Surface plasmon resonance and surface-enhanced Raman scattering activity of SiO2–Au core-cap nanostructure arrays

SiO₂–Au core-cap nanostructure arrays were prepared by dip-coating technique combined with wet chemical reduction method. The surface morphologies, structures, and optical properties of the obtained samples were characterized by scanning electron microscopy, X-ray diffraction, and ultraviolet–visible spectrophotometer, respectively. The surface-enhanced Raman scattering (SERS) activity of SiO₂–Au core-cap nanostructure arrays substrates was investigated using leucine as probe molecule. And the relationship between the SERS effect and the surface plasmon resonance (SPR) peaks was discussed. High-quality, stable, and reproducible SERS spectra of leucine were successfully obtained. When the maximum SPR peak matched with the excitation wavelength, the substrate gave rise to the highest SERS enhancement. Furthermore, six different fluorescent dyes were also chosen as probe molecules. It was found that the substrate showed good Raman enhancement and highly efficient fluorescence quenching characteristic on these fluorescent dyes.     

Double-walled core-shell structured Si@SiO2@C nanocomposite as anode for lithium-ion batteries

Double-walled core-shell structured Si@SiO₂@C nanocomposite has been prepared by calcination of silicon nanoparticles in air and subsequent carbon coating. The obtained Si@SiO₂@C nanocomposite demonstrates a reversible specific capacity of about 786 mAh g^?1 after 100 cycles at a current density of 100 mA g^?1 with a capacity fading of 0.13 % per cycle. The enhanced electrochemical performance can be due to that the double walls of carbon and SiO₂ improve the electronic conductivity and enhance the compatibility of electrode materials and electrolyte as a result of accommodating the significant volumetric change during cycles. The interlayer SiO₂ may release the mechanical strain and enhance the interfacial adhesion between carbon shell and silicon core.     

Optimized AC conductivity correlated to structure,morphology and thermal properties of PVDF/PVA/Nafion composites

Polyvinylidene fluoride (PVDF) and polyvinyl alcohol (PVA) composites were prepared by controlled loading of Nafion (5 to 15 wt%) by solution casting using water and dimethylformamide (DMF) as a solvent. The surface morphology of composite analyzed by atomic force microscopy (AFM) reveals the presence of Nafion ionomers. The increase in interlayer spacing of modified PVDF/PVA polymer system as a function of Nafion was detected by X-ray diffraction (XRD). The major change in Fourier transform infrared (FTIR) spectroscopy confirms the chemical bond C=O stretching around 1,700 cm^?1 due to Nafion. Differential scanning calorimetry (DSC) demonstrates the thermal stability of polymer composites and the decrease in melting temperature (T _m). The optimized AC conductivity (σ) of the prepared composite was evaluated by using an impedance analyzer as a function of temperature (40 to 150 °C) at constant 30-MHz frequency. The highest conductivity of 1.3?×?10^?2 S m^?1 was observed at 80 °C for 10 wt% of Nafion and correlated with structure, morphology and thermal properties of modified PVDF/PVA/Nafion composites. The experimental results may be useful for sensors, fuel cells and battery application domains.     

Effect of SiO2–metal–SiO2 plasmonic structures on InGaAs/GaAs quantum well intermixing

Dielectric–metal–dielectric sandwich structures have been fabricated on top of an InGaAs/GaAs single quantum well (QW) structure to enhance atomic interdiffusion across the QW interfaces at elevated temperature during rapid thermal annealing using a halogen lamp as the heating source. The QW intermixing enhancement is realized during rapid thermal annealing. By placing a properly designed SiO₂–Ag–SiO₂ structure on top of the QW sample, a blueshift in photoluminescence emission from 920 to 882 nm was observed, larger than that obtained in a SiO₂-capped QW annealed at the same condition. Finite-difference time-domain simulation and optical reflectance measurements showed that the enhanced QW intermixing is due to the plasmonic resonance-enhanced light absorption and suppressed light reflection from the SiO₂–Ag–SiO₂ structure.     

System design considerations for precision measurement of high magnetic fields by Faraday effect

Practical and technical considerations for an instrument designed to measure high magnetic fields by Faraday effect are given. Magnetic fields up to 2 Tesla were measured and the results compared to those of Nuclear Magnetic Resonance technique. Results of measurements at low temperatures are also reported.     

The KLL Auger spectrum of fluorine

The KLL Auger spectrum of fluorine (Z=9) has been studied in three different fluoride salts. Five Auger lines are observed in each compound in accordance with extreme LS coupling theory. A cation dependence of the Auger transition energies and line-widths is observed. The energy shifts are in agreement with a theoretical model.     

