Theoretical study of charge-exchange and excitation processes in collisions of He<Superscript>+</Superscript> ions with C<Superscript>5+</Superscript>, N<Superscript>6+</Superscript>, and O<Superscript>7+</Superscript> hydrogen-like ions

Data on the cross sections for single-electron charge exchange and excitation in collisions of He⁺ ions with C⁵⁺, N⁶⁺, and O⁷⁺ ions in the He⁺ ion energy range of 0.2–3.0 MeV are obtained for the first time. The cross sections for the single-electron charge transfer into the singlet and triplet 1snl states of C⁴⁺, N⁵⁺, and O⁶⁺ (2≤n≤5) ions and for the 1s → 2p _{0, ±1} electronic excitation of He⁺(1s) ions are calculated. The calculations were performed by solving close-coupling equations on the basis of ten two-electron quasi-molecular states.     

Surface characteristics of V-Ga alloys after irradiation by Ar<Superscript>+</Superscript> and N<Superscript>+</Superscript> ions

V-5Ga-6Cr and V-5Ga-0.05Ce vanadium alloys irradiated by Ar⁺ and N⁺ ions with energies of 20 keV have been investigated. Irradiation by Ar⁺ and N⁺ ions leads to strengthening of the surface layers of samples. Their thicknesses exceed the projectile ranges of these ions (16.4 and 32.8 nm, respectively) in vanadium by more than two orders of magnitude. The experimentally determined penetration depth of argon ions is less that 70 nm. The sample side irradiated by Ar⁺ ions has a predominant orientation of crystallites in the (100) and (211) planes, while the unirradiated sample has a (110) surface. The lattice parameter of the irradiated sample does not differ from that of the initial sample. Possible mechanisms by which modified deep layers are formed during ion bombardment are discussed.     

Hydrogen-enhanced recrystallization in N<Superscript>+</Superscript>-implanted GaAs

The hydrogen-enhanced recrystallization during thermal annealing in N⁺-implanted GaAs has been studied by combinatorial implantation process. Raman spectroscopy was used to study the crystallization properties of a set of hydrogenated cells on the N⁺-implanted GaAs wafer. A whole competitive process between H⁺ implantation-induced damage and recovery in the regrowth process of amorphous GaAs was observed within the proton dose region of 1.6×10¹⁵ to 1.1×10¹⁷ cm^-2. In H⁺ dose region of 2.1×10¹⁶ to 5.4×10¹⁶ cm^-2, H-enhanced recovery of crystal dominates the regrowth process. The crystal quality is better than that of unhydrogenated cell of N⁺-implanted GaAs in the H⁺ dose range from 4.7×10¹⁶ to 8.1×10¹⁶ cm^-2. It is suggested that the vacancy supersaturation produced during hydrogen irradiation is dominantly responsible for the enhancement of thermal regrowth in the N⁺-implanted GaAs. Both the crystallization and amorphization process are clearly observed in different proton implantation dose regions. PACS 61.72.Vv; 63.20.Dj; 81.05.Ea     

Electron impact dissociation of ND<Superscript>+</Superscript>: formation of D<Superscript>+</Superscript>

Absolute cross sections for electron impact dissociation of ND⁺ leading to the formation of D⁺ have been measured by applying the animated electron-ion beam method in the energy range from the reaction threshold up to 2.5 keV. The maximum inclusive cross section is observed to be (16.8 ± 0.8) × 10⁻¹⁷ cm² at the electron energy of 65.1 eV. The appearance energy for the D⁺ production is measured to be (4.0 ± 0.5) eV. Collected data are analyzed in details by means of an original procedure in order to determine separately the contributions of dissociative channels. A specific Monte Carlo modeling has been developed, which is proven to reconstruct adequately the dissociative ionization cross section. The present energy thresholds provide information about the ground and excited states of the molecular ion, as well as about the possible population of the vibrational levels. The reaction D₂(v) + N⁺ (or H₂(v) + N⁺) is a probable source for that population and it constitutes the first step of the molecular activated processes, so the corresponding chain of reactions has to be considered to study the chemistry of plasma sources.     

