Manipulating the spin states in a double molecular magnets tunneling junction

We theoretically explore the spin transport through nano-structures consisting of two serially coupled single-molecular magnets (SMM) sandwiched between two nonmagnetic electrodes. We find that the magnetization of SMM can be controlled by the spin transfer torque with respect to the bias voltage direction, and the electron current can be switched on/off in different magnetic structures. Such a manipulation is performed by full electrical manner, and needs neither external magnetic field nor ferromagnetic electrodes in the tunneling junction. The proposal device scheme can be realized with the use of the present technology [6] and has potential applications in molecular spintronics or quantum information processing.     

Bias-controlled spin memory and spin injector scheme in the tunneling junction with a single-molecule magnet

A bias-controlled spin-filter and spin memory is theoretically proposed, which consists of the junction with a singlemolecule magnet sandwiched between the nonmagnetic and ferromagnetic(FM) leads. By applying different voltage pulses Vwriteacross the junction, the spin direction of the single-molecule magnet can be controlled to be parallel or anti-parallel to the magnetization of the FM lead, and the spin direction of SMM can be "read out" either by the magneto-resistance or by the spin current with another series of small voltage pulses V_(probe). It is shown that the polarization of the spin current is extremely high(up to 100%) and can be manipulated by the full-electric manner. This device scheme can be compatible with current technologies and has potential applications in high-density memory devices.     

Berry-phase blockade in single-molecule magnets

We formulate the problem of electron transport through a single-molecule magnet (SMM) in the Coulomb blockade regime taking into account topological interference effects for the tunneling of the large spin of a SMM. The interference originates from spin Berry phases associated with different tunneling paths. We show that, in the case of incoherent spin states, it is essential to place the SMM between oppositely spin-polarized source and drain leads in order to detect the spin tunneling in the stationary current, which exhibits topological zeros as a function of the transverse magnetic field.     

{Cu3}单分子磁体在磁场中的热纠缠

本文研究单分子磁体Na₉[Cu₃Na₃(H₂O)₉ (α-AsW₉O₃₃)₂]·26H₂O中三角自旋 环在磁场作用下的热纠缠性质, 利用数值计算求出任意两个Cu²⁺离子量子比特之间的配对纠缠度, 分别记为C₁₂, C₂₃和C₁₃. 研究结果表明, 磁场的方向和大小以及温度对配对纠缠度具有重要影响, 而且参数的变化对C₁₂, C₂₃和C₁₃的影响也是各不相同. 给出外加三个不同方向的磁场时, 配对纠缠度C₁₂, C₂₃和C₁₃各自对应的临界温度T_c随磁场强度的变化图, 由此可以得到单分子磁体三角自旋环中存在纠缠态的参数范围. 通过选择适当的磁场方向和大小以及温度等实验参数, 可以有效地调节和提高单分子磁体中的配对纠缠度. 关键词： 配对纠缠 单分子磁体 三角自旋环     

Switching spin and charge between edge states in topological insulator constrictions

We show how the coupling between opposite edge states, which overlap in a constriction made of the topological insulator mercury telluride (HgTe), can be employed both for steering the charge flow into different edge modes and for controlled spin switching. Unlike in a conventional spin transistor, the switching does not rely on a tunable Rashba spin-orbit interaction, but on the energy dependence of the edge state wave functions. Based on this mechanism, and supported by extensive numerical transport calculations, we present two different ways to control spin and charge currents, depending on the local gating of the constriction, resulting in a high fidelity spin transistor.     

Spin torque transfer structure with new spin switching configurations

Spin torque transfer structures with new spin switching configurations are proposed, fabricated and investigated in this paper. The non-uniform current-induced magnetization switching is implemented based on both GMR and MTJ nano devices. The proposed new spin transfer structure has a hybrid free layer that consists of a layer with conductive channels (magnetic) and non-conductive matrix (non-magnetic) and traditional free layer(s). Two mechanisms, a higher local current density by nano-current-channels and a non-uniform magnetization switching (reversal domain nucleation and growth) by a magnetic nanocomposite structure, contribute in reducing the switching current density. The critical switching current density for the new spin transfer structure is reduced to one third of the typical value for the normal structure. It can be expected to have one order of magnitude or more reduction for the critical current density if the optimization of materials and fabrication processes could be done further. Meanwhile, the thermal stability of this new spin transfer structure is not degraded, which may solve the long-standing scaling problem for magnetic random access memory (MRAM). This spin transfer structure, with the proposed and demonstrated new spin switching configurations, not only provides a solid approach for the practical application of spin transfer devices but also forms a unique platform for researchers to explore the non-uniform current-induced switching process.     

