First principles study of hafnium intercalation between graphene and Ir(111) substrate

The intercalation of heteroatoms between graphene and metal substrates is a promising method for integrating epitaxial graphene with functional materials. Various elements and their oxides have been successfully intercalated into graphene/metal interfaces to form graphene-based heterostructures, showing potential applications in electronic devices. Here we theoretically investigate the hafnium intercalation between graphene and Ir(111). It is found that the penetration barrier of Hf atom is significantly large due to its large atomic radius, which suggests that hafnium intercalation should be carried out with low deposition doses of Hf atoms and high annealing temperatures. Our results show the different intercalation behaviors of a large-size atom and provide guidance for the integration of graphene and hafnium oxide in device applications.     

金属衬底上高质量大面积石墨烯的插层及其机制

石墨烯作为一种新型二维材料,因其优异的性质,在科学和应用领域具有非常重要的意义.而其超高的载流子迁移率、室温量子霍尔效应等,使其在信息器件领域备受关注.如何获得高质量并且与当代硅基工艺兼容的石墨烯功能器件,是未来将石墨烯应用于电子学领域的关键.近年来,研究人员发展了一种在外延石墨烯和金属衬底之间实现硅插层的技术,将金属表面外延石墨烯高质量、大面积的特点与当代硅基工艺结合起来,实现了无需转移且无损地将高质量石墨烯置于半导体之上.通过系统的实验研究并结合理论计算,揭示了插层过程包含四个主要阶段:诱导产生缺陷、异质原子插层、石墨烯自我修复和异质原子扩散成膜,并证实了这一插层机制的普适性.拉曼和角分辨光电子能谱实验结果表明,插层后的石墨烯恢复了本征特性,接近自由状态.此外,还实现了多种单质元素的插层.不同种类的原子形成不同的插层结构,从而构成了多种石墨烯/插层异质结.这为调控石墨烯的性质提供了实验基础,也展现了该插层技术的普适性.     

Interaction of two symmetric monovacancy defects in graphene

We investigate the interactions between two symmetric monovacancy defects in graphene grown on Ru(0001) after silicon intercalation by combining first-principles calculations with scanning tunneling microscopy(STM). First-principles calculations based on free-standing graphene show that the interaction is weak and no scattering pattern is observed when the two vacancies are located in the same sublattice of graphene, no matter how close they are, except that they are next to each other. For the two vacancies in different sublattices of graphene, the interaction strongly influences the scattering and new patterns' emerge, which are determined by the distance between two vacancies. Further experiments on silicon intercalated graphene epitaxially grown on Ru(0001) shows that the experiment results are consistent with the simulated STM images based on free-standing graphene, suggesting that a single layer of silicon is good enough to decouple the strong interaction between graphene and the Ru(0001) substrate.     

Intercalation of germanium oxide beneath large-area and high-quality epitaxial graphene on Ir(111) substrate

Epitaxial growth on transition metal surfaces is an effective way to prepare large-area and high-quality graphene.However,the strong interaction between graphene and metal substrates suppresses the intrinsic excellent properties of graphene and the conductive metal substrates also hinder its applications in electronics.Here we demonstrate the decoupling of graphene from metal substrates by germanium oxide intercalation.Germanium is firstly intercalated into the interface between graphene and Ir(111) substrate.Then oxygen is subsequently intercalated,leading to the formation of a GeO_x layer,which is confirmed by x-ray photoelectron spectroscopy.Low-energy electron diffraction and scanning tunneling microscopy studies show intact carbon lattice of graphene after the GeO_x intercalation.Raman characterizations reveal that the intercalated layer effectively decouples graphene from the Ir substrate.The transport measurements demonstrate that the GeO_x layer can act as a tunneling barrier in the fabricated large-area high-quality vertical graphene/GeO_x/Ir heterostructure.     