Secondary Electron and Negative-Ion Emission from Metal Surface under the Bombardment by Positive Ions (H<Superscript>+</Superscript>, Cl<Superscript>+</Superscript>, HCl<Superscript>+</Superscript>)

A trap for positive ions (H⁺, Cl⁺, HCl⁺) is created within a time-of-flight mass spectrometer. The yields of secondary electrons and negative ions (HCl^?, H^?) formed due to forward and backward scattering of positive ions by steel wire at different kinetic energies (200–750 eV) are measured.     

<Superscript>10</Superscript>B<Superscript>+</Superscript>-ion implantation into photoresist

100-keV ¹⁰B⁺ ions were implanted into photoresist in different directions at a fluence of 1×10¹⁴ cm^-2, and their depth distribution was determined by means of the neutron depth profiling technique. In no case were the projectile ions found to come to rest according to their predicted implantation profiles. Instead, they are always found to undergo considerable long-range migration. During the irradiation process this motion appears to be enhanced by the radiation damage, and during the subsequent annealing steps one deals with thermal diffusion. The implant redistribution is always found to be governed strongly by the self-created damage, insofar as both electronic and nuclear defects in the polymer act as trapping centers. The implant redistribution shows a pronounced directional dependence, essentially as a consequence of the spatial distribution of the electronic energy loss. The changes of the nuclear defect distribution during thermal annealing are studied by a specially developed tomographic method in three dimensions. PACS 61.72.Ww; 61.80.Jh; 61.41.+e; 66.30.-h; 66.30.Jt     

Kinetics of radiation-induced segregation in 12Cr-MoWSiVNbB steel after Ni<Superscript>++</Superscript> and He<Superscript>+</Superscript> ion irradiation

Ferritic-martensitic 12Cr-MoWSiVNbB (EP-823) steel was irradiated with 7 MeV Ni⁺⁺ ions within fluence interval 5 × 10¹⁸−5.4 × 10¹⁹ ions/m² and with 30 and 70 keV He⁺ ions within fluence interval 10²⁰–10²¹ ions/m² at 500°C. Results from a comparative analysis of Cr and Si radiation-induced segregation profiles near the surface are presented. Dependence of the amount of surface segregation on damage dose, displacement generation rate, and radiation-induced point defects concentration is established.     

Modification of GaAs by medium-energy N<Stack><Subscript>2</Subscript><Superscript>+</Superscript></Stack> ions

The modification of GaAs with a 2500-eV beam containing N ₂ ⁺ and Ar⁺ ions is examined with Auger electron spectroscopy. Most implanted nitrogen atoms are found to react with the matrix, substituting arsenic atoms to produce a several-nanometer-thick layer of the single-phase GaAs_1−x N_x (x=6%) solid solution. The GaN phase is absent. Displaced arsenic atoms and nitrogen atoms unreacted with the matrix are present in the layer and on its surface. The former segregate, whereas the latter form molecules.     

Effects of Li<Superscript>+</Superscript> co-doping on the concentration quenching threshold and luminescence of GdVO<Subscript>4</Subscript>:Eu<Superscript>3+</Superscript> nanophosphors

Europium ions (Eu³⁺) and Lithium ions (Li⁺) codoped gadolinium orthovanadate with a tetragonal phase had been successfully synthesized by an efficient hydrothermal method. X-ray diffraction (XRD), scanning electron microscopy (SEM), and photoluminescence (PL) were utilized to characterize the microstructure, morphology, and luminescent properties of as-prepared samples. The various concentrations (0～14 at.%) of Li ions were applied to investigate the effect of Li⁺ co-doping concentration on the crystalline structure, microstructure, and emission intensity of GdVO₄:Eu³⁺, Li⁺ nanophosphors. The results demonstrated that Li⁺ ion co-doping changes the lattice parameters in two different ways. Moreover, the optical photoluminescent property was obtained when the Li⁺ co-doping concentration is 10 at.%. The influence of Li⁺ co-doping on the concentration quenching effect of Eu³⁺ was discussed as well. The concentration quenching threshold of Eu³⁺ was increased distinguishably. The potential mechanism was proposed in this paper.     

