A transparent boron-nitrogen thin film formed by plasma CVD out of the discharge region

A transparent boron-nitrogen thin film of thickness 550 nm was successfully deposited out of the discharge region by rf plasma CVD. The deposition was performed with diborane (4.8 vol % in N₂) as the reactant gas and argon as the carrier gas by an inductively coupled reactor at a frequency of 13.56 MHz. The transparent films could be obtained at a low pressure of about 30 Pa, at a discharge power level of 30 W, and at room temperature without heating the substrate. The thin films obtained by rf plasma are compared with those obtained by microwave plasma. Both the refractive index and the deposition rate for the films deposited by microwave plasma are discussed according to the deposition conditions.     

Use of Neural Network to Control a Refractive Index of SiN Film Deposited by Plasma Enhanced Chemical Vapor Deposition

Refractive index of silicon nitride film deposited in a plasma enhanced chemical deposition system is modeled by using neural network. The deposition process was characterized with a full factorial experiment. Additional 12 experiments were conducted to test model appropriateness. Predicted model behaviors were in good agreement with actual measurements. Deposition mechanisms were qualitatively examined especially with respect to the pressure. Possible interactions between the pressure and other factors (SiH₄, NH₃, radio frequency (RF) power, and substrate temperature) were examined on the basis of SiH/NH bond ratio. The refractive index increased with increasing either SiH₄ flow rate or RF power. In contrast, the refractive index decreased with increasing NH₃ flow rate. Little interactions between the pressure and RF power were observed. Pressure effect on the refractive index was quite different depending on the level of SiH₄ flow rate or substrate temperature. In general, increasing the pressure increased the refractive index. Meanwhile, the refractive index was insensitive to parameter variations at relatively high pressures. The most complex interaction occurred as the pressure interacted with the temperature. Useful clues to control the refractive index were revealed from the predictive model.     

Effects of cyclonic plasma deposited organosilicon nano-coating on 316 stainless steel and its surface characterization

Cyclonic atmospheric pressure plasma is developed to synthesize the organosilicon nano-coating on 316 L stainless steel surface with hexamethyldisilazane (HMDSN) and HMDSN/N₂ monomers. The modified 316 L stainless steel surface characteristics of cyclonic plasma deposited organosilicon nano-coating were evaluated by the static contact angle measurement, FTIR, SEM, AFM, and XPS detections. The chemical analysis with FTIR and XPS depicts that cyclonic plasma deposited nano-coating obtains the relatively inorganic characteristics. The surface morphological determination with SEM and AFM refers cyclonic plasma deposited 316 L stainless steel surface roughness alteration with switching monomer inputs. This study shows the potential of chamber-less deposition to create the plasma deposited organosilicon nano-coating for 316 L stainless.     

DC plasma polymerization of hexamethyldisiloxane

Hexamethyldisiloxane (HMDS) was polymerized onto metallic and insulating substrates in a parallel-plate DC reactor. The limits of the DC reactor with respect to pressure and power were determined for deposition of PP-HMDS films. In all conditions ranging from 5 Pa/0.3 W to 100 Pa/50 W, solid films were deposited. No powders or oily films were obtained under any condition in this operating range. The films were polymeric in nature,i.e., they were neither carbon-like nor SiO _x -like films. The structures and crosslink densities of the plasma films dependend strongly on the deposition conditions. The highest deposition rates, up to 2 μm per minute (or0.3 mg/cm² min), were obtained at high power, pressure, and flow rate conditions. An efficiency ɛ is introduced, defined as the fraction of the monomer that is retained in the form of a polymer deposited on the substrate. Efficiencies as high as 25% could be obtained in certain conditions. Pulsing the discharge power increased the conversion efficiency markedly, but the effect depended strongly on the monomer used. In addition to HMDS, plasma polymers were also deposited from pyrrole in pulsed conditions for comparison. A method is described for depositing films on insulators from a DC glow discharge using two wire meshes held at a negative potential.     

Spectroellipsometric Characterization of Multilayer Sol-Gel Fe2O3 Films

Multilayer Fe₂O₃ films were deposited by the sol-gel method on glass substrates using three successive deposition procedures. The films were thermally treated for 1 h at 300°C.The optical and microstructural properties of these films were investigated by spectroscopic ellipsometry (SE) in the 500–1000 nm range. The optical gap was found by fitting the dispersion of the film refractive index (n) with the Wemple-DiDomenico (WDD) formula.The ellipsometric measurements showed also that the Fe₂O₃ films are anisotropic. The birefringence values (n) of the sol-gel films (0.05–0.08) are smaller than the large values of the Fe₂O₃ (which are around 0.28) but increase with the crystalization of the films. AFM mesurements showed that the films treated at 300°C start to crystallize.     

