Microstructure and electrical properties of BaTiO<Subscript>3</Subscript> and (Ba,Sr)TiO<Subscript>3</Subscript> ferroelectric thin films on nickel electrodes

Nickel thin films have been sputtered on standard Si/SiO₂ substrates with TiO₂ as an adhesive layer. The thermal stability of these substrates was analyzed. SEM images show an increase in grain size with annealing temperature. They were found to be stable till 800°C, beyond which the nickel layer disintegrated. These substrates were used for deposition of BaTiO₃ and (Ba,Sr)TiO₃ dielectric thin films under a reducing atmosphere. The dielectric thin films were processed with various pyrolysis and annealing temperatures in order to optimize the dielectric properties. Increased pyrolysis temperatures showed an increase in the grain size. Results on these nickelised substrates were finally compared with dielectric films deposited on platinized silicon substrates under identical conditions but crystallized in an oxygen atmosphere.     

Chemical solution processing and characterization of Ba(Zr,Ti)O<Subscript>3</Subscript>/LaNiO<Subscript>3</Subscript> layered thin films

Ba(Zr,Ti)O₃/LaNiO₃ layered thin films have been synthesized by chemical solution deposition (CSD) using metal-organic precursor solutions. Ba(Zr,Ti)O₃ thin films with smooth surface morphology and excellent dielectric properties were prepared on Pt/TiO _x /SiO₂/Si substrates by controlling the Zr/Ti ratios in Ba(Zr,Ti)O₃. Chemically derived LaNiO₃ thin films crystallized into the perovskite single phase and their conductivity was sufficiently high as a thin-film electrode. Ba(Zr,Ti)O₃/LaNiO₃ layered thin films of single phase perovskite were fabricated on SiO₂/Si and fused silica substrates. The dielectric constant of a Ba(Zr_0.2Ti_0.8)O₃ thin film prepared at 700°C on a LaNiO₃/fused silica substrate was found to be approximately 830 with a dielectric loss of 5% at 1 kHz and room temperature. Although the Ba(Zr_0.2Ti_0.8)O₃ thin film on the LaNiO₃/fused silica substrate showed a smaller dielectric constant than the Ba(Zr_0.2Ti_0.8)O₃ thin film on Pt/TiO _x /SiO₂/Si, small temperature dependence of dielectric constant was achieved over a wide temperature range. Furthermore, the fabrication of the Ba(Zr,Ti)O₃/LaNiO₃ films in alternate thin layers similar to a multilayer capacitor structure was performed by the same solution deposition process.     

Dielectric properties and I-V characteristics of (Pb<Subscript>0.4</Subscript>Sr<Subscript>0.6</Subscript>)TiO<Subscript>3</Subscript> thin films improved by TiO<Subscript>2</Subscript> buffer layers

A TiO₂ thin buffer layer was introduced between the (Pb_0.4Sr_0.6)TiO₃ (PST) film and the Pt/Ti/SiO₂/Si substrate in an attempt to improve their electrical properties. Both TiO₂ and PST layers were prepared by a chemical solution deposition method. It was found that the TiO₂ buffer layer increased the (100)/(001) preferred orientation of PST and decreased the surface roughness of the films, leading to an enhancement in electrical properties including an increase in dielectric constant and in its tunability by DC voltage, as well as a decrease in dielectric loss and leakage current density. At an optimized thickness of the TiO₂ buffer layer deposited using 0.02 mol/l TiO₂ sol, the 330-nm-thick PST films had a dielectric constant, loss and tunability of 1126, 0.044 and 60.7% at 10 kHz, respectively, while the leakage current density was 1.95 × 10⁻⁶ A/cm² at 100 kV/cm.     

The influence of film thickness and process temperature on <Emphasis Type="Italic">c</Emphasis>-axis orientation of Bi<Subscript>3</Subscript>TiTaO<Subscript>9</Subscript> thin films

Bi-layered ferroelectric Bi₃TiTaO₉ (BTT) thin films with different thickness (ranging from 100 to 400 nm) were successfully fabricated on Pt(111)/TiO₂/SiO₂/(100)Si substrates using chemical solution deposition (CSD) technique at different annealing temperatures. The c-axis orientation of the films was affected by film thickness and process temperature. The thinner the film and the higher the process temperature, the higher the c-axis orientation. With the increase of film thickness, the stress decreased but the film roughness increased, which led to the decrease of c-axis orientation of films. BTT films annealed at 800°C were found to have much improved remament polarization (P _r ) than that of films annealed at 650 and 750°C. The P _r and coercive field (E _c ) values were measured to be 2 μC/cm² and 100 kV/cm, respectively. BTT films showed well-defined ferroelectric properties with grain size larger than 100 nm.     

