Photoinduced non-linear optical diagnostic of InI ferroelastic nanocrystals

Photoinduced second harmonic generation was established in the centrosymmetric layered crystals of InI. The effect was grounded on occurrence of photoinduced optical second harmonic generation in the ferroelastic phase of the InI crystals. As a subject of investigations layered ferroelastic crystal of InI was chosen. It was found that the ferroelastic phase disappears during decrease of the nanolayers from 15 nm up to 6 nm. Such effects are explained by occurrence of anharmonic phonon modes confined by the walls of the layered crystals. We have found that the effect may be of importance for the further investigations of the layered nanocrystals. At the same time the giant value of the photoinduced SHG indicates on a possible using the nanolayered crystals like promising non-linear optical crystals.     

Electronic level diagram and structure of metastable centers in CdF2:Ga and CdF2:In semiconducting crystals

A study is reported of the optical properties of wide-gap, predominantly ionic cadmium fluoride crystals in photo-and thermally stimulated transformations of metastable indium and gallium centers. An analysis of these properties leads one to a conclusion of gallium having two metastable states (two types of deep centers). The deep-center binding energies and the barriers separating the shallow (hydrogenic) and deep centers have been determined for both impurities. Configuration-coordinate diagrams are developed, and microscopic models for the deep centers are proposed. It is concluded that these centers are identical with the metastable DX centers in typical semiconducting crystals. Thus cadmium fluoride is the most ionic among the crystals where DX centers have thus far been found. The potential of using such crystals for optical information recording is discussed. Fiz. Tverd. Tela (St. Petersburg) 39, 2130–2136 (December 1997)     

Monolayered semiconducting GeAsSe and SnSbTe with ultrahigh hole mobility

High carrier mobility and a direct semiconducting band gap are two key properties of materials for electronic device applications. Using first-principles calculations, we predict two types of two-dimensional semiconductors, ultrathin GeAsSe and SnSbTe nanosheets, with desirable electronic and optical properties. Both GeAsSe and SnSbTe sheets are energetically favorable, with formation energies of −0.19 and −0.09 eV/atom, respectively, and have excellent dynamical and thermal stability, as determined by phonon dispersion calculations and Born–Oppenheimer molecular dynamics simulations. The relatively weak interlayer binding energies suggest that these monolayer sheets can be easily exfoliated from the bulk crystals. Importantly, monolayer GeAsSe and SnSbTe possess direct band gaps (2.56 and 1.96 eV, respectively) and superior hole mobility (~20 000 cm²·V⁻¹·s⁻¹), and both exhibit notable absorption in the visible region. A comparison of the band edge positions with the redox potentials of water reveals that layered GeAsSe and SnSbTe are potential photocatalysts for water splitting. These exceptional properties make layered GeAsSe and SnSbTe promising candidates for use in future high-speed electronic and optoelectronic devices.     

Strong and weak modes in polytypes of SiC

The concept of an extended Brillouin zone is used to analyze the intensity of phonon modes observed in optical and Raman investigations of different polytypes of silicon carbide. It is shown that the relative intensity of these modes agrees with the magnitude of the splitting of the doublets, which are degenerate in the extended zone. Pis’ma Zh. éksp. Teor. Fiz. 69, No. 3, 247–250 (10 February 1999)     

Plastic properties and defect structure of LiF-LiF:Mg layered single crystals at T = 4.2 K

The compressive stress-strain diagrams are obtained for layered single crystals of the LiF-LiF:Mg type with different orientations of the reinforcing layers at T = 4.2 and 300 K. The strength characteristics and specific features of the defect and dislocation structures of the crystals strained in liquid helium are studied and compared with those for the crystals strained at 300 K. It is established that the layered single crystals remain plastic at T = 4.2 K. Under a strain ε > 1%, there arise microcracks and macrocracks responsible for complete fracture of the crystals. It is revealed that long-term (for ten years) storage of the layered single crystals at 300 K substantially affects the magnesium impurity structure in the reinforcing layers and leads to a considerable enhancement of their strength characteristics. This effect is taken into account when analyzing the strength properties of the layered single crystals in the temperature range T = 300–4.2 K. The inference is made that the results obtained in studying the defect microstructure of the model layered single crystals at the initial stage of plastic deformation can be used to predict the strength properties of the composites at T = 4.2 K.     

弱耦合多原子半无限晶体中的表面极化子的有效势

本文研究弱耦合多原子半无限晶体中表面极化子的性质。采用线性组合算符和幺正变换导出表面极化子的的有效势。     

Raman and Infrared Spectra of Crystals with the Cadmium Iodide Structure

Abstract

Raman and far infrared spectra (in the frequency range 20–360 cm^?1) have been recorded for polycrystalline samples of six crystals having the cadmium iodide layered structure. The four fundamental zone-center vibrational frequencies are assigned for CoBr₂, FeBr₂, MgBr₂, MnBr₂, CdI₂ and MgI₂. Values of the principal interlayer force constants are deduced from a simple linear chain dynamical model, and comparisons are made with recent results from spectroscopic studies of crystals with the related cadmium chloride structure.     

