Semiclassical and quantum transport in the two-dimensional electron gas in a hard-wall antidot lattice

Commensurate peaks of magnetoresistance and Shubnikov-de Haas and Aharonov-Bohm oscillations in the two-dimensional electron gas (2DEG) in a lattice of antidots with hard potential walls have been experimentally studied. The behavior of both classical magnetoresistance peaks and quantum oscillations has been shown to fundamentally depend on the lattice period and the antidot size, as well as on the smoothness of the potential at the 2DEG-antidot interface. This result indicates the necessity of revising the interpretation of all numerous experiments with antidot lattices, since this effect has been explicitly or implicitly neglected in them.     

Quantum interference and decoherence in hexagonal antidot lattices

The Altshuler–Aronov–Spivak (AAS) oscillations and the Aharonov–Bohm (AB) type oscillations both at low and high magnetic fields were observed in hexagonal antidot lattices fabricated from a GaAs/AlGaAs two-dimensional electron gas sample. The periodicities in the magnetic field and in the gate bias voltage, of the high field AB oscillation furnish information on the edge states localized around the antidots. The temperature dependences of these quantum oscillations are studied.     

Spin relaxation of two-dimensional electrons in a hall ferromagnet

Electron spin resonance in a system of two-dimensional electrons with a high electron mobility has been investigated and the position, width, intensity, and line shape of the resonance microwave absorption have been studied as functions of the filling factor and temperature. It has been shown that the ESR linewidth in high-electron-mobility GaAs/AlGaAs quantum wells may reach 30 MHz, which corresponds to a spin relaxation time of the two-dimensional electrons of 10 ns. The experimental data on the linewidth of the spin resonance at a filling factor of 1 are compared with the theoretical results for various spin relaxation mechanisms. It has been shown that the dominant mechanism of spin relaxation at a filling factor of 1 and a temperature of 1.5–4 K is the mutual scattering of spin excitons.     

Microwave-Induced Magneto-Intersubband Scattering in a Square Lattice of Antidots

JETP Letters - The effect of microwave radiation on low-temperature electron magnetotransport in a square antidot lattice with a period of d ≈ 0.8 µm based on a GaAs quantum well with...     

Strong correlation of electronic and lattice excitations in GaAs/AlGaAs semiconductor quantum wells revealed by two-dimensional terahertz spectroscopy

Coulomb-mediated interactions between intersubband excitations of electrons in GaAs/AlGaAs double quantum wells and longitudinal optical phonons are studied by two-dimensional spectroscopy in the terahertz frequency range. The multitude of diagonal and off-diagonal peaks in the 2D spectrum gives evidence of strong polaronic signatures in the nonlinear response. A quantitative theoretical analysis reveals a dipole coupling of electrons to the polar lattice that is much stronger than in bulk GaAs, due to a dynamic localization of the electron wave function by scattering processes.     

Oscillations of the magnetoresistance of a two-dimensional electron gas in a GaAs quantum well with AlAs/GaAs superlattice barriers in a microwave field

The effect of microwave radiation in the frequency range from 1.2 to 10 GHz on the magnetoresistance of a high-mobility two-dimensional electron gas has been studied in a GaAs quantum well with AlAs/GaAs superlattice barriers. It has been found that the microwave field induces oscillations of this magnetoresistance, which are periodic in the reciprocal magnetic field (1/B). It has been shown that the period of these oscillations in the frequency range under study depends on the microwave radiation power.     

Magnetoresistance oscillations due to Zener tunneling and microwave radiation in a 2D electron gas in GaAs quantum well with AlAs/GaAs superlattices barriers

The effect of microwave radiation in the frequency range from 1.2 to 10 GHz on the magnetoresistance of a high-mobility two-dimensional electron gas has been studied in a GaAs quantum well with AlAs/GaAs superlattice barriers. It has been found that the microwave field induces magnetoresistance oscillations periodic in the reciprocal magnetic field (1/B). It has been shown that the period of these oscillations in the covered frequency range depends on the microwave radiation power.     

Transport relaxation time and quantum lifetime in selectively doped GaAs/AlAs heterostructures

Low-temperature dependences of the transport relaxation time (τ_tr) and quantum lifetime (τ_q) on the density of the two-dimensional electron gas (n _e ) in GaAs quantum wells with AlAs/GaAs lateral superlattice barriers have been studied. An exponential increase in the quantum lifetime with increasing electron density has been observed. It has been shown that the sharp increase in the quantum lifetime correlates with the appearance of X electrons in the AlAs/GaAs lateral superlattice barriers. It has been established that the ratio of the transport relaxation time to the quantum lifetime in the studied structures nonmonotonically depends on the density: the ratio τ_tr/τ_q first increases linearly with n _e and then decreases. This behavior is not described by the existing theories.     

