Fundamental band edge optical absorption in Bi<Subscript>0.5</Subscript>Sb<Subscript>1.5</Subscript>Te<Subscript>3</Subscript>

Spectra of optical absorption in Bi_0.5Sb_1.5Te₃ films grown on mica and KBr substrates have been investigated for T = 145 and 300 K. The data obtained have been analyzed together with the data of investigations on the fundamental absorption edge for Bi₂Te₃ available in the scientific literature. It has been revealed that the interband absorption spectra for both Bi_0.5Sb_1.5Te₃ and Bi₂Te₃ represent a superposition of two components corresponding to direct and indirect allowed optical transitions. In this case, the least energy gap separating the valence band and the conduction band is direct for Bi_2−xSb_xTe₃ (x ≤ 1.5, T = 300 K). For Bi_0.5Sb_1.5Te₃ the temperature variation rates have been estimated for the thresholds of direct and indirect interband transitions. It has been shown that this solid solution is direct gap solution at T ≥ 145 K. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 50–52, July, 2008.     

Effect of heat treatment on the structure and the thermoelectric properties of Sb<Subscript>0.9</Subscript>Bi<Subscript>1.1</Subscript>Te<Subscript>2.9</Subscript>Se<Subscript>0.1</Subscript> thin films and composites based on them

This work considers the effect of vacuum annealing on the thermoelectric properties of Sb_0.9Bi_1.1Te_2.9Se_0.1 thin film and Sb_0.9Bi_1.1Te_2.9Se_0.1–C composites with various carbon contents produced by ion-beam deposition in an argon atmosphere. The electrical resistivity and the thermopower of Sb_0.9Bi_1.1Te_2.9Se_0.1–C nanocomposites are found to be dependent on not only the carbon concentration but also the type and the concentration of intrinsic point defects of the Sb_0.9Bi_1.1Te_2.9Se_0.1 solid solution, which determine the type of conductivity of Sb_0.9Bi_1.1Te_2.9Se_0.1 granules. The power factors are estimated for films of Sb_0.9Bi_1.1Te_2.9Se_0.1 solid solution and films of Sb_0.9Bi_1.1Te_2.9Se_0.1–C composites and found to have values comparable with the values for nanostructured materials on the basis of (Bi,Sb)₂(Te,Se)₃ solid solutions.     

Effect of thermal treatment on the thermoelectric properties of Sb<Subscript>0.9</Subscript>Bi<Subscript>1.1</Subscript>Te<Subscript>2.9</Subscript>Se<Subscript>0.1</Subscript> solid solution thin films

The effect thermal treatment in a vacuum has on the thermoelectric properties of Sb_0.9Bi_1.1Te_2.9Se_0.1 solid solution thin films obtained via ion-beam sputtering in an argon atmosphere is considered. It is established that the specific resistance and thermopower are determined by the type and concentration of intrinsic point defects of the Sb_0.9Bi_1.1Te_2.9Se_0.1 solid solution. The power factor values are found to be comparable to those of nanostructured materials based on (Bi,Sb)₂(Te,Se)₃ solid solutions.     

Electrophysical parameters of <Emphasis Type="Italic">c</Emphasis>-oriented Bi<Subscript>2</Subscript>Te<Subscript>3</Subscript> films with a low concentration of antistructural defects

Epitaxial c-oriented Bi₂Te₃ films 1.2 μm in thickness are grown by the hot wall method for a low supersaturation of the vapor phase over the surface of mica substrates. The hexagonal unit cell parameters a = 4.386 Å and c = 30.452 Å of the grown films almost coincide with the corresponding parameters of stoichiometric bulk Bi₂Te₃ crystals. At T = 100 K, the Hall concentration of electrons in the films is on the order of 8 × 10¹⁸ cm^?3, while the highest values of the thermoelectric coefficient (α ≈ 280 μV K^?1) are observed at temperatures on the order of 260 K. Under impurity conduction conditions, conductivity σ of the films increases upon cooling in inverse proportion to the squared temperature. In the temperature range 100–200 K, thermoelectric power parameter α²σ of Bi₂Te₃ films has values of 80–90 μW cm^?1 K^?2.     

