Vanadium Nitride Films Formed by Rapid Thermal Processing (RTP): Depth Profiles and Interface Reactions Studied by Complementary Analytical Techniques

The nitridation of vanadium films in molecular nitrogen and ammonia using a RTP‐system was investigated. The V films were deposited on silicon substrates covered by 100 nm thermal SiO₂. For a few experiments sapphire substrates were used. Nitride formation at high temperatures (900 and 1100 °C) and interface reactions and diffusion of oxygen out of the SiO₂‐layer into the metal lattice at moderate temperatures (600 and 700 °C) were studied. For characterisation complementary analytical methods were used: X‐ray diffraction (XRD) for phase analysis, secondary neutral mass spectrometry (SNMS) and Rutherford Backscattering (RBS) for acquisition of depth profiles of V, N, O, C and Si, transmission electron microscopy (TEM) in combination with electron energy filtering for imaging element distributions (EFTEM) and recording electron energy loss spectra (EELS) to obtain detailed information about the initial stages of nitride, oxide and oxynitride formation, respectively, and the microstructure and element distributions of the films. In these experiments the SiO₂‐layer acts as diffusion barrier for nitrogen and source for oxygen causing the formation of substoichiometric vanadium oxides and oxynitrides near the V/SiO₂‐interface primarily at temperatures ≤ 900 °C. At a temperature of 1100 °C just a small amount of oxynitride forms near the interface because rapid diffusion of nitrogen and fast formation of VN (diffusion barrier for oxygen) inhibit the outdiffusion of oxygen into the metal layer. In the 600 °C regime, in argon atmosphere oxynitride phases observed in the surface region of these films originate from reaction of residual oxygen in the argon gas, whereas NH₃ as process gas does not lead to oxide or oxynitride formation at the surface (apart from the oxidation caused by storage). NH₃ seems to support the diffusion of oxygen out of the SiO₂‐layer. During the decomposition of ammonia at higher temperatures hydrogen is formed, which could attack the SiO₂. In contrast, sapphire substrates do not act as oxygen source in the 600 °C regime and change the nitridation behaviour of the vanadium films.     

Essais en autoclave de flacons de verre a usage pharmaceutique

The behaviour in autoclave testing (French Pharmacopoeia) of bottles made from borosilicate glass (class I), surface-treated soda-lime glass (class II) and untreated sodalime glass (class III) is compared. Several (6–10) elements were determined by wet-chemical methods in the autoclave solutions. The results are compared with surface data obtained by secondary-ion mass spectrometry (SIMS) before and after the autoclaving. The SIMS profiles show that autoclaving of class I and II glasses scarcely modifies the surfaces of these glasses whereas class III glass is attacked to a depth of ca. 40 nm. The surface treatment with ammonium sulphate is shown to be efficient in reducing the diffusion of ions from the glass surface to the leaching solution. The validity of the hydrolytic resistance test given in the French Pharmacopoeia is confirmed.     

Oxidation and nitridation of niobium films by rapid thermal processing

The oxidation and nitridation processes of niobium films in a rapid thermal processing (RTP) – system were investigated. 200 and 500 nm niobium films were deposited via sputtering on sapphire-(1-102)-substrate. At first niobium films were oxidized in molecular oxygen at temperatures ranging from 350 to 500 °C and for times of 1, 2 and 5 min and then nitridated in ammonia at 1000 °C for 1 min using an RTP system. For characterisation of the niobium films complementary analytical methods were used: X-ray diffraction (XRD) for phase analysis, secondary ion mass spectrometry (SIMS) for determining the elemental depth profiles of the films, scanning electron microscopy (SEM) and atomic force microscopy (AFM) for characterisation of the surface morphology of the films. The influence of the substrate, single crystalline sapphire, on the reactivity of the niobium films was studied in dependence of temperature, time of reaction and film thickness. The possibility of existence of niobium oxynitride phase was investigated. According to XRD and SIMS data, there is evidence that an oxynitride phase is formed after oxidation and subsequent nitridation in the bulk of some Nb films. In some of the experiments crack formation in the films or even delamination of the Nb films from the substrates was observed.     