Electron and hole trapped defects produced by thermoreduction or irradiation in Stabilized Zirconia

Abstract

When undoped Yttrium Stabilized Zirconia is exposed either to reducing atmospheres or to electrical currents it becomes coloured. In this paper we present the results of a systematic study applying optical and EPR techniques to zirconia single crystals stabilized by calcium or yttrium, in which defects were produced by several methods including X-irradiation or reduction at different temperatures. Two EPR signals and three absorption bands have been related with three defects involving holes trapped in oxygen ions and electrons trapped in zirconium ions. The photothermal stability of the defects has been studied. Taking into account their spectroscopical properties and statistical considerations we propose novel models for these defects.     

Davydov splitting and rigid-layer modes in InS crystal

Polarized infrared reflection spectra of InS layer crystal have been measured. Both components of the Davydov doublets caused by the splitting of intralayer vibrations due to the interlayer interactions are active in i.r. spectra. Doublet frequencies have been used to calculate the rigid-layer mode frequencies which are correlated with the experimental ones. It has been established that in InS crystal the frequencies of rigid-layer modes are much higher than those of ordinary layer crystals. Atomic displacements have been found at i.r.-active normal modes.     

Lattice vibrations in the orthorhombic commensurate charge density wave phase of 2H-TaSe2

Lattice vibrations in 2H-TaSe₂ have been reinvestigated by Raman scattering in view of the recent orthorhombic structure of the commensurate charge density wave (CCDW) phase. The renormalization of six charge density waves on two layers gives four A_g modes and two B_1g modes in the orthorhombic CCDW phase, in place of two A_1g modes and two E_2g modes in the hexagonal CCDW phase which had been believed. The splitting of the E_2g modes to the A_g and B_1g modes in the orthorhombic symmetry depends on the interlayer interaction. The observed small splitting less than 3 cm^-1 shows the weak interlayer interaction. The energies of the four A_g modes and the two B_1g modes are presented as a function of temperature.     

Low-frequency interlayer vibration modes in two-dimensional layered materials

Two-dimensional (2D) layered materials have been attracted tremendous research interest because of their novel photoelectric properties. If a single atomic layer instead of individual atoms is taken as a rigid motion object, two unique interlayer vibrations, i.e. compression/breathing and shear motions, at ultra-low frequencies can be expected and actually have been observed in many layered materials. The vibrations stem from the interlayer van der Waals interaction and can be well described by a conventional linear-chain model in most cases. The vibration frequencies strongly depend on layer thickness, which enables an accurate determination of layer numbers. A quick and nondestructive determination of flake thickness is particularly important for the materials, since the physical properties can be dramatically changed in the cases of several atomic layers. As a measure of interlayer coupling, the low-frequency modes are also sensitive to the stacking methods of atomic layers and the overlapping of different kinds of 2D materials. This allows the modes to play a key role in the applications like van der Waals heterojunctions. In this paper, we will give a brief review on the experimental observations and theoretical understanding of the interlayer modes in several typical 2D systems, as well as their actual and potential applications.     

Electron paramagnetic resonance spectroscopy of Cr 3+ in hexagonal Cs 2 NaGaF 6 crystals

Powder samples of hydrothermally grown Cr 3+ -doped Cs 2 NaGaF 6 crystals have been investigated with electron paramagnetic resonance spectroscopy at X - (9.5 v GHz) and Q -band (34 v GHz). Analysis of the spectra clearly demonstrates that there are two distinct Cr 3+ centres in the Cs 2 NaGaF 6 crystal, having nearly identical g factors, but differing largely from the viewpoint of their zero field splitting. By using the 53 Cr hyperfine spectra observed with electron nuclear double resonance spectroscopy, it is deduced that these centres have opposite signs for the zero field splitting. The spectroscopic properties of the Cr 3+ centres in the isostructural Cs 2 NaGaF 6 and Cs 2 NaAlF 6 crystals are compared and discussed.     

Effect of cobalt impurity ions on the magnetic and electrical properties of iron monosilicide crystals

The results of experimental investigations of Fe_{1 − x} Co _x Si crystals in the impurity limit with x = 0.001, 0.005, and 0.01 are reported. The temperature and field dependences of the magnetic susceptibility have been studied. According to the experimental data, the introduction of cobalt impurity leads to a change in the energy structure, which is most pronounced in a change in the electrical properties. The temperature, field, and concentration dependences of the resistivity have been measured. The results have been interpreted in the framework of the Kondo model.     

Transient optical absorption of excited F -centres in BeO

Time-resolved spectra, decay kinetics and polarization of the transient optical absorption induced by irradiation of additively colored BeO crystals with electron pulses have been studied. It has been established that the two bands at 3.8 and 4.3 v eV of the transient optical absorption are due to the transitions between triplet and singlet excited states of F -centres in BeO. The polarization of excited F -centres absorption is discussed on the basis of analysis of the splitting of singlet and triplet states in crystalline field of the C 3v symmetry.     

