Powder synthesis and electrical,dielectric spectroscopic characterization of rare earth disilicates (D-Er2Si2O7): Transistor scaling-22 nm or beyond

Rare earth disilicates are now a day's being analyzed as a dielectric layer for transistor scaling for the advanced 22 nm regime or beyond. So to explore these materials, the polymorphic powdered Er₂Si₂O₇ (D phase) is synthesized by solid state double sintering method to study its characteristics. Structural characterization has been performed by X-ray diffraction. SEM and EDX results shows the rods like morphology of particles and composition. The dc electrical properties are evaluated by two probe method as a function of temperature. The dielectric spectroscopic measurements of D-Er₂Si₂O₇ are performed in the temperature range 300–420 K and frequency range 1 kHz to 1 MHz. The dc electrical transport phenomenon is analyzed using Mott’s variable-range hopping approach. The ac conductivity σ_ac(ω) is obtained through the dielectric spectroscopic measurements.     

Impedance spectroscopy and conduction mechanism of multiferroic (Bi0.6K0.4)(Fe0.6Nb0.4)O3

Polycrystalline (Bi_0.6K_0.4) (Fe_0.6Nb_0.4)O₃ material has been prepared using a mixed-oxide route at 950 °C. It was shown by XRD that at room temperature structure of the compound is of single-phase with hexagonal symmetry. Some electrical characteristics (impedance, modulus, conductivity etc.) were studied over a wide frequency (1 kHz–1 MHz) and temperature (25–500 °C) ranges. The Nyquist plot (i.e., imaginary vs real component of complex impedance) of the material exhibit the existence and magnitude of grain interior and grain boundary contributions in the complex electrical parameters of the material depending on frequency, input energy and temperature. The nature of frequency dependence of ac conductivity follows Joncher׳s power law, and dc conductivity follows the Arrhenius behavior. The appearance of P–E hysteresis loop confirms the ferroelectric properties of the material with remnant polarization (2P_r) of 1.027 µC/cm² and coercive field (2E_c) of 16.633 kV/cm. The material shows very weak ferromagnetism at room temperature with remnant magnetization (2M_r) of 0.035 emu/gm and coercive field (2H_c) of 0.211 kOe.     

Structural and dielectric properties of Ba3V2O8 ceramics

Polycrystalline sample of Ba₃V₂O₈ was prepared by a high-temperature solid-state reaction technique. Preliminary X-ray diffraction (XRD) analysis confirms the formation of single-phase compound of hexagonal (rhombohedral) crystal structure at room temperature. Microstructural analysis by scanning electron microscope (SEM) shows that the compound has well defined grains, which are distributed uniformly throughout the surface of the sample. The dielectric properties of the compound studied in a wide frequency range (10²–10⁶ Hz) at different temperatures (25–400 °C), exhibits that they are temperature dependent. Detailed analysis of impedance spectra showed that the electric properties of the material are strongly dependent on frequency and temperature. The activation energy, calculated from the temperature dependence of ac conductivity (dielectric data), was found to be 0.23 eV at 50 kHz in the higher temperature region.     

Influence of V2O5 ion addition on the conductivity and grain growth of Ni–Zn–Cu ferrites

Polycrystalline nickel–zinc–copper ferrites with chemical formula Ni_0.6+xZn_0.2Cu_0.2V_xFe_2−2xO₄,(0.0 ⩽ x ⩽ 0.25) were prepared by the ceramic route. The X-ray diffraction (XRD) analysis of the samples results confirms single-phase spinel structure. Scanning electron microscopy (SEM) of the prepared ferrites reveal that vanadium addition resulted in a rapid grain growth with large pores trapped inside the grains as the vanadium concentration increases. The ac conductivity σ_ac has been studied as a function of frequency and temperature over the temperature range (300–600 K). The results obtained for these materials reveal a semiconductor – to semimetal transition as V⁵⁺ content increases. All studies composition exhibit a transition with change in the slope of conductivity. The obtained temperature T_c is found to be decrease with the increasing vanadium content. The hopping of electrons between Fe³⁺ and Fe²⁺ as well as the hole hopping between Ni³⁺ and Ni²⁺ are found to responsible for the conduction mechanism. The relation of the universal exponent s with temperature gives evidence for the presence of the correlation barrier hopping (CHB) mechanism in these compounds. The impedance technique has been used to study effect of grain and grain boundary on the electrical properties. The analysis data show only one semi-circle for all samples except for sample with x = 0.05. The results suggested that the conduction mechanism takes place predominantly through the grain in the studied samples.     