Layered molybdenum oxide thin films electrodeposited from sodium citrate electrolyte solution

Molybdenum oxide thin films were prepared electrochemically onto the selenium predeposited tin oxide-coated glass substrates using 0.22 M sodium citrate (C₆H₅Na₃O₇) solution (pH 8.3) and sodium molybdate as a precursor. Cyclic voltammetry was used to determine the deposition potential effects on molybdenum compound speciation, while quantitative thin film composition was obtained from X-ray photoelectron spectroscopy depth profiles. Thin molybdenum film growth and composition was potential dependant. Predominant molybdenum species was Mo(IV) at all deposition potentials and deposition times. Optical properties of the molybdenum oxide thin films were determined using UV–VIS spectroscopy. The absorption edge varied between 560 and 650 nm, whereas optical band gap values—between 1.79 and 2.19 eV—well within the limits for solar light-induced chemical reactions.     

Niobium nitride films formed by rapid thermal processing (RTP): a study of depth profiles and interface reactions by complementary analytical techniques

The nitridation of niobium films approximately 250 and 650 nm thick by rapid thermal processing (RTP) at 800 °C in molecular nitrogen or ammonia was investigated. The niobium films were deposited by electron beam evaporation on silicon substrates covered by a 100 or 300 nm thick thermally grown SiO₂ layer. In these investigations the reactivity of ammonia and molecular nitrogen was compared with regard to nitride formation and reaction with the SiO₂ substrate layer. The phases formed were characterized by X-ray diffraction (XRD). Depth profiles of the elements in the films were recorded by use of secondary neutral mass spectrometry (SNMS). Microstructure and spatial distribution of the elements were imaged by transmission electron microscopy (TEM) and energy-filtered TEM (EFTEM). Electron energy loss spectra (EELS) were taken at selected positions to discriminate between different nitride, oxynitride, and oxide phases. The results provide clear evidence of the expected higher reactivity of ammonia in nitride formation and reaction with the SiO₂ substrate layer. Outdiffusion of oxygen into the niobium film and indiffusion of nitrogen from the surface of the film result in the formation of oxynitride in a zone adjacent to the Nb/SiO₂ interface. SNMS profiles of nitrogen reveal a distinct tail which is attributed to enhanced diffusion of nitrogen along grain boundaries.     

Improving the oxidation resistance of AlCrN coatings by tailoring chromium out-diffusion

In this work, we have studied the improvement on the oxidation resistance of AlCrN-based coatings by adding a subsurface titanium nitride barrier layer. Since oxidation is interrelated with the inward diffusion of oxygen into the surface of Al_xCr_1−xN (x = 0.70) coatings and the outward diffusion of Cr to the surface, the oxidation behaviour of the aluminium-rich AlCrN coatings can be tuned by designing the coating in an appropriate layered structure. The buried depth of the embedded layer and the oxidation time were varied, and the changes in the AlCrN/TiN depth composition profiles and surface oxidation stoichiometry were analysed by means of Glow Discharge Optical Emission Spectroscopy (GDOES) and Cross Sectional SEM (X-SEM) maps. It was observed that when a TiN diffusion barrier of 300 nm was deposited near the top surface (500 nm from the surface) the inhibition of the inward diffusion of oxygen and formation of beneficial alumina surface layers was promoted and consequently an increase of the oxidation resistance is achieved. This is explained in terms of a limited surplus of chromium from the coating to the surface. This was corroborated after performing experiments using CrN as embedded barrier layer which resulted in a continuous surplus of chromium to the surface and the formation of Cr-rich oxides. GDOES, in combination with X-SEM elemental maps, was proved to be a fast and accurate technique to monitor composition in-depth changes during oxidation, providing unique information regarding the oxide structure formation.     