I. Electron-impact ionization and dissociation of C<Subscript>2</Subscript>H<Stack><Subscript>2</Subscript><Superscript>+</Superscript></Stack> and C<Subscript>2</Subscript>D<Stack><Subscript>2</Subscript><Superscript>+</Superscript></Stack>

Absolute cross-sections for electron-impact ionization and dissociation of C₂H₂⁺ and C₂D₂⁺ have been measured for electron energies ranging from the corresponding thresholds up to 2.5 keV. The animated crossed beams experiment has been used. Light as well as heavy fragment ions that are produced from the ionization and the dissociation of the target have been detected for the first time. The maximum of the cross-section for single ionization is found to be (5.56 ± 0.03)× 10^-17 cm² around 140 eV. Cross-sections for dissociation of C₂ H₂⁺ (C₂D₂⁺) to ionic products are seen to decrease for two orders of magnitude, from C₂D⁺ (12.6 ± 0.3) × 10^-17 cm² over CH⁺(9.55 ± 0.06) × 10^-17 cm², C⁺ (6.66 ± 0.05) × 10^-17 cm², C₂⁺ (5.36 ± 0.27) × 10^-17 cm², H⁺ (4.73 ± 0.29) × 10^-17 cm² and CH₂⁺ (4.56 ± 0.27) × 10^-18 cm² to H₂⁺ (5.68 ± 0.49) × 10^-19 cm². Absolute cross-sections and threshold energies have been compared with the scarce data available in the literature.     

A New Fluorescent Chemosensor Detecting Co<Superscript>2+</Superscript> and K<Superscript>+</Superscript> in DMF Buffered Solution

A new fluorescent chemosensor 2-(2-thiophene)imidazo [4,5,f]-1,10-phenanthroline (L) was prepared and characterized. By adding univalent or divalent metal ions such as Na⁺, K⁺, Mg²⁺, Ba²⁺, Mn²⁺, Fe²⁺, Co²⁺, Ni²⁺, Cu²⁺, Ag⁺, Zn²⁺, Cd²⁺ and Hg²⁺ ions into the solution of L in DMF under buffered conditions with the working pH ranging from 7.0 to 8.0, we found that L could be used to detect K⁺ ratiometricly and it could also be applied to sense Co²⁺ with the phenomenon of fluorescence quenching of L. While the response behavior of L was not discernibly affected by other examined metal ions.     

II. Electron-impact dissociative excitation of C<Subscript>2</Subscript>H<Stack><Subscript>2</Subscript><Superscript>+</Superscript></Stack> and C<Subscript>2</Subscript>D<Stack><Subscript>2</Subscript><Superscript>+</Superscript></Stack>

Absolute cross-sections for electron-impact dissociative ionization of C₂ H₂⁺ and C₂ D₂⁺ to CH⁺, C⁺, C₂⁺ , H⁺, CH₂⁺ and C₂D⁺ fragments are determined for electron energies ranging from the corresponding threshold to 2.5 keV. Results obtained in a crossed beams experiment are analyzed to estimate the contribution of dissociative ionization to each fragment formation. The dissociative ionization cross sections are seen to decrease for more than an order of magnitude, from CH⁺ (5.37±0.10) × 10^-17 cm² over C⁺ (4.19± 0.16) × 10^-17 cm², C₂D⁺ (3.94±0.38) × 10^-17 cm², C₂⁺ (3.82±0.15) × 10^-17 cm² and H⁺ (3.37±0.21) × 10^-17 cm² to CH₂⁺ (2.66±0.14) × 10^-18 cm². Kinetic energy release distributions of fragment ions are also determined from the analysis of the product velocity distribution. Cross section values, threshold energies and kinetic energies are compared with the data available from the literature. Conforming to the scheme used in the study of the dissociative excitation of C₂H₂⁺ ( C₂ D₂⁺ )\left( {\rm C}_2 {\rm D}_2^+ \right), the cross-sections are presented in a format suitable for their implementation in plasma simulation codes.     

