Influence of Radio-Frequecy Power on Structural and Electrical Properties of Sputtered Hafnium Dioxide Thin Films

Hafnium dioxide （HfO2） thin films are prepared by rf magnetron sputtering. The influences of rf power on the structure, chemical states and electrical properties of the thin films were investigated through x-ray diffraction, x-ray photoelectron spectroscopy, capacitance-voltage and leakage current density-voltage measurement and UV-VIS spectrophotometry. The results show that the HfO2 thin films have a mixed structure of amorphous and polycrystalline phases. With increasing rf power, the crystallinity is enhanced and the crystallite size of the thin films is increased. The oxidation of Hf atoms is improved with increasing rf power for the HfO2 thin films. The flat band shift, oxide charge density and leakage current density of the thin films all decrease as the rf power increases from 50 to 110 W, and then increase as the rf power is increased to 140 W. The band gap energy is smaller for the thin film deposited at 110 W.     

Transparent conductive reduced graphene oxide thin films produced by spray coating

Reduced graphene oxide thin films were fabricated on quartz by spray coating method using a stable dispersion of reduced graphene oxide in N,N-Dimethylformamide.The dispersion was produced by chemical reduction of graphene oxide,and the film thickness was controlled with the amount of spray volume.AFM measurements revealed that the thin films have near-atomically flat surface.The chemical and structural parameters of the samples were analyzed by Raman and XPS studies.It was found that the thin films show electrical conductivity with good optical transparency in the visible to near infrared region.The sheet resistance of the films can be significantly reduced by annealing in vacuum and reach 58 k?with a light transmittance of 68.69%at 550 nm.The conductive transparent properties of the reduced graphene oxide thin films would be useful to develop flexible electronics.     

Structure Stability of LaAlO3 Thin Films on Si Substrates

A series of amorphous and single-crystalline LaAlO3 （LAO） thin films are fabricated by laser molecular-beam epitaxy technique on Si substrates under various conditions of deposition. The structure stability of the LAO films annealed in high temperature and various ambients is studied by x-ray diffraction as well as high-resolution transmission electron microscopy. The results show that the epitaxial LAO films have very good stability, and the structures of amorphous LAO thin films depend strongly on the conditions of deposition and post-annealing. The results reveal that the formation of LAO composition during the deposition is very important for the structure stability of LAO thin films.     

Growth of n-type ZnO thin films by using mixture gas of hydrogen and argon

High-quality oxide semiconductor ZnO thin films were prepared on single-crystal sapphire and LaAlOZnO薄膜 氩氢混合气体 薄膜生长 异质结构 薄膜物理学ZnO, PLD, heterostructureProject supported by the National Natural Science Foundation of China (Grant No 19974001) and the National Key Basic Research Special Foundation of China (Grant No NKBRSF G1999064604 and G2000036505).2005-05-309/3/2005 12:00:00 AMHigh-quality oxide semiconductor ZnO thin films were prepared on single-crystal sapphire and baAlO3 substrates by pulsed laser deposition （PLD） in the mixture gas of hydrogen and argon. Low resistivity n-type ZnO thin films with smoother surface were achieved by deposition at 600℃ in 1Pa of the mixture gas. in addition, ferromagnetism was observed in Co-doped ZnO thin films and rectification Ⅰ - Ⅴ curves were found in p-GaN/n-ZnO and p-CdTe/n-ZnO heterostructure junctions. The results indicated that using mixture gas of hydrogen and argon in PLD technique was a flexible method for depositing high-quality n-type oxide semiconductor films, especially for the multilayer thin film devices.     

Characteristics of Sn-Doped Ge2Sb2Te5 Films Used for Phase-Change Memory

Sn-doped Ge2Sb2Te5 thin films deposited on Si（100）/SiO2 substrates by rf magnetron sputtering are investigated by a differential scanning calorimeter, x-ray diffraction and sheet resistance measurement. The crystallization temperatures of the 3.58 at.%, 6.92 at.% and 10.04 at.% Sn-doped Ge2Sb2Te5 thin films have decreases of 5.3, 6.1 and 0.9℃, respectively, which is beneficial to reduce the switching current for the amorphous-to-crystalline phase transition. Due to Sn-doping, the sheet resistance of crystalline Ge2Sb2Te5 thin films increases about 2-10 times, which may be useful to reduce the switching current for the amorphous-to-crystalline phase change. In addition, an obvious decreasing dispersibility for the sheet resistance of Sn-doped Ge2Sb2Te5 thin films in the crystalline state has been observed, which can play an important role in minimizing resistance difference for the phase-change memory cell element arrays.     

