Multisites Cr3+ in GGG and GSGG garnets

The emission and excitation spectra of Cr³⁺ -doped Gd₃Ga₅O₁₂ (GGG) and Gd₃Sc₂Ga₃O₁₂ (GSGG) are explained in the light of multisite effects. The situation is particularly complicated in the case of GSGG, where the different sites have²E energy levels near each other which overlap with the⁴A₂ →⁴T₂ absorption bands. The spectra obtained under selective excitations are interpreted on the multisite assumption.     

Gamma-ray irradiation effect on the absorption and luminescence spectra of Nd:GGG and Nd:GSGG laser crystals

Laser crystals Nd³⁺:Gd₃Ga₅O₁₂ (Nd:GGG) and Nd³⁺:Gd₃Sc₂Ga₃O₁₂ (Nd:GSGG) were grown by Czochralski method. The influence of gamma-ray irradiation on their absorption and luminescence spectra has been investigated. Two additional absorption (AA) bands induced by gamma-ray irradiation appear in the spectra of Nd:GGG crystal while only a very weak AA band appears for the Nd:GSGG crystal. This indicated that Nd:GSGG crystal has stronger ability to resist the color center formation by irradiation. The intensity of the excitation and emission spectra of Nd:GGG crystal decrease after the irradiation of 100 Mrad gamma-ray. In contrast, a luminescence strengthening effect was observed in Nd:GSGG crystal after exposure to the same irradiation dose. The results showed that the Nd:GSGG crystal is a promising candidate used under radiation environments such as in outer space.     

Temperature dependence of the lifetime of Cr3+ luminescence in garnet crystals

The coexistence of sharp R-lines from the ² E state and the broad band from the ⁴ T ₂ state in the photoluminescence spectra of Cr³⁺:Gd₃Sc₂Ga₃O₁₂ (GSGG) and Cr³⁺:Y₃Ga₅O₁₂ (YGG) is observed at low temperature (10K). The decay lifetimes of the broad emission bands of Cr³⁺ in GSGG and YGG are very close to those of the R-lines being, respectively, 0.23 ms and 2.5 ms. These results are explained in terms of the extent of the mixing of the ⁴ T ₂ vibronic wavefunction with that of the ² E lowest excited state by tunnelling.     

The effect of relative plasma plume delay on the properties of complex oxide films grown by multi-laser, multi-target combinatorial pulsed laser deposition

We report the effects of relative time delay of plasma plumes on thin garnet crystal films fabricated by dual-beam, combinatorial pulsed laser deposition. Relative plume delay was found to affect both the lattice constant and elemental composition of mixed Gd₃Ga₅O₁₂ (GGG) and Gd₃Sc₂Ga₃O₁₂ (GSGG) films. Further analysis of the plasmas was undertaken using a Langmuir probe, which revealed that for relative plume delays shorter than 200 μs, the second plume travels through a partial vacuum created by the first plume, leading to higher energy ion bombardment of the growing film. The resulting in-plane stresses are consistent with the transition to a higher value of lattice constant normal to the film plane that was observed around this delay value. At delays shorter than 10 μs, plume propagation was found to overlap, leading to scattering of lighter ions from the plume and a change in stoichiometry of the resultant films.     

Production and characterization of Nd,Cr:GSGG thin films on Si(001) grown by pulsed laser ablation

Nd,Cr:Gd₃Sc₂Ga₃O₁₂ (GSGG) thin films have been produced for the first time. They were grown on Si(001) substrates at 650 °C by pulsed laser ablation at 248 nm of a crystalline Nd,Cr:GSGG target rod. The laser plume was analyzed using time-of-flight quadrupole mass spectroscopy, and consisted of elemental and metal oxide fragments with kinetic energies typically in the range 10 to 40 eV, though extending up to 100 eV. Although films deposited in vacuum using laser fluences of 0.8±0.1 J cm⁻² reproduced the Nd,Cr:GSGG bulk stoichiometry, those deposited using fluences above ≈3 J cm⁻² resulted in noncongruent material transfer and were deficient in Ga and Cr. Attempts to grow films using synchronized oxygen or oxygen/argon pulses yielded mixed oxide phases. Under optimal growth conditions, the films were heteroepitaxial, with GSGG(001)[100]∥Si(001)[100], and exhibited Volmer–Weber-type growth. Room-temperature emission spectra of the films suggest efficient non-radiative energy transfer between Cr³⁺ and Nd³⁺ ions, similar to that of the bulk crystal. Received: 1 October 1999 / Accepted: 15 October 1999 / Published online: 23 February 2000     