Intercalation synthesis of cobalt silicide under a graphene layer

The silicon intercalation under single-layer graphene formed on the surface of an epitaxial Co(0001) film was investigated. The experiments were performed under conditions of ultra-high vacuum. The thickness of silicon films was varied within the range of up to 1 nm, and the temperature of their annealing was 500°C. The characterization of the samples was carried out in situ by the methods of low-energy electron diffraction, high-energy-resolution photoelectron spectroscopy using synchrotron radiation, and magnetic linear dichroism in photoemission of Co 3p electrons. New data were obtained on the evolution of the atomic and electronic structure, as well as on the magnetic properties of the system with an increase in the amount of intercalated silicon. It was shown that the intercalation under a graphene layer is accompanied by the synthesis of surface silicide Co₂Si and a solid solution of silicon in cobalt.     

Scanning Tunneling Spectroscopy of Lithium-Decorated Graphene

Lithium decoration of graphene on SiC(0001) is achieved in a surface science approach by intercalation and adsorption of the alkali metal. Spectroscopy of the differential conductance with a scanning tunneling microscope at the Li-decorated graphene surfaces does not give rise to a pairing gap at the Fermi energy, which may be expected because of the previously predicted superconducting phase [Profeta et al., Nat. Phys. 2012 , 8, 131]. Rather, pronounced gaps in the spectroscopic data of intercalated samples reflect the excitation of graphene phonons. Rationales that possibly explain this discrepancy between experimental findings and theoretical predictions are suggested.     

Influence of defects in SiC （0001） on epitaxial graphene

Defects in silicon carbide(SiC) substrate are crucial to the properties of the epitaxial graphene(EG) grown on it. Here we report the effect of defects in SiC on the crystalline quality of EGs through comparative studies of the characteristics of the EGs grown on SiC(0001) substrates with different defect densities. It is found that EGs on high quality SiC possess regular steps on the surface of the SiC and there is no discernible D peak in its Raman spectrum. Conversely, the EG on the SiC with a high density of defects has a strong D peak, irregular stepped morphology and poor uniformity in graphene layer numbers. It is the defects in the SiC that are responsible for the irregular stepped morphology and lead to the small domain size in the EG.     

Deposition of metal clusters on single-layer graphene/Ru(0001): Factors that govern cluster growth

Fabrication of nanoclusters on a substrate is of great interest in studies of model catalysts. The key factors that govern the growth and distribution of metal on graphene have been studied by scanning tunneling microscopy (STM) based on different behaviors of five transition metals, namely Pt, Rh, Pd, Co, and Au supported on the template of a graphene moiré pattern formed on Ru(0001). Our experimental findings show that Pt and Rh form finely dispersed small clusters located at fcc sites on graphene while Pd and Co form large clusters at similar coverages. These results, coupled with previous findings that Ir forms the best finely dispersed clusters, suggest that both metal–carbon (M–C) bond strength and metal cohesive energies play significant roles in the cluster formation process and that the M–C bond strength is the most important factor that affects the morphology of clusters at the initial stages of growth. Furthermore, experimental results show Au behaves differently and forms a single-layer film on graphene, indicating other factors such as the effect of substrate metals and lattice match should also be considered. In addition, the effect of annealing Rh on graphene has been studied and its high thermal stability is rationalized in terms of a strong interaction between Rh and graphene as well as sintering via Ostwald ripening.     

Modification of the electronic structure of graphene by intercalation of iron and silicon atoms

The ab initio calculations of the electronic structure of low-dimensional graphene–iron–nickel and graphene–silicon–iron systems were carried out using the density functional theory. For the graphene–Fe–Ni(111) system, band structures for different spin projections and total densities of valence electrons are determined. The energy position of the Dirac cone caused by the p _z states of graphene depends weakly on the number of iron layers intercalated into the interlayer gap between nickel and graphene. For the graphene–Si–Fe(111) system, the most advantageous positions of silicon atoms on iron are determined. The intercalation of silicon under graphene leads to a sharp decrease in the interaction of carbon atoms with the substrate and largely restores the electronic properties of free graphene.

