Optical properties of amorphous Si/SiO2superlattice

Amorphous Si/SiO₂(a-Si/SiO₂) superlattices have been fabricated by the magnetron sputtering technique. The superlattice with an Si layer thickness of 1.8 nm has been characterized by transmission electron microscopy (TEM). The result indicates that most of the regions in the Si layer consist of amorphous phase, while regular structure appears in some local regions. This is in agreement with the Raman scattering spectroscopy. The optical absorption spectrum and photoluminescence (PL) spectrum have been measured. Moreover, the third-order optical nonlinearity χ⁽³⁾of this superlattice has been measured. To our knowledge, this is the first investigation of the nonlinear absorption and refractive index of an a-Si/SiO₂superlattice using the Z -scan technique. The real and imaginary parts of χ⁽³⁾have been found to be 1.316  ×  10 ^− 7eus and  − 5.596  ×  10 ^− 7eus, respectively, which are about two orders of magnitude greater than those of porous silicon. The results may be attractive for potential application in electro-optics devices.     

Controlled fabrication of Si nanostructures by high vacuum electron beam annealing

Silicon nanostructures, called Si nanowhiskers, have been successfully synthesized on Si(1 0 0) substrate by high vacuum electron beam annealing (EBA). Detailed analysis of the Si nanowhisker morphology depending on annealing temperature, duration and the temperature gradients applied in the annealing cycle is presented. A correlation was found between the variation in annealing temperature and the nanowhisker height and density. Annealing at 935 °C for 0 s, the density of nanowhiskers is about 0.2 μm⁻² with average height of 2.4 nm grow on a surface area of 5×5 μm, whereas more than 500 nanowhiskers (density up to 28 μm⁻²) with an important average height of 4.6 nm for field emission applications grow on the same surface area for a sample annealed at 970 °C for 0 s. At a cooling rate of −50 °C s⁻¹ during the annealing cycle, 10–12 nanowhiskers grew on a surface area of 5×5 μm, whereas close to 500 nanowhiskers grew on the same surface area for samples annealed at the cooling rate of −5 °C s⁻¹. An exponential dependence between the density of Si nanowhiskers and the cooling rate has been found. At 950 °C, the average height of Si nanowhiskers increased from 4.0 to 6.3 nm with an increase of annealing duration from 10 to 180 s. A linear dependence exists between the average height of Si nanowhiskers and annealing duration. Selected results are presented showing the possibility of controlling the density and the height of Si nanowhiskers for improved field emission properties by applying different annealing temperatures, durations and cooling rates.     

3 MeV electron irradiation-induced defects in CuInSe2 thin films

3 MeV electron irradiation induced-defects in CuInSe₂ (CIS) thin films have been investigated. Both of the carrier concentration and Hall mobility were decreased as the electron fluence exceeded 1×10¹⁷ cm⁻². The carrier removal rate was estimated to be about 1 cm⁻¹. To evaluate electron irradiation-induced defect, the electrical properties of CIS thin films before and after irradiation were investigated between 80 and 300 K. From the temperature dependence of the carrier concentration in non-irradiated thin films, we obtained N_D=1.8×10¹⁷ cm⁻³, N_A=1.7×10¹⁶ cm⁻³ and E_D=18 meV from the SALS fitting to the experimental data on the basis of the charge balance equation. After irradiation, a new defect level was formed, and N_T0=1.4×10¹⁷ cm⁻³ and E_T=54 meV were also obtained from the same procedure. From the temperature dependence of Hall mobility, the ionized impurity density was discussed before and after the irradiation.     

