Thermodynamic modeling of the ZrO2–YO1.5 system

In the present work, an optimized set of Gibbs energy functions is proposed for the Y–Zr–O ternary system. We focus on the ZrO₂–YO_1.5 quasi-binary system, but reoptimizations of the Zr–O and Y–O binary systems are included as well. The parameters for the Y–Zr binary system were taken from a previous assessment.

The ZrO₂–YO_1.5 system was treated as a quasi-binary section of the Y–Zr–O ternary system. The existing experimental data on the ZrO₂–YO_1.5 system were carefully reviewed. The related parameters were optimized using both thermodynamic data and phase diagram data. A calculated phase diagram of the ZrO₂–YO_1.5 system is presented. Our optimization agrees well with most experimental data. Two calculated isothermal sections of the Y–Zr–O system at 1500 and 2000 K are also included.     

Binding energies of elements at the interface between oxygen-ion-irradiated ZrO2–Y2O3 films and an iron substrate

Binding energies of elements at the interface of oxygen-ion-irradiated ZrO₂–Y₂O₃ films on an iron substrate were investigated by using X-ray photoelectron spectroscopy (XPS) combined with ion etching. In addition to Zr or Fe simple binary suboxides, it is found that some Zr–O–Fe-like bonding configuration is formed due to ion irradiation, which has a favorable effect on the adhesion of the film to the substrate.     

Effects of precursors on nucleation in atomic layer deposition of HfO2

Atomic layer deposition of hafnium dioxide (HfO₂) on silicon substrates was studied. It was revealed that due to low adsorption probability of HfCl₄ on silicon substrates at higher temperatures (450–600 °C) the growth was non-uniform and markedly hindered in the initial stage of the HfCl₄–H₂O process. In the HfI₄–H₂O and HfI₄–O₂ processes, uniform growth with acceptable rate was obtained from the beginning of deposition. As a result, the HfI₄–H₂O and HfI₄–O₂ processes allowed deposition of smoother, more homogeneous and denser films than the HfCl₄–H₂O process did. The crystal structure developed, however, faster at the beginning of the HfCl₄–H₂O process.     

Evidence for bicarbonate formation on vacuum annealed TiO2(110) resulting from a precursor-mediated interaction between CO2 and H2O

The reaction of CO₂ and H₂O to form bicarbonate (HCO⁻₃) was examined on the nearly perfect and vacuum annealed surfaces of TiO₂(110) with temperature programmed desorption (TPD), static secondary ion mass spectrometry (SSIMS) and high resolution electron energy loss spectrometry (HREELS). The vacuum annealed TiO₂(110) surface possesses oxygen vacancy sites that are manifested in electronic EELS by a loss feature at 0.75 V. These oxygen vacancy sites bind CO₂ only slightly more strongly (TPD peak at 166 K) than do the five-coordinated Ti⁴⁺ sites (TPD peak at 137 K) typical of the nearly perfect TiO₂(110) surface. Vibrational HREELS indicates that CO₂ is linearly bound at the latter sites with a ν_a(OCO) frequency similar to the gas phase value. In contrast, oxygen vacancies dissociate H₂O to bridging OH groups which recombine to liberate H₂O in TPD at 490 K. No evidence for a reaction between CO₂ and H₂O is detected on the nearly perfect surface. In sequentially dosed experiments on the vacuum annealed surface at 110 K, CO₂ adsorption is blocked by the presence of preadsorbed H₂O, adsorbed CO₂ is displaced by postdosed H₂O, and there is little or no evidence for bicarbonate formation in either case. However, when CO₂ and H₂O are simultaneously dosed, a new CO₂ TPD state is observed at 213 K, and the 166 K state associated with CO₂ at the vacancies is absent. SSIMS was used to tentatively assign the 213 K CO₂ TPD state to a bicarbonate species. The 213 K CO₂ TPD state is not formed if the vacancy sites are filled with OH groups prior to simultaneous CO₂+H₂O exposure. Sticking coefficient measurements suggest that CO₂ adsorption at 110 K is precursor-mediated, as is known to be the case for H₂O adsorption on TiO₂(110). A model explaining the circumstances under which the proposed bicarbonate species is formed involves the surface catalyzed conversion of a precursor-bound H₂O–CO₂ van der Waals complex to carbonic acid, which then reacts at unoccupied oxygen vacancies to generate bicarbonate, but falls apart to CO₂ and H₂O in the absence of these sites. This model is consistent with the conditions under which bicarbonate is formed on powdered TiO₂, and is similar to the mechanism by which water catalyzes carbonic acid formation in aqueous solution.     