Preparation of Ba(Ti,Sn)O<Subscript>3</Subscript> thin films by PVP-assisted sol–gel method and their dielectric properties

Ba(Ti_1−x Sn _x )O₃ (x = 0.10 or 0.15) thin films were deposited on Si(100) and Pt(111)/TiO _x /SiO₂/Si(100) substrates via sol–gel spin-coating. Crack-free thin films could be obtained by single-step deposition, where the thickness was about 0.46 and 0.29 μm at 1000 and 2000 rpm, respectively. Circular delaminated parts 100 μm in diameter, however, tended to appear in thicker films deposited at 1000 rpm. On both kinds of substrates, the films were crystallized between 500 and 600 °C, where the perovskite phase emerged as the primary phase, and the formation of single-phase perovskite was basically achieved between 700–800 °C. The films deposited on Pt(111)/TiO _x /SiO₂/Si(100) substrates, however, tended to have small SnO₂ and BaCO₃ diffraction peaks, which decreased with increasing spinning rate. The dielectric properties were evaluated on the films deposited on Pt(111)/TiO _x /SiO₂/Si(100) substrates at 2000 rpm. The films prepared by single-step depositions had dielectric constants of 350 and 230, and dielectric loss of 0.30 and 0.10 at x = 0.1 and 0.15, respectively. The films prepared by two time deposition had dielectric constants of 450 and 250, and dielectric loss of 0.21 and 0.19 at x = 0.10 and 0.15, respectively.     

Structure and electrical properties of Pb(Zr<Subscript>0.25</Subscript>Ti<Subscript>0.75</Subscript>)O<Subscript>3</Subscript> thin films on LaNiO<Subscript>3</Subscript>—Coated thermally oxidized Si substrates

Pb(Zr_0.25Ti_0.75)O₃ (PZT25) thin films were prepared on LaNiO₃-coated thermally oxidized silicon substrates by chemical solution deposition method, where LaNiO₃ electrodes were also prepared by a chemical solution deposition technique. The dielectric constant and dielectric loss of the PZT25 thin films were 570 and 0.057, respectively. The remanent polarization and coercive field were 20.11 μC/cm² and 60.7 kV/cm, respectively. The PZT25 thin films on LaNiO₃-coated thermally oxidized silicon substrates showed improved fatigue characteristics compared with their counterparts on plantium-coated silicon substrates.     

Sol–gel derived 12BaO·7Al<Subscript>2</Subscript>O<Subscript>3</Subscript> thin films using metal alkoxides

The 12BaO·7Al₂O₃ (B12A7) thin films have been prepared via sol–gel process. Optical and electrical properties of B12A7 films have been investigated. The films were coated on soda lime float glass by the dip coating process, and annealed in air and hydrogen (H₂) at 450 °C for 2 h. The UV absorption edge was red shifted for films annealed in H₂ atmosphere. The B12A7 films had high transparency about 90% in wide visible range with maximum of 95% at 575 nm wavelength. The sheet resistance of the 300 nm films corresponding to 90.57 and 0.974 kΩ per square has been observed for air and H₂ annealed, respectively.     

Light conversion efficiency of flower like structure TiO<Subscript>2</Subscript> thin film solar cells

Flower like structure TiO₂ thin films have been grown onto ITO coated glass substrates by sol–gel method. TiO₂ nano flowers have been sensitized using CdS quantum dots prepared using simple precursors by chemical method. The assembly of CdS quantum dots with TiO₂ nano flower has been used as photo-electrode in quantum dot sensitized solar cells. The surface morphology has been studied using scanning electron microscope; it shows that the film exhibits flower like structure. The absorption spectra reveals that the absorption edge of CdS quantum dot sensitized TiO₂ nano flower shifts towards longer wavelength side when compared to the absorption edge of TiO₂ nano flower. The efficiency of the fabricated CdS quantum dot sensitized TiO₂ nano flower based solar cell is 0.66%.     