Preparation and electrical properties of InSe

Abstract

Single crystals of Indium Selenide are prepared by vapour growth technique as it is difficult to prepare large single crystals by vertical Bridgman technique. The effect of stochiometric changes and doping have been studied. The electrical properties of n-type single crystals are discussed.     

光子晶体自准直光束偏振分束器

结合能带图和等频图分析,基于光子晶体自准直效应和光子带隙,设计了一种紧凑、高效的偏振分束器.时域有限差分法(FDTD)模拟表明,该设计可以在一个较大的频率范围f=0.268—0.278(c/a) 内实现TE模和TM模的高效(85%)、大角度(90°)分离.在光通讯波长λ=1.55 μm,该设计尺寸仅为9 μm×9 μm.这些特性使其在光通讯领域中具有重要的应用前景. 关键词： 光子晶体 偏振分束器 自准直     

多原子半无限晶体中表面极化子的内部激发态

研究多原子半无限晶体中电子与表面光学(SO)声子耦合强,而与体纵光学(LO)声子耦合弱的极化子的激发态性质.采用线性组合算符和幺正变换方法导出与SO声子耦合强而与LO声子耦合弱情形下极化子的基态能量、第一内部激发态能量和激发能量.结果表明,多原子半无限晶体中与SO声子耦合强,而与LO声子耦合弱的极化子的基态能量、第一内部激发态能量不仅包含不同支LO声子和不同支SO声子与电子耦合的能量,而且也包含不同支SO声子之间相互作用贡献的附加能量.激发能量与体纵光学声子无关.     

Structural,electrical and optical properties of gamma irradiated methyl para-hydroxy benzoate single crystals

ABSTRACT

Nonlinear optical materials (NLO) have been garnering attention due to their role in optical data storage, optical communication and laser technology. Organic crystals have emerged as an extremely important class of NLO materials, since their NLO properties compare very well with traditional inorganic NLO materials like KCl, LiNbO₃, KDP (potassium dihydrogen phosphate), etc. They offer the additional advantage that they can be grown relatively inexpensively from solution close to room temperature, unlike the inorganic NLO materials which are grown from high temperature melts. In the present work, organic transparent single crystals of methyl para-hydroxy benzoate (MHB) were grown by slow evaporation solution growth technique (SEST) from aqueous solution at room temperature. The changes in structural, electrical and optical properties of gamma irradiated MHB single crystals were studied using X-ray diffraction (XRD), UV–Visible absorption spectroscopy, Photo-luminescence (PL), Fourier transform infrared (FTIR) spectroscopy and AC conductivity measurements at room temperature. The polished MHB single crystals were irradiated with gamma rays of doses 10 and 15 kilogray (kGy). From the XRD analysis, it was observed that gamma irradiation for these doses drastically decreases the crystallinity. The optical absorption constants were examined by UV-Visible absorption spectroscopy, measured over the wavelength range of 200–800?nm, at normal incidence. The optical band gap as estimated from the Tauc plot ((αhν)² vs hν) was found to be reduced with increasing gamma irradiation doses. PL spectra showed emission at wavelengths of 361?nm (3.43?eV) and 452?nm (2.74?eV), with enhanced intensities for the irradiated crystals. FTIR spectroscopy was utilised to identify the functional groups of MHB and indicated the rupture of specific types of bonds with gamma irradiation. Apart from that, the enhancement of AC conductivity with gamma irradiation was also observed for the gamma irradiated crystals.     

Effect of dimensionality on the spectra of hybrid plasmonic-photonic crystals

Based on colloidal crystals of various dimensionality, hybrid metal-dielectric plasmonic-photonic heterocrystals have been prepared. It has been shown that the spectra of optical transmission of heterocrystals are mostly controlled by the sum of contributions of composing plasmonic and photonic crystals. At the same time, there are a number of phenomena caused by the mutual effect of heterostructure components, which lead to a deviation of observed optical properties from the linear superposition of responses of these crystals. In particular, it has been found that the anomalous transmission controlled by the plasmonic crystal decreases with increasing the dimensionality of the photonic crystal attached to it. At the same time, light reflection on a metallized surface changes light diffraction in photonic crystals and leads to Fabry-Perot oscillation amplification. It has been assumed that an intermediate layer is formed, in which Bloch modes of the photonic crystal and surface plasmon-polaritons of the plasmonic crystal are hybridized.     

Electrophysical properties and energetical spectrum of heteroepitaxial germanium films

An epitaxial growth of Ge films from molecular beam is characterized by thermodynamical nonequilibrium. This leads to formation of numerous structural defects connected with local levels in the band gap (mainly acceptor-type). Depending on the deposition temperature the density of such levels may change in wide range (10¹⁶–10¹⁸ cm^?3). This determines various mechanisms of impurity conduction. The tails of the density of states in the band gap are also connected with the defect structure of the films. Stresses in heteroepitaxial Ge films result in the splitting of the valence band atk = 0 and in a change of the band gap. Thus, these stresses have influence on the electrical and optical properties of the films.