Quantum Hall effect in a system with an electron reservoir

Precise measurements of the magnetic-field and gate-voltage dependences of the capacitance of a field-effect transistor with an electron system in a wide GaAs quantum well have been carried out. It has been found that the capacitance minima caused by the gaps in the Landau spectrum of the electron system become anomalously wide when two size-quantization subbands are occupied. The effect is explained by retention of the chemical potential in the gap between the Landau levels of one of the subbands owing to redistribution of electrons between the subbands under a change in the magnetic field. The calculation taking into account this redistribution has been performed in a model of the electron system formed by two two-dimensional electron layers. The calculation results describe both the wide capacitance features and the observed disappearance of certain quantum Hall effect states.     

甚长波量子阱红外探测器光栅耦合的研究

采用平面波展开的散射矩阵方法研究n型甚长波量子阱红外探测器的二维衍射光栅，并同时从实验方面研究了其红外透射光谱.研究表明，n型量子阱器件的光栅耦合是传输场和倏逝场共同作用的结果.对于n型量子阱红外探测器的光栅耦合，光栅周期、光栅深度和占空比三者之间相互影响；要达到好的光学耦合效果，需要根据量子阱器件的峰值探测波长选择合适的光栅参数. 关键词： n型量子阱红外探测器 二维光栅 光耦合     

Pair scattering of electrons in edge channels of opposite chiralities in the presence of a disorder potential

The nonequilibrium transfer of the energy between electrons of counter-propagating quasi-one-dimensional systems has been perturbatively calculated for edge channels in a two-dimensional system in the integer quantum Hall effect. The processes involving two electrons that are allowed only in the system with disorder have been taken into account. Expressions for the cases of Coulomb scattering and transfer of nonequilibrium phonons have been obtained. The energy transferred per unit time has a quasi-threshold dependence on the degree of nonequilibrium of the hot channel. According to numerical estimates for electrons in GaAs, Coulomb scattering processes dominate in the energy transfer and the expected effect can be experimentally observed.     

Stability of charged impurities in a coupled single electron transistor and antidot system

We have fabricated devices on GaAs/AlGaAs heterostructures, containing two-dimensional electron gases, that consist of three point contacts surrounding an etched antidot with an Al/AlO_x/Al single electron transistor. The single electron transistor measurement shows rearrangement of neighboring charged impurities with a characteristic stability time scale of 20 s in one device and greater than 1 h in a second device. We also measured the resistance of the point contact–antidot constriction versus magnetic field. In a device with a 20 s stability time, we see a high noise level and poor reproducibility. In a device with a long stability time, much greater than 1 h, we are able to see reproducible features including Aharonov–Bohm oscillations.     

Optically induced current oscillation in a modulation-doped field-effect transistor embedded with InAs quantum dots

The output characteristics of a modulation-doped GaAs/AlGaAs field-effect transistor with InAs quantum dots (QDs) embedded in the barrier layer (QDFET) have been studied at low temperature. Optically induced current oscillation in the output current–voltage (I–V) curves has been found under the near-infrared light illumination. It is ascribed to the recombination of real space transferred electrons and photoexcited holes captured by the QDs. Furthermore, InAs QDs layer can also capture electrons and act as a nano-floating gate, which causes a bistability in the two-dimensional electron gas (2DEG) conductance. Our results suggest that the QDFET is a promising candidate for developing phototransistor or logic circuits.     

Kondo effect in a quantum antidot

We report Kondo-like behavior in a quantum antidot (a submicron depleted region in a two-dimensional electron gas) in the quantum-Hall regime. When both spins of the lowest Landau level are present all around the antidot, the resonances between extended edge states via antidot bound states show an abnormal feature in alternate Coulomb-blockaded regions. The feature becomes suppressed when the temperature or source-drain bias is raised as for Kondo resonances in quantum dots. Although the exact mechanism is unknown, Kondo-like correlated tunneling may arise from a Skyrmion-type edge reconstruction. This observation demonstrates the generality of the Kondo phenomenon.     