Effect of resistance feedback on spin torque-induced switching of nanomagnets

In large magnetoresistance devices spin torque-induced changes in resistance can produce GHz current and voltage oscillations which can affect magnetization reversal. In addition, capacitive shunting in large resistance devices can further reduce the current, adversely affecting spin torque switching. Here, we simultaneously solve the Landau-Lifshitz-Gilbert equation with spin torque and the transmission line telegrapher's equations to study the effects of resistance feedback and capacitance on magnetization reversal of both spin valves and magnetic tunnel junctions. While for spin valves parallel (P) to anti-parallel (AP) switching is adversely affected by the resistance feedback due to saturation of the spin torque, in low resistance magnetic tunnel junctions P-AP switching is enhanced. We study the effect of resistance feedback on the switching time of magnetic tunnel junctions, and show that magnetization switching is only affected by capacitive shunting in the pF range.     

Roles of spin-polarized current and spin accumulation in the current-induced magnetization switching

To clarify the contributions of spin-polarized current and spin accumulation to the current-induced magnetization switching, the effects of the top electrode size of the magnetic nanopillar are investigated both theoretically and experimentally. Theoretical calculation demonstrates that the spin-polarized current and the spin accumulation can be adjusted in opposite directions by modifying the size of the top electrode. Increase in the size of the top electrode suppresses the spin accumulation but enhances the spin-polarized current inside the nanopillar. On the other hand, it is shown experimentally that the nanopillar with a wide top electrode exhibits small critical switching current compared to the nanopillar with a narrow top electrode. The results suggest that the spin-polarized current contributes to the current-induced magnetization switching dominantly over the spin accumulation.     

Nonequilibrium dynamics of anisotropic large spins in the kondo regime: time-dependent numerical renormalization group analysis

We investigate the time-dependent Kondo effect in a single-molecule magnet (SMM) strongly coupled to metallic electrodes. Describing the SMM by a Kondo model with large spin S>1/2, we analyze the underscreening of the local moment and the effect of anisotropy terms on the relaxation dynamics of the magnetization. Underscreening by single-channel Kondo processes leads to a logarithmically slow relaxation, while finite uniaxial anisotropy causes a saturation of the SMM's magnetization. Additional transverse anisotropy terms induce quantum spin tunneling and a pseudospin-1/2 Kondo effect sensitive to the spin parity.     

Mechanisms of spin-polarized current-driven magnetization switching

The mechanisms of the magnetization switching of magnetic multilayers driven by a current are studied by including exchange interaction between local moments and spin accumulation of conduction electrons. It is found that this exchange interaction leads to two additional terms in the Landau-Lifshitz-Gilbert equation: an effective field and a spin torque. Both terms are proportional to the transverse spin accumulation and have comparable magnitudes.     

Switching magnetization of a nanoscale ferromagnetic particle using nonlocal spin injection

We have performed nonlocal spin injection into a nanoscale ferromagnetic particle configured in a lateral spin-valve structure to switch its magnetization only by spin current. The nonlocal spin injection aligns the magnetization of the particle parallel to the magnetization of the spin injector. The spin current responsible for switching is estimated from the experiment to be about 200 microA, which is reasonable compared with the values obtained for conventional pillar structures. Interestingly, the switching always occurs from antiparallel to parallel in the particle-injector magnetic configurations, where no opposite switching is observed. Possible reasons for this discrepancy are discussed.     

Theoretically predicted picosecond optical switching of spin chirality in multiferroics

We show theoretically with an accurate spin Hamiltonian describing the multiferroic Mn perovskites that the application of the picosecond optical pulse with a terahertz frequency can switch the spin chirality through intensely exciting the electromagnons. There are four states with different spin chiralities, i.e., clockwise and counterclockwise ab/bc-plane spin spirals, and by tuning the strength, shape and length of the pulse, the switching among these states can be controlled at will. Dynamical pattern formation during the switching is also discussed.     

Macrospin in ferromagnetic nanojunctions

We study the passage of transverse current through a ferromagnetic nanojunctions, viz., a layered nanostructure of the spin-valve type containing two ferromagnetic layers separated by a spacer that prevents exchange coupling between the layers in the absence of current, but does not affect spin polarization of the current. The conditions for a high level of injection of spins by current are derived at which the concentration of injected nonequilibrium spins can reach or even exceed their equilibrium concentration. In such conditions, a number of new effects are observed. The threshold of exchange switching by current is lowered by several orders of magnitude due to matching of spin resistances of the layers. The application of an external magnetic field in the vicinity of the orientation phase transition additionally lowers this threshold. This leads to multistability, in which one value of the current corresponds to two (or more) stable noncollinear orientations of magnetization, and switching itself becomes irreversible. A methodical feature of this research is that the calculation is performed in the so-called macrospin approximation, which is in good agreement with most of known experiments. In this approximation, the equations of motion taking into account the torque as well as spin injection are derived for the first time and solved.     