Radiative lifetimes of some energy levels of doubly ionized Xenon

Using 1–5 MeV Xenon ions we have studied the beam-foil spectrum of Xenon between 105 nm and 500 nm. Radiative lifetimes were measured for levels of Xenon III. For those lifetimes which have been measured previously (Andersen et al. [l]) good agreement is obtained. The interpretation of the decay curves and the assignment of a measured value, were done with the help of theoretical lifetimes obtained by Coulomb-approximation calculations [2].     

Heat capacity of oxides in the Bi2O3-SiO2 system

The high-temperature heat capacity of Bi₄Si₃O₁₂, Bi₂SiO₅, and Bi₁₂SiO₂₀ has been investigated. It has been found that there is a correlation between the specific heat C _p ⁰ (298 K) and the composition of oxides in the Bi₂O₃-SiO₂ system.     

Plasma-assisted hot filament chemical vapor deposition of AlN thin films on ZnO buffer layer: toward highly c-axis-oriented,uniform, insulative films

c-Axis-oriented aluminum nitride (AlN) thin film with improved quality was deposited on Si(111) substrate using ZnO buffer layer by plasma-assisted hot filament chemical vapor deposition. The optical and electrical properties and surface morphology as well as elemental composition of the AlN films deposited with and without ZnO buffer layer were investigated using a host of measurement techniques: X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, field emission scanning electron microscopy (FESEM), and current–voltage (I–V) characteristic measurement. The XRD and XPS results reveal that the AlN/ZnO/Si films are free of metallic Al particles. Also, cross-sectional FESEM observations suggest formation of a well-aligned, uniform, continuous, and highly (002) oriented structure for a bi-layered AlN film when Si(111) is covered with ZnO buffer. Moreover, a decrease in full width at half maximum of the E₂ (high)-mode peak in Raman spectrum indicates a better crystallinity for the AlN films formed on ZnO/Si substrate. Finally, I–V curves obtained indicate that the electrical behavior of the AlN thin films switches from conductive to insulative when film is grown on a ZnO-buffered Si substrate.     

Passivation of InAs/GaSb type II superlattice photodiodes

One of the major challenges faced by antimonide-based devices is a result of the large number of surface states that are generated. Surface passivation and subsequent capping of the surfaces are essential for any practical applicability of this material system, as evidenced by the comparison of unpassivated and passivated InAs/GaSb superlattice mid-infrared photodiodes herein. The surface passivation methods include silicon dioxide (SiO₂) coating after anodic sulfide, SiO₂ coating after anodic oxide, SiO₂ coating only, zinc sulfide (ZnS) coating after anodic sulfide, and ZnS coating after ammonium sulfide [(NH₄)₂S] chemical passivation. The leakage current as a function of bias voltage (I–V) for superlattice diodes obtained using different passivation methods has been examined at 77 K. The best performance was demonstrated by the SiO₂ after anodic sulfide passivation. The leakage current of the passivated diode is four orders of magnitudes less than that of the unpassivated diode.     

Synthesis of fluorescent carbon dots from one-step pyrolysis of frontal-polymerized poly(acrylamide-co-4-vinylpyridine)

We report herein the synthesis of carbon dots (CDs) by a one-step pyrolysis from poly(acrylamide-co-4-vinylpyridine) [poly(AAM-co-4-VP)]. The poly(AAM-co-4-VP) was fabricated using frontal polymerization within 5 min in an easy and rapid way and then was pyrolyzed to afford CDs. The as-prepared CDs show crystalline structure and excellent dispersibility with particle sizes in the range of 2–4 nm. The optical properties were throughly investigated, and we found the CDs exhibit strong blue fluorescence with quantum yield of ~18 % and excellent photoluminescent stability, which is rarely influenced by the external conditions. This process can be exploited as an effective path for synthesis CDs with polymers by a facile and rapid way.     

Cesium profiles in silicon and in SiO2-Si double-layers as determined by SIMS measurements

Secondary ion mass spectrometry is used to determine

1. the range distributions of 10–100 keV cesium ions implanted into monocrystalline silicon and
2. the cesium profiles in SiO₂-Si double layers formed by implantation of cesium into silicon surfaces and subsequently converting the implanted layer into SiO₂ through thermal oxidation at 800°C and 1000°C.

In the first case (a) non-Gaussian distributions are observed for the implanted cesium atoms. Their projected ranges show a somewhat stronger energy dependence as predicted from LSS-theory. The values for standard deviations and third central moments are in good agreement with theory at low energies but are larger up to a factor of 1.5 at higher energies. In the second case (b) cesium ions present in the implanted silicon layer are introduced into the growing oxide layer during oxidation and pile up at both oxide interfaces.     

