Electron scattering from 70Ge and 72Ge

Cross sections have been measured for the elastic and inelastic scattering of electrons from ⁷⁰Ge and ⁷²Ge for momentum transfers from 0.65 to 1.14 fm^?1. Values for the parameters of a Fermi type ground-state charge distribution were obtained from a phase shift analysis of the elastic cross sections. The rms charge radius corresponding to these parameters is 4.07±0.02 fm for ⁷⁰Ge and 4.05±0.03 fm for ⁷²Ge. Using DWBA analysis the reduced transition probabilities for the electroexcitation of the 2₁⁺ and 3₁^? states were found to be: B(E2, ω)↑ = 19.7±1.2, 26.8±2.0 W.u.; B(E3, ω)↑ = 36±5, 37±7 W.u. for ⁷⁰Ge and ⁷²Ge respectively. The J^π = 3^? assignments for the state at 2.562 MeV in ⁷⁰Ge and 2.515 MeV in ⁷²Ge are confirmed.     

锗团簇Ge65, Ge70, Ge75的稳定结构及其电子结构性质

将两种全局结构搜索方法(压缩液态法、遗传算法)与锗的紧束缚势模 型相互结合, 对Ge₆₅, Ge₇₀, Ge₇₅的稳定结构进行了大规模的搜寻,提 出能量较低的可能结构, 然后进一步利用第一性原理方法对这些低能结构进行精确 的优化计算, 确定出了这三种尺寸团簇的基态结构. 发现这三种团簇各具有两种稳定的并且能量相近的异构体: 类球形和类椭球形, 这与实验上报道的大尺寸团簇Ge_n (65 ≤ n ≤ 80) 的结构特征相符合. 简要地分析了这三种团簇基态结构的电子性质. 关键词： 锗团簇 紧束缚势 遗传算法 压缩液态法     

Regrowth kinetics of amorphous Ge layers created by 74Ge and 28Si implantation of Ge crystals

Epitaxial regrowth of ion-implanted amorphous Ge on the underlying crystal substrate occurs between 300 to 400°C with an activation energy of 2.0 eV and a rate of 100Å/min on <100> Ge at 350°C. The regrowth rate is strongly dependent on the orientation of the underlying Ge crystal. The regrowth behavior of amorphous Ge is similar to that of implanted amorphous Si.     

Magnetoluminescence of Ge/Ge1−x Six heterostructures

This paper reports on the first investigation made of luminescence of Ge/Ge_1−x Si_x heterostructures at liquid-helium temperatures in a magnetic field of up to 14 T. The luminescence lines observed in the spectra are due to both free and impurity bound excitons in Ge layers. The diamagnetic shift of the quasi-two-dimensional exciton has been measured. From the experimental data the size of the exciton has been estimated to be 75–90 Å. Zh. éksp. Teor. Fiz. 114, 619–627 (August 1998)     

Phonons in Ge/Si superlattices with Ge quantum dots

Ge/Si superlattices containing Ge quantum dots were prepared by molecular beam epitaxy and studied by resonant Raman scattering. It is shown that these structures possess vibrational properties of both two-and zero-dimensional objects. The folded acoustic phonons observed in the low-frequency region of the spectrum (up to 15th order) are typical for planar superlattices. The acoustic phonon lines overlap with a broad emission continuum that is due to the violation of the wave-vector conservation law by the quantum dots. An analysis of the Ge and Ge-Si optical phonons indicates that the Ge quantum dots are pseudoamorphous and that mixing of the Ge and Si atoms is insignificant. The longitudinal optical phonons undergo a low-frequency shift upon increasing laser excitation energy (2.54–2.71 eV) because of the confinement effect in small-sized quantum dots, which dominate resonant Raman scattering.     

Ellipsometry studies of Si/Ge superlattices with embedded Ge dots

In this paper, we present an analysis for treating the spectroscopic ellipsometry response of Si/Ge superlattices (SLs) with embedded Ge dots. Spectroscopic ellipsometry (SE) measurement at room temperature was used to investigate optical and electronic properties of Si/Ge SLs which were grown on silicon (Si) wafers having 〈111〉 crystallographic orientation. The results of the SE analysis between 200 nm and 1000 nm indicate that the SL system can effectively be described using an interdiffusion/intermixing model by assuming multicrystalline Si and Si_1?x Ge _x intermixing layers. The electronic transitions deduced from the analysis reveal Si-, Ge- and alloying-related critical energy points.     

Compton profile study of V3Ge and Cr3Ge

In this paper the results of a Compton profile study of two polycrystalline A15 compounds, namely, V₃Ge and Cr₃Ge, have been reported. The measurements have been performed using 59.54 keV γ-rays from an ²⁴¹Am source. The theoretical Compton profiles have been computed for both the compounds using ab-initio linear combination of atomic orbitals (LCAO) method employing CRYSTAL98. For both the A15 compounds, the isotropic experimental profiles are found to be in good overall agreement with the calculations. The comparison points out residual differences in V₃Ge whereas for Cr₃Ge the differences are within experimental error. The behaviour of valence electrons in the two iso-structural compounds has been examined on the scale of Fermi momentum. The valence electron distribution seems to be dominated by the metallic constituents rather than Ge and two compounds show covalent nature of bonding which is larger in V₃Ge compared to Cr₃Ge.      