Investigating gate metal induced reduction of surface donor density in GaN/AlGaN/GaN heterostructure by electroreflectance spectroscopy

The internal field of GaN/AlGaN/GaN heterostructure on Si-substrate was investigated by varying the thickness of an undoped-GaN capping layer using electroreflectance spectroscopy. The four samples investigated are AlGaN/GaN heterostructure without a GaN cap layer (reference sample) and three other samples with GaN/AlGaN/GaN heterostructures in which the different thickness of GaN cap layer (2.7 nm, 7.5 nm, and 12.4 nm) has been considered. The sheet carrier density (n_s) of a two-dimensional electron gas has decreased significantly from 4.66 × 10¹² cm⁻² to 2.15 × 10¹² cm⁻² upon deposition of a GaN capping layer (12.4 nm) over the reference structure. Through the analysis of internal fields in each GaN capping and AlGaN barrier layers, it has been concluded that the undiminished surface donor states (n_s) of a reference structure and the reduced n_s caused by the Au gate metal are approximately 5.66 × 10¹² cm⁻² and 1.08 × 10¹² cm⁻², respectively.     

Ion-implanted Ge:B far-infrared blocked-impurity-band detectors

Ge blocked-impurity-band (BIB) photoconductors have the potential to replace stressed Ge:Ga photoconductors for far-infrared astronomical observations. A novel planar BIB device has been fabricated in which ion-implanted boron is used to form the blocking contact and absorbing layers of necessary purity and compensation. The effect of doping in the infrared active layer on the far-infrared photoconductive response has been studied, and the optimum doping concentration is found to be ∼4 × 10¹⁶ cm⁻³. Devices doped near this concentration show good blocking characteristics with low dark currents. The spectral response extends to ∼45 cm⁻¹, clearly showing the formation of an impurity band. Under low background testing conditions these devices attain a responsivity of 0.12 A/W and NEP of 5.23 × 10⁻¹⁵ W/Hz^1/2.     

Silicon microspheres for electronic and photonic integration

Silicon microspheres are transparent in the near-infrared telecommunication bands and can be used for electrophotonic integration. We have experimentally observed blue shifts in resonance wavelengths of an electrically driven silicon microsphere of 500 μm in radius, in the near-infrared. We have used a distributed feed back (DFB) laser operating at 1475 nm, and applied electrical potential differences up to 9 V to the silicon microsphere. We have observed blue shifts in the resonance wavelengths up to 0.05 nm, which corresponds to a change in the refractive index of 10⁻⁴.     

Mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers – Grown on GaAs,using an interfacial misfit array,and on native GaSb

InAsSb-based nBn photodetectors were fabricated on GaAs, using the interfacial misfit (IMF) array growth mode, and on native GaSb. At −0.1 V operating bias, 200 K dark current densities of 1.4 × 10⁻⁵ A cm⁻² (on GaAs) and 4.8 × 10⁻⁶ A cm⁻² (on GaSb) were measured. At the same temperature, specific detectivity (D^*) figures of 1.2 × 10¹⁰ Jones (on GaAs) and 7.2 × 10¹⁰ Jones (on GaSb) were calculated. Arrhenius plots of the dark current densities yielded activation energies of 0.37 eV (on GaAs) and 0.42 eV (on GaSb). These values are close to the 4 K bandgap of the absorption layers (0.32–0.35 eV) indicating diffusion limited dark currents and small valence band offsets. Significantly, these devices could be used for mid-infrared focal plane arrays operating within the temperature range of cost-effective thermoelectric coolers.     

Ionic and electronic conductivities,stability and thermal expansion of La10 − x(Si,Al)6O26 ± δ solid electrolytes

Apatite-type La_10 − xSi_6 − yAl_yO_{27 − 3x/2 − y/2} (x = 0–0.33; y = 0.5–1.5) exhibit predominant oxygen ionic conductivity in a wide range of oxygen partial pressures. The conductivity of silicates containing 26.50–26.75 oxygen atoms per formula unit is comparable to that of gadolinia-doped ceria at 770–870 K. The average thermal expansion coefficients are (8.7–10.8) × 10^− 6 K^− 1 at 373–1273 K. At temperatures above 1100 K, silicon oxide volatilization from the surface layers of apatite ceramics and a moderate degradation of the ionic transport with time are observed under reducing conditions, thus limiting the operation temperature of Si-containing solid electrolytes.     