Conductivity of a two-dimensional curved microconstriction

The quantum conductance of a long two-dimensional curved microconstriction has been considered theoretically. It is shown that over-the-barrier-reflection of electrons at points in which the curvature of the surface is changed, results in fine structure of quantum steps of the conductance. The observation of this structure would be a demonstration of the influence of the curvature on the quantum properties of two-dimensional electrons.     

Spacing and width of Coulomb blockade peaks in a silicon quantum dot

We present an experimental study of the fluctuations of Coulomb blockade peak positions of a quantum dot. The dot is defined by patterning the two-dimensional electron gas of a silicon MOSFET structure using stacked gates. The ratio of charging energy to single-particle energy is considerably larger than in comparable GaAs/AlGaAs quantum dots. The statistical distribution of the conductance peak spacings in the Coulomb blockade regime was found to be unimodal and does not follow the Wigner surmise. The fluctuations of the spacings are much larger than the typical single-particle level spacing and thus clearly contradict the expectation of random matrix theory. Measurements of the natural line width of a set of several adjacent conductance peaks suggest that all of the peaks in the set are dominated by electrons being transported through a single-broad energy level.     

Electron interactions in an antidot in the integer quantum Hall regime

A quantum antidot, a submicron depletion region in a two-dimensional electron system, has been actively studied in the past two decades, providing a powerful tool for understanding quantum Hall systems. In a perpendicular magnetic field, electrons form bound states around the antidot. Aharonov–Bohm resonances through such bound states have been experimentally studied, showing interesting phenomena such as Coulomb charging, h/2e$h/2e$ oscillations, spectator modes, signatures of electron interactions in the line shape, Kondo effect, etc. None of them can be explained by a simple noninteracting electron approach. Theoretical models for the above observations have been developed recently, such as a capacitive-interaction model for explaining the h/2e$h/2e$ oscillations and the Kondo effect, numerical prediction of a hole maximum-density-droplet antidot ground state, and spin-density-functional theory for investigating the compressibility of antidot edges. In this review, we summarize such experimental and theoretical works on electron interactions in antidots.     

锯齿形石墨烯反点网络加工与输运性质研究

具有特定边界的石墨烯纳米结构在纳电子学、自旋电子学等研究领域表现出良好的应用前景.然而石墨烯加工成纳米结构时,无序的边界不可避免地会降低其载流子迁移率.氢等离子体各向异性刻蚀技术是加工具备完美边界石墨烯微纳结构的一项关键技术,刻蚀后的石墨烯呈现出规则的近原子级平整的锯齿形边界.本文研究了氮化硼上锯齿形边界石墨烯反点网络的磁输运性质,低磁场下可以观测到载流子围绕着一个空位缺陷运动时的公度振荡磁阻峰.随着磁场的增大,朗道能级简并度逐渐增大,载流子的磁输运行为从Shubnikov-de Haas振荡逐渐向量子霍尔效应转变.在零磁场附近可以观测到反点网络周期性空位缺陷的边界散射所导致的弱局域效应.研究结果表明,在氮化硼衬底上利用氢等离子体刻蚀技术加工锯齿形边界石墨烯反点网络,其样品质量会明显提高,这种简单易行的方法为后续高质量石墨烯反点网络的输运研究提供了新思路.     

Interface <Emphasis Type="Italic">D</Emphasis><Superscript>−</Superscript> complexes in a two-dimensional electron system

The excitation spectrum of a two-dimensional electron system in high-quality AlGaAs/GaAs quantum wells has been studied by Raman scattering. New Raman lines due to the excitation of interface D ⁻ complexes in which two electrons localized in a quantum well are coupled to a charged impurity at the quantum well interface have been identified. The ground state of the interface D ⁻ complexes has been found to change in the transverse magnetic field from spin-singlet to spin-triplet, similar to a change in the ground state of the system of two electrons localized in a harmonic potential.     

Shell structure of a circular quantum dot in weak magnetic fields

The conductance of a circular quantum dot in a two-dimensional electron gas of a GaAlAs/GaAs heterostructure has been measured. Conductance oscillations as functions both of the magnetic field B and of the size of a dot confining about 1000 electrons are related to the formation of electronic shell structure. Modeling the dot by a circular billiard, we interpret the results semiclassically in terms of periodic orbit theory, providing a simple explanation of the B-periodic oscillations. A comparison to a harmonic confinement suitable for smaller quantum dots is given.