Luminescent properties of Eu2+ ions in AlN at low and high intensity of excitation

Luminescent properties of powder AlN∶Eu²⁺ phosphors were studied by excitation of 2-nd harmonic of ruby laser (hv=3·56 eV). It was shown that emission spectra of AlN∶Eu²⁺ phosphors consist of five or two overlapping bands according to the concentration of europium and the intensity of excitation. Decay times of luminescence of Eu²⁺ centres in different peaks lie between 0·9 and 1·5 μsec which is in agreement with the value of decay time of 4f⁶ 5d→47⁷ transition of Eu²⁺ ions. It is evident from the decomposition of emission spectra of Eu²⁺ centres that there exist several types of Eu²⁺ centres in AlN as was already demonstrated in the case of oxygen centres in AlN.     

Methods of IR spectroscopy in monitoring of chemotherapy of oncological pathologies using palladium complexes

FTIR spectroscopy is used to study mammary-gland tissues of mice with a sarcoma tumor (strain 180). Spectral features that are typical of malignant tumors are revealed in the FTIR spectra in the sarcoma-tumor tissues. Tumor tissues are studied after treatment using coordination compounds based on palladium complexes with 3-amino-1-hydroxypropylidene-1,1-diphosphonic acid and zoledronic acid. A therapeutic effect is not revealed after treatment using palladium complex with 3-amino-1-hydroxypropylidene-1,1-diphosphonic acid. The suppression of tumor growth amounts to 59% when palladium complexes with zoledronic acid are used. Suppression of tumor growth is accompanied by variations in spectral characteristics. With respect to diagnostic features, the FTIR spectra of tumor tissues after treatment with the palladium complexes with zoledronic acid are similar to the FTIR spectra of tissues that are free of malignant tumors. Specific spectroscopic characteristics that make it possible to control the chemotherapy of oncological pathologies are determined.     

Specular X-ray reflectivity study of interfacial SiO2 layer in thermally annealed NiO/Si assembly

Present report details an analysis of X-ray reflectivity (XRR) for solution processed NiO thin films on Si (100) substrates. The films were annealed at 700–1,000 °C for 1 h in air. XRR data indicated growth of SiO₂ layer from ~8 nm at 700 °C to ~66 nm at 1,000 °C along with significant variation of electron density profile. X-ray photoelectron spectroscopy and X-ray diffraction studies were used as supporting studies for phase purity and oxidation states of the NiO thin films as well as interfacial SiO₂ layer.     

Beam-foil lifetime measurements on energy levels of singly ionized Xenon

Radiative lifetimes were measured for levels of Xenon II by use of the beam-foil technique. Results are compared with other experimental and theoretical data. The coulomb approximation [1] was used to calculate lifetimes of the higher levels of Xenon II to facilitate an unambiguous assignment of the measured lifetime to a level.     

Synthesis at the nanoscale of ZnO into poly(methyl methacrylate) and its characterization

In this paper, PMMA/ZnO nanocomposites have been prepared by a very simple, facile and versatile chemical approach. The prepared PMMA/ZnO nanocomposites possess no color, high transparency, good thermal stability, UV-shielding capability, luminescence and homogeneity. The chemical process involved solution mixing of ZnO nanoparticles dispersed in DMAc with the Polymethylmethacrylate (PMMA) matrix dissolved in the same solvent. The effect of ZnO content on the physical properties of the PMMA matrix is investigated by X-ray diffraction, field emission scanning electron microscopy, thermogravimetric analysis, UV–Vis absorption and photoluminescence spectroscopy. It was found that pure hexagonal ZnO nanoparticles with an average particle size of 4–8 nm were homogeneously dispersed in the PMMA matrix. A significant improvement in thermal properties was observed with the incorporation of 1.0 wt% ZnO nanoparticles. The prepared nanocomposite films are highly transparent and a clear excitonic peak is observed in their absorption spectra. Measurement of room temperature photoluminescence spectra shows intensive near-band edge emission peak at 3.28 eV without any structural defects for a nanocomposite film with a filler content of 1.0 wt%.     

The secondary-electron background problem in electron excited auger electron spectroscopy

Dynamic background subtraction is used to demonstrate that the recently suggested spline-polynomial scheme for characterizing the secondary electron background neglects an important aspect of the Auger feature. As a consequence of this neglect, area measurements using the spline approximation are difficult to relate to the true Auger current.     

THz photomixer with milled nanoelectrodes on LT-GaAs

A terahertz (THz) photomixer: (i) a meander type antenna with integrated nanoelectrodes on (ii) a low temperature grown GaAs has been fabricated and characterized. It was designed for spectral range of 0.3–0.4 THz where molecular fingerprinting and sensing are performed. By combination of electron beam lithography with post-processing using focused ion beam (FIB), milling the THz emitter was successfully fabricated. Nanogaps as small as 40 nm width in the active area of photomixer were milled by FIB. Nanocontacts enhance electric fields of the illuminated and THz radiation and contribute to a better collection of photo-electrons. THz emission was obtained and spectrally characterized.