Thermal Conductivity Measurement of Submicron-Thick Aluminium Oxide Thin Films by a Transient Thermo-Reflectance Technique

Thermal conductivity of submicron-thick aluminium oxide thin films prepared by middle frequency magnetron sputtering is measured using a transient thermo-reflectance technique. A three-layer model based on transmission line theory and the genetic algorithm optimization method are employed to obtain the thermal conductivity of thin films and the interracial thermal resistance. The results show that the average thermal conductivity of 330- 1000nm aluminium oxide thin films is 3.3 Wm^-1K^-1 at room temperature. No significant thickness dependence is found. The uncertainty of the measurement is less than 10%.     

Monte Carlo simulation of magnetic nanostructured thin films

Using Monte Carlo simulation, we have compared the magnetic properties between nanostructured thin films and two-dimensional crystalline solids. The dependence of nanostructured properties on the interaction between particles that constitute the nanostructured thin films is also studied. The result shows that the parameters in the interaction potential have an important effect on the properties of nanostructured thin films at the transition temperatures.     

PREPARATION AND TRANSPORT PROPERTIES OF SUPERCONDUCTING BPSCCO THIN FILMS

The perparation of BPSCCO thin films by DC magnetron sputtering is reported. We prepared high mass density target of Bi2Pb0.6Sr2Ca2Cu3O10. By varying the substrate temperature, ratio of Ar and O2 pressure as well as the distance between target and substrate, we were able to optimize the process for c -axis oriented thin films of Bi-Compounds. As deposited films show Tcon at about 95K. These films were examined using the electron-probe microanalysic (EMPA) and X-ray diffraction (XRD). The results of electrical resistivity and Hall effect have been discussed. Hall voltage in the mixed state is strongly nonlinear, showing certain features that suggests that vortex depinning mechanism plays an important role in the Hall effect behaviour.     

Water—Soluble Multi—Walled Nanotube and its Film Characteristics

Covlent modification of multi-walled-nanotube(MWNT)surface-enhanced solubility in water yields a thin transparent shining dark-coloured film of soluble MWNT(s-MWNT) with a conductivity of 1.25S/cm.Fourier transform infrared spectroscopy,scanning electron microscopy,transmission-electron microscopy,and UV-vis absorptioin spectroscopy were used for the film characterization.The result shows that enhanced interactions between s-MWNT and water and betweem s-MWNTs play an important role in increasing the solubility of the nanotubes in water and in the formation of uniform thin films.     

The Influence of Au-Doping on Morphology and Visible-Light Reflectivity of TiN Thin Films Deposited by Direct-Current Reactive Magnetron Sputtering

Ti, TiN and Au-TiN （Au content： from 0.5%to 7.7%） thin films were deposited on stainless steel substrates by dc reactive magnetron sputtering with a metal Ti target. The crystal structure, surface morphology and visiblelight reflectivity of the films for different film compositions are studied in detail. Distinctly different surface morphologies appear for the Ti, TiN and Au-TiN thin films. It can be observed that the surface morphology of the TiN film is affected by the Au-doping, when the Au content increases from 0% to 7.7%, surface roughness enlarges from 62.4 to 82.8 nm. Moreover, visible-light reflectivity varies significantly with increasing A u contents in the TiN films. However, the rettectivity of the TiN thin film at 550-800 nm is higher than that of the Au-TiN thin film. The present work illustrates the dependence of metal elements on the surface morphology and on the reflectivity of Au-TiN thin films. It is speculated that the addition of Au can suppress the formation and growth of TiN grains so that it changes the surface morphology and the Au-TiN thin film has potential applications in spectral selective coating.     

Thin film photocatalysis for environmental remediation: A status review

This review accounts, various metal oxide and metal sulfide thin films available for photodegradation of several organic compounds. Due to difficulties in recycling and to avoid rigorous recollection of powder catalysts, the thin film catalyst are gaining rapid attention for photocatalytic applications. The semiconducting thin films are growing as promising photocatalyst for water treatment. This review focuses mainly on the photocatalytic activity of metal oxide thin films in terms of its stability, charge transport and absorption properties. Thin film photocatalyst provides the increased efficiency and cost reduction of device. Furthermore, this review summarizes some key factors regarding the enhancement in photocatalytic performance of thin films.     

Metal nanoparticle production by pulsed laser nanostructuring of thin metal films

The controllable nanostructuring of thin metal films by nanosecond UV laser pulses is introduced as a novel technique for the production of metal nanoparticles supported on a range of different oxide substrates, including indium tin oxide. This processing is performed at low macroscopic temperatures. The physical mechanisms underlying the nanostructuring are discussed and applications for these nanoparticle films, including as catalysts for nanotube/nanowire growth and in surface enhanced Raman spectroscopy measurements, are introduced.     

