Diode-pumped continuous-wave Nd:YLF laser at 1313 nm

We present an efficiency Nd:LiYF₄ (Nd:YLF) laser operating at 1313 nm pumped directly into the emitting level ⁴ F _3/2. At the incident pump power of 10.3 W, as high as 3.1 W of continuous-wave output power at 1313 nm is achieved. The slope efficiency with respect to the incident pump power was 36.1%. To the best of our knowledge, this is the first demonstration of such a laser system. Comparative results obtained for the pump with diode laser at 806 nm, into the highly absorbing ⁴ F _5/2 level, are given in order to prove the advantages of the 880 nm wavelength pumping.     

High-efficiency direct-pumped Nd:YLF laser operating at 1321 nm

We present a high-efficiency Nd: LiYF₄ (Nd:YLF) laser operating at 1321 nm pumped directly into the emitting level, ⁴F_3/2. The linear polarization of the pump diode laser was maintained by a short fiber. At the absorbed pump power of 7.3 W, as high as 3.6 W of continuous-wave output power at 1321 nm is achieved. The slope efficiency with respect to the absorbed pump power was 0.52. To the best of our knowledge, this is the first demonstration of such a laser system. Comparative results obtained for the pump with a diode laser at 806 nm, into the highly absorbing ⁴F_5/2 level, are given in order to prove the advantages of 880 nm wavelength pumping.     

All solid-state continuous-wave Nd:YAG laser at 1319 and 659.5 nm under direct 885 nm pumping

The continuous-wave high efficiency laser emission of Nd:YAG at the fundamental wavelength of 1319 nm and its 659.5-nm second harmonic obtained by intracavity frequency doubling with an LBO nonlinear crystal is investigated under pumping by diode laser at 885 nm (on the ⁴ F _3/2 → ⁴ I _13/2 transition). An end-pumped Nd:YAG crystal yielded 9.1 W at 1319 nm of continuous-wave output power for 18.2 W of absorbed pump power. The slope efficiency with respect to the absorbed pump power is 0.55. Furthermore, 5.2 W 659.5 nm red light is acquired by frequency doubling, resulting in an optical-to-optical efficiency with respect to the absorbed pump power of 0.286. Comparative results obtained for the pump with diode laser at 808 nm (on the ⁴ F _5/2 → ⁴ I _13/2 transition) are given in order to prove the advantages of the 885 nm wavelength pumping.     

Highly efficient Nd:GdVO4/BiBO laser at 456 nm under direct 880 nm diode laser pumping

The continuous-wave high-efficiency laser emission of Nd:GdVO₄ at the second-harmonic of 456 nm obtained by intracavity frequency doubling with an BiB₃O₆(BiBO) nonlinear crystal is investigated under pumping by diode laser at 880 nm into emitting level ⁴F_3/2. About 3.8 W at 456 nm with M² = 1.4 was obtained from a 5 mm-thick 0.4 at.% Nd:GdVO₄ laser medium and a 12 mm-long BiBO nonlinear crystal in a Z-type cavity for 13.9 W absorbed pump power. An optical-to-optical efficiency with respect to the absorbed pump power was 0.274. Comparative results obtained for the pump with diode laser at 808 nm, into the highly-absorbing ⁴F_5/2 level, are given in order to prove the advantages of the 880 nm wavelength pumping.     

Highly efficient continuous-wave intracavity frequency-doubled Nd:YVO4-LBO laser at 457 nm under diode pumping into the emitting level 4F3/2

The continuous-wave high efficiency laser emission of Nd:YVO₄ at the fundamental wavelength of 914 nm and its 457 nm second harmonic obtained by intracavity frequency doubling with an LBO nonlinear crystal is investigated under pumping by diode laser at 880 nm into emitting level ⁴F_3/2. 6.5 W at 457 nm with M ²=1.8 was obtained from a 5-mm-thick 0.4 at.% Nd:YVO₄ laser medium and a 15-mm-long LBO nonlinear crystal in a Z-type cavity for 18.6 W absorbed pump power. An optical-to-optical efficiency with respect to the absorbed pump power was 0.35. Comparative results obtained for the pump with diode laser at 808 nm, into the highly-absorbing level ⁴F_5/2, are given in order to prove the advantages of the 880 nm wavelength pumping.     