斜坡补偿电流模式控制开关变换器的动力学建模与分析

降压型、升压型和升压-降压型DC-DC变换器是应用广泛的基本开关DC-DC变换器.电流模式控制开关DC-DC变换器在较宽的电路参数范围内具有两个边界,基于开关切换前后电感电流的上升和下降斜率,建立了斜坡补偿电流模式控制开关DC-DC变换器的统一模型.该模型进行无量纲归一化处理后只有三个参数,可有效展示开关DC-DC变换器在电感电流连续传导模式(CCM)和电感电流不连续传导模式(DCM)时的动力学特性.利用此模型,导出了轨道状态发生转移时的两个分界线方程,由此确定了开关DC-DC变换器的稳定周期1域、CCM鲁棒混沌域和DCM弱混沌强阵发域三个工作状态区域.开关DC-DC变换器二维参数映射图和电流模式控制降压型DC-DC变换器的电路实验观察验证了由两条分界线划分工作状态域的正确性.     

Reduction in critical current density of current-induced magnetization switching

We have investigated the current-induced magnetization switching in an exchange-biased spin valve structure. By using an unpatterned antiferromagnetic layer to pin the fixed Co layer, we obtained a lower switching current density by a factor of 5 than a simple spin valve structure. For the application, it is important to know how to keep the spin polarization when the thicker layer is pinned by an antiferromagnet. The unpatterned pinned ferromagnetic lead can be a good solution for spin-transfer-torque-activated device. The effect of Cu buffer layer on the top of the thin Co and Ru buffer layer under the thick Co layer on the current-induced magnetization switching in cobalt-based trilayer spin valves was also investigated. The experimental results showed that the Ru buffer layer in combination with Cu buffer layer could induce a decrease in the critical switching current by 30%, and an increase in the absolute resistance change by 35%, which is caused by an improvement of a microstructure of a thicker Co polarizer.     

Spin pump effects on the spin current through two coupled quantum dots

We theoretically study the spin pump effects of the rotating magnetic field on the spin current through two coupled quantum dots. Owing to the interdot coupling, two molecular states with different bands can be formed, resulting asymmetric spin current peaks. The possibility of manipulating the spin current is explored by tuning the strength, the frequency, and the direction of the rotating magnetic field. The number and location of the spin current peaks can be controlled by making use of various tunings. Furthermore, the normal 2π period of the spin current with respect to the magnetic flux can be destroyed by the interdot coupling.     

Spin current in quantum XXZ spin chain

The spin current in the one-dimensional quantum XXZ spin chain is studied based on the exact solutions. It is found that the spin voltage controlled by the unparallel boundary magnetic fields can induce the pure longitudinal spin current in the system. By using Wiener–Hopf and generalized algebraic Bethe ansatz methods, the analytic expressions for the spin current and the spin conductance are obtained. The spin current is proportional to the inverse of the length of the spin chain. The magnitude of spin current can be manipulated by the strength and the twist angle of two boundary magnetic fields. The exact analysis also shows that there exist an Ohm law or London equation type relation between the spin current and the spin conductance.     

Mechanism of exchange switching of spin valves by an inverse current

The exchange switching of spin valves by an inverse current can be explained by the interaction of the charge carriers with the spin-injection effective magnetic field. Such an interaction gives rise to transverse spin components, which are transferred to the magnetic lattice and cause its instability and switching. The spin-injection field is produced by longitudinal spin components, but it opens up a channel for the transverse spin transfer to the lattice. The spin transfer to the lattice and the switching occur in the free layer of the spin valve.     

石墨烯沟道全自旋逻辑器件开关特性

由于石墨烯的电导率相比典型的金属材料更大,自旋弛豫时间更长,自旋轨道相互作用更弱,从而在相同的注入电流情况下,自旋电流在石墨烯材料中的耗散作用更弱.基于自旋传输和磁化动力学耦合模型,研究了石墨烯沟道全自旋逻辑器件的开关特性.结果显示,在相同的电源电压下和器件尺寸下,石墨烯沟道材料的全自旋逻辑器件磁矩翻转时间比Cu沟道更短,流入输出纳磁体的自旋电流更大.同时,长度越短、宽度越窄的沟道其开关时间更短,功耗更小.在满足磁体磁矩翻转的临界开关电流的情况下,石墨烯沟道的可靠工作长度也显著大于Cu沟道.所以石墨烯材料是相比于金属材料更理想的沟道材料.另外,通过合理选择沟道尺寸,能进一步降低器件开关时间和功耗.上述结论为全自旋逻辑器件的优化设计与应用提供了理论参考.     

Nearly noninvasive readout and manipulation of spin in double quantum dot using spin bias

Dynamics of two quantum dots coupled to electrodes with spin bias is investigated theoretically by means of the master equations. The two dots are coupled via exchange interaction. When the exchange interaction is much smaller than the lead-dot 2 coupling and dot 2 is under a symmetric spin bias, an initially fully polarized electron spin in dot 1 undergoes an oscillation with ignorable attenuation. Meanwhile, the direction of charge current flowing through dot 2 oscillates in the same period as that of the spin in dot 1. This allows to reverse or nearly noninvasively read out the spin in dot 1, by switching on and off the exchange interaction for a duration of half-integer or integer periods of the oscillation, respectively.