Ac and Dc conductivities of polyaniline/poly vinyl formal blend films

The synthesis and characterization of polyaniline (PANI)/poly vinyl formal (PVF) blend films were carried out in this work. Polyaniline base was doped using dodecylbenzene sulfonic acid (DBSA). These blend films were characterized by UV–Visible, FTIR spectra and scanning electron microscopy (SEM) to investigate their optical, structural and morphological properties. It was found that the percolation threshold of these blends is 4.4 wt% of PANI. The dc and ac conductivities of these blend films have been measured at a temperature range from 300 to 100 K in the frequency range of 10 kHz to 1 MHz. The electrical conductivity of the blend films enhanced with the increase of polyaniline amount up to a value of 2.5 × 10⁻⁴ S cm⁻¹ at 65 wt% of polyaniline. The dc conductivity of the PANI/PVF blend films follows the three-dimension variable range hopping. Temperature variation of frequency exponents in this blend suggests that ac conduction is attributed to be correlated barrier hopping.     

Structure,dielectric and optical properties of p-type (PVA/CuI) nanocomposite polymer electrolyte for photovoltaic cells

A novel PVA/CuI nanocomposite polymer electrolyte layer synthesized via the reduction of CuCl₂ by NaI in an aqueous PVA solution. The as-prepared films were characterized by X-ray diffraction, scanning electron microscope, as well as impedance spectroscopy. The obtained results indicated the formation of hexagonal CuI nano particles of ≈55 nm sizes embedded in the PVA matrix. In addition, the study of dielectric parameters and conductivity of PVA/CuI nanocomposite in wide range of temperature and frequency are given and discussed. The frequency dependence of ac-conductivity suggests power law with an exponent 0.026 < s < 0.73 which predicts hopping of charge carriers. The bulk conductivity showed activation with temperature, significant values of activation energy are deduced and discussed. An average value of the energy gap width, 2.05 eV obtained using optical absorption in UV–visible spectra for PVA/CuI nanocomposite polymer electrolyte.     

Finite size effect and influence of temperature on electrical properties of nanocrystalline Ni–Cd ferrites

Electrical conductivity and dielectric measurements have been investigated for four different average grain sizes ranging from 3 to 7 nm of nanocrystalline Ni_0.2Cd_0.3Fe_2.5−xAl_xO₄ (0.0 ⩽ x ⩽ 0.5) ferrites. The impedance spectroscopy technique has been used to study the effect of grain and grain boundary on the electrical properties of the Al doped Ni–Cd ferrites. The analysis of data shows only one semi-circle corresponding to the grain boundary volume suggesting that the conduction mechanism takes place predominantly through grain boundary volume in the studied samples. The variation of impedance properties with temperature and composition has been studied in the frequency range of 120 Hz–5 MHz between the temperatures 300–473 K. The hopping of electrons between Fe³⁺ and Fe²⁺ as well as hole hopping between Ni³⁺ and Ni²⁺ ions at octahedral sites are found to be responsible for conduction mechanism. The dielectric constant and loss tangent (tan δ) are found to decrease with increasing frequency, whereas they increase with increasing temperature. The dielectric constant shows an anomalous behavior at selected frequencies, while the temperature increases, which is expected due to the generation of more electrons and holes as the temperature increases. The behavior has been explained in the light of Rezlescu model.     

Electrical properties and electronic structure of Cu1−xZnxInSe2 and Cu1−xZnxInS2 single crystals