Theoretical study of photoionization of the isoelectronic sequence Rb<Superscript>+</Superscript>, Sr<Superscript>2+</Superscript>, and Y<Superscript>3+</Superscript>

The photoionization cross sections for the 4p shell of ions of the Kr isoelectronic sequence Rb⁺, Sr²⁺, and Y³⁺ are calculated. The configuration interaction theory and the perturbation theory are used to describe the many-electron effects. The relativistic effects are taken into account in the Pauli-Fock approximation. The calculated resonance structure of photoionization cross sections for the 4p shell in the region below the 4s threshold associated with the autoionization of the 4s-np singly excited states and the 4p4p-nln′l′ doubly excited states reproduces the results of recent measurements of total photoabsorption cross sections for the Rb⁺, Sr²⁺, and Y³⁺ ions. It is found that, as the nuclear charge in the isoelectronic sequence increases, the ratio between the direct and correlation parts of amplitudes of the 4s-(n/?)p transition changes and, as the consequence, the minimum of the photoionization cross section of the 4s shell shifts from the continuous spectrum to the region of states of discrete spectrum. This accounts for the strong changes in the shape of the 4s-np resonances in the photoionization cross sections for the 4p shell of Rb⁺, Sr²⁺, and Y³⁺, as well as the distinction between the shapes of the 4s-6p _1/2 mirror resonance in the partial 4p _1/2 and 4p _3/2 photoionization cross sections for the Y³⁺ ion which do not suppress each other in the total photoionization cross section, as is the case for similar resonances in Rb⁺ and Sr²⁺.     

Electron-impact ionization and dissociation of C<Subscript>2</Subscript>D<Superscript>+</Superscript>

Absolute cross sections for electron-impact single ionization, dissociative excitation and dissociative ionization of the ethynyl radical ion (C₂D⁺)^+) have been measured for electron energies ranging from the corresponding reaction thresholds to 2.5 keV. The animated crossed electron-ion beam experiment is used and results have been obtained for the production of C₂D²⁺, C²⁺, C₂⁺_2^+ , CD⁺, C⁺ and D⁺. The maximum of the cross section for single ionization is found to be (2.01 ± 0.02) × 10^-17 cm², at the incident electron energy of 105 eV. Absolute total cross sections for the various singly charged fragments production are observed to decrease by a factor of almost three, from the largest cross-section measured for C⁺, over C₂⁺_2^+ and CD⁺ down to that of D⁺. The maxima of the cross sections are obtained to be (14.5 ± 0.5) × 10^-17 cm² for C₂⁺_2^+, (12.1 ± 0.1) × 10^-17 cm² for CD⁺, (27.7 ± 0.2) × 10^-17 cm² for C⁺ and (11.1 ± 0.8) × 10^-17 cm² for D⁺. The smallest cross section is measured to be (1.50 ± 0.04) × 10^-18 cm² for the production of the doubly charged ion C²⁺. Individual contributions for dissociative excitation and dissociative ionization are determined for each singly-charged product. The cross sections are presented in closed analytic forms convenient for implementation in plasma simulation codes. Kinetic energy release distributions of dissociation fragments are seen to extend from 0 to 6 eV for the heaviest fragment C₂⁺_2^+, up to 11.0 eV for CD⁺, 14.2 eV for C⁺ and 11.2 eV for D⁺ products.     

Investigating <Superscript>64</Superscript>Zn<Superscript>+</Superscript> ion-doped silicon under conditions of hot implantation

The results from visualizing the structure and identifying the composition of surface and the nearsurface layers of CZ n-Si (100) implanted by ⁶⁴Zn⁺ ions with dose of 5 × 10¹⁶ cm^–2 and energy of 50 keV under conditions of a substrate heated to 350°C are presented. It is found that there is no Si amorphization after Zn implantation, and only one layer 200 nm thick forms and is damaged because of radiation-induced defects. Zn nanoparticles 10–100 nm in size are found on a sample’s surface and in its near-surface layer. Computer analysis and mapping of the elemental and phase composition of FIB crater walls and the surface show that the main elements (54%) in the sample near-surface layer are Si, O, and Zn. The presence of ZnO phase is recorded to a depth of 20 nm in the sample.     