     

Electronic structures and vibrational properties of coronene on Ru(0001): first-principles study

We calculate the configurations, electronic structures, vibrational properties at the coronene/Ru(0001) interface, and adsorption of a single Pt atom on coronene/Ru(0001) based on density functional theory calculations. The geometric structures and electronic structures of the coronene on Ru(0001) are compared with those of the graphene/Ru(0001). The results show that the coronene/Ru(0001) can be a simplified model system used to describe the interaction between graphene and ruthenium. Further calculations of the vibrational properties of coronene molecule adsorbed on Ru(0001) suggest that the phonon properties of differently corrugated regions of graphene on Ru(0001) are different. This model system is also used to investigate the selective adsorption of Pt atoms on graphene/Ru(0001). The configurations of Pt on coronene/Ru(0001) with the lowest binding energy give clues to explain the experimental observation that a Pt cluster selectively adsorbs on the second highest regions of graphene/Ru(0001). This work provides a simple model for understanding the adsorption properties and vibrational properties of graphene on Ru(0001) substrate.     

Si面4H-SiC衬底上外延石墨烯近平衡态制备

SiC热解法是制备大面积、高质量石墨烯的理想选择之一.外延石墨烯的晶体质量仍是制约其应用的关键因素之一.本文通过SiC热解法在4H-SiC(0001)衬底上制备单层外延石墨烯.通过引入氩气惰性气氛和硅蒸气,使SiC衬底表面的Si原子升华与返回概率接近平衡,外延石墨烯生长速率大大减慢,单层石墨烯的生长时间从15 min延长至75 min.测试分析表明,生长速率减慢,外延石墨烯中缺陷减少,晶体质量提高,使得外延石墨烯的电性能都得到改善,单层外延石墨烯的最高载流子迁移率达到1200 cm2/V·s,方阻604?/.以上结果表明,控制生长气氛,减慢生长速率是实现高质量外延石墨烯的可行途径之一.     

三层石墨烯及其n型和p型插层化合物的制备和拉曼光谱表征

我们利用微机械剥离方法制备了三层石墨烯.在此基础上,利用两室气体传输法,以三氯化铁和钾为化学掺杂剂,成功合成了三层石墨烯的一阶p型和n型插层化合物.三层石墨烯的高分辨率拉曼光谱具有独特的2D谱峰线形,该线形可以用作指纹来鉴别三层石墨烯.三层石墨烯一阶插层化合物的拉曼光谱表明,三氯化铁和钾的插层掺杂使得三层石墨烯的层间耦...     

Growth protocols and characterization of epitaxial graphene on SiC elaborated in a graphite enclosure

The epitaxial growth of graphene by the sublimation of Si-terminated silicon carbide (SiC) is studied inside a graphite enclosure in a radio-frequency furnace by comparing different in situ processes involving hydrogen etching or not and different growth conditions. For the growth under vacuum, even with the surface preparation of hydrogen etching, the morphology of the synthesized graphene is found full of voids and defects in the form of a multilayer graphene film. For the growth under Ar, the hydrogen etching plays a vital role to improve the graphene quality in terms of surface roughness, the number of graphene layers and the domain size. For the graphene samples grown with the proposed protocol, the original combination of micro-probe Raman spectroscopy and simultaneous optical transmission and reflection measurements reveals a detailed spatially resolved image of the graphene domains with monolayer domain size of ~5×5 µm² on about 2/3 of the total sample surface. The magnetotransport data yield charge-carrier mobilities up to 2900 cm²/Vs as found for high quality graphene on the Si-face of SiC. The observed magnetoquantum oscillations in the magnetoresistance confirm the expected behavior of single-layer graphene.     