Optical absorption by Nd<Superscript>3+</Superscript> and Gd<Superscript>3+</Superscript> ions in epitaxial films grown on Gd<Subscript>3</Subscript>Ga<Subscript>5</Subscript>O<Subscript>12</Subscript> substrates from a lead-containing solution melt

Epitaxial films of composition (Gd,Nd)₃Ga₅O₁₂ or (Gd,Y,Nd)₃Ga₅O₁₂ with a neodymium content varying from 0.3 to 15 at. % are grown by liquid-phase epitaxy from a supercooled PbO-B₂O₃-based solution melt on Gd₃Ga₅O₁₂(111) substrates. The optical absorption spectra of the epitaxial films grown are measured in the wavelength range 0.2–1.0 µm. The results of interpreting the absorption bands observed in the spectra are used to construct the energy level diagrams of Nd³⁺ and Gd³⁺ ions in the matrices of the epitaxial films.     

Timing characteristics of the scintillation response of Gd3Al2Ga3O12:Ce and Gd3Al2.6Ga2.4O12:Ce single crystal scintillators

The timing characteristics of scintillation response of Czochralski-grown Gd₃Al₂Ga₃O₁₂:Ce and Gd₃Al_2.6Ga_2.4O₁₂:Ce single crystals were compared. The photoelectron yield, scintillation decay times, and coincidence time resolution were measured. At 662 keV γ-rays, the photoelectron yield of 6200 phe MeV⁻¹ obtained for Gd₃Al₂Ga₃O₁₂:Ce is higher than that of 4970 phe MeV⁻¹ obtained for Gd₃Al_2.6Ga_2.4O₁₂:Ce, while an inferior energy resolution of the former (7.2% vs. 5.6%) is observed. Scintillation decays are approximated by sum of exponentials with the dominant fast component decay time and its relative intensity of 89 ns (73%) for Gd₃Al₂Ga₃O₁₂:Ce and 136 ns (69%) for Gd₃Al_2.6Ga_2.4O₁₂:Ce. The coincidence time resolution obtained for Gd₃Al₂Ga₃O₁₂:Ce is superior than that of Gd₃Al_2.6Ga_2.4O₁₂:Ce. The normalized time resolution was also discussed in terms of a number of photoelectrons and decay characteristics of the light pulse.     

57Fe Emission Mössbauer Study on Gd3Ga5O12 implanted with dilute57Mn

⁵⁷Fe emission Mössbauer spectroscopy has been applied to study the lattice location and properties of Fe in gadolinium gallium garnet Gd₃Ga₅O₁₂ (GGG) single crystals in the temperature interval 300 – 563 K within the extremely dilute (<10^?4 at.%) regime following the implantation of⁵⁷Mn (T¹_/2= 1.5 min.) at ISOLDE/CERN. These results are compared with earlier Mössbauer spectroscopy study of Fe-doped gadolinium gallium garnet Gd₃Ga₅O₁₂(GGG), with implantation fluences between 8×10¹⁵ and 6×10¹⁶ atoms cm^?2. Three Fe components are observed in the emission Mössbauer spectra: (i) high spin Fe²⁺ located at damage sites due to the implantation process, (ii) high spin Fe³⁺ at substitutional tetrahedral Ga sites, and (iii) interstitial Fe, probably due to the recoil imparted on the daughter^57?Fe nucleus in the β^? decay of⁵⁷Mn. In contrast to high fluence⁵⁷Fe implantation studies the Fe³⁺ ions are found to prefer the tetrahedral Ga site over the octahedral Ga site. No annealing stages are evident in the temperature range investigated. Despite the very low concentration, high-spin Fe³⁺ shows fast spin relaxation, presumably due to an indirect interaction between nearby gadolinium atoms.     