Stratification of Bi<Subscript>0.5</Subscript>Sb<Subscript>1.5</Subscript>Te<Subscript>3</Subscript> Single Crystals and Sintering of the Obtained Micro- and Nanoscale Plates

The use of surface active liquids facilitates intense stratification of mechanically strained Bi_0.5Sb_1.5Te₃ crystallites. A Bi_0.5Sb_1.5Te₃ heat element with specified thickness and structure is formed by layer-by-layer deposition of “thermoelectric ink” on its free surface. A heat treatment of the formed thermoelectric element in argon at a temperature of 800 K makes it possible to minimize radically the resistance of the grain boundaries introduced into its bulk.     

Anomalous increase of the thermopower and thermoelectric figure of merit in Ga-doped <Emphasis Type="Italic">p</Emphasis>-(Bi<Subscript>0.5</Subscript>Sb<Subscript>0.5</Subscript>)<Subscript>2</Subscript>Te<Subscript>3</Subscript> single crystals

The effect of Ga doping on the temperature dependences (5 K ≤ T ≤ 300 K) of the Seebeck coefficient α, electrical conductivity σ, thermal conductivity coefficient κ, and thermoelectric figure of merit Z of p-(Bi_0.5Sb_0.5)₂Te₃ single crystals has been investigated. It has been shown that, upon Ga doping, the hole concentration decreases, the Seebeck coefficient increases, the electrical conductivity decreases, and the thermoelectric figure of merit increases. The observed variations in the Seebeck coefficient cannot be completely explained by the decrease in the hole concentration and indicate a noticeable variation in the density of states due to the Ga doping.     

Structural and thermoelectric properties in (Sb<Subscript>1-x</Subscript>Bi<Subscript>x</Subscript>)<Subscript>2</Subscript>Te<Subscript>3</Subscript> thin films

We have investigated the structural and thermoelectric properties of (Sb_1-xBi_x)₂Te₃ thin films on CdTe(111)B. Analysis of X-ray diffraction patterns (–2 scans and rocking curves) of the films shows that they are of high quality and that they are well aligned with their (00.1) axis normal to the substrates. Measurements of the temperature-dependent thermoelectric power, resistivity, and Hall coefficient of the films were performed with respect to the binary composition, x. For the samples in the range 0.2<x<0.3, the room-temperature thermopower values were in the range 159–184 V/K, the room-temperature carrier concentrations were 3.93–5.13×10¹⁹ cm^-3, and the room-temperature mobilities were 24.6–64.0 cm²V^-1s^-1. PACS 72.20.Pa; 72.80.Jc; 73.6l.Le     

Features of the electron density distribution in antimony telluride Sb<Subscript>2</Subscript>Te<Subscript>3</Subscript>

Based on the results of electron density functional calculations of the electronic band structure of semiconductors Sb₂Te₃, Ge, Te, and semimetal Sb, the parameters of critical points in the electron density distribution (maxima, minima, and saddle points) in the lattices of the above materials are found. The data obtained are used to analyze the chemical bond nature in Sb₂Te₃.     

Impact of Ultrathin Pb Films on the Topological Surface and Quantum-Well States of Bi<Subscript>2</Subscript>Se<Subscript>3</Subscript> and Sb<Subscript>2</Subscript>Te<Subscript>3</Subscript> Topological Insulators

The effect of an ultrathin Pb film deposited on the surface of Bi₂Se₃ and Sb₂Te₃ compounds on the electronic state structure of topological insulators is studied experimentally by the angle-resolved photoemission spectroscopy (ARPES) technique. The following features are revealed: formation of two-dimensional quantum-well states in the near-surface region, an increase in the binding energy of the Dirac cone and the core levels, and a simultaneous electronic states intensity redistribution in the system in photoemission spectra. The results obtained show that topological states may coexist at the interface between studied materials and a superconductor, which seems to be promising for application in quantum computers.     