Double-beta decay of <Superscript>150</Superscript>Nd to the first 0<Superscript>+</Superscript> excited state of <Superscript>150</Superscript>Sm

Two-neutrino-double-beta decay of ¹⁵⁰Nd to the first 0⁺ excited state in ¹⁵⁰Sm is investigated with a 400-cm³ low-background HPGe detector. Data analysis for 11320.5 h shows an excess of events at 333.9 and 406.5 keV. This allows us to estimate the half-life of the investigated process as [1.4 _?0.2 ^+0.4 ±0.3(syst.)]×10²⁰ yr.     

Double-beta decay of <Superscript>150</Superscript>Nd to the first 0<Superscript>+</Superscript> excited state of <Superscript>150</Superscript> Sm: Current state

Two-neutrino double-beta decay of ¹⁵⁰Nd to the first 0⁺ excited state in ¹⁵⁰Sm is investigated with the 400-cm³ low-background HPGe detector. Preliminary data analysis for 6843 h shows an excess of events at 333.9 and 406.5 keV. If this excess is assigned to the investigated transition, then its half-life can be estimated at [1.2 _?0.3 ^+0.5 ±0.4(syst.)]×10²⁰ yr.     

Kinetics of Rb<Stack><Subscript>2</Subscript><Superscript>+</Superscript></Stack> and Rb<Superscript>+</Superscript> formation in laser-excited rubidium vapor

We have studied the formation of the molecular ion Rb₂⁺ and the atomic ion Rb⁺. These are created in laser excited rubidium vapor at the first resonance, 5s–5p and 5p-nl transitions. A theoretical model is applied to this interaction to explain the time evolution and the laser-power dependence of the population density of Rb⁺ and Rb₂⁺. A set of rate equations which describe: the temporal variation of the population density of the excited states; the atomic ion density; and the electron density, were solved numerically under the experimental conditions of Barbier and Cheret. In their experiment the Rb concentration was 1×10¹³cm⁻³ and the laser power was taken to be 50–500 mW at vapor temperature = 450 K. The results showed that the main processes for producing Rb₂⁺ are associative ionization and Hornbeck-Molnar ionization. The calculations have also showed that, the atomic ions Rb⁺ are formed through the Penning Ionization (PI) and photoionization processes. Moreover, a reasonable agreement between the experimental results and our calculations for the ion currents of the Rb⁺ and Rb₂⁺ is obtained.      

Double-beta decay of <Superscript>100</Superscript>Mo to 0<Superscript>+</Superscript> excited states in <Superscript>100</Superscript>Ru

A brief review on the 2νββ decay of ¹⁰⁰Mo to the 0⁺ excited state in ¹⁰⁰Ru is performed. A weighted-average half-life value for the decay has been obtained, T_1/2 = (6.8 ± 1.2) × 10²⁰ yr. The corresponding average value for the nuclear matrix element was extracted, 0.095 ± 0.009.     

Cluster ion emission from LiF induced by MeV N<Superscript>q+</Superscript> projectiles and <Superscript>252</Superscript>Cf fission fragments

Ion cluster desorption yields from LiF were measured at PUC-Rio with ≈0.1 MeV/u N ^q+ (q = 2,4,5,6) ion beams by means of a time-of-fight (TOF) mass spectrometer. A ²⁵²Cf source mounted in the irradiation chamber allows immediate comparison of cluster emissions induced by ≈65 MeV fission fragments (FF). Emission of (LiF) _n Li⁺ clusters are observed for both the N beams and the ²⁵²Cf fission fragments. The observed cluster size n varies from 1 to 6 for N ^q+ projectiles and from 1 to ≈40 for the ²⁵²Cf-FF. The size dependence of the Y(n) distributions suggests two cluster formation regimes: (i) recombination process in the outgoing gas phase after impact and (ii) emission of pre-formed clusters from the periphery of the impact site. The corresponding distribution of ejected negative cluster ions (LiF) _n F⁻ closely resembles that of the positive secondary (LiF) _n Li⁺ ions. The desorption yields of positive ions scale as Y(n) ∼ q ⁵. A calculation with the CASP code shows that this corresponds to a cubic scaling ∼S _e ³ with the electronic stopping power S _e , as predicted by collective shock wave models for sputtering and models involving multiple excitons (Frenkel pair sputtering). We discuss possible interpretations of the functional dependence of the evolution of the cluster emission yield Y(n) with cluster size n, fitted by a number of statistical distributions.