Effect of temperature,electric and magnetic field on spin relaxation in single layer graphene: A Monte Carlo simulation study

In this article, we employ the semiclassical Monte Carlo approach to study the spin polarized electron transport in single layer graphene channel. The Monte Carlo method can treat non-equilibrium carrier transport and effects of external electric and magnetic fields on carrier transport can be incorporated in the formalism. Graphene is the ideal material for spintronics application due to very low Spin Orbit Interaction. Spin relaxation in graphene is caused by D'yakonov-Perel (DP) relaxation and Elliott-Yafet (EY) relaxation. We study effect of electron electron scattering, temperature, magnetic field and driving electric field on spin relaxation length in single layer graphene. We have considered injection polarization along z-direction which is perpendicular to the plane of graphene and the magnitude of ensemble averaged spin variation is studied along the x-direction which is the transport direction. This theoretical investigation is particularly important in order to identify the factors responsible for experimentally observed spin relaxation length in graphene.     

Generation of an external magnetic field with the spin orientation effect in a single layer Ising nanographene

In this work, the magnetic properties of the single layer Ising nanogaphene (SLING) are investigated by using Kaneyoshi approach (KA) within the effective field theory for different spin orientations of its magnetic atoms. We find that the magnetizations of the SLING has no phase transition, certain Curie temperature and distinct peak of susceptibility at T_c for the some spin orientations at the zero external magnetic field (H=0.0). Because these behaviors occur at H≠0.0, we suggest that the SLING generates an external magnetic field and behaves as an external magnetic field generator for these spin orientations. However, the SLING exhibits ferromagnetic behaviors for only one spin orientations. But, it exhibits antiferromagnetic behaviors for the others. For the AFM cases, diamagnetic susceptibility behaviors and type II superconductivity hysteresis behaviors are obtained. We hope that these results can open a door to obtain new class of single layer graphene and graphene-based magnetic field generator devices with the spin orientation effect.     

Electrically controllable spin transport in bilayer graphene with Rashba spin-orbit interaction

We study the spin transport in bilayer graphene nanoribbons (BGNs) in the presence of Rashba spin-orbit interaction (SOI) and external gate voltages. It is found that the spin polarization can be significantly enhanced by the interlayer asymmetry or longitudinal mirror asymmetry produced by external gate voltages. Rashba SOI alone in BGNs can only generate current with spin polarization along the in-plane y direction, but the polarization components can be found along the x, y and z directions when a gate voltage is applied. High spin polarization with flexible orientation is obtained in the proposed device. Our findings shed new light on the generation of highly spin-polarized current in BGNs without external magnetic fields, which could have useful applications in spintronics device design.     

Spin gapless armchair graphene nanoribbons under magnetic field and uniaxial strain

Using Green＇s function method, we investigate the spin transport properties of armchair graphene nanoribbons （AG- NRs） under magnetic field and uniaxial strain. Our results show that it is very difficult to transform narrow AGNRs directly from semiconductor to spin gapless semiconductors （SGS） by applying magnetic fields. However, as a uniaxial strain is exerted on the nanoribbons, the AGNRs can transform to SGS by a small magnetic field. The combination mode be- tween magnetic field and uniaxial strain displays a nonmonotonic arch-pattern relationship. In addition, we find that the combination mode is associated with the widths of nanoribbons, which exhibits group behaviors.     