Photo-Induced Hydrophilicity of TiO<Subscript>2</Subscript> Films Deposited on Stainless Steel via Sol-Gel Technique

The photo-induced hydrophilicity of TiO₂ films deposited on stainless steel substrates and silicon wafers using two different sol-gel routes has been investigated. The results indicate that crystalline titanium oxide films with excellent hydrophilic properties can be obtained on silicon wafer with both routes. XPS and XRD data reveal that films deposited on stainless steel exhibit crystallization features similar to those of films deposited on silicon wafers, and only differ by their oxidation degree owing to a TiO₂ reduction process associated to a diffusion of iron ions during deposition of the acidic sol and/or high temperature post-treatment. Consequently, hydrophilic properties of films deposited on stainless steel are inhibited. The deposition of a SiO_x barrier layer at the film/substrate interface allows preventing such a detrimental substrate influence. A low temperature deposition route of the TiO₂ film associated to the presence of a barrier layer yields best results in preventing iron contamination of the films.     

Microstructure and electrical properties of lead zirconate titanate thin films deposited by sol-gel method on La<Subscript>0.7</Subscript>Sr<Subscript>0.3</Subscript>MnO<Subscript>3</Subscript>/SiO<Subscript>2</Subscript>/Si substrate

(La_0.7Sr_0.3)MnO₃ thin films were deposited on SiO₂/Si substrates by a metal-organic decomposition (MOD) method, and then Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films were grown on (La_0.7Sr_0.3)MnO₃-coated SiO₂/Si substrates by a sol-gel method. The effects of annealing temperature on the crystalline phases, microstructures and electrical properties of the PZT films were investigated. X-ray diffraction analysis results indicated that the PZT films with a perovskite single phase could be obtained by annealing at 650°C. The dielectric constant and the remnant polarization of the PZT films increased with increasing annealing temperature. The remnant polarization and the coercive field of the films annealed at 650°C were 18.3 μC/cm² and 35.5 kV/cm, respectively, whereas the dielectric constant and loss value measured at 1 kHz were approximately 1100 and 0.81, respectively.     

Synthesis,Characterization and Photocatalytic Application of TiO<Subscript>2</Subscript>/SnO<Subscript>2</Subscript> Nanocomposite Obtained Under Non-thermal Plasma Condition at Atmospheric Pressure

A plasma-assisted synthesis of TiO₂/SnO₂ nanocomposite is described. In this approach, a precursor containing a mixture of [TiCl₃ and SnCl₂] exposed to electric discharge was oxidized by plasma-generated reactive species (HO^·/H₂O = 2.85 eV/SHE). SnO₂ microstructures with a diameter of 10–40 µm were coated by thin layers TiO₂ nanorods with mean diameter of 6–8 nm. The obtained TiO₂/SnO₂ nanocomposite was characterized by transmission and scanning electron microscopy, X-ray diffraction and Fourier transform infrared. TiO₂/SnO₂ nanocomposite was found to be a promising new material for the photocatalytic discoloration of aqueous Remazol Brilliant Blue-R dye under daylight and UVA light sources, due to the combined effects of large specific surface area and heterojunction which efficiently separates the electron–hole pairs delaying the charge recombination. The leaching test indicated that the nanocomposite is stable easily reusable.     

Conductivity of SnO<Subscript>2</Subscript>-In<Subscript>2</Subscript>O<Subscript>3</Subscript> nanocrystalline composite films

The conductivity of films consisting of a mixture of SnO₂ and In₂O₃ nanocrystals at 200–500°C was studied. Based on the experimental data, it was assumed that in films containing less than 20 wt % In₂O₃, the current flows along SnO₂ nanocrystals. A model of conductivity in these films is presented; it includes an electron transfer from In₂O₃ to SnO₂, which forms positively charged In₂O₃ nanocrystals that contact the negatively charged SnO₂ nanocrystals. In the presence of In₂O₃ nanocrystals, the activation energy of the electron transfer between SnO₂ nanocrystals decreased substantially because of a decrease in the barrier of electron transfer between SnO₂ crystals under the action of the negative charge. As a result, a percolation cluster of charged SnO₂ crystals formed. At high contents of In₂O₃ (over 20 wt %), the conductivity increased dramatically. The curve of the temperature dependence of conductivity changed because of the appearance of a percolation cluster of In₂O₃ nanocrystals, in which the current passed. The conductivity of a mixed film of this kind differed from that of the nanocrystalline film of pure In₂O₃.     

Novel Electroless Deposition of Cu<Subscript>3</Subscript>Se<Subscript>2</Subscript> Film on Silicon Substrate by a Simple Galvanic Displacement Process

A novel electroless deposition method for depositing highly uniform adhesive thin films of copper selenide (Cu₃Se₂) on silicon substrates from aqueous solutions is described. The deposition is carried out by two coupled galvanic reactions in a single deposition bath containing copper cations, hydrogen fluoride, and selenous acid: the galvanic deposition of copper on silicon and the subsequent galvanic reaction between the deposited copper with selenous acid in the deposition bath. The powder X-ray diffraction and scanning electron microscopy are used to characterize and examine the deposited films.     