Analysis of corrosion layers on protective coatings and high temperature materials in simulated service environments of modern power plants using SNMS,SIMS, SEM,TEM, RBS and X-ray diffraction studies

In three different examples, the effects of the oxidation behaviour as well as the microstructural stability of high temperature materials and protective coatings was determined by combining the results of kinetic studies with extensive analytical investigations using, among other techniques, SNMS, SIMS, SEM, TEM, Rutherford back scattering (RBS) as well as X-ray diffraction. 1). The effect of water vapour on the oxidation behaviour of 9% Cr steels in simulated combustion gases has been determined. The effects of O2 and H2O content on the oxidation behaviour of 9% Cr steel in the temperature range 600-800 degrees C showed that in dry oxygen a protective scale was formed with an oxidation rate controlled by diffusion in the protective scale. In the presence of water vapour, after an incubation period, the scales became non-protective as a result of a change in the oxidation limiting process. The destruction of the protective scale by water vapour does not only depend on H2O content but also on the H2O/O2-ratio. 2). The increase of component surface temperature in modern gas turbines leads to an enhanced oxidation attack of the blade coating. Improvements in corrosion resistance and longer lifetime thermal barrier coatings in gas turbines have been achieved by improvement of the high temperature properties of MCrAlY coatings by additions of minor alloying elements such as yttrium, silicon and titanium. 3). The use of oxide dispersion strengthened (ODS) alloys provides excellent creep resistance up to much higher temperatures than can be achieved with conventional wrought or cast alloys in combination with suitable high temperature oxidation/corrosion resistance. Investigation of the growth mechanisms of protective chromia and alumina scales were examined by a two-stage oxidation method with 18O tracer. The distribution of the oxygen isotopes in the oxide scale was determined by SIMS and SNMS. The results show the positive influence of a Y2O3 dispersion on the oxidation resistance of the ODS alloys and its effect on growth mechanisms.     

Time‐of‐flight secondary ion mass spectroscopic characterization of the nitrogen profile of shallow gate oxynitride thermally grown on a silicon substrate

Silicon oxynitride has been used as a shallow gate oxide material for microelectronics and its thickness has been reduced over the years to only a few tens of angstroms due to device size scaling. The nitride distribution and density characteristic in the gate oxide thus becomes imperative for the devices. The shallow depth profiling capability using time‐of‐flight secondary ion mass spectrometry (TOF‐SIMS) has huge potential for the nitrogen characterization of the shallow gate oxide film. In this article, both positive and negative spectra of TOF‐SIMS on silicon oxynitride have been extensively studied and it was found that the silicon nitride clusters Si_xN^? (x = 1–4) are able to represent the nitrogen profiles because their ion yields are high enough, especially for the low‐level nitride doping in the oxide, which is formed by the annealing of nitric oxide on SiO₂/Si. The gate oxide thickness measured by the TOF‐SIMS profiling method using ¹⁸O or CsO profile calibration was found to correlate very well with transmission electron microscope measurement. The nitrogen concentration in the gate oxide measured using the TOF‐SIMS method was consistent with the results obtained using the dynamic SIMS method, which is currently applied to relatively thicker oxynitride films. Copyright © 2012 John Wiley & Sons, Ltd.     

Surface analysis of sol-gel coatings on glass by secondary neutral mass spectrometry

Secondary neutral mass spectrometry (SNMS) has been used to profile coatings of the systems SiO₂ and 65SiO₂.20TiO₂.15ZrO₂ (STZ). The coatings have been deposited on float glass and heat insulating glass by dip coating from alkoxide solutions. The microporous gel coatings have been densified by heat treatment. The SBM method (separate bombardment mode) has been applied to characterize the systems and the HFM method (high frequency mode) to check for matrix effects in the SBM depth profiles. Both methods show sodium diffusion from the float glass substrate into the STZ coating and no significant sodium diffusion into the SiO₂ coating. Measurements of the coatings on the heat insulating glass indicate that the SnO₂ interlayer acts as a diffusion barrier. The diffusion of sodium from the float glass substrate into the STZ coating during consolidation has been analyzed by SBM-SNMS. The sputtering rate decreases with increasing consolidation. Due to large differences between sputtering rates of the substrate and of the microporous coatings, the calibration of sodium intensities from time to depth at the interface has not been possible. However, a correlation between the final temperature of heat treatment and the depth of the Na₂O depletion in the substrate surface under the coating can be obtained.     

