Electron microscopic study of austenite microtwins and their influence on the crystallographic features of the pearlitic transformation

The crystallographic relationship between the structural components in high-carbon 120G4 steel after a partial isothermal pearlitic transformation has been studied by TEM. It has been found that a high density of microtwins and stacking faults was observed in the retained austenite. A new type of crystallographic relationship has been detected—parallelism of close-packed directions and planes of the structural components of fine-plate pearlite to one of the variants of twinned austenite.     

Faceting and commensurability in crystal structures of colloidal thin films

This Letter investigates the influence of finite size effects on the particle arrangement of thin film colloidal crystals. A rich variety of crystallographic faceting with large single domain microcrystallites is shown. Optical reflectance experiments together with scanning electron microscopy permit the identification of the crystal symmetry and the facet orientation, as well as the exact number of monolayers. When the cell thickness is not commensurable with a high symmetry layering, particles arrange themselves in a periodic distribution of (111)- and (100)-orientated face centered cubic (fcc) microcrystallites separated by planar defects. These structures can be described as a fcc ordering orientated along a vicinal surface, modified by a periodic distribution of fcc (111) stacking faults.     

Complex and superlattice stacking faults in D019 Co3W

Planar defects present in annealed D0₁₉?Co₃W crystals have been investigated by conventional transmission electron microscopy. Although a predominance of superlattice stacking faults was observed, five antiphase boundaries and four complex stacking faults were identified. All planar defects were observed in locked configurations or ended at grain boundaries. A comparison of relative defect energies has been carried out with a geometrical model based on pairwise interaction energies. The results suggest that the relative number of defects is not directly related to their expected energy, but rather has origin in locked configurations adopted during crystal growth and annealing.     

High-pressure torsion applied to nickel single crystals

Nickel single crystals with different crystallographic orientations were deformed by high-pressure torsion. Special attention is devoted to examining the evolution of the micro-texture and microstructure. The initial crystal orientation was found to have a significant effect on the mechanical hardening and evolution of micro-texture at low and medium equivalent strains, whereas at very high strains no effect of the initial orientation was observed and the behaviour was very similar to a polycrystal. The evolution of micro-texture is in good qualitative agreement with the full constrained Taylor model. At very high equivalent strains the initial crystal orientation has no influence on micro-texture. At such strains, the hardening, the refinement of the structure and the texture reaches a saturation. The final micro-texture is explained by the change from one preferred crystallographic orientation to another.     

"Magic" heteroepitaxial growth on vicinal surfaces

The step period (Lambda) of vicinal surfaces can be used as a new parameter for the control of metallic heteroepitaxial growth. This is evidenced here in the case of Ag/Cu(211). The deposition of 1 monolayer (ML) exhibits a c(2 x 10) superstructure leading to the formation of [111] steps in the Ag adlayer in contrast with the original [100] steps for the Cu substrate. This wetting layer can be viewed as a (133) Ag plane and it will be the starting point for the epitaxial growth. The deposition of 4 ML shows that the thin Ag film results homogeneous and no twins or stacking faults are detected. Moreover, the film grows along the [133] axis which is the orientation that minimizes the misfit between Cu(211) and the Ag film. Thus, the use of a regular stepped substrate allows one to select the crystallographic orientation of the growth and seems to be a way to avoid the creation of stacking faults.     

层错四面体对单晶铜层裂行为影响的分子动力学研究

层错四面体是一种典型的三维空位型缺陷,广泛存在于受辐照后的面心立方金属材料中,对材料的力学性能有显著的影响.目前,关于层错四面体对辐照材料层裂行为的影响还缺乏深入系统的研究.本文使用分子动力学方法模拟了含有层错四面体的单晶铜在不同冲击速度下的层裂行为,对整个冲击过程中的自由表面速度及微结构演化等进行了深入的分析.研究发现,层错四面体在冲击波作用下会发生坍塌,并进一步诱导材料产生位错、层错等缺陷.在中低速度加载下,层错四面体坍塌引起的缺陷快速向周围扩展,为孔洞提供了更宽的形核区域,促进了孔洞的异质成核,造成材料层裂强度大幅度减小.当冲击速度较高时,层错四面体坍塌导致的局部缺陷对材料的层裂强度不再有明显影响.     