Competing thermal relaxation processes in response to intrinsic defects produced by exposing SiO2 to synchrotron radiation

Irradiation of SiO₂ with soft X-ray photons (hν>100 eV) produces a variety of defects, of which E₁′ centers and neutral Si–Si bonds are mainly responsible for the dielectric response change. The thermal processes that modify the structures around the defect sites have been investigated by in situ spectroscopic ellipsometry. Annealing the irradiated SiO₂ film diminishes the number of defects which are assigned to E₁′ centers by about half. The competing channels for annihilation of E₁′ centers are the recovery of the Si–O–Si bonding configuration and, in the opposite direction, the decomposition of the material into volatile products until the network is completely restructured. The other half of the defects are converted to Si–Si bond units and precipitates as nanocrystalline particles of Si.     

The stability of SiC coating and SiO2/SiC multilayer on the surface of graphite for HTGRs at normal service condition

The stability of SiC coating in helium with a low concentration of O₂, CO₂, and H₂O is a key factor for their application in improvement of oxidation resistance of graphite for high temperature gas-cooled reactors (HTGRs). Through thermodynamic analysis, it is found that the influence factor controlling the critical temperature of passive oxidation for SiC is partial pressure of active gas in helium; the critical temperature of passive oxidation for SiC increases with the partial pressure of O₂, CO₂, and H₂O, SiC is prone to undergo active oxidation in He–CO₂ and He–H₂O system. SiO₂/SiC multilayer coating can improve the oxidation resistance of graphite at higher temperature than SiC coating does under normal operation condition for HTGRs.     

Surface reactions in atomic layer deposition of HfO2, ZrO2 and Al2O3 on hydroxylated and sulfur-passivated GaAs(1 0 0) surfaces: A comparative study by density functional theory

The surface reactions in atomic layer deposition (ALD) of HfO₂, ZrO₂ and Al₂O₃ on hydroxylated and sulfur-passivated GaAs surfaces are compared by using density functional theory. The HfCl₄ and ZrCl₄ half-reactions show large similarities in energetics and geometrical structure. However, both of them show large discrepancies with the Al(CH₃)₃ (TMA) half-reaction. Calculations find that it is more energetically favorable for the Al₂O₃ deposition than the HfO₂ and ZrO₂ deposition at the initial ALD stage. In addition, calculations find that although the GaAs passivation with sulfur helps to improve the interfacial properties, it is both kinetically and thermodynamically less favorable.     

Reversible H2 passivation of Si ≡ Si3 interface defects in (1 1 1)Si/SiO2

K-band electron spin resonance (ESR) at 4.3 K has revealed the dipole-dipole (DD) interaction effects between [1 1 1]P_b centers (^*Si ≡ Si₃ defects with unpaired sp³ hybrid [1 1 1]) at the 2 dimensional (1 1 1)Si/SiO₂ interface. This has been enabled by the perfectly reversible H₂ passivation of P_b, which affects the defect's spin state. Sequential hydrogenation at 253–353°C and degassing treatments in high vacuum at 743–835°C allowed to vary the P_b density in the range 5 × 10¹⁰ < [P_b] (1.14 ± 0.06) × 10¹³ cm^-2. With increasing [P_b] fine structure doublets are clearly resolved. It is found that (1 1 1)Si/SiO₂ interfaces, dry thermally grown at ≈920°C, naturally comprise a ^*Si ≡ Si₃ defect density — passivated or not — of 1.14 × 10¹³ cm^-2.     

