Determination of cesium distributions in oxides of MOS structures by photoinjection studies

The photoinjection technique of Berglund and Powell has been used for the determination of cesium profiles in the oxide films of MOS-structures. Measurements of photocurrent as a function of the applied voltage provide information on the distribution of charges in the vicinity (10–200 Å) of both the interfaces of the insulating layer. The charge profiles to be measured were introduced into SiO₂ by ion implantation. Cesium ions, which cause positive surface charge and show great stability under temperature-bias stress, have been implanted before and after oxidation. In the first case, cesium ions were implanted into the silicon surface, which was subsequently oxidized. After oxidation, the cesium ions were found mainly at both the interfaces and only a few of them in bulk SiO₂. In the second case, cesium ions were implanted into SiO₂ at an energy of 5 keV. The cesium distribution measured by the photoinjection technique agrees within 5 Å with that predicted by implantation theory.     

Double-walled core-shell structured Si@SiO2@C nanocomposite as anode for lithium-ion batteries

Double-walled core-shell structured Si@SiO₂@C nanocomposite has been prepared by calcination of silicon nanoparticles in air and subsequent carbon coating. The obtained Si@SiO₂@C nanocomposite demonstrates a reversible specific capacity of about 786 mAh g^?1 after 100 cycles at a current density of 100 mA g^?1 with a capacity fading of 0.13 % per cycle. The enhanced electrochemical performance can be due to that the double walls of carbon and SiO₂ improve the electronic conductivity and enhance the compatibility of electrode materials and electrolyte as a result of accommodating the significant volumetric change during cycles. The interlayer SiO₂ may release the mechanical strain and enhance the interfacial adhesion between carbon shell and silicon core.     

Heat capacity of oxides in the Bi2O3-SiO2 system

The high-temperature heat capacity of Bi₄Si₃O₁₂, Bi₂SiO₅, and Bi₁₂SiO₂₀ has been investigated. It has been found that there is a correlation between the specific heat C _p ⁰ (298 K) and the composition of oxides in the Bi₂O₃-SiO₂ system.     

Surface plasmon resonance and surface-enhanced Raman scattering activity of SiO2–Au core-cap nanostructure arrays

SiO₂–Au core-cap nanostructure arrays were prepared by dip-coating technique combined with wet chemical reduction method. The surface morphologies, structures, and optical properties of the obtained samples were characterized by scanning electron microscopy, X-ray diffraction, and ultraviolet–visible spectrophotometer, respectively. The surface-enhanced Raman scattering (SERS) activity of SiO₂–Au core-cap nanostructure arrays substrates was investigated using leucine as probe molecule. And the relationship between the SERS effect and the surface plasmon resonance (SPR) peaks was discussed. High-quality, stable, and reproducible SERS spectra of leucine were successfully obtained. When the maximum SPR peak matched with the excitation wavelength, the substrate gave rise to the highest SERS enhancement. Furthermore, six different fluorescent dyes were also chosen as probe molecules. It was found that the substrate showed good Raman enhancement and highly efficient fluorescence quenching characteristic on these fluorescent dyes.     

Passivation of InAs/GaSb type II superlattice photodiodes

One of the major challenges faced by antimonide-based devices is a result of the large number of surface states that are generated. Surface passivation and subsequent capping of the surfaces are essential for any practical applicability of this material system, as evidenced by the comparison of unpassivated and passivated InAs/GaSb superlattice mid-infrared photodiodes herein. The surface passivation methods include silicon dioxide (SiO₂) coating after anodic sulfide, SiO₂ coating after anodic oxide, SiO₂ coating only, zinc sulfide (ZnS) coating after anodic sulfide, and ZnS coating after ammonium sulfide [(NH₄)₂S] chemical passivation. The leakage current as a function of bias voltage (I–V) for superlattice diodes obtained using different passivation methods has been examined at 77 K. The best performance was demonstrated by the SiO₂ after anodic sulfide passivation. The leakage current of the passivated diode is four orders of magnitudes less than that of the unpassivated diode.     