Plasma deposition of silicon nitride-like thin films from organosilicon precursors

Plasmas containing hexamethyldisilazane or hexamethylcyclotrisilazane and nitrogen or ammonia were used to deposit silicon nitride-like films at low substrate temperature (T<60°C). Optical properties (refractive index and absorption coefficient), chemical composition of the deposit and film growth rate were examined with respect to the deposition parameters (rf power, pressure and feed composition). As deposited films from ammonia containing mixtures were silicon nitride-like, contained carbon, and were nearly oxygen free. Furthermore, only Si−N, Si−H, and N−H bonds were identified in as-deposited films. The reactive Si−H bonds progressively transformed into Si−O bonds as the films were exposed to air. Films deposited from highly ammonia-diluted mixtures, high RF power and low pressure showed the highest stability with refractive indices as high as 1.8.     

Surface characterization of the SiOx films prepared by a remote atmospheric pressure plasma jet

The deposition rate and surface properties of SiO_x films were prepared and investigated using remote atmospheric pressure plasma (APP) jet. The APP, generated with low frequency power at 16 kHz, was fed with tetraethoxysilane (TEOS)/air gas mixture. After deposition, the SiO_x films were analyzed for chemical characteristics, elemental composition, surface morphology, and hardness. It was found that the deposition substrate temperature is the key factor to affect the deposition rate of remote APP chemical vapor deposition process. Fourier transform infrared (FTIR) spectra indicated that APP deposited SiO_x films are an inorganic feature. XPS examination revealed that the SiO_x films contained approximately 30% silicon, 58% oxygen and 12% carbon. Atomic forced microscopy (AFM) analysis results indicated a smooth surface of SiO_x films in deposition under higher substrate temperature. Also, pencil hardness tests indicated that the hardness of APP deposited SiO_x films was greatly improved with increasing substrate temperatures. Copyright © 2008 John Wiley & Sons, Ltd.     

Glow discharge deposition of silicon dioxide and aluminum oxide films: A kinetic model of the surface processes

Silicon oxide films have been deposited in a RF discharge plasma using hexamethyl-disiloxane (HMDSO) and Ar/O₂ or N₂O. Also, aluminum oxide layers have been deposited using trimethylaluminum (TMA) and N₂O or CO₂. The influence of the nature and the proportion q( the oxidizing gases and file suhstrate temperature effect have been studied. As far as the films obtained with HMDSO and TMA tire concerned, the most important experimental finding is the decrease of the deposition rate with increasing substrate temperature. FTIR, ESCA, and refractive index measurements show that the decrease of the deposition rate correlates with a nearly stoichiometric film. Low negative apparent activation energies are deduced from Arrhenius plots and are representative of deposition rates controlled hr fire adsorption of radical and surface di fusivities. A kinetic rnodel shows that the rate-limiting step is the adsorption of HMDSO or TMA radicals at low temperatures while for temperatures above 250°C the oxidation reactions control the deposition rate.     

Silicon Oxide Coatings with Very High Rates (>10?nm/s) by Hexamethyldisiloxane-Oxygen Fed Atmospheric-Pressure VHF Plasma: Film-Forming Behavior Using Cylindrical Rotary Electrode

Silicon oxide films are deposited in atmospheric-pressure (AP) He/O₂/HMDSO plasma excited by a 150?MHz VHF power using a cylindrical rotary electrode. The atomic bonding configurations and deposition rate are studied by controlling the O₂ concentration (O₂/HMDSO source ratio) and VHF power density, the other parameters being maintained constant. Under the addition of 0.03?% O₂ to the process gas mixture (O₂/HMDSO????0.09), AP-VHF plasma greatly enhances the fragmentation and oxidation of HMDSO, so that an almost inorganic film is obtained at a very high deposition rate of 33?nm?s^?1. A silicon oxide coating on a polycarbonate pane is demonstrated with no significant thermal deformation of the pane, showing that AP-VHF plasma would be an efficient coating tool for polymer substrates.     

