical efficiency of 4.75%.     

880 nm LD pumped passive Q-switched and mode-locked Nd:YVO<Subscript>4</Subscript> laser using a single-walled carbon nanotube saturable absorber

We report a 880 nm LD pumped passive Q-switched and mode-locked Nd:YVO₄ laser using a single-walled carbon nanotube saturable absorber (SWCNT-SA). At the pump power of 7.78 W, the average out-put power of 330 mW of Q-switched and mode-locked laser with optical conversion efficiency of 4.2% was generated. The repetition rate and pulse width of the Q-switched envelope were 33 kHz and 5.6 μs, respectively. The repetition rate and pulse energy of the mode-locked pulse within the Q-switched envelope were 80 MHz and 4.1 nJ, respectively.     

Diode-pumped passively mode-locked Nd:GdVO<Subscript>4</Subscript> laser with a GaAs saturable absorber mirror

We report on a diode end-pumped passively mode-locked Nd:GdVO₄ laser. By using a GaAs wafer simultaneously as the saturable absorber and the output coupler, stable continuous-wave mode locking was achieved. The pulse width was measured to be 18.9 picoseconds at a repetition rate of 370 MHz. The most remarkable property of the laser is that its repetition rate can be changed from 370 MHz to 3.348 GHz by simply changing the cavity length. An average output power of 3.46 W at a 3.348 GHz repetition rate was obtained with a 14 W pump power. To our knowledge, this is the first demonstration of a passively mode-locked Nd:GdVO₄ laser using a GaAs wafer as the saturable absorber. PACS 42.55.Rz; 42.60.Fc; 42.55.Xi.     

Crystal growth,spectroscopic and CW laser properties of Nd<Subscript>0.03</Subscript>Lu<Subscript>2.871</Subscript>Gd<Subscript>0.099</Subscript>Al<Subscript>5</Subscript>O<Subscript>12</Subscript> crystal

Nd_0.03Lu_2.871Gd_0.099Al₅O₁₂ (Nd:LuGdAG) crystal was grown by the Czochralski method. The absorption, fluorescence spectra and fluorescence lifetime of Nd:LuGdAG crystal at room temperature were investigated for the first time. We reported the continuous-wave (CW) Nd:LuGdAG laser operation under diode pumping. Output power of 1.43 W at 1064 nm was achieved with a slope efficiency of 34.1%. All the results show that Nd:LuGdAG crystal is a promising laser material.     

Performance comparisons of passively Q-switched intracavity-frequency-doubled Nd:Gd<Subscript>0.19</Subscript>Y<Subscript>0.81</Subscript>VO<Subscript>4</Subscript> and Nd:Gd<Subscript>0.83</Subscript>Y<Subscript>0.17</Subscript>VO<Subscript>4</Subscript> lasers at 671 nm

Performance comparisons of laser-diode pumped passively Q-switched intracavity-frequency-doubled Nd:Gd_0.19Y_0.81VO₄ and Nd:Gd_0.83Y_0.17VO₄ lasers at 671 nm are demonstrated for the first time to our knowledge. KTP crystal is used as the frequency doubling material and V:YAG crystal as the saturable absorber with initial transmission of 89%. The dependences of average output power, pulse width, pulse repetition rate, single-pulse energy and peak power on incident pump power are measured and contrasted. The experimental results show that, Nd:Gd_0.83Y_0.17VO₄ laser has more excellent properties than Nd:Gd_0.19Y_0.81VO₄ laser at 671 nm.     

Compact diode-directly-pumped passively mode-locked TEM<Subscript>00</Subscript> Nd:GdVO<Subscript>4</Subscript> laser at 1341 nm using a semiconductor saturable absorber mirror

We report on a compact 880-nm diode-directly-pumped passively mode-locked TEM₀₀ Nd:GdVO₄ laser at 1341 nm with a semiconductor saturable absorber mirror (SESAM) for the first time. Under the absorbed pump power of 14.6 W, the maximum output power of 1.27 W was obtained at the repetition rate of 85.3 MHz with the pulse width of 45.3 ps, corresponding to an optical-optical efficiency of 8.8% and the slope efficiency of 33.3%, respectively. The beam quality factor was measured to be M ² = 1.18, indicating a TEM₀₀ mode.