基于光学与光—电转换模型对聚合物电池功能层厚度与性能相关性分析

本文基于Forouhi-Bloomer 模型得到了这种功能层的光学常数.根据菲涅耳系数矩阵法计算了这种器件内的光电场分布,并计算了不同厚度的聚合物功能层的光子吸收数.同时,通过Onsager-Braun理论,分析了在无外加电场下聚合物功能层厚度对激子分离概率的影响.理论分析和实验结果证明:在特定的薄膜制备工艺下,器件结构为ITO/PEDOT/ P3HT:PC₆₀BM /LiF/Al时,聚合物功能层厚度在100 nm左右时,可以使器件的光子吸收数最大化,同时避免了激子分离概率的降低. 关键词： 光学常数 激子 聚合物太阳能电池     

发光层厚度对联苯乙烯衍生物蓝色有机发光器件性能的影响

本文制备了联苯乙烯衍生物(4, 4'-bis(2, 2'-diphenylvinyl)-1, 1'-biphenyl, DPVBi) 为发光层的蓝色有机电致发光器件. 器件性能随发光层厚度变化而变. 在DPVBi厚度为10---50 nm范围内, 同样电流密度下器件亮度及效率随DPVBi厚度增加先增后减, 40 nm时最佳, 最高亮度达到15840 cd/m², 最高外量子效率达到3.2%, 器件色坐标(Commission Internationale de l'Eclairage (CIE) co-ordinates) 为(0.15, 0.15). DPVBi厚度超过40 nm时器件发光光谱出现红移而致色度变差, 其原因可归于微腔效应所致. 同时, 通过实验结果分析表明DPVBi中激子扩散长度位于20---30 nm范围.     

厚度模压电超声换能器无源声学材料研究进展*

厚度模压电超声换能器作为超声波发射、接收以及电信号间转换的载体,是超声成像与检测系统的核心器件,一般由压电层、匹配层和背衬层3部分组成。超声换能器的性能一定程度上决定着整体超声设备的性能,影响了其在工业、医学、军事等领域的应用。该换能器的关键性能指标(带宽、灵敏度)除了受到压电层的影响,还与匹配层、背衬层等无源声学材料的设计密切相关。该文综述了近年来厚度模压电超声换能器无源声学材料(匹配层、背衬层和声透镜)的研究进展,提出了当前该类材料面临的难题和解决途径,并对其未来发展方向进行了展望。     

氧化锌掺铝绒面薄膜在有机光伏电池中的应用

目前有机光伏电池的吸光活性层电学传输特性和光学吸收特性的不匹配是制约其能量转换效率提升的主要原因之一. 通过陷光结构对入射光进行调控, 提高电池对光的约束和俘获能力从而达到“电学薄”和“光学厚”的等效作用, 是解 决有机光伏电池电学和光学不匹配的有效手段. 本文采用湿法刻蚀技术获得了系列时间梯度的绒面氧化锌掺铝薄膜, 并将其作为有机光伏电池的入射陷光电极, 显著增强了电池的光学吸收. 研究发现, 当使用浓度0.5%的稀HCL腐蚀30 s后的氧化锌掺铝薄膜作为入射电极后, 电池的光电性能和效率显著增强. 基于此绒面电极电池的电流密度比平面结构的电池提高了8.17%, 效率改善了11.29%. 通过对绒面电极表面的修饰处理, 实现了电极与光活性层之间良好的界面接触, 从而减小了对电池的开路电压和填充因子的影响.     

电场诱导空穴注入缓冲层PEDOT：PSS取向对OLED发光性能的影响

实验中以PEDOT:PSS在ITO基片上旋涂作为空穴传输层,并且在旋涂PEDOT:PSS的过程中在与ITO玻璃平面垂直的方向施加一个诱导聚合物取向的高压电场,试验着重研究了所加电场强度对双层器件:ITO/PEDOT:PSS/MEH-PPV/Al器件性能的影响。测试结果表明,旋涂时所加电场的大小对器件的发光强度和起亮电压都有明显的影响。随着所加电场的增大,器件发光强度明显增加,起亮电压减小。由此表明:在高电场作用下,聚合物分子链沿电场方向发生了取向,而且随着电场增强这种取向作用会表现得越明显,并且在PEDOT:PSS膜表层会形成一个梯度变化的PSS聚集,使得从ITO到MEH-PPV的功函数逐渐上升,降低空穴注入势垒,增强了空穴的注入效率。     

MoO3为缓冲层的高效非掺杂蓝色有机发光二极管

以典型蓝色发光材料-联苯乙烯衍生物(4,4’-bis(2,2’-diphenylvinyl) -1,1’-biphenyl,DPVBi)为发光层,采用MoO3为阳极缓冲层制备了结构简单的非掺杂型蓝色有机电致发光器件.在电流密度为20 mA/cm2、MoO3缓冲层厚度为0.5 nm对器件效率约为无缓冲层器件效率的18倍,...     