Synthesis and characterization of SWNT-heavy alkali metal intercalation compounds,effect of host SWNTs materials

Singlewall carbon nanotubes (SWNTs) produced by electric-arc and laser ablation methods were characterized by X-ray diffraction before and after the reaction with alkali metals (M=K, Rb, and Cs). Reaction with annealed SWNTs gave MC₈ composition at saturation. The alkali metal lattice showed short range order incommensurate with graphene cylinders of SWNTs. X-ray diffractogram simulations have enabled the study of the influence of SWNTs structure on that of intercalation compounds. Chemically-purified bundles, constituted of open SWNTs, can be intercalated inside and between the tubes forming disordered structures. Annealed or pristine bundles were intercalated only between the tubes leading to short or long range ordered structure depending on host crystallinity and alkali metal (K, Rb or Cs). The expansion of the 2D SWNTs lattice after intercalation is comparable to graphite intercalation compounds. Some 2D arrangements of SWNTs and K atoms are proposed and discussed to reproduce XRD results. ¹³C NMR and ESR studies of annealed doped SWNTs emphasize the fact that the intercalation compounds of SWNTs are metallic.     

Quasi‐Freestanding Graphene on SiC(0001) by Ar‐Mediated Intercalation of Antimony: A Route Toward Intercalation of High‐Vapor‐Pressure Elements

A novel strategy for the intercalation of antimony (Sb) under the $\text{(6}\sqrt{\mathrm{3}}\times \mathrm{6}\sqrt{\mathrm{3}})R\text{30}$° reconstruction, also known as buffer layer, on SiC(0001) is reported. Using X‐ray photoelectron spectroscopy, low‐energy electron diffraction, and angle‐resolved photoelectron spectroscopy, it is demonstrated that, while the intercalation of the volatile Sb is not possible by annealing the Sb‐coated buffer layer in ultrahigh vacuum, it can be achieved by annealing the sample in an atmosphere of Ar, which suppresses Sb desorption. The intercalation leads to a decoupling of the buffer layer from the SiC(0001) surface and the formation of quasi‐freestanding graphene. The intercalation process paves the way for future studies of the formation of quasi‐freestanding graphene by intercalation of high‐vapor‐pressure elements, which are not accessible by previously known intercalation techniques, and thus provides new avenues for the manipulation of epitaxial graphene on SiC.     

Electronic structures and coronene on Ru（0001）： vibrational properties of first-principles study

We calculate the configurations,electronic structures,vibrational properties at the coronene/Ru(0001) interface,and adsorption of a single Pt atom on coronene/Ru(0001) based on density functional theory calculations.The geometric structures and electronic structures of the coronene on Ru(0001) are compared with those of the graphene/Ru(0001).The results show that the coronene/Ru(0001) can be a simplified model system used to describe the interaction between graphene and ruthenium.Further calculations of the vibrational properties of coronene molecule adsorbed on Ru(0001) suggest that the phonon properties of differently corrugated regions of graphene on Ru(0001) are different.This model system is also used to investigate the selective adsorption of Pt atoms on graphene/Ru(0001).The configurations of Pt on coronene/Ru(0001) with the lowest binding energy give clues to explain the experimental observation that a Pt cluster selectively adsorbs on the second highest regions of graphene/Ru(0001).This work provides a simple model for understanding the adsorption properties and vibrational properties of graphene on Ru(0001) substrate.     

Intercalation of Iron Atoms under Graphene Formed on Silicon Carbide

The intercalation of iron under a graphene monolayer grown on 4H-SiC(0001) is studied. The experiments have been carried out in situ under conditions of ultrahigh vacuum by low-energy electron diffraction, high-energy-resolution photoelectron spectroscopy using synchrotron radiation, and near carbon K-edge X-ray absorption spectroscopy. The deposited iron film thicknesses have been varied within 0.1–2 nm and the sample temperatures from room temperature to 700°C. It is shown that the intercalation process begins at temperatures higher than ~350°C. In this case, it is found that intercalated iron atoms are localized not only between graphene and a buffer layer coating SiC, but also under the buffer layer itself. The optimal conditions of the intercalation are realized in the range 400–500°C, because, at higher temperatures, the system becomes unstable due to the chemical interaction of the intercalated iron with silicon carbide. The inertness of the intercalated films to action of oxygen is demonstrated.