Electrodeposition of CuGaSe<Subscript>2</Subscript> and CuGaS<Subscript>2</Subscript> thin films for photovoltaic applications

CuGaSe₂ and CuGaS₂ polycrystalline thin film absorbers were prepared by one-step electrodeposition from an aqueous electrolyte containing CuCl₂, GaCl₃ and H₂SeO₃. The pH of the solution was adjusted to 2.3 by adding HCl and KOH. Annealing improved crystallinity of CuGaSe₂ and further annealing in sulphur atmosphere was required to obtain CuGaS₂ layers. The morphology, topography, chemical composition and crystal structure of the deposited thin films were analysed by scanning electron microscopy, atomic force microscopy, energy dispersive spectroscopy and X-ray diffraction, respectively. X-Ray diffraction showed that the as-deposited CuGaSe₂ film exhibited poor crystallinity, but which improved dramatically when the layers were annealed in forming gas atmosphere for 40 min. Subsequent sulphurization of CuGaSe₂ films was performed at 400 °C for 10 min in presence of molecular sulphur and under forming gas atmosphere. The effect of sulphurization was the conversion of CuGaSe₂ into CuGaS₂. The formation of CuGaS₂ thin films was evidenced by the shift observed in the X-ray diffraction pattern and by the blue shift of the optical bandgap. The bandgap of CuGaSe₂ was found to be 1.66 eV, while for CuGaS₂ it raised up to 2.2 eV. A broad intermediate absorption band associated to Cr and centred at 1.63 eV was observed in Cr-doped CuGaS₂ films.     

Microstructure and properties of sol-gel derived Pb(Zr<Subscript>0.3</Subscript>Ti<Subscript>0.7</Subscript>)O<Subscript>3</Subscript> thin films on GaN/sapphire for nanoelectromechanical systems

Highly (111) oriented, phase-pure perovskite Pb(Zr_0.3Ti_0.7)O₃ (or PZT 30/70) thin films were deposited on single-crystal, (0001) wurtzite GaN/sapphire substrates using the sol-gel process and rapid thermal annealing. The phase, crystallinity, and stoichiometry of annealed PZT films were evaluated by X-ray diffraction and Rutherford backscattering spectroscopy. The atomic force microscopy revealed a smooth PZT surface (rms roughness ∼1.5 nm) with striations and undulations possibly influenced by the nature of the underlying GaN surface. The cross-sectional field-emission scanning electron microscopic images indicated a sharper PZT/GaN interface compared to that of sol-gel derived PZT on (111) Pt/TiO₂/SiO₂/(100) Si substrates. The capacitance-voltage (C-V) characteristics for PZT in the Pt/PZT/GaN (metal-ferroelectric-semiconductor or MFS) configuration were evaluated as a function of annealing temperature and applied voltage. The observed C-V hysteresis stemmed from trapped charge at defect sites within PZT. Also, the lower capacitance density (C/A = 0.35 μF/cm², where A is the area of an electrode) and remnant polarization (P _r ∼ 4 μC/cm²) for PZT in the MFS configuration, compared to the values for PZT in the MFM configuration (Pt/PZT/Pt), were attributed to the high depolarization field within PZT.     

Pulsed electrodeposition of WO3–TiO2 composite films

Cathodic electrodeposition was used to prepare thin films of WO₃ and TiO₂ on F-doped SnO₂ glass substrates. A new pulsed deposition technique was developed to prepare WO₃–TiO₂ composite films over a wide compositional range. Such composite films containing comparable amounts of WO₃ and TiO₂ showed superior photoelectrochemical performance in 0.1 M Na₂SO₄ relative to the component oxides themselves.     

Formation of Al<Subscript>2</Subscript>O<Subscript>3</Subscript>–TiO<Subscript>2</Subscript> bilayer using atomic layer deposition and its application to dynamic random access memory