基于Al_2O_3/MoO_3复合阳极缓冲层的倒置聚合物太阳能电池的研究

采用旋涂Al_2O_3前驱体溶液和低温退火的方法在活性层上形成Al_2O_3薄膜,并与MoO_3结合形成Al_2O_3/MoO_3复合阳极缓冲层,制备了以聚3-己基噻吩:[6.6]-苯基-C_(61)-丁酸甲酯(P3HT:PC_(61)BM)为活性层的倒置聚合物太阳能电池,并通过改变Al_2O_3前驱体溶液的浓度来分析复合阳极缓冲层对器件性能的影响.结果发现,Al_2O_3/MoO_3复合阳极缓冲层能有效调控倒置聚合物太阳能电池的光电性能及其稳定性.当Al_2O_3前驱体溶液的浓度为0.15%时,器件光伏性能达到最优值,与MoO_3单缓冲层的器件相比,光电转换效率(PCE)由3.85%提高到4.64%;经过80天老化测试后,具有复合阳极缓冲层的器件PCE保留为初始值的76%,而单缓冲层的器件PCE已经下降到50%以下.器件性能得到改善的原因是Al_2O_3/MoO_3复合阳极缓冲层增强了倒置太阳能电池器件阳极对空穴的收集能力,同时钝化了器件活性层,从而提升了太阳能电池器件的光伏性能及其稳定性.     

Bathocuproine/Ag复合电极对于聚合物光伏器件效率和稳定性的影响

采用Bathocuproine/Ag (BCP/Ag)复合电极代替Ca/Al复合电极, 制备PTB7:PC71BM 作为光敏层的聚合物光伏器件, 并通过改变BCP薄膜厚度来研究BCP/Ag复合电极对于器件光电转换器和稳定性的影响. 研究发现: 在光敏层和金属电极之间插入BCP修饰层后, 器件性能得到了显著的改善, 在BCP厚度为5 nm时, 器件的效率达到了6.82%, 且略高于Ca/Al复合电极的器件效率; 相比于采用Ca/Al复合电极的器件, BCP/Ag复合电极增大了器件的短路电流和外量子效率, 使器件效率得到提高; 同时器件的稳定性得到了显著的改善, BCP/Ag 复合电极器件的衰减速率几乎和未插入BCP的器件衰减速率相同, 相对于Ca/Al复合电极器件大幅提高.     

基底温度对喷涂技术制备大面积有机太阳能电池性能的影响

以聚3-己基噻吩（P3HT）和富勒烯衍生物（PCBM）体系的有机太阳能电池器件为基础,采用喷涂法制备了有机太阳能电池的空穴传输层和有机功能层,研究了基底温度对薄膜的形貌和器件性能的影响,并采用喷涂技术制备了一面积为11.2 cm²的大面积有机太阳能电池器件。研究发现,随着基底温度的升高,薄膜的粗糙度下降,吸收率提高,当基底温度为130 ℃时器件的性能最优,面积为25 mm²的器件的能量转换效率为2.09%。将多个独立的小面积电池进行串联和并联,制备了有效面积为11.2 cm²的大面积有机太阳能电池组件,其能量转换效率为1.83%,在面积增大44.8倍的情况下,效率仅损失不到13%。     

Improved performance of polymer solar cells by using inorganic,organic, and doped cathode buffer layers

The interface between the active layer and the electrode is one of the most critical factors that could affect the device performance of polymer solar cells. In this work, based on the typical poly(3-hexylthiophene):[6,6]-phenyl C61-butyric acid methyl ester(P3HT:PCBM) polymer solar cell, we studied the effect of the cathode buffer layer(CBL) between the top metal electrode and the active layer on the device performance. Several inorganic and organic materials commonly used as the electron injection layer in an organic light-emitting diode(OLED) were employed as the CBL in the P3HT:PCBM polymer solar cells. Our results demonstrate that the inorganic and organic materials like Cs_2CO_3, bathophenanthroline(Bphen), and 8-hydroxyquinolatolithium(Liq) can be used as CBL to efficiently improve the device performance of the P3HT:PCBM polymer solar cells. The P3HT:PCBM devices employed various CBLs possess power conversion efficiencies(PCEs) of 3.0%–3.3%, which are ca. 50% improved compared to that of the device without CBL. Furthermore, by using the doped organic materials Bphen:Cs_2CO_3 and Bphen:Liq as the CBL, the PCE of the P3HT:PCBM device will be further improved to 3.5%, which is ca. 70% higher than that of the device without a CBL and ca. 10% increased compared with that of the devices with a neat inorganic or organic CBL.     