Effect of temperature on the current–voltage characteristics of GaAs/AlGaAs quantum cascade photodetectors

Transport of electrons within a quantum cascade photodetector structure takes place with the help of the scattering of electrons by phonons. By calculating scattering rates of the electrons mediated by longitudinal optical phonons (the dominant scattering mechanism), current–voltage characteristic of a quantum cascade photodetector is calculated. The results indicate that with the increase of bias voltage dark current increases rapidly, then the increase becomes slow at higher voltages, whilst photocurrent remains approximately constant with only slight variations in its magnitude. With the increase of temperature from 80 K to 160 K dark current increases by about two orders of magnitude while photocurrent varies slightly, so that at the illuminating power of 1 mW/m² photocurrent density increases in mean from 1.10×10⁻⁹ A/cm² at 80 K to 1.14×10⁻⁹ A/cm² at 160 K and then decreases to 1.03×10⁻⁹ A/cm² at 240 K. Thus the responsivity of the detector varies only slightly with temperature. However owing to the decrease in the resistivity of the photodetector with the increase of temperature, Johnson noise limited detectivity decreases considerably.     

InGaAsP/InP photodetectors targeting on 1.06 μm wavelength detection

InP-based InGaAsP photodetectors targeting on 1.06 μm wavelength detection have been grown by gas source molecular beam epitaxy and demonstrated. For the detector with 200 μm mesa diameter, the dark current at 10 mV reverse bias and R₀A are 8.89 pA (2.2 × 10⁻⁸ A/cm²) and 3.9 × 10⁵ Ω cm² at room temperature. The responsivity and detectivity of the InGaAsP detector are 0.30 A/W and 1.45 × 10¹² cm Hz^1/2 W⁻¹ at 1.06 μm wavelength. Comparing to the reference In_0.53Ga_0.47As detector, the dark current of this InGaAsP detector is about 570 times lower and the detectivity is more than ten times higher, which agrees well with the theoretical estimation.     

A miniaturized prototype of resonant banana-shaped photoacoustic cell for gas sensing

A resonant photoacoustic cell intended for laser-spectroscopy gas sensing is represented. This cell is a miniature imitation of a macro-scale banana-shaped cell developed previously. The parameters, which specify the cavity shape, are chosen so as not only to provide optimal cell operation at a selected acoustic resonance but also to reduce substantially the cell sizes. A miniaturized prototype cell (the volume of acoustic cavity of ∼5 mm³) adapted to the narrow diffraction-limited beam of near-infrared laser is produced and examined experimentally. The noise-associated measurement error and laser-initiated signals are studied as functions of modulation frequency. The background signal and the useful response to light absorption by the gas are analyzed in measurements of absorption for ammonia in nitrogen flow with the help of a pigtailed DFB laser diode oscillated near a wavelength of 1.53 μm. The performance of prototype operation at the second longitudinal acoustic resonance (the resonance frequency of ∼32.9 kHz, Q-factor of ∼16.3) is estimated. The noise-limited minimal detectable absorption normalized to laser-beam power and detection bandwidth is ∼8.07 × 10⁻⁸ cm⁻¹ W Hz^−1/2. The amplitude of the background signal is equivalent to an absorption coefficient of ∼2.51 × 10⁻⁵ cm⁻¹. Advantages and drawbacks of the cell prototype are discussed. Despite low absorption-sensing performance, the produced miniaturized cell prototype shows a good capability of gas-leak detection.     

Transport and phase dynamics of poly(vinyl pyrrolidone) doped plastically crystalline N-methyl-N-propylpyrrolidinium tetrafluoroborate