Optimized AC conductivity correlated to structure,morphology and thermal properties of PVDF/PVA/Nafion composites

Polyvinylidene fluoride (PVDF) and polyvinyl alcohol (PVA) composites were prepared by controlled loading of Nafion (5 to 15 wt%) by solution casting using water and dimethylformamide (DMF) as a solvent. The surface morphology of composite analyzed by atomic force microscopy (AFM) reveals the presence of Nafion ionomers. The increase in interlayer spacing of modified PVDF/PVA polymer system as a function of Nafion was detected by X-ray diffraction (XRD). The major change in Fourier transform infrared (FTIR) spectroscopy confirms the chemical bond C=O stretching around 1,700 cm^?1 due to Nafion. Differential scanning calorimetry (DSC) demonstrates the thermal stability of polymer composites and the decrease in melting temperature (T _m). The optimized AC conductivity (σ) of the prepared composite was evaluated by using an impedance analyzer as a function of temperature (40 to 150 °C) at constant 30-MHz frequency. The highest conductivity of 1.3?×?10^?2 S m^?1 was observed at 80 °C for 10 wt% of Nafion and correlated with structure, morphology and thermal properties of modified PVDF/PVA/Nafion composites. The experimental results may be useful for sensors, fuel cells and battery application domains.     

Effect of SiO2–metal–SiO2 plasmonic structures on InGaAs/GaAs quantum well intermixing

Dielectric–metal–dielectric sandwich structures have been fabricated on top of an InGaAs/GaAs single quantum well (QW) structure to enhance atomic interdiffusion across the QW interfaces at elevated temperature during rapid thermal annealing using a halogen lamp as the heating source. The QW intermixing enhancement is realized during rapid thermal annealing. By placing a properly designed SiO₂–Ag–SiO₂ structure on top of the QW sample, a blueshift in photoluminescence emission from 920 to 882 nm was observed, larger than that obtained in a SiO₂-capped QW annealed at the same condition. Finite-difference time-domain simulation and optical reflectance measurements showed that the enhanced QW intermixing is due to the plasmonic resonance-enhanced light absorption and suppressed light reflection from the SiO₂–Ag–SiO₂ structure.     

An in silico protocol for identifying mTOR inhibitors from natural products

The mammalian target of rapamycin (mTOR) is an anti-cancer target. In this study, we propose an in silico protocol for identifying mTOR inhibitors from the ZINC natural product database. First, a three-dimensional quantitative structure–activity relationship pharmacophore model was built based on known mTOR inhibitors. The model was validated with an external test set, Fischer’s randomization method, a decoy set and pharmacophore mapping conformation testing. The results showed that the model can predict the mTOR inhibition activity of the tested compounds. Virtual screening was performed based on the best pharmacophore model, and the results were then filtered using a molecular docking approach. In addition, molecular mechanics/generalized born surface area analysis was used to refine the selected candidates. The top 20 natural products were selected as potential mTOR inhibitors, and their structural scaffolds could serve as building blocks in designing drug-like molecules for mTOR inhibition.     

THz photomixer with milled nanoelectrodes on LT-GaAs

A terahertz (THz) photomixer: (i) a meander type antenna with integrated nanoelectrodes on (ii) a low temperature grown GaAs has been fabricated and characterized. It was designed for spectral range of 0.3–0.4 THz where molecular fingerprinting and sensing are performed. By combination of electron beam lithography with post-processing using focused ion beam (FIB), milling the THz emitter was successfully fabricated. Nanogaps as small as 40 nm width in the active area of photomixer were milled by FIB. Nanocontacts enhance electric fields of the illuminated and THz radiation and contribute to a better collection of photo-electrons. THz emission was obtained and spectrally characterized.     

System design considerations for precision measurement of high magnetic fields by Faraday effect

Practical and technical considerations for an instrument designed to measure high magnetic fields by Faraday effect are given. Magnetic fields up to 2 Tesla were measured and the results compared to those of Nuclear Magnetic Resonance technique. Results of measurements at low temperatures are also reported.     

Specular X-ray reflectivity study of interfacial SiO2 layer in thermally annealed NiO/Si assembly

Present report details an analysis of X-ray reflectivity (XRR) for solution processed NiO thin films on Si (100) substrates. The films were annealed at 700–1,000 °C for 1 h in air. XRR data indicated growth of SiO₂ layer from ~8 nm at 700 °C to ~66 nm at 1,000 °C along with significant variation of electron density profile. X-ray photoelectron spectroscopy and X-ray diffraction studies were used as supporting studies for phase purity and oxidation states of the NiO thin films as well as interfacial SiO₂ layer.     