Magnetically Enhanced 15 kHz Glow Discharge of Methane

This work deals with the luminous chemical vapour deposition (plasma polymerization) of hydrocarbon polymeric thin films in a magnetic field enhanced discharge of methane. The films were deposited on 4″ <111> single crystal silicon substrates. We investigated the influence of the different glow discharge parameters (e.g. pressure, flow rate, power input, etc.) on the deposition rate of methane and the refractive index of the resulting polymeric films, as well as the distribution of these parameters across the wafer. We used a Shinko Seiki Plasma Polymerization equipment with a bell jar reactor comprising two electrodes connected to a symmetric AC power supply of 15 kHz. Two magnetrons were formed by placing two circular shaped concentric magnetic poles behind each electrode. The substrates were attached on both sides of a rotating wheel held at a floating potential in the middle of the two electrodes. This equipment allowed us to vary a single parameter and keep the other parameters constant over the whole process. We measured the thickness and the refractive index and their distribution over the wafer. The effect of the system pressure, decoupled from the effect of flow rate, is explained by the characteristic nature of luminous gas phase and by the polymerization/deposition mechanism of luminous chemical vapour deposition.     

Structural and Optical Properties of Sol-Gel Deposited Proton Conducting Ta2O5 Films

Proton conducting tantalum oxide films were deposited on ITO (Indium Tin Oxide) coated glass, fused silica and soda-lime glass substrates by spin coating using a sol-gel process. The coating solutions were prepared using Ta(OC₂H₅)₅ as a precursor. X-ray diffraction studies determined that the sol-gel films, heat treated at temperatures below 400°C, were amorphous. Films heat treated at higher temperatures were crystalline with the hexagonal δ-Ta₂O₅ structure. The solar transmission values (T _s ) of tantala films on glass generally range from 0.8–0.9, depending on thickness. The refractive index and the extinction coefficient were evaluated from transmittance characteristics in the UV-VIS-NIR regions. The refractive index values calculated at λ=550 nm increased fromn=1.78 to 1.97 with increasing heat treatment from 150 to 450°C. The films heat treated at different temperatures showed low absorption, with extinction coefficients of smaller thank=1×10⁻³ in the visible range. Impedance spectroscopic investigations performed on Ta₂O₅ films revealed that these films have a protonic conductivity of 3.2×10⁻⁴S/m. The films are suitable for proton conducting layers in electrochromic (EC) devices.     

Influence of the Plasma Chemistry on the Composition of ZrOx and NbOx Thin Films Deposited by Reactive Magnetron Sputtering

The plasma chemistry of magnetron sputtered Zr and Nb in an Ar/O₂ atmosphere has been measured as a function of the O₂ partial pressure. The previously reported composition of films deposited onto grounded non-intentionally heated substrates was correlated with the dominant positive and negative ion populations in the plasma. While the oxygen deficient films were grown in the Ar⁺ dominant mode, the close-to-stoichiometric films were grown in the O⁺/O⁻ dominant mode. The formation of close-to-stoichiometric ZrO_2.1 is observed in the compound mode (CM), while the formation of close-to-stoichiometric Nb₂O_4.7 thin films was reported in addition to the CM also in the transition mode (TM). This may be understood based on the 1.5–1.9 times higher power dissipated in the Nb–Ar–O₂ plasma as compared to the Zr–Ar–O₂ plasma. We suggest that at larger power O₂ dissociation may be more efficient and lead to the presence of sufficient atomic oxygen to fully oxidize the films. This finding may provide a pathway towards a deposition rate enhancement, since compound formation at the substrate is enabled in the TM of the higher power Nb–Ar–O₂ plasma and not only in the CM, as in the case of the lower power Zr–Ar–O₂ plasma.     

Deposition of polysiloxane‐like nanofilms onto an aluminium alloy by plasma polymerized hexamethyldisiloxane: characterization by XPS and contact angle measurements

In this work, aluminium (Alclad 2024‐T3) substrates were cleaned by an r.f. (13.56 MHz) plasma, using argon (Ar), oxygen (O₂) and a mixture of O₂/Ar (50:50) gases. The effectiveness of plasma cleaning was checked in situ using X‐ray photoelectron spectroscopy (XPS) and ex situ using water contact angle measurements. XPS O/Al surface atomic ratios are in excellent agreement with those of the crystalline boehmite and the pseudoboehmite. Oxygen O 1s peak‐fitting was used to quantify the proportion of hydroxyl ions and the functional composition on the aluminium surface: the surface cleaned with O₂ plasma contains 50% of aluminium hydroxides, the ones cleaned with Ar plasma and with Ar/O₂ plasma contain, respectively, 25 and 37% hydroxyl ions. The binding energy separation between Al 2p and O 1s is characteristic of AlO(OH). Thin SiO_x films were subsequently deposited from a mixture of hexamethyldisiloxane (HMDSO) and oxygen. In the absence of oxygen, a hydrophobic (Θ≥ 100° ) film characteristic of polydimethylsiloxane (PDMS) is formed: polysiloxane‐like thinner films (SiO_x) are obtained with the introduction of oxygen. XPS and contact angle measurements confirmed both the composition and the structure of these films. More importantly, contact angle measurements using different liquids and interpreted with the van Oss‐Good‐Chaudhury theory allowed determination of the surface free energy of the deposited films: the calculated values of surface tension of the film formed from HMDSO/O₂: (50/50) are in excellent agreement with those of reference silica‐based materials such as a silicon wafer and cleaned glass. Copyright © 2007 John Wiley & Sons, Ltd.     