Temperature dependence of the electrical conductivity of CuInS₂–ZnIn₂S₄ and CuInSe₂–ZnIn₂Se₄ solid solutions possessing n-type conductivity has been studied. It has been established that when the temperature decreases down to ~100 to 27 K, the hopping mechanism of electrical conductivity with a variable jumping length between localized states positioned in a narrow energy band near the Fermi level becomes dominant. The main parameters of the hopping conductivity have been determined. At higher temperatures (150–300 K), in the CuInSe₂–ZnIn₂Se₄ single crystals containing 15 and 20 mol% ZnIn₂Se₄ the thermally activated conductivity with activation energy of 0.018 and 0.04 eV, respectively, is detected. Among the CuInSe₂–ZnIn₂Se₄ single crystals, samples with 5 and 10 mol% ZnIn₂Se₄ were found to be close to degenerate semiconductors. Temperature dependences of the electrical conductivity of CuInS₂–ZnIn₂S₄ single crystals are described by a more complicated function that may indicate a competition of several conduction mechanisms in these compounds. For the CuInS₂–ZnIn₂S₄ solid solutions, X-ray photoelectron core-level and valence-band spectra have been measured for both pristine and Ar⁺ ion-bombarded surfaces. Our results indicate that the Cu_1−xZn_xInS₂ single-crystal surfaces are sensitive to Ar⁺ ion-bombardment. Additionally, for the Cu_1−xZn_xInS₂ crystal with the highest ZnIn₂S₄ content, namely 12 mol% ZnIn₂S₄, the X-ray emission bands representing the energy distribution of the Cu 3d, Zn 3d and S 3p states have been measured and compared on a common energy scale with the X-ray photoelectron valence-band spectrum.     

Experimental and theoretical study of AC electrical conduction mechanisms of Organic–inorganic hybrid compound Bis (4-acetylanilinium) tetrachlorocadmiate (II)

A new organic–inorganic bis (4-acetylaniline) tetrachlorocadmate [C₈H₁₀NO]₂[CdCl₄] can be obtained by slow evaporation at room temperature and characterized by X-ray powder diffraction. It crystallized in an orthorhombic system (Cmca space group). The material electrical properties were characterized by impedance spectroscopy technique in the frequency range from 209 Hz–5 MHz and temperature 413 to 460 K. Besides, the impedance plots show semicircle arcs at different temperatures and an electrical equivalent circuit has been proposed to interpret the impedance results. The circuits consist of the parallel combination of a resistance (R), capacitance (C) and fractal capacitance (CPE). The variation of the exponent s as a function of temperature suggested that the conduction mechanism in Bis (4-acetylanilinium) tetrachlorocadmiate compound is governed by two processes which can be ascribed to a hopping transport mechanism: correlated barrier hopping (CBH) model below 443 K and the small polaron tunneling (SPT) model above 443 K.     

Preparation of cube micrometer potassium niobate (KNbO3) by hydrothermal method and sonocatalytic degradation of organic dye

Cube micrometer potassium niobate (KNbO₃) powder, as a high effective sonocatalyst, was prepared using hydrothermal method, and then, was characterized by X-ray diffractometer (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX). In order to evaluate the sonocatalytic activity of prepared KNbO₃ powder, the sonocatalytic degradation of some organic dyes was studied. In addition, some influencing factors such as heat-treatment temperature and heat-treatment time on the sonocatalytic activity of prepared KNbO₃ powder and catalyst added amount and ultrasonic irradiation time on the sonocatalytic degradation efficiency were examined by using UV–visible spectrophotometer and Total Organic Carbon (TOC) determination. The experimental results showed that the best sonocatalytic degradation ratio (69.23%) of organic dyes could be obtained when the conditions of 5.00 mg/L initial concentration, 1.00 g/L prepared KNbO₃ powder (heat-treated at 400 °C for 60 min) added amount, 5.00 h ultrasonic irradiation (40 kHz frequency and 300 W output power), 100 mL total volume and 25–28 °C temperature were adopted. Therefore, the micrometer KNbO₃ powder could be considered as an effective sonocatalyst for treating non- or low-transparent organic wastewaters.     

Impedance spectroscopic studies of an organic semiconductor device incorporating a thin film of highly doped ZnPc with MoO3

We use experimental results of low signal impedance spectroscopy to investigate the conduction mechanism in organic semiconductor, zinc phthalocyanine (ZnPc). The first 10 nm, of a total of 150 nm thermally deposited ZnPc, was doped with molybdenum oxide (MoO₃) by co-evaporation to obtain a 20% doping concentration. The ac electrical parameters were measured at room temperature in the dc bias and frequency ranges of 0–5 V and 100 Hz–0.1 MHz, respectively. The variation of bulk resistance with applied bias presents a clear indication of space charge limited conduction in the fabricated device. The experimental results show a strong frequency dependence of capacitance and loss tangent at low frequencies and high applied bias, while at higher frequencies and low applied bias a weak dependence is observed. Moreover, the ac conductivity shows a strong dependence on frequency and is found to vary as ω^s with the index s≤1.15 suggesting a dominant hopping mechanism of conduction.     