Quantitative Sputter Depth Profiling of Silicon- and Aluminium Oxynitride Films

 Silicon- and aluminium oxynitride films have gained attention because of their interesting properties in various fields of technology. The specific properties strongly depend on the concentration of oxygen and nitrogen in the films. For the quantitative analysis of homogeneous silicon- and aluminium oxynitride films, EPMA has been proven a very reliable and precise method of analysis. In order to characterise films with graded composition or interface effects between the film and the substrate it is necessary to use sputter depth profiling techniques such as SIMS, hf-SNMS, AES, or hf-GD-OES. Unfortunately, stoichiometric silicon- and aluminium oxynitride films are insulating and therefore charge compensation has to be applied. For the quantification it was necessary to prepare calibration samples which have been analysed by different bulk analytical techniques such as NRA, RBS and EPMA. With these calibration samples, sensitivity factors have been determined and the functional dependence of the sensitivity factors on the composition has been derived. The advantages and disadvantages of the different sputtering techniques and the applicability of the obtained sensitivity functions for the quantitative depth profiling of silicon- and aluminium oxynitride films are discussed.     

Moisture uptake of a polycarbonate blend exposed to hygrothermal aging

As an extension of an earlier study on aging of a polycarbonate/acrylonitrile-butadiene-styrene (PC/ABS) blend, this paper has explored the roles of two competing phenomena, physical aging and moisture diffusion, during hygrothermal aging. Moisture absorption experiments at four different relative humidity conditions were compared with full immersion condition. Uptake curves show two different diffusion behaviour including Fickian moisture absorption and anomalous peak overshoot. The equilibrium moisture uptake in the polymer system, the coefficient of diffusion of moisture and the dual glass transitions were characterized. In general, the uptake behaviour could be explained using free volume expansion and contraction concepts that are associated with diffusion and structural recovery theories, respectively. However, using statistical methods, it was found that the relationship between the effects of aging temperature and relative humidity is both complex and interactive, with either diffusion or relaxation processes dominating depending on the extent of hygrothermal exposure.     

SIMS Profiling and TEM of CVD Films on Multi-Filament Samples

 A suitable fibre coating is essential to obtain optimal fibre-matrix interaction in fibre-strengthened composite materials. Thin films (∼100 nm) of silicon carbide, turbostratic carbon, and boron nitride were deposited by CVD as single or double layers on commercial multi-filament fibres in a continuous process. The fibre material itself may be carbon, alumina, silicon carbide, or a quaternary ceramic of SiCBN. The application of MCs⁺-SIMS enables one to determine the composition (including impurities of H and O) of various fibre coating materials with an accuracy of at least 20% relative. Due to the special geometry of the multi-filament samples the depth resolution of the SIMS depth profiles is limited, nevertheless, layered structures and some details of the interface between coating and fibre can be studied. The depth calibration of the SIMS depth profiles is derived from sputter rates established on flat samples with a composition similar to that of the fibre coating material. However, the obtained film thicknesses are not extremely different from the values derived from TEM on cross sections of coated fibres.     

Depth profiling in secondary ion mass spectrometry for ultra‐thin layer with nanometer order thickness by mesa‐structure fabrication

We attempted to make an accurate depth profiling in secondary ion mass spectrometry (SIMS) including backside SIMS for ultra‐thin nanometer order layer. The depth profiles for HfO₂ layers that were 3 and 5 nm thick in a‐Si/HfO₂/Si were measured using quadrupole and magnetic sector type SIMS instruments. The depth profiling for an ultra‐thin layer with a high depth resolution strongly depends on how the crater‐edge and knock‐on effects can be properly reduced. Therefore, it is important to control the analyzing conditions, such as the primary ion energy, the beam focusing size, the incidence angle, the rastered area, and detected area to reduce these effects. The crater‐edge effect was significantly reduced by fabricating the sample into a mesa‐shaped structure using a photolithography technique. The knock‐on effect will be serious when the depth of the layer of interest from the surface is located within the depth of the ion mixing region due to the penetration of the primary ions. Finally, we were able to separately assign the origin of the distortion to the crater‐edge effect and knock‐on effect. Copyright © 2012 John Wiley & Sons, Ltd.     