Electrical conductivity and defect structure of Mg-doped Cr2O3

The electrical conductivity of Cr₂O₃ nominally doped with 2 mol% MgO has been studied by the four point a.c. technique as a function of the oxygen activity (O₂ + Ar, CO + CO₂ and H₂ + H₂O) in the temperature range 400–1200 °C. It is concluded that Cr₂O₃ doped with MgO is an extrinsic conductor and that the dissolved Mg-dopant is compensated by the formation of electron holes at near atmospheric oxygen pressures and by oxygen vacancies (or possibly interstitial chromium ions) at highly reduced oxygen activities (in CO + CO₂ and H₂ + H₂O gas mixtures). In H₂ + H₂O mixtures Mg-doped chromia also dissolves hydrogen as protons and significantly affects the defect structure and electrical conductivity. The defect structure of the oxide under various conditions is discussed.     

光学玻璃基底原子层同质材料沉积薄膜光谱及激光诱导损伤特性研究

通过原子层沉积技术在熔石英玻璃表面制备了同质材料的单层SiO₂薄膜,对光学薄膜的物理化学性质和强激光辐照下的激光诱导损伤性能进行了深入研究。实验中采用双叔丁基氨基硅烷（BTBAS）和臭氧（O₃）作为反应前驱体,在熔石英光学元件表面进行了SiO₂薄膜的原子层沉积工艺研究,以不同沉积温度条件制备了一系列膜样品。首先对原子层沉积特性和薄膜均匀性展开了研究,发现薄膜生长厚度与沉积循环次数之间符合线性生长规律,验证了制备薄膜的原子级逐层生长特性,并且表面沉积膜层的均匀性很好,其测得膜厚波动不超过2%。然后针对不同温度条件下沉积的SiO₂薄膜,对其粗糙度及各类光谱特性展开了研究,对比结果表明：样品的表面粗糙度在镀膜后有轻微的降低;薄膜样品在200～1 000 nm范围内具有出色的透过率,均超过90%并逐渐趋近于93.3%,且其透射光谱与在裸露熔石英衬底上测得的光谱没有明显差异;镀膜前后荧光光谱和傅里叶变换红外光谱的差异证实了原子层沉积SiO₂膜中点缺陷（非桥键氧、氧空位、羟基等）的存在,这将会影响薄膜耐损伤性能。最后对衬底和膜样品进行了紫外激光诱导损伤测试,损伤阈值的变化表明熔石英元件表面沉积薄膜后的激光损伤性能有所降低,其零概率损伤阈值从31.8 J·cm-2减小到20 J·cm-2左右,与光谱缺陷情况表征相符合。薄膜中点缺陷部位会吸收紫外激光能量,导致局域温度升高,进而出现激光诱导损伤现象并降低抗激光损伤阈值。在选定的沉积温度范围内,较高温度条件下沉积的SiO₂薄膜其激光诱导损伤性能更好,可以控制沉积温度条件使得元件的抗损伤性能更为接近衬底本身,后续有望通过其他反应参数的优化来获得薄膜抗损伤性能的进一步提升。     

The adsorption of H2O on TiO2 and SnO2(110) studied by first-principles calculations

First-principles calculations based on density functional theory and the pseudopotential method have been used to investigate the energetics of H₂O adsorption on the (110) surface of TiO₂ and SnO₂. Full relaxation of all atomic positions is performed on slab systems with periodic boundary conditions, and cases of full and half coverage are studied. Both molecular and dissociative (H₂O→OH⁻+H⁻) adsorption are treated, and allowance is made for relaxation of the adsorbed species to unsymmetrica configurations. It is found that for both TiO₂ and SnO₂ an unsymmetrical dissociated configuration is the most stable. The symmetrical molecularly adsorbed configuration is unstable with respect to lowering of symmetry, and is separated from the fully dissociated configuration by at most a very small energy barrier. The calculated dissociative adsorption energies for TiO₂ and SnO₂ are in reasonable agreement with the results of thermal desorption experiments. Calculated total and local electronic densities of states for dissociatively and molecularly adsorbed configurations are presented, and their relation with experimental UPS spectra is discussed.     