Efficient intracavity frequency-doubled Nd:YLiF<Subscript>4</Subscript>-LiB<Subscript>3</Subscript>O<Subscript>6</Subscript> red laser emission under diode pumping into the emitting level

We report for the first time (to our knowledge) an efficient compact red laser at 660.5 nm generation by intracavity frequency doubling of a continuous wave laser operation of a diode direct pumped Nd:YLiF₄ (Nd:YLF) laser on the ⁴ F _3/2 → ⁴ I _13/2 transition at 1321 nm. A LiB₃O₆ (LBO) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an absorbed pump power of 16.2 W, as high as 1.5 W of continuous wave output power at 660.5 nm is achieved with 10-mm-long LBO. The optical-to-optical conversion efficiency is up to 9.3%. Comparative results obtained for the pump with diode laser at 806 nm, into the highly-absorbing ⁴ F _5/2 level, are given in order to prove the advantages of the 880 nm wavelength pumping.     

Highly efficient intracavity frequency-doubled Nd:GdVO4-LBO red laser at 670 nm under direct 880 nm pumping

We report the efficient compact red laser at 670 nm generation by intracavity frequency doubling of a continuous wave laser operation of a diode direct pumped Nd:GdVO₄ laser on the ⁴ F _3/2 → ⁴ I _13/2 transition at 1340 nm. An LBO crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an absorbed pump power of 16.2 W, as high as 5.1 W of continuous wave output power at 670 nm is achieved with 15-mm-long LBO. The optical-to-optical conversion efficiency is up to 0.31, and the fluctuation of the red output power was better than 3.0% in the given 30 min. Comparative results obtained for the pump with diode laser at 808 nm, into the highly-absorbing ⁴ F _5/2 level, are given in order to prove the advantages of the 880 nm wavelength pumping.     

All solid-state continuous-wave intracavity frequency-doubled Nd:LuVO<Subscript>4</Subscript>-LBO red laser at 671.5 nm

We report for the first time a efficient compact red laser at 671.5 nm generation by intracavity frequency doubling of a continuous wave laser operation of a diode direct pumped Nd:LuVO₄ laser on the ⁴ F _3/2 → ⁴ I _13/2 transition at 1343 nm. An LBO crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an absorbed pump power of 16.2 W, as high as 4.3 W of continuous wave output power at 671.5 nm is achieved with 10-mm-long LBO. Comparative results obtained for the pump with diode laser at 808 nm, into the highly-absorbing ⁴ F _5/2 level, are given in order to prove the advantages of the 880 nm wavelength pumping.     

High-efficiency direct-pumped Nd:YVO4-LBO laser operating at 671 nm

The continuous-wave high-efficiency laser emission from Nd:YVO₄ at the fundamental wavelength of 1342 nm and its 671 nm second harmonic obtained by intra-cavity frequency doubling in an LBO nonlinear crystal are investigated under pumping by diode laser at 880 nm (on the ⁴F_3/2→⁴I_13/2 transition). The end-pumped Nd:YVO₄ crystal yielded a continuous-wave output power of 9.6 W at 1342 nm for 18.9 W of absorbed pump power. The slope efficiency measured with respect to the absorbed pump power is 60%. An output of 5.5 W at 671 nm was obtained by frequency doubling, resulting in an optical-to-optical efficiency with respect to the absorbed pump power of 29%. Comparative results obtained for the pump with a diode laser at 808 nm (on the ⁴F_5/2→⁴I_13/2 transition) are given in order to prove the advantages of the 880 nm wavelength pumping.     