Study of the near‐surface of hot‐ and cold‐rolled AlMg0.5 aluminium alloy

Rolling is known to alter the surface properties of aluminium alloys and to introduce disturbed near‐surface microcrystalline layers. The near‐surfaces of mostly higher alloyed materials were investigated by various techniques, often combined with a study of their electrochemical behaviour. Cross‐sectional transmission electron microscopy (TEM), after ion milling or ultramicrotomy, indicated the presence of disturbed layers characterized by a refined grain structure, rolled‐in oxide particles and a fine distribution of intermetallics. Those rolled‐in oxide particles reduce the total reflectance of rolled Al alloys. Furthermore, various depth profiling techniques, such as AES, XPS, SIMS and qualitative glow discharge optical emission spectroscopy (GD‐OES) have been used to study the in‐depth behaviour of specific elements of rolled Al alloys. Here, the surface and near‐surface of AlMg0.5 (a commercially pure rolled Al alloy with addition of 0.5 wt.% Mg) after hot and cold rolling, and with and without additional annealing is studied with complementary analytical techniques. Focused ion beam thinning is introduced as a new method for preparing cross‐sectional TEM specimens of Al surfaces. Analytical cross‐sectional TEM is used to investigate the microstructure and composition. Measuring the total reflectance of progressively etched samples is used as an optical depth profiling method to derive the thickness of disturbed near‐surface layers. Quantitative r.f. GD‐OES depth profiling is introduced to study the in‐depth behaviour of alloying elements, as well as the incorporation of impurity elements within the disturbed layer. The GD‐OES depth profiles, total reflectance and cross‐sectional TEM analyses are correlated with SEM/energy‐dispersive x‐ray observations in GD‐OES craters. Copyright © 2005 John Wiley & Sons, Ltd.     

Development of a dielectric barrier discharge ion source for ambient mass spectrometry

A new ion source based on dielectric barrier discharge was developed as an alternative ionization source for ambient mass spectrometry. The dielectric barrier discharge ionization source, termed as DBDI herein, was composed of a copper sheet electrode, a discharge electrode, and a piece of glass slide in between as dielectric barrier as well as sample plate. Stable low-temperature plasma was formed between the tip of the discharge electrode and the surface of glass slide when an alternating voltage was applied between the electrodes. Analytes deposited on the surface of the glass slide were desorbed and ionized by the plasma and the ions were introduced to the mass spectrometer for mass analysis. The capability of this new ambient ion source was demonstrated with the analysis of 20 amino acids, which were deposited on the glass slide separately. Protonated molecular ions of [M + H](+) were observed for all the amino acids except for L-arginine. This ion source was also used for a rapid discrimination of L-valine, L-proline, L-serine and L-alanine from their mixture. The limit of detection was 3.5 pmol for L-alanine using single-ion-monitoring (SIM). Relative standard deviation (RSD) was 5.78% for 17.5 nmol of L-alanine (n = 5). With the advantages of small size, simple configuration and ease operation at ambient conditions, the dielectric barrier discharge ion source would potentially be coupled to portable mass spectrometers.     

Surface-enhanced Raman spectroscopy based on conical holed enhancing substrates

In this contribution, surface-enhanced Raman spectroscopy (SERS) based on conical holed glass substrates deposited with silver colloids was reported for the first time. It combines the advantages of both dry SERS assays based on plane films deposited with silver colloids and wet SERS assays utilizing cuvettes or capillary tubes. Compared with plane glass substrates deposited with silver colloids, the conical holed glass substrates deposited with silver colloids exhibited five-to ten-folds of increase in the rate of signal enhancement, due to the internal multiple reflections of both the excitation laser beam and the Raman scattering photons within conical holes. The application of conical holed glass substrates could also yield significantly stronger and more reproducible SERS signals than SERS assays utilizing capillary tubes to sample the mixture of silver colloids and the solution of the analyte of interest. The conical holed glass substrates in combination with the multiplicative effects model for surface-enhanced Raman spectroscopy (MEM_SERS) achieved quite sensitive and precise quantification of 6-mercaptopurine in complex plasma samples with an average relative prediction error of about 4% and a limit of detection of about 0.02 μM using a portable i-Raman 785H spectrometer. It is reasonable to expect that SERS technique based on conical holed enhancing substrates in combination with MEM_SERS model can be developed and extended to other application areas such as drug detection, environmental monitoring, and clinic analysis, etc.     