基于Ni电极和ZrO_2/SiO_2/ZrO_2介质的MIM电容的导电机理研究

研究了基于Ni电极和原子层淀积的ZrO_2/SiO_2/ZrO_2对称叠层介质金属-绝缘体-金属(MIM)电容的电学性能.当叠层介质的厚度固定在14nm时,随着SiO_2层厚度从0增加到2nm,所得电容密度从13.1 fF/μm~2逐渐减小到9.3fF/μm~2,耗散因子从0.025逐渐减小到0.02.比较MIM电容的电流-电压(I-V)曲线,发现在高压下电流密度随着SiO_2厚度的增加而减小,在低压下电流密度的变化不明显,还观察到电容在正、负偏压下表现出完全不同的导电特性,在正偏压下表现出不同的高、低场I-V特性,而在负偏压下则以单一的I-V特性为主导.进一步对该电容在高、低场下以及电子顶部和底部注入时的导电机理进行了研究.结果表明,当电子从底部注入时,在高场和低场下分别表现出普尔-法兰克(PF)发射和陷阱辅助隧穿(TAT)的导电机理;当电子从顶部注入时,在高、低场下均表现出TAT导电机理.主要原因在于底电极Ni与ZrO_2之间存在镍的氧化层(NiO_x),且ZrO_2介质层中含有深浅两种能级陷阱(分别为0.9和2.3 eV),当电子注入的模式和外电场不同时,不同能级的陷阱对电子的传导产生作用.     

Synthesis and characterization of monodispersed CdS nanoparticles in SiO2 fibers by sol–gel method

Cadmium sulfide (CdS) has been synthesized by a sol–gel route in order to obtain chemically protected, stable nanoparticles. The CdS nanoparticles in the SiO₂ gel matrix were dried to form monoliths of 1 in. diameter. The TEOS:H₂O:HCl:C₂H₅OH and TEOS/Cd mole ratios were varied to obtain narrow size distributed CdS nanoparticles. The UV absorption measurements indicated sharp absorption at 260 and 350 nm for different precursor compositions. SiO₂ gel containing the CdS nanoparticles was spin coated onto substrates in order to monitor the surface morphology of the samples. Scanning electron microscope measurements revealed formation of CdS nanoparticles within the branches of gel-network. Depending upon the mole ratio of additives and drying method, fibers or monolithic tablets of CdS nanoparticles could be produced.     

Surface reaction mechanism of Y2O3 atomic layer deposition on the hydroxylated Si(1 0 0)-2 × 1: A density functional theory study

The surface reaction mechanism of Y₂O₃ atomic layer deposition (ALD) on the hydroxylated silicon surface is investigated by using density functional theory. The ALD process is designed into two half-reactions, i.e., Cp₃Y (Cp = cyclopentadienyl) and H₂O half-reactions. For the Cp₃Y half-reaction, the chemisorbed complex is formed along with the change of metal-Cp bonding from Y-C(π) to Y-C₁(σ). For the H₂O half-reactions, the chemisorbed energies are increased with the relief of steric congestion around yttrium metal center. In addition, Gibbs free energy calculations show that it is thermodynamically favorable for the Cp₃Y half-reactions. By comparing with the reaction of H₂O with {Si}-(O₂)YCp, it is thermodynamically more favorable and kinetically less favorable for the reactions of H₂O with {Si}-OYCp₂ as well as with {Si}-OYCp(OH).     