High‐perfomance Ce‐doped multicomponent garnet single crystalline film scintillators

We report for the first time the optimized content and excellent scintillation properties of single crystalline film (SCF) scintillators of multicomponent Gd_3–xLu_x Al_5–yGa_y O₁₂:Ce garnet compounds grown by liquid phase epitaxy (LPE) method. The Gd_1.5Lu_1.5Al_2.75Ga_2.25O₁₂:Ce and Gd₃Al_2.75–2Ga_2.25–3O₁₂:Ce SCF show the light yield (LY) comparable with that of high‐quality bulk crystal analogues of these garnets but faster scintillation decay and very low thermoluminescence in the above room temperature range. To our knowledge, these SCF possess the highest LY values ever obtained in LPE grown garnet SCF scintillators exceeding by at least 1.5–1.6 times the values previously reported for SCF scintillators.

     

Electrical transport properties of gadolinium scandium gallium garnet

Electrical conductivity and thermoelectric power are measured on a single crystal of Gd_3.0Sc_1.8Ga_3.2O₁₂ (GSGG) between 1273 and 1673 K. The measurements are made both in air and in controlled atmospheres, and P_O2 varies from 10^?1.68 to 10^?5.6 MPa. The data indicate GSGG may well be a mixed conductor in this temperature and P_O2 range, with n-type electronic conductivity and ionic transport on the oxygen sublattice. Changes in temperature induce long-lived disequilibrium in electrical conductivity of GSGG (over 30 h at T < 1373 K) that can be explained by temperature dependent cation redistribution. The effective activation energy for equilibrium electrical conductivity is E_a = 2.40 ± 0.05 eV, as opposed to values of E_a between 1.8 and 2.2 eV during actual temperature changes. An additional contribution in the equilibrium E_a, due to thermally activated cation redistribution, can account for the higher value seen.     

Spectroscopic analysis of Cr,Er:Gd3Ga5O12 crystals as candidates of potential xenon lamp pumped ~ 2.7 μm laser

A series of Cr,Er:Gd₃Ga₅O₁₂ crystals with high concentrations of Er^3 + were grown by Czochralski method. The absorption spectra, the up-conversion, near infrared (NIR) and mid-infrared (Mid-IR) luminescence spectra as well as the luminescence decay curves of Er: ⁴I_13/2 and ⁴I_11/2 levels were measured at room temperature. The spectroscopic properties of Cr,Er:Gd₃Ga₅O₁₂ crystals and Cr–Er energy transfer processes were investigated. The spectroscopy of the Er^3 +:⁴I_11/2 → ⁴I_13/2 transition was centralized to discuss, and the important optical parameters including luminescence lifetimes and the Cr–Er energy transfer efficiency are presented. Based on the comprehensive spectral analyses, 0.6 at.%Cr/50 at.%Er:GGG crystal is preferred as candidate of potential xenon lamp pumped ~ 2.7 μm laser in this work.     

Application of electrical discharges at the surface of a ferroelectric material for exciting the thermoluminescence of crystals

A plasma generated at the surface of a ferroelectric ceramic has been applied for exciting the thermoluminescence of the KCl, Gd₃Ga₅O₁₂ (GGG), Al₂O₃, Al₂O₃Cr, and Y₃Al₅O₁₂ (YAG) crystals. It has been found that this excitation technique is very useful in studying the trap centers.     

EPR Spectra of Cr3+ Ions in Sr3Ga2Ge4O14:Cr Single Crystals

The results of investigations of chromiumdoped Sr₃Ga₂Ge₄O₁₄ single crystals by the EPRspectroscopy method are presented. It is shown that activating chromium ions form Cr³⁺ Ga³⁺ (Ge⁴⁺) substitution centers in the 1aoctahedral positions of the lattice of Sr₃Ga₂Ge₄O₁₄. Depending on the combination of occupation of the 3ftetrahedral positions of the first cationic coordination sphere by Ga³⁺ and Ge⁴⁺ ions, Cr³⁺ centers of two types are formed. Their individual magnetic spectra are characterized by axial and rhombic symmetry. The magnetic multiplicity of the axialsymmetry spectrum is equal to unity. There exist rhombicsymmetry centers of two types differing in the orientation of the principal magnetic axes and the value of the spinHamiltonian parameter E. The magnetic multiplicity of the individual magnetic spectra of rhombic centers of each type is equal to three. The detected EPR spectra of Cr³⁺ ions have been described by the spin Hamiltonian of rhombic symmetry. Its parameters and their spread have been determined.     