The plastic crystal phase forming N-methyl-N-propylpyrrolidinium tetrafluoroborate organic salt (P₁₃BF₄) was combined with 2, 5 and 10 wt.% poly(vinyl pyrrolidone) (PVP). The ternary 2 wt.% PVP/2 wt.% LiBF₄/P₁₃BF₄ was also investigated. Thermal analysis, conductivity, optical thermomicroscopy, and Nuclear Magnetic Resonance (¹¹B, ¹⁹F, ¹H, ⁷Li) were used to probe the fundamental transport processes. Both the onset of phase I and the final melting temperature were reduced with increasing additions of PVP. Conductivity in phase I was 2.6 × 10^− 4 S cm^− 1 5.2 × 10^− 4 S cm^− 1 1.1 × 10^− 4 S cm^− 1 and 3.9 × 10^− 5 S cm^− 1 for 0, 2, 5 and 10 wt.%PVP/P₁₃BF₄, respectively. Doping with 2 wt.% LiBF₄ increased the conductivity by up to an order of magnitude in phase II. Further additions of 2 wt.% PVP slightly reduced the conductivity, although it remained higher than for pure P₁₃BF₄.     

High mobility I− / I3− redox couple in a molecular plastic crystal: A potential new generation of electrolyte for solid-state photoelectrochemical cells

A series of new electrolyte materials based on a molecular plastic crystal doped by different iodide salts together with iodine have been prepared and characterized by thermal analysis, ionic conductivity, electrochemical and solid-state NMR diffusion measurements. In these materials, the plastic crystal phase of succinonitrile acts as a good matrix for the quaternary ammonium based iodides and iodine and appears to act in some cases as a solid-state “solvent” for the binary dopants. The materials were prepared by mixing the components in the molten state with subsequent cooling into the plastic crystalline state. This resulted in waxy-solid electrolytes in the temperature range from − 40 to 60 °C. The combination of structural variation of the cations, and fast redox couple diffusion (comparable with liquid-based electrolytes), as well as a high ionic conductivity of up to 3 × 10^− 3 S cm^− 1 at ambient temperature, make these materials very attractive for potential use in solid-state photoelectrochemical cells.     

Oxygen diffusion and surface exchange studies on (La0.75Sr0.25)0.95Cr0.5Mn0.5O3−δ

Oxygen tracer diffusion coefficient (D^⁎) and surface exchange coefficient (k^⁎) have been measured for (La_0.75Sr_0.25)_0.95Cr_0.5Mn_0.5O_3−δ using isotopic exchange and depth profiling by secondary ion mass spectrometry technique as a function of temperature (700–1000 °C) in dry oxygen and in a water vapour-forming gas mixture. The typical values of D^⁎ under oxidising and reducing conditions at ∼ 1000 °C are 4 × 10^− 10 cm² s^− 1 and 3 × 10^− 8 cm² s^− 1 respectively, whereas the values of k^⁎ under oxidising and reducing conditions at ∼ 1000 °C are 5 × 10^− 8 cm s^− 1 and 4 × 10^− 8 cm s^− 1 respectively. The apparent activation energies for D^⁎ in oxidising and reducing conditions are 0.8 eV and 1.9 eV respectively.     

Synthesis of ammonia at atmospheric pressure with Ce0.8M0.2O2−δ (M = La,Y, Gd,Sm) and their proton conduction at intermediate temperature

Ionic conduction in fluorite-type structure oxide ceramics Ce_0.8M_0.2O_2−δ (M = La, Y, Gd, Sm) at temperature 400–800 °C was systematically studied under wet hydrogen/dry nitrogen atmosphere. On the sintered complex oxides as solid electrolyte, ammonia was synthesized from nitrogen and hydrogen at atmospheric pressure in the solid states proton conducting cell reactor by electrochemical methods, which directly evidenced the protonic conduction in those oxides at intermediate temperature. The rate of evolution of ammonia in Ce_0.8M_0.2O_2−δ (M = La, Y, Gd, Sm) is up to 7.2 × 10^− 9, 7.5 × 10^− 9, 7.7 × 10^− 9, 8.2 × 10^− 9 mol s^− 1 cm^− 2, respectively.     

Magnetic tuning of exciton–photon resonance in II–VI microcavities

We demonstrate the effectiveness of the giant Zeeman effect in II–VI semimagnetic semiconductors to tune the exciton resonance of quantum wells onto the Fabry–Pérot resonance of a microcavity. A large oscillator strength of 3 × 10¹³cm⁻²per quantum well is deduced from the measured 10.6 meV vacuum Rabi splitting.     