Preferential growth of Bi<Subscript>2</Subscript>Te<Subscript>3</Subscript> films with a nanolayer structure: enhancement of thermoelectric properties induced by nanocrystal boundaries

Preferential growth of different crystal planes in layered Bi₂Te₃ thin films with each layer <40 nm has been achieved by a simple magnetron co-sputtering method. The preferential growth of (015) plane or (001) was achieved at special depositing conditions due to the more sufficient growth along the in-plane direction induced by the enhanced diffusion of atoms and lower deposition rate. The Bi₂Te₃ film with preferential growth of (001) plane possesses about two times higher electrical conductivity and Seebeck coefficient as compared to the film with preferential growth of (015) plane, due to the greatly enhanced carrier mobility. Furthermore, the thermal conductivity has been suppressed due to more phonon scattering at grain boundaries, compared with ordinary Bi₂Te₃ alloys and films.     

Effect of conditions of preparation on the thermoelectric properties of solid solutions of Bi<Subscript>0.5</Subscript>Sb<Subscript>1.5</Subscript>Te<Subscript>3</Subscript>

The effect the conditions of preparing thermoelectric solid solutions of Bi_0.5Sb_1.5Te₃ + 0.06 wt % Pb by hardening from the liquid state with subsequent hot pressing have on their thermoelectric properties is studied. It is found that the optimum thermoelectric quality factors are achieved at a 2200–2800 rpm rate of copper disc rotation.     

Controlled synthesis of Sb<Subscript>2</Subscript>O<Subscript>3</Subscript> nanoparticles by chemical reducing method in ethylene glycol

Antimony trioxide (Sb₂O₃) nanoparticles with particle size range from 2 to 12 nm were successfully synthesized by chemical reducing method. Antimony trichloride was reduced by hydrazine with the presence of sodium hydroxide (NaOH) as catalyst in ethylene glycol at 120 °C for 1 h. Effects of hydrazine concentration ([N₂H₅OH]/[Sb³⁺] = 0.75, 5, 10, 20, and 30, when concentration of NaOH was fixed [NaOH]/[Sb³⁺] = 3) and NaOH concentration ([NaOH]/[Sb³⁺] = 0, 1, 3, and 5, when concentration of hydrazine was fixed [N₂H₅OH]/[Sb³⁺] = 10) on the particle size and shape of the Sb₂O₃ nanoparticles were investigated. Transmission electron microscope, selected area electron diffraction pattern, and high resolution electron microscope were employed to study the morphology and crystallinity of the nanoparticles. It was observed that the particle size decreased and remained constant when [N₂H₅OH]/[Sb³⁺]) ≥ 10 and [NaOH]/[Sb³⁺] = 3. Further study on the crystallinity and phase of the nanoparticles was assisted by X-ray diffractometer (XRD). XRD revealed a cubic phase of Sb₂O₃ (ICDD file no. 00-043-1071) with preferred plane of (622) and lattice spacing of 1.68 Å. Correlation between UV–visible absorption wavelengths of the nanoparticles and their sizes was established.     

Some peculiarities of magnetoresistance and Hall resistance of Sb<Subscript>2</Subscript>Te<Subscript>3</Subscript> nanoplates

Antimony telluride (Sb₂Te₃) nanoplates of various thickness were grown by the vapor phase deposition method. The Hall resistance and magnetoresistance of the samples were measured in magnetic fields up to 9 T at temperatures from 2 to 300 K. Temperature dependence of the magnetoresistance and Hall resistance of the nanoplates shows a strong dependence on the thickness of the samples. Relatively thick samples show a nonlinear dependence of the Hall resistance on magnetic field. The measurement data are analyzed within the model of multi-channel transport. The difference in behavior is attributed to the existence of two channels of charge transfer with high and low mobility.     