复合阴极缓冲层Alq_3∶CsF对CuPc/C_(60)电池性能的影响

通过Alq_3∶CsF复合阴极缓冲层来优化CuPc/C_(60)有机小分子太阳能电池的性能。当Alq_3∶CsF厚度为5nm,CsF的掺杂比例为4%时,加入复合阴极缓冲层器件较Alq_3阴极缓冲层器件的能量转化效率提高了49%,到达0.76%,并且在室温、大气的条件下,器件的稳定性也得到了保持,与未加阴极缓冲层的器件相比,半衰期提高了6倍,达到9.8h。通过紫外-可见吸收、外量子效率和单载流子传输器件等研究了器件效率改善的主要原因是掺入CsF后,调节界面能级,改善了Alq_3的电子传输特性,提高了器件的短路电流和填充因子。比较分析复合阴极缓冲层器件于空气中放置不同的时间的电流电压曲线,表明Alq_3∶CsF可以保持Alq_3的良好稳定性,可以很好地阻挡氧气与水分的扩散,提高器件的寿命。     

An Innovative Multiple-layer Electro-optical Q-switch

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A comparative study of electrode effects on the electrical and luminescent characteristics of Alq3/TPD OLED: Improvements due to conductive polymer (PEDOT) anode

The performance of organic light emitting device (OLED) structures, based on identically fabricated Alq₃/TPD active regions, with various anode and cathode electrode structures are compared, and performance differences related to the different anode structure. The best performance was achieved with a conductive polymer, 3,4-polyethylenedioxythiopene-polystyrenesultonate (PEDOT), used as an anode layer, yielding a brightness of 1720 cd/m² at 25 V, a turn-on voltage of 3 V, and electroluminescence (EL) efficiency and external quantum efficiency of 8.2 cd/A and 2%, respectively, at a brightness of 100 cd/m² and 5 V. Compared to a baseline device (TPD/Alq₃/Al), PEDOT anodes substantially reduce the turn-on voltage and made current injection almost linear after turn-on, whiles devices incorporating a LiF and CuPc layers significantly improved device efficiency while slightly improving turn-on voltage and maintaining superlinear I-V injection. This is attributed to the reduced barrier at the organic-organic interface in PEDOT, the ‘ladder’ effect of stepping the band offset over several interfaces, and the favorable PEDOT film morphology. The benefit of the PEDOT anode is clearly seen in the improvement in device brightness and the high external quantum efficiency obtained.     

Novel BeZnO Based Self‐Powered Dual‐Color UV Photodetector Realized via a One‐Step Fabrication Method

In this work, we fabricated a novel BeZnO based dual‐color UV photodetector through a one‐step electron beam evaporation of asymmetric Ti/Au pair. A dual‐phase BeZnO alloy film with dual bandgap of ∼3.5 eV (∼355 nm) and ∼4.6 eV(∼270 nm) was artfully utilized as active layer to realize dual‐color response. This photodetector shows a noticeable photovoltaic characteristic and can be utilized as an excellent self‐powered device. The device exhibits two cut‐off response wavelengths at ∼275 nm and ∼360 nm under zero bias, which are corresponding to UVA and UVC region, respectively. According to the dynamic response spectra under UV radiation, the device presents excellent stability and reproducibility without external power supply. In addition, the device has an ultrafast response speed, with a rise time of ∼35 μs and a decay time of ∼880 μs. Finally, a physical model based on energy band theory is proposed to demonstrate that the self‐powered behavior is attributed to the asymmetric Schottky barrier heights caused by the hole‐trapping process occurred in electrode/BeZnO interface. To the best of our knowledge, this is the first report on BeZnO based self‐powered UV photodetector. Our findings demonstrate a novel and facile route to realize high performance self‐powered UV photodetectors for multipurposes.     

Transducers in medical ultrasound: Part Two. Vibration modes, matching layers and grating lobes

The performance of transducers used for medical diagnosis depends to a great extent on matching layer, backing impedance and geometry of the active surface. In this paper special attention is given to the element vibrational modes, the optimum matching, the grating lobe and change of the real acoustic impedance into an imaginary impedance as a function of the product of the width and wavelength. Grating lobes on the echo image and the effect of a mismatch of the matching layer are illustrated. Suggestions are made for the design of linear and phased array transducers considering the above-mentioned aspects.     

