37 W 888-nm-pumped grown-together composite crystal YVO<Subscript>4</Subscript>/Nd:YVO<Subscript>4</Subscript>/YVO<Subscript>4</Subscript> oscillator at 1342 nm

We report on a continuous-wave Nd:YVO₄ oscillator at 1342 nm based on the combination of a grown-together composite crystal YVO₄/Nd:YVO₄/YVO₄ and the 888 nm diode-laser direct pumping for the first time. At the absorbed pump power of 102 W, a maximum average output power of 37.2 W at 1342 nm was obtained, corresponding to an optical-optical conversion efficiency of 36.5% and a high slope efficiency of 63.0%, respectively. To the best of our knowledge, this is the highest output power ever obtained for a 1342 nm Nd:YVO₄ oscillator.     

6.3 GHz Linearly Tuning Single-Frequency Nd:YVO<Subscript>4</Subscript> Laser

We propose a linearly frequency-tuning single-frequency Nd:YVO₄ laser. We achieve a single-frequency tuning operation with a tuning range of 6.3 GHz and a maximum power of 0.5 W at 1,064 nm by tilting a thin coated etalon and changing the voltage applied to an RTP crystal in a synchronous way. The laser is linearly tuned with a standard frequency variation of ～190 MHz. We estimate the average tuning speed to be 0.81 GHz/s. The tuning range obtained is more than three times the longitudinal mode spacing of the laser resonator.     

Diode-pumped Nd:LuVO<Subscript>4</Subscript>-Nd:YVO<Subscript>4</Subscript> laser at 492 nm with intracavity sum-frequency-mixing in LiB<Subscript>3</Subscript>O<Subscript>6</Subscript>

We present for the first time a Nd:YVO₄ laser emitting at 1064 nm intracavity pumped by a 916 nm diode-pumped Nd:LuVO₄ laser. A 809 nm laser diode is used to pump the Nd:LuVO₄ crystal emitting at 916 nm, a Nd:YVO₄ laser crystal was pumped at 916 nm and lased at 1064 nm. Intracavity sum-frequency mixing at 916 and 1064 nm was then realized in a LiB₃O₆ (LBO) crystal to reach the blue range. We obtained a continuous-wave output power of 216 mW at 492 nm under 19.6 W of incident pump power at 809 nm.     

Passively Q-switched laser operation in a composite Nd:YVO<Subscript>4</Subscript>/Nd:YVO<Subscript>4</Subscript>/Nd:YVO<Subscript>4</Subscript> crystal with a single-walled carbon nanotube saturable absorber

By using a piece of single-walled carbon nanotube saturable absorber, the performance of the passively Q-switched composite Nd:YVO₄ laser has been demonstrated for the first time. The maximum average output power and the shortest pulse width are 1220 mW and 103 ns at the incident pump power of 5.04 W for a 10% transmission of the output coupler. The highest pulse repetition rate of 415.6 kHz and the largest single-pulse energy of 2.94 μJ are also obtained. The composite Nd:YVO₄ crystal has more excellent laser performance than the normal Nd:YVO₄ crystal at 1064 nm.     

High-power passively Q-switched Nd:YVO<Subscript>4</Subscript> UV laser at 355 nm

We report on an efficient high-power passively Q-switched UV laser at 355 nm. We take into account the second threshold criterion and the thermal-lensing effect to design and realize a compact reliable passively Q-switched Nd:YVO₄ laser with Cr⁴⁺:YAG as a saturable absorber. At an incident pump power of 16.3 W, the average output power at 1064 nm reaches 6.2 W with a pulse width of 7 ns and a pulse repetition rate of 56 kHz. Employing the developed passively Q-switched laser to perform the extra-cavity harmonic generations, the maximum average output powers at 532 nm and 355 nm are up to 2.2 W and 1.62 W, respectively.     

Continuous-wave passively mode-locked Nd:YVO<Subscript>4</Subscript>/KTP green laser with a semiconductor saturable absorber mirror

A diode-pumped passively mode-locked low-doped Nd:YVO₄ green laser with a semiconductor saturable absorber mirror (SESAM) and an intracavity frequency-doubling KTP crystal is demonstrated. In order to efficiently release the thermal effect, a low-doped Nd:YVO₄ crystal with the Nd³⁺ concentration of 0.1 at % is employed as the gain medium. The maximum average output power of 3.1 W at 532 nm with a repetition rate of 102 MHz is obtained under the pump power of 25 W, corresponding to an optical conversion efficiency of 12.4%. The 532 nm mode locked pulse width is estimated to be approximately 6.1 ps.     

