Free residual DC voltage for nematic liquid crystals on solution-derived lanthanum tin oxide film

We present the liquid crystal (LC) alignment properties of solution-derived lanthanum tin oxide (LaSnO) films cured at various temperatures and exposed to ion-beam (IB) irradiation. Using a solution process, LaSnO films were deposited on the indium-tin-oxide glass substrates and IB irradiation was used as an alignment method. Homogeneous and uniform LC alignment was achieved and observed by cross-polarised optical microscopy. Pre-tilt angle results with low standard deviation supported the notion of uniform LC alignment. The LaSnO film cured at 300°C showed nearly zero capacitance–voltage hysteresis. The change of the surface morphology of the LaSnO film due to IB irradiation was observed by atomic force microscopy. The effects of IB irradiation on the LC alignment layer were further demonstrated by X-ray photoelectron spectroscopy. The strong IB irradiation broke the metal–oxide bonds present, which in turn induced an increased number of oxygen vacancies on the whole surface. Uniform LC alignment was attributed to surface reformation and van der Waals forces.     

Homogeneous alignment of liquid crystals on low-temperature solution-derived gallium oxide films via IB irradiation method

In this paper, solution-derived gallium oxide (GaO) films are fabricated for the homogeneous alignment of liquid crystals (LCs) after an ion-beam (IB) irradiation process. GaO thin films are prepared under a variety of temperatures and different IB irradiation intensities, and the physicochemical performances of the fabricated GaO thin films are analysed using a UV-vis spectrometer, an atomic force microscope, and X-ray photoelectron spectroscopy. A higher transmittance of 85.40% from GaO thin film is obtained compared with that of polyimide (PI) film (83.52%), which indicates the feasibility for a GaO thin layer to substitute for a conventional PI layer as an alignment layer. LCs are found to align on the GaO thin film after pre-baking at 100°C and homogeneous and uniform low-IB intensity irradiation. We also determined the electro-optical (EO) characteristics of the twisted nematic (TN) cells fabricated with GaO thin layers and found them to be similar to those of cells fabricated with PI layers. Overall, GaO films achieved via the IB irradiation method are promising LC alignment layers due to the method’s low-temperature solution-derived process.     

Homogeneous liquid crystal orientation on ion beam exposure TiO2 surfaces depending on an anisotropic dipole field

We studied homogeneous liquid crystal (LC) alignment properties on ion-beam (IB) irradiated TiO₂ films deposited by the electron beam evaporation method. Stable homogeneous LC alignment on a TiO₂ surface resulted from IB irradiation energy over 1800 eV. X-ray photoelectron spectroscopy analyses showed that Ti⁴⁺ 2p_3/2 and Ti⁴⁺ 2p_1/2 peaks were increased with increasing IB energy. Assuming that the increased peaks produced anisotropy dipole fields in the direction of the IB exposure process, we confirmed that the increasing IB energy induced strengthened the surface energy for entirely clear and stable LC molecule orientation. The voltage-transmittance characteristics of the twisted-nematic cell on the TiO₂ surface indicate that the TiO₂ film has potential for use as the LC alignment layer.     

溅射功率对氧化锡薄膜结构和电化学性能的影响

应用射频磁控溅射技术在硅基底上制备氧化锡薄膜,着重研究溅射功率对薄膜结构和电化学性能的影响.XRD,SEM分析及恒电流充放电测试表明,随着溅射功率的增大,薄膜的结晶程度提高;生长速率和晶粒尺寸增大;电池的贮锂容量减少,且首圈不可逆容量损失增大.溅射功率对薄膜的电化学性能有较大的影响.     

IR laser photodeposition of a-Fe/Si films developing nanograins of ferrisilicate, iron disilicide and rare hexagonal iron upon annealing

IR laser-induced gas-phase photolysis of Fe(CO)(5)-SiH(4) mixtures occurs as SiH(4)-photosensitized decomposition of Fe(CO)(5) is accelerated by products of this decomposition and it results in deposition of amorphous Si/Fe nanocomposite films. Analyses of the deposited and subsequently annealed solid films were made by FTIR, Raman and X-ray photoelectron spectroscopy, X-ray diffraction and electron microscopy. The deposited films are amorphous, contain crystalline nanostructures of iron silicide FeSi(2) and undergo atmospheric oxidation in topmost layers to iron oxide and hydrogenated silicon oxide. Upon annealing they develop nanocrystalline structures of ferrisilicate, Fe(1.6)SiO(4), carbon-encaged iron disilicide, FeSi(2), and very rare hexagonal (high-pressure) Fe surviving at ambient conditions. The mechanism of formation of these nanostructures is discussed in terms of gas-phase and solid-phase reactions.     