Strain engineering of graphene nanoribbons: pseudomagnetic versus external magnetic fields

Bandgap opening due to strain engineering is a key architect for making graphene’s optoelectronic, straintronic, and spintronic devices. We study the bandgap opening due to strain induced ripple waves and investigate the interplay between pseudomagnetic fields and externally applied magnetic fields on the band structures and spin relaxation in graphene nanoribbons (GNRs). We show that electron-hole bands of GNRs are highly influenced (i.e. level crossing of the bands are possible) by coupling two combined effects: pseudomagnetic fields (PMF) originating from strain tensor and external magnetic fields. In particular, we show that the tuning of the spin-splitting band extends to large externally applied magnetic fields with increasing values of pseudomagnetic fields. Level crossings of the bands in strained GNRs can also be observed due to the interplay between pseudomagnetic fields and externally applied magnetic fields. We also investigate the influence of this interplay on the electromagnetic field mediated spin relaxation mechanism in GNRs. In particular, we show that the spin hot spot can be observed at approximately B = 65 T (the externally applied magnetic field) and B₀ = 53 T (the magnitude of induced pseudomagnetic field due to ripple waves) which may not be considered as an ideal location for the design of straintronic devices. Our analysis might be used for tuning the bandgaps in strained GNRs and utilized to design the optoelectronic devices for straintronic applications.     

Multifunctionality for the nanojunction of a rotating p-phenylene vinylene molecule between graphene leads

With the multi-functional molecular device based on graphene nanoribbon being deeply studied in experiment, the zigzag-edged graphene device is still worth to investigate. Employing the ab-initio method, the spin transport properties have been studied for the nanojunctions consisting of a p-phenylene vinylene (PPV) molecule sandwiched between two-probe leads of zigzag-edged graphene nanoribbons (ZGNRs). A series of obvious electromagnetic transmission functionalities, including spin switching, negative differential resistance (NDR), dual spin-filtering, magnetoresistance and spin-diode behaviors, are numerically referred in the proposed molecular junction within spin parallel or antiparallel configurations. The performance of switching and double spin filtering can be explained by the transport spectra or total transmission pathways. Besides, the rectification effect is due to the asymmetry spatial distribution of the local density of states as well as the corresponding coupling between the PPV molecule and leads. It is expected that the designed models can be ideal candidate for future spintronic device.     

Spin transport and relaxation in graphene

We review our recent work on spin injection, transport and relaxation in graphene. The spin injection and transport in single layer graphene (SLG) were investigated using nonlocal magnetoresistance (MR) measurements. Spin injection was performed using either transparent contacts (Co/SLG) or tunneling contacts (Co/MgO/SLG). With tunneling contacts, the nonlocal MR was increased by a factor of ∼1000 and the spin injection/detection efficiency was greatly enhanced from ∼1% (transparent contacts) to ∼30%. Spin relaxation was investigated on graphene spin valves using nonlocal Hanle measurements. For transparent contacts, the spin lifetime was in the range of 50-100 ps. The effects of surface chemical doping showed that for spin lifetimes in the order of 100 ps, charged impurity scattering (Au) was not the dominant mechanism for spin relaxation. While using tunneling contacts to suppress the contact-induced spin relaxation, we observed the spin lifetimes as long as 771 ps at room temperature, 1.2 ns at 4 K in SLG, and 6.2 ns at 20 K in bilayer graphene (BLG). Furthermore, contrasting spin relaxation behaviors were observed in SLG and BLG. We found that Elliot-Yafet spin relaxation dominated in SLG at low temperatures whereas Dyakonov-Perel spin relaxation dominated in BLG at low temperatures. Gate tunable spin transport was studied using the SLG property of gate tunable conductivity and incorporating different types of contacts (transparent and tunneling contacts). Consistent with theoretical predictions, the nonlocal MR was proportional to the SLG conductivity for transparent contacts and varied inversely with the SLG conductivity for tunneling contacts. Finally, bipolar spin transport in SLG was studied and an electron-hole asymmetry was observed for SLG spin valves with transparent contacts, in which nonlocal MR was roughly independent of DC bias current for electrons, but varied significantly with DC bias current for holes. These results are very important for the use of graphene for spin-based logic and information storage applications.     