孔洞和空位对单晶铝力学性能影响的分子动力学研究

采用分子动力学方法模拟含孔洞的单晶铝单轴拉伸过程,研究晶向、孔洞体积分数、空位体积分数等对孔洞生长的影响.结果表明：对于不同的晶向,决定孔洞生长变形的微观机制不同.[010]晶向单轴拉伸情况下,形变机制主要是｛111｝面位错引起的堆垛层错;[111]晶向单轴拉伸情况下,形变机制主要是位错的移动、堆积与发射.此外,孔洞及空位的体积分数对[010]、[111]晶向的孔洞生长过程也有着明显的影响.总的来说,随着孔洞或者空位体积分数的增加,材料的杨氏模量变小,屈服强度、屈服应变下降.     

Contrast analysis of Shockley partial dislocations in 4H-SiC observed by synchrotron Berg–Barrett X-ray topography

Shockley partial dislocations in 4H-SiC were observed using monochromatic synchrotron X-ray topography with a grazing-incidence Bragg-case geometry, that is, Berg–Barrett topography. The contrast of partial dislocations at the edges of Shockley-type stacking faults is discussed in terms of whether they have C- or Si-core edge components, or screw components. The dissociated state of basal-plane dislocation is discussed on a basis of the stacking sequence for basal-planes in the 4H-SiC crystal structure. It is expected that the results obtained in this study will be useful for characterizing Shockley-type stacking faults in Berg–Barrett topography.     

Crystallographic nature of deformation bands shown in Zn and Mg-based long-period stacking ordered (LPSO) phase

Formation of curious deformation bands has been reported as one of the deformation mechanisms occurring in an Mg-based long-period stacking ordered (LPSO) phase. The origin of the deformation band is still unknown, and the possibility of the deformation kink band and/or the deformation twin has been discussed. To clarify this, the crystallographic nature of deformation bands formed in the LPSO phase was examined by scanning electron microscope–electron backscatter diffraction (SEM-EBSD) pattern analysis. The results were compared to those of the deformation kink bands formed in hcp-Zn and deformation twins formed in hcp-Mg polycrystals. The deformation bands in the LPSO phase was confirmed not to exhibit a fixed crystal orientation relationship with respect to the matrix, different from the case shown in the deformation twin. Instead, the deformation band in the LPSO phase showed three arbitrariness on its crystallographic nature: an ambiguous crystal rotation axis that varied on the [0 0 0 1] zone axis from band to band; an arbitral crystal rotation angle that was not fixed and showed relatively wide distributions; and a variation in crystal rotation angle depending on the position even within a deformation band boundary itself. These features were coincident with those observed in the deformation bands formed in Zn polycrystals, suggesting that the formed deformation bands in LPSO phase crystals are predominantly deformation kink bands.     

Polarized emission of doped ZnS crystals

Polarization of light emitted in various spectral ranges was studied in two single crystals ZnS:Cu, Cl and ZnS:Ag, Cu, Al. The G-Cu, B-Cu and a small amount of S-A centers have been identified in the ZnS:Cu, Cl crystal by the spectral and polarization methods. The B-Ag band was found in the spectrum of the ZnS:Ag, Cu, Al crystal and its polarization properties investigated. This emission appears to be always polarized perpendicular to the [111]_c axis of the stacking faults independently of the polarization of the exciting light. The symmetry of the B-Ag center is not lower than that of the host lattice. Analogy with G-Cu centers suggests a model for the B-Ag center in which the polarization comes from the symmetry properties of the Ag²⁺ orbitals in the trigonal field of stacking faults.     

Orientation effects accompanying the propagation of ultrarelativistic electrons through crystals

The results obtained by experimentally investigating the dynamics of the propagation of 1.2-GeV electrons through a thin silicon single crystal are discussed. The orientation dependences of electron scattering into a small solid angle, which are measured at various scattering angles, under conditions where the effects of crystallographic axes and planes manifest themselves are interpreted. It is shown that there are such electron-scattering directions for which the orientation “independence” of the scattering intensity with respect to a specific crystallographic plane is observed and that there also exists a crystal-axis orientation for which the region of a uniform angular distribution of the intensity is observed.     