Surfactant-assisted synthesis of defective zirconia mesophases and Pd/ZrO2: Crystalline structure and catalytic properties

Mesoporous zirconia nanophases with structural defects were synthesized by using a surfactant-templated method. Physicochemical properties and crystalline structures of the zirconia nanophases were studied by means of thermogravimetric analysis (TGA), N₂ physosorption isotherm and in situ Fourier transform infrared (FT-IR) spectroscopy, transmission electron microscopy (TEM) and X-ray diffraction (XRD) techniques. The resultant materials show typical mesoporous features which vary with calcination temperature. The cationic surfactant in the network of the solids induces structural deformation and defect creation. The zirconia consists of monoclinic and tetragonal nanophases which contains many structural defects, and its crystalline structure shows microstrain. Both, concentration of lattice defects and degree of the crystal microstrain, decrease as the calcination temperature is increased. When CO is adsorbed on the surface of Pd/ZrO₂, linear bonds of CO–Pd⁰, CO–Pd^δ+ and CO–Zr⁴⁺ are formed, accompanying with CO₂ production. Catalytic evaluation shows that the Pd/ZrO₂ catalyst is very active for CO oxidation and NO reduction. In the case of oxygen absence from reaction mixture, high selectivity to N₂ is achieved without any NO₂ formation. In the oxygen rich condition, CO conversion is enhanced but less than 19% NO₂ is produced. N₂O is formed only in the reducing condition and its selectivity is sensitive to reaction temperature. The possible mechanisms of NO + CO and NO + CO + O₂ reactions over Pd/ZrO₂ catalyst related to reactant dissociation on the Pd metals and to defective structure of the nanozirconia support are discussed.     

B-MQMAS and Si–{B} Double-Resonance NMR Studies on the Structure of Binary B2O3–SiO2 Glasses

Glasses in the system x B₂O₃·(1−x)SiO₂ (0.2≤x≤1.0) were studied using ¹¹B multiple quantum magic angle spinning NMR spectroscopy (MQMAS), ²⁹Si–\{¹¹B\} rotational echo adiabatic passage double-resonance and ²⁹Si–\}¹¹B\{ CP heteronuclear correlation spectroscopy. The results can be quantitatively interpreted in terms of a phase separation of the borosilicate glasses into a virtually SiO₂-free B₂O₃ phase and a mixed borosilicate phase. While the MQMAS spectra allowed the site speciation and resolution of at least two different ¹¹B resonances, attributable to BO_3/2 units consumed in boroxol rings, BO_3/2 units connecting the boroxol rings and BO_3/2 units involved in B–O–Si linkages, the analysis of the double-resonance data further elucidated the structure of the mixed borosilicate phase. The results indicate that only a fraction of 0.48 mol B₂O₃ can be accommodated per mole SiO₂, building a mixed borosilicate network.     

Oxygen diffusion and surface exchange in La1−xSrxFe0.8Cr0.2O3−δ (x=0.2, 0.4 and 0.6)

Oxygen tracer diffusion (D*) and surface exchange rate constant (k*) have been measured, using isotopic exchange and depth profiling by secondary ion mass spectrometry (SIMS), in La_1−xSr_xFe_0.8Cr_0.2O_3−δ (x=0.2, 0.4 and 0.6). Measurements were made as a function of temperature (700–1000 °C) and oxygen partial pressure (0.21–10⁻²¹ atm) in dry oxygen, water vapour and water vapour/hydrogen/nitrogen mixtures. At high oxygen activity, D* was found to increase with increasing temperature and Sr content. The activation energies for D* in air are 2.13 eV (x=0.2), 1.53 eV (x=0.4) and 1.21 eV (x=0.6). As the oxygen activity decreases, D* increases as expected qualitatively from the increase in oxygen vacancy concentration. Under strongly reducing conditions, the measured values of D* at 1000 °C range from 10⁻⁸ cm² s⁻¹ for x=0.2 to 10⁻⁷ cm² s⁻¹ for x=0.4 and 0.6. The activation energies determined at constant H₂O/H₂ ratio are 1.21 eV (x=0.2), 1.59 eV (x=0.4) and 0.82 eV (x=0.6).