Structural defects influence on the conductance of strained zigzag graphene nanoribbon

In this paper, we investigate the influence of point structural defects on the transport properties of zigzag graphene nanoribbons (ZGNRs) under uniaxial strain field, using the numerical studies based on the ab-initio calculation, the standard tight-binding model and Green's functions. The calculation results show that the direction of applied strain and defect type significantly affect the conductance properties of ZGNRs. The conductance of the defective nanoribbons generally decreases and some dips corresponding to complete electron backscattering is appeared. This behavior is originated from the different coupling between the conducting electronic states influenced by the wave function modification around the Fermi energy which depends on the defect type. We show that the presence of defects leads to a significant increase in local current. Furthermore, we have investigated the strain-tunable spin transport of defective ZGNRs in the presence of the exchange magnetic field and Rashba spin-orbit coupling (RSOC).     

Effect of non-uniform exchange field in ferromagnetic graphene

We have presented here the consequences of the non-uniform exchange field on the spin transport issues in spin chiral configuration of ferromagnetic graphene. Taking resort to the spin–orbit coupling (SOC) term and non-uniform exchange coupling term we are successful to express the expression of Hall conductivity in terms of the exchange field and SOC parameters through the Kubo formula approach. However, for a specific configuration of the exchange parameter we have evaluated the Berry curvature of the system. We also have paid attention to the study of SU(2) gauge theory of ferromagnetic graphene. The generation of anti damping spin–orbit torque in spin chiral magnetic graphene is also briefly discussed.     

Manipulating edge current spin polarization in zigzag MoS2 nanoribbons

The electronic structure and quantum transport of a zigzag monolayer molybdenum disulfide (MoS₂) nanoribbon are investigated using a six-band tight-binding model. For metallic edge modes, considering both an intrinsic spin–orbit coupling and local exchange field effects, spin degeneracy and spin inversion symmetry are broken and spin selective transport is possible. Our model is a three-terminal field effect transistor with a circular-shaped gate voltage in the middle of scattering region. One terminal measures the top edge current and the other measures the bottom edge current separately. By controlling the circular gate voltage, each terminal can detect a totally spin-polarized edge current. The radius of the circular gate and the strength of the exchange field are important, because the former determines the size of the channel in both S-terminated (top) and Mo-terminated (bottom) edges and the latter is strongly related to unbalancing of the density of spin states. The results presented here suggest that it should be possible to construct spin filters using implanted MoS₂ nanoribbons.     

Ultrasound velocimetry of ferrofluid spin-up flow measurements using a spherical coil assembly to impose a uniform rotating magnetic field

Ferrofluid spin-up flow is studied within a sphere subjected to a uniform rotating magnetic field from two surrounding spherical coils carrying sinusoidally varying currents at right angles and 90° phase difference. Ultrasound velocimetry measurements in a full sphere of ferrofluid shows no measureable flow. There is significant bulk flow in a partially filled sphere (1-14 mm/s) of ferrofluid or a finite height cylinder of ferrofluid with no cover (1-4 mm/s) placed in the spherical coil apparatus. The flow is due to free surface effects and the non-uniform magnetic field associated with the shape demagnetizing effects. Flow is also observed in the fully filled ferrofluid sphere (1-20 mm/s) when the field is made non-uniform by adding a permanent magnet or a DC or AC excited small solenoidal coil. This confirms that a non-uniform magnetic field or a non-uniform distribution of magnetization due to a non-uniform magnetic field are causes of spin-up flow in ferrofluids with no free surface, while tangential magnetic surface stress contributes to flow in the presence of a free surface.Recent work has fitted velocity flow measurements of ferrofluid filled finite height cylinders with no free surface, subjected to uniform rotating magnetic fields, neglecting the container shape effects which cause non-uniform demagnetizing fields, and resulting in much larger non-physical effective values of spin viscosity η′∼10⁻⁸−10⁻¹² N s than those obtained from theoretical spin diffusion analysis where η′≤10⁻¹⁸ N s. COMSOL Multiphysics finite element computer simulations of spherical geometry in a uniform rotating magnetic field using non-physically large experimental fit values of spin viscosity η′∼10⁻⁸−10⁻¹² N s with a zero spin-velocity boundary condition at the outer wall predicts measureable flow, while simulations setting spin viscosity to zero (η′=0) results in negligible flow, in agreement with the ultrasound velocimetry measurements. COMSOL simulations also confirm that a non-uniform rotating magnetic field or a uniform rotating magnetic field with a non-uniform distribution of magnetization due to an external magnet or a current carrying coil can drive a measureable flow in an infinitely long ferrofluid cylinder with zero spin viscosity (η′=0).     