To enhance film conformality together with electrical property suitable for dynamic random access memory (DRAM) capacitor dielectric, the effects of oxidant and post heat treatment were investigated on aluminum and titanium oxide (Al₂O₃–TiO₂) bilayer (ATO) thin film formed by atomic layer deposition method. For the conformal deposition of Al₂O₃ thin film, the O₃ oxidant required a higher deposition temperature, more than 450 °C, while H₂O or combined oxygen sources (H₂O+O₃) needed a wide range of deposition temperatures ranging from 250 to 450 °C. Conformal deposition of the TiO₂ thin film was achieved at around 325 °C regardless of the oxidants. The charge storage capacitance, measured from the ATO bilayer (4 nm Al₂O₃ and 2 nm TiO₂) deposited at 450 °C for Al₂O₃ and 325 °C for TiO₂ with O₃ oxidant on the phosphine-doped poly silicon trench, showed about 15% higher value than that of 5 nm Al₂O₃ single layer thin film without any increase of leakage current. To maintain the improved electrical property of the ATO bilayer for DRAM application, such as enhanced charge capacitance without increase of leakage current, upper electrode materials and post heat treatments after electrode formation must be selected carefully. Dedicated to Professor Su-Il Pyun on the occasion of his 65th birthday.     

Effect of heat treatment on electrochromic properties of TiO<Subscript>2</Subscript> thin films

Electrochromic titanium oxide (TiO₂) films were deposited on ITO/glass substrates by chemical solution deposition (CSD). The stock solutions were spin-coated onto substrates and then heated at various temperatures (200–500 °C) in various oxygen concentrations (0–80%) for 10 min. The effects of the processing parameters on the electrochromic properties of TiO₂ films were investigated. X-ray diffraction measurements demonstrated that the amorphous TiO₂ films were crystallized to form anatase films above 400 °C. The electrochromic properties and transmittance of TiO₂ films were measured in 1 M LiClO₄–propylene carbonate (PC) non-aqueous electrolyte. An amorphous 350 nm-thick TiO₂ film that was heated at 300°C in 60% ambient oxygen exhibited the maximum transmittance variation (ΔT%), 14.2%, between the bleached state and the colored state, with a ΔOD of 0.087, Q of 10.9 mC/cm², η of 7.98 cm²/C and x in Li _x ClO₄ of 0.076 at a wavelength (λ) of 550 nm.     

Tin Acetylacetonate as a Precursor for Producing Gas-Sensing SnO<Subscript>2</Subscript> Thin Films

To expand the range of precursors used in the sol–gel technology for applying nanostructured SnO₂ thin films promising as components of semiconductor chemical gas sensors, the efficiency of using tin acetylacetonate solutions with various precursor concentrations was demonstrated. It was determined that finely divided SnO₂ with a crystallite size of 3–4 nm (cassiterite) can be obtained by hydrolysis by atmospheric moisture in the course of solvent evaporation at room temperature. Using tin acetylacetonate solutions with various precursor concentrations for applying SnO₂ thin films by dip coating to the surface of rough ceramic Al₂O₃-based substrates with platinum interdigital electrodes and a microheater resulted in significant differences in microstructure, continuity, thickness, and porosity of the produced coatings. In a lower-concentration (0.13 mol/L) tin acetylacetonate solution, a multilayer dense continuous SnO₂ coating was applied, whereas in a higher-concentration (0.25 mol/L) solution, the formed layer comprised aggregated nanoparticles 30–60 nm in size and had much more defects and higher porosity. The sensitivity of the obtained thin-film nanostructures to the most practically important gaseous analytes: CO, H₂, CH₄, CO₂, and NO₂. The produced two-dimensional nanomaterials were shown to be promising for detecting carbon monoxide at 200–300°C in dry air.     

Structure and photochromic properties of molybdenumphosphoric acid/TiO<Subscript>2</Subscript> composite films

TiO₂ sol-gel composite films with dropping molybdenumphosphoric acid (PMoA) have been prepared by sol-gel method. The structure and constitute of composite thin films were studied with Fourier transforms infrared spectroscopy (FT-IR) atomic force microscopy (AFM), and X-ray diffraction (XRD) patterns, respectively. The photochromic behavior and mechanism of composite thin films were investigated with ultraviolet-visible spectra (UV-vis) and electron spin resonance (ESR). FT-IR results showed that the Keggin geometry of PMoA was still preserved inside PMoA/TiO₂ composite thin films, and a charge transfer bridge was built at the interface of PMoA and TiO₂ through the Mo-O-Ti bond. Surface topography of the composite film showed obvious changes before/after adding PMoA, and the surface topography of composite films showed obvious changes before/after irradiating as well. Composite thin film had reversible photochromic properties. Irradiated with UV light, transparent films changed from colorless to blue and they can bleach completely with ambient air in the dark. ESR results showed that TiO₂ were excitated by UV light to produce electrons, which deoxidized PMoA to produce heteropolyblues. The photochromic process of PMoA/TiO₂ system was carried through electron transfer mechanism.