The surface exchange rate constant of oxygen for the H₂O molecule is similar in magnitude to that for the O₂ molecule and both increase with increasing Sr concentration.     

Synthesis and characterization of NiMn2O4 nanoparticles using gelatin as organic precursor

Nanoparticles of NiMn₂O₄ were successfully obtained by mixing gelatin and inorganic salts NiCl₂·6H₂O and MnCl₂·4H₂O in aqueous solution. The mixture has been synthesized at different temperatures and resulted in NiMn₂O₄ nanoparticles with crystallites size in the range of 14–44 nm, as inferred from X-ray powder diffraction (XRPD) data. We have also observed that both the average crystallite size and the unit cell parameters increase with increasing synthesis temperature. Magnetic measurements confirmed the presence of a magnetic transition near 110 K.     

TBAB‐CO2水合物形成过程的微观实验

四丁基溴化铵（TBAB）半笼型水合物在二氧化碳（CO₂）捕集和封存技术中具有巨大的发展与应用潜力。由于晶体结构的复杂性,TBAB半笼型水合物的动力学过程尚未得到充分的研究。为了解TBAB半笼型水合物在储气方面的动力学特性,实验采用原位激光拉曼技术和多晶粉末X射线衍射仪（PXRD）对nCO₂·TBAB·26H₂O和nCO₂·TBAB·38H₂O水合物的光谱特征进行了鉴别与分析,利用原位激光拉曼技术考察了CO₂分子分别进入2种晶体结构的动力学过程。研究结果表明,2种晶体结构的拉曼光谱具有较高的相似性,值得注意的是nCO₂·TBAB·26H₂O中位于1 309.5和1 326.9 cm-1的拉曼峰为TBA+阳离子中C-C键的变形振动峰,在nCO₂·TBAB·38H₂O水合物中峰基本不发生改变,但半峰宽降低,峰形也变得相对清晰;同时,nCO₂·TBAB·26H₂O中位于1 446.6和1 458 cm-1的拉曼峰为TBA+阳离子中C-H键的剪切振动峰,在nCO₂·TBAB·38H₂O水合物中分别向左、右两边发生了位移,峰形的重叠度也随之下降。依据上述2处拉曼光谱特征可以对2种晶体结构进行辨别。通过PXRD图谱可以发现2种晶体结构的衍射图谱存在着比较明显的差距。nCO₂·TBAB·26H₂O晶体属于四方晶系,空间群(P4/m),而nCO₂·TBAB·38H₂O属于正交晶系,空间群(Pmma)。图谱中2θ=8.406°和10.941°分别为nCO₂·TBAB·38H₂O的(200)和(220)晶面的特征峰,而2θ=5.976°和6.969°分别为nCO₂·TBAB·26H₂O的(012)和(003)晶面特征峰,可以用来判别样品中水合物的晶体结构。在原位拉曼测量过程中,nCO₂·TBAB·26H₂O和nCO₂·TBAB·38H₂O分别在已经合成好的TBAB·26H₂O和TBAB·38H₂O水合物表面形成。在276 K,2 MPa条件下,气相中的CO₂分子分别进入2种晶体结构中用于储气的512笼形结构,在1 275.4和1 379.3 cm-1处形成特征峰并逐渐增长。实验以2种TBAB水合物位于1 110.3 cm-1的拉曼峰作为参考,比较了CO₂在水合物中的增长速率。研究发现在反应初期的75 min内CO₂在2种水合物中的含量基本保持线性增长且上升速率的差别不大。由于测量点位于水合物表面,受气体在水合物中扩散的阻力较小同时2种TBAB水合物均采用512笼形结构储气导致了储气速率相近。以上的微观晶体结构研究结果对TBAB水合物法捕集和封存CO₂技术应用具有重要的意义。