Selective wet etching of Ge<Subscript>2</Subscript>Sb<Subscript>2</Subscript>Te<Subscript>5</Subscript> phase-change thin films in thermal lithography with tetramethylammonium

In this paper, we study Ge₂Sb₂Te₅ phase-change film as a promising inorganic photoresist using organic alkaline: tetramethylammonium hydroxide (TMAH) solution, instead of inorganic alkali or acid as etchant. The basic etching properties are investigated by prior and posterior annealing Ge₂Sb₂Te₅ films. Selectivity is found to be dependent on concentration of TMAH. There is a good selectivity in the 25% TMAH solution, in which the amorphous state is etched away, whereas the crystalline state remains. The etching rate decreases when the concentration of TMAH is diluted; and an opposite selectivity, compared with 25% TMAH solution, is observed in the 0.125% TMAH solution. Selective etching with laser crystallization in different power levels is also studied, and an excellent wet selectivity in the 25% TMAH solution is obtained. The remaining crystalline lines are observed by atomic force microscopy. The surface roughness after etching is at a good level. The selective wet-etching mechanism is also discussed.     

High-temperature complex impedance and modulus spectroscopic studies of doped Na<Subscript>0.5</Subscript>Bi<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript>-BaTiO<Subscript>3</Subscript> ferroelectric ceramics

Lead-free Na_0.5Bi_0.5TiO₃ (NBT) and (1 ? x)Na_0.5Bi_0.5TiO₃ + xBaTiO₃ with x = 0.1 and 0.2 (where x = 0.1 and 0.2 are named as NBT1 and NBT2, respectively), (1 ? y)Na_0.5Bi_0.5TiO₃ + yBa_0.925Nd_0.05TiO₃ with y = 0.1 and 0.2 (where y = 0.1 and 0.2 are named as NBT3 and NBT4, respectively)-based relaxor ferroelectric ceramics were prepared using the sol-gel method. The crystal structure was investigated by X-ray diffraction (XRD) at room temperature (RT). The XRD patterns confirmed the presence of the rhombohedral phase in all the samples. The electrical properties of the present NBT-based samples were investigated by complex impedance and the modulus spectroscopy technique in the temperature range of RT–600 °C. The AC conductivity was found to increase with the substitution of Ba²⁺ ions to the NBT sample whereas it significantly decreased with the addition of Nd³⁺ ions. The more anion vacancies in Ba-added samples and the lower anion vacancies in Nd-added samples were found to be responsible for higher and lower conductivities, respectively.     

Magnetic Resonance Study of the Bi<Subscript>2</Subscript>Te<Subscript>3</Subscript> Doped with Manganese

Crystals of 3D topological insulators, bismuth telluride Bi₂Te₃, doped with manganese were studied using electron spin resonance (ESR) spectroscopy together with the SQUID magnetometry, transport measurements, and X-ray characterization. The obtained ESR data, such as the temperature and the angular dependence of the resonance field, reveal the specific critical behavior and confirm the ferromagnetic ordering of Mn spins even at modest doping. In addition to the studies of the critical behavior of diluted ferromagnet Bi_2?x Mn _x Te_3, we also discuss the effects of the limited solubility of Mn ions giving rise to microscopic inclusions of the spurious magnetic phases which were revealed using ESR technique.     

On possible deep subsurface states in topological insulators: The PbBi<Subscript>4</Subscript>Te<Subscript>7</Subscript> system

Theoretical studies of the bulk and surface electronic structures of PbBi₄Te₇ are presented. The PbBi₄Te₇ compound has a layered structure of five-layer (Bi₂Te₃) and seven-layer (PbBi₂Te₄) blocks alternating along the hexagonal axis. Analysis of the spin-orbit-induced inversion of the band gap edges indicates that this compound is a three-dimensional topological insulator. The topological properties of this compound are mainly determined by the PbBi₂Te₄ blocks. The Dirac cone is formed on the PbBi₄Te₇(0001) surface near the $ \bar \Gamma $ \bar \Gamma point for any block (either Bi₂Te₃ or PbBi₂Te₄) forming the surface. It is shown that the Dirac state can be localized not only on the surface but also deeply beneath it.     