The KLL Auger spectrum of fluorine

The KLL Auger spectrum of fluorine (Z=9) has been studied in three different fluoride salts. Five Auger lines are observed in each compound in accordance with extreme LS coupling theory. A cation dependence of the Auger transition energies and line-widths is observed. The energy shifts are in agreement with a theoretical model.     

Label Free Fluorometric Characterization of DNA Interaction with Cholate Capped Gold Nanoparticles Using Ethidium Bromide as a Fluorescent Probe

We demonstrated label free ethidium bromide assisted characterization of DNA interaction with cholate capped AuNPs. Interactions between ss/ds DNA and AuNPs with two different lengths (0.5 and 0.85 kb) were analyzed through fluorescence spectrophotometer and agrose gel electrophoresis analysis. Further results were confirmed by UV–globally visible spectrophotometer, DLS and TEM. As 0.5 and 0.85 kb of ssDNA effectively interacted with AuNPs through the van der Waals interaction which consequently led to the prevention of salt induced aggregation, EtBr intercalations as well as fluorescence shift with less binding constant 0.098 and 0.108 μM, respectively. On the contrary, the same length of dsDNA (0.5 and 0.85 kb) not interacted with AuNPs which led to the NPs aggregation, EtBr intercalation as well as fluorescence shift with increased binding constant 0.166 and 0.599 μM, respectively. This approach helped to understand the mode of interactions of DNA with cholate capped AuNPs without any modifications in a simple method and the results could be readout through the naked eye under the UV transilluminator. Figure

Fluorometric characterization of interaction of different lengths of ss/dsDNA with cholate capped AuNPs using EtBr as fluorescence probe     

On the morphology of Si/SiO2/Ni nanostructures with swift heavy ion tracks in silicon oxide

Si/SiO₂/Ni nanostructures are fabricated by the irradiation of an oxidized Si surface with swift heavy ions, nanopore etching in the SiO₂ layer, and the electrochemical deposition of nickel in the nanopores with their partial (～50%) or complete filling. Studies of the morphology of the metal in the nanopores shows that the nickel-cluster structure is rather homogeneous and formed by crystallites ～30–50 nm in size. The effects of deposition modes and structure morphology on current transport are analyzed with the use of test temperature dependences of the magnetoresistance. The reproducibility and stability of the magnetoresistance values for the case of homogeneous structure and pore filling with nickel make the Si/SiO₂/Ni system promising for application as the base element for high-sensitivity low-temperature magnetic field sensors.     

Radiative lifetimes of some energy levels of doubly ionized Xenon

Using 1–5 MeV Xenon ions we have studied the beam-foil spectrum of Xenon between 105 nm and 500 nm. Radiative lifetimes were measured for levels of Xenon III. For those lifetimes which have been measured previously (Andersen et al. [l]) good agreement is obtained. The interpretation of the decay curves and the assignment of a measured value, were done with the help of theoretical lifetimes obtained by Coulomb-approximation calculations [2].     

SERS scaling rules

We demonstrate the qualitative analysis of surface-enhanced Raman scattering (SERS) intensity and optical extinction by experimentally and numerically. This analytical methods are well matched not only the simple square lattice array of nanostructures, but also the rectangular lattices. We also demonstrate SERS selectivity of modes controlling the optical extinction of excitation and scattering wavelength. Both square lattice and rectangular lattice have similar tendency, but the rectangular lattice structures have much higher selectivity of SERS modes.     