Microstructure and dielectric properties of Li2CO3 doped 0.7(Ba,Sr)TiO3–0.3MgO ceramics

Microstructure and dielectric properties of Li₂CO₃ doped 0.7(Ba,Sr)TiO₃–0.3MgO ceramics for the low temperature sintering and microwave applications will be presented. In these days, low temperature sintering process has been widely spread out for the integrated electronic modules for the communication systems such as front-end modules, antenna modules, and switching modules. We have added Li₂CO₃ and MgO to (Ba,Sr)TiO₃ material to reduce the sintering temperature and improve dielectric properties such as loss tangent, and frequency dispersion.In this paper, we have discussed the crystalline properties, dielectric properties, and the microstructures of Li₂CO₃ doped 0.7(Ba,Sr)TiO₃–0.3MgO ceramics. No pyro phase was observed in the X-ray diffraction method. Very weak frequency dispersion (<0.7%) of dielectric permittivity was observed from the 1 kHz to 1 MHz range. We found that the grain size of BST is around 2 μm, while the grain size of Li₂CO₃ dope 0.7BST–0.3MgO is around 4 μm from the SEM analysis.     

Electrical conductivity and dielectric properties of sulfamic acid doped polyaniline

The temperature and frequency dependence of dielectric constant (ε′) and dielectric loss (ε″) is studied for different samples of polyaniline (PANI), doped with different concentration of sulfamic acid in the frequency range (10–100 kHz) and temperature range (300–400 K). The dc conductivity has also been measured to see the effect of sulfamic acid and the conduction mechanism has been explained by the propagation of polaron through a conjugated polymer chain due to shifting of double bonds (alternation), which gives rise to electrical conduction.     

Magnetic and dielectric study of Bi2CuO4

Magnetic and dielectric properties have been investigated for Bi₂CuO₄, which has the same chemical formula as that of the parent materials of cuprate superconductors R₂CuO₄ (R: rare earths). Magnetization measurements show the antiferromagnetic transition of the Cu²⁺ spins at ～42 K, as reported previously. Dielectric measurements for the frequencies of 1 kHz to 1 MHz show that the dielectric constants are 100–500 at room temperature. The dielectric dispersion reveals that the dielectric response lacks spatial coherence, a property which indicates the possible existence of phase separation as suggested for La₂CuO₄. The imaginary part of dielectric response gives the activation energy of 0.22 eV, suggesting that the dielectric response is governed by the electron hopping between the Cu ions.     

Influence of Sr substitution on thermoelectric properties of La1−xSrxFeO3 ceramics

Perovskite La_1−xSr_xFeO₃ (0.10 ⩽ x ⩽ 0.20) ceramics have been synthesized by the conventional solid-state reaction technique. Their electrical resistivity, Seebeck coefficient and thermal conductivity have been measured. It has been found that the increase of Sr content reduces significantly both the electrical resistivity and the Seebeck coefficient, but slightly increases the high-temperature thermal conductivity. An adiabatic hopping conduction mechanism of small polaron is suggested from the analysis of the temperature dependence of the electrical resistivity. Seebeck coefficients decrease with increasing temperature, and saturate at temperature above 573 K. The saturated value of Seebeck coefficient decreases with increasing of Sr contents, from 200 μV/K for x = 0.10 to 100 μV/K for x = 0.20. All samples exhibit lower thermal conductivity with values around 2.6 W/m K. The highest dimensionless figure of merit is 0.031 at temperature 973 K in La_0.88Sr_0.12FeO₃.     

Impedance and Modulus studies of the solid electrolyte system 20CdI2–80[xAg2O–y(0.7V2O5–0.3B2O3)], where 1 ≤x/y ≤ 3

In the present work, an evaluation of the transport properties of super ion conducting quaternary system 20CdI₂–80[xAg₂O–y(0.7V₂O₅–0.3B₂O₃)], where 1 ≤ x/y ≤ 3, in steps of 0.25, to study the effect of changing the modifier to former ratio on the conduction phenomena has been undertaken. Electrical conductivity measurements were made using complex impedance method. The electrical conductivity and conductivity relaxation of the system were studied in the temperature range from 303 K to 333 K and in the frequency range from 100 Hz to 10 MHz. The highest conductivity at room temperature is obtained for the system with modifier to former ratio 1.75. Impedance and modulus analyses had indicated the temperature independent distribution of relaxation times and the non-Debye behavior in these materials. The co-operative motion due to strong coupling between the mobile Ag⁺ ions is assumed to give rise to non-Debye type of relaxation. The silver ionic transport number (t_Ag+) obtained by the emf technique suggested the occurrence of silver ion conduction in the CdI₂-doped Ag₂O–V₂O₅–B₂O₃ system.     