Dielectric relaxation in NH4HSO4 above room temperature

The dispersion curves of the dielectric response of NH₄HSO₄ show that the corrected imaginary part of permittivity, εʺ, and its real part ε′ versus frequency reveal a dielectric relaxation around 9.1 × 10⁵ Hz at 31 °C, which shifts to higher frequencies (∼ 10⁶ Hz) as the temperatures increases. The relaxation frequency shows an activated relaxation process over the temperature range 31–83 °C with activation energy E_a = 0.14 eV, which is close to that derived from the dc conductivity. We suggest that the observed dielectric relaxation could be produced by the H⁺ jump and SO₄⁻ reorientation that cause distortion and change the local lattice polarizability inducing dipoles like HSO₄⁻.     

100 MeV Si8+ ion induced luminescence and thermoluminescence of nanocrystalline Mg2SiO4:Eu3+

Nanoparticles of Mg₂SiO₄:Eu³⁺ have been prepared by the solution combustion technique and the grain size estimated by PXRD is found to be in the range 40–50 nm. Ionoluminescence (IL) studies of Mg₂SiO₄:Eu³⁺ pellets bombarded with 100 MeV Si⁸⁺ ions with fluences in the range 1.124–22.48×10¹² ions cm^?2 are carried out at IUAC, New Delhi, India. Five prominent IL bands with peaks at 580 nm, 590 nm, 612 nm, 655 nm and 705 nm are recorded. These characteristic emissions are attributed to the luminescence centers activated by Eu³⁺ cations. It is found that IL intensity decreases rapidly in the beginning. Later on, the intensity decreases slowly with further increase of ion fluence. The reduction in the ionoluminescence intensity with increase of ion fluence might be attributed to degradation of Si–O (ν₃) and Si–O (2ν₃) bonds present on the surface of the sample. The red emission with peak at 612 nm is due to characteristic emission of ⁵D₀→⁷F₂ of the Eu³⁺ cations. Thermoluminescence (TL) studies of Mg₂SiO₄:Eu³⁺ pellets bombarded with 100 MeV Si⁸⁺ cations with fluences in the range 5×10¹¹ ions cm^?2 to 5×10¹³ ions cm^?2 are made at RT. Two prominent and well resolved TL glows with peaks at ～220 °C and ～370 °C are observed. It is observed that TL intensity increases with increase of ion fluence. This might be due to creation of new traps during swift heavy ion irradiation.     

Monochromatic soft X-ray-induced reactions of CCl2F2 adsorbed on Si(111)-7 × 7 near the Si(2p) edge

Continuous-time photoelectron spectroscopy (PES) and continuous-time core-level photon-stimulated desorption (PSD) spectroscopy were used to study the monochromatic soft X-ray-induced reactions of CCl₂F₂ molecules adsorbed on Si(111)-7 × 7 at 30 K (CCl₂F₂ dose = 2.0 × 10¹⁴ molecules/cm², ~ 0.75 monolayer) near the Si(2p) core level. Evolution of adsorbed CCl₂F₂ molecules was monitored by using continuous-time photoelectron spectroscopy at two photon energies of 98 and 120 eV to deduce the photolysis cross section as a function of energy. It was found that the photolysis cross sections for 98 and 120 eV photons are _~1.4 × 10^? 18 and ~ 8.0 × 10^? 18 cm², respectively. Sequential F⁺ PSD spectra obtained by using continuous-time core-level photon-stimulated desorption spectroscopy in the photon energy range of 98–110 eV show the variation of their shapes with photon exposure and depict the formation of surface SiF species. The dissociation of CCl₂F₂ molecules adsorbed on Si(111)-7 × 7, irradiated by monochromatic soft X-ray in the photon energy range of 98–110 eV, is mainly due to dissociative electron attachment and indirect dipolar dissociation induced by photoelectrons emitted from the silicon surface.