室温下制备以{211}晶面为主的Ti1-xVxO2薄膜及其可见光催化性能

以金属Ti和V作为靶材,采用直流反应共溅射技术在室温下制备了以{211}晶面为主的锐钛矿相Ti_1-xV_xO₂薄膜,研究了不同V靶功率对Ti_1-xV_xO₂薄膜的薄膜成分、晶相结构和可见光催化性能的影响。研究表明,Ti_1-xV_xO₂薄膜的晶相结构为锐钛矿相,择优取向为(211),而结晶度受V靶功率的影响。随着V靶功率的增加,薄膜中V元素含量逐渐增加,同时,晶粒和沉积速率也逐渐增加。另外,当V靶功率为150W时,薄膜的表面粗糙度值有一个最大值。V的掺杂导致薄膜的能带间隙变窄,对光的吸收向可见光区偏移,从而有效地改善了薄膜的可见光催化能力。当V靶功率为150W时,Ti_1-xV_xO₂薄膜的能带间隙值为2.82eV,其在2h的可见光照射下分解了80%的RhB染料。这被归结于能带间隙窄,高能晶面{211}和结晶度高的共同作用。     

室温下制备以{211}晶面为主的Ti1-xVxO2薄膜及其可见光催化性能

以金属Ti和V作为靶材,采用直流反应共溅射技术在室温下制备了以{211}晶面为主的锐钛矿相Ti_1-xV_xO₂薄膜,研究了不同V靶功率对Ti_1-xV_xO₂薄膜的薄膜成分、晶相结构和可见光催化性能的影响。研究表明,Ti_1-xV_xO₂薄膜的晶相结构为锐钛矿相,择优取向为(211),而结晶度受V靶功率的影响。随着V靶功率的增加,薄膜中V元素含量逐渐增加,同时,晶粒和沉积速率也逐渐增加。另外,当V靶功率为150 W时,薄膜的表面粗糙度值有一个最大值。V的掺杂导致薄膜的能带间隙变窄,对光的吸收向可见光区偏移,从而有效地改善了薄膜的可见光催化能力。当V靶功率为150 W时,Ti_1-xV_xO₂薄膜的能带间隙值为 2.82 eV,其在2 h的可见光照射下分解了80%的RhB染料。这被归结于能带间隙窄,高能晶面{211}和结晶度高的共同作用。     

Optical emission spectroscopy as a real time diagnostic tool for plasma-assisted deposition of TiN

Real-time optical emission spectroscopy (OES) was used to monitor the deposition of TiN both from mixtures of tetrakis(dimethylamino)titanium (TDMATi)-N₂ and TiCl₄-H₂-N₂ in an electron cyclotron resonance chemical vapor deposition system. The accurate control of the ratio of the emission intensities of ionized nitrogen at 391.4 nm and molecular nitrogen at 357.7 nm (N ₂ ⁺ /N₂) led to low temperature deposition of stoichiometric TiN (Ti/N ≈ 1) and very low resistivity in both cases. It was found that high ion density plasmas are crucial for a considerable reduction of the deposition temperature while maintaining good film quality. OES shows that the abundance of certain excited plasma species is not only dependent on the gas mixture and the deposition parameters, such as total pressure and microwave power, but also is strongly affected by the magnetic field configuration. The deposition rate and the film resistivity can be related to the emission intensity ratio, I(N ₂ ⁺ )/I(N₂). Finally, the two processes are compared in terms of the quality of as-deposited and heat-treated films. The comparison shows that the films obtained with TDMATi exhibit lower resistivity and are thermally more stable than with TiCl₄.     