磁控溅射制备的铜钒氧化物薄膜及其电化学性能

采用射频磁控溅射技术在硅基底上分别制备了无掺杂和掺杂Cu的氧化钒薄膜. X射线衍射(XRD)分析和扫描电子显微镜(SEM)观察表明, 无掺杂的薄膜为多晶V2O5, 掺杂Cu的薄膜为非晶态. X射线光电子能谱(XPS)分析结果表明, 掺杂Cu的薄膜为铜钒氧化物膜, 其中Cu离子表现为+2价, V离子为+4与+5价的混合价态. 随着Cu掺杂量的增大, +4价V的含量增加. 电化学测试结果表明, V2O5薄膜在掺杂Cu以后其放电容量有显著的提高, 其中Cu2.1VO4.4薄膜在100次循环后容量还保持为83.4 μA·h·cm-2·μm-1, 表现出较高的放电容量和较好的循环性能.     

Twisted nematic LC mode with high electro-optical performance and high thermal endurance formed using IB-irradiated poly(methyl methacrylate) as an alignment layer

We obtained homogeneously aligned liquid crystals (LCs) on ion beam (IB) irradiated poly(methyl methacrylate) (PMMA) by controlling the IB energy. We then examined the LC alignment state using polarized optical microscopy and conducted thermal stability testing. We obtained homogeneous LC alignment at IB energies above 1,400 eV, indicating that strong IB energy facilitates the alignment of LCs on the PMMA surface. This surface was analyzed by atomic force microscopy, and the contact angles (CAs) were measured to elucidate the mechanism of LC alignment. The increased surface energy strengthened the van der Waals interaction between the surface and LCs, thereby inducing stable, homogeneous LC alignment. Electro-optical (EO) characteristics were measured using twisted nematic (TN) LC mode. Compared to LC cells with conventionally used rubbed polyimide (PI), the LC cells with IB-irradiated PMMA exhibited higher thermal budgets and good electro-optical characteristics. These new LC cells have promising potential for advanced LC displays.     

Liquid crystal aligning capabilities on surface-reformed indium-doped zinc oxide films via ion-beam exposure

We investigated the characteristics of a solution-processed indium-doped zinc oxide (In:ZnO) film formed via ion-beam (IB) irradiation as a liquid crystal (LC) alignment layer. The In:ZnO film was deposited using solution processing and cured at various temperatures. Uniform LC alignment was observed at all curing temperatures in cross-polarised optical microscopy images. A regular pre-tilt angle supported these results and showed homogeneous LC alignment. Several surface analyses were conducted to evaluate the effect of IB irradiation on the In:ZnO film surface. X-ray diffraction analysis showed an amorphous structure both before and after IB irradiation, and physical surface reformation was observed using atomic force microscopy. Root mean square surface roughness was reduced and a smooth surface was achieved after IB irradiation. X-ray photoelectron spectroscopy was used to detect chemical surface reformation. It was found that the IB irradiation broke the metal-oxide bonds and increased the occurrence of oxygen vacancies, which affected the van der Waals forces between the LC molecules and the In:ZnO film surface. Electrical performance was observed to identify the possibility of using the In:ZnO film in LC applications. Enhanced electro-optical performance was measured and zero residual DC voltage which was verified using a capacitance-voltage curve was achieved.     

Alignment of liquid crystals on solution-processed HfZnO films via ion beam irradiation

Liquid crystal (LC) alignment layers were prepared by fabricating solution-processed HfZnO films, annealing them, and treating them with ion beam (IB) irradiation, and the effect of annealing temperature upon the resulting film properties was studied. Homogeneous LC alignment was achieved on IB-irradiated HfZnO films. Topographical changes were observed from field-emission scanning electron microscopy as annealing temperature increased. X-ray photoelectron spectroscopy analysis showed that IB irradiation resulted in oxidation of HfZnO surfaces, which caused the LCs to be oriented more uniformly. The best electro-optical characteristics observed corresponded to the annealing temperature of 200°C. The low optimal annealing temperature for fabricating the HfZnO films suggested that this material has remarkable potential for LCD applications.     