Ge/Au,Ge/Ag双层膜和Ge-Au,Ge-Ag合金膜中非晶Ge的晶化

本文对Ge/An,Ge/Ag,双层膜和Ge-An,Ge-Ag合金膜的退火过程进行了透射电子显微镜观测,对Ge/多晶Au(或Ag)还进行了加热过程的原位观测。观测表明,多晶Au和单晶Au膜的存在使非晶Ge的晶化温度T_c的下降显著不同,可由晶界三叉点等处为非晶Ge的有利形核位置来解释,双层膜的缩聚区中由于局域优先晶化的影响,不仅T_c(=100℃)比非缩聚区中(T_c=150℃)低,而且形成直径为1—2μm的Ge大晶粒,而Ge/多晶Ag和Ge/单晶Ag膜的T_c均约为280℃,合金膜中金属含量较低时(C_Au<17at％,C_Ag<18at％),T_c高于相应的Ge/多晶Au(Ag)膜;金属含量较高时,T_c低于Ge/多晶Au(Ag)膜。这说明过饱和金属原子的存在使得非晶Ge的晶化势垒大大降低。 关键词：     

Quasimolecular K X-ray excitation by bombardment of Ge atoms with Ge ions

By bombardment of Ge targets with ⁷⁴₃₂Ge⁵⁺ of 81 MeV, a continuous X-ray intensity distribution has been obtained, which ranges up to the K X-ray energies of ₆₄Gd. The shape of the spectra, corrected for the detector efficiency, confirms the assumption that this continuum is caused by K X-rays of Z = 64 quasimolecules, which are transiently formed during the adiabatic heavy-ion collision. The yield of quasimolecular radiation was determined to be about 4 x 10⁻⁵ X-rays per beam K-vacancy.     

Folded acoustic phonons in Si/Ge superlattices with Ge quantum dots

The spectra of Raman scattering by folded acoustic phonons in Si/Ge superlattices with pseudomorphic layers of Ge quantum dots (QDs) grown by low-temperature (T = 250°C) molecular beam epitaxy are studied. New features of the folded phonon lines related to the resonant enhancement and unusual intensity ratio of the doublet lines that cannot be explained by the existing theory have been observed. The observed modes are shown to be related to the vibrations localized to the QDs and induced by the folded phonons of the Si spacer layers. The calculations performed in the model of a one-dimensional chain of atoms have allowed the nature of the localization of acoustic phonons attributable to a modification of the phonon spectrum of a thin QD layer to be explained. The observed intensity ratio of the folded phonon doublet lines is caused by asymmetry of the relief of the QD layers.     

Raman scattering in annealed isotopic ( Ge) ( Ge) superlattices

Raman scattering by optical phonons is used to study the interface intermixing in isotopic ( Ge) ( Ge) thin superlattices, with and equal to 8, 12, 16 and 24 atomic monolayers, for annealling at C and various times. The experimental results compares very well with theoretical calculations within the planar force constant model and the bond polarizability approach. The diffusion is simulated by a combination of the virtual crystal approximation and the solution of the Fick’s diffusion equation for the superlattice geometry.     

Ferromagnetic properties of cyclically deformed Fe3Ge and Ni3Ge

The magnetisation behaviour of cyclically deformed and non-deformed Fe₃Ge and Ni₃Ge is examined at sufficiently low temperatures below the Curie point. Despite these two intermetallics having the same L1₂ structure, they are found to show quite different behaviour in their ferromagnetic properties; the spontaneous magnetisation (M _S) remains unaffected in the former whereas it decreases notably in the latter after cyclic deformation. The origin of the difference is investigated and attributed to the difference in operative shear planes. These are mainly on {001} planes without the introduction of notable amounts of anti-phase boundary (APB) tubes in Fe₃Ge and mainly on {111} planes with the introduction of a high density of APB tubes composed of {111} APBs in Ni₃Ge. The effects of cyclic deformation on the high-field susceptibility?χ?and the coercive force (H _C) are also discussed by taking into account the dislocation distributions introduced by the {001} and {111} slips.     

Structure of69Ge

The beta decay of⁶⁹As is reinvestigated. Its decay half-life is measured to be 15.1±0.3 m. Using beta, gamma and conversion electron spectroscopy techniques, a decay scheme comprising 68 transitions among 28 excited states in⁶⁹Ge is proposed. Spin-parity assignments are made to many states andB(M1) andB(E2) are deduced for some transitions. The structure thus obtained for⁶⁹Ge is compared with that from other works and discussed in the light of nuclear models.     

Effects of X-rays on the electrophysical properties of Ge and Ge p-n junctions

Russian Physics Journal -     

Luminescence properties of Ge implanted SiO2:Ge and GeO2:Ge films

We have investigated cathodeluminescence (CL) of Ge implanted SiO₂:Ge and GeO₂:Ge films. The GeO₂ films were grown by oxidation of Ge substrate at 550 °C for 3 h in O₂ gas flow. The GeO₂ films on Ge substrate and SiO₂ films on Si substrate were implanted with Ge-negative ions. The implanted Ge atom concentrations in the films were ranging from 0.1 to 6.0 at%. To produce Ge nanoparticles the SiO₂:Ge films were thermally annealed at various temperatures of 600-900 °C for 1 h in N₂ gas flow. An XPS analysis has shown that the implanted Ge atoms were partly oxidized. CL was observed at wavelengths around 400 nm from the GeO₂ films before and after Ge⁻-implantation as well as from SiO₂:Ge films. After Ge⁻-implantation of about 0.5 at% the CL intensity has increased by about four times. However, the CL intensity from the GeO₂:Ge films was several orders of magnitude smaller than the intensity from the 800 °C-annealed SiO₂:Ge films with 0.5 at% of Ge atomic concentration. These results suggested that the luminescence was generated due to oxidation of Ge nanoparticles in the SiO₂:Ge films.