New source of stacking faults in heteroepitaxial systems

A new stacking fault formation mechanism has been observed for the first time in ZnO/LiTaO(3) heteroepitaxial films. High resolution electron microscopy studies combined with electron diffraction and numerical image computation suggest that the observed type I1 intrinsic stacking faults in an epitaxial film can be dominantly formed as a result of tilting of the lattices between films and substrate required to maintain a particular orientation relationship.     

GaN晶体中堆垛层错的高分辨电子显微像研究

借助高分辨电子显微像结合解卷处理的方法研究了GaN晶体中的堆垛层错.简要介绍了高分辨电子显微像的解卷处理原理，指出通过解卷处理可以把本来不直接反映待测晶体结构的高分辨电子显微像转换为直接反映晶体结构的图像.用高分辨电子显微像观察了GaN晶体中的堆垛层错，对高分辨电子显微像作了解卷处理.在解卷像上清晰可见缺陷核心的原子排列情况，据此确定了层错的类型.此外，还讨论了解卷处理在研究晶体缺陷中的效用. 关键词： GaN 晶体缺陷 高分辨电子显微学 解卷处理     

The Monte-Carlo simulation of random stacking faults in close-packed structures

A new approach to the random stacking faults concentration estimation in close-packed structures (the multilayer as well) is presented. It is based on the Monte-Carlo computer simulation of stacking faults arrangement in the crystal being given by an appropriate h-k sequence.     

ZnS单晶生长层线区结构的X射线衍射分析

汽相生长的ZnS·Cu单晶交流电致发光线的疏密与生长层线的疏密相对应。用X射线周转晶体法对1050℃汽相生长的ZnS晶体结构进行了分析。结果表明,生长层线疏密不同,结构差别很大,层线区的结构特点是层错的无规分布。ZnS·Cu单晶交流电致发光线的产生与结构中层错的无规分布有关。     

Determination of crystallographic orientation of large grain metals with surface acoustic waves

A previously described laser ultrasonic technique known as spatially resolved acoustic spectroscopy (SRAS) can be used to image surface microstructure, using the local surface acoustic wave (SAW) velocity as a contrast mechanism. It is shown here that measuring the SAW velocity in multiple directions can be used to determine the crystallographic orientation of grains. The orientations are determined by fitting experimentally measured velocities to theoretical velocities. Using this technique the orientations of 12 nickel and 3 aluminum single crystal samples have been measured, and these are compared with x-ray Laue backreflection (LBR) measurements with good agreement. The root mean square difference between SRAS and LBR measurements in terms of an R-value is less than 4.1°. The influence of systematic errors in the SAW velocity determination due to instrument miscalibration, which affects the accurate determination of the planes, is discussed. SRAS has great potential for complementary measurements or even for replacing established orientation determination and imaging techniques.     

Crystal nucleation in the hard sphere system

The structure and growth of crystal nuclei that spontaneously form during computer simulations of the simplest nontrivial model of a liquid, the hard sphere system, is described in this work. Compact crystal nuclei are observed to form at densities within the coexistence region of the phase diagram. The nuclei possess a range of morphologies with a predominance of multiply twinned particles possessing in some cases a significant decahedral character. However the multiply twinned particles do not form from an initial decahedral core but appear to nucleate as blocks of a face-centered cubic crystal partially bounded by stacking faults.     

A systematic investigation of stacking faults in magnesium via first-principles calculation

The stacking faults of crystal magnesium have been studied systematically by means of first-principles calculation within the generalized gradient approximation (GGA). The generalized stacking fault (GSF) energy surfaces for four kinds of basal stacking faults as well as other non-basal stacking faults in the prismatic and pyramidal planes have been gained using a supercell approach with the supercell tilling technique. The most likely slip directions for the formation of these stacking faults in the corresponding slip plane were determined, and the generalized stacking fault energy curves along the most likely slip directions were derived, then the stable and unstable stacking energies were obtained and discussed. The present results are helpful for further investigation of dislocations and the correlative mechanical properties.