Structural,optical and secondary electron emission properties of diamond like carbon thin films deposited by pulsed-DC plasma CVD technique

Plasma enhanced chemical vapor deposition (PECVD) technique using pulsed-DC power supply was used to fabricate diamond like carbon (DLC) films at deposition rates as high as 110 nm/min. The DLC films deposited by pulsed-DC and DC based power supplies under different gas flow ratios were studied for their suitability as dielectric layer coatings in plasma display panels (PDPs). The effect of deposition parameters on the properties of the DLC films were studied using Fourier transform infra-red spectroscopy (FTIR) and spectroscopic ellipsometry (SE). FTIR reveals that higher hydrogen dilution in gas mixture leads to higher sp³ content. SE studies in wide spectral range were analyzed using Tauc-Lorentz model dielectric function. A rise in the extracted refractive index was seen on increasing the H₂ content in the feed gas, thus resulting in optically denser films. Secondary electron emission coefficient (γ) was measured in the films deposited by the DC and pulsed-DC based PECVD. Firing voltage in the DLC samples was found to have very low variation in the operating pressure range used in commercial PDPs, suggesting possibility of enhanced long term reliability of DLC coatings in future PDP applications.     

Atomic Hydrogen Induced Chemical Vapor Deposition of Silicon Oxycarbide Thin Films Derived from Diethoxymethylsilane Precursor

Amorphous silicon oxycarbide (a-SiOC:H) films produced by remote plasma RPCVD from diethoxymethylsilane (DEMS) were characterized in terms of their basic properties related to the coatings deposited using conventional plasma enhanced PECVD method. The effect of substrate temperature (T_S) on the growth rate, chemical composition, structure, and properties of resulting a-SiOC:H films is reported. Film growth is an adsorption-controlled process, wherein two mechanisms can be distinguished with a transition at about T_S=70°C. Depending on the temperature, films of different nature can be obtained, from polymer-like to highly crosslinked material with C-Si-O network. The chemical structure of a-SiOC:H films was characterized by FTIR, ¹³C and ²⁹Si solid-state NMR, and X-ray photoelectron spectroscopes. The a-SiOC:H films were also characterized in terms of their density, refractive index, surface morphology, conformality of coverage, hardness, adhesion to a substrate, and friction coefficient. The films were found to be morphologically homogeneous materials exhibiting good conformality of coverage and small surface roughness. Their refractive index exhibits anomalous effect revealing a minimum value at T_S=125°C. Due to their exceptional physical properties a-SiOC:H films produced by RPCVD from DEMS precursor seems to be useful as potential dielectric materials or coatings for various encapsulation applications.     

Deposition of Diamondlike Carbon Film and Mass Spectrometry Measurement in CH4/N2 RF Plasma

The deposition of diamondlike carbon (DLC) film and the measurements of ionic species by means of mass spectrometry were carried out in a CH₄/N₂ RF (13.56 MHz) plasma at 0.1 Torr. The film deposition rate greatly depended on both CH₄/N₂ composition ratio and RF power input. It was decreased monotonically as CH₄ content decreased in the plasma and then rapidly diminished to negligible amounts at a critical CH₄ content, which became large for higher RF power. The rate increased with increasing RF power, reaching a maximum value in 40% CH₄ plasma. The predominant ionic products in CH₄/N₂ plasma were NH⁺ ₄ and CH₄N⁺ ions, which were produced by reactions of hydrocarbon ions, such as CH⁺ ₃, CH⁺ ₂, CH⁺ ₅, and C₂H⁺ ₅ with NH₃ molecules in the plasma. It was speculated that the production of NH⁺ ₄ ion induced the decrease of C₂H⁺ ₅ ion density in the plasma, which caused a reduction in higher hydrocarbon ions densities and, accordingly, in film deposition rate. The N⁺ ₂ ion sputtering also plays a major role in a reduction of film deposition rate for relatively large RF powers. The incorporation of nitrogen atoms into the bonding network of the DLC film deposited was greatly suppressed at present gas pressure conditions.     

Thin Films Deposition from Hexamethyldisiloxane and Hexamethyldisilazane under Dielectric-Barrier Discharge (DBD) Conditions

Hexamethyldisiloxane (HMDSO) and hexamethyldisilazane (HMDSN) were used as organosilicon reagents for PE-CVD of thin films under filamentary barrier-discharge conditions at atmospheric pressure. Efficient discharges were obtained in the region of moderate frequencies (5 kHz). The following mixtures of organosilicon reagents with carrier gas and oxidants or ammonia were investigated: HMDSO+Ar, HMDSO+N₂, HMDSO+O₂+Ar, HMDSO+N₂O+Ar, and HMDSN+NH₃+N₂. Under such conditions HMDSO was converted to produce thin films (10–1000 nm) of silicon oxide, generally containing admixtures of residual organic content (Si—CH_n and Si—H groups). The films deposited from HMDSN+NH₃+N₂ contained silicon, nitrogen and oxygen.