Effects of plasma treatments on correlation between chemical structures of DLC films and liquid crystal alignment

In an effort to obtain an improved liquid crystal (LC) alignment layer for liquid crystal display device applications, amorphous diamond‐like carbon thin films were deposited on ITO‐coated glass substrates by an rf magnetron sputtering technique at room temperature and then treated with plasma in various atmospheres. The polarized images and pretilt angles of the LC cells showed that LC alignment was enhanced by post‐plasma treatments of the films. In Raman and X‐ray photoelectron spectroscopy spectra of the films, an increase in the fraction of sp²‐bonding was observed after post‐plasma treatments of the films. In particular, H₂ plasma‐treated film had the largest fraction of sp²‐bonding at the film surface and showed much improved alignment capabilities. These results suggest that π‐bondings of the sp²‐structure at the surface rather than the bulk play an important role in LC alignment.     

Solution-processed anodes from layer-structure materials for high-efficiency polymer light-emitting diodes

The development of low-cost, large-area electronic applications requires the deposition of active materials in simple and inexpensive techniques at room temperature, properties usually associated with polymer films. In this study, we demonstrate the integration of solution-processed inorganic films in light-emitting diodes. The layered transition metal dichalcogenide (LTMDC) films are deposited through Li intercalation and exfoliation in aqueous solution and partially oxidized in an oxygen plasma generator. The chemical composition and thickness of the LTMDC and corresponding transition metal oxide (TMO) films are investigated by X-ray photoelectron spectroscopy. The morphology and topography of the films are studied by atomic force microscopy. X-ray powder diffraction is used to determine the orientation of the LTMDC film. Finally, the LTMDC and their corresponding oxides are utilized as hole-injecting and electron-blocking materials in polymer light-emitting diodes with the general structure ITO/LTMDC/TMO/polyfluorene/Ca/Al. Efficient hole injection and electron blocking by the inorganic layers result in outstanding device performance and high efficiency.     

Homogeneous liquid crystal alignment on poly(vinylidene fluoride-trifluoroethylene) films subjected to ion-beam irradiation

We demonstrate homogeneous and uniform liquid crystal (LC) alignment on poly(vinylidene fluoride-trifluoroethylene) [PVDF-TrFE] films using ion-beam (IB) irradiation and a performance improvement of twisted nematic (TN) cells using IB-irradiated PVDF-TrFE films. Spontaneous ferroelectricity of the PVDF-TrFE films was modified by IB irradiation, which affected the LC alignment properties. The variation in the pre-tilt angles of the LC molecules on the IB-irradiated PVDF films is attributed to surface reformation, including defluorination and oxidation because the pre-tilt angles of LC molecules can be controlled by adjusting the fluorine content. The results of contact angle measurements supported this phenomenon. A 58% reduction in the switching voltage was observed for TN cells, indicating that the IB-irradiated PVDF-TrFE films are a promising candidate for use as an alignment layer.     

Super fast switching and low operating of liquid crystals sandwiched between ion beam-spurted ITO thin layers

Ion beam (IB)-spurted indium tin oxide (ITO) thin layers are used to align liquid crystals (LC) with a lower driving voltage. During IB spurting process, the microcrystals transforming to large crystals of ITO is intimated by the change of In (3d), Sn (3d) and O (1s) core level in XPS spectra and the surface topology modifications in SEM and AFM images, and IB-spurted ITO thin layers are comparably transparent and conductive compared with ITO thin layers. The increased interactions between LC and IB-spurted ITO thin layers together with the roughed surface topology of ITO thin layers are the main causes for LC alignment. The fast response and distribution of electrical dipoles to external voltage in LC causes LC’s extremely low threshold voltage drive; in addition, LC directly aligned on ITO thin layers free from alignment layers shield effect further decreases LC’s threshold voltage. 1.8-keV IB-spurted ITO thin layers are more appropriate to align LC with the threshold voltage of 0.4853 V and the rising time of 0.237 ms.     