Quasi-three-level Nd:YVO<Subscript>4</Subscript> laser operation at 914 nm under 879 nm diode laser pumping

We present experimental investigation on quasi-three-level Nd:YVO₄ laser operation at 914 nm under 879 nm diode pumping directly into emitting level. A maximal output power of 3.0 W under an absorbed pump power of 13.4 W was got, corresponding to an optical conversion efficiency of 22.4% and a slope efficiency of 40.3%. To the best of our knowledge, this is the first report on a Nd:YVO₄ laser at 914 nm using rod-type single crystal as the gain medium and end pumped by diode directly into the emitting level.     

A comparative study on diode-pumped continuous wave Tm:Ho:YVO<Subscript>4</Subscript> and Tm:Ho:GdVO<Subscript>4</Subscript> lasers

In this paper, we presented experimental results concerning on the laser characteristics of two microchip lasers emitting in the 2 μm range, Tm:Ho:YVO₄ microchip laser and Tm:Ho:GdVO₄ microchip laser. At a heat sink temperature of 283 K, the maximum output power of Tm:Ho:YVO₄ laser and Tm:Ho:GdVO₄ laser is 47 and 34 mW under absorbed pump power of 912 mW, respectively. High efficiency can be achieved for both lasers at room temperature. Nevertheless, compared with Tm:Ho:GdVO₄ laser, Tm:Ho:YVO₄ laser can operate on single frequency with high power easily. At the heat sink temperature of 288 K, as much as 16.5 mW of 2052.3 nm single-longitudinal-mode (SLM) laser was achieved for Tm:Ho:YVO₄ laser. Under the same condition, only 8 mW of 2048.5 nm SLM laser was achieved for Tm:Ho:GdVO₄ laser.     

Diode-pumped Nd:YVO<Subscript>4</Subscript>/Nd:YLF laser at 488 nm

We present a laser architecture to obtain continuous-wave blue radiation at 488 nm. A 808 nm diode-pumped the Nd:YVO₄ crystal emitting at 914 nm. A part of the pump power was then absorbed by the Nd:YVO₄ crystal. The remaining was used to pump the Nd:YLiF₄ (Nd:YLF) crystal emitting at 1047 nm. Intracavity sum-frequency mixing at 914 and 1047 nm was then realized in a BiB₃O₆ (BiBO) crystal to reach the blue radiation. We obtained a continuous-wave output power of 339 mW at 488 nm with a pump laser diode emitting 18.3 W at 808 nm.     

Dual-wavelength laser operation at 1064 and 914 nm in two Nd:YVO<Subscript>4</Subscript> crystals

We present for the first time a dual-wavelength laser operation at 1064 and 914 nm in two NdYVO₄ crystals. A 879 nm laser diode is used to pump the first Nd:YVO₄ crystal emitting at 914 nm, and the second Nd:YVO₄ laser emitting at 1064 nm intracavity pumped at 914 nm. A total output power of 4.28 W at the two fundamental wavelengths was achieved at the absorbed pump power of 13.8 W. The M² values for 914 and 1064 nm lights at the maximum output power were found to be around 1.3 and 1.1, respectively.     

Compact diode-side-pumped Nd:YVO<Subscript>4</Subscript> laser in grazing-incidence configuration

The analysis of compact CW diode-side-pumped grazing-incidence-geometry Nd:YVO₄ laser designs is presented. An output power of 5 W (λ=1064 nm) was produced at 17 W of diode pump (conversion efficiency of 30%) in single transverse TEM₀₀ mode operation at high laser beam quality (M_x ²≈1.05 and M_y ²≈1.01). The resonator geometry was analyzed by applying generalized 4×4 matrix modeling of the spatial mode size, including the impact on the laser operation of cavity astigmatism and a thermal lens in the laser slab. The simplicity and compactness of the laser cavities allow their use for technological applications. Received: 31 July 2002 / Published online: 22 January 2003 RID="*" ID="*"Corresponding author. Fax: +44-20/7594-7744, E-mail: m.damzen@ic.ac.uk     

All-solid-state intracavity frequency-doubled Nd:Y<Subscript>0.36</Subscript>Gd<Subscript>0.64</Subscript>VO<Subscript>4</Subscript>-GdCa<Subscript>4</Subscript>O(BO<Subscript>3</Subscript>)<Subscript>3</Subscript> green laser under direct 880 nm pumping

We report a green laser at 532 nm generation by intracavity frequency doubling of a continuous wave (CW) laser operation of a 1064 nm Nd:Y_0.36Gd_0.64VO₄ laser under in-band diode pumping at 880 nm. An GdCa₄O(BO₃)₃ (GdCOB) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an incident pump power of 17.8 W, as high as 2.92 W of CW output power at 532 nm is achieved. The optical-to-optical conversion efficiency is up to 16.4%, and the fluctuation of the green output power was better than 2.5% in the given 30 min.     

Stimulated Raman scattering of picosecond pulses in a YVO<Subscript>4</Subscript> crystal

Stimulated Raman scattering (SRS) with a picosecond pulse in YVO₄ crystals in a transient state was investigated. The picosecond gain of YVO₄ crystals pumped by a 532-nm laser evaluated by means of the threshold was 16.13 cm/GW.     