Selective electroplating of copper lines on pre-patterned tantalum oxide thin films

Direct selective metal deposition on semiconductors is of interest to electronic device technology, in particular for interconnects and Schottky devices. In this study, we investigate selective copper electrodeposition on patterned tantalum oxide thin films. Cyclic voltammetry studies show that thick tantalum oxide thin films have insulating properties while oxide films thinner than a critical value are semiconductors. Copper films electrodeposited on tantalum oxide thin films are known to form Schottky contacts. We demonstrate the formation of copper patterns on pre-patterned tantalum oxide films by a simple process: an insulating tantalum oxide film was grown electrochemically, the film was then mechanically scratched followed by mild oxidation to produce a thin tantalum oxide film inside the scratch. Based on the differential behavior of thin and thick tantalum oxide films, metal lines were electrodeposited selectively under formation of Schottky junctions. The process demonstrated in this paper is compatible to standard processes for semiconductor device fabrication while permitting flexible prototyping for research at small scales.     

SRPES investigation of tungsten oxide in different oxidation states

The microstructure and morphology of metal oxide films have a large influence on the sensitivity, selectivity and stability of the gas sensors and catalysts. Considering that the sensing properties of thin film sensors are strongly related to their microstructures and to the exact stoichiometry of their surfaces, an accurate control of these parameters is extremely important for the production of sensors with reproducible behavior. In this paper, an influence of preparation and annealing conditions on the physical and chemical properties of tungsten oxide thin film is investigated. Two types of samples having polycrystalline structure were prepared by different methods (deposition under UHV conditions, oxidation of metallic tungsten layer in air). The samples were reduced by heating in UHV at different temperatures and/or by Ar ion bombardment. It was found that the stability of tungsten oxide layer with respect to the treatment procedures depends strongly on the preparation conditions of the sample. The reduction process is discussed in terms of different oxidation states resolved in the W4f photoelectron spectrum. Easy reducibility of the tungsten oxide layer prepared by vacuum deposition was found to be a consequence of its nano-crystalline structure.     

Spectroscopic analysis of the riboflavin—serum albumins interaction on silver nanoparticles

Metallic nanoparticles (NPs) supported on oxides thin films are commonly used as model catalysts for studies of heterogeneous catalysis. Several 4d and 5d metal NPs (for example, Pd, Pt and Au) grown on alumina, ceria and titania have shown strong metal support interaction (SMSI), for instance the encapsulation of the NPs by the oxide. The SMSI plays an important role in catalysis and is very dependent on the support oxide used. The present work investigates the growth mechanism and atomic structure of Rh NPs supported on epitaxial magnetite Fe₃O₄(111) ultrathin films prepared on Pd(111) using the Molecular Beam Epitaxy (MBE) technique. The iron oxide and the Rh NPs were characterized using X-ray photoelectron spectroscopy (XPS), low-energy electron diffraction and photoelectron diffraction (PED). The combined XPS and PED results indicate that Rh NPs are metallic, cover approximately 20 % of the iron oxide surface and show height distribution ranging 3–5 ML (monolayers) with essentially a bulk fcc structure.     

Surface roughness characterization of Al-doped zinc oxide thin films using rapid optical measurement

Transparent conductive oxide thin films have been widely investigated in photoelectric devices such as flat panel display (FPD) and solar cells. Al-doped zinc oxide (AZO) thin films have been widely employed in FPD. Measuring the surface roughness of AZO thin films is important before the manufacturing of photoelectric device using AZO thin films because surface roughness of AZO thin films will significantly affect the performance of photoelectric device. Traditional methods to measure surface roughness of AZO thin films are scanning electron microscopy and atomic force microscopy. The disadvantages of these approaches include long lead time and slow measurement speed. To solve this problem, an optical inspection system for rapid measurement of the surface roughness of AZO thin films is developed in this study. It is found that the incident angle of 60° is a good candidate to measure the surface roughness of AZO thin films. Based on the trend equation y=−3.6483x+2.1409, the surface roughness of AZO thin films (y) can be directly deduced from the peak power density (x) using the optical inspection system developed. The maximum measurement-error rate of the optical inspection system developed is less than 8.7%.The saving in inspection time of the surface roughness of AZO thin films is up to 83%.     

Synthesis of carbon nanotubes directly over TEM grids aiming the study of nucleation and growth mechanisms

A novel approach to produce electron-transparent multi-layer membranes over TEM grids for transmission electron microscopy analysis is presented. The membranes have been used to grow and analyze carbon nanostructured materials in a thermal-chemical vapor deposition process using Ni and Cu as catalysts and silicon oxide thin films as support layers, at temperatures as high as 900 °C. It is important that conditions of the synthesis using the electron-transparent multi-layer membrane system are similar to those for a conventional chemical vapor deposition process, where oxidized silicon wafers are employed. In particular, the thickness of the silicon oxide and the catalyst layers are the same, and similar carbon tubular structures were grown using both substrates. The use of membranes was crucial especially for the study of the nucleation mechanism for carbon nanotubes. These electron-transparent multi-layer membranes are relatively easy to obtain and they can be used for transmission electron microscopy studies of high-temperature synthesis of different nanostructured materials.     