Continuous-wave Nd:GdVO<Subscript>4</Subscript>/LBO laser at 541.5 nm under diode pumping into the emitting level

We report a green laser at 541.5 nm generation by intracavity frequency doubling of a continuous wave (cw) laser operation of a 1083 nm Nd:GdVO₄ laser under 880 nm diode pumping into the emitting level ⁴ F _3/2. A LiB₃O₅ (LBO) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an incident pump power of 17.8 W, as high as 2.52 W of cw output power at 541.5 nm is achieved. The optical-to-optical conversion efficiency is up to 14.2%, and the fluctuation of the green output power was better than 3.6% in the given 30 min.     

Continuous-wave Nd:YVO4/KTiOPO4 green laser at 542 nm under diode pumping into the emitting level

We report a green laser at 542 nm generation by intracavity frequency doubling of a continuous wave (CW) laser operation of a 1086 nm Nd:YVO₄ laser under 880 nm diode pumping into the emitting level ⁴ F _3/2. A KTiOPO₄ (KTP) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an incident pump power of 14.5 W, as high as 1.33 W of CW output power at 542 nm is achieved. The optical-to-optical conversion efficiency is up to 9.2%, and the fluctuation of the green output power was better than 3.8% in the given 30 min.     

Continuous-wave high-power multi-pass pumped thin-disc Nd:GdVO4 laser

A thin-disc Nd:GdVO₄ laser in multi-pass pumping scheme was developed. Continuous-wave output power of 13.9 W at 1.06 μm for an absorbed power at 808 nm of 22 W was demonstrated from a 250-μm thick, 0.5-at.% Nd:GdVO₄ in a 4-pass pumping; the slope efficiency in absorbed power was 0.65, or 0.47 in input power. Output performances were also investigated under diode laser pumping at 879 nm, directly into the emitting ⁴F_3/2 level: maximum power of 3.6 W was obtained at 6.2 W of absorbed power with 0.69 slope efficiency. Compared with pumping at 808 nm, into the highly absorbing ⁴F_5/2 level, improvements of laser parameter in absorbed power (increase of slope efficiency, decrease of threshold) were obtained, showing the advantages of the pumping into the emitting level. However, the laser performances expressed vs. the incident power were modest owing to the low absorption efficiency at 879 nm. Thus, increased number of passes of the medium would be necessary in order to match the performances in input power obtained under 808-nm pumping.     

High-efficiency Nd:YVO4 laser emission under direct pumping at 880 nm

We report a high-efficiency Nd:YVO₄ laser pumped by an all-solid-state Q-switched Ti:Sapphire laser at 880 nm in this paper. Output power at 1064 nm with different-doped Nd:YVO₄ crystals of 0.4-, 1.0- and 3.0-at.% under the 880 nm pumping was measured, respectively. Comparative results obtained by the traditional pumping at 808 nm into the highly absorbing ⁴F_5/2 level were presented, showing that the slope efficiency and the threshold with respect to the absorbed pump power of the 1.0-at.% Nd:YVO₄ laser under the 880 nm pumping was 17.5% higher and 11.5% lower than those of 808 nm pumping. In a 4-mm-thick, 1.0-at.% Nd:YVO₄ crystal, a high slope efficiency of 75% was achieved under the 880 nm pumping, with an optical-to-optical conversion efficiency of 52.4%.     

Quasi-three-level Nd:YVO<Subscript>4</Subscript> laser operation at 914 nm under 879 nm diode laser pumping

We present experimental investigation on quasi-three-level Nd:YVO₄ laser operation at 914 nm under 879 nm diode pumping directly into emitting level. A maximal output power of 3.0 W under an absorbed pump power of 13.4 W was got, corresponding to an optical conversion efficiency of 22.4% and a slope efficiency of 40.3%. To the best of our knowledge, this is the first report on a Nd:YVO₄ laser at 914 nm using rod-type single crystal as the gain medium and end pumped by diode directly into the emitting level.     