Characterization of hydrophobic,oxidized porous silicon layer formed by anodic etching of n+-type silicon surface in a HF:C2H5OH:HCl:H2O2:H2O electrolyte for bio-application

Porous silicon (PS) has been prepared in the dark by anodic etching of n⁺-type (111) silicon substrate in a HF:HCl:C₂H₅OH:H₂O₂:H₂O electrolyte. The processed PS layer is characterized by means of photoluminescence (PL) spectroscopy, scanning electron microscope (SEM), water contact angle (CA) measurements, Fourier transform infrared (FTIR) spectroscopy, X-ray photoelectron spectroscopy (XPS) and micro-Raman scattering. The CA of fresh PS layer is found to be ~142°. On aging at ambient conditions, the CA decreases gently to reach ~133° after 3 month, and then it is stabilized for a prolonged time of aging. The visible PL emission from the PS layer also exhibits a good stability against aging time. The FTIR and XPS measurements and analysis show that the stable aged PS layer has rather SiO₂-rich surface. The micro/nanostructure nature of the PS layer is revealed from SEM and micro-Raman results and correlated to CA results. Stable hydrophobic surface of oxidized PS layer is attractive for bio-applications. The efficiency of the produced PS layers as an entrapping template for specific immobilization of IgG2a antibody via physical absorption process is demonstrated.     

Enhanced effect of side-Ohmic contact processing on the 2DEG electron density and electron mobility of In0.17Al0.83N/AlN/GaN heterostructure field-effect transistors

From the capacitance–voltage curves and current–voltage characteristics of the In_0.17Al_0.83N/AlN/GaN heterostructure field-effect transistors (HFETs) with side-Ohmic contacts and normal-Ohmic contacts, two-dimensional electron gas (2DEG) electron mobility was calculated. It is found that the polarization Coulomb field scattering (PCF) is closely related to the normal-Ohmic contact processing, and the PCF was weakened by side-Ohmic contact processing in In_0.17Al_0.83N/AlN/GaN HFETs, similar to that in AlGaN/AlN/GaN HFET devices. Further, due to the stronger spontaneous polarization in the thinner In_0.17Al_0.83N barrier layer, the influence of the gate bias on the PCF in In_0.17Al_0.83N/AlN/GaN HFETs is greater than that in AlGaN/AlN/GaN HFETs. As a result, the PCF in In_0.17Al_0.83N/AlN/GaN HFETs with side-Ohmic contacts is stronger than that in AlGaN/AlN/GaN HFETs with side-Ohmic contacts. Moreover, the 2DEG electron density in the In_0.17Al_0.83N/AlN/GaN HFETs with side-Ohmic contacts is increased by more than twice compared with the 2DEG electron density in the In_0.17Al_0.83N/AlN/GaN HFETs with normal-Ohmic contacts.     

Laser generated Ag and Ag–Au composite nanoparticles for refractive index sensor

Localized surface plasmon resonance (LSPR) wavelength of metal nanoparticles (NPs) is highly sensitive to size, shape and the surrounding medium. Metal targets were laser ablated in liquid for preparation of spherical Ag and Ag@Au core–shell NP colloidal solution for refractive index sensing. The LSPR peak wavelength and broadening of the NPs were monitored in different refractive index liquid. Quasi-static Mie theory simulation results show that refractive index sensitivity of Ag, Ag–Au alloy and Ag@Au core–shell NPs increases nearly linearly with size and shell thickness. However, the increased broadening of the LSPR peak with size, alloy concentration and Au shell thickness restricts the sensing resolution of these NPs. Figure-of-merit (FOM) was calculated to optimize the size of Ag NPs, concentration of Ag–Au alloy NPs and Au shell thickness of Ag@Au core–shell NPs. The refractive index sensitivity (RIS) and FOM were optimum in the size range 20–40 nm for Ag NPs. Laser generated Ag@Au NPs of Au shell thickness in the range of 1–2 nm showed optimum FOM, where thin layer of Au coating can improve the stability of Ag NPs.     

Behavior of charges locally injected into nanothin high-k SmScO3 dielectric

The behavior of charges locally injected from the probe of an atomic force microscope into nanothin films of high-k SmScO₃ dielectric deposited on a silicon substrate is studied by the method of Kelvin probe force microscopy. Prior to examination, the films were annealed at different temperatures. At temperatures above 900°C, the amorphous as-prepared films exhibit polycrystalline inclusions. In the films annealed at 900°C, the injected charge persists for a long time that several tens of times exceeds the charge retention time observed when conventional dielectrics, such as SiO₂ and Si₃N₄, are used. In addition, the diffusion of carriers in the plane of the dielectric layers sharply slows down.