Formation of intra-island grain boundaries in pentacene monolayers

To assess the formation of intra-island grain boundaries during the early stages of pentacene film growth, we studied sub-monolayers of pentacene on pristine silicon oxide and silicon oxide with high pinning centre density (induced by UV/O(3) treatment). We investigated the influence of the kinetic energy of the impinging molecules on the sub-monolayer growth by comparing organic molecular beam deposition (OMBD) and supersonic molecular beam deposition (SuMBD). For pentacene films fabricated by OMBD, higher pentacene island-density and higher polycrystalline island density were observed on UV/O(3)-treated silicon oxide as compared to pristine silicon oxide. Pentacene films deposited by SuMBD exhibited about one order of magnitude lower island- and polycrystalline island densities compared to OMBD, on both types of substrates. Our results suggest that polycrystalline growth of single islands on amorphous silicon oxide is facilitated by structural/chemical surface pinning centres, which act as nucleation centres for multiple grain formation in a single island. Furthermore, the overall lower intra-island grain boundary density in pentacene films fabricated by SuMBD reduces the number of charge carrier trapping sites specific to grain boundaries and should thus help achieving higher charge carrier mobilities, which are advantageous for their use in organic thin-film transistors.     

Confined high-pressure chemical deposition of hydrogenated amorphous silicon

Hydrogenated amorphous silicon (a-Si:H) is one of the most technologically important semiconductors. The challenge in producing it from SiH(4) precursor is to overcome a significant kinetic barrier to decomposition at a low enough temperature to allow for hydrogen incorporation into a deposited film. The use of high precursor concentrations is one possible means to increase reaction rates at low enough temperatures, but in conventional reactors such an approach produces large numbers of homogeneously nucleated particles in the gas phase, rather than the desired heterogeneous deposition on a surface. We report that deposition in confined micro-/nanoreactors overcomes this difficulty, allowing for the use of silane concentrations many orders of magnitude higher than conventionally employed while still realizing well-developed films. a-Si:H micro-/nanowires can be deposited in this way in extreme aspect ratio, small-diameter optical fiber capillary templates. The semiconductor materials deposited have ~0.5 atom% hydrogen with passivated dangling bonds and good electronic properties. They should be suitable for a wide range of photonic and electronic applications such as nonlinear optical fibers and solar cells.     

等离子体增强磁控溅射沉积碳化硅薄膜的化学结构与成膜机理

以CH4和Ar为工作气体,单晶硅为溅射靶,通过微波电子回旋共振(MW-ECR)等离子体增强非平衡磁控溅射方法在不同的CH4流量和沉积温度下制备了a-Si1-xCx∶H薄膜.利用傅里叶变换红外(FT-IR)光谱,X光电子能谱(XPS)和纳米硬度仪等表征方法研究不同沉积参数下薄膜的化学结构、化学配比和硬度的变化.结果表明:室温(25℃)下随CH4流量由5cm·3min-1增加到45cm3·min-1(标准状态)时,薄膜中Si—CH2键,C—H键含量逐渐增加,Si—H键变化不明显;膜中C原子百分比由28%增至76%,Si原子百分比由62%降至19%.当CH4流量为15cm3·min-1时,随沉积温度的升高,薄膜中Si和C原子百分比含量分别为52%和43%,且基本保持不变;膜中Si—H键和C—H键转化为Si—C键,薄膜的显微硬度显著提高,在沉积温度为600℃时达到29.7GPa.根据分析结果,提出了室温和高温下a-Si1-xCx:H薄膜生长模型.     