Photopyroelectric spectroscopy of Sb<Subscript>2</Subscript>O<Subscript>3</Subscript> - ZnO ceramics

Photopyroelectric spectroscopy is used to study the band-gap energy of the ceramic (ZnO + xSb₂O₃), x = 0.1 - 1.5 mol% and the ceramic (ZnO + 0.4 mol%  Bi₂O₃ + xSb₂O₃), x = 0 - 1.5 mol% sintered at isothermal temperature, 1280 °C, for 1 and 2 hours. The wavelength of incident light, modulated at 9 Hz, is kept in the visible range and the photopyroelectric spectrum with reference to doping level is discussed. The band-gap energy is reduced from 3.2 eV, for pure ZnO, to 2.86, 2.83 eV for the samples without Bi₂O₃at 0.1 mol% of Sb₂O₃ for 1 and 2 hours of sintering time, respectively. It is reduced to 2.83, 2.80 eV for the samples with Bi₂O₃ at 0 mol% of Sb₂O₃ for 1 and 2 hours of sintering time, respectively. The steepness factor σ_A which characterizes the slop of exponential optical absorption is discussed with reference to the doping level. The phase constitution is determined by XRD analysis; microstructure and compositional analysis of the selected areas are analyzed using SEM and EDX.     

Thermoelectric properties of Bi2Se3/Bi2Te3/Bi2Se3 and Sb2Te3/Bi2Te3/Sb2Te3 quantum well systems

In this work, we develop a theory of thermoelectric transport properties in two-dimensional semiconducting quantum well structures. Calculations are performed for n-type 0.1 wt.% CuBr-doped Bi₂Se₃/Bi₂Te₃/Bi₂Se₃ and p-type 3 wt.% Te-doped Sb₂Te₃/Bi₂Te₃/Sb₂Te₃ quantum well systems in the temperature range 50–600 K. It is found that reducing the well thickness has a pronounced effect on enhancing the thermoelectric figure of merit (ZT). For the n-type Bi₂Se₃/Bi₂Te₃/Bi₂Se₃ with 7 nm well width, the maximum value of ZT is estimated to be 0.97 at 350 K and for the p-type Sb₂Te₃/Bi₂Te₃/Sb₂Te₃ with well width 10 nm the highest value of the ZT is found to be 1.945 at 440 K. An explanation is provided for the resulting higher ZT value of the p-type system compared to the n-type system.     

Studies on structural and electrical properties of Mg<Subscript>0. 5+y</Subscript> (Zr<Subscript>2-y</Subscript>Fe<Subscript>y</Subscript>) <Subscript>2</Subscript> (PO<Subscript>4</Subscript>) <Subscript>3</Subscript> ceramic electrolytes

The sample of Mg_{0. 5+y} (Zr_1-y Fe_y) ₂ (PO₄) ₃ (0.0 ≤y ≤0.5) was synthesized using the sol-gel method. The structures of the samples were investigated using X-ray diffraction and Fourier transform infrared spectroscopy measurement. XRD studies showed that samples had a monoclinic structure which was iso-structured with the parent compound, Mg_0.5Zr (PO₄) ₃. The complex impedance spectroscopy was carried out in the frequency range 1–6 MHz and temperature range 303 to 773 K to study the electrical properties of the electrolytes. The substitutions of Fe³⁺ with Zr⁴⁺ in the Mg_0.5Zr (PO₄) ₃ structure was introduced as an extrainterstitial Mg²⁺ ion in the modified structured. The compound of Mg_0.5+y (Zr_1-y Fe_y)₂(PO₄)₃ with y?=?0.4 gives a maximum conductivity value of 1.25?×?10^?5 S cm^?1 at room temperature and 7.18?×?10^?5 S cm^?1 at 773 K. Charge carrier concentration, mobile ion concentration, and ion hopping rate are calculated by fitting the conductance spectra to power law variation, σ _ac (ω)?=?σ _o ? +?Aω ^α . The charge carrier concentration and mobile ion concentration increases with increase of Fe³⁺ inclusion. This implies the increase in conductivity of the compounds was due to extra interstitial Mg²⁺ ions.