Efficient 1047 nm CW laser emission of Nd:YLF under direct pumping into the emitting level

We demonstrate a 1047 nm Nd:LiYF₄ (Nd:YLF) laser by directly pumping into the upper lasing level with a tunable Ti:Sapphire laser. The results obtained for direct upper laser level pumping at 863, 872 and 880 nm of Nd:YLF were compared with traditional 806 nm pump band excitation. Highly efficient 1047 nm continuous-wave (CW) laser emission under direct pumping at 880 nm in an 8 mm thick, 1.0 at.% Nd:YLF crystal is obtained. The slope efficiency is improved from 55.6% for traditional pumping at 806 nm to 76.3% for direct pumping at 880 nm.     

Diode-pumped Yb:Y<Subscript>2</Subscript>SiO<Subscript>5</Subscript>-LiB<Subscript>3</Subscript>O<Subscript>5</Subscript> cyan laser at 501.7 nm

We describe the output performances of the 928 nm ⁴ F _3/2 → ⁴ I _9/2 transition in Nd:CLNGG under diode-laser pumping. An end-pumped Nd:CLNGG crystal yielded 1.3 W of continuous-wave output power for 17.8 W of absorbed pump power. The slope efficiency with respect to the absorbed pump power was 11.2%. Furthermore, with 17.8 W of diode pump power and the frequency-doubling crystal LiB₃O₅ (LBO), a maximum output power of 260 mW in the blue spectral range at 464 nm has been achieved. The blue output power stability over 4 h is better than 3.2%.     

Thermally-boosted pumping of Nd:LiYF<Subscript>4</Subscript> using Ti:Sapphire laser

We report for the first time (to our knowledge) a 1053 nm Nd:LiYF₄ (Nd:YLF) laser by directly pumping into the upper lasing level with a tunable Ti:sapphire laser. The results obtained for direct upper laser level pumping at 872 and 880 nm of Nd:YLF were compared with traditional 806 nm pump band excitation. Highly efficient 1053 nm continuous-wave (CW) laser emission under direct pumping at 880 nm in an 8 mm thick, 1.0 at % Nd:YLF crystal is obtained. The slope efficiency is improved from 39.1% for traditional pumping at 806 nm to 63.9% for direct pumping at 880 nm.     

Diode-pumped quasi-three-level Nd:CLNGG laser at 928 nm

We describe the output performances of the 928 nm ⁴ F _3/2 → ⁴ I _9/2 transition in Nd:CLNGG under diode-laser pumping. An end-pumped Nd:CLNGG crystal yielded 1.3 W of continuous-wave output power for 17.8 W of absorbed pump power. The slope efficiency with respect to the absorbed pump power was 11.2%. Furthermore, with 17.8 W of diode pump power and the frequency-doubling crystal LiB₃O₅ (LBO), a maximum output power of 260 mW in the blue spectral range at 464 nm has been achieved. The blue output power stability over 4 h is better than 3.2%.     

Eye-safe Raman laser at 1532 nm with BaWO<Subscript>4</Subscript> crystal under direct 880 nm pumping

A highly efficient 880 nm laser diode pumped actively Q-switched Nd:YVO₄/BaWO₄ eye-safe Raman laser is demonstrated. With an absorbed pump power of 10.9 W, 1.7 W of average output power at the Stokes wave-length is generated at a PRF of 40 kHz, corresponding to a diode-to-Stokes conversion efficiency of 15.6%.     

880 nm laser-diode end-pumped Nd:YVO<Subscript>4</Subscript> slab laser at 1342 nm

43.6 W near-diffraction-limited continuous-wave laser beam at 1342 nm in 880 nm laser-diode partially end-pumped Nd:YVO₄ slab laser is presented. The slope efficiency and optical-to-optical efficiency with respect to absorbed pumping power were 45.4% and 35.9%, respectively. At output power of 34.5 W, the M ² factors in unstable and stable directions were 1.3 and 1.2, respectively.