A nanogravimmetric investigation of the charging processes on ruthenium oxide thin films and their effect on methanol oxidation

The charging processes and methanol oxidation that occur during the oxidation-reduction cycles in a ruthenium oxide thin film electrode (deposited by the sol-gel method on Pt covered quartz crystals) were investigated by using cyclic voltammetry, chronoamperometry and electrochemical quartz crystal nanobalance techniques. The ruthenium oxide rutile phase structure was determined by X-ray diffraction analysis. The results obtained during the charging of rutile ruthenium oxide films indicate that in the anodic sweep the transition from Ru(II) to Ru(VI) occurs followed by proton de-intercalation. In the cathodic sweep, electron injection occurs followed by proton intercalation, leading to Ru(II). The proton intercalation/de-intercalation processes can be inferred from the mass/charge relationship which gives a slope close to 1 g mol⁻¹ (multiplied by the Faraday constant) corresponding to the molar mass of hydrogen. From the chronoamperometric measurements, charge and mass saturation of the RuO₂ thin films was observed (440 ng cm⁻²) during the charging processes, which is related to the total number of active sites in these films. Using the electrochemical quartz crystal nanobalance technique to study the methanol oxidation reaction at these films was possible to demonstrate that bulk oxidation occurs without the formation of strongly adsorbed intermediates such as CO_ads, demonstrating that Pt electrodes modified by ruthenium oxide particles can be promising catalysts for the methanol oxidation as already shown in the literature.     

Catalyst design using an inverse strategy: From mechanistic studies on inverted model catalysts to applications of oxide-coated metal nanoparticles

Metal-oxide interfaces are of great importance in catalytic applications since each material can provide a distinct functionality that is necessary for efficient catalysis in complex reaction pathways. Moreover, the synergy between two materials can yield properties that exceed the superposition of single sites. While interfaces between metals and metal oxides can play a key role in the reactivity of traditional supported catalysts, significant attention has recently been focused on using “inverted” oxide/metal catalysts to prepare catalytic interfaces with unique properties. In the inverted systems, metal surfaces or nanoparticles are covered by oxide layers ranging from submonolayer patches to continuous films with thickness at the nanometer scale. Inverse catalysts provide an alternative approach for catalyst design that emphasizes control over interfacial sites, including inverted model catalysts that provide an important tool for elucidation of mechanisms of interfacial catalytic reactions and oxide-coated metal nanoparticles that can yield improved stability, activity and selectivity for practical catalysts.This review begins by providing a summary of recent progress in the use of inverted model catalysts in surface science studies, where oxides are usually deposited onto the surface of metal single crystals under ultra-high vacuum conditions. Surface-level studies of inverse systems have yielded key insights into interfacial catalysis and facilitated active site identification for important reactions such as CO oxidation, the water-gas shift reaction, and CO₂ reduction using well-defined model systems, informing strategies for designing improved technical catalysts. We then expand the scope of inverted catalysts, using the “inverse” strategy for preparation of higher-surface area practical catalysts, chiefly through the deposition of metal oxide films or particles onto metal nanoparticles. The synthesis techniques include encapsulation of metal nanoparticles within porous oxide shells to generate core-shell type catalysts using wet chemical techniques, the application of oxide overcoat layers through atomic layer deposition or similar techniques, and spontaneous formation of metal oxide coatings from more conventional catalyst geometries under reaction or pretreatment conditions. Oxide-coated metal nanoparticles have been applied for improvement of catalyst stability, control over transport or binding to active sites, direct modification of the active site structure, and formation of bifunctional sites. Following a survey of recent studies in each of these areas, future directions of inverted catalytic systems are discussed.     

Indium and tin oxide polycrystalline thin films as NO gas sensors produced by reactive pulsed laser ablation and deposition

Pulsed laser ablation is a very interesting method of depositing thin films of several materials and compounds, such as oxides, nitrides, insulators, semiconductors, and superconductors. Indium and tin oxide polycrystalline thin films have been grown on silicon (100) substrates by reactive PLD from two metallic targets of indium and tin by multilayered deposition, in the presence of oxygen, using a frequency-doubled Nd-YAG laser (5=532 nm). The films produced have been studied to evaluate their use as NO gas sensors, and the best performance has been found by varying some important parameters, such as the substrate temperature and the pressure of oxygen in the deposition chamber. X-ray diffraction analysis of the deposited films shows that they are polycrystalline with a preferential (400) orientation. Electrical resistivity measurements, performed by using a four-point probe technique, show a sharp increase in resistivity when the films are exposed to NO. The electrical responses of tin oxide-indium oxide multilayered thin films are reported.