Spectrum designation and effect of Al substitution on the luminescence of Cr doped ZnGa2O4 nano-sized phosphors

Low-temperature photoluminescent spectra of ZnGa₂O₄:Cr³⁺ nano-sized phosphors calcined at different temperatures were reported. The fine structure of the emission spectra has been designated to Cr³⁺ ions in different sites including ideal octahedral, Zn-interstitial, sites and Ga₂O₃ impurity. The vibronic sidebands for both Stokes’ and anti-Stokes’ sides are related to the host lattice vibrations, which were confirmed by IR and Raman spectra. Al³⁺ is substituted in Ga³⁺ sites to form (0≤y≤0.5). The blue shift and luminescent intensity variations of the charge transfer band and 3d-3d transitions in the spectra caused by Al substitution were related to larger band gap and stronger crystal field, respectively. The calculated crystal-field parameters indicated that Al incorporation enhanced the crystal field strength and induced more trigonal distortion due to different radii of Al³⁺ and Ga³⁺.     

Phase-matched second-harmonic generation at 440 nm in a LiNbO3 -Gd3Ga5O12 waveguide with a tunable stimulated Raman source

Using a tunable stimulated Raman source, we have observed second-harmonic generation in the blue in a sputtered LiNbO₃ film deposited on Gd₃Ga₅O₁₂. With the choice of Gd₃Ga₅O₁₂ as a substrate, it becomes possible to both phase-match a large range of fundamental wavelengths as well as have an excellent epitaxial quality surface. The SHG efficiency for the TM^ω₀ → TM^2ω₂ phase matched conversion process is estimated to be ～ 10^-4.     

Gd3Ga5O12:Ag薄膜电致发光材料的制备及其发光性质

研究了Gd₃Ga₅O₁₂:Ag材料的制备及其发光性质.Gd₃Ga₅O₁₂:Ag材料通过固相反应法制得,采用X射线衍射法分 析了材料的结晶度及成分.用电子束蒸发将该材料制备成交流的薄膜电致发光器件,得到了 较好的蓝紫色发光,发光峰分别位于397和467nm.通过对材料的光致发光和激发光谱的研究 和比较,得出397和467nm分别来自于氧空位和Ag⁺的发光.     

Disorder and the shape of the R-lines in Cr3+-doped garnets

This paper describes measurements of the R-line emission from Cr³⁺ ions in Y₃Ga₅O₁₂, Gd₃Sc₂Ga₃O₁₂, and Gd₃Sc₂Al₃O₁₂. Discrete splittings of the lines are interpreted as due to disorder on the cation sublattices. Assuming statistical distributions of the cations on the different cation sublattices enables estimates to be made of the degree of non-stoichiometry in the crystals.     

Photochromic behaviour of doped Bi4Ge3O12 single crystal scintillators

The changes induced by ultraviolet (UV) illumination on the optical absorption and electron paramagnetic resonance (EPR) spectra of Bi₄Ge₃O₁₂ single crystals, doped either with Fe (and Gd) or Mn, have been followed at room temperature (RT). In both crystals several overlapping optical absorption bands develop under UV illumination, covering from 0.7 eV up to the band edge of the matrix. The optical damage can be bleached by heating the samples above RT or by illumination with visible light. Although these optical changes temporarily correlate with the variation of the Gd³⁺ and Mn²⁺ concentrations, it has been concluded that other defects are present and partially responsible for the optical damage.     

Epitaxial films (Bi,Gd)3(Ga,Pt)2Ga3O12 grown by liquid-phase epitaxy

Single-crystal films of complex composition (Bi,Gd)₃(Ga,Pt)₂Ga₃O₁₂ on Gd₃Ga₅O₁₂(111) substrates are synthesized by liquid-phase epitaxy from a supercooled solution-melt based on Bi₂O₃-B₂O₃ flux. Optical absorption of Bi³⁺ and Pt³⁺ ions in these films is investigated in the wavelength range from 200 to 860 nm.