Impedance spectroscopic studies of an organic semiconductor device incorporating a thin film of highly doped ZnPc with MoO3 |
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| Authors: | Imran Murtaza Ibrahim Qazi Khasan S Karimov Muhammad H Sayyad |
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| Institution: | 1. Faculty of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi 23640, Pakistan;2. Department of Materials Science and Engineering, Institute of Space Technology, Islamabad 44000, Pakistan;3. Physical Technical Institute of Academy of Sciences, Dushanbe 734025, Tajikistan;1. Organic Thin-Film Solar Cells Group, Photovoltaic Materials Unit, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan;2. Tsukuba Research Center for Interdisciplinary Materials Science (TIMS), Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan;1. Molecular Photoscience Research Center, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501, Japan;2. Organization of Advanced Science and Technology, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501, Japan;1. Department of Physics & Nanotechnology, SRM Institute of Science and Technology, Kattankulathur 603 203, Tamil Nadu, India;2. Department of Semiconductor Science and Technology, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 54896, South Korea;3. Nano-Photonics Convergence Technology Group, Korea Institute of Industrial Technology, Gwangju 61012, South Korea;1. Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, South Korea;2. Department of Organic Material Science and Engineering, Pusan National University, Busan, 46241, South Korea;1. Université de Nantes, MOLTECH-Anjou, UMR 6200, 2 rue de la Houssinière, 44322 Nantes Cedex, France;2. Université de Nantes, Département de Physique, 2 rue de la Houssinière, 44322 Nantes Cedex, France;3. Université de Nantes, Institut des Matériaux Jean Rouxel (IMN), UMR 6502, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3, France;4. LOPCM, CNRST-URAC-14, Université Ibn Tofail, BP 133, Kenitra 14000, Morocco |
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| Abstract: | We use experimental results of low signal impedance spectroscopy to investigate the conduction mechanism in organic semiconductor, zinc phthalocyanine (ZnPc). The first 10 nm, of a total of 150 nm thermally deposited ZnPc, was doped with molybdenum oxide (MoO3) by co-evaporation to obtain a 20% doping concentration. The ac electrical parameters were measured at room temperature in the dc bias and frequency ranges of 0–5 V and 100 Hz–0.1 MHz, respectively. The variation of bulk resistance with applied bias presents a clear indication of space charge limited conduction in the fabricated device. The experimental results show a strong frequency dependence of capacitance and loss tangent at low frequencies and high applied bias, while at higher frequencies and low applied bias a weak dependence is observed. Moreover, the ac conductivity shows a strong dependence on frequency and is found to vary as ωs with the index s≤1.15 suggesting a dominant hopping mechanism of conduction. |
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