非掺杂型高效绿色磷光有机电致发光器件

在空穴传输层TCTA与电子传输层TPBi之间引入磷光染料Ir(ppy)3超薄发光层,制备了结构为ITO/MoO_3(2 nm)/NPB(40 nm)/TCTA(10 nm)/Ir(ppy)3(xnm)/TPBi(40 nm)/LiF(1 nm)/Al(80 nm)的非掺杂磷光有机电致发光器件。通过调控非掺杂发光层的厚度,详细研究了Ir(ppy)3层厚度对器件性能的影响。实验结果表明,当非掺杂发光层厚度为0.2 nm时,器件的性能最好,器件的亮度、效率和外量子效率分别达到26 350 cd·m~(-2)、42.9 cd·A~(-1)和12.9%。研究结果表明,采用超薄的非掺杂发光层可以简化器件结构和制备工艺,获得高效率的OLED器件。     

Dynamics of excitons and carriers at the NPB/C60 interface by transient photocurrents

The transient photocurrent (TPC) technique was performed to explore the dynamics of excitons and carriers at organic active layer/buffer layer interfaces. A special device with ITO/PEIE/NPB/C₆₀/Al structure was designed to study the interfacial processes at the NPB/C₆₀ interface. An external electrical field was provided to neutralize the built-in electrical field of the device. Interestingly, a new phenomenon was observed, wherein the polarity of the TPC changed from negative to positive under an external electrical field. The initial negative signal was ascribed to exciton separation by the built-in field in C₆₀, and the subsequent positive signal can be attributed to the diffusion of electrons that accumulate at the NPB/C₆₀ interface. TPC measurements shown that further increasing the external electrical field causes polarity to change twice. Analyzing the two changes in polarity revealed that the NPB did not only extract holes from C₆₀ but also provided an effective interface for exciton dissociation.     

Ion Effects on the Performance of the Single-Layer Organic Light-Emitting Devices Based on Adding Salt Additives

The single-layer organic light-emitting devices provide a promising way for low-cost, large-area displays. Iridium (III) complex may play an important role to achieve this target due to its unique ionic characteristics. To achieve high-performance single-layer devices, blending the salt additives into the active layer is an effective strategy. However, the effects of different cation and anion additives on the device's performance are still unclear. Herein, the single-layer light-emitting devices are fabricated by using solution-processed iridium (III) complex mixed with various molecular salts. It is implied in the results that the improvement of the device luminescence and recombination efficiency is owing to the enhanced carrier injection and improved carrier balance in the emitting layer by the ion-additive-induced electrical double layer at the interface. The smaller cation can improve the carrier injection of the device more efficiently due to the stronger ion mobility and the anion with the smaller association coefficient shows a better device performance since the stronger dissociation ability of the ions can lead to a better ion migration ability. In addition, the introduction of poly (methyl methacrylate) into the active film can improve the single-layer device performances by reducing leak current in bulk.     

基于表面等离子体共振增强的硅基锗金属-半导体-金属光电探测器的设计研究

金属-半导体-金属光电探测器的光栅结构可激发表面等离子体, 有效增强探测器的吸收. 为深入研究器件结构对于表面等离子体的激发及共振增强的影响, 本文提出了一种具有超薄有源层的硅基锗金属-半导体-金属光电探测器的设计方法. 采用时域有限差分的方法详细分析了光栅周期、光栅厚度、 光栅间距及有源层厚度对于表面等离子体共振增强器件性能的影响, 通过仿真模拟获得了器件的最佳结构, 详细地分析了各个界面激发的表面等离子体及其共振模式对于光谱吸收增强的机理. 仿真结果表明, 有源层锗的厚度为400nm的超薄器件在通信波段具有较高的吸收, 尤其在1550nm波长处器件的归一化的光谱吸收率可以高达53.77%, 增强因子达7.22倍. 利用共振效应能够极大地提高高速器件的光电响应, 为解决光电探测器响应度与响应速度之间的相互制约关系提供了有效途径. 关键词： 表面等离子体 锗探测器 时域有限差分仿真     

Novel vertical stack HCMOSFET with strained SiGe/Si quantum channel

A novel vertical stack heterostructure CMOSFET is investigated, which is structured by strained SiGe/Si with a hole quantum well channel in the compressively strained Si量子信道 异质结构 CMOSFET 量子论 量子阱strained SiGe/Si, quantum well channel, heterostructure CMOSFET, poly-SiGe gateProject supported by the Preresearch from National Ministries and Commissions (Grant Nos 51408061104DZ01, 51439010904DZ0101).2/2/2006 12:00:00 AM2006-01-022006-03-16A novel vertical stack heterostructure CMOSFET is investigated, which is structured by strained SiGe/Si with a hole quantum well channel in the compressively strained Sil-xGex layer for p-MOSFET and an electron quantum well channel in the tensile strained Si layer for n-MOSFET. The device possesses several advantages including： 1） the integration of electron quantum well channel with hole quantum well channel into the same vertical layer structure; 2） the gate work function modifiability due to the introduction of poly-SiGe as a gate material; 3） better transistor matching; and 4） flexibility of layout design of CMOSFET by adopting exactly the same material lays for both n-channel and p-channel. The MEDICI simulation result shows that p-MOSFET and n-MOSFET have approximately the same matching threshold voltages. Nice performances are displayed in transfer characteristic, transconductance and cut-off frequency. In addition, its operation as an inverter confirms the CMOSFET structured device to be normal and effective in function.