Analytical investigations of tunnel magnetoresistance layers

The basic elements of tunnel magnetoresists are two magnetic layers separated by an insulating barrier layer. The uniformity of this only 1–2 nm thick barrier layer up to dot edges and the chemical composition of the layers are properties important for the efficiency of tunnel magnetoresistance devices. These key-properties have been investigated by analytical TEM methods like high resolution TEM imaging and energy-filtered imaging. With regard to the chemical composition the TEM results have been confirmed by XPS investigations. The subsequent oxidation of the barrier is one of the most critical steps of the deposition procedure of the layer stacks. An undersized oxygen dose leads to an incomplete oxidation of the barrier layer with uncontrollable tunnel behaviour. An overdose of oxygen leads to oxygen diffusion in the layers beneath the barrier and uncontrollable magnetic hardness of the lower magnetic electrode.     

Development of Na+-sensitive membranes based on sputtered Na-Al-Si glasses

Na⁺-sensitive microdevices are of increasing interest for integration in microanalytical systems e.g. for biomedical applications or for industrial process control. In order to produce ultra thin Na⁺-sensitive layers with fixed and reproducible composition and, in particular, defined Na concentration by means of RF sputtering, an off-axis geometry of a magnetron with cylindrical target was chosen for minimizing back-sputtering effects from the already deposited material. With this inverted cylindrical magnetron (ICM) it was possible to obtain reproducible and controllable sodium aluminosilicate glass layers on semiconductor substrates. Several surface and thin layer analytical techniques were applied for characterization of the membranes and for stoichiometry control. Especially by the non-destructive nuclear reaction analysis method a constant Na profile throughout the glass layer and — together with AES depth profiles — the diffusion barrier effect of an Si₃N₄ interface layer could be verified. Electrochemical measurements proved Nernstian sensitivity down to 10^–4 M Na⁺ in solutions of pH 7, supporting sufficient stability and reproducibility of the sputtered Na⁺-sensitive layers.     

Oxynitride perovskite LaTiOxNy thin films deposited by reactive sputtering

This paper reports on the first study of structural and optical properties of reactively RF-sputtered lanthanum titanium oxynitride thin films using an original oxynitride LaTiO₂N target and an argon–nitrogen mixture as reactive plasma. The depositions were carried out by varying the process parameters such as RF power, total pressure, argon and nitrogen rates and substrate temperature. Wavelength dispersive spectrometry (WDS), X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV–visible spectroscopy show that titanate lanthanum oxynitride compounds can exist as a domain composition, LaTiO_xN_y. Films prepared in pure argon are oxide films, transparent, amorphous and insulating. Polycrystalline and [001]-textured oxynitride thin films, with different nitrogen contents, can be deposited on SrTiO₃ substrates, depending on the sputtering conditions. As expected, the introduction of nitrogen in the coatings leads to a band gap narrowing. Oxynitrides' thin films are thus coloured and semiconductive.     

ToF-secondary ion mass-spectrometric study of copper deposition and stripping on directly heated screen-printed gold electrodes

We report about a new kind of directly heated gold electrode. All electrodes including a directly heated gold loop electrode, a Ag pseudo reference, and a carbon counter electrode have been screen-printed on a ceramic alumina substrate. Thermal behaviour was studied by potentiometry using either an external or the integrated reference electrode. Stripping voltammetric copper signals were greatly improved at elevated deposition temperature. Secondary ion mass spectrometric studies (ToF-SIMS) revealed that different negative ionic species of copper complexes can be found on the gold electrode surface as a result of ion bombardment during SIMS analysis like Cu^?, CuCl^? and CuCl₂ ^?. SIMS surface imaging using a fine focussed ion beam over the surface allowed us to obtain ion images (chemical maps) of the analyzed sample. SIMS depth profile analysis of the gold loop electrode was performed after copper deposition at room temperature (23 °C) and at 60 °C. CuCl₂ ^? ion was used for the depth profile studies as it has shown the highest intensity among other observed species. Surface spectroscopic analysis, surface imaging and depth profile analysis have shown that the amount of deposited copper species on the gold loop electrode was increased upon increasing electrode temperature during the deposition step. Therefore, the presence of chloride in the solution will hinder underpotential deposition of Cu(0) and lead to badly defined and resolved stripping peaks.