石墨烯量子磁输运性质的电场效应

最近研究发现石墨烯在一维周期性电学或磁学调制势下,其扩散电导率会出现Weiss振荡.本文进一步探索了面外加垂直磁场和面内加横向电场以及一维周期性弱调制电学势的多场耦合作用下,石墨烯的量子磁输运性质,结果表明:Weiss振荡振幅和电导率数值都随着静电场的增加而增加.有趣的是,当电场与磁场的比值达到某一临界值,即β_1=E/(ν_F·B)=1时,输运电导率的Weiss振荡突然消失.这一奇特现象在传统的二维电子气体中是不存在的,因此可以归因于石墨烯载流子外加电磁场的反常相对论性能谱.     

Spin Caloritronic Transport of Tree-Saw Graphene Nanoribbons

Using density functional theory combined with non-equilibrium Green's function method, we investigate the spin caloritronic transport properties of tree-saw graphene nanoribbons. These systems have stable ferromagnetic ground states with a high Curie temperature that is far above room temperature and exhibit obvious spin-Seebeck effect. Moreover, thermal colossal magnetoresistance up to 1020% can be achieved by the external magnetic field modulation. The underlying mechanism is analyzed by spin-resolved transmission spectra, current spectra and band structures.     

A structurally-controllable spin filter in a δ-doped magnetically modulated semiconductor nanostructure with zero average magnetic field

We report on a theoretical investigation of spin-polarized transport in a δ-doped magnetically modulated semiconductor nanostructure, which can be experimentally realized by depositing a ferromagnetic stripe on the top of a semiconductor heterostructure and by using the atomic layer doping technique such as molecular beam epitaxy (MBE). It is shown that although such a nanostructure has a zero average magnetic filed, a sizable spin polarization exists due to the Zeeman splitting mechanism. It is also shown that the degree of spin polarization varies sensitively with the weight and/or position of the δ-doping. Therefore, one can conveniently tailor the behaviour of the spin-polarized electron by tuning the δ -doping, and such a device can be employed as a controllable spin filter for spintronics.     

Electric field effect in ultrathin zigzag graphene nanoribbons

The electric field effect in ultrathin zigzag graphene nanoribbons containing only three or four zigzag carbon chains is studied by first-principles calculations, and the change of conducting mechanism is observed with increasing in-plane electric field perpendicular to the ribbon. Wider zigzag graphene nanoribbons have been predicted to be spin-splitted for both valence band maximum(VBM) and conduction band minimum(CBM) with an applied electric field and become half-metal due to the vanishing band gap of one spin with increasing applied field. The change of VBM for the ultrathin zigzag graphene nanoribbons is similar to that for the wider ones when an electric field is applied. However, in the ultrathin zigzag graphene nanoribbons, there are two kinds of CBMs, one is spin-degenerate and the other is spin-splitted, and both are tunable by the electric field. Moreover, the two CBMs are spatially separated in momentum space. The conducting mechanism changes from spin-degenerate CBM to spin-splitted CBM with increasing applied electric field. Our results are confirmed by density functional calculations with both LDA and GGA functionals, in which the LDA always underestimates the band gap while the GGA normally produces a bigger band gap than the LDA.     