Precise Control of Metal Oxide Thin Films Deposition in Magnetron Sputtering Plasmas for High Performance Sensing Devices Fabrication

Magnetron sputtering deposition is a widely used technique to deposit thin film precisely at nanoscale level. During the deposition of metal oxide thin films, reactive oxygen gas is introduced into the deposition chamber. Pure metal and metal oxide materials can be used as sputter target, although the simplest way is by using a pure metal target. In such reactive process, the effect of target poisoning significantly influence the deposition process and the growth mechanisms of metal oxide thin films became very complex. In general, external parameters such as discharge power, working pressure, reactive gases ratio and substrate temperature are used to optimize the properties of deposited thin films. Then, ex-situ analyses such as scanning electron microscope and X-ray diffraction analysis are performed to obtain the optimized parameter. Sample depositions and ex-situ analyses consume time to achieve the goal through try and error. In this article, in-situ plasma diagnostics are reviewed focusing on an optical emission spectroscopy to precisely control and investigate the sputter target poisoning effect during the deposition of metal oxide thin films. The emission of atomic lines from several metal and oxygen atoms were used to discuss the deposition mechanisms and their correlation with the deposited thin films was observed. Finally, the deposited metal oxide thin films were proposed and tested for several applications such as gas sensor and frequency selective surface glass.     

The role of physical and chemical properties of Pd nanostructured materials immobilized on inorganic carriers on ion formation in atmospheric pressure laser desorption/ionization mass spectrometry

Fundamental parameters influencing the ion‐producing efficiency of palladium nanostructures (nanoparticles [Pd‐NP], nanoflowers, nanofilms) during laser irradiation were studied in this paper. The nanostructures were immobilized on the surface of different solid inorganic carrier materials (porous and mono‐crystalline silicon, anodic porous aluminum oxide, glass and polished steel) by using classical galvanic deposition, electroless local deposition and sputtering. It was the goal of this study to investigate the influence of both the nanoparticular layer as well as the carrier material on ion production for selected analyte molecules. Our experiments demonstrated that the dimensions of the synthesized nanostructures, the thickness of the active layers, surface disorders, thermal conductivity and physically or chemically adsorbed water influenced signal intensities of analyte ions during surface‐assisted laser desorption/ionization (SALDI) while no effects such as plasmon resonance, photoelectric effect or catalytic activity were expected to occur. Excellent LDI abilities were seen for Pd‐NPs immobilized on steel, while Pd nanoflowers on porous silicon exhibited several disadvantages; viz, strong memory effects, dependency of the analytical signal on amount of physically and chemically adsorbed water inside porous carrier, reduced SALDI activity from unstable connections between Pd and semiconductor material, decrease of the melting point of pure silicon after Pd immobilization and resulting strong laser ablation of metal/semiconductor complex, as well as significantly changed surface morphology after laser irradiation. The analytical performance of Pd‐NP/steel was further improved by applying a hydrophobic coating to the steel surface before galvanic deposition. This procedure increased the distance between Pd‐NPs, thus reducing thermal stress upon LDI; it simultaneously decreased spot sizes of deposited sample solutions. Copyright © 2014 John Wiley & Sons, Ltd.     

Effect of the cadmium ion source on the structural and optical properties of chemical bath deposited CdS thin films

The chemical bath deposition (CBD) technique has been successfully used to deposit cadmium sulphide from cadmium chloride and cadmium acetate as the cadmium ion source and thiourea as the sulphur source on both glass microscope slide and indium tin oxide coated glass substrates. Various properties of the films such as surface morphology, crystallinity, optical properties and resistivitiy have been investigated. XRD patterns reveal that the CdS films deposited from cadmium chloride have an hexagonal structure. Their preferential orientation changes from (002) to (100) with the thermal annealing. Films deposited from cadmium acetate are amorphous but improve their crystallinity with annealing. SEM analysis shows that the grains of the as deposited films are randomly shaped and appear to be bigger in the case of the CdS prepared from cadmium chloride. The optical transmission of the layers are in the 70–80 % range for wavelength above the band gap absorption which makes them more appropriate as window material in heterojunction solar cells.     

Liquid crystal alignment on ion-beam irradiated bismuth-doped tin oxide films and their application to liquid crystal displays

Uniform and defect-free homogeneous alignment of liquid crystal (LC) molecules on solution-derived bismuth-doped tin oxide (TBO) films has been achieved using ion-beam (IB) irradiation. We performed measurements and physicochemical analysis to verify and establish the cause of the successful LC alignment. In addition, we measured the electro-optical characteristics of twisted-nematic cells with IB-irradiated TBO films to explore the suitability of this material for liquid crystal displays (LCDs). The results indicate that this approach will allow the fabrication of high-performance enhanced LCD devices.