Inclusion of polyaniline in electrodeposited bismuth sulphide thin films: Synthesis and characterization

Structural, electrical and optical properties of polyaniline (PAni) doped Bi₂S₃ composite thin films prepared by electrodeposition method are reported. X-ray diffraction pattern indicates its polycrystalline nature and crystallite size increases with increase in the concentration of PAni. FTIR studies reveal that the dopant PAni has affected the absorption phenomenon in the IR region of the Bi₂S₃ thin films. The optical band gap energy is found to be 1.91 eV for as-deposited Bi₂S₃ thin film and it decreases with increase in the concentration of PAni. The morphology of the doped films changes due to the addition of PAni. Electrical studies indicate that the conductivity increases with increase in the concentration of PAni. The conduction results from a hopping due to localized states in the temperature range 300–358 K. Above 358 K, the conduction process is explained by the traps at grain boundaries of partially depleted grains.     

Optical,electrical and magnetic properties of nanostructured Mn3O4 synthesized through a facile chemical route

Nanostructured Mn₃O₄ sample with an average crystallite size of ∼15 nm is synthesized via the reduction of potassium permanganate using hydrazine. The average particle size obtained from the Transmission Electron Microscopy analysis is in good agreement with the average crystallite size estimated from X-ray diffraction analysis. The presence of Mn⁴⁺ ions at the octahedral sites is inferred from the results of Raman, UV–visible absorption and X-ray photoelectron spectroscopy analyzes. DC electrical conductivity of the sample in the temperature range 313–423 K, is about five orders of magnitude larger than that reported for single crystalline Mn₃O₄ sample. The dominant conduction mechanism is identified to be of the polaronic hopping of holes between cations in the octahedral sites. The zero field cooled and field cooled magnetization of the sample is studied in the range 20–300 K. The Curie temperature for the sample is about 45 K, below which the sample is ferrimagnetic. A blocking temperature of 35 K is observed in the field cooled curve. It is observed that the sample shows hysteresis at temperatures below the Curie temperature with no saturation, even at an applied field (20 kOe). The presence of an ordered core and disordered surface of spin arrangements is observed from the magnetization studies. Above the Curie temperature, the sample shows linear dependence of magnetization on applied field with no hysteresis characteristic of paramagnetic phase.     

The interfacial effect on ionic conduction of AgI–anatase TiO2 composites

AgI–anatase TiO₂ nanoparticle composites, (x)AgI–(1 ? x)anatase, with different porosities were fabricated over a wide range of 0–1 of AgI content. The electrical conductivity was measured at room temperature as function of AgI content (x) and porosity (p). The conductivity varies considerably with both x and p. In the vicinity of x = 0.4 and p = 0.31, the conductivity attains a maximum (2.5 × 10^? 3 S/cm). The conductivity is enhanced by three orders of magnitude in comparison with that of pristine AgI. The mechanism of the observed conductivity enhancement is discussed in the light of the scanning electron microscope images and X-ray diffraction patterns of the different (x)AgI–(1 ? x)anatase composites.     

Dielectric relaxation and ac conductivity study of Ba(Sr1/3Nb2/3)O3

Single phase perovskite Ba(Sr_1/3Nb_2/3)O₃ ceramics was prepared using the columbite precursor method. X-ray diffraction (XRD) technique is used to verify the single phase formation. It stabilizes in hexagonal phase with lattice constants a=12.1243 Å and c=15.3747 Å. Impedance analysis shows distributed relaxation time. Single semicircular arc observed in complex impedance plot confirms that only semiconducting grains are contributing to the polarization. The scaling behavior of both Z″ and M″ infers that the dynamical processes are temperature independent. Comparison of the impedance and electrical modulus data shows that the bulk response has contributions from both localized, i.e. defect relaxation, and non-localized conduction, i.e. ionic or electronic conductivity. The ac conductivity of the ceramics at higher temperatures indicates NTCR (negative temperature coefficient of resistance) behavior like semiconductors. The ac conduction activation energies are estimated from Arrhenius plots and conduction is largely due to hopping process.