Diode-pumped Nd:YVO<Subscript>4</Subscript>-Nd:YLF blue laser at 488 nm by intracavity sum-frequency-mixing

We report a laser architecture to obtain continuous-wave blue radiation at 488 nm. A 808 nm diodepumped the Nd:YVO₄ crystal emitting at 914 nm. A part of the pump power was then absorbed by the Nd:YVO₄ crystal. The remaining was used to pump the Nd:YLF crystal emitting at 1047 nm. Intracavity sum-frequency mixing at 914 and 1047 nm was then realized in a LBO crystal to reach the blue radiation. We obtained a continuous-wave output power of 514 mW at 488 nm with a pump laser diode emitting 19.6 W at 808 nm.     

Continuous wave,singly resonant MgO:PPLN OPO pumped by a Nd:YVO<Subscript>4</Subscript>/YVO<Subscript>4</Subscript> ring laser

A continuous wave (CW), extra-cavity singly resonant optical parametric oscillator (SRO) has been demonstrated. The SRO is based on 5% magnesium-oxide doped periodically-poled lithium niobate (MgO:PPLN) pumped by a CW Nd:YVO₄/YVO₄ ring laser centered at 1064.4 nm. The nonlinear crystal temperature is kept at 120.0 ± 0.1°C and a domain period of 30 μm is used in this experiment. When the pump power is 11 W, an output power of 2.0 W at the idler wavelength of 3.479 μm has been obtained from the OPO. The optical-optical conversion efficiency is about 18.2%, and the slope efficiency is about 20.8%.     

Quasi-three-level Nd:YVO<Subscript>4</Subscript> laser by diode pumping at 888 nm

We report efficient laser emission on the 914 nm ⁴ F _3/2 to ⁴ I _9/2 transition in Nd:YVO₄ under the pump with diode lasers at 888 nm for the first time. Continuous wave 6.57 W output power at 914 nm is obtained from a V-type resonator under 18.3 W of absorbed pump power; the slope efficiency with respect to the absorbed pump power was 60.6%. Moreover, intracavity frequency doubling with BiB₃O₆ (BiBO) nonlinear crystal yielded 1.77 W of deep-blue light at 457 nm with beam quality characterized by an M₂ factor of 1.25.     

A novel prism beam-shaping laser diode bar end-pumped TEM<Subscript>00</Subscript> mode Nd:YVO<Subscript>4</Subscript> laser

A beam-shaping diode end-pumped TEM₀₀ mode CW Nd:YVO₄ laser is presented. A special beam-shaping element made up of isosceles right-angled prism pieces is adopted to realize beam symmetric. Two cylinder lenses are used to couple the shaped beam into a 3 × 3 × 9 mm Nd:YVO₄ crystal with 0.3 at % neodymium doping. By using this laser system, we have achieved 6.1 W CW laser operated in single transverse mode at 1064 nm with 95.2% reshaping efficiency and 25.6% optical-optical conversion efficiency.     

Stationary generation of diode-pumped self-Raman Nd:YVO<Subscript>4</Subscript>/YVO<Subscript>4</Subscript> composite crystal laser

Output power dependences of composite Nd³⁺:YVO₄ Raman laser stationary generation on the longitudinal diode pump power are measured at different transmissions of the output mirror at the Stokes radiation frequency. The deviation of the measured dependences from linear is explained by the influence of thermal effects on both the overlap of the beams and diffraction losses. A method to estimate the laser and Stokes losses in the cavity and the parameters characterizing the overlap of the laser radiation with the pump and Stokes beams is proposed. A Stokes-component of power 2.1 W is obtained and corresponds to 12% diode-to-Stokes efficiency.     

Passively Q-switched yellow laser formed by a self-Raman composite Nd:YVO<Subscript>4</Subscript>/YVO<Subscript>4</Subscript> crystal

Passively Q-switched yellow output from a frequency-doubled self-stimulating Raman composite Nd:YVO₄/YVO₄ laser using a Cr:YAG saturable absorber is reported. Maximum yellow output power of 264 mW was obtained with corresponding diode to yellow conversion efficiency of 5.9%.     

An Intracavity-Triggered Passively-Switched Nd:YVO<Subscript>4</Subscript> Laser

We demonstrate an intracavity-triggered passively Q-switched Nd:YVO₄ laser within a diode-end-pumped configuration. We employ a Cr⁴⁺:YAG saturable absorber as the passive Q switch and an Nd:LiYF₄ (YLF) laser as the laser triggering of the Q-switched laser. Since we use the same Cr⁴⁺:YAG crystal and output coupler with the Nd:YVO₄ laser, the Cr⁴⁺:YAG Q switch is triggered inside the Nd:YLF laser cavity. As a result, the timing jitter in standard deviation of Nd:YVO₄ laser can be reduced to 16 ns.