Rippling and the external electric field on conductance in corrugated graphene nanoribbons molecular device

Molecular devices constructed using corrugated graphene nanoribbons (GNRs) are proposed in the paper. Recursive Green's function calculations show that the intrinsic ripples in graphene and the external electric field energy play important roles on the electron transport properties. Negative differential resistance is observed in zigzag corrugated GNRs. With the wavelength of the ripples decreasing, both the zigzag and armchair corrugated GNRs exhibit ON/OFF characteristics. On applying external electric field, current decreases dramatically in zigzag corrugated GNRs. These findings show that corrugated GNRs can be used to design functional nanoscale devices.     

The effects of electron–phonon interaction on anisotropic RKKY interaction in graphene nanoribbon

We study the Ruderman–Kittle–Kasuya–Yosida (RKKY) interaction in doped armchair graphene nanoribbon. The effects of both external magnetic field and electron-Holstein phonon on RKKY interaction have been addressed. RKKY interaction as a function of distance between localized moments has been analyzed. It has been shown that a magnetic field along the z-axis mediates an anisotropic interaction which corresponds to a XXZ model interaction between two magnetic moments. In order to calculate the exchange interaction along arbitrary direction between two magnetic moments, we should obtain both transverse and longitudinal static spin susceptibilities of armchair graphene nanoribbon in the presence of electron-phonon coupling and magnetic field. The spin susceptibility components are calculated using the spin dependent Green’s function approach for Holstein model Hamiltonian. The effects of spin polarization on the dependence of exchange interaction on distance between moments are investigated via calculating correlation function of spin density operators. Our results show the influences of magnetic field on the spatial behavior of in-plane and longitudinal RKKY interactions are different in the presence of magnetic field.     

Magnetotransport through ac driven ferromagnetic graphene nanoribbons

We present a theoretical study on the spin-dependent transport through the ferromagnetic graphene nanoribbons in the presence of a magnetic and an in-plane ac electric field, and find that when the ac field is applied, in the two-terminal ferromagnetic graphene device, for the parallel configurations of the electrodes' magnetizations, the width of the even-number conductance plateaus decrease, the new conductance plateaus appear at the odd-number positions, and the even-number conductance plateaus at the high energy are quenched under the sufficiently strong ac field. In contrast, for the antiparallel configuration of the electrodes' magnetizations, the odd-plateaus of the conductance shrink, and the new plateaus developed at the even-number positions. The magnetic resistance exhibits a successive rectangular-like oscillation structure close to the band edge, whereas experiences an alternative transition between the sharp peak and dip near the zero energy with increasing the ac field strength. In the six-terminal ferromagnetic graphene device, the variations of the longitudinal and Hall resistances' plateaus as well as the addition of the new quantized plateaus with the rise of the ac field strength are also revealed.     

功能化扶手椅型石墨烯纳米带异质结的磁器件特性

石墨烯在未来纳米电子器件领域具有广泛的应用前景, 但是基于扶手椅型石墨烯纳米带(AGNR)的磁输运性质的研究还比较少. 本文理论上提出AGNR边缘桥接过渡金属Mn原子, 再用双F 原子(或双H原子)饱和形成特殊化学修饰的纳米带(AGNR-Mn-F₂或AGNR-Mn-H₂), 并运用基于第一性原理和非平衡态格林函数相结合的方法对其磁输运性质进行理论计算. 结果表明: 这两种纳米带所构成的异质结(F₂-AGNR-Mn-H₂)具有优良的磁器件特性, 即在很宽的偏压范围内, 能实现100%的自旋极化, 且在P(在左右电极垂直加上相同方向的磁场)和AP构型(在左右电极垂直加上相反方向的磁场)时, 分别具有单自旋和双自旋过滤效应; 同时发现, 这种异质结也具有双自旋二极管效应, 它的最大整流比可达到10⁸. 此外, 改变开关磁场的方向, 即从一种磁构型变换为另一种磁构型时, 能产生明显的自旋阀效应, 其巨磁阻高达10⁸%. 这意味着这种特殊的异质结能同时实现优良的自旋过滤、双自旋二极管及巨磁阻效应, 这对于发展自旋磁器件有重要意义.