     

The physics of epitaxial graphene on SiC(0001)

Various physical properties of epitaxial graphene grown on SiC(0001) are studied. First, the electronic transport in epitaxial bilayer graphene on SiC(0001) and quasi-free-standing bilayer graphene on SiC(0001) is investigated. The dependences of the resistance and the polarity of the Hall resistance at zero gate voltage on the top-gate voltage show that the carrier types are electron and hole, respectively. The mobility evaluated at various carrier densities indicates that the quasi-free-standing bilayer graphene shows higher mobility than the epitaxial bilayer graphene when they are compared at the same carrier density. The difference in mobility is thought to come from the domain size of the graphene sheet formed. To clarify a guiding principle for controlling graphene quality, the mechanism of epitaxial graphene growth is also studied theoretically. It is found that a new graphene sheet grows from the interface between the old graphene sheets and the SiC substrate. Further studies on the energetics reveal the importance of the role of the step on the SiC surface. A first-principles calculation unequivocally shows that the C prefers to release from the step edge and to aggregate as graphene nuclei along the step edge rather than be left on the terrace. It is also shown that the edges of the existing graphene more preferentially absorb the isolated C atoms. For some annealing conditions, experiments can also provide graphene islands on SiC(0001) surfaces. The atomic structures are studied theoretically together with their growth mechanism. The proposed embedded island structures actually act as a graphene island electronically, and those with zigzag edges have a magnetoelectric effect. Finally, the thermoelectric properties of graphene are theoretically examined. The results indicate that reducing the carrier scattering suppresses the thermoelectric power and enhances the thermoelectric figure of merit. The fine control of the Fermi energy position is thought to be key for the practical use of graphene as a thermoelectric material, which could be achieved with epitaxial graphene. All of these results reveal that epitaxial graphene is physically interesting.     

Role of substrate,temperature, and hydrogen on the flame synthesis of graphene films

Graphene films are grown in open-atmosphere on metal substrates using a multiple inverse-diffusion flame burner with methane as fuel. Substrate material (i.e. copper, nickel, cobalt, iron, and copper–nickel alloy), along with its temperature and hydrogen treatment, strongly impacts the quality and uniformity of the graphene films. The growth of few-layer graphene (FLG) occurs in the temperature range 750–950 °C for copper and 600–850 °C for nickel and cobalt. For iron, the growth of graphene is not exclusively observed. The variation of graphene quality for different substrates is believed to be due primarily to the difference in carbon solubility between the metals.     

石墨烯过渡层对金属/SiC接触肖特基势垒调控的第一性原理研究

由于SiC禁带宽度大,在金属/SiC接触界面难以形成较低的势垒,制备良好的欧姆接触是目前SiC器件研制中的关键技术难题,因此,研究如何降低金属/SiC接触界面的肖特基势垒高度(SBH)非常重要.本文基于密度泛函理论的第一性原理赝势平面波方法,结合平均静电势和局域态密度计算方法,研究了石墨烯作为过渡层对不同金属(Ag,Ti,Cu,Pd,Ni,Pt)/SiC接触的SBH的影响.计算结果表明,单层石墨烯可使金属/SiC接触的SBH降低;当石墨烯为2层时,SBH进一步降低且Ni,Ti接触体系的SBH呈现负值,说明接触界面形成了良好的欧姆接触;当石墨烯层数继续增加,SBH不再有明显变化.通过分析接触界面的差分电荷密度以及局域态密度,SBH降低的机理可能主要是石墨烯C原子饱和了SiC表面的悬挂键并降低了金属诱生能隙态对界面的影响,并且接触界面的石墨烯及其与金属相互作用形成的混合相具有较低的功函数.此外,SiC/石墨烯界